Electronic and magnetic properties of doped black phosphorene with concentration dependence

• Ke Wang,
• Hai Wang,
• Min Zhang,
• Yan Liu and
• Wei Zhao

Beilstein J. Nanotechnol. 2019, 10, 993–1001, doi:10.3762/bjnano.10.100

• element phosphorus, which hinders its application in spintronic devices [13]. Therefore, searching for methods of inducing magnetism in black phosphorene arises as a necessity for developing the next generation of spintronic devices. Substitutional doping has been proven to be an effective and promising

• Etot, EP, and Ed are the energy of the doped phosphorene, the phosphorus atoms and the dopant atoms, respectively, and N is the number of atoms in doped phosphorene. The formation energy Ef describes the average energy released by each atom in the formation of doped phosphorene. If the formation energy

• phosphorene is mainly caused by the 3p orbit–spin splitting of the dopant atom suggesting the magnetism is mainly located at the dopant atom, while the 3p orbit–spin splitting of S-doped phosphorene is induced by the 3p orbit–spin splitting in the PDOSs of neighboring phosphorus and dopant atoms. As the in

Amorphous Ni_xCo_yP-supported TiO₂ nanotube arrays as an efficient hydrogen evolution reaction electrocatalyst in acidic solution

• Yong Li,
• Peng Yang,
• Bin Wang and
• Zhongqing Liu

Beilstein J. Nanotechnol. 2019, 10, 62–70, doi:10.3762/bjnano.10.6

• phosphorus species by contact with air [21][33][34][35]. The binding energy of 129.6 eV is slightly lower than that of elemental P (130.0 eV), which suggests the P is partially negatively charged (Pδ−) [36]. Given the probing depth of 3 nm for XPS measurements, the NiCoP amorphous phase in NixCoyP/TNAs

Hybrid Au@alendronate nanoparticles as dual chemo-photothermal agent for combined cancer treatment

• Anouchka Plan Sangnier,
• Romain Aufaure,
• Laurence Motte,
• Claire Wilhelm,
• Erwann Guenin and
• Yoann Lalatonne

Beilstein J. Nanotechnol. 2018, 9, 2947–2952, doi:10.3762/bjnano.9.273

• 1113 cm−1 is characteristic for the vibrational mode for the PO3 group [32]. For Au@alendronate NPs the strong tightening of P=O and P–O vibration bands around 1000 cm−1 (red curve), which is characteristic of the chelation of phosphorus species on a metallic surface [11][16][33], suggests a

Layered calcium phenylphosphonate: a hybrid material for a new generation of nanofillers

• Kateřina Kopecká,
• Ludvík Beneš,
• Klára Melánová,
• Vítězslav Zima,
• Petr Knotek and
• Kateřina Zetková

Beilstein J. Nanotechnol. 2018, 9, 2906–2915, doi:10.3762/bjnano.9.269

• comprises metal atoms coordinated by oxygen atoms of the phosphonate groups. The outer plies are formed by benzene rings connected to the central ply through phosphorus atoms of the phosphonate groups. The model of the CaPhP layer is depicted in Figure 1. Thanks to its structure, the surface of the CaPhP

• was for H2 and the smallest for CO2. The addition of the filler increased the permeability for both these gases. In the case of hydrogen, it was approximately four times higher and in the case of CO2 even 5.6 times higher in comparison to the pristine epoxy film. Flammability Phosphorus containing

• compounds are used as flame retardant agents as an alternative to halogenated compound, which are effective but, on the other hand, they are considered to be hazardous for the environment and human health [21]. The structure of CaPhP contains a high amount of phosphorus as well as bound water molecules and

Oriented zinc oxide nanorods: A novel saturable absorber for lasers in the near-infrared

• Pavel Loiko,
• Tanujjal Bora,
• Josep Maria Serres,
• Haohai Yu,
• Magdalena Aguiló,
• Francesc Díaz,
• Uwe Griebner,
• Valentin Petrov,
• Xavier Mateos and
• Joydeep Dutta

Beilstein J. Nanotechnol. 2018, 9, 2730–2740, doi:10.3762/bjnano.9.255

• , e.g., MoS2, WS2 [16][17], black phosphorus (BP) [18]), and topological insulators (TIs, e.g., Bi2Te3, Sb2Te3 [19][20], graphitic carbon nitride (g-C3N4) [21]). In the PQS regime, such structures enable the generation of nanosecond pulses at high repetition rates (up to MHz) and they are attractive for

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

• Noel Kennedy,
• Ray Duffy,
• Luke Eaton,
• Dan O’Connell,
• Scott Monaghan,
• Shane Garvey,
• James Connolly,
• Chris Hatem,
• Justin D. Holmes and
• Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

• Applied Materials, Gloucester, Massachusetts, USA CRANN@AMBER, Trinity College Dublin, Dublin 2, Ireland 10.3762/bjnano.9.199 Abstract This paper details the application of phosphorus monolayer doping of silicon on insulator substrates. There have been no previous publications dedicated to the topic of

• them in the crystal structure. By contrast, Ye et al. have recently proposed a monolayer contact doping (MLCD) process without the need for a capping layer [13]. This paper will examine the application of phosphorus MLD to silicon on insulator (SOI) substrates with nanoscale dimensions (sub-66 nm

• necessary when carrying out phosphorus MLD. This was done using bulk silicon samples. Electrochemical capacitance–voltage (ECV) profiling is a technique that analyses the quantity of active dopant atoms present in a substrate as a function of the depth. Figure 2 shows that the application of a capping layer

Metal-free catalysis based on nitrogen-doped carbon nanomaterials: a photoelectron spectroscopy point of view

• Mattia Scardamaglia and
• Carla Bittencourt

Beilstein J. Nanotechnol. 2018, 9, 2015–2031, doi:10.3762/bjnano.9.191

• , phosphorus has five valence electrons, but its atomic radius is bigger. Therefore, its incorporation in the carbon lattice causes a protrusion out of the graphitic plane [47]. Other functional groups containing oxygen [50], hydrogen [51][52] or fluorine [53][54][55], also contribute to the modification of

• . explained the interesting interaction between oxygen and boron-containing carbon nanomaterials: because it is an electron acceptor, B easily oxidizes carbon atoms in a site-dependent way [62]. Besides boron [61][63][64], other elements that have been co-doped with nitrogen are sulfur [65] and phosphorus [66

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si_1−xGe_x and Si layers

• Richard Daubriac,
• Emmanuel Scheid,
• Hiba Rizk,
• Richard Monflier,
• Sylvain Joblot,
• Rémi Beneyton,
• Pablo Acosta Alba,
• Sébastien Kerdilès and
• Filadelfo Cristiano

Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

• investigated as a low thermal budget solution for achieving dopant activation in the top transistor level without degrading the performance of the transistors located at the bottom [39]. The efficiency of this technique has already been proven for electrical activation of phosphorus in 22 nm thick SOI

• measured at 0.77 J·cm−2 suggests that a “full melt” of the SiGe layer has already occurred at this energy and that most of the dopant activation is therefore lost. This behaviour is similar to that observed by Acosta Alba et al. [44] in 22 nm thick phosphorus-doped SOI, where the sudden increase in the

Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

• Daniel Hiller,
• Julian López-Vidrier,
• Keita Nomoto,
• Michael Wahl,
• Wolfgang Bock,
• Tomáš Chlouba,
• František Trojánek,
• Sebastian Gutsch,
• Margit Zacharias,
• Dirk König,
• Petr Malý and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2018, 9, 1501–1511, doi:10.3762/bjnano.9.141

• ), Kaiserslautern, Germany Department of Chemical Physics and Optics, Charles University, Prague, Czech Republic Integrated Materials Design Centre (IMDC), University of New South Wales (UNSW), Sydney, Australia 10.3762/bjnano.9.141 Abstract Phosphorus- and boron-doped silicon nanocrystals (Si NCs) embedded in

Ultralight super-hydrophobic carbon aerogels based on cellulose nanofibers/poly(vinyl alcohol)/graphene oxide (CNFs/PVA/GO) for highly effective oil–water separation

• Zhaoyang Xu,
• Huan Zhou,
• Sicong Tan,
• Xiangdong Jiang,
• Weibing Wu,
• Jiangtao Shi and
• Peng Chen

Beilstein J. Nanotechnol. 2018, 9, 508–519, doi:10.3762/bjnano.9.49

• (H2O2, 30%), potassium permanganate (KMnO4), concentrated sulfuric acid (H2SO4, 98%), hydrochloric acid (HCl), sodium nitrate (NaNO3), sodium chlorite (NaClO2), phosphorus pentoxide (P2O5), potassium persulfate (K2S2O8) and ammonium hydroxide (NH3·H2O) were purchased from Nanjing Chemical Reagent Co

Comparative study of post-growth annealing of Cu(hfac)₂, Co₂(CO)₈ and Me₂Au(acac) metal precursors deposited by FEBID

• Marcos V. Puydinger dos Santos,
• Aleksandra Szkudlarek,
• Artur Rydosz,
• Carlos Guerra-Nuñez,
• Fanny Béron,
• Kleber R. Pirota,
• Stanislav Moshkalev,
• José Alexandre Diniz and
• Ivo Utke

Beilstein J. Nanotechnol. 2018, 9, 91–101, doi:10.3762/bjnano.9.11

• thick CuxFyCzOz and 50 nm thick AuxCyOz depositions. Each defined a rectangular pattern of 20 × 5 μm2 onto predefined 100 nm thick Au electrodes. These electrodes were obtained by standard UV lithography on phosphorus-doped Si wafers (8 mΩ·cm) with a 200 nm thick SiO2 layer for electrodes isolation. The

Comparing postdeposition reactions of electrons and radicals with Pt nanostructures created by focused electron beam induced deposition

• Julie A. Spencer,
• Michael Barclay,
• Miranda J. Gallagher,
• Robert Winkler,
• Ilyas Unlu,
• Yung-Chien Wu,
• Harald Plank,
• Lisa McElwee-White and
• D. Howard Fairbrother

Beilstein J. Nanotechnol. 2017, 8, 2410–2424, doi:10.3762/bjnano.8.240

• could also be exploited to help redisperse metals, such as Pt, which have nucleated as a result of sintering during catalysis. Other Pt-containing deposits In contrast to the effectiveness of AH towards purification of PtCl2, there was no measureable removal of carbon or phosphorus contaminants for

• ]) a decrease in carbon content is observed from 81% to 65% upon exposing the PtCx deposits to a high-pressure AH source. However, the current work demonstrates that the efficiency of AH-mediated carbon and phosphorus purification is significantly lower than that of halogen atom removal. This

• difference in efficiency may be attributed to the number of elementary steps required to generate a stable gas-phase species from carbon (C(ads) + H(g) →→ CH4(g)) or phosphorus (P(ads) + H(g) →→ PH3(g)), coupled with the reversibility of AH addition/abstraction reactions (e.g., CH2(ads) + H(g) CH3(ads); CH2

Optical contrast and refractive index of natural van der Waals heterostructure nanosheets of franckeite

• Patricia Gant,
• Foad Ghasemi,
• David Maeso,
• Carmen Munuera,
• Elena López-Elvira,
• Riccardo Frisenda,
• David Pérez De Lara,
• Gabino Rubio-Bollinger,
• Mar Garcia-Hernandez and
• Andres Castellanos-Gomez

Beilstein J. Nanotechnol. 2017, 8, 2357–2362, doi:10.3762/bjnano.8.235

• bandgap (below 0.7 eV) and p-type doping, and that they are very resilient upon atmospheric exposure. These characteristics makes franckeite an excellent alternative to black phosphorus which tends to degrade quickly upon air exposure [20][21][22][23]. Here we study the thickness dependence of the optical

Self-assembly of chiral fluorescent nanoparticles based on water-soluble L-tryptophan derivatives of p-tert-butylthiacalix[4]arene

• Pavel L. Padnya,
• Irina A. Khripunova,
• Olga A. Mostovaya,
• Timur A. Mukhametzyanov,
• Vladimir G. Evtugyn,
• Vyacheslav V. Vorobev,
• Yuri N. Osin and
• Ivan I. Stoikov

Beilstein J. Nanotechnol. 2017, 8, 1825–1835, doi:10.3762/bjnano.8.184

• dried under reduced pressure over phosphorus pentoxide. L-tryptophan ethyl ester hydrochloride 2: 1H NMR (400 MHz, 298 K, DMSO-d6) δ 1.08 (t, 3JHH = 7.1 Hz, 3H, CH3CH2O–), 3.22–3.30 (m, 2H, CHCH2Trp), 4.07 (q, 3JHH = 7.1 Hz, 2H, CH3CH2O–), 4.19 (m, 1H, NНCHСО), 6.99–7.53 (m, 5H, ArHTrp), 8.55 (s, 1Н

• washed with water and dried under reduced pressure over phosphorus pentoxide. 5,11,17,23-Tetra-tert-butyl-25,26,27,28-tetrakis[(N-(3,3-dimethyl-3-{(ethoxycarbonyl[S-(1H-indol-3-yl)methyl]methyl)amidocarbonylmethylammonio}propyl)carbamoylmethoxy]-2,8,14,20-tetrathiacalix[4]arene tetrabromide (cone-8

Laser processing of thin-film multilayer structures: comparison between a 3D thermal model and experimental results

• Babak B. Naghshine and
• Amirkianoosh Kiani

Beilstein J. Nanotechnol. 2017, 8, 1749–1759, doi:10.3762/bjnano.8.176

• Si layer with a phosphorus- or boron-containing liquid before laser processing the surface for n- and p-type TFTs respectively [8]. Another important application is mask repairing for MEMS/NEMS device fabrication [4]. There are also many potential applications in biomedical engineering. It’s been

Group-13 and group-15 doping of germanane

• Nicholas D. Cultrara,
• Maxx Q. Arguilla,
• Shishi Jiang,
• Chuanchuan Sun,
• Michael R. Scudder,
• R. Dominic Ross and
• Joshua E. Goldberger

Beilstein J. Nanotechnol. 2017, 8, 1642–1648, doi:10.3762/bjnano.8.164

• need of extrinsic dopants to access devices with lower resistivity. In previous studies, the resistivity of germanane was reduced through the incorporation of phosphorus only when activated in the presence of atmospheric water [29]. Recently [30], undoped germanane field-effect transistors were

• lattice of the CaGe2 precursor [29][31]. Providing that these elements are retained in the germanium framework after the topotactic deintercalation process, the effect on the electronic transport behavior of GeH should be appreciable. Having previously grown phosphorus-doped GeH (P:GeH) [29] using this

• P:GeH [29], H2O-containing atmospheres are necessary to activate the phosphorus (group 15) dopants. For Ga:GeH, the presence of atmospheric water, while significantly increasing conductivity, also introduces a significantly non-linear behavior in the I–V plots, suggesting that H2O plays an additional

Two-dimensional silicon and carbon monochalcogenides with the structure of phosphorene

• Dario Rocca,
• Ali Abboud,
• Ganapathy Vaitheeswaran and
• Sébastien Lebègue

Beilstein J. Nanotechnol. 2017, 8, 1338–1344, doi:10.3762/bjnano.8.135

• electronic structure that are markedly different from those of graphene, with, for instance, the existence of a finite bandgap in the band structure [5]. One of the latest newcomers in the family of two-dimensional materials is phosphorene [6][7][8][9], which corresponds to a single layer of black phosphorus

• [10][11], one of the many phases of crystalline phosphorus. Among other properties [12][13][14][15], the values of the carrier mobility and of the on–off ratio of transistors made from phosphorene are intermediate between the values of graphene and those of transition metal dichalcogenides, making

• phosphorous [33]. Within this system each phosphorus atom is covalently bonded with three adjacent phosphorus atoms to form a puckered honeycomb structure [33][34] (Figure 1a). For the sake of simplicity this phosphorene monolayer will be denoted as “experimental structure”. Upon optimization at the PBE level

Fully scalable one-pot method for the production of phosphonic graphene derivatives

• Kamila Żelechowska,
• Marta Prześniak-Welenc,
• Marcin Łapiński,
• Izabela Kondratowicz and
• Tadeusz Miruszewski

Beilstein J. Nanotechnol. 2017, 8, 1094–1103, doi:10.3762/bjnano.8.111

• simultaneous reduction to produce phosphonated reduced graphene oxide in a novel, fully scalable, one-pot method. The phosphonic derivative of graphene was obtained through the reaction of graphene oxide with phosphorus trichloride in water. The newly synthesized reduced graphene oxide derivative was fully

• described a ball milling process to efficiently functionalize and exfoliate pristine graphite directly into graphene phosphonic acid. In the first step, graphite is ball-milled for 48 h with red phosphorus to produce a derivative that is edge-functionalized with phosphorus. Then, upon exposure to air

• retardation [4][11], catalysis [12], tissue engineering [13], and purification air and water [6][14]. Results and Discussion The phosphonic derivative of graphene (GO-P) was obtained through the reaction of GO with phosphorus trichloride in water. Phosphorous trichloride reacts with water to produce

Nanostructured carbon materials decorated with organophosphorus moieties: synthesis and application

• Giacomo Biagiotti,
• Vittoria Langè,
• Cristina Ligi,
• Stefano Caporali,
• Maurizio Muniz-Miranda,
• Anna Flis,
• K. Michał Pietrusiewicz,
• Giacomo Ghini,
• Alberto Brandi and
• Stefano Cicchi

Beilstein J. Nanotechnol. 2017, 8, 485–493, doi:10.3762/bjnano.8.52

• corresponding phosphine derivatives and applied one of the materials produced as heterogeneous organocatalyst in a Staudinger ligation reaction. Keywords: azides; click chemistry; heterogeneous catalysis; organocatalysis; phosphorus; Introduction The term of carbon nanomaterial (CNMs) comprises many different

• 12 was confirmed by the signal at 2118 cm−1 in the FTIR spectra (see Supporting Information File 1, Figures S9 and S10). The ICP-AES was used to determine the amount of phosphorus in the complex matrix. The samples were previously mineralized by treatment with nitric acid and a hydrogen peroxide

• phosphorus-phosphorus, trichlorosilane mediated oxygen transfer protocol, developed by Hamilton [16] and Wu [36], was used with compound 6 (Scheme 4). The reaction was carried out in a Pyrex tube, heating for 48 h, a degassed solvent solution of compound 6, trichlorosilane and triethyl phosphite as final

Phosphorus-doped silicon nanorod anodes for high power lithium-ion batteries

• Chao Yan,
• Qianru Liu,
• Jianzhi Gao,
• Zhibo Yang and
• Deyan He

Beilstein J. Nanotechnol. 2017, 8, 222–228, doi:10.3762/bjnano.8.24

• Chao Yan Qianru Liu Jianzhi Gao Zhibo Yang Deyan He School of Physics and Information Technology, Shaanxi Normal University, Xi’ an 710119, China School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China 10.3762/bjnano.8.24 Abstract Heavy-phosphorus-doped silicon anodes

• performance for Si-based anodes. In this work, we prepared heavy-phosphorus-doped silicon anodes on CuO nanorods for high power LIBs. In our experiments, once the voltage cut-off window was set in the range that only covers the discharge–charge range of Si, the conductivity of CuO nanorods was highly

• increased by the irreversible reaction with Li-ion during the first discharge, and the lithiated CuO played the role of an electronic conductor in the following cycles. In addition, the silicon layer was heavily doped by phosphorus and delivered a conductivity as high as 54.0 S/cm, which is vital for the

Structural and tribometric characterization of biomimetically inspired synthetic "insect adhesives"

• Matthias W. Speidel,
• Malte Kleemeier,
• Andreas Hartwig,
• Klaus Rischka,
• Angelika Ellermann,
• Rolf Daniels and
• Oliver Betz

Beilstein J. Nanotechnol. 2017, 8, 45–63, doi:10.3762/bjnano.8.6

A new approach to grain boundary engineering for nanocrystalline materials

• Shigeaki Kobayashi,
• Sadahiro Tsurekawa and
• Tadao Watanabe

Beilstein J. Nanotechnol. 2016, 7, 1829–1849, doi:10.3762/bjnano.7.176

• relationship between the Vickers hardness and the average grain size for pure nickel (Ni) and nickel–phosphorus (Ni–P) alloy specimens produced by electrodeposition and subsequent annealing. The data obtained from our recent investigation are shown together with those for pure Ni [62][64] and Ni–1.2 mass % P

• alloy [3] reported by other researchers. The state of the supersaturated solid solution in as-electrodeposited Ni–4.4 mass % P alloy specimens was confirmed, although the Ni–P phase diagram [65] indicates that the solubility limit of phosphorus into nickel matrix is 0.17 mass %. Accordingly, the Ni3P

3D printing of mineral–polymer bone substitutes based on sodium alginate and calcium phosphate

• Aleksey A. Egorov,
• Alexander Yu. Fedotov,
• Anton V. Mironov,
• Vladimir S. Komlev,
• Vladimir K. Popov and
• Yury V. Zobkov

Beilstein J. Nanotechnol. 2016, 7, 1794–1799, doi:10.3762/bjnano.7.172

• %. Glutamic acid was used to maintain a low pH value. Then, a solution of ammonium hydrogen phosphate (CAS number 7783-28-0) with concentration of 5 wt % was added as the source of phosphorus in the system. The second “ink” was calcium chloride (CAS number 10043-52-4) water solution with a concentration of 10

Ultrastructural changes in methicillin-resistant Staphylococcus aureus induced by positively charged silver nanoparticles

• Dulce G. Romero-Urbina,
• Humberto H. Lara,
• J. Jesús Velázquez-Salazar,
• M. Josefina Arellano-Jiménez,
• Eduardo Larios,
• Anand Srinivasan,
• Jose L. Lopez-Ribot and
• Miguel José Yacamán

Beilstein J. Nanotechnol. 2015, 6, 2396–2405, doi:10.3762/bjnano.6.246

• permeability [38]. After penetrating the cell membrane, AgNPs can also alter sulfur-containing amino acids and phosphorus (a main constituent of DNA), inhibiting replication via attaching to the bacterial ribosome [39][40]. The proteomic signatures of AgNP-treated E. coli demonstrated an accumulation of

Electrochemical coating of dental implants with anodic porous titania for enhanced osteointegration

• Amirreza Shayganpour,
• Alberto Rebaudi,
• Pierpaolo Cortella,
• Alberto Diaspro and
• Marco Salerno

Beilstein J. Nanotechnol. 2015, 6, 2183–2192, doi:10.3762/bjnano.6.224

• at %), given the deep penetration (≥1 µm) of the energetic, primary electrons (10 kV) with respect to the APT thickness (≈100 nm), such that the probed volume is mainly in the bulk of the Ti implant under the surface. In Figure 3b a new type of contamination, phosphorus, also appears at a