Mobility of charge carriers in self-assembled monolayers

• Zhihua Fu,
• Tatjana Ladnorg,
• Hartmut Gliemann,
• Alexander Welle,
• Asif Bashir,
• Michael Rohwerder,
• Qiang Zhang,
• Björn Schüpbach,
• Andreas Terfort and
• Christof Wöll

Beilstein J. Nanotechnol. 2019, 10, 2449–2458, doi:10.3762/bjnano.10.235

• vertical charge transport through individual molecules of aromatic SAMs by using conductive atomic force microscope (c-AFM) [12][13][14][15] and scanning tunneling microscope (STM) techniques [16][17]. Using these methods, current–voltage (I–V-) curves on the SAM-forming organothiolates has been determined

Semitransparent Sb₂S₃ thin film solar cells by ultrasonic spray pyrolysis for use in solar windows

• Jako S. Eensalu,
• Atanas Katerski,
• Erki Kärber,
• Lothar Weinhardt,
• Monika Blum,
• Clemens Heske,
• Wanli Yang,
• Ilona Oja Acik and
• Malle Krunks

Beilstein J. Nanotechnol. 2019, 10, 2396–2409, doi:10.3762/bjnano.10.230

• % w/w) from Chemsavers. Solar cell characterization The current–voltage (I–V) curves of the solar cells were measured by using a factory-calibrated solar simulator (Newport Oriel Sol3A class AAA) that provided AM1.5G, 100 mA cm−2 light intensity, a metal mask with adjustable aperture area, and a

Prestress-loading effect on the current–voltage characteristics of a piezoelectric p–n junction together with the corresponding mechanical tuning laws

• Wanli Yang,
• Shuaiqi Fan,
• Yuxing Liang and
• Yuantai Hu

Beilstein J. Nanotechnol. 2019, 10, 1833–1843, doi:10.3762/bjnano.10.178

• non-equilibrium minority carriers under the influence of a piezo potential and to calculate the corresponding current–voltage (I–V) characteristics of a piezoelectric p–n junction exposed to mechanical loading. An effective solution to describe this non-equilibrium process has been put forward

A biomimetic nanofluidic diode based on surface-modified polymeric carbon nitride nanotubes

• Kai Xiao,
• Baris Kumru,
• Lu Chen,
• Lei Jiang,
• Bernhard V. K. J. Schmidt and
• Markus Antonietti

Beilstein J. Nanotechnol. 2019, 10, 1316–1323, doi:10.3762/bjnano.10.130

• CNNMs. Modification of the carbon nitride nanotube membrane The current–voltage (I–V) measurements of the bare carbon nitride nanotubes showed that ion transport across the CNNM is symmetric. The CNNM shows no ion rectification because of its symmetric structure and surface-charge distribution (Figure

• CNNM after unilateral AHPA group modification. (c) FTIR spectra before and after the unilateral modification with AHPA and AA groups. (a) Current–voltage curves before and after unilateral modification with AHPA. (b) Current–voltage curves before and after unilateral modification with AA. Supporting

Molecular attachment to a microscope tip: inelastic tunneling, Kondo screening, and thermopower

• Rouzhaji Tuerhong,
• Mauro Boero and
• Jean-Pierre Bucher

Beilstein J. Nanotechnol. 2019, 10, 1243–1250, doi:10.3762/bjnano.10.124

• tunneling through excitation of molecular vibration modes. Parameter-dependent transport in a molecular junction In order to gain additional information about the kinetics of carriers not contained in the current–voltage characteristics we want to evaluate the impact of the zero-bias peak on the thermopower

Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble

• David van Treeck,
• Johannes Ledig,
• Gregor Scholz,
• Jonas Lähnemann,
• Mattia Musolino,
• Abbes Tahraoui,
• Oliver Brandt,
• Andreas Waag,
• Henning Riechert and
• Lutz Geelhaar

Beilstein J. Nanotechnol. 2019, 10, 1177–1187, doi:10.3762/bjnano.10.117

• Institut für Halbleitertechnik, TU Braunschweig, Hans-Sommer-Str. 66, 38106 Braunschweig, Germany Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany 10.3762/bjnano.10.117 Abstract We present the combined analysis of electroluminescence (EL) and current–voltage (I–V

• employed here a very powerful analysis tool. Keywords: electroluminescence; external quantum efficiency (EQE); nanowire LED; single nanowire; current–voltage; Introduction Group-III nitride nanowire (NW) ensembles have been employed for a wide range of applications, especially optoelectronic devices [1

• approach, single NWs can be directly contacted with a probe tip installed in a scanning electron microscope (SEM). For instance, using this technique, Lee et al. studied the current–voltage (I–V) characteristics of single GaN-based NW LEDs in the ensemble. However, they were not able to measure the

Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2019, 10, 1125–1130, doi:10.3762/bjnano.10.112

• atmosphere for 1 h. The TFTs are designed with fixed width (W) of 50 μm and length (L) of 20 μm. The current–voltage (I–V) curves are measured using an Agilent 4156C semiconductor parameter analyzer at room temperature. For the photo-leakage current measurements, monochromatic light with wavelengths λ of 400

Novel reversibly switchable wettability of superhydrophobic–superhydrophilic surfaces induced by charge injection and heating

• Xiangdong Ye,
• Junwen Hou and
• Dongbao Cai

Beilstein J. Nanotechnol. 2019, 10, 840–847, doi:10.3762/bjnano.10.84

• reversible transition of graphene surface water droplets from hydrophobic to hydrophilic was studied at a shutdown voltage [24]. Nbelayim et al. [25] achieved the reversible transformation of graphene from hydrophobic to hydrophilic driven by a direct-current voltage. Cui et al. [26] tested droplets of

A carrier velocity model for electrical detection of gas molecules

• Ali Hosseingholi Pourasl,
• Sharifah Hafizah Syed Ariffin,
• Mohammad Taghi Ahmadi,
• Razali Ismail and
• Niayesh Gharaei

Beilstein J. Nanotechnol. 2019, 10, 644–653, doi:10.3762/bjnano.10.64

• versa. All these phenomena lead to the variation of the velocity of the electrons and change the current–voltage properties of the sensor. These effects are important factors that can be used as sensing parameters in the sensor modelling. In this paper, the fundamentals and working principles of gas

• molecular adsorption effect on the carrier velocity, the current–voltage properties of the AGNR sensor based on the velocity relation with I–V can be derived as: where n is the charge carrier density, and q is the electrical charge. Besides the modelling study, the first principle calculation using the

• presented before in Figure 5. The hopping integral parameters for NO and CO are extracted and presented in Table 2. Based on Equation 12, the current–voltage properties of the AGNR sensor are illustrated in Figure 7a–c and the effects of the molecular adsorption are discussed. For the bare AGNR, the value

Temperature-dependent Raman spectroscopy and sensor applications of PtSe₂ nanosheets synthesized by wet chemistry

• Mahendra S. Pawar and
• Dattatray J. Late

Beilstein J. Nanotechnol. 2019, 10, 467–474, doi:10.3762/bjnano.10.46

• ]. All of the electrical tests such as current–voltage (I–V) and current–time (I–t) measurements were carried out using a Keithley 2612A system source meter which was attached to a computer through a GPIB 488A interface. For the photodetection study, a green LED was used. All sensor experiments were

Integration of LaMnO_3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD

• Raquel Rodriguez-Lamas,
• Dolors Pla,
• Odette Chaix-Pluchery,
• Benjamin Meunier,
• Fabrice Wilhelm,
• Andrei Rogalev,
• Laetitia Rapenne,
• Xavier Mescot,
• Quentin Rafhay,
• Hervé Roussel,
• Michel Boudard,
• Carmen Jiménez and
• Mónica Burriel

Beilstein J. Nanotechnol. 2019, 10, 389–398, doi:10.3762/bjnano.10.38

• current–voltage characteristics of an orthorhombic LMO device. After a forming step, reproducible and reversible clockwise bipolar RS response was attained. The “set” and “reset” values were around −0.7 V and +0.6 V, respectively, which are considerably lower than those reported for epitaxial LMO (−1.5 V

Transport signatures of an Andreev molecule in a quantum dot–superconductor–quantum dot setup

• Zoltán Scherübl,
• András Pályi and
• Szabolcs Csonka

Beilstein J. Nanotechnol. 2019, 10, 363–378, doi:10.3762/bjnano.10.36

Geometrical optimisation of core–shell nanowire arrays for enhanced absorption in thin crystalline silicon heterojunction solar cells

• Robin Vismara,
• Olindo Isabella,
• Andrea Ingenito,
• Fai Tong Si and
• Miro Zeman

Beilstein J. Nanotechnol. 2019, 10, 322–331, doi:10.3762/bjnano.10.31

• vacuum mask with a 3 mm × 3 mm aperture area, was used to measure the current–voltage characteristics of the fabricated solar cells. The simulator consists of a xenon and a halogen lamp that closely reproduce the spectrum and the intensity of the AM1.5 spectrum [43], which was verified with a c-Si device

Amorphous Ni_xCo_yP-supported TiO₂ nanotube arrays as an efficient hydrogen evolution reaction electrocatalyst in acidic solution

• Yong Li,
• Peng Yang,
• Bin Wang and
• Zhongqing Liu

Beilstein J. Nanotechnol. 2019, 10, 62–70, doi:10.3762/bjnano.10.6

• spectra of the samples. (a) Current–voltage characteristic plots and (b) Tafel plots of the samples. (c) Current–voltage characteristics during durability tests and (d) bath voltages at various current densities for the two-electrode system with NixCoyP/TNAs as a cathode. Cyclic voltammograms of (a) TNAs

Near-infrared light harvesting of upconverting NaYF₄:Yb³⁺/Er³⁺-based amorphous silicon solar cells investigated by an optical filter

• Daiming Liu,
• Qingkang Wang and
• Qing Wang

Beilstein J. Nanotechnol. 2018, 9, 2788–2793, doi:10.3762/bjnano.9.260

• measurements was 60 mW. Optical spectra were recorded using a UV–vis–NIR spectrophotometer (Lambda 750S, PerkinElmer) with an integrating sphere (60 mm) attachment. Current–voltage curves were measured by using a solar simulator under standard test conditions (AM1.5, 100 mW/cm2 and 25 °C). EQE curves were

• reaction time. (c) energy transfer mechanisms for the Yb3+–Er3+ couple under 980 nm laser illumination. (a) FE-SEM images showing the multiple layers of a-Si:H solar cell; (b) current–voltage and (c) EQE curves of a-Si:H solar cell under AM1.5 solar irradiation. (d) transmittance spectrum of a-Si:H solar

• cell without reflector in 370–1100 nm; (e) transmittance spectrum of the optical filter and the inset optical photograph. (a) Current–voltage curves and (b) EQE curves of an a-Si:H solar cell with an UC layer compared with the bare cell under AM1.5 solar irradiation through the optical filter. Inset in

Contactless photomagnetoelectric investigations of 2D semiconductors

• Marian Nowak,
• Marcin Jesionek,
• Barbara Solecka,
• Piotr Szperlich,
• Piotr Duka and
• Anna Starczewska

Beilstein J. Nanotechnol. 2018, 9, 2741–2749, doi:10.3762/bjnano.9.256

• electrostatically tunable carrier density, a 150 nm thick Au film was also deposited on the back surface of the PET foil. The current–voltage characteristics were recorded using a Keithley 6221 DC current source, Keithley 196 digital multimeter, and a Keithley 705 scanner. The measurements were carried out in

Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2018, 9, 2573–2580, doi:10.3762/bjnano.9.239

• visible light irradiation exceeded ≈2.7 eV. Furthermore, the influence of the TIGZO on NBIS-induced instability in a-IGZO TFTs was explored by the combination of current–voltage measurements in double-sweeping VGS mode and capacitance–voltage measurements. The NBIS-induced hysteresis was quantitatively

• explored by combining the current–voltage (I–V) measurements in double-sweeping VGS mode and capacitance–voltage (C–V) measurements. The NBIS-induced hysteresis was quantitatively analyzed using a positive gate pulse mode. The I–V and C–V results revealed that the trapped holes at the etch-stopper/IGZO

High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb)_1−x(MnSb)_x alloy

• Leonid N. Oveshnikov,
• Elena I. Nekhaeva,
• Alexey V. Kochura,
• Alexander B. Davydov,
• Mikhail A. Shakhov,
• Sergey F. Marenkin,
• Oleg A. Novodvorskii,
• Alexander P. Kuzmenko,
• Alexander L. Vasiliev,
• Boris A. Aronzon and
• Erkki Lahderanta

Beilstein J. Nanotechnol. 2018, 9, 2457–2465, doi:10.3762/bjnano.9.230

• samples demonstrated linear current–voltage characteristics down to sub-helium temperatures while sustaining high values of conductivity. The cross-section specimens for S/TEM studies were prepared by focus ion beam (FIB) milling in a Helios (FEI, US) SEM/FIB dual-beam system equipped with C and Pt gas

Magnetism and magnetoresistance of single Ni–Cu alloy nanowires

• Andreea Costas,
• Camelia Florica,
• Elena Matei,
• Maria Eugenia Toimil-Molares,
• Ionel Stavarache,
• Andrei Kuncser,
• Victor Kuncser and
• Ionut Enculescu

Beilstein J. Nanotechnol. 2018, 9, 2345–2355, doi:10.3762/bjnano.9.219

• using a system composed of a closed-cycle He cryostat (Janis SHI-4ST-1; 4–300K), LakeShore electromagnet EM4-HVA (2.5 T) with power supply 642 (0–70 A, 35 V), temperature controller LakeShore 331S, LakeShore DSP 475 Gauss meter, Keithley 2612A current/voltage source, Keithley 6517A multimeter and vacuum

Lead-free hybrid perovskites for photovoltaics

• Oleksandr Stroyuk

Beilstein J. Nanotechnol. 2018, 9, 2209–2235, doi:10.3762/bjnano.9.207

Spin-coated planar Sb₂S₃ hybrid solar cells approaching 5% efficiency

• Pascal Kaienburg,
• Benjamin Klingebiel and
• Thomas Kirchartz

Beilstein J. Nanotechnol. 2018, 9, 2114–2124, doi:10.3762/bjnano.9.200

• atmosphere by mounting the samples (while still inside a glovebox) in a closed holder with glass window. Current–voltage curves were performed with an AM1.5 spectrum on a grade AAA Solar Simulator. No masks were used for solar simulator measurements since the Jsc values were obtained from EQE measurements

Direct AFM-based nanoscale mapping and tomography of open-circuit voltages for photovoltaics

• Katherine Atamanuk,
• Justin Luria and
• Bryan D. Huey

Beilstein J. Nanotechnol. 2018, 9, 1802–1808, doi:10.3762/bjnano.9.171

• , functionality, and widespread benefits of PV devices, such as solar cells. To extract such PV metrics at the nanoscale, for instance with standard 256 × 256 pixel resolution, over 65000 distinct current–voltage spectra must be acquired and analyzed. We previously developed an efficient, method with high spatial

Nanoscale electrochemical response of lithium-ion cathodes: a combined study using C-AFM and SIMS

• Jonathan Op de Beeck,
• Nouha Labyedh,
• Alfonso Sepúlveda,
• Valentina Spampinato,
• Alexis Franquet,
• Thierry Conard,
• Philippe M. Vereecken,
• Wilfried Vandervorst and
• Umberto Celano

Beilstein J. Nanotechnol. 2018, 9, 1623–1628, doi:10.3762/bjnano.9.154

• chemistry, which is an important (missing) piece of information. For this reason, inspired by the work of E. Strelcov et al. [10] on the first-order reversal curve current–voltage (FORC-IV) method on ferroelectrics, we will investigate the fundamentals behind tip-induced sensing in Li-ion cathodes using a

Light extraction efficiency enhancement of flip-chip blue light-emitting diodes by anodic aluminum oxide

• Yi-Ru Huang,
• Yao-Ching Chiu,
• Kuan-Chieh Huang,
• Shao-Ying Ting,
• Po-Jui Chiang,
• Chih-Ming Lai,
• Chun-Ping Jen,
• Snow H. Tseng and
• Hsiang-Chen Wang

Beilstein J. Nanotechnol. 2018, 9, 1602–1612, doi:10.3762/bjnano.9.152

• typical light output power–current–voltage (L–I–V) characteristics of the LEDs with and without AAO structures. The AAO structures enhance the LEE of LEDs but do not change the L–I–V properties. Rigorous coupled-wave analysis We used the rigorous coupled-wave analysis (RCWA) to verify our hypothesis and

• electroluminescence (AREL) spectra of samples FC-BLED and AAO70. Angular resolution of LEE enhancement of (b) AAO60, (c) AAO70, and (d) AAO80. Typical light output power–current–voltage (L–I–V) curves of the samples in this study. Sample structure used in rigorous coupled-wave analysis (RCWA) calculations: (a) AAO

Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

• Daniel Hiller,
• Julian López-Vidrier,
• Keita Nomoto,
• Michael Wahl,
• Wolfgang Bock,
• Tomáš Chlouba,
• František Trojánek,
• Sebastian Gutsch,
• Margit Zacharias,
• Dirk König,
• Petr Malý and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2018, 9, 1501–1511, doi:10.3762/bjnano.9.141

• , which allows for completely N-free silicon oxide. In this work, we investigate the properties of B- and P-incorporating Si NCs embedded in pure silicon oxide compared to silicon oxynitride by atom probe tomography (APT), low-temperature photoluminescence (PL), transient transmission (TT), and current

• –voltage (I–V) measurements. The results clearly show that no free carriers, neither from P- nor from B-doping, exist in the Si NCs, although in some configurations charge carriers can be generated by electric field ionization. The absence of free carriers in Si NCs ≤5 nm in diameter despite the presence