A visible-light photodetector based on heterojunctions between CuO nanoparticles and ZnO nanorods

• Doan Nhat Giang,
• Nhat Minh Nguyen,
• Duc Anh Ngo,
• Thanh Trang Tran,
• Le Thai Duy,
• Cong Khanh Tran,
• Thi Thanh Van Tran,
• Phan Phuong Ha La and
• Vinh Quang Dang

Beilstein J. Nanotechnol. 2023, 14, 1018–1027, doi:10.3762/bjnano.14.84

• through the device considerably rises. The value of the photocurrent rises with the increase of the light intensity according to the formula [44] Iph = APθ, where Iph is the photocurrent, A is a constant wavelength, P is the light intensity, and θ is a constant related to the photosensitivity of the

Recent progress in cancer cell membrane-based nanoparticles for biomedical applications

• Qixiong Lin,
• Yueyou Peng,
• Yanyan Wen,
• Xiaoqiong Li,
• Donglian Du,
• Weibin Dai,
• Wei Tian and
• Yanfeng Meng

Beilstein J. Nanotechnol. 2023, 14, 262–279, doi:10.3762/bjnano.14.24

• been applied to treat prostate cancer [56]. This nanoagent shows good drug-loading capacity and photosensitivity and can be applied in NIR photothermal conversion. After the autophagy inhibitor chloroquine (CQ) was loaded onto the nanocarrier, it was coated with prostate cancer cell membrane for tumor

Absorption and photoconductivity spectra of amorphous multilayer structures

• Oxana Iaseniuc and
• Mihail Iovu

Beilstein J. Nanotechnol. 2020, 11, 1757–1763, doi:10.3762/bjnano.11.158

• Sn impurities on stationary and transient photoconductivity was demonstrated for amorphous As2Se3Snx thin films [5]. The introduction of Sn in the host material increases the drift mobility and the photosensitivity of the amorphous material. According to 119Sn Mössbauer spectroscopy studies of the

• thin films and HS Al–As0.40S0.30Se0.30/Ge0.09As0.09Se0.82/Ge.0.30As0.04S0.66–Al with positive or negative voltage applied to the illuminated top Al electrode. The steady-state photocurrent spectra show that the maximum of photosensitivity of the component layers of the multilayer HS is in a good

• thin-film HS as a function of the applied voltage with positive (1) and with negative (2) polarity. The photosensitivity is higher when the voltage applied at the illuminated top Al electrode has a positive polarity, which was also demonstrated for structures of single thin films [7]. Conclusion The

Excitonic and electronic transitions in Me–Sb₂Se₃ structures

• Nicolae N. Syrbu,
• Victor V. Zalamai,
• Ivan G. Stamov and
• Stepan I. Beril

Beilstein J. Nanotechnol. 2020, 11, 1045–1053, doi:10.3762/bjnano.11.89

• photosensitivity over a wide energy range (1–1.8 eV, Figure 4). When a voltage range from 0 to 2 V was applied to the indium contacts, the photoconductivity maximum was registered at 1.168 eV for both polarization cases (E⟂c and E||c). This happens due to the direct electronic transitions in the bandgap minimum

Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films

• Vadim Morari,
• Aida Pantazi,
• Nicolai Curmei,
• Vitalie Postolache,
• Emil V. Rusu,
• Marius Enachescu,
• Ion M. Tiginyanu and
• Veaceslav V. Ursaki

Beilstein J. Nanotechnol. 2020, 11, 899–910, doi:10.3762/bjnano.11.75

• ; photoluminescence; photosensitivity; spin coating; thin films; ZnMgO semiconductor alloy; Introduction The ZnMgO solid solution system is of interest due to the possibility to tailor many important physical properties by varying their composition. This alloy system covers a wide ultraviolet (UV) spectral range

• demonstrated photosensitivity under UV light irradiation, where the photosensitivity was much higher in samples prepared by spin coating as compared to those prepared by aerosol spray pyrolysis. Additionally, the resistivity of films deposited by spin coating was found to be much higher. Apart from that, a

Rational design of block copolymer self-assemblies in photodynamic therapy

• Maxime Demazeau,
• Laure Gibot,
• Anne-Françoise Mingotaud,
• Patricia Vicendo,
• Clément Roux and
• Barbara Lonetti

Beilstein J. Nanotechnol. 2020, 11, 180–212, doi:10.3762/bjnano.11.15

• photosensitizer. Thus, typical PDT side effects, i.e., patient skin photosensitivity, can be avoided. The hydrophilic block of the copolymers will influence the interactions with the surrounding biological media and, in particular, will play a role in the distribution in the body and in cells. The properties of

Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

• Botond Sánta,
• Dániel Molnár,
• Patrick Haiber,
• Agnes Gubicza,
• Edit Szilágyi,
• Zsolt Zolnai,
• András Halbritter and
• Miklós Csontos

Beilstein J. Nanotechnol. 2020, 11, 92–100, doi:10.3762/bjnano.11.9

• single exception of its photosensitivity. The latter offers a further possibility for a combined electrical and optical manipulation of the resistance states. Instrumental developments for high-speed resistive switching measurements In order to investigate resistive switching in STM based nanojunctions

Microfluidic manufacturing of different niosomes nanoparticles for curcumin encapsulation: Physical characteristics, encapsulation efficacy, and drug release

• Mohammad A. Obeid,
• Ibrahim Khadra,
• Abdullah Albaloushi,
• Margaret Mullin,
• Hanin Alyamani and
• Valerie A. Ferro

Beilstein J. Nanotechnol. 2019, 10, 1826–1832, doi:10.3762/bjnano.10.177

• cancer such as prostate and cervical cancers [3]. However, the therapeutic application of curcumin is limited by its high hydrophobicity with poor water solubility, photosensitivity, chemical instability, and rapid metabolism rate [4][5]. Therefore, as a result, systemic bioavailability is much reduced

Remarkable electronic and optical anisotropy of layered 1T’-WTe₂ 2D materials

• Qiankun Zhang,
• Rongjie Zhang,
• Jiancui Chen,
• Wanfu Shen,
• Chunhua An,
• Xiaodong Hu,
• Mingli Dong,
• Jing Liu and
• Lianqing Zhu

Beilstein J. Nanotechnol. 2019, 10, 1745–1753, doi:10.3762/bjnano.10.170

• °, respectively, can be observed by comparing Figure 4a with Figure 4b. Thus, the angle-dependent photosensitivity can be observed from the two figures. To further probe the angle-resolved photosensitivity of our device, we first held the incident laser at fixed values (wavelength: 633 nm, power 1.4 mW), then

• to the test angles at 60° and 150°, respectively, which indicates the highly anisotropic photosensitivity of our device based on 1T’-WTe2. Additionally, the photosensitivity was defined as: where Rph is the photoresponsivity, Ion and Idark are the current in the laser on and off state, respectively

• , and P is the power of the illumination laser. A more detailed observation of the polarization-resolved photosensitivity in terms of the test angle of the TE/RE pairs with variation from 0° to 360° is displayed in Figure 4d. The dramatic fluctuation of Rph for all the test angles can be observed from

Pure and mixed ordered monolayers of tetracyano-2,6-naphthoquinodimethane and hexathiapentacene on the Ag(100) surface

• Robert Harbers,
• Timo Heepenstrick,
• Dmitrii F. Perepichka and
• Moritz Sokolowski

Beilstein J. Nanotechnol. 2019, 10, 1188–1199, doi:10.3762/bjnano.10.118

• have a “great potential for use in next-generation textile and wearable electronics” [22]. HTPEN was investigated as a material for organic solar cells [23], for which purpose it was combined with lead(II) phthalocyanine and pentacene. These heterostructures exhibit a greater range of photosensitivity

Study of silica-based intrinsically emitting nanoparticles produced by an excimer laser

• Imène Reghioua,
• Mattia Fanetti,
• Sylvain Girard,
• Diego Di Francesca,
• Simonpietro Agnello,
• Layla Martin-Samos,
• Marco Cannas,
• Matjaz Valant,
• Melanie Raine,
• Marc Gaillardin,
• Nicolas Richard,
• Philippe Paillet,
• Aziz Boukenter,
• Youcef Ouerdane and
• Antonino Alessi

Beilstein J. Nanotechnol. 2019, 10, 211–221, doi:10.3762/bjnano.10.19

• absorption band at ≈5.1 eV (≈240 nm) and for emission activity at ≈3.2 eV (≈390 nm) and ≈4.3 eV (290 nm) [19][24]. It is relevant to mention that the GLPCs are known to play a key role in the photosensitivity of the Ge-doped silica [25][26] used in fiber Bragg grating (FBG) manufacturing [27][28]. Moreover

Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Eleonora M. Danilina and
• Sergei N. Chebotarev

Beilstein J. Nanotechnol. 2018, 9, 2794–2801, doi:10.3762/bjnano.9.261

• follows from the above that it is possible to manipulate the photosensitivity spectrum of heterostructures through three methods: 1) the size, shape and density of the quantum dot; 2) the vertical stacking of quantum dot arrays; 3) the material of the barrier layers surrounding the quantum dots. We and

• 3D growth but has some limitations for a number of functional applications such as manipulating the photosensitivity spectrum in the infrared region. The solution to the problem can be found by the selection of a potential-barrier material for QDs based on III–V multicomponent solid solutions. GaAsSb

Lead-free hybrid perovskites for photovoltaics

• Oleksandr Stroyuk

Beilstein J. Nanotechnol. 2018, 9, 2209–2235, doi:10.3762/bjnano.9.207

• % thus coming into the same league as lead-halide HPs [173]. A series of (N-methylpyrrolidinium)3Sb2Cl9−9xBr9x (x = 0−1) HPs was reported to have bandgaps tunable from 2.76 eV (x = 1) to 3.31 eV (x = 0) and to exhibit photosensitivity levels high enough for the application of such compounds in UV–vis

Role of RGO support and irradiation source on the photocatalytic activity of CdS–ZnO semiconductor nanostructures

• Suneel Kumar,
• Rahul Sharma,
• Vipul Sharma,
• Gurunarayanan Harith,
• Vaidyanathan Sivakumar and
• Venkata Krishnan

Beilstein J. Nanotechnol. 2016, 7, 1684–1697, doi:10.3762/bjnano.7.161

• longer electron life time than TiO2 [14][15][16]. Zinc oxide is a well-known semiconductor with a band gap energy of 3.37 eV and has been widely explored as photocatalytic material due to its non-toxic nature, high exciton binding energy (60 meV), photosensitivity and stability on exposure to high energy

Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties

• Ionel Stavarache,
• Valentin Adrian Maraloiu,
• Petronela Prepelita and
• Gheorghe Iordache

Beilstein J. Nanotechnol. 2016, 7, 1492–1500, doi:10.3762/bjnano.7.142

• , good process compatibility with the well-developed CMOS technology, and the extension of the photosensitivity range to the near-infrared (NIR) are the properties that make devices based on Ge nanoparticles (Ge-nps) promising candidates to substitute or to improve the conventional Si-based devices [1][2

• this case). Figure 2c reveals that Ge-nps are randomly distributed in the SiO2 matrix. The results of electron microscopy investigations performed on films deposited at 500 °C are in good agreement with the XRD measurements. To test the photosensitivity properties of the material employed in the

• characteristic with the largest increase of the photoresponse was observed for the reference structure fabricated at 500 °C and it is presented in Figure 6. It shows a very small increase of the current density under illumination compared with dark conditions. The much higher photosensitivity of the test

Determination of Young’s modulus of Sb₂S₃ nanowires by in situ resonance and bending methods

• Liga Jasulaneca,
• Raimonds Meija,
• Alexander I. Livshits,
• Juris Prikulis,
• Subhajit Biswas,
• Justin D. Holmes and
• Donats Erts

Beilstein J. Nanotechnol. 2016, 7, 278–283, doi:10.3762/bjnano.7.25

• photosensitivity [3], its large absorption coefficient [4][5] and direct band gap in the visible and near infrared range (1.78–2.5 eV) [6][7][8]. Owing to these properties, Sb2S3 has also been considered as an attractive material for microwave frequency [9], optical recording [10] and photovoltaic [2][11

Influence of wide band gap oxide substrates on the photoelectrochemical properties and structural disorder of CdS nanoparticles grown by the successive ionic layer adsorption and reaction (SILAR) method

• Mikalai V. Malashchonak,
• Alexander V. Mazanik,
• Olga V. Korolik,
• Еugene А. Streltsov and
• Anatoly I. Kulak

Beilstein J. Nanotechnol. 2015, 6, 2252–2262, doi:10.3762/bjnano.6.231

• when the nanoparticles diameter is less than 2 nm [25]. However, in our experiments, even at N = 5 the NP diameter, estimated from the photosensitivity edge position, exceeds 3 nm [26]. The band associated with scattering by DAZE phonons is observed at ≈293 cm−1 for CdS nanoparticles [27], that is, at

Tattoo ink nanoparticles in skin tissue and fibroblasts

• Colin A. Grant,
• Peter C. Twigg,
• Richard Baker and
• Desmond J. Tobin

Beilstein J. Nanotechnol. 2015, 6, 1183–1191, doi:10.3762/bjnano.6.120

• and could pose other health risks to the skin [4]. Further, it was recently reported that tattooed young individuals can exhibit adverse reactions, especially with black or red ink tattoos, including photosensitivity, skin elevation and itching [5]. Nanoparticle research is currently receiving a great

Observation of a photoinduced, resonant tunneling effect in a carbon nanotube–silicon heterojunction

• Carla Aramo,
• Antonio Ambrosio,
• Michelangelo Ambrosio,
• Maurizio Boscardin,
• Paola Castrucci,
• Michele Crivellari,
• Marco Cilmo,
• Maurizio De Crescenzi,
• Francesco De Nicola,
• Emanuele Fiandrini,
• Valentina Grossi,
• Pasqualino Maddalena,
• Maurizio Passacantando,
• Sandro Santucci,
• Manuela Scarselli and
• Antonio Valentini

Beilstein J. Nanotechnol. 2015, 6, 704–710, doi:10.3762/bjnano.6.71

• rapid decrease of the charge accumulation layer of the heterojunction around the threshold. The CNT–Si junction exhibits interesting photosensitivity properties. While the substrate is light insensitive, the device with CNT deposited on the Si3N4 layer is greatly sensitive to radiation in the range from

• presents rectifying properties with a 2.4 V threshold to the flow of reverse current, a strong photosensitivity to light radiation at wavelengths between 378 and 980 nm, a very broad plateau extended over a large range of drain voltages, and a good linearity of the photoresponsivity versus light intensity

Nanobioarchitectures based on chlorophyll photopigment, artificial lipid bilayers and carbon nanotubes

• Marcela Elisabeta Barbinta-Patrascu,
• Stefan Marian Iordache,
• Ana Maria Iordache,
• Nicoleta Badea and
• Camelia Ungureanu

Beilstein J. Nanotechnol. 2014, 5, 2316–2325, doi:10.3762/bjnano.5.240

• titanium probe sonicator, UP 100H, 15 min with breaks). Figure 1 shows the schematic representation of the ultrasound-mediated biohybrid preparation resulting in two types of biocomposites: Chla–DPPC–MLVs/CNTs hybrid (sample V3) and Chla–Chol–DPPC–MLVs/CNTs hybrid (sample V4). Due to the photosensitivity

Growth evolution and phase transition from chalcocite to digenite in nanocrystalline copper sulfide: Morphological, optical and electrical properties

• Priscilla Vasthi Quintana-Ramirez,
• Ma. Concepción Arenas-Arrocena,
• José Santos-Cruz,
• Marina Vega-González,
• Omar Martínez-Alvarez,
• Víctor Manuel Castaño-Meneses,
• Laura Susana Acosta-Torres and
• Javier de la Fuente-Hernández

Beilstein J. Nanotechnol. 2014, 5, 1542–1552, doi:10.3762/bjnano.5.166

• ). It is clear that the amorphous CuxS presents a low photosensitivity in contrast to the crystalline CuxS samples obtained from organic solution, which are slightly photosensible, suggesting a photo-generation of carrier charges. The current increases gradually as a function of the time exposed to the

Growth and characterization of CNT–TiO₂ heterostructures

• Yucheng Zhang,
• Ivo Utke,
• Johann Michler,
• Gabriele Ilari,
• Marta D. Rossell and
• Rolf Erni

Beilstein J. Nanotechnol. 2014, 5, 946–955, doi:10.3762/bjnano.5.108

• , combining TiO2 nanocrystals and carbon nanotubes (CNTs) offers enhanced photosensitivity and improved photocatalytic efficiency, which is key to achieving sustainable energy and preventing environmental pollution. Hence, it has aroused a tremendous research interest. This report surveys recent research on

Ultraviolet photodetection of flexible ZnO nanowire sheets in polydimethylsiloxane polymer

• Jinzhang Liu,
• Nunzio Motta and
• Soonil Lee

Beilstein J. Nanotechnol. 2012, 3, 353–359, doi:10.3762/bjnano.3.41

• Figure 4d on a logarithmic scale. The maximum photocurrent of the device in air is 86 μA, while that of the device in PDMS reaches 476 µA. The PDMS coating over ZnO nanowires leads to an enhancement of the UV photosensitivity and prolongs the decay time. The rise of the photocurrent and the dark current