Natural nanofibers embedded in the seed mucilage envelope: composite hydrogels with specific adhesive and frictional properties

• Agnieszka Kreitschitz and
• Stanislav N. Gorb

Beilstein J. Nanotechnol. 2024, 15, 1603–1618, doi:10.3762/bjnano.15.126

• atomic force microscopy (AFM), transmission electron microscopy (TEM), SEM, or cryo-SEM [45][57][63][64][65][66]. Very often, the procedures for preparing mucilage envelope samples can destroy and/or influence the organisation of polysaccharides, making the analysis of spatial structure of the mucilage

• impossible. The complicated preparation procedures and analysis give us often an information limited to just one factor, for example, to specific chemical composition or topology (AFM, FTIR, or Raman microscopy) [45]. Ideally, the comparison of data from diverse visualisation techniques can provide us with

Strain-induced bandgap engineering in 2D ψ-graphene materials: a first-principles study

• Kamal Kumar,
• Nora H. de Leeuw,
• Jost Adam and
• Abhishek Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 1440–1452, doi:10.3762/bjnano.15.116

• graphene to a piezoelectric substrate, by shrinking or elongating the substrate by applying a bias voltage, or by using the tip of an atomic force microscope (AFM) to push graphene over a hole created in the substrate [29]. A wealth of literature on strain engineering of graphene and other 2D materials

A biomimetic approach towards a universal slippery liquid infused surface coating

• Ryan A. Faase,
• Madeleine H. Hummel,
• AnneMarie V. Hasbrook,
• Andrew P. Carpenter and
• Joe E. Baio

Beilstein J. Nanotechnol. 2024, 15, 1376–1389, doi:10.3762/bjnano.15.111

• force microscopy (AFM), sum frequency generation spectroscopy (SFG), and X-ray photoelectron spectroscopy (XPS). Measuring static water contact angles is a straightforward method to determine the relative wettability of a material and allows for a quick check if our surface modifications were successful

• with a fluid similar to blood [24]. AFM is a technique that provides topographical information through a nanoscale probe [25]. After each successive layer of the coating the topography of the surface will change and can be measured via AFM. SFG is a surface-sensitive non-linear spectroscopic technique

• measurements were conducted with the sessile drop method. Droplets of 5 µL were pipetted onto the surface, and an image was captured. Eight images from two duplicates of each sample type were acquired on a smartphone device and processed in ImageJ (NIH). Atomic force microscopy AFM was conducted on a Veeco di

Interaction of graphene oxide with tannic acid: computational modeling and toxicity mitigation in C. elegans

• Romana Petry,
• James M. de Almeida,
• Francine Côa,
• Felipe Crasto de Lima,
• Diego Stéfani T. Martinez and
• Adalberto Fazzio

Beilstein J. Nanotechnol. 2024, 15, 1297–1311, doi:10.3762/bjnano.15.105

• complete characterization of the GO sample is available in [36]. Atomic force microscopy (AFM), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS) were used to assess size, morphology, number of layers, and surface chemistry of GO. The GO sample used in this study consists of single layers with

• Agency (EPA), herein named EPA medium, in absence and presence of TA. Atomic force microscopy AFM has been extensively used to characterize the distribution and morphology of biomolecules on the surface of nanomaterials, especially 2D materials [37]. Figure 1a and Figure 1b show AFM images of GO sheets

• possible to identify interactions between these groups and GO’s carbon structure and between carbon atoms of both structures. Furthermore, we analyzed the maximum heights of TA-plus-GO conformations among the snapshots. The values range from 1.5 to 3.0 nm, which corroborates with AFM topography results and

New design of operational MEMS bridges for measurements of properties of FEBID-based nanostructures

• Bartosz Pruchnik,
• Krzysztof Kwoka,
• Ewelina Gacka,
• Dominik Badura,
• Piotr Kunicki,
• Andrzej Sierakowski,
• Paweł Janus,
• Tomasz Piasecki and
• Teodor Gotszalk

Beilstein J. Nanotechnol. 2024, 15, 1273–1282, doi:10.3762/bjnano.15.103

• spectral analysis of vibrations [49]. The thermomechanical noise analysis approximates the bridge as a simple harmonic oscillator with one DOF, as has been used for determining the spring constant of AFM cantilevers [50]. This approach provides an approximation for the stiffness k in terms of the measured

The role of a tantalum interlayer in enhancing the properties of Fe₃O₄ thin films

• Hai Dang Ngo,
• Vo Doan Thanh Truong,
• Van Qui Le,
• Hoai Phuong Pham and
• Thi Kim Hang Pham

Beilstein J. Nanotechnol. 2024, 15, 1253–1259, doi:10.3762/bjnano.15.101

• films on three different types of substrates, namely an amorphous SiO2/Si(100) substrate, a single crystal MgO(100) substrate, and a buffer layer consisting of MgO/Ta/SiO2/Si(100). The properties of Fe3O4 thin films were analyzed using atomic force microscopy (AFM), X-ray diffractometry (XRD), and

• indicates the potential to facilitate the development of novel magnetic and spintronic architectures. Results and Discussion AFM and line-cut method were used to examine the surface morphology and grain sizes of the Fe3O4 films that were formed on SiO2/Si(100), MgO(100), and MgO/Ta/SiO2/Si(100) multilayer

• Design magnetic property measurement system, MPMS-5XL), and X-ray diffractometry (Bruker Discover D8), respectively. AFM images (1 × 1 µm2) of Fe3O4 thin films on different substrates. (a) SiO2, (b) MgO(100), and (c) MgO/Ta/SiO2. XRD spectra of sample 1 (black), sample 2 (red), and sample 3 (blue) on

Local work function on graphene nanoribbons

• Daniel Rothhardt,
• Amina Kimouche,
• Tillmann Klamroth and
• Regina Hoffmann-Vogel

Beilstein J. Nanotechnol. 2024, 15, 1125–1131, doi:10.3762/bjnano.15.91

• properties in nanoelectronics. (a) Topography image of GNRs on Au, measured with a Si tip, f0 = 170.91 kHz, cL = 40 N/m, A = 1 nm, Q = 20,000, and Δf = −21 Hz. (b) In KPFM, local variations in contact potential (CPD) can be measured by applying a voltage between the sample and the AFM tip so that the

Unveiling the potential of alginate-based nanomaterials in sensing technology and smart delivery applications

• Shakhzodjon Uzokboev,
• Khojimukhammad Akhmadbekov,
• Ra’no Nuritdinova,
• Salah M. Tawfik and
• Yong-Ill Lee

Beilstein J. Nanotechnol. 2024, 15, 1077–1104, doi:10.3762/bjnano.15.88

• wall [60]. Another important morphological feature of polymers is the surface of the polymers, and atomic force microscopy (AFM) can be utilized to detect surface features of polymeric nanoparticles. It is very useful tool that offers high-resolution images in three dimensions at the nanometer scale

• [61]. Nanoparticle size: The nanoparticle size can be determined using a variety of methods including dynamic (DLS) and static (SLS) light scattering; TEM, SEM, and AFM are also widely employed [62][63]. DLS and SLS can detect particle size by determining changes in distribution of particle size

Signal generation in dynamic interferometric displacement detection

• Knarik Khachatryan,
• Simon Anter,
• Michael Reichling and
• Alexander von Schmidsfeld

Beilstein J. Nanotechnol. 2024, 15, 1070–1076, doi:10.3762/bjnano.15.87

• . In a non-contact atomic force microscope (NC-AFM), it facilitates the force measurement by recording the periodic displacement of an oscillating microcantilever. To understand signal generation in a NC-AFM-based Michelson-type interferometer, we evaluate the non-linear response of the interferometer

• . Keywords: amplitude calibration; displacement detection; force microscopy; interferometer signal; NC-AFM; Introduction Optical interferometry is a reliable technique utilizing light waves to measure distance and displacement with high precision [1][2]. With the light wavelength as the length standard, a

• highly stable interferometer can detect displacements with an accuracy far beyond nanometer resolution [3], where the final physical limit is set by the photon emission statistics of the light source [4]. In non-contact atomic force microscopy (NC-AFM), interferometry is used to measure the periodic

Exploring surface charge dynamics: implications for AFM height measurements in 2D materials

• Mario Navarro-Rodriguez,
• Andres M. Somoza and
• Elisa Palacios-Lidon

Beilstein J. Nanotechnol. 2024, 15, 767–780, doi:10.3762/bjnano.15.64

• microscopy (AFM) techniques emerge as ideal tools to investigate them [26][27]. Depending on the operation mode and under controlled environmental conditions, AFM offers the possibility to record morphology along with relevant electronic, mechanical, or magnetic properties with nanoscale resolution. In

• addition, it can be integrated with classical optical spectroscopy methods such as Raman and fluorescence [20][28][29], enabling a multidimensional characterization approach. A well-recognized issue within the AFM community is the inaccurate height determination derived from topography images on

• heterogeneous samples. This discrepancy arises from various sources depending on the operation mode and working parameters. In the frequency modulation mode (FM-AFM), a non-compensated bias voltage between tip and sample, from differences in the surface potential (SP), results in inaccurate height measurements

Effect of repeating hydrothermal growth processes and rapid thermal annealing on CuO thin film properties

• Monika Ozga,
• Eunika Zielony,
• Aleksandra Wierzbicka,
• Anna Wolska,
• Marcin Klepka,
• Marek Godlewski,
• Bogdan J. Kowalski and
• Bartłomiej S. Witkowski

Beilstein J. Nanotechnol. 2024, 15, 743–754, doi:10.3762/bjnano.15.62

• , which allowed for the investigation of both topography and electrical properties of the films. Surface topography analysis was performed by utilizing an atomic force microscopy (AFM) operating in Peak Force Tapping mode. The surface was scanned at a resolution of 1024 × 1024 measurement points using a

• effect [49][50]. Despite the measurement conditions, it was still possible to qualitatively analyze changes in surface potential and work function based on the sample preparation method. The AFM, SCM, and KPFM data were analyzed using the Nanoscope Analysis 3.0 software (Bruker). The CuO films also

• cycle one, two, and three times was conducted using SEM and AFM. Figure 3 shows representative images of the surface and height profiles (where 0 corresponds to the mean plane) acquired along the marked lines from the AFM scans of the analyzed samples. The measured parameters are compiled in Table 2

Elastic modulus of β-Ga₂O₃ nanowires measured by resonance and three-point bending techniques

• Annamarija Trausa,
• Sven Oras,
• Sergei Vlassov,
• Mikk Antsov,
• Tauno Tiirats,
• Andreas Kyritsakis,
• Boris Polyakov and
• Edgars Butanovs

Beilstein J. Nanotechnol. 2024, 15, 704–712, doi:10.3762/bjnano.15.58

• for studying the mechanical properties of NWs, such as nanoindentation [15], three-point bending tests using an atomic force microscope (AFM) [16], and in-situ scanning electron microscope (SEM) resonance [17]. However, challenges of obtaining consistent and comparable elastic modulus values across

• the length and width of NWs for three-point bending were measured in SEM, the heights were taken from the topography data obtained by AFM in the adhered parts of the NW at each end. In Figure 5a, an SEM image captures the morphology of a Ga2O3 NW positioned over an inverted pyramid structure. Notably

• , both ends of the NW are fixed, laying the foundation for a controlled three-point bending experiment. Figure 5b presents the AFM topography of the Ga2O3 NW. The loading and unloading spectra, illustrating one instance of the three-point bending test, is shown in Figure 5c. Since the elastic modulus

Enhancing higher-order modal response in multifrequency atomic force microscopy with a coupled cantilever system

• Wendong Sun,
• Jianqiang Qian,
• Yingzi Li,
• Yanan Chen,
• Zhipeng Dou,
• Rui Lin,
• Peng Cheng,
• Xiaodong Gao,
• Quan Yuan and
• Yifan Hu

Beilstein J. Nanotechnol. 2024, 15, 694–703, doi:10.3762/bjnano.15.57

• , Chinese Academy of Sciences, Dalian 116023, P. R. China 10.3762/bjnano.15.57 Abstract Multifrequency atomic force microscopy (AFM) utilizes the multimode operation of cantilevers to achieve rapid high-resolution imaging and extract multiple properties. However, the higher-order modal response of

• traditional rectangular cantilever is weaker in air, which affects the sensitivity of multifrequency AFM detection. To address this issue, we previously proposed a bridge/cantilever coupled system model to enhance the higher-order modal response of the cantilever. This model is simpler and less costly than

• , including increasing the modal frequency of the original cantilever and generating additional resonance peaks, demonstrating the significant potential of the coupled system in various fields of AFM. Keywords: atomic force microscopy; coupled system; higher-order modes; macroscale; multifrequency AFM

Gold nanomakura: nanoarchitectonics and their photothermal response in association with carrageenan hydrogels

• Nabojit Das,
• Vikas,
• Akash Kumar,
• Sanjeev Soni and
• Raja Gopal Rayavarapu

Beilstein J. Nanotechnol. 2024, 15, 678–693, doi:10.3762/bjnano.15.56

• microscopy (AFM) micrographs of CTAB-AuNM, MTAB-AuNM, and DTAB-AuNM, respectively. A total number of 50 nanoparticles were considered for the aspect ratio measurement as shown in Table 2. The analysis was performed using the ImageJ software (NIH, USA). Figure 4d–f shows AFM images of the AuNMs along with

• using TEM and AFM. Figure 4a–c showed TEM images of nanoparticles confirming the nanomakura shape. However, it was interesting to notice that the nanomakura shape is more pronounced in DTAB-AuNM. This was also confirmed using AFM considering the AuNMs under a three-dimensional view. Furthermore, 3D

• images were captured using AFM as shown in Figure 4d–f confirming the topography of AuNMs. Therefore, it was clearly observed from the complementing results obtained through TEM and AFM that the shape of the nanoparticles is makura. It can be assumed that the breaking of nanorod-shape symmetry into a

AFM-IR investigation of thin PECVD SiO_x films on a polypropylene substrate in the surface-sensitive mode

• Hendrik Müller,
• Hartmut Stadler,
• Teresa de los Arcos,
• Adrian Keller and
• Guido Grundmeier

Beilstein J. Nanotechnol. 2024, 15, 603–611, doi:10.3762/bjnano.15.51

• /bjnano.15.51 Abstract Thin silicon oxide films deposited on a polypropylene substrate by plasma-enhanced chemical vapor deposition were investigated using atomic force microscopy-based infrared (AFM-IR) nanospectroscopy in contact and surface-sensitive mode. The focus of this work is the comparison of

• the different measurement methods (i.e., contact mode and surface-sensitive mode) with respect to the chemical surface sensitivity. The use of the surface-sensitive mode in AFM-IR shows an enormous improvement for the analysis of thin films on the IR-active substrate. As a result, in this mode, the

• signal of the substrate material could be significantly reduced. Even layers that are so thin that they could hardly be measured in the contact mode can be analyzed with the surface-sensitive mode. Keywords: AFM-IR; polypropylene; surface-sensitive mode; silicon oxide; thin films; XPS; Introduction

Stiffness calibration of qPlus sensors at low temperature through thermal noise measurements

• Laurent Nony,
• Sylvain Clair,
• Daniel Uehli,
• Aitziber Herrero,
• Jean-Marc Themlin,
• Andrea Campos,
• Franck Para,
• Alessandro Pioda and
• Christian Loppacher

Beilstein J. Nanotechnol. 2024, 15, 580–602, doi:10.3762/bjnano.15.50

• University, CNRS, Centrale Marseille, FSCM (FR1739), CP2M, 13397 Marseille, France 10.3762/bjnano.15.50 Abstract Non-contact atomic force microscopy (nc-AFM) offers a unique experimental framework for topographical imaging of surfaces with atomic and/or sub-molecular resolution. The technique also permits

• little precision. An accurate stiffness calibration is therefore mandatory if accurate force measurements are targeted. In nc-AFM, the probe may either be a silicon cantilever, a quartz tuning fork (QTF), or a length extensional resonator (LER). When used in ultrahigh vacuum (UHV) and at low temperature

• the framework focuses on a particular kind of sensor, it may be adapted to any high-k, high-Q nc-AFM probe used under similar conditions, such as silicon cantilevers and LERs. Keywords: low temperature; non-contact atomic force microscopy; qPlus sensors; quartz tuning fork; stiffness calibration

Unveiling the nature of atomic defects in graphene on a metal surface

• Karl Rothe,
• Nicolas Néel and
• Jörg Kröger

Beilstein J. Nanotechnol. 2024, 15, 416–425, doi:10.3762/bjnano.15.37

• ) topographies have been claimed to be in accordance with, for example, single-C vacancy sites. However, clear-cut evidence for a missing C atom in the graphene lattice has remained elusive. Therefore, in addition to an STM, an atomic force microscope (AFM) has been used in the present study to unveil the

• geometric structure of the defect sites. Surprisingly, the smallest defect in graphene on Ir(111), which appears as a depression in STM images and, therefore, may readily be assigned to a single-C vacancy site, gives rise to an undistorted graphene lattice in AFM images. In contrast, slightly larger defects

• of defects. Experimental A combined STM-AFM was operated in ultrahigh vacuum (5 × 10−9 Pa) and at low temperature (5 K). Surfaces of Ir(111) were cleaned by Ar+ ion bombardement and annealing. The epitaxial growth of graphene proceeded by exposing the heated (1300 K) Ir(111) surface to the gaseous

Investigating ripple pattern formation and damage profiles in Si and Ge induced by 100 keV Ar⁺ ion beam: a comparative study

• Indra Sulania,
• Harpreet Sondhi,
• Tanuj Kumar,
• Sunil Ojha,
• G R Umapathy,
• Ambuj Mishra,
• Ambuj Tripathi,
• Richa Krishna,
• Devesh Kumar Avasthi and
• Yogendra Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 367–375, doi:10.3762/bjnano.15.33

• microscopy (AFM) [3] and transmission electron microscopy (TEM), it is possible to visualize these features. Formation of dots, ripples, and pits have been well studied using IBS [4][5][6][7][8][9]. In the last few decades, numerous efforts have been made to understand IBS through simulations [10] as well as

• loss values were found to be 47.75 and 59.61 eV/Å for Si and Ge, respectively. The range of Ar ions in Si is 106.5 nm and that in Ge is 72.2 nm. The pristine and irradiated samples were characterized by AFM (Nanoscope IIIa controller, Bruker, USA) using an RTESP tip with radius of curvature of ≈10 nm

• samples were studied via AFM for the surface topography and change in root-mean-square (RMS) surface roughness. Figure 1 shows AFM images of pristine and 100 keV Ar+ ion-irradiated Si samples. Pristine samples show a smooth surface with a surface roughness of ≈0.5 nm as observed in Figure 1A (a). Figure

Controllable physicochemical properties of WO_x thin films grown under glancing angle

• Rupam Mandal,
• Aparajita Mandal,
• Alapan Dutta,
• Rengasamy Sivakumar,
• Sanjeev Kumar Srivastava and
• Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

• −7 mbar). The thickness of the films was measured using a surface profilometer (Ambios, XP 200). The surface morphology of the as-deposited and the annealed films was acquired using tapping mode AFM (Asylum Research). AFM images were recorded at different places on each sample to confirm the film

• uniformity. WSxM software was used to carry out AFM image analysis. Kelvin probe force microscopy (KPFM) was used to study the local work function of the WOx films. WOx samples were removed from the high-vacuum environment right before the KPFM measurements to avoid any contamination in air. For KPFM

• electrons under the InLens configuration. The optical characteristics of the films were examined using a UV–Vis–NIR spectrophotometer (Shimadzu-3101PC) equipped with an unpolarised light source (300–1200 nm wavelength range). Results and Discussion Figure 1a–d depicts AFM topographic images of as-deposited

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS₂ thin films with domains much smaller than the laser spot size

• Felipe Wasem Klein,
• Jean-Roch Huntzinger,
• Vincent Astié,
• Damien Voiry,
• Romain Parret,
• Houssine Makhlouf,
• Sandrine Juillaguet,
• Jean-Manuel Decams,
• Sylvie Contreras,
• Périne Landois,
• Ahmed-Azmi Zahab,
• Jean-Louis Sauvajol and
• Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

• when using precise transfer or AFM tip manipulation techniques [20], twisted MoS2 can be formed with two adjacent layers stacked with a relative twist angle (θ) varying from 0 to 60°. Such twisted-layered MoS2 structures can exhibit a variety of interesting physical properties including unconventional

• mainly composed of 1L-MoS2 and suggesting that the proportions of 2L-MoS2, 3L-MoS2, or more gradually increase with , which is compatible with AFM observations (not shown). To get further insight on the number of layer distributions in DLI-PP-CVD samples, we have measured their ULF modes. Representative

• Nmax being the largest number of layers present in the sample, the definition of the average number of layers can be written as and the total coverage (including bare substrate areas) is obviously 100%: AFM imaging (see Supporting Information File 1, Figure S4) reveals that for > 1.25, the surface is

Design, fabrication, and characterization of kinetic-inductive force sensors for scanning probe applications

• August K. Roos,
• Ermes Scarano,
• Elisabet K. Arvidsson,
• Erik Holmgren and
• David B. Haviland

Beilstein J. Nanotechnol. 2024, 15, 242–255, doi:10.3762/bjnano.15.23

• , gravitational waves acting on a 40 kg mirror in LIGO [3], or atomic-scale tip–surface forces acting on a 40 pg cantilever in an atomic force microscope (AFM). For AFM cantilevers operating at room temperature close to their fundamental resonant frequency in the kilohertz-to-megahertz range, optical

• point where motion detection becomes the limiting source of noise. In this context, the principles of cavity optomechanics may improve the sensitivity of AFM force sensors. Cryogenic AFM further enables the use of superconducting microwave resonators in a cavity optomechanical detection scheme [4][5][6

• equilibrium. With AFM, this is typically done by optoelectronic means, using either interferometry [9][10][11] or beam deflection [12][13][14]. These optical methods often require delicate in situ alignment of the detector to the mechanical force transducer. An integrated detector requiring no alignment is

Quantitative wear evaluation of tips based on sharp structures

• Ke Xu and
• Houwen Leng

Beilstein J. Nanotechnol. 2024, 15, 230–241, doi:10.3762/bjnano.15.22

• Ke Xu Houwen Leng School of Electrical & Control Engineering, Shenyang Jianzhu University, Shenyang 110168, China 10.3762/bjnano.15.22 Abstract To comprehensively study the influence of atomic force microscopy (AFM) scanning parameters on tip wear, a tip wear assessment method based on sharp

• structures is proposed. This research explored the wear of AFM tips during tapping mode and examined the effects of scanning parameters on estimated tip diameter and surface roughness. The experiment results show that the non-destructive method for measuring tip morphology is highly repeatable. Additionally

• , a set of principles for optimizing scanning parameters has been proposed. These principles consider both scanning precision and tip wear. To achieve these results, an AFM probe was used to scan sharp structures, precisely acquiring the tip morphology. Tip wear was minimized by employing lower

Ion beam processing of DNA origami nanostructures

• Leo Sala,
• Agnes Zerolová,
• Violaine Vizcaino,
• Alain Mery,
• Alicja Domaracka,
• Hermann Rothard,
• Philippe Boduch,
• Dominik Pinkas and
• Jaroslav Kocišek

Beilstein J. Nanotechnol. 2024, 15, 207–214, doi:10.3762/bjnano.15.20

• by ion beams, modeling ion implantation, lithography, and sputtering conditions. Structural changes in 2D DNA origami nanostructures deposited on Si are analyzed using AFM imaging. The observed effects on DNA origami include structure height decrease or increase upon fast heavy ion irradiation in

• . Preparation of dry samples and AFM imaging Silicon wafers were cut into ∼7 × 7 mm2 chips and were then plasma-cleaned in air using a Roplass RPS40+ plasma cleaner, which generates a thin layer of plasma by diffuse coplanar surface barrier discharge [35]. The Si surface is exposed to the thin plasma layer for

• , we only evaluated samples on Si. AFM imaging was used to check and subsequently analyze the irradiated samples. The imaging was performed in air using a Dimension Icon AFM (Bruker) in ScanAsyst mode which employs PeakForce Tapping Technology and ScanAsyst probes (40 kHz, 0.4 N/m). Image processing

Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO₂ substrates

• Aleksandra Szkudlarek,
• Jan M. Michalik,
• Inés Serrano-Esparza,
• Zdeněk Nováček,
• Veronika Novotná,
• Piotr Ozga,
• Czesław Kapusta and
• José María De Teresa

Beilstein J. Nanotechnol. 2024, 15, 190–198, doi:10.3762/bjnano.15.18

• provides information about the degree of damage caused by this method. Atomic force microscopy (AFM) measurements reveal important aspects of topographical changes induced in the substrate and help to establish optimized conditions for the etching process. Results The fundamentals of water-assisted FEBIE

• studies: A) optical microscopy, B) scanning electron microscopy (SEM), C) AFM, and D) correlative probe and electron microscopy (CPEM). The optical contrast of graphene placed onto SiO2/Si allows us to easily distinguish between its mono-, bi-, triple, and thicker flakes layers. The values (approx. 2.5 nm

• for a monolayer of graphene onto SiO2) measured using AFM, shown in the insets of Figure 1D, agree with the data obtained in studies presenting femtosecond laser thinning of graphene [28]. In addition to the region located below the baseline, we also observe an elevation in the central part of the

CdSe/ZnS quantum dots as a booster in the active layer of distributed ternary organic photovoltaics

• Gabriela Lewińska,
• Piotr Jeleń,
• Zofia Kucia,
• Maciej Sitarz,
• Łukasz Walczak,
• Bartłomiej Szafraniak,
• Jerzy Sanetra and
• Konstanty W. Marszalek

Beilstein J. Nanotechnol. 2024, 15, 144–156, doi:10.3762/bjnano.15.14

• carried out for three incidence angles (65°, 70°, and 75°). A Bruker atomic force microscope (AFM) MULTIMODE 8 was used in the measurements in the ScanAsyst in Air mode, using silicon nitride probes (with a nominal tip radius of 2 nm and a spring constant equal to 0.4 N/m). The substrate was

• , which favored the charging process of the metallic electrode. These were used to facilitate the transport of charge carriers between the electrode and the layer, which can become problematic because of limitations in the conductivity of organic materials. The changes in roughness presented from the AFM

• coefficients of quantum dots+P3HT+PC71BM mixtures. AFM 2D images of quantum dots+P3HT+PCBM mixtures. Raman plots of P3HT, PCBM, and QDs+P3HT+PCBM mixtures. (a, b) UPS survey spectra, (c) comparison of the cutoffs, and (d) comparison of the UPS spectra of the valence bands. Energy diagram for potential ternary