Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS₂ thin films with domains much smaller than the laser spot size

• Felipe Wasem Klein,
• Jean-Roch Huntzinger,
• Vincent Astié,
• Damien Voiry,
• Romain Parret,
• Houssine Makhlouf,
• Sandrine Juillaguet,
• Jean-Manuel Decams,
• Sylvie Contreras,
• Périne Landois,
• Ahmed-Azmi Zahab,
• Jean-Louis Sauvajol and
• Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

• X–M–X or MX2 triatomic layer, where X is a chalcogen atom (e.g., sulfur, selenium, or tellurium) and M is a transition metal atom (e.g., molybdenum or tungsten) [10]. Among the layered TMD materials, molybdenum disulfide, MoS2, is of particular interest in optoelectronic applications because of its

Plasmonic nanotechnology for photothermal applications – an evaluation

• A. R. Indhu,
• L. Keerthana and
• Gnanaprakash Dharmalingam

Beilstein J. Nanotechnol. 2023, 14, 380–419, doi:10.3762/bjnano.14.33

Enhanced electronic transport properties of Te roll-like nanostructures

• E. R. Viana,
• N. Cifuentes and
• J. C. González

Beilstein J. Nanotechnol. 2022, 13, 1284–1291, doi:10.3762/bjnano.13.106

• by a facile synthesis and extensively studied by scanning and transmission electron microscopy. The nanostructures are made of pure and crystalline Tellurium with trigonal structure (t-Te), and exhibit p-type conductivity with enhanced field-effect hole mobility between 273 cm2/Vs at 320 K and 881

• electrical properties of these nanostructures, with a small disorder, and superior quality for nanodevice applications. Keywords: electrical characterization; field-effect transistors; hopping conduction; nanobelts; tellurium; Introduction The chalcogen tellurium (Te) is a rare element (0.002 ppm) in the

• Earth’s crust and a well-known p-type and narrow-bandgap (≈0.35 eV at room temperature) semiconductor material. Tellurium is widely used in thermoelectric devices, piezoelectric devices, photoconductive devices, gas sensing, nonlinear optical devices, solar cells, photonic crystals, holographic recording

Plasmon-enhanced photoluminescence from TiO₂ and TeO₂ thin films doped by Eu³⁺ for optoelectronic applications

• Marcin Łapiński,
• Jakub Czubek,
• Katarzyna Drozdowska,
• Anna Synak,
• Wojciech Sadowski and
• Barbara Kościelska

Beilstein J. Nanotechnol. 2021, 12, 1271–1278, doi:10.3762/bjnano.12.94

• luminescence properties of europium-doped titanium dioxide and tellurium oxide thin films enhanced by gold plasmonic nanostructures. We propose a new type of plasmon structure with an ultrathin dielectric film between plasmonic platform and luminescent material. Plasmonic platforms were manufactured through

• popular and widely used oxide material as matrix for rare-earth ions [9][10][11][12][13]. Tellurium dioxide can be also considered as excellent in hosting rare-earth ions because of its low phonon energy (ca. 700–800 cm−1), which allows to minimize non-radiative losses [14][15][16]. Modification of oxide

• ) transitions (intra-configurational 4f transitions), observed in the range of 570–840 nm [21][22][23]. As a red light emitter, Eu3+ may be employed in various optical devices. In this work we compare two types of matrix for europium ions, namely titanium dioxide and tellurium dioxide. We show possibilities to

Gas-sensing features of nanostructured tellurium thin films

• Dumitru Tsiulyanu

Beilstein J. Nanotechnol. 2020, 11, 1010–1018, doi:10.3762/bjnano.11.85

• Dumitru Tsiulyanu CIMAN Research Centre of Department of Physics, Technical University, bul. Dacia 41, MD-2060 Chisinau, Moldova 10.3762/bjnano.11.85 Abstract Nanocrystalline and amorphous nanostructured tellurium (Te) thin films were grown and their gas-sensing properties were investigated at

• were interpreted in terms of an increase in disorder (amorphization), leading to an increase in the surface chemical activity of chalcogenides, as well as an increase in the active surface area due to substrate porosity. Keywords: gas-sensing properties; NO2; tellurium thin films; nanocrystalline

• films; Introduction Tellurium (Te) is a multifunctional chemical element used for the development of many devices, such as diodes with high (106) rectification ratios, thin-film field-effect transistors, optical recording media, infrared and UV detectors, strain-sensitive devices and others (see [1][2

Remarkable electronic and optical anisotropy of layered 1T’-WTe₂ 2D materials

• Qiankun Zhang,
• Rongjie Zhang,
• Jiancui Chen,
• Wanfu Shen,
• Chunhua An,
• Xiaodong Hu,
• Mingli Dong,
• Jing Liu and
• Lianqing Zhu

Beilstein J. Nanotechnol. 2019, 10, 1745–1753, doi:10.3762/bjnano.10.170

• . Brown spheres: tellurium atoms, blue spheres: tungsten atoms. b) XPS spectrum of W 4f (green line) and Te 3d (red line) peaks. c) TEM image and SEAD pattern of WTe2, revealing the crystal structure of the 1T’ phase, with lattice parameters a ≈ 3.49 Å and b ≈ 6.32 Å, respectively. d) Raman spectrum of a

Interaction of Te and Se interlayers with Ag or Au nanofilms in sandwich structures

• Arkadiusz Ciesielski,
• Lukasz Skowronski,
• Marek Trzcinski,
• Ewa Górecka,
• Wojciech Pacuski and
• Tomasz Szoplik

Beilstein J. Nanotechnol. 2019, 10, 238–246, doi:10.3762/bjnano.10.22

• the crystallinity, atomic concentration profile and optical parameters of ≈35 nm-thick silver and gold layers deposited on glass substrates with 2 nm-thick tellurium or selenium interlayers. Our study, based on X-ray reflectometry (XRR), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS

• ) and ellipsometric measurements, showed that using either of these interlayers introduces strain in nanocrystals of both plasmonic films. This, in turn, influences the migration of Se and Te into the metal layers. Selenium atoms migrate both in the silver and gold nanolayers, while tellurium atoms

• the nano-alloy formation, but more likely due to the microstrain on metal grains. Keywords: diffusion; gold; microstrain; nanocrystallinity; permittivity; plasmonics; segregation; selenium; silver; tellurium; Introduction In recent years, there has been growing interest in layered, sandwich-like

Two-dimensional silicon and carbon monochalcogenides with the structure of phosphorene

• Dario Rocca,
• Ali Abboud,
• Ganapathy Vaitheeswaran and
• Sébastien Lebègue

Beilstein J. Nanotechnol. 2017, 8, 1338–1344, doi:10.3762/bjnano.8.135

• atoms in the experimental structure of phosphorene with carbon (or silicon) and chalcogen atoms (up to tellurium) by preserving the number of valence electrons involved in each bond. This starting geometry was then optimized at the PBE level of theory [36]. We found the CO monolayer to be unstable and

Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering

• Sergei N. Chebotarev,
• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Elena N. Zhivotova,
• Georgy A. Erimeev and
• Marina L. Lunina

Beilstein J. Nanotechnol. 2017, 8, 12–20, doi:10.3762/bjnano.8.2

• change the evaporation cosine law. A SnTe solid-state source was used as a dopant. This compound was already used earlier [31][32]. In our case, the usage of elementary tellurium is unacceptable because of its high vapor pressure. The vapor flux from the SnTe source was calibrated in the temperature

Facile fabrication of luminescent organic dots by thermolysis of citric acid in urea melt, and their use for cell staining and polyelectrolyte microcapsule labelling

• Nadezhda M. Zholobak,
• Anton L. Popov,
• Alexander B. Shcherbakov,
• Nelly R. Popova,
• Mykhailo M. Guzyk,
• Valeriy P. Antonovich,
• Alla V. Yegorova,
• Yuliya V. Scrypynets,
• Inna I. Leonenko,
• Alexander Ye. Baranchikov and
• Vladimir K. Ivanov

Beilstein J. Nanotechnol. 2016, 7, 1905–1917, doi:10.3762/bjnano.7.182

• crystals (quantum dots, Q-dots) are a good alternative to common fluorescent dyes in a variety of biomedical applications, mainly due to their high photostability and relatively large Stokes shift [1][2][3], but Q-dots typically contain heavy metals (lead, cadmium) and chalcogens (selenium, tellurium

Electrical properties of single CdTe nanowires

• Elena Matei,
• Camelia Florica,
• Andreea Costas,
• María Eugenia Toimil-Molares and
• Ionut Enculescu

Beilstein J. Nanotechnol. 2015, 6, 444–450, doi:10.3762/bjnano.6.45

• employed as an electrochemical cell, and a deposition temperature of 80 °C was maintained by means of an external water circulator. The deposition bath contained CdSO4 and TeO2 as the sources of the two ions. The pH was adjusted to 2 using sulfuric acid and sodium hydroxide. Higher pHs led to tellurium

Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

• Jacques Perrin Toinin,
• Alain Portavoce,
• Khalid Hoummada,
• Michaël Texier,
• Maxime Bertoglio,
• Sandrine Bernardini,
• Marco Abbarchi and
• Lee Chow

Beilstein J. Nanotechnol. 2015, 6, 336–342, doi:10.3762/bjnano.6.32

• semiconductor. In the present work, the impact of high dose selenium and tellurium (3.5 × 1015 atoms/cm2) implantations on the morphology of polycrystalline Ge thin films is presented, as well as the evolution of the film morphology with thermal annealing conditions (temperature and time). Results and

The distribution and degradation of radiolabeled superparamagnetic iron oxide nanoparticles and quantum dots in mice

• Denise Bargheer,
• Artur Giemsa,
• Barbara Freund,
• Markus Heine,
• Christian Waurisch,
• Gordon M. Stachowski,
• Stephen G. Hickey,
• Alexander Eychmüller,
• Jörg Heeren and
• Peter Nielsen

Beilstein J. Nanotechnol. 2015, 6, 111–123, doi:10.3762/bjnano.6.11

• include the absorption of intact micelles into enterocytes [31]. 65Zn-labeling of quantum dots For intrinsic labeling, a variety of radionuclides can be incorporated into quantum dots consisting of cadmium, copper, indium, zinc, selenium, and tellurium. Although cadmium is the most relevant, it has no

Two-dimensional and tubular structures of misfit compounds: Structural and electronic properties

• Tommy Lorenz,
• Jan-Ole Joswig and
• Gotthard Seifert

Beilstein J. Nanotechnol. 2014, 5, 2171–2178, doi:10.3762/bjnano.5.226

• )1.00MoSe2, and (SnSe)1.03MoSe2 [5][6][7][8], and misfit layer compounds consisting of other elements such as tellurium [9] or lanthanides [10] have been synthesized. Although some misfit compounds occur naturally [1][11], the recent developments in the synthesis, exfoliation, and handling of layered, two

Review of nanostructured devices for thermoelectric applications

• Giovanni Pennelli

Beilstein J. Nanotechnol. 2014, 5, 1268–1284, doi:10.3762/bjnano.5.141

• , in the following sections the Z parameter will be considered for comparing TE materials. Many tellurium compounds showed interesting TE potentialities. The most widely used material for thermoelectricity, extensively studied since 1954 [19][20][21], is Bi2Te3. It is a narrow gap (about 160 mV at 300

• be obtained by ternary alloys based on bismuth/tellurium and antimony (typically p-doped) or selenium (typically n-doped) [22][23][24][25]. Values of the Z factor in excess of 4.5 × 10−3 K−1 (ZT in excess of 1.4) at room temperature have been found. A further increase of the Z factor has been

• large temperature differences, so that they can pursue higher efficiencies with respect to other tellurium based materials. Nanocrystalline PbTe compounds [29][30] showed an increment of the Z factor in excess of 2 × 10−3 K−1, still maintaining a large temperature range. Even if all these TE

Optical and structural characterization of oleic acid-stabilized CdTe nanocrystals for solution thin film processing

• Claudio Davet Gutiérrez-Lazos,
• Mauricio Ortega-López,
• Manuel A. Pérez-Guzmán,
• A. Mauricio Espinoza-Rivas,
• Francisco Solís-Pomar,
• Rebeca Ortega-Amaya,
• L. Gerardo Silva-Vidaurri,
• Virginia C. Castro-Peña and
• Eduardo Pérez-Tijerina

Beilstein J. Nanotechnol. 2014, 5, 881–886, doi:10.3762/bjnano.5.100

• (the tellurium reducing agent). The Raman spectrum exhibits two broad bands centered at 141.6 and 162.3 cm−1, which could be associated to the TO and LO modes of cubic CdTe nanocrystals, respectively. Additional peaks located in the 222 to 324 cm−1 range, agree fairly well with the wavenumbers reported

• enabled us to manipulate the CdTe nanocrystals under ambient conditions, and to use them to deposit CdTe thin films that were free of cadmium tellurate or tellurium oxide. The CdTe nanocrystals and thin films were characterized by TEM, X-ray diffraction, UV–vis spectroscopy and Raman spectroscopy. Results

• concentration, TOP concentration lower than 2.24 mmol produced free Cd3P2 CdTe colloids. Experimental Materials: cadmium oxide powder ≈1 μm (CdO, 99.5% Aldrich); tellurium powder (200 mesh 99.8% Aldrich); oleic acid (OA, technical grade 90% Aldrich); n-trioctylphosphine (TOP, technical grade 90% Aldrich); 1

One-step synthesis of high quality kesterite Cu₂ZnSnS₄ nanocrystals – a hydrothermal approach

• Vincent Tiing Tiong,
• John Bell and
• Hongxia Wang

Beilstein J. Nanotechnol. 2014, 5, 438–446, doi:10.3762/bjnano.5.51

• to overcome the key issues in the current PV technologies: the high production cost of silicon wafer used in the first generation solar cells and the limited availability of raw materials such as tellurium and indium used in CdTe and Cu(Ga, In)Se2 (CIGS) based thin film solar cells, which has raised

Characterization and properties of micro- and nanowires of controlled size, composition, and geometry fabricated by electrodeposition and ion-track technology

• Maria Eugenia Toimil-Molares

Beilstein J. Nanotechnol. 2012, 3, 860–883, doi:10.3762/bjnano.3.97

• consisting of cadmium sulfate (0.02 M) and tellurium dioxide (1 mM) as sources of cadmium and tellurium ions, respectively, was described by Matei et al. [98]. The tellurium dioxide was dissolved in 50% concentrated sulfuric acid and the overall pH was adjusted to 2 with sodium hydroxide