Nickel nanoparticle-decorated reduced graphene oxide/WO₃ nanocomposite – a promising candidate for gas sensing

• Ilka Simon,
• Alexandr Savitsky,
• Rolf Mülhaupt,
• Vladimir Pankov and
• Christoph Janiak

Beilstein J. Nanotechnol. 2021, 12, 343–353, doi:10.3762/bjnano.12.28

• 200 to 400 °C, which means a high power consumption [4]. WO3 is a wide-bandgap [12][13] n-type semiconductor [14][15] with good sensitivity towards NO2 [16] and CO [17]. Known successful routes to improve the MOS gas sensing performance are doping with transition metals, decoration with noble metals

• , and greater stability than pure WO3 [20]. WO3 decorated with palladium nanoparticles on the surface can be used as an improved and reusable gas sensor for NH3 [21]. Metal oxide semiconductor junctions can either be formed between two p-type MOS or two n-type MOS (p–p/n–n homojunctions) or between a p

• high response to gas molecules at room temperature [30]. A disadvantage of rGO gas sensors is the long recovery time because of the high binding force between gas molecules and the graphene material [31]. rGO is a p-type semiconductor and can be used for gas sensing of low concentrations of NO2 at room

Extended iron phthalocyanine islands self-assembled on a Ge(001):H surface

• Rafal Zuzak,
• Marek Szymonski and
• Szymon Godlewski

Beilstein J. Nanotechnol. 2021, 12, 232–241, doi:10.3762/bjnano.12.19

• analysis of single FePc molecules trapped at surface defects indicates that the molecules stay intact upon adsorption and can be manipulated away from surface defects onto a perfectly hydrogenated surface. This allows for their isolation from the germanium surface. Keywords: hydrogenated semiconductor

• on hydrogen-passivated Si or Ge surfaces [36][37][38][39]. For instance, it has been shown that on Ge(001):H those molecules form hexagonal islands composed from flat-lying molecules that are sufficiently decoupled from the underlying semiconductor [36]. Vicinal Si(001):H has been applied in order to

• from the influence of the underlying germanium by the passivating hydrogen layer. This is in line with previous reports showing that other organic compounds are well decoupled from the surface by hydrogen, unless they are contacted with the underlying semiconductor through atomic-scale defects, that is

ZnO and MXenes as electrode materials for supercapacitor devices

• Ameen Uddin Ammar,
• Ipek Deniz Yildirim,
• Feray Bakan and
• Emre Erdem

Beilstein J. Nanotechnol. 2021, 12, 49–57, doi:10.3762/bjnano.12.4

• and 3D materials will be of utmost benefit to the interested community. Review ZnO as electrode material for supercapacitors Zinc oxide (ZnO) is a highly defective semiconductor material, regardless of its synthesis route, that has a large bandgap energy (Eg) at room temperature. However, defect types

• the existence of the defects. Owing to the extreme sensitivity of EPR spectroscopy (1011 spins/g) to paramagnetically active defect centers, one may correlate the information on the local electronic configuration from EPR spectra with Raman and PL spectra. Thus, when such semiconductor materials are

• semiconductor metal oxide, here ZnO, is processed chemically or physically as an electrode. This is rather complicated and it is important which method is used to test the electrical properties. The common method is the three-point method in which the material is tested with a counter and a reference electrode

Atomic layer deposited films of Al₂O₃ on fluorine-doped tin oxide electrodes: stability and barrier properties

• Hana Krýsová,
• Michael Neumann-Spallart,
• Hana Tarábková,
• Pavel Janda,
• Ladislav Kavan and
• Josef Krýsa

Beilstein J. Nanotechnol. 2021, 12, 24–34, doi:10.3762/bjnano.12.2

• alumina coatings was ascribed to its capability of passivating semiconductor/electrolyte interfaces, thus reducing photogenerated charge-carrier recombination (e.g., on BiVO4 [16]). In this work, Al2O3 films were deposited via ALD on thermally grown SiO2 on silicon or on fluorine-doped tin oxide (FTO

• ), at sites that were not covered by the semiconductor, was blocked. This blocking layer (also called electron-selective layer) is a key component of dye-sensitized [19] and perovskite solar cells [21]. The blocking function consists in supporting vectorial electron transport from a photoexcited light

Bio-imaging with the helium-ion microscope: A review

• Matthias Schmidt,
• James M. Byrne and
• Ilari J. Maasilta

Beilstein J. Nanotechnol. 2021, 12, 1–23, doi:10.3762/bjnano.12.1

• years. Ionoluminescense in the HIM (IL-HIM) was used by Veligura et al. to investigate NaCl and semiconductor materials [21][22][23]. Franklin first investigated the suitability of IL-HIM for studying biological specimens tagged with fluorescent markers [24]. Another application in bio-imaging was

Free and partially encapsulated manganese ferrite nanoparticles in multiwall carbon nanotubes

• Saja Al-Khabouri,
• Salim Al-Harthi,
• Toru Maekawa,
• Mohamed E. Elzain,
• Ashraf Al-Hinai,
• Ahmed D. Al-Rawas,
• Abbsher M. Gismelseed,
• Ali A. Yousif and
• Myo Tay Zar Myint

Beilstein J. Nanotechnol. 2020, 11, 1891–1904, doi:10.3762/bjnano.11.170

• , experimentally, bulk MnFe2O4 is known to have semiconductor properties [18]. The spectrum shown in Figure 1e contains a main peak at approx. 5.4 eV and weaker peaks at approx. 9.7 eV and 12.1 eV. By comparing the spectrum with the band structure calculations, the first peak (indicated by an arrow in the spectrum

Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

• Jianqi Dong,
• Liang Chen,
• Yuqing Yang and
• Xingfu Wang

Beilstein J. Nanotechnol. 2020, 11, 1847–1853, doi:10.3762/bjnano.11.166

• Jianqi Dong Liang Chen Yuqing Yang Xingfu Wang Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, China School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China 10.3762/bjnano.11.166 Abstract 1D

• semiconductor nanowires (NWs) have been extensively studied in recent years due to the predominant mechanical flexibility caused by a large surface-to-volume ratio and unique electrical and optical properties induced by the 1D quantum confinement effect. Herein, we use a top-down two-step preparation method to

• effect; strain sensors; strain tests; top-down method; Introduction Due to the non-centrosymmetric structure of the group-III nitride semiconductor materials (e.g., GaN, AlN, and AlGaN), spontaneous polarization (Psp) and piezoelectric polarization induced by lattice mismatch (Plm) are inevitably

Unravelling the interfacial interaction in mesoporous SiO₂@nickel phyllosilicate/TiO₂ core–shell nanostructures for photocatalytic activity

• Bridget K. Mutuma,
• Xiluva Mathebula,
• Isaac Nongwe,
• Bonakele P. Mtolo,
• Boitumelo J. Matsoso,
• Rudolph Erasmus,
• Zikhona Tetana and
• Neil J. Coville

Beilstein J. Nanotechnol. 2020, 11, 1834–1846, doi:10.3762/bjnano.11.165

• . The photoexcited electrons and the presence of holes result in the oxidization of organic dyes via a free-radical mechanism. However, TiO2 is a wide-bandgap semiconductor (3.0–3.3 eV), which can only absorb UV light and it easily undergoes electron–hole recombination [11]. To circumvent this problem

• heterogeneous catalysts is determined by the positions of the conduction band (CB) and the valence band (VB) for each semiconductor. For example, nickel-containing compounds with Ni2+ ions are known to have a lower CB edge than TiO2 [30][71]. Therefore, in this study, it can be postulated that a photoinduced

Nanocasting synthesis of BiFeO₃ nanoparticles with enhanced visible-light photocatalytic activity

• Thomas Cadenbach,
• Maria J. Benitez,
• A. Lucia Morales,
• Cesar Costa Vera,
• Luis Lascano,
• Francisco Quiroz,
• Alexis Debut and
• Karla Vizuete

Beilstein J. Nanotechnol. 2020, 11, 1822–1833, doi:10.3762/bjnano.11.164

• the production of secondary waste products that require further treatment. Advanced oxidation processes, in general, and heterogeneous semiconductor photocatalysis, in particular, are promising candidates to efficiently treat wastewater as they are cost-effective and green treatment methods in which

• experiments with different scavengers, such as AgNO3, ethylenediaminetetraacetic acid (EDTA), tert-butyl alcohol (TBA), and benzoquinone (BQ), was performed. It is generally well-accepted that in semiconductor photocatalysis the reaction of promoted electrons with molecular oxygen leads to superoxide anion

Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy

• Rosine Coq Germanicus,
• Peter De Wolf,
• Florent Lallemand,
• Catherine Bunel,
• Serge Bardy,
• Hugues Murray and
• Ulrike Lüders

Beilstein J. Nanotechnol. 2020, 11, 1764–1775, doi:10.3762/bjnano.11.159

• microscopy (sMIM). sMIM allows for the characterization of the local electrical properties through the analysis of the microwave impedance of the metal–insulator–semiconductor nanocapacitor (nano-MIS capacitor) that is formed by tip and sample. A highly integrated monolithic silicon PIN diode with a 3D

• modes provide sub-10 nm two-dimensional maps of the electrical properties of doped semiconductor layers [1][6][7][8] when a fixed bias is applied to the nanoscale contact. In SSRM, a DC voltage is applied to the sample and the resulting current, flowing from the conductive tip through the sample to the

• back contact, is recorded using a logarithmic amplifier with a wide dynamic range [9][10]. Based on the measured current, the overall equivalent resistance, including the conductive tip resistance, the spreading resistance of the semiconductor under the contact, the bulk resistance of the sample, and

Absorption and photoconductivity spectra of amorphous multilayer structures

• Oxana Iaseniuc and
• Mihail Iovu

Beilstein J. Nanotechnol. 2020, 11, 1757–1763, doi:10.3762/bjnano.11.158

• applied field becomes higher than the internal electrical field. For amorphous semiconductors the barrier height of an Al–semiconductor contact, with a work function of φm = 4.18 eV, is φb = 0.40–0.75 eV [14][17]. This is very important from a practical point of view, because there is the possibility to

Direct observation of the Si(110)-(16×2) surface reconstruction by atomic force microscopy

• Tatsuya Yamamoto,
• Ryo Izumi,
• Kazushi Miki,
• Takahiro Yamasaki,
• Yasuhiro Sugawara and
• Yan Jun Li

Beilstein J. Nanotechnol. 2020, 11, 1750–1756, doi:10.3762/bjnano.11.157

• high-performance metal–oxide–semiconductor field-effect transistors (p-MOSFETs) [1][2] because the hole mobility of Si(110) is twice that of the other Si planes [3]. For surface science research, Si(110) has been used as a template substrate for self-assembled nanowires [4][5][6], nanomeshes [7], and

Seebeck coefficient of silicon nanowire forests doped by thermal diffusion

• Shaimaa Elyamny,
• Elisabetta Dimaggio and
• Giovanni Pennelli

Beilstein J. Nanotechnol. 2020, 11, 1707–1713, doi:10.3762/bjnano.11.153

• through a diffusion process, based on a solid source (see Methods section). The main point is that the diffusion process must be performed in a single step (predeposition step), because a drive-in step, typical of the standard diffusion processes currently applied in the semiconductor industry, would

Functional nanostructures for electronics, spintronics and sensors

• Anatolie S. Sidorenko

Beilstein J. Nanotechnol. 2020, 11, 1704–1706, doi:10.3762/bjnano.11.152

• development of microelectronics and computers, based on traditional semiconductor chips, has followed the empirical Moore’s Law (formulated by one of the founders of Intel Corporation, Gordon Moore) for over four decades. Since 1965, Intel has designed chips that fit twice as many transistors into the same

• , Pentium II, Pentium III and Pentium IV, described the stagnation of semiconductor technology as follows [1]: “Officially Moore’s Law ends in 2020 at 7 nm, but nobody cares, because 11 nm isn’t any better than 14 nm, which was only marginally better than 22 nm … thermal dissipation issues thoroughly

• consumption, and at the same time, limits the clock frequency of semiconductor computers to 4–5 GHz. This frequency limit occurs due to temperature limitations posed at the integration level and the switching rate of transistors. It is important to realize that cryogenic cooling of semiconductor chips will

The influence of an interfacial hBN layer on the fluorescence of an organic molecule

• Christine Brülke,
• Oliver Bauer and
• Moritz M. Sokolowski

Beilstein J. Nanotechnol. 2020, 11, 1663–1684, doi:10.3762/bjnano.11.149

• pumped cw semiconductor laser (Coherent Sapphire LP UBB CDRH) with a wavelength of 458 nm (photon energy of 2.698 eV or 21,816 cm−1) and P = 50 mW. To block the laser light from entering the spectrometer, a long-pass filter (cut-off at 475 nm) was positioned in front of the entrance slit of the

Amorphized length and variability in phase-change memory line cells

• Nafisa Noor,
• Sadid Muneer,
• Raihan Sayeed Khan,
• Anna Gorbenko and
• Helena Silva

Beilstein J. Nanotechnol. 2020, 11, 1644–1654, doi:10.3762/bjnano.11.147

• voltage was monitored with the channel 1 of the oscilloscope and the voltage across the parallel combination of two 50 Ω resistors was monitored with channels 3 and 4 to extract the current through the cell. A semiconductor parameter analyzer (Agilent 4156C) was used for low-voltage read operations with a

A self-powered, flexible ultra-thin Si/ZnO nanowire photodetector as full-spectrum optical sensor and pyroelectric nanogenerator

• Liang Chen,
• Jianqi Dong,
• Miao He and
• Xingfu Wang

Beilstein J. Nanotechnol. 2020, 11, 1623–1630, doi:10.3762/bjnano.11.145

• Liang Chen Jianqi Dong Miao He Xingfu Wang Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, China School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China 10.3762/bjnano.11.145 Abstract In this

PTCDA adsorption on CaF₂ thin films

• Philipp Rahe

Beilstein J. Nanotechnol. 2020, 11, 1615–1622, doi:10.3762/bjnano.11.144

• of 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) on metal [6][7][8][9][10][11][12], semiconductor [13], and insulator surfaces [14][15][16][17][18][19], as well as the deposition on conducting surfaces covered by insulating thin films [20][21][22][23][24] or two-dimensional materials [25]. It

• partially KBr-covered Ag(111) surfaces [24] as well as for cyanoporphyrin molecules on KBr-covered Cu(111) surfaces [26]. Here, the understanding of molecular adsorption on insulating thin films is extended by studying an insulator-on-semiconductor system, namely CaF2 thin films grown on Si(111) surfaces

Oxidation of Au/Ag films by oxygen plasma: phase separation and generation of nanoporosity

• Abdel-Aziz El Mel,
• Said A. Mansour,
• Mujaheed Pasha,
• Atef Zekri,
• Janarthanan Ponraj,
• Akshath Shetty and
• Yousef Haik

Beilstein J. Nanotechnol. 2020, 11, 1608–1614, doi:10.3762/bjnano.11.143

• oxygen, solid-state diffusion in metal alloys as well as the Kirkendall effect. The nanoporous microspheres generated by the silver oxidation within the Au/Ag alloy film might have potential applications to the field of gas sensors and catalysis since those require nanoporous semiconductor materials with

High-responsivity hybrid α-Ag₂S/Si photodetector prepared by pulsed laser ablation in liquid

• Raid A. Ismail,
• Hanan A. Rawdhan and
• Duha S. Ahmed

Beilstein J. Nanotechnol. 2020, 11, 1596–1607, doi:10.3762/bjnano.11.142

• Ag2S nanoparticles, while the origin of carbon is CTAB. Hall measurement revealed that the Ag2S had a negative Hall coefficient, indicating that it is an n-type semiconductor. This finding agrees well with [39]. Figure 11 shows the dark I–V characteristics of an n-Ag2S/p-Si heterojunction prepared

Optically and electrically driven nanoantennas

• Monika Fleischer,
• Dai Zhang and
• Alfred J. Meixner

Beilstein J. Nanotechnol. 2020, 11, 1542–1545, doi:10.3762/bjnano.11.136

• SERS signal under operation conditions. Moving further towards the (near-) infrared regime, different antennas are employed in a surface-enhanced infrared absorption (SEIRA) configuration [45]. Here the aim is to detect low concentrations of semiconductor nanocrystals through maximum local enhancement

A wideband cryogenic microwave low-noise amplifier

• Boris I. Ivanov,
• Dmitri I. Volkhin,
• Ilya L. Novikov,
• Dmitri K. Pitsun,
• Dmitri O. Moskalev,
• Ilya A. Rodionov,
• Evgeni Il’ichev and
• Aleksey G. Vostretsov

Beilstein J. Nanotechnol. 2020, 11, 1484–1491, doi:10.3762/bjnano.11.131

• of liquid helium [11][12][13][14][15][16] and are, usually, placed at the 4 K stage of dilution refrigerators. These amplifiers can be implemented using two modern semiconductor transistor technologies, that is, high-electron-mobility transistor (HEMT) technology, including GaAs and InP, and SiGe

• than 30 dB in the frequency range from 8 to 12 GHz. The evolving semiconductor technology provides the modern market with state-of-art commercially available transistors to substitute old types. A new type of commercially available transistors was used for the cLNA presented in this paper. A

Antimicrobial metal-based nanoparticles: a review on their synthesis, types and antimicrobial action

• Matías Guerrero Correa,
• Fernanda B. Martínez,
• Cristian Patiño Vidal,
• Camilo Streitt,
• Juan Escrig and
• Carol Lopez de Dicastillo

Beilstein J. Nanotechnol. 2020, 11, 1450–1469, doi:10.3762/bjnano.11.129

• been applied in the food packaging industry and also in the medical field, as shown in Table 3. ZnO is a semiconductor metal oxide with significant antimicrobial properties that can be further improved when applied as a nanomaterial. ZnO NPs have potential application in food preservation as well as

Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir

• Mathias Franz,
• Romy Junghans,
• Paul Schmitt,
• Adriana Szeghalmi and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2020, 11, 1439–1449, doi:10.3762/bjnano.11.128

• metal–insulator–semiconductor or metal–insulator–metal capacitors with a high effective area on a small footprint. The high surface area of a silicon nanowire array can be used to fabricate ion-sensitive field-effect transistors (ISFETs) with a high signal-to-noise ratio. An ISFET is a pH sensing

• MEMS process flow. This means that the etched silicon structures have to be fabricated within a pre-defined area of the die with common semiconductor fabrication processes. These nanostructure templates are the basis for a further processing towards integrated functional systems. Results and Discussion

• The fabrication of the wafer-level integrated nanostructure templates is divided into two main parts, i.e., the formation of the noble metal nanoparticles, and the subsequent silicon wet etching process. The subsidiary process steps are standard semiconductor processes and therefore not analysed and

Impact of fluorination on interface energetics and growth of pentacene on Ag(111)

• Qi Wang,
• Meng-Ting Chen,
• Antoni Franco-Cañellas,
• Bin Shen,
• Thomas Geiger,
• Holger F. Bettinger,
• Frank Schreiber,
• Ingo Salzmann,
• Alexander Gerlach and
• Steffen Duhm

Beilstein J. Nanotechnol. 2020, 11, 1361–1370, doi:10.3762/bjnano.11.120

• ]. Fluorination is a viable way to change the ionization energies (IEs) of organic semiconductor thin films [4][5][6], which are an important parameter for energy level alignment [7][8]. Moreover, at organic–metal interfaces, fluorination is believed to decrease the coupling strength between the substrate and the