Self-assembly and spectroscopic fingerprints of photoactive pyrenyl tectons on hBN/Cu(111)

• Domenik M. Zimmermann,
• Knud Seufert,
• Luka Ðorđević,
• Tobias Hoh,
• Sushobhan Joshi,
• Tomas Marangoni,
• Davide Bonifazi and
• Willi Auwärter

Beilstein J. Nanotechnol. 2020, 11, 1470–1483, doi:10.3762/bjnano.11.130

• revealed weak molecule–support interactions. The STM data showed an electronic patterning of the pyrene films with periodicities in the single digit nanometer range. Furthermore, we provide a first case study for the self-assembly of advanced porous structures on hBN monolayers, introducing a chiral kagome

Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir

• Mathias Franz,
• Romy Junghans,
• Paul Schmitt,
• Adriana Szeghalmi and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2020, 11, 1439–1449, doi:10.3762/bjnano.11.128

• nanoparticles were used to locally etch the silicon substrate. This work demonstrates a bottom-up self-assembly approach for noble metal nanoparticle formation and the subsequent silicon wet etching. The macroscopic wafer patterning has been done by using a poly(methyl methacrylate) masking layer. Different

• nanoparticles and a poly(methyl methacrylate) (PMMA) patterning were etched in a diluted HF/H2O2 solution for 10 min. The process was a single-wafer bath process and can be scaled up to a batch process easily. As a reference, one wafer with gold nanoparticles was etched in a HF solution (1.73 mol/L) without the

Atomic defect classification of the H–Si(100) surface through multi-mode scanning probe microscopy

• Jeremiah Croshaw,
• Thomas Dienel,
• Taleana Huff and
• Robert Wolkow

Beilstein J. Nanotechnol. 2020, 11, 1346–1360, doi:10.3762/bjnano.11.119

• formed reducing the area available for patterning. By probing the surface using the different interactivity afforded by either hydrogen- or silicon-terminated tips, we are able to extract new insights regarding the atomic and electronic structure of these defects. This allows for the confirmation of

• for the patterning and operation of atom scale devices including qubits [2][3] and single electron transistors [4][5] made from atomically precise implanted donor atoms near the H–Si surface, and logic structures using fabricated silicon dangling bonds [6][7][8]. In many cases the structures

An atomic force microscope integrated with a helium ion microscope for correlative nanoscale characterization

• Santiago H. Andany,
• Gregor Hlawacek,
• Stefan Hummel,
• Charlène Brillard,
• Mustafa Kangül and
• Georg E. Fantner

Beilstein J. Nanotechnol. 2020, 11, 1272–1279, doi:10.3762/bjnano.11.111

• sensitivities to helium ion irradiation than to electron irradiation in terms of charge per area [14]. Patterning resolution down to 4 nm has been demonstrated on HSQ resist [15], surpassing electron beam lithography, which greatly suffers from the proximity effect. In a combined AFM–HIM setup, the AFM could be

3D superconducting hollow nanowires with tailored diameters grown by focused He⁺ beam direct writing

• Rosa Córdoba,
• Alfonso Ibarra,
• Dominique Mailly,
• Isabel Guillamón,
• Hermann Suderow and
• José María De Teresa

Beilstein J. Nanotechnol. 2020, 11, 1198–1206, doi:10.3762/bjnano.11.104

• -50009 Zaragoza, Spain Departamento de Física de la Materia Condensada, Universidad de Zaragoza, E-50009 Zaragoza, Spain 10.3762/bjnano.11.104 Abstract Currently, the patterning of innovative three-dimensional (3D) nano-objects is required for the development of future advanced electronic components

Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

• Elena I. Monaico,
• Eduard V. Monaico,
• Veaceslav V. Ursaki,
• Shashank Honnali,
• Vitalie Postolache,
• Karin Leistner,
• Kornelius Nielsch and
• Ion M. Tiginyanu

Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81

• requiring the use of photolithography with colloidal crystal templating in the first pre-etching step. Fabrication of GaAs nanopillars by metal-assisted chemical etching (MacEtch) also requires lithographic methods for catalytic metal patterning [25][26]. Among non-lithographic methods based on

A novel dry-blending method to reduce the coefficient of thermal expansion of polymer templates for OTFT electrodes

• Xiangdong Ye,
• Bo Tian,
• Yuxuan Guo,
• Fan Fan and
• Anjiang Cai

Beilstein J. Nanotechnol. 2020, 11, 671–677, doi:10.3762/bjnano.11.53

• Telecommunications, Xi’an 710121, China 10.3762/bjnano.11.53 Abstract Among the patterning technologies for organic thin-film transistors (OTFTs), the fabrication of OTFT electrodes using polymer templates has attracted much attention. However, deviations in the electrode alignment occur because the coefficient of

Molecular architectonics of DNA for functional nanoarchitectures

• Debasis Ghosh,
• Lakshmi P. Datta and
• Thimmaiah Govindaraju

Beilstein J. Nanotechnol. 2020, 11, 124–140, doi:10.3762/bjnano.11.11

Evaluation of click chemistry microarrays for immunosensing of alpha-fetoprotein (AFP)

• Seyed Mohammad Mahdi Dadfar,
• Sylwia Sekula-Neuner,
• Vanessa Trouillet,
• Hui-Yu Liu,
• Ravi Kumar,
• Annie K. Powell and
• Michael Hirtz

Beilstein J. Nanotechnol. 2019, 10, 2505–2515, doi:10.3762/bjnano.10.241

• antibody and antigen, fluorescently labeled AFP ink was spotted onto the antibody-terminated surfaces by µCS within 15 × 15 spot arrays. The spotting process was performed on a nanolithography platform (NLP 2000 system, NanoInk, USA) utilizing surface patterning tool cantilevers (SPT-S-C10S, Bioforce

Integration of sharp silicon nitride tips into high-speed SU8 cantilevers in a batch fabrication process

• Nahid Hosseini,
• Matthias Neuenschwander,
• Oliver Peric,
• Santiago H. Andany,
• Jonathan D. Adams and
• Georg E. Fantner

Beilstein J. Nanotechnol. 2019, 10, 2357–2363, doi:10.3762/bjnano.10.226

• during photolithography of the cantilever patterning. Light travels through the SU8 polymer and reaches the bottom surface (LSNT) and is then reflected back to the parts of the non-exposed SU8. Except for its unusual shape, it does not bring any prominent problem in general AFM uses unless the cross is

Precise local control of liquid crystal pretilt on polymer layers by focused ion beam nanopatterning

• Maxim V. Gorkunov,
• Irina V. Kasyanova,
• Vladimir V. Artemov,
• Alena V. Mamonova and
• Serguei P. Palto

Beilstein J. Nanotechnol. 2019, 10, 1691–1697, doi:10.3762/bjnano.10.164

• techniques such as patterning with nanogrooves [13][14][15] and nanoslits [16], ion-beam irradiation of specific inorganic [17] and polymer [18] substrates, subjecting of photo-controlled aligning polymers to near-threshold doses of ultraviolet radiation [19], formation of surface microdomains from

• anchoring conditions from planar to vertical upon certain surface areas is performed using a FEI Scios dual-beam electron microscope operating with a FIB of Ga+ ions of a current of 0.1 nA accelerated by a voltage of 30 kV. The FIB patterning is controlled by digital templates, which prescribe the beam path

Materials nanoarchitectonics at two-dimensional liquid interfaces

• Katsuhiko Ariga,
• Michio Matsumoto,
• Taizo Mori and
• Lok Kumar Shrestha

Beilstein J. Nanotechnol. 2019, 10, 1559–1587, doi:10.3762/bjnano.10.153

• well as two-dimensional molecular patterning, are briefly explained. In the following sections, several topics of materials nanoarchitectonics at liquid interfaces such as the preparation of two-dimensional metal-organic frameworks (MOFs) and covalent organic frameworks (COFs), the fabrication of multi

• . 2.2 Two-dimensional molecular patterning and production of low-dimensional materials Enhanced molecular interaction and two-dimensionally confined motion at liquid interfaces are advantageous for the fabrication of two-dimensional patterned structures with high structural precision [192][193]. In the

• -assemblies at the air–water interface yielding a monolayer that was successively transferred onto solid surfaces via the contacting method (Figure 6) [202]. Unlike two-dimensional molecular patterning though molecular recognition, which has been described in the previous parts, a rather ambiguous interaction

Fabrication of phase masks from amorphous carbon thin films for electron-beam shaping

• Lukas Grünewald,
• Dagmar Gerthsen and
• Simon Hettler

Beilstein J. Nanotechnol. 2019, 10, 1290–1302, doi:10.3762/bjnano.10.128

• × 2048 pixels and a dwell time of 50 ns was used which results in a dose of around 0.2 ions/nm2. Phase-mask patterning In the case of BBs the required thickness profile (Equation 3) was milled with custom FIB routines. These are realized in the form of text files in which the spatial coordinates for the

Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2019, 10, 1125–1130, doi:10.3762/bjnano.10.112

• TFT devices comprise several functional layers and their respective contact interfaces. Generally, the individual layer fabrication process follows a number of thin film deposition and photolithographic patterning steps. During the film growth through plasma-enhanced chemical vapor deposition or

• sputtering techniques, the sample suffers from the plasma bombardment in the chamber. In addition, the deposited films are inevitably irradiated by UV light in the process of patterning, inducing the increase in the concentration of oxygen-related defects, which further degrade the initial electrical

Ceria/polymer nanocontainers for high-performance encapsulation of fluorophores

• Kartheek Katta,
• Dmitry Busko,
• Yuri Avlasevich,
• Katharina Landfester,
• Stanislav Baluschev and
• Rafael Muñoz-Espí

Beilstein J. Nanotechnol. 2019, 10, 522–530, doi:10.3762/bjnano.10.53

• nanocapsules [26][27]. TDI, which than can be excited with red light (λexc = 633 nm from a HeNe laser, for instance) and shows bright fluorescence at λmax = 670–690 nm, is a suitable organic dye for patterning or imaging of biomaterials. This dye belongs to the rylene family [28], which is formed by extending

Advanced scanning probe lithography using anatase-to-rutile transition to create localized TiO₂ nanorods

• Julian Kalb,
• Vanessa Knittel and
• Lukas Schmidt-Mende

Beilstein J. Nanotechnol. 2019, 10, 412–418, doi:10.3762/bjnano.10.40

• report shows the proof of principle of this technique, and there are certainly many features that have to be improved for commercial applications. A need for improvement is required with respect to the rapid ageing of expensive probes, non-linearities of the scanned field, and patterning of large areas

Site-specific growth of oriented ZnO nanocrystal arrays

• Rekha Bai,
• Dinesh K. Pandya,
• Sujeet Chaudhary,
• Veer Dhaka,
• Vladislav Khayrudinov,
• Jori Lemettinen,
• Christoffer Kauppinen and
• Harri Lipsanen

Beilstein J. Nanotechnol. 2019, 10, 274–280, doi:10.3762/bjnano.10.26

• grow ZnO nanocrystals on both bare and on an array of pores patterned on the polymer-coated indium-doped tin oxide (ITO) conducting substrates. The patterning process for the polymer, poly(Disperse Red 1 acrylate), involves laser interference lithography and oxygen plasma etching and has been reported

• them with their c-axis normal to the substrate. Moreover, the length and width of crystals are same as observed in the SB sample. Thus, we can say that the periodic array of c-axis-oriented twinned NCs at predetermined sites can be grown by patterning the polymer-coated ITO substrate. We also tried to

• the unhindered growth of ZnO NCs identical to that of the SB case, except only on the specific sites on the ITO surfaces exposed by patterning that are available for the heterogeneous nucleation. As the size of the pore was equal to the width of ZnO NCs grown on bare ITO, the lateral growth on the

Characterization and influence of hydroxyapatite nanopowders on living cells

• Przemyslaw Oberbek,
• Tomasz Bolek,
• Adrian Chlanda,
• Seishiro Hirano,
• Sylwia Kusnieruk,
• Julia Rogowska-Tylman,
• Ganna Nechyporenko,
• Viktor Zinchenko,
• Wojciech Swieszkowski and
• Tomasz Puzyn

Beilstein J. Nanotechnol. 2018, 9, 3079–3094, doi:10.3762/bjnano.9.286

• belong to the CHO cell line, which can be explained by the nature of the reproductive system in which calcium signalling plays a crucial role. For example, calcium signals control cell division in early embryos and are very important in the development of patterning [78]. Macrophages are cells

Femtosecond laser-assisted fabrication of chalcopyrite micro-concentrator photovoltaics

• Franziska Ringleb,
• Stefan Andree,
• Berit Heidmann,
• Jörn Bonse,
• Katharina Eylers,
• Owen Ernst,
• Torsten Boeck,
• Martina Schmid and
• Jörg Krüger

Beilstein J. Nanotechnol. 2018, 9, 3025–3038, doi:10.3762/bjnano.9.281

• patterning; laser-induced forward transfer; micro-concentrator solar cell; photovoltaics; Review Introduction In the field of renewable energies, the largest growth by far on a global scale in 2015/2016 took place in photovoltaics. However, the share of renewables in total energy consumption has recently

Size limits of magnetic-domain engineering in continuous in-plane exchange-bias prototype films

• Alexander Gaul,
• Daniel Emmrich,
• Timo Ueltzhöffer,
• Henning Huckfeldt,
• Hatice Doğanay,
• Johanna Hackl,
• Muhammad Imtiaz Khan,
• Daniel M. Gottlob,
• Gregor Hartmann,
• André Beyer,
• Dennis Holzinger,
• Slavomír Nemšák,
• Claus M. Schneider,
• Armin Gölzhäuser,
• Günter Reiss and
• Arno Ehresmann

Beilstein J. Nanotechnol. 2018, 9, 2968–2979, doi:10.3762/bjnano.9.276

• limit of engineered magnetic domains depends on the magnetic patterning method and on the magnetic anisotropies of the material system. Smallest patterns are expected to be in the range of the domain wall width of the particular material system. To explore these limits a patterning technology is needed

• with a spatial resolution significantly smaller than the domain wall width. Results: We demonstrate the application of a helium ion microscope with a beam diameter of 8 nm as a mask-less method for local domain patterning of magnetic thin-film systems. For a prototypical in-plane exchange-bias system

• two-dimensional domains, the influence of domain wall overlap and domain wall geometry on the ultimate domain size in the chosen system was analyzed. Conclusion: The application of a helium ion microscope for magnetic patterning has been shown. It allowed for exploring the fundamental limits of domain

Charged particle single nanometre manufacturing

• Philip D. Prewett,
• Cornelis W. Hagen,
• Claudia Lenk,
• Steve Lenk,
• Marcus Kaestner,
• Tzvetan Ivanov,
• Ahmad Ahmad,
• Ivo W. Rangelow,
• Xiaoqing Shi,
• Stuart A. Boden,
• Alex P. G. Robinson,
• Dongxu Yang,
• Sangeetha Hari,
• Marijke Scotuzzi and
• Ejaz Huq

Beilstein J. Nanotechnol. 2018, 9, 2855–2882, doi:10.3762/bjnano.9.266

• ”. Scanning helium ion beam lithography has the advantages of virtually zero proximity effect, nanoscale patterning capability and high sensitivity in combination with a novel fullerene resist based on the sub-nanometre C60 molecule. The shot noise-limited minimum linewidth achieved to date is 6 nm. The

• and is capable of sub-10 nm patterning using either developable resists or a self-developing mode applicable for many polymeric resists, which is preferred. Like FEBIP it is potentially capable of massive parallelization for applications requiring high throughput. Keywords: charged particle beams

• [36] and this was chosen for scanning He+ ion beam lithography (SHIBL) experiments. In order to enable sub-10 nm patterning, an ultra-thin resist film, with small molecules is required. High-fidelity pattern transfer via plasma etching requires high carbon content in the resist, with as many of the

Disorder in H⁺-irradiated HOPG: effect of impinging energy and dose on Raman D-band splitting and surface topography

• Lisandro Venosta,
• Noelia Bajales,
• Sergio Suárez and
• Paula G. Bercoff

Beilstein J. Nanotechnol. 2018, 9, 2708–2717, doi:10.3762/bjnano.9.253

• observed, probably due to the bursting of the stored H2 molecules inside the HOPG matrix. This last effect may not only hint a potential path of patterning, but also contribute to the current interest of developing carbon-based materials for hydrogen storage. Raman spectra of irradiated HOPG (LD-LE, LD-HE

Pattern generation for direct-write three-dimensional nanoscale structures via focused electron beam induced deposition

• Lukas Keller and
• Michael Huth

Beilstein J. Nanotechnol. 2018, 9, 2581–2598, doi:10.3762/bjnano.9.240

• shown in Figure 9, to appear later. 2.3.3 Deposition of 3D heterostructures A whole range of new applications becomes feasible if the patterning algorithm is extended to fabricate 3D heterostructures. This, however, introduces additional complexity in the deposition process, which we briefly discuss

• sputtering to a thickness of 30 nm and 3 nm, respectively. The patterning was done by UV lithography using allresist AR-U 4040 and lift-off. In section 3.5 we state some of the execution times for the generation of the pattern files used for deposit fabrication as presented next. 3.1 Edge-angle-dependent

Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2018, 9, 2573–2580, doi:10.3762/bjnano.9.239

• at 160 °C from a sintered IGZO ceramic target by DC magnetron sputtering with a mixed gas of Ar/O2 = 29.4/0.6 sccm at a deposition pressure of 1 Pa. After patterning of the IGZO films as the active channel, a SiOx etch-stopper (200 nm), source and drain electrodes, and a 200 nm-thick SiOx passivation

Evidence of friction reduction in laterally graded materials

• Roberto Guarino,
• Gianluca Costagliola,
• Federico Bosia and
• Nicola Maria Pugno

Beilstein J. Nanotechnol. 2018, 9, 2443–2456, doi:10.3762/bjnano.9.229

• have been used in many recent studies to describe aspects of the transition from static to dynamic friction, the nucleation of rupture wave fronts, and the effects of patterning [32][33][34][35][36]. The SBM method is usually computationally faster than FEM, thus it is more practical for a qualitative