Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

• Jianqi Dong,
• Liang Chen,
• Yuqing Yang and
• Xingfu Wang

Beilstein J. Nanotechnol. 2020, 11, 1847–1853, doi:10.3762/bjnano.11.166

• substrate, followed by a 500 nm layer of Si-doped N-GaN (the doping concentration was 5 × 1018·cm−3). The thickness of the heavily doped GaN was 1.5 μm and the Si doping concentration was 1.0 × 1019·cm−3. The thickness of the two thin N++-GaN layers was only 10 nm each with a Si concentration of 4.5 × 1019

Unravelling the interfacial interaction in mesoporous SiO₂@nickel phyllosilicate/TiO₂ core–shell nanostructures for photocatalytic activity

• Bridget K. Mutuma,
• Xiluva Mathebula,
• Isaac Nongwe,
• Bonakele P. Mtolo,
• Boitumelo J. Matsoso,
• Rudolph Erasmus,
• Zikhona Tetana and
• Neil J. Coville

Beilstein J. Nanotechnol. 2020, 11, 1834–1846, doi:10.3762/bjnano.11.165

• , the electron–hole recombination can be inhibited by loading metals, such as Ni [12], V, Fe [13], Ag [14], and Cu–Ni [15], on the TiO2 surface, which accelerates the formation of hydroxyl radicals and, consequently, improves the photocatalytic activity of TiO2. In contrast, the doping of TiO2 with

• recombination, leading to faster charge transport and photodegradation. Typically, the photocatalytic degradation efficacy of TiO2 depends on the surface area and metal-ion doping on the surface. Metal-ion doping of TiO2 influences its interfacial charge-transfer properties [51]. Differences in

Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy

• Rosine Coq Germanicus,
• Peter De Wolf,
• Florent Lallemand,
• Catherine Bunel,
• Serge Bardy,
• Hugues Murray and
• Ulrike Lüders

Beilstein J. Nanotechnol. 2020, 11, 1764–1775, doi:10.3762/bjnano.11.159

• complete parametric investigation, is performed with a dynamic spectroscopy method. The results emphasize the strong impact, in terms of distinction and location, of the applied bias on the local sMIM measurements for both FEOL and BEOL layers. Keywords: atomic force microscopy (AFM); DataCube; doping

• . The starting material is a p-type Si substrate with relatively high ohmic resistance (1 kΩ·cm), oriented along the ⟨100⟩ direction. The first step in the process consists of forming an n-type doped buried layer (BN) on the top of the wafer (through implantation and diffusion of the doping species). A

• diffusion of electron-acceptor species. Therefore, the intrinsic layer, acting as an insulator due to its low doping concentration, is stacked in between the p-type and n-type layers. The studied sample came from a fully processed wafer, designed for power electronic applications, in which both FEOL and

Imaging and milling resolution of light ion beams from helium ion microscopy and FIBs driven by liquid metal alloy ion sources

• Nico Klingner,
• Gregor Hlawacek,
• Paul Mazarov,
• Wolfgang Pilz,
• Fabian Meyer and
• Lothar Bischoff

Beilstein J. Nanotechnol. 2020, 11, 1742–1749, doi:10.3762/bjnano.11.156

• In modern nanotechnology, focused ion beam (FIB) techniques are well-established for nanoscale structuring, local surface modification, doping, prototyping, as well as for ion beam analysis. One of the main components of such a FIB system is the ion source providing the needed ion species [1

Seebeck coefficient of silicon nanowire forests doped by thermal diffusion

• Shaimaa Elyamny,
• Elisabetta Dimaggio and
• Giovanni Pennelli

Beilstein J. Nanotechnol. 2020, 11, 1707–1713, doi:10.3762/bjnano.11.153

• metal-assisted etching technique. After fabrication, a thermal diffusion process is used for doping the nanowire forest with phosphorous. A suitable experimental technique has been developed for the measurement of the Seebeck coefficient under static conditions, and results are reported for different

• doping parameters. These results are in good agreement with numerical simulations of the doping process applied to silicon nanowires. These devices, based on doped nanowire forests, offer a possible route for the exploitation of the high power factor of silicon, which, combined with the very low thermal

• fabricated on the top of a silicon nanowire forest, which can be achieved by copper electrodeposition [18]. 2) The optimum doping concentration of the nanowires for the exploitation of the maximum power factor of silicon [3] needs to be found. Both the Seebeck coefficient and the electrical conductivity

Piezoelectric sensor based on graphene-doped PVDF nanofibers for sign language translation

• Shuai Yang,
• Xiaojing Cui,
• Rui Guo,
• Zhiyi Zhang,
• Shengbo Sang and
• Hulin Zhang

Beilstein J. Nanotechnol. 2020, 11, 1655–1662, doi:10.3762/bjnano.11.148

• a high sensitivity to pressing and bending, and there is a stable correlation between bending angle and piezoelectric voltage. The sensitivity can be adjusted by changing the doping concentration of GR. Also, when the PES contacts a source of heat, a pyroelectric signal can be acquired. The positive

• bending could be obtained. The amount of GR doping has an impact on sensitivity. In addition, the sensor will generate a large pyroelectric signal when it is touched with a hot object, which can be used to prevent burns of the hands. When the PES is integrated in a measuring circuit, it can accurately

• both sides, and the PDMS protective layer on the outermost sides. Each PVDF fiber contains GR doping. Figure 1b shows a schematic diagram of a sign language translation system based on a self-powered PES. Sensors are separately integrated into the gloves at the joints of the fingers and the fingertips

Atomic defect classification of the H–Si(100) surface through multi-mode scanning probe microscopy

• Jeremiah Croshaw,
• Thomas Dienel,
• Taleana Huff and
• Robert Wolkow

Beilstein J. Nanotechnol. 2020, 11, 1346–1360, doi:10.3762/bjnano.11.119

• due to its conductive orbital which extends into vacuum. DBs have been observed to act like quantum dots and have discretized charge states in the bandgap of the material [6]. Due to the degenerate n-type doping of our substrate (see Methods) [6][53], DBs are natively negatively charged when imaging

• vacancy, which localize charge due to the degenerate doping of the crystal (see Methods for sample details). Starting with Figure 4a (labelled I), the defect is centred around a surface lattice site affecting one side of a dimer, with the negative charge bending the bands down locally as evidenced by the

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors

• Jakub Jadwiszczak,
• Pierce Maguire,
• Conor P. Cullen,
• Georg S. Duesberg and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

• improvement of both the carrier mobility in the transistor channel and the electrical conductance of the MoS2, due to doping with ion beam-created sulfur vacancies. Larger areal irradiations introduce a higher concentration of scattering centers, hampering the electrical performance of the device. In addition

• , we find that irradiating the electrode–channel interface has a deleterious impact on charge transport when contrasted with irradiations confined only to the transistor channel. Keywords: 2D materials; contacts; defect engineering; helium ion microscope; ion beam doping; vacancies; two-dimensional

• cm−2 [13][14][15][16][17], as well as good electrical conductivity for up to approx. 1018 ions cm−2 [9][10][18]. Sulfur vacancies (SVs) and the formation of a dislocation–divacancy complex can lead to significant n-doping in MoS2 [19], which shifts the threshold voltage (Vth) of the FET to higher

Structural and electronic properties of SnO₂ doped with non-metal elements

• Jianyuan Yu,
• Yingeng Wang,
• Yan Huang,
• Xiuwen Wang,
• Jing Guo,
• Jingkai Yang and
• Hongli Zhao

Beilstein J. Nanotechnol. 2020, 11, 1321–1328, doi:10.3762/bjnano.11.116

• SnO2 doped with non-metal elements (F, S, C, B, and N) were studied using first-principles calculations. The theoretical results show that doping of non-metal elements cannot change the structure of SnO2 but result in a slight expansion of the lattice volume. The most obvious finding from the analysis

• is that F-doped SnO2 has the lowest defect binding energy. The doping with B and S introduced additional defect energy levels within the forbidden bandgap, which improved the crystal conductivity. The Fermi level shifts up due to the doping with B, F, and S, while the Fermi level of SnO2 doped with C

• SnO2 is not conductive due to the absence of free carriers. However, the bandgap of 3.6 eV of SnO2 makes it a potentially ideal material for transparent electrode films. It had been proved that the doping of heteroatoms to replace Sn or O can lead to more carriers or holes. Therefore, extensive

Ultrasensitive detection of cadmium ions using a microcantilever-based piezoresistive sensor for groundwater

• Dinesh Rotake,
• Anand Darji and
• Nitin Kale

Beilstein J. Nanotechnol. 2020, 11, 1242–1253, doi:10.3762/bjnano.11.108

• vapor deposition (LPCVD) furnace at 630 °C and boron doping (1018 per cm3) is carried out using ion implantation at 35 keV. The upper SiO2 layer is formed by re-oxidizing the polysilicon in an oxidation furnace [40]. The stiffness (k) of the fabricated piezoresistive sensor measured using AFM is 131–146

Nonadiabatic superconductivity in a Li-intercalated hexagonal boron nitride bilayer

• Kamila A. Szewczyk,
• Izabela A. Domagalska,
• Artur P. Durajski and
• Radosław Szczęśniak

Beilstein J. Nanotechnol. 2020, 11, 1178–1189, doi:10.3762/bjnano.11.102

• 93.29 to 145.16 meV. The above facts suggest that the composition of Li-hBN could be changed to significantly increase the values of the Eliashberg function in the range from 93.29 to 145.16 meV. Most likely by appropriate doping of the starting compound. However, this is not a simple task and requires

Revealing the local crystallinity of single silicon core–shell nanowires using tip-enhanced Raman spectroscopy

• Marius van den Berg,
• Ardeshir Moeinian,
• Arne Kobald,
• Yu-Ting Chen,
• Anke Horneber,
• Steffen Strehle,
• Alfred J. Meixner and
• Dai Zhang

Beilstein J. Nanotechnol. 2020, 11, 1147–1156, doi:10.3762/bjnano.11.99

• to chemical vapor deposition (CVD), and enables direct nanowire growth in a bottom-up manner. The nanowire composition, in particular the doping concentration, can be controlled by an adequate adjustment of the synthesis gas mixture, e.g., by setting the SiH4/B2H6 ratio during the synthesis of boron

Applications of superparamagnetic iron oxide nanoparticles in drug and therapeutic delivery, and biotechnological advancements

• Maria Suciu,
• Corina M. Ionescu,
• Alexandra Ciorita,
• Septimiu C. Tripon,
• Dragos Nica,
• Hani Al-Salami and
• Lucian Barbu-Tudoran

Beilstein J. Nanotechnol. 2020, 11, 1092–1109, doi:10.3762/bjnano.11.94

• nanoparticles, without doping or doped with rare earth metals, were designed in our labs for the use in MRI. Our studies showed that their effects on cells depend on the cell type, cluster design and concentration [158][159]. Asgari et al. [160] produced 50 nm SPION–carbon dot nanoparticles, which were designed

A new photodetector structure based on graphene nanomeshes: an ab initio study

• Babak Sakkaki,
• Hassan Rasooli Saghai,
• Ghafar Darvish and
• Mehdi Khatir

Beilstein J. Nanotechnol. 2020, 11, 1036–1044, doi:10.3762/bjnano.11.88

• of the same GNR type. Also, we consider the electrodes have n-type doping. The left- and the right-hand edge of the electrodes are shown in the figure with black lines. Figure 1e shows a typical GNM-based device where nanomesh channel with graphene contacts are introduced to be used in our

Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

• Elena I. Monaico,
• Eduard V. Monaico,
• Veaceslav V. Ursaki,
• Shashank Honnali,
• Vitalie Postolache,
• Karin Leistner,
• Kornelius Nielsch and
• Ion M. Tiginyanu

Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81

• doping level of the used crystal. We will focus further on the results obtained by anodization of the (111)B surface because the resulting morphology is of great interest for the development of porous nanotemplates and elaboration of free-standing nanomembranes based on GaAs. The results of a comparative

Measurement of electrostatic tip–sample interactions by time-domain Kelvin probe force microscopy

• Christian Ritz,
• Tino Wagner and
• Andreas Stemmer

Beilstein J. Nanotechnol. 2020, 11, 911–921, doi:10.3762/bjnano.11.76

• characterize doping profiles via scanning capacitance measurements [6]. Especially in the field of nanoelectronic devices, this kind of electrical characterizations is of great interest. Local potential drops across active nanostructures reveal information about the local resistivity and can provide crucial

Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films

• Vadim Morari,
• Aida Pantazi,
• Nicolai Curmei,
• Vitalie Postolache,
• Emil V. Rusu,
• Marius Enachescu,
• Ion M. Tiginyanu and
• Veaceslav V. Ursaki

Beilstein J. Nanotechnol. 2020, 11, 899–910, doi:10.3762/bjnano.11.75

• possibility for easy doping and preparation of homogeneous films with good electrical and optical properties. The films are prepared on various substrates such as ZnO [6], MgO [17], Si [2][3][4][23], CaF2 [12], Al2O3 [18], sapphire [7][10][11][13][14][15][16][19][31][32], glass and quartz [1][20][21][23][24

• demonstrated on p-type Si [2][4] because p-type doping is still a big challenge to ZnO-based semiconductors. Liang et al. demonstrated a ZnMgO/p-Si heterojunction solar-blind UV photodetector with a BeO buffer layer [35]. In terms of the crystal structure of ZnMgO films used in photodetectors, three types of

• amplitude of potential fluctuations is determined by the degree of doping and conductivity compensation. In porous semiconductors the amplitude is determined by the degree of porosity, while it is a function of local fluctuations of the composition in solid solutions, including ZnMgO. The observation of the

Light–matter interactions in two-dimensional layered WSe₂ for gauging evolution of phonon dynamics

• Avra S. Bandyopadhyay,
• Chandan Biswas and
• Anupama B. Kaul

Beilstein J. Nanotechnol. 2020, 11, 782–797, doi:10.3762/bjnano.11.63

• the electron–phonon interaction, i.e., scattering of electrons from defects. Chakrabarty et al. reported that the linewidth of the A1g peak in single-layer MoS2 that was subsequently used in transistors, broadened due to n-type doping where the phonon linewidth renormalized under the presence of an

• through the analysis of the individual scattering events themselves, as deduced from Matthiessen’s rule [38][46][62]. As discussed earlier, the phonon linewidth broadening arises from the scattering of phonons with defects, doping, electrons, etc., and consequently, the resulting τ is an average of the

• contributions from each of those scattering sources. Hence, the phonon concentration, defect density, doping concentrations, etc. determine the effective strength of a scattering source and disparities between them cause the differences in the measured lifetimes in 1L, ML and bulk WSe2 which we observed in

Nickel nanoparticles supported on a covalent triazine framework as electrocatalyst for oxygen evolution reaction and oxygen reduction reactions

• Secil Öztürk,
• Yu-Xuan Xiao,
• Dennis Dietrich,
• Beatriz Giesen,
• Juri Barthel,
• Jie Ying,
• Xiao-Yu Yang and
• Christoph Janiak

Beilstein J. Nanotechnol. 2020, 11, 770–781, doi:10.3762/bjnano.11.62

• a fast and efficient microwave synthesis within 10 min from Ni(COD)2 and the CTF substrate in an ionic liquid. The choice of the CTF substrate enables the control over nitrogen doping by selecting appropriate aromatic nitriles as monomers [32][37][40]. Also, it has been proven that the use of CTFs

Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface

• Stefania Castelletto,
• Faraz A. Inam,
• Shin-ichiro Sato and
• Alberto Boretti

Beilstein J. Nanotechnol. 2020, 11, 740–769, doi:10.3762/bjnano.11.61

• wafer-scale fabrication. This must be available at the same level of purity, with doping control and electronic compatibility, as well as scalable methodologies to create a large number of arrays of point defects with controlled emission to remotely entangle them and couple to ancilla qubits for quantum

Effect of Ag loading position on the photocatalytic performance of TiO₂ nanocolumn arrays

• Jinghan Xu,
• Yanqi Liu and
• Yan Zhao

Beilstein J. Nanotechnol. 2020, 11, 717–728, doi:10.3762/bjnano.11.59

• (200–400 nm), and the high hole–electron pair recombination rate restricts its photocatalytic efficiency [6][7]. Many efforts have been devoted to solve these problems with the aim of improving the catalytic performance of TiO2, which include doping with nonmetal elements [8], dye sensitization [9

Soybean-derived blue photoluminescent carbon dots

• Shanshan Wang,
• Wei Sun,
• Dong-sheng Yang and
• Fuqian Yang

Beilstein J. Nanotechnol. 2020, 11, 606–619, doi:10.3762/bjnano.11.48

• to introduce N-surface-functional groups to carbon nanoparticles made from biomass and biowaste and to produce stable photoluminescent CDs with excellent water-wettability. Keywords: biomass; carbon dots; hydrothermal process; laser ablation; N-doping; photoluminescence; Introduction Carbon-based

• the graphitic, pyrrolic, amine and pyridinic nitrogen. All these results suggest that the LAL processing of the annealed-HTC carbon particles in NH4OH solutions is an effective method for doping N into carbon nanoparticles, and the amount of doped N can be simply controlled by the concentration of the

Luminescent gold nanoclusters for bioimaging applications

• Nonappa

Beilstein J. Nanotechnol. 2020, 11, 533–546, doi:10.3762/bjnano.11.42

• complexes and SCQD-based nanomaterials. To improve the quantum yield and PL, various approaches have been developed including ligand engineering, selective doping to create alloy clusters, aggregation-induced emission, selective etching and self-assembly [48][49][50][51][52][53][54][55][56][57][58]. Ligands

Electrochemically derived functionalized graphene for bulk production of hydrogen peroxide

• Munaiah Yeddala,
• Pallavi Thakur,
• Anugraha A and
• Tharangattu N. Narayanan

Beilstein J. Nanotechnol. 2020, 11, 432–442, doi:10.3762/bjnano.11.34

• metal-based technologies [28][29]. For example, carbon nanotubes (CNTs) have been well studied for their catalytic activity, although conflicting reports exist due to the presence of unavoidable metallic impurities present [30][31][32][33]. With the emergence of graphene, heteroatom doping in sp2

DFT calculations of the structure and stability of copper clusters on MoS₂

• Cara-Lena Nies and
• Michael Nolan

Beilstein J. Nanotechnol. 2020, 11, 391–406, doi:10.3762/bjnano.11.30

• , or doping with, various elements including transition metals [3][9][24][25][26][27][28], alkali and alkaline-earth metals [29][30][31] as well as non-metals such as H, B, C, O and N [31]. Work involving atom adsorption on 2D materials can generally be divided into two categories: single-atom