Imaging and milling resolution of light ion beams from helium ion microscopy and FIBs driven by liquid metal alloy ion sources

• Nico Klingner,
• Gregor Hlawacek,
• Paul Mazarov,
• Wolfgang Pilz,
• Fabian Meyer and
• Lothar Bischoff

Beilstein J. Nanotechnol. 2020, 11, 1742–1749, doi:10.3762/bjnano.11.156

• mass-separated FIBs from a Co36Nd64 LMAIS to implant Co into Si at elevated temperatures, leading to metallic CoSi2 nanostructures down to 20 nm [13]. Ge nanowires could be grown by molecular beam epitaxy, via a vapor–liquid–solid process, on a Si substrate after formation of a regular seed array using

A self-powered, flexible ultra-thin Si/ZnO nanowire photodetector as full-spectrum optical sensor and pyroelectric nanogenerator

• Liang Chen,
• Jianqi Dong,
• Miao He and
• Xingfu Wang

Beilstein J. Nanotechnol. 2020, 11, 1623–1630, doi:10.3762/bjnano.11.145

• -performance PDs for full-spectrum communication and PENGs utilizing a simple and low-cost method, which offer potential applications in self-powered flexible electronic devices. Experimental Fabrication process of the device: Firstly, the ultra-thin (45 μm) p-Si substrate was prepared by isotropic chemical

• etching. More specifically, a 500 μm p-type high conductivity Si substrate was dipped into potassium hydrate (KOH) solution with a concentration of 50% at 130 °C for 6–8 h. Then, the obtained 45 μm p-Si was washed with acetone, isopropanol, and deionized water. Secondly, a thin ZnO seed layer was

High-responsivity hybrid α-Ag₂S/Si photodetector prepared by pulsed laser ablation in liquid

• Raid A. Ismail,
• Hanan A. Rawdhan and
• Duha S. Ahmed

Beilstein J. Nanotechnol. 2020, 11, 1596–1607, doi:10.3762/bjnano.11.142

• from the generated e–h pairs in the depletion region; this process occurred when hν ≥ Eg (Ag2S NPs). As shown in Figure 14, the electrons drifted to Ag2S, and the holes diffused toward the p-Si substrate. Conclusion In this work, we successfully prepared monodisperse Ag2S NPs by laser ablation of a

Fabrication of nano/microstructures for SERS substrates using an electrochemical method

• Jingran Zhang,
• Tianqi Jia,
• Xiaoping Li,
• Junjie Yang,
• Zhengkai Li,
• Guangfeng Shi,
• Xinming Zhang and
• Zuobin Wang

Beilstein J. Nanotechnol. 2020, 11, 1568–1576, doi:10.3762/bjnano.11.139

• over a 20 × 20 μm2 area. Before the tests, the Raman spectra were rectified using a standard Si substrate. A Raman intensity peak of 1362 cm−1 for R6G was chosen in the experiment. An atomic force microscopy (AFM) system (Dimension Icon, Bruker, Germany) was employed to detect the two-dimensional and

Analysis of catalyst surface wetting: the early stage of epitaxial germanium nanowire growth

• Owen C. Ernst,
• Felix Lange,
• David Uebel,
• Thomas Teubner and
• Torsten Boeck

Beilstein J. Nanotechnol. 2020, 11, 1371–1380, doi:10.3762/bjnano.11.121

• were formed throughout the sample surface. The results for gold and germanium deposition onto a silicon substrate are shown in Figure 4c and Figure 4d, respectively. In Figure 4c, the gold droplets formed on the Si substrate were larger than the ones formed on the SiOx substrate (Figure 4b). When

Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films

• Vadim Morari,
• Aida Pantazi,
• Nicolai Curmei,
• Vitalie Postolache,
• Emil V. Rusu,
• Marius Enachescu,
• Ion M. Tiginyanu and
• Veaceslav V. Ursaki

Beilstein J. Nanotechnol. 2020, 11, 899–910, doi:10.3762/bjnano.11.75

• contact on the p-type Si substrate. Figure 9 and Figure 10 compare the current–voltage characteristics of p-Si/n-Zn1−xMgxO heterojunctions for two films deposited by spin coating with x values of 0.10 (Figure 9) and 0.40 (Figure 10). One can see from Figure 9b and Figure 10b that in both cases the current

• ), annealed at 400 °C and measured at a) 300 K and b) 20 K. For comparison, the spectrum of a bulk ZnO single crystal is shown by curve (4). a) XRD pattern of a Zn0.8Mg0.2O film deposited by spin coating on a Si substrate and annealed at 500 °C. b) XRD pattern of a Zn0.8Mg0.2O film deposited by spin coating

Templating effect of single-layer graphene supported by an insulating substrate on the molecular orientation of lead phthalocyanine

• K. Priya Madhuri,
• Abhay A. Sagade,
• Pralay K. Santra and
• Neena S. John

Beilstein J. Nanotechnol. 2020, 11, 814–820, doi:10.3762/bjnano.11.66

• of PbPc on graphene revealing interconnected highly conducting domains. Results and Discussion The Raman spectrum of CVD-grown single-layer graphene transferred onto a SiO2/Si substrate (referred to as SLG/SiO2/Si hereafter) is presented in Figure 2. A sharp and strong peak at 2680 cm−1 corresponds

• found to be 2.82 nm. Wang et al. carried out a similar study by depositing a 10 nm thin ZnPc film on a graphene/SiO2/Si substrate to study the effects of the molecular orientation on the interfacial electronic properties. The roughness of the film was reported to be 2.47 ± 0.28 nm [19]. The crystallite

• thus give rise to higher current values. Conclusion Structural studies of a thin layer of PbPc (10 nm) deposited on CVD-grown single-layer graphene supported on a SiO2/Si substrate show the presence of a mixture of monoclinic and triclinic polymorphs with, respectively, face-on and edge-on

Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface

• Stefania Castelletto,
• Faraz A. Inam,
• Shin-ichiro Sato and
• Alberto Boretti

Beilstein J. Nanotechnol. 2020, 11, 740–769, doi:10.3762/bjnano.11.61

Structural optical and electrical properties of a transparent conductive ITO/Al–Ag/ITO multilayer contact

• Aliyu Kabiru Isiyaku,
• Ahmad Hadi Ali and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2020, 11, 695–702, doi:10.3762/bjnano.11.57

• annealing on the Si substrate obtained using energy-dispersive X-ray spectroscopy (EDXS) are displayed in Table 1. A reduction of the oxygen content was observed after annealing. The content of metal and semiconductor materials accordingly increases. Si as substrate material shows the highest content. The

Electromigration-induced directional steps towards the formation of single atomic Ag contacts

• Atasi Chatterjee,
• Christoph Tegenkamp and
• Herbert Pfnür

Beilstein J. Nanotechnol. 2020, 11, 680–687, doi:10.3762/bjnano.11.55

• ; nanostructures; silver; Si substrate; Introduction The transition from a three-dimensional (3D) conductor to single atomic chains or atomic point contacts is an intriguing process, which has been addressed many times over the years. Its many aspects ranging from bulk solid-state physics to the stability of

Evolution of Ag nanostructures created from thin films: UV–vis absorption and its theoretical predictions

• Robert Kozioł,
• Marcin Łapiński,
• Paweł Syty,
• Damian Koszelow,
• Wojciech Sadowski,
• Józef E. Sienkiewicz and
• Barbara Kościelska

Beilstein J. Nanotechnol. 2020, 11, 494–507, doi:10.3762/bjnano.11.40

• , modelled as spheres truncated by 25% and flattened on the y axis to 60% of the initial size (Figure 1) on a Si substrate were reproduced on a sample of size 2.7 × 3.0 µm (Figure 2). Modelling the whole sample with regards to a realistic shape of the nanoparticles based on TEM images (see Figure 8 below

• , illustrating the shape of the Ag nanoparticles, modelled as truncated and flattened spheres (brown) on a Si substrate (yellow), in air (light blue). Top view of the simulation setup. SEM images of the films after annealing at 250 °C for 15 min. Initial film thickness was: (a) 1 nm, (b) 2 nm, (c) 3 nm, (d) 4 nm

Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

• Botond Sánta,
• Dániel Molnár,
• Patrick Haiber,
• Agnes Gubicza,
• Edit Szilágyi,
• Zsolt Zolnai,
• András Halbritter and
• Miklós Csontos

Beilstein J. Nanotechnol. 2020, 11, 92–100, doi:10.3762/bjnano.11.9

• structure (top to bottom) of 200 nm AgI, 22.5 nm Ag3I and 43 nm Ag after iodine exposure on the Ti/SiO2/Si substrate. Nanometer-scale Ag/AgI/PtIr nanojunctions were created by bringing the PtIr tip into direct contact with the thin-film surface while a constant bias voltage of 100 mV was applied on the

The effect of heat treatment on the morphology and mobility of Au nanoparticles

• Sven Oras,
• Sergei Vlassov,
• Simon Vigonski,
• Boris Polyakov,
• Mikk Antsov,
• Vahur Zadin,
• Rünno Lõhmus and
• Karine Mougin

Beilstein J. Nanotechnol. 2020, 11, 61–67, doi:10.3762/bjnano.11.6

• , Latvia 10.3762/bjnano.11.6 Abstract In the present paper, we investigate the effect of heat treatment on the geometry and mobility of Au nanoparticles (NPs) on a Si substrate. Chemically synthesized Au NPs of diameter ranging from 5 to 27 nm were annealed at 200, 400, 600 and 800 °C for 1 h. A change in

• particles became immovable again. This effect was attributed to the diffusion of Au into the Si substrate and to the growth of the SiO2 layer. Keywords: annealing; atomic force microscopy (AFM); Au nanoparticles; manipulation; melting; nanotribology; Introduction Gold is one of the most prominent

• diffusion of Au into the Si substrate. It is known that gold diffuses into silicon at higher temperatures by the so-called kick-out mechanism, in which self-interstitials present at thermal equilibrium displace substitutionally dissolved Au atoms into interstices, such that these may undergo rapid

Label-free highly sensitive probe detection with novel hierarchical SERS substrates fabricated by nanoindentation and chemical reaction methods

• Jingran Zhang,
• Tianqi Jia,
• Yongda Yan,
• Li Wang,
• Peng Miao,
• Yimin Han,
• Xinming Zhang,
• Guangfeng Shi,
• Yanquan Geng,
• Zhankun Weng,
• Daniel Laipple and
• Zuobin Wang

Beilstein J. Nanotechnol. 2019, 10, 2483–2496, doi:10.3762/bjnano.10.239

• diameter was about 1 μm. The signal detector was a Renishaw CCD camera (1040 × 256). The Raman spectrum was validated with a standard Si substrate, without finding specific peaks. The Raman intensity peaks of the R6G probe and malachite green molecules were chosen as 1362 cm−1 or 1614 cm−1, which are the

The importance of design in nanoarchitectonics: multifractality in MACE silicon nanowires

• Stefania Carapezzi and
• Anna Cavallini

Beilstein J. Nanotechnol. 2019, 10, 2094–2102, doi:10.3762/bjnano.10.204

• Si substrate by electron beam evaporation. The conditions during the growth of the gold thin film were similar to the ones during the growth of the samples SiNW1 and SiNW2. The black regions correspond to the uncovered silicon areas, while the white region represents the deposited Au. It is evident

Fabrication and characterization of Si_1−xGe_x nanocrystals in as-grown and annealed structures: a comparative study

• Muhammad Taha Sultan,
• Adrian Valentin Maraloiu,
• Ionel Stavarache,
• Jón Tómas Gudmundsson,
• Andrei Manolescu,
• Valentin Serban Teodorescu,
• Magdalena Lidia Ciurea and
• Halldór Gudfinnur Svavarsson

Beilstein J. Nanotechnol. 2019, 10, 1873–1882, doi:10.3762/bjnano.10.182

• such that the Si substrate spots together with the ring spots of the SiGe polycrystalline layer were measured. A description of this analysis is given in our previous work [23]. The bright spots are due to Si substrate and the smaller and less bright spots are due to SiGe NCs. The white circular cloud

• photocurrent spectra of as-grown structure (SiGe via dcMS and HiPIMS) are shown in Figure 7a. Deconvolution was carried out to obtain the individual peaks. The observed peaks were assigned to interface related localized states (peak I), the photo effect from NCs (peak N) and capacitive coupling from Si

• substrate, i.e., surface photo-voltage (SPV) and gating effect (peak S). Figure 7b shows the photocurrent for structures of the same batch that underwent annealing procedure for a short period of 1 min at different temperatures. A large increase in intensity was observed by increased annealing temperature

Remarkable electronic and optical anisotropy of layered 1T’-WTe₂ 2D materials

• Qiankun Zhang,
• Rongjie Zhang,
• Jiancui Chen,
• Wanfu Shen,
• Chunhua An,
• Xiaodong Hu,
• Mingli Dong,
• Jing Liu and
• Lianqing Zhu

Beilstein J. Nanotechnol. 2019, 10, 1745–1753, doi:10.3762/bjnano.10.170

• novel device concepts by utilizing its angle-resolved and wavelength-dependent properties. Methods Exfoliation and characterization of 1T’-WTe2 flakes The 1T’-WTe2 single crystals were purchased from XianFeng Nano Corporation. A blue film was used to exfoliate 1T’-WTe2 onto the N++-doped Si substrate

Subsurface imaging of flexible circuits via contact resonance atomic force microscopy

• Wenting Wang,
• Chengfu Ma,
• Yuhang Chen,
• Lei Zheng,
• Huarong Liu and
• Jiaru Chu

Beilstein J. Nanotechnol. 2019, 10, 1636–1647, doi:10.3762/bjnano.10.159

• on the tip and the bottom of the Si substrate was fixed. Because the contact stiffness is the derivative of loading force to elastic deformation, we used the following approximation [43], Here, ΔFi is the difference of the applied forces between load steps i + 1 and i, and Δdi is the difference of

• thickness. Such a behaviour is due to the influence of the Si substrate. When the bottom layer becomes thicker, the substrate effect is less significant. For the middle layer thickness, there is an inflection point at approximately 300 nm. The contact stiffness contrast first drastically increases with

Development of a new hybrid approach combining AFM and SEM for the nanoparticle dimensional metrology

• Loïc Crouzier,
• Alexandra Delvallée,
• Sébastien Ducourtieux,
• Laurent Devoille,
• Guillaume Noircler,
• Christian Ulysse,
• Olivier Taché,
• Elodie Barruet,
• Christophe Tromas and
• Nicolas Feltin

Beilstein J. Nanotechnol. 2019, 10, 1523–1536, doi:10.3762/bjnano.10.150

• defined by: where K the equivalent elastic modulus of the NP and the substrate defined by: where Ei and νi are the Young’s modulus and the Poisson’s ratio of the sphere and the half space. The depth of indentation δ, i.e., the elastic displacement is defined by: In the case of silica NPs deposited on a Si

• substrate under ambient conditions, since the area/volume ratio becomes important, capillary adhesion forces must be taken into account. Deformations of the silica NP and substrate can be assessed using the model developed by Derjaguin, Muller and Toporov (DMT) [33]. This model describes the elastic

Kelvin probe force microscopy of the nanoscale electrical surface potential barrier of metal/semiconductor interfaces in ambient atmosphere

• Petr Knotek,
• Tomáš Plecháček,
• Jan Smolík,
• Petr Kutálek,
• Filip Dvořák,
• Milan Vlček,
• Jiří Navrátil and
• Čestmír Drašar

Beilstein J. Nanotechnol. 2019, 10, 1401–1411, doi:10.3762/bjnano.10.138

• than 10 nm were detected in the map of the surface contact potential. A higher lift height led to a vanishing of the contrast and a lower value resulted in a decrease in reproducibility (data not shown). The results are in a good agreement with the KPFM contrast of nanodiamonds on a Si substrate, where

Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble

• David van Treeck,
• Johannes Ledig,
• Gregor Scholz,
• Jonas Lähnemann,
• Mattia Musolino,
• Abbes Tahraoui,
• Oliver Brandt,
• Andreas Waag,
• Henning Riechert and
• Lutz Geelhaar

Beilstein J. Nanotechnol. 2019, 10, 1177–1187, doi:10.3762/bjnano.10.117

• top contacts and on the back side of the Si substrate, respectively. A more detailed description of the growth and processing procedure as well as the EL and I–V characteristics of the NW-ensemble LED can be found in [12]. The EL and I–V measurements on single-NW LEDs were carried out in a Zeiss

• -Si interface RGaN/Si, the contact resistance Rc between p-GaN and the tungsten probe and the resistance of the NW LED RNW itself. The contributions of the n-Si substrate and the measurement setup were determined to be in the range of a few ohms and therefore can be neglected for our considerations

CuInSe₂ quantum dots grown by molecular beam epitaxy on amorphous SiO₂ surfaces

• Henrique Limborço,
• Pedro M.P. Salomé,
• Rodrigo Ribeiro-Andrade,
• Jennifer P. Teixeira,
• Nicoleta Nicoara,
• Kamal Abderrafi,
• Joaquim P. Leitão,
• Juan C. Gonzalez and
• Sascha Sadewasser

Beilstein J. Nanotechnol. 2019, 10, 1103–1111, doi:10.3762/bjnano.10.110

• study. The approximately 1.6 ± 0.3 nm thick amorphous SiO2 layer is also observed, isolating the nanodot from the Si substrate. A power spectrum (PS) generated from the HAADF image is presented in Figure 2b. Figure 2c presents the simulated diffraction patterns along the [110] zone axis for Si and

• maps of that area for Se, Cu, In, Si, and O. The EDS mapping confirms that the nanodots are grown on top of a SiO2 layer, as shown by the presence of an oxygen-containing layer between the dots and the Si substrate. An EDS quantification performed in this nanodot (and several others) confirmed the

• substrates, bare (as-grown) nanodot samples and CdS-covered nanodot samples, as shown in Figure 4. The PL spectra of the bare Si and CIS samples, Figure 4a, show only the common sharp lines related with the Si substrate [41][42]. The observed lines correspond to the phonon replicas (TA, TO and TO+OΓ) of the

Fabrication of silver nanoisland films by pulsed laser deposition for surface-enhanced Raman spectroscopy

• Bogusław Budner,
• Mariusz Kuźma,
• Barbara Nasiłowska,
• Bartosz Bartosewicz,
• Malwina Liszewska and
• Bartłomiej J. Jankiewicz

Beilstein J. Nanotechnol. 2019, 10, 882–893, doi:10.3762/bjnano.10.89

• . A very sharp edge for height (layer thickness) measurements was obtained in this way due to the low adhesion of the silver films to the Si substrate. AFM measurements were carried out in three different areas on the surface of each sample. Then for each sample ten AFM cross sections from different

• the Si substrate by laser ablation (PLD) registered in a wide range of binding energy, and Ag 3d and Ag-MNN Auger band registered in a narrow range of energy (insert). Reflectance spectra of fabricated Ag nanoisland films: a) for samples with the layers deposited at a laser fluence of 5.56 ± 0.37J/cm2

On the transformation of “zincone”-like into porous ZnO thin films from sub-saturated plasma enhanced atomic layer deposition

• Alberto Perrotta,
• Julian Pilz,
• Stefan Pachmajer,
• Antonella Milella and
• Anna Maria Coclite

Beilstein J. Nanotechnol. 2019, 10, 746–759, doi:10.3762/bjnano.10.74

• (Figure 4b) to 4 s (Figure 4c). Because of the Si substrate, the Si 200 peak is visible in all diffractograms. Starting with the spectra of the pristine Zn-alkoxide layers acquired at 25 °C before calcination (dark blue lines in Figure 4a–c), no ZnO peaks are observed for the sample deposited with 1 s

Temperature-dependent Raman spectroscopy and sensor applications of PtSe₂ nanosheets synthesized by wet chemistry

• Mahendra S. Pawar and
• Dattatray J. Late

Beilstein J. Nanotechnol. 2019, 10, 467–474, doi:10.3762/bjnano.10.46

• onto a Si substrate and heated at 100 °C on a hot plate. After complete evaporation, the substrate was annealed in a chemical vapour deposition system at 500 °C in argon gas atmosphere for 5 h. Supporting Information File 1, Figure S1 shows the schematic of the PtSe2 nanosheet synthesis steps. Sensor

• carried out at ambient pressure and room temperature. Results and Discussion Structural characterization The structural characterization was carried out using X-ray diffraction (XRD) and Raman spectroscopy. Figure 1a shows the typical XRD pattern of the as-prepared sample deposited on a Si substrate. XRD

• -synthesized PtSe2 sample. The X-ray photoelectron spectroscopy (XPS) spectra of the Pt 4f and Se 3d regions acquired on a PtSe2 nanosheet sample were carried out on a film deposited on the Si substrate. The Figure 4a represents the fitted spectrum for Pt 4f7/2 and Pt 4f5/2 with binding energy 72.55 eV and