Superconducting spin valve effect in Co/Pb/Co heterostructures with insulating interlayers

• Andrey A. Kamashev,
• Nadir N. Garif’yanov,
• Aidar A. Validov,
• Vladislav Kataev,
• Alexander S. Osin,
• Yakov V. Fominov and
• Ilgiz A. Garifullin

Beilstein J. Nanotechnol. 2024, 15, 457–464, doi:10.3762/bjnano.15.41

• the magnetization of the Co1 layer. The layers were deposited using electron beam evaporation (Co, Pb) and AC sputtering (Si3N4). The deposition setup had a load-lock station with vacuum shutters, allowing one to transfer the sample holder without breaking the ultrahigh vacuum in the deposition

Investigating ripple pattern formation and damage profiles in Si and Ge induced by 100 keV Ar⁺ ion beam: a comparative study

• Indra Sulania,
• Harpreet Sondhi,
• Tanuj Kumar,
• Sunil Ojha,
• G R Umapathy,
• Ambuj Mishra,
• Ambuj Tripathi,
• Richa Krishna,
• Devesh Kumar Avasthi and
• Yogendra Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 367–375, doi:10.3762/bjnano.15.33

• structures. Although these structures may not be visible to the naked eye, they certainly have a visible impact on the mentioned applications. Nanopatterning is a very delicate procedure that is only possible with special techniques such as ion beam sputtering (IBS), with which one can achieve nanostructures

• understood. Despite controlled fabrication of patterns has been achieved, details that influence the process of self-assembly still remain open. Ion beam sputtering is an important method for inducing topographical changes in specific materials. For silicon, self-organized dots, ripples, and cones have been

• to knock them out of the surfaces through an outwardly directed momentum. This process is known as sputtering [26], and the number of ejected atoms per ion is given by the sputtering yield, Y(θ). It is clearly visible that Y is a function of the incident angle θ, and it maximizes around θ ≈ 60°. Ion

Controllable physicochemical properties of WO_x thin films grown under glancing angle

• Rupam Mandal,
• Aparajita Mandal,
• Alapan Dutta,
• Rengasamy Sivakumar,
• Sanjeev Kumar Srivastava and
• Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

• sputtering for optoelectronic applications. A glancing angle of 87° is employed to grow films of different thicknesses, which are then exposed to post-growth annealing. Detailed local probe analyses in terms of morphology and work function of WOx films are carried out to investigate thickness-dependent

• structural, optical, and electrical properties of glancing angle-deposited NS-WOx thin films, where NS-WOx films of different thicknesses (6–60 nm) are prepared by rf sputtering and exposed to post-growth annealing at 673 K in vacuum (2 × 10−7 mbar). The role of increased oxygen vacancy concentration (OV) on

• thin films were deposited on ultrasonically cleaned p-Si (100) and soda lime glass substrates of 1 × 1 cm2 dimension using a rf magnetron sputtering setup (Excel Instruments). Trichloroethylene, propanol, acetone, and DI water were used to carry out ultrasonication of the substrates for removing

Ultrasensitive and ultrastretchable metal crack strain sensor based on helical polydimethylsiloxane

• Shangbi Chen,
• Dewen Liu,
• Weiwei Chen,
• Huajiang Chen,
• Jiawei Li and
• Jinfang Wang

Beilstein J. Nanotechnol. 2024, 15, 270–278, doi:10.3762/bjnano.15.25

• ion beam sputtering was obtained from Fuzhou Yingfei Xun Photoelectric Tech Co., Ltd, China; it possessed a density of 19.3 g·cm−3 and a conductivity of 4.52 × 107 S·m−1. Silver conductive adhesive, which was procured from Shenzhen Ausbond Co., LTD. (Guangdong, China), was employed to affix copper

• structured PDMS was initially cleansed through a 5 min Ar plasma sputtering and, subsequently, coated with a 10 nm thick Ti adhesion layer. After that, ion beam sputtering was utilized to deposit a 50 nm thick Au thin film onto the outer surface of the helically shaped PDMS. Then, a controlled pre-stretch

Design, fabrication, and characterization of kinetic-inductive force sensors for scanning probe applications

• August K. Roos,
• Ermes Scarano,
• Elisabet K. Arvidsson,
• Erik Holmgren and
• David B. Haviland

Beilstein J. Nanotechnol. 2024, 15, 242–255, doi:10.3762/bjnano.15.23

• with 600 nm low-stress (<100 MPa) Si-N films. The sensor chips are 1.6 mm by 3.4 mm, about the size of a standard AFM cantilever chip. The steps are as follows: (a) Superconducting film. We first deposit a 15 nm thick thin film of superconducting Nb60Ti40N by reactive co-sputtering from separate

Ion beam processing of DNA origami nanostructures

• Leo Sala,
• Agnes Zerolová,
• Violaine Vizcaino,
• Alain Mery,
• Alicja Domaracka,
• Hermann Rothard,
• Philippe Boduch,
• Dominik Pinkas and
• Jaroslav Kocišek

Beilstein J. Nanotechnol. 2024, 15, 207–214, doi:10.3762/bjnano.15.20

• by ion beams, modeling ion implantation, lithography, and sputtering conditions. Structural changes in 2D DNA origami nanostructures deposited on Si are analyzed using AFM imaging. The observed effects on DNA origami include structure height decrease or increase upon fast heavy ion irradiation in

Measurements of dichroic bow-tie antenna arrays with integrated cold-electron bolometers using YBCO oscillators

• Leonid S. Revin,
• Dmitry A. Pimanov,
• Alexander V. Chiginev,
• Anton V. Blagodatkin,
• Viktor O. Zbrozhek,
• Andrey V. Samartsev,
• Anastasia N. Orlova,
• Dmitry V. Masterov,
• Alexey E. Parafin,
• Victoria Yu. Safonova,
• Anna V. Gordeeva,
• Andrey L. Pankratov,
• Leonid S. Kuzmin,
• Anatolie S. Sidorenko,
• Silvia Masi and
• Paolo de Bernardis

Beilstein J. Nanotechnol. 2024, 15, 26–36, doi:10.3762/bjnano.15.3

• of 1.2 nm of Fe and 30 nm of Al on top; then, 60 nm of aluminum are deposited at an angle of 45°. Thus, we form a superconductor–normal metal (SN) Andreev contact. Subsequently, oxidation is carried out at a relatively high pressure (1–2 Torr) in the working chamber of the sputtering unit. The last

• based on high-temperature YBCO Josephson junctions [27][28][29]. Long junctions based on YBCO thin films were fabricated by the preliminary topology mask method [30][31]. Specifically, YBCO film was deposited on a 24° [001]-tilt Zr1−xYxO2 bicrystal substrate by magnetron sputtering with preliminary

TEM sample preparation of lithographically patterned permalloy nanostructures on silicon nitride membranes

• Joshua Williams,
• Michael I. Faley,
• Joseph Vimal Vas,
• Peng-Han Lu and
• Rafal E. Dunin-Borkowski

Beilstein J. Nanotechnol. 2024, 15, 1–12, doi:10.3762/bjnano.15.1

• magnetron sputtering through the resist aperture. We used DC magnetron sputtering in a pure Ar environment at a pressure of 1 Pa to deposit Py at room temperature. The effective permalloy target had a diameter of 8 mm. The sputtered material almost forms a parallel beam when it approaches the substrate at a

A combined gas-phase dissociative ionization, dissociative electron attachment and deposition study on the potential FEBID precursor [Au(CH₃)₂Cl]₂

• Elif Bilgilisoy,
• Ali Kamali,
• Thomas Xaver Gentner,
• Gerd Ballmann,
• Sjoerd Harder,
• Hans-Peter Steinrück,
• Hubertus Marbach and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2023, 14, 1178–1199, doi:10.3762/bjnano.14.98

A visible-light photodetector based on heterojunctions between CuO nanoparticles and ZnO nanorods

• Doan Nhat Giang,
• Nhat Minh Nguyen,
• Duc Anh Ngo,
• Thanh Trang Tran,
• Le Thai Duy,
• Cong Khanh Tran,
• Thi Thanh Van Tran,
• Phan Phuong Ha La and
• Vinh Quang Dang

Beilstein J. Nanotechnol. 2023, 14, 1018–1027, doi:10.3762/bjnano.14.84

• bonding between nanoparticles and nanorods. To fabricate the photodetector, CuO NPs/ZnO NRs were deposited on a glass substrate initially. Then, silver electrodes with a thickness of 100 nm were directly patterned on the glass substrate by a sputtering process using a shadow mask with 0.3 cm channel

Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

• Mathias Franz,
• Mahnaz Safian Jouzdani,
• Lysann Kaßner,
• Marcus Daniel,
• Frank Stahr and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2023, 14, 951–963, doi:10.3762/bjnano.14.78

• from VG Scienta using a fixed pass energy of 200 eV. The sample was pre-cleaned by argon sputtering for 2 min with 4.0 keV acceleration energy to remove surface adsorbents and contaminations. The data were analysed using MATPLOTLIB [27][28] and LMFIT [29]. The XPS spectra were corrected using the

Ultralow-energy amorphization of contaminated silicon samples investigated by molecular dynamics

• Grégoire R. N. Defoort-Levkov,
• Alan Bahm and
• Patrick Philipp

Beilstein J. Nanotechnol. 2023, 14, 834–849, doi:10.3762/bjnano.14.68

• contaminant, water, sputtered by ultralow-energy ion beams, ranging from 50 to 500 eV and covering the full range of incidence angles, using molecular dynamics simulations with the ReaxFF potential. We show that the expected sputtering yield trends are maintained down to the lowest sputtering yields. A region

• planned to reach down to 50 eV, which would be correspondingly surface sensitive, in the near future. In the two above cases, contaminations in the experimental chamber play an important role during the sputtering processes. Typical contaminations are (in the order of frequency) water, nitrogen, carbon

• will be based on methodologies developed in a previous paper [26], which focused on a silicon sample contaminated with a water layer, and in which we showed the influence of the contamination layer on the sputtering process. In the presence of water on the sample surface, we showed that while the

In situ magnesiothermic reduction synthesis of a Ge@C composite for high-performance lithium-ion batterie anodes

• Ha Tran Huu,
• Ngoc Phi Nguyen,
• Vuong Hoang Ngo,
• Huy Hoang Luc,
• Minh Kha Le,
• Minh Thu Nguyen,
• My Loan Phung Le,
• Hye Rim Kim,
• In Young Kim,
• Sung Jin Kim,
• Van Man Tran and
• Vien Vo

Beilstein J. Nanotechnol. 2023, 14, 751–761, doi:10.3762/bjnano.14.62

• preparation routes, such as sputtering deposition [20], wet-chemical reduction [21][22], thermal reduction [23], colloidal synthesis [24], and molten-salt synthesis [25], metallothermic, especially magnesiothermic reduction, has been widely applied in the synthesis of group-IV elements to control the

SERS performance of GaN/Ag substrates fabricated by Ag coating of GaN platforms

• Magdalena A. Zając,
• Bogusław Budner,
• Malwina Liszewska,
• Bartosz Bartosewicz,
• Łukasz Gutowski,
• Jan L. Weyher and
• Bartłomiej J. Jankiewicz

Beilstein J. Nanotechnol. 2023, 14, 552–564, doi:10.3762/bjnano.14.46

• substrates using pulsed laser deposition (PLD) and magnetron sputtering (MS) and their evaluation as potential substrates for surface-enhanced Raman spectroscopy (SERS) are reported. Ag layers of comparable thicknesses were deposited using PLD and MS on nanostructured GaN platforms. All fabricated SERS

• : GaN/Ag; magnetron sputtering; nanofabrication; pulsed laser deposition; SERS substrates; surface-enhanced Raman spectroscopy (SERS); Introduction Surface-enhanced Raman spectroscopy (SERS) is a highly sensitive and specific technique with multiplexing capabilities [1][2][3][4]. It is considered for

• [31], gene mutation identification [34][35], and investigations of the reactivity of organic monoradicals [36]. In our previous studies, nanostructured GaN platforms were coated with pure metals or alloys using magnetron sputtering (MS) in an argon atmosphere [28][29][30][31][32]. Until now, no other

Plasmonic nanotechnology for photothermal applications – an evaluation

• A. R. Indhu,
• L. Keerthana and
• Gnanaprakash Dharmalingam

Beilstein J. Nanotechnol. 2023, 14, 380–419, doi:10.3762/bjnano.14.33

A novel approach to pulsed laser deposition of platinum catalyst on carbon particles for use in polymer electrolyte membrane fuel cells

• Bogusław Budner,
• Wojciech Tokarz,
• Sławomir Dyjak,
• Andrzej Czerwiński,
• Bartosz Bartosewicz and
• Bartłomiej Jankiewicz

Beilstein J. Nanotechnol. 2023, 14, 190–204, doi:10.3762/bjnano.14.19

• [27]. Direct deposition of PtNPs can be attained by the use of various physical vapor deposition techniques such as magnetron sputtering [28], sputtering [29], e-beam evaporation [30], dual ion-beam assisted deposition [31], and pulsed laser deposition (PLD) [27][32][33]. Previously, PLD has been used

Antimicrobial and mechanical properties of functionalized textile by nanoarchitectured photoinduced Ag@polymer coating

• Jessica Plé,
• Marine Dabert,
• Helene Lecoq,
• Sophie Hellé,
• Lydie Ploux and
• Lavinia Balan

Beilstein J. Nanotechnol. 2023, 14, 95–109, doi:10.3762/bjnano.14.11

• investigated [26], with specific emphasis on AgNPs [27]. Textiles have been successfully functionalized with AgNPs using a variety of both physical and chemical deposition techniques [28]. To name a few, Mei et al. [29] used magnetic sputtering to deposit AgNPs onto polyimide textiles; OhadiFar et al. [30

Combining physical vapor deposition structuration with dealloying for the creation of a highly efficient SERS platform

• Adrien Chauvin,
• Walter Puglisi,
• Damien Thiry,
• Cristina Satriano,
• Rony Snyders and
• Carla Bittencourt

Beilstein J. Nanotechnol. 2023, 14, 83–94, doi:10.3762/bjnano.14.10

• complexity and the high cost of gold restrict its use in devices. Here, we report on a novel two-step approach that combines the deposition of a silver–aluminum thin film with dealloying to design and fabricate efficient SERS platforms. The magnetron sputtering technique was used for the deposition of the

• rhodamine B. Keywords: dealloying; magnetron sputtering; nanoporous thin film; nanostructuring; SERS; Introduction Pollutant residues are strictly regulated in most countries to ensure water and food safety. In this context, there is an increasing demand for pollutant analysis tools with practical and

• resulting signal intensity tends to strongly vary due to surface contamination [30]. In this paper, a simple synthesis method to design bimodal porous silver substrate for SERS is reported. Magnetron co-sputtering of a silver and aluminum target was used for the deposition of the precursor alloy thin film

The influence of structure and local structural defects on the magnetic properties of cobalt nanofilms

• Alexander Vakhrushev,
• Aleksey Fedotov,
• Olesya Severyukhina and
• Anatolie Sidorenko

Beilstein J. Nanotechnol. 2023, 14, 23–33, doi:10.3762/bjnano.14.3

• that are influenced and corrected in the manufacturing process). The previously conducted studies considered the influence of sample parameters (e.g., temperature of the substrate on which the magnetron sputtering of nanofilms takes place, the intensity and deposition direction) on the final properties

• dimensions as the ideal HCP structure in the first numerical experiment. A group of cobalt atoms with structural defects acquired as a result of film sputtering in an enlarged form is shown in Figure 3b. Henceforward, to simplify the formulation, the nanosystem of cobalt atoms from the numerical experiment

Electrical and optical enhancement of ITO/Mo bilayer thin films via laser annealing

• Abdelbaki Hacini,
• Ahmad Hadi Ali,
• Nurul Nadia Adnan and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2022, 13, 1589–1595, doi:10.3762/bjnano.13.133

• . Experimental IM bilayer thin films were sputtered on n-type silicon(111) substrates for structural, morphological, and electrical characterization. In addition, the bilayer thin films were deposited on glass substrates for optical characterization. This process was performed using RF magnetron sputtering

• (Quorum Q300T D) at 10−4 mbar pressure. The magnetron sputter contains a double target with high purity (approx. 99.99%). The first target is for sputtering ITO (90 wt % In2O3 and 10 wt % SnO2), and the second target is for sputtering Mo. Before deposition, the Si and the glass samples were cut into

• sputtering and, subsequently, investigated. The films were annealed using a Nd:YAG pulsed laser with different energies. The inclusion of thin Mo films and annealing at 120 mJ improved the structural, morphological, optical, and electrical properties. The XRD results show a good crystallinity for the

Observation of collective excitation of surface plasmon resonances in large Josephson junction arrays

• Roger Cattaneo,
• Mikhail A. Galin and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2022, 13, 1578–1588, doi:10.3762/bjnano.13.132

• interjunction interaction. Samples We study arrays of Nb/NbxSi1−x/Nb JJs fabricated on oxidized Si substrates and connected in series by Nb electrodes. The NbxSi1−x interlayer with the composition x ≃ 0.14 was deposited by co-sputtering from Nb and Si sources. Details about the fabrication procedure can be

Microneedle-based ocular drug delivery systems – recent advances and challenges

• Piotr Gadziński,
• Anna Froelich,
• Monika Wojtyłko,
• Antoni Białek,
• Julia Krysztofiak and
• Tomasz Osmałek

Beilstein J. Nanotechnol. 2022, 13, 1167–1184, doi:10.3762/bjnano.13.98

• photoresistant layer. The wafer is then etched. A distinction can be made between wet and dry etching. The wet etching process uses a potassium hydroxide solution, while dry etching includes the physical methods ion milling and sputtering and the chemical method high-pressure plasma [156]. Lithographic

Effects of focused electron beam irradiation parameters on direct nanostructure formation on Ag surfaces

• Jānis Sniķeris,
• Vjačeslavs Gerbreders,
• Andrejs Bulanovs and
• Ēriks Sļedevskis

Beilstein J. Nanotechnol. 2022, 13, 1004–1010, doi:10.3762/bjnano.13.87

• surfaces undergoing irradiation by a focused electron beam. Keywords: atomic force microscopy; electron beam; lithography; nanostructure; silver; sputtering; surface; Introduction Metallic nanostructures have various uses, including in nano-electro-mechanical systems [1], plasmonic biosensors [2], and

• parameters (beam current, focusing, angle of incidence, and amount of hydrocarbons) affects the growth of nanostructures on Ag surfaces undergoing irradiation by focused EB in point mode. Experimental The samples were prepared by sputtering 500 nm thick Ag layers on Si(111) substrates via direct current (DC

• ) magnetron sputtering. The samples were fixed to the SEM stub with colloidal Ag paint. The surface of the samples was irradiated with a focused EB with controlled parameters in point mode using a Tescan MAIA3 SEM (Figure 1a). Several samples were irradiated, each time one of the irradiation parameters was

Influence of water contamination on the sputtering of silicon with low-energy argon ions investigated by molecular dynamics simulations

• Grégoire R. N. Defoort-Levkov,
• Alan Bahm and
• Patrick Philipp

Beilstein J. Nanotechnol. 2022, 13, 986–1003, doi:10.3762/bjnano.13.86

• by molecular dynamics (MD) simulations how one of the most commonly found residual contaminations in vacuum chambers (i.e., water adsorbed on a silicon surface) influences sputtering by 100 eV argon ions. The incidence angle was changed from normal incidence to close to grazing incidence. For the

• simulation conditions used in this work, the adsorption of water favours the formation of defects in silicon by mixing hydrogen and oxygen atoms into the substrate. The sputtering yield of silicon is not significantly changed by the contamination, but the fraction of hydrogen and oxygen atoms that is

• depth. Investigations performed with low-energy argon ions [15][19][20] have shown that the current model describing the sputter yields and the sputtering processes (such as sputtering threshold and the amorphization process) does not fit with experimental data, leading to discrepancies that cannot be

Temperature and chemical effects on the interfacial energy between a Ga–In–Sn eutectic liquid alloy and nanoscopic asperities

• Yujin Han,
• Pierre-Marie Thebault,
• Corentin Audes,
• Xuelin Wang,
• Haiwoong Park,
• Jian-Zhong Jiang and
• Arnaud Caron

Beilstein J. Nanotechnol. 2022, 13, 817–827, doi:10.3762/bjnano.13.72

• 1s orbital of carbon. We attribute these contributions (CO32−, C–C/C–H, and C–O) to contamination from the ambient. As mentioned above, we performed the XPS measurements on these liquid samples without prior Ar+-ion sputtering or further heating inside the vacuum chamber of the XPS instrument. Given