Electrostatically actuated encased cantilevers

• Benoit X. E. Desbiolles,
• Gabriela Furlan,
• Adam M. Schwartzberg,
• Paul D. Ashby and
• Dominik Ziegler

Beilstein J. Nanotechnol. 2018, 9, 1381–1389, doi:10.3762/bjnano.9.130

• length l of the free resonator, however, is set by the etching duration. Located inside the encasement its exact length is not easily measurable. Hence, we determine it from the resulting resonance frequency. The frequency of a tip-less beam in vacuum is well known and given by f0 = 0.162 (t/l2), where

Chemistry for electron-induced nanofabrication

• Petra Swiderek,
• Hubertus Marbach and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2018, 9, 1317–1320, doi:10.3762/bjnano.9.124

• beams can be used to induce, on a very small area, chemical reactions of adsorbed precursor molecules that either lead to etching of the underlying surface or deposition of material. The latter additive variant of FEBIP is focused electron beam induced deposition (FEBID), a powerful direct-write

Field-controlled ultrafast magnetization dynamics in two-dimensional nanoscale ferromagnetic antidot arrays

• Anulekha De,
• Sucheta Mondal,
• Sourav Sahoo,
• Saswati Barman,
• Yoshichika Otani,
• Rajib Kumar Mitra and
• Anjan Barman

Beilstein J. Nanotechnol. 2018, 9, 1123–1134, doi:10.3762/bjnano.9.104

• irradiation of laser light. A PMMA/MMA bilayer resist was used for electron-beam lithography to prepare the resist pattern on the Py thin film followed by argon ion milling at a base pressure of 1 × 10−4 Torr with a beam current of 60 mA for 6 min for etching out the Py film from everywhere except the

A simple extension of the commonly used fitting equation for oscillatory structural forces in case of silica nanoparticle suspensions

• Sebastian Schön and
• Regine von Klitzing

Beilstein J. Nanotechnol. 2018, 9, 1095–1107, doi:10.3762/bjnano.9.101

• ± 2 nm [34]. Silicon wafers (Wacker Chemie) were used as substrates. Preparation The silicon wafers were cleaned prior to each experiment by etching in a 1:1:5 solution of hydrogen peroxide (30% Th. Geyer GmbH & Co KG), ammonium hydroxide (30–33% Carl Roth GmbH & Co KG) and water at 60 °C for 10 min

Facile chemical routes to mesoporous silver substrates for SERS analysis

• Elina A. Tastekova,
• Alexander Y. Polyakov,
• Anastasia E. Goldt,
• Alexander V. Sidorov,
• Alexandra A. Oshmyanskaya,
• Irina V. Sukhorukova,
• Dmitry V. Shtansky,
• Wolgang Grünert and
• Anastasia V. Grigorieva

Beilstein J. Nanotechnol. 2018, 9, 880–889, doi:10.3762/bjnano.9.82

• long time in air. Mesoporous noble metals are mostly used as catalysts for high surface energy, gas sensor components, cell imaging mediators, etc. [5]. The most popular methods for mesoporous metal processing include acidic etching of bimetallic molts [6], electrochemical dealloying [7

• ], electroplating using templates [8], electrophoretic deposition of nanoparticles [9] and diverse techniques of hollow porous structure formation, for example, by aerosol pyrolysis or by smart chemical etching. The latter includes selective chemical etching of one metal component [10][11] or etching during

• galvanic replacement [12]. Among other relevant strategies, nanoparticle aggregation [13][14] or direct deposition of porous films without templates [15][16] should be mentioned. Chemical etching is a technically low demand process – an important advantage of this technique. However, it requires that the

The effect of atmospheric doping on pressure-dependent Raman scattering in supported graphene

• Egor A. Kolesov,
• Mikhail S. Tivanov,
• Olga V. Korolik,
• Olesya O. Kapitanova,
• Xiao Fu,
• Hak Dong Cho,
• Tae Won Kang and
• Gennady N Panin

Beilstein J. Nanotechnol. 2018, 9, 704–710, doi:10.3762/bjnano.9.65

• /isopropyl alcohol mixture was used to wash graphene from etching products [31]. PMMA was removed by submerging the sample in glacial acetic acid (extra pure) [32] for 4 h. Graphene, doped with nitrogen, was prepared using a nitrogen-plasma treatment described elsewhere [33]. The Raman spectra were obtained

Perovskite-structured CaTiO₃ coupled with g-C₃N₄ as a heterojunction photocatalyst for organic pollutant degradation

• Ashish Kumar,
• Christian Schuerings,
• Suneel Kumar,
• Ajay Kumar and
• Venkata Krishnan

Beilstein J. Nanotechnol. 2018, 9, 671–685, doi:10.3762/bjnano.9.62

• at 550 °C with a temperature ramp of 3 °C/min for 4 h in static air and allowed to cool naturally to room temperature. The resultant yellow mass was well ground to form a fine powder. The thus-obtained powder was subjected to thermal oxidation etching in static air at 500 °C for 2 h with a ramp rate

Facile synthesis of ZnFe₂O₄ photocatalysts for decolourization of organic dyes under solar irradiation

• Arjun Behera,
• Debasmita Kandi,
• Sanjit Manohar Majhi,
• Satyabadi Martha and
• Kulamani Parida

Beilstein J. Nanotechnol. 2018, 9, 436–446, doi:10.3762/bjnano.9.42

• in 120 min [19]. The photocatalytic activity of ZnFe2O4 has also been tested in the degradation of Rh B [24]. Zhao et al. have synthesized ZnFe2O4 through chemical etching followed by calcination and reported a degradation rate of 31% in 3 h [24]. Doong and co-workers have prepared ZnFe2O4 through a

Blister formation during graphite surface oxidation by Hummers’ method

• Olga V. Sinitsyna,
• Georgy B. Meshkov,
• Anastasija V. Grigorieva,
• Alexander A. Antonov,
• Inna G. Grigorieva and
• Igor V. Yaminsky

Beilstein J. Nanotechnol. 2018, 9, 407–414, doi:10.3762/bjnano.9.40

• wavy, probably due to the etching by the oxidation mixture. We found that the blister density becomes larger before the large cleavage steps (more than 10 nm). We believe that the blisters cannot expand under a rather thick graphite layer because of its high rigidity. The blisters did not form only

The nanofluidic confinement apparatus: studying confinement-dependent nanoparticle behavior and diffusion

• Stefan Fringes,
• Felix Holzner and
• Armin W. Knoll

Beilstein J. Nanotechnol. 2018, 9, 301–310, doi:10.3762/bjnano.9.30

• photolithography. Third, the masking layer was removed by wet etching (TechniEtch ACI2, MicroChemicals and TechniStrip Cr01, MicroChemicals) of the unprotected areas, leaving behind a central metal-resist stack defining the position of the mesa. The area around the stack was etched for 75 s by concentrated

• hydrofluoric acid (49% HF) to define the mesa. A mesa height of 40–45 μm was measured with a profilometer (Dektak, Veeco), corresponding to an etch rate of ≈36 μm/min, similar to the rate observed by Zhu et al. [24]. Finally, the remaining masking layer was removed by etching, and the processed cover glass was

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

• Liga Jasulaneca,
• Jelena Kosmaca,
• Raimonds Meija,
• Jana Andzane and
• Donats Erts

Beilstein J. Nanotechnol. 2018, 9, 271–300, doi:10.3762/bjnano.9.29

• nanomanipulation approaches. The top-down approach involves lithography, etching and coating technologies to fabricate device structures from bulk materials or thin films [7][19][23][39][47][48][49][50]. The combined approach of fabricating NEM switches requires subsequent transfer and alignment of synthesized

• was followed by etching of the SiO2 sacrificial layer for the release of Mo switching structures [19][115]. Switches with 300 nm thick and 500–700 nm wide switching elements with lengths 28–40 µm showed jump-in voltages in the range of 12–24 V for separation gaps of 100–150 nm. Cycling tests performed

• the best-achieved turn-on delay of 400 ns. When tested for durability, the Ru device withstood more than 2 × 106 switching cycles at 1 kHz frequency. However, when downscaling Ru NEM switches, residual stress must be accurately controlled to avoid the buckling of beams after etching of the sacrificial

Design of photonic microcavities in hexagonal boron nitride

• Sejeong Kim,
• Milos Toth and
• Igor Aharonovich

Beilstein J. Nanotechnol. 2018, 9, 102–108, doi:10.3762/bjnano.9.12

• spectral range, which overlap with the ZPLs of SPEs in hBN [24]. We further optimize the structures and model 1D nanobeam photonic crystals that exhibit a Q-factor in excess of ≈20,000. In the light of recent progress in direct-write etching of hBN [25], our results are promising for realization of high Q

Electron-driven and thermal chemistry during water-assisted purification of platinum nanomaterials generated by electron beam induced deposition

• Ziyan Warneke,
• Markus Rohdenburg,
• Jonas Warneke,
• Janina Kopyra and
• Petra Swiderek

Beilstein J. Nanotechnol. 2018, 9, 77–90, doi:10.3762/bjnano.9.10

• be desorbed from the deposit as an intact unit. We propose that such reactions are relevant to the removal of carbon during deposit purification processes assisted by H2O and also to the recently reported electron-induced etching of graphene using an ice layer as resist [17]. Contributions from

The rational design of a Au(I) precursor for focused electron beam induced deposition

• Ali Marashdeh,
• Thiadrik Tiesma,
• Niels J. C. van Velzen,
• Sjoerd Harder,
• Remco W. A. Havenith,
• Jeff T. M. De Hosson and
• Willem F. van Dorp

Beilstein J. Nanotechnol. 2017, 8, 2753–2765, doi:10.3762/bjnano.8.274

• processing (FEBIP) [1][2][3]. In the case of writing a precursor provides the ink, in the case of etching a precursor enables the removal of sample material. The precursors are usually gaseous, although they can also be liquid [4][5]. In the case of gaseous precursors, the gas is delivered to the sample

Patterning of supported gold monolayers via chemical lift-off lithography

• Liane S. Slaughter,
• Kevin M. Cheung,
• Sami Kaappa,
• Huan H. Cao,
• Qing Yang,
• Thomas D. Young,
• Andrew C. Serino,
• Sami Malola,
• Jana M. Olson,
• Stephan Link,
• Hannu Häkkinen,
• Anne M. Andrews and
• Paul S. Weiss

Beilstein J. Nanotechnol. 2017, 8, 2648–2661, doi:10.3762/bjnano.8.265

• patterned Au substrates prior to lift-off (e.g., selective wet etching), or by patterning alkanethiols on Au substrates to be reactive in selected regions but not others (controlled reactivity). In all cases, the regions containing Au–alkanethiolate layers have a sub-nanometer apparent height, which was

• first round of CLL. Here, topographically patterned PDMS stamps were used to lift-off hydroxyl-terminated self-assembled alkanethiols (Figure S1, Supporting Information File 1) [1][9]. Following this CLL step, Au in the lifted-off (exposed) regions was removed by wet etching to form Au features in the

Direct writing of gold nanostructures with an electron beam: On the way to pure nanostructures by combining optimized deposition with oxygen-plasma treatment

• Domagoj Belić,
• Mostafa M. Shawrav,
• Emmerich Bertagnolli and
• Heinz D. Wanzenboeck

Beilstein J. Nanotechnol. 2017, 8, 2530–2543, doi:10.3762/bjnano.8.253

• break-up of precursor molecules. By varying the experimental parameters one can alter the deposition process and hence change the properties of deposited material, such as its shape, structure, and elemental composition. We note that no etching by the F found in the precursor was observed. Firstly, we

Strategy to discover full-length amyloid-beta peptide ligands using high-efficiency microarray technology

• Clelia Galati,
• Natalia Spinella,
• Lucio Renna,
• Danilo Milardi,
• Francesco Attanasio,
• Michele Francesco Maria Sciacca and
• Corrado Bongiorno

Beilstein J. Nanotechnol. 2017, 8, 2446–2453, doi:10.3762/bjnano.8.243

• silicon is used as the starting material. After standard cleaning, etching in diluted HF (aq), and rinsing in deionized water, single crystalline, Czochralski grown, silicon(100) slices were mounted in a conventional furnace operating at atmospheric pressure. Thermal oxidation was performed at a

• [41][43]. The O2-plasma cleaning was performed using the plasma etching system, Sentech 591, using 60 sccm of oxygen fluxing for 2 min. The resulting epoxysilane coating provide a proper surface for the immobilization of peptides in a microarray format. Moreover, due to the low fluorescence background

Comparing postdeposition reactions of electrons and radicals with Pt nanostructures created by focused electron beam induced deposition

• Julie A. Spencer,
• Michael Barclay,
• Miranda J. Gallagher,
• Robert Winkler,
• Ilyas Unlu,
• Yung-Chien Wu,
• Harald Plank,
• Lisa McElwee-White and
• D. Howard Fairbrother

Beilstein J. Nanotechnol. 2017, 8, 2410–2424, doi:10.3762/bjnano.8.240

• in the presence of O2 gas, or by using both precursor and O2 gas simultaneously during deposition, nearly 100 atom % Pt deposits could be generated from FEBID nanostructures created from the commonly used precursor MeCpPtMe3. Simultaneous deposition and etching produced void-free structures with

• using H2O. Geier et al. [13] demonstrated that for FEBID structures created from MeCpPtMe3, postdeposition electron beam irradiation in the presence of a local water pressure of 10 Pa results in a highly efficient electron-limited etching regime. This process enabled purification rates of better than 5

• the mobility of Pt–H species) as compared to the rest of the PtCl2 structure. Another possible explanation is that carbonaceous deposits, which are more resistant to subsequent AH etching, are formed in regions of the PtCl2 deposit initially exposed to electrons during EDS analysis. In summary, AH is

Robust procedure for creating and characterizing the atomic structure of scanning tunneling microscope tips

• Sumit Tewari,
• Koen M. Bastiaans,
• Milan P. Allan and
• Jan M. van Ruitenbeek

Beilstein J. Nanotechnol. 2017, 8, 2389–2395, doi:10.3762/bjnano.8.238

• -temperature annealing as for many semiconductors. However, a well defined tip structure at the atomic scale is still hard to achieve. Mechanical grinding [1], electro-polishing [11] or electrochemical etching [12][13] are standard ex situ methods for preparing microscopically sharp tips. The tip apex can be

Increasing the stability of DNA nanostructure templates by atomic layer deposition of Al₂O₃ and its application in imprinting lithography

• Hyojeong Kim,
• Kristin Arbutina,
• Anqin Xu and
• Haitao Liu

Beilstein J. Nanotechnol. 2017, 8, 2363–2375, doi:10.3762/bjnano.8.236

• the exposed substrate through shadow gaps was etched to generate trenches with linewidths of sub-10 nm resolution [32]. By differentiating the adsorption of water between DNA nanostructures and a SiO2 substrate, the rates of HF vapor-phase etching of the SiO2 substrate [33] and of chemical vapor

• . Similarly, DNA nanostructures were also used in the anhydrous HF vapor etching of a SiO2 substrate, producing positive imprints of the DNA nanostructures with sub-10 nm resolution [35]. DNA nanostructures were also converted into carbon nanostructures with shape conservation by atomic layer deposition of

Fabrication of gold-coated PDMS surfaces with arrayed triangular micro/nanopyramids for use as SERS substrates

• Jingran Zhang,
• Yongda Yan,
• Peng Miao and
• Jianxiong Cai

Beilstein J. Nanotechnol. 2017, 8, 2271–2282, doi:10.3762/bjnano.8.227

• ] were also produced by a lithography-based method and reproducible plastic substrates were machined using different nanoimprinting methods [26]. For example, Courvoisier et al. [4] designed and fabricated an accurate inverted array of squares as a template on a silicon wafer via EBL and wet etching

• approaches. They produced arrays of tipless pyramids using an optical UV curing method. Lee et al. [24] used anodic aluminum oxide as a template for transferring patterns onto the polydimethylsiloxane (PDMS) substrate surfaces using a dry etching method. In this work, the detection of DNA molecules showed a

Angstrom-scale flatness using selective nanoscale etching

• Takashi Yatsui,
• Hiroshi Saito and
• Katsuyuki Nobusada

Beilstein J. Nanotechnol. 2017, 8, 2181–2185, doi:10.3762/bjnano.8.217

• realization of flat surfaces on the angstrom scale is required in advanced devices to avoid loss due to carrier (electron and/or photon) scattering. In this work, we have developed a new surface flattening method that involves near-field etching, where optical near-fields (ONFs) act to dissociate the

• molecules. ONFs selectively generated at the apex of protrusions on the surface selectively etch the protrusions. To confirm the selective etching of the nanoscale structure, we compared near-field etching using both gas molecules and ions in liquid phase. Using two-dimensional Fourier analysis, we found

• that near-field etching is an effective way to etch on the scale of less than 10 nm for both wet and dry etching techniques. In addition, near-field dry etching may be effective for the selective etching of nanoscale structures with large mean free path values. Keywords: Angstrom-scale flatness

Synthesis and characterization of noble metal–titania core–shell nanostructures with tunable shell thickness

• Bartosz Bartosewicz,
• Marta Michalska-Domańska,
• Malwina Liszewska,
• Dariusz Zasada and
• Bartłomiej J. Jankiewicz

Beilstein J. Nanotechnol. 2017, 8, 2083–2093, doi:10.3762/bjnano.8.208

• . All purchased chemicals were used as received without further purification. Ultrapure deionized (DI) water (18.2 MΩ·cm at 25 °C, Hydrolab, Poland) was used throughout the experiments. All glassware was treated with titania etching solution (HF/HNO3/H2O = 1:4:15 v/v/v) for 5 min and rinsed with DI

A systematic study of the controlled generation of crystalline iron oxide nanoparticles on graphene using a chemical etching process

• Peter Krauß,
• Jörg Engstler and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2017, 8, 2017–2025, doi:10.3762/bjnano.8.202

• without the need for any additional post-processing. During the course of our transfer studies, we found that the etching process that is usually employed can lead to contamination of the graphene layer with the Faradaic etchant component FeCl3, resulting in the deposition of iron oxide FexOy

• substrate [11][12][13]. A major challenge towards the usage of graphene is the isolation from this planar metal substrate [14][15][16]. Besides mechanical exfoliation [17][18] and electrochemical delamination [19][20][21], polymer-supported etching of the substrate is generally used to transfer CVD graphene

• onto various substrates [14][22][23][24]. The transfer of CVD graphene by chemical etching is based on the redox reaction between the metal catalyst and an oxidizing agent in aqueous solution [22][23][25][26][27][28]. As the metal dissolves in the etchant solution, graphene remains floating on the

Evaluation of preparation methods for suspended nano-objects on substrates for dimensional measurements by atomic force microscopy

• Petra Fiala,
• Daniel Göhler,
• Benno Wessely,
• Michael Stintz,
• Giovanni Mattia Lazzerini and
• Andrew Yacoot

Beilstein J. Nanotechnol. 2017, 8, 1774–1785, doi:10.3762/bjnano.8.179

• were used in this study for the characterization of the preparation methods. The chosen nano-objects belong to the material group that was identified as important for risk assessment or as reference nanomaterials [9]. The preparations were performed by means of hydrophilic track etching membranes made

• . During the pre-conditioning of the substrates, the track etching membranes were rinsed with ultrapure water, and the silicon substrates were cleaned using either a wet chemical cleaning procedure or a dry cleaning procedure. The wet cleaning procedure was performed in accordance with the first step of

• etching membranes (Membrane Filtration) and accordingly on Si and Si coated substrates (others) relating to their preparation quality grade. Results of AFM sharp tip measurements Figure 8 provides exemplarily one AFM result concerning the height measurement of spherical SiO2 particles (100 nm) on Si