Heat-induced morphological changes in silver nanowires deposited on a patterned silicon substrate

• Elyad Damerchi,
• Sven Oras,
• Edgars Butanovs,
• Allar Liivlaid,
• Mikk Antsov,
• Boris Polyakov,
• Annamarija Trausa,
• Veronika Zadin,
• Andreas Kyritsakis,
• Loïc Vidal,
• Karine Mougin,
• Siim Pikker and
• Sergei Vlassov

Beilstein J. Nanotechnol. 2024, 15, 435–446, doi:10.3762/bjnano.15.39

• indium tin oxide (ITO), which currently serves as the industry standard for transparent conductive films, the Ag NW network is significantly more mechanically flexible and offers a broader optical transmittance range that extends well beyond the visible region [13][14]. Another related application of Ag

CdSe/ZnS quantum dots as a booster in the active layer of distributed ternary organic photovoltaics

• Gabriela Lewińska,
• Piotr Jeleń,
• Zofia Kucia,
• Maciej Sitarz,
• Łukasz Walczak,
• Bartłomiej Szafraniak,
• Jerzy Sanetra and
• Konstanty W. Marszalek

Beilstein J. Nanotechnol. 2024, 15, 144–156, doi:10.3762/bjnano.15.14

• diagram of a potential solar cell with aluminum and indium tin oxide (ITO) electrodes is presented in Figure 10. The HOMO was determined using the UPS spectrum of the valence bands for all samples. The lowest unoccupied molecular orbital (LUMO) was determined by subtracting the energy gap from the HOMO

A combined gas-phase dissociative ionization, dissociative electron attachment and deposition study on the potential FEBID precursor [Au(CH₃)₂Cl]₂

• Elif Bilgilisoy,
• Ali Kamali,
• Thomas Xaver Gentner,
• Gerd Ballmann,
• Sjoerd Harder,
• Hans-Peter Steinrück,
• Hubertus Marbach and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2023, 14, 1178–1199, doi:10.3762/bjnano.14.98

• apparently the same, it is surprising that no Sn impurities were reported in the deposits made under HV. As the information on the synthesis route is limited in the HV study reported, we can only speculate that a different methylation agent may have been used (i.e., one that did not contain tin). An

Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone

• Kristjan Kalam,
• Peeter Ritslaid,
• Tanel Käämbre,
• Aile Tamm and
• Kaupo Kukli

Beilstein J. Nanotechnol. 2023, 14, 1085–1092, doi:10.3762/bjnano.14.89

• implied the formation of single-phase oxide in the films grown at temperatures above 300 °C. Appropriateness of the mentioned precursor system to the preparation of SnO2 films was established. Keywords: atomic layer deposition; tin oxide; tin tetraiodide; Introduction Atomic layer-deposited SnO2 films

• authors aim to provide a comprehensive description of said process and the resulting films. Experimental The films studied in this work were grown in a low-pressure flow-type ALD reactor [16]. Tin(IV) iodide, SnI4 (99.999%, Sigma-Aldrich), used as the tin precursor was evaporated at 83 °C from a half-open

• , stabilized at an appreciably low level of 0.7–0.8 atom % (Figure 7). Since the relatively high oxygen content below a deposition temperature of 200 °C did not arise from increased oxygen amounts in the film, but from decreased tin amounts, one can propose that, at the lowest deposition temperatures, I2O5

Ni, Co, Zn, and Cu metal-organic framework-based nanomaterials for electrochemical reduction of CO₂: A review

• Ha Huu Do and
• Hai Bang Truong

Beilstein J. Nanotechnol. 2023, 14, 904–911, doi:10.3762/bjnano.14.74

• catalyst for CO2RR. The author postulated that Co(II) is converted into Co(I), which acts as a redox center for the reduction of CO2 into CO (Figure 3c,d). Because of their poor conductivity, Co-MOFs are typically grown on conductive templates, such as fluorine-doped tin oxide (FTO), carbon cloth, and

Plasmonic nanotechnology for photothermal applications – an evaluation

• A. R. Indhu,
• L. Keerthana and
• Gnanaprakash Dharmalingam

Beilstein J. Nanotechnol. 2023, 14, 380–419, doi:10.3762/bjnano.14.33

Electrical and optical enhancement of ITO/Mo bilayer thin films via laser annealing

• Abdelbaki Hacini,
• Ahmad Hadi Ali,
• Nurul Nadia Adnan and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2022, 13, 1589–1595, doi:10.3762/bjnano.13.133

• 17.6 × 10−3 Ω−1 of the the annealed structure. The results indicate that the laser annealing could improve the efficiency of the transparent conductive layer, which can be potentially applied in optoelectronic devices. Keywords: indium tin oxide (ITO); laser annealing; molybdenum (Mo); Nd:YAG

• to improve the performance of optoelectronic devices. One of these materials is indium tin oxide (ITO), which combines high transparency with high conductivity [7][8]. However, a single layer of as-deposited ITO shows a high resistivity. Consequently, inserting a very thin metal film layer can

From a free electron gas to confined states: A mixed island of PTCDA and copper phthalocyanine on Ag(111)

• Alfred J. Weymouth,
• Emily Roche and
• Franz J. Giessibl

Beilstein J. Nanotechnol. 2022, 13, 1572–1577, doi:10.3762/bjnano.13.131

• mixed phase with a phthalocyanine molecule that exhibits different electrical properties, such as has been reported for a mixed phase of tin phthalocyanine (SnPc) with PTCDA [28]. SnPc acts very similarly to CuPc, except the aforementioned F-LUMO is not completely depleted but remains partially filled

Role of titanium and organic precursors in molecular layer deposition of “titanicone” hybrid materials

• Arbresha Muriqi and
• Michael Nolan

Beilstein J. Nanotechnol. 2022, 13, 1240–1255, doi:10.3762/bjnano.13.103

• widely used in ALD for the deposition of TiO2 and TiN films by thermal and plasma-enhanced processes [35][36]. As described above, TiCl4 and Ti(DMA)4 were successfully employed in MLD of titanicone films [30][33]. While TiCl4 is a small halide molecule that has Ti–Cl bonds, Ti(DMA)4 is a bulkier molecule

• the deposition of TiO2 [35] and TiN [36] ALD films and titanicone MLD films [33]. Ti(DMA)4 is a metalorganic precursor containing Ti–N bonds to the organic ligands, dimethylamino (DMA, N(CH3)2), and with a much larger molecular size when compared to TiCl4. It offers some advantages as a precursor

Temperature and chemical effects on the interfacial energy between a Ga–In–Sn eutectic liquid alloy and nanoscopic asperities

• Yujin Han,
• Pierre-Marie Thebault,
• Corentin Audes,
• Xuelin Wang,
• Haiwoong Park,
• Jian-Zhong Jiang and
• Arnaud Caron

Beilstein J. Nanotechnol. 2022, 13, 817–827, doi:10.3762/bjnano.13.72

• –substrate interfaces, which promotes the wetting of the gallium melt [14][15]. Similarly, room-temperature-liquid eutectic Ga–In and eutectic Ga–In–Sn alloys have been reported to reactively wet thin indium and tin foils [16]. Also in [16], the authors demonstrated that the wetting of the same liquid alloys

• and calculate the corresponding work of adhesion Wad as suggested in [19] for solid interfaces. The authors measured the adhesion between atomically smooth quasicrystalline surfaces of TiN-coated AFM tips in ultrahigh vacuum by analyzing the pull-off force during atomic force spectroscopy measurements

• that these contributions arose from contamination by the ambient, we excluded them from our calculations of the surface chemical composition. Figure 6 shows that the surface oxide on the melt mainly consists of gallium and tin oxides, with a minor contribution from indium oxide. After heating at 100 °C

Hierarchical Bi₂WO₆/TiO₂-nanotube composites derived from natural cellulose for visible-light photocatalytic treatment of pollutants

• Zehao Lin,
• Zhan Yang and
• Jianguo Huang

Beilstein J. Nanotechnol. 2022, 13, 745–762, doi:10.3762/bjnano.13.66

• ultrasonically dispersed in ethanol (1.0 mL) with the addition of a PVDF solution (100.0 μL, 10.0 mg·mL−1, using N-methylpyrrolidone as the solvent), which was then spin-coated on a conducting indium tin oxide (ITO) glass, followed by the calcination process at 100 °C for 24 h, giving the relevant working

Reliable fabrication of transparent conducting films by cascade centrifugation and Langmuir–Blodgett deposition of electrochemically exfoliated graphene

• Teodora Vićentić,
• Stevan Andrić,
• Vladimir Rajić and
• Marko Spasenović

Beilstein J. Nanotechnol. 2022, 13, 666–674, doi:10.3762/bjnano.13.58

• substrates with dimensions of ca. 2 cm × 1 cm (Figure 2a). Although a great number of different types of substrate materials have been used, such as silica [37], chromium [38], tin [39], silver [40], or platinum [41], glass substrates were used in this paper. Glass is generally a popular choice, not just

Fabrication and testing of polymer microneedles for transdermal drug delivery

• Vahid Ebrahiminejad,
• Zahra Faraji Rad,
• Philip D. Prewett and
• Graham J. Davies

Beilstein J. Nanotechnol. 2022, 13, 629–640, doi:10.3762/bjnano.13.55

• photoresist was drop cast onto an indium tin oxide (ITO) glass substrate prior to starting the printing process. A dip-in laser lithography (DiLL) objective (25× magnification, NA = 0.8) was used for printing, after which the MN array was washed in propylene glycol methyl ether acetate (PGMEA) for 10 minutes

Influence of thickness and morphology of MoS₂ on the performance of counter electrodes in dye-sensitized solar cells

• Lam Thuy Thi Mai,
• Hai Viet Le,
• Ngan Kim Thi Nguyen,
• Van La Tran Pham,
• Thu Anh Thi Nguyen,
• Nguyen Thanh Le Huynh and
• Hoang Thai Nguyen

Beilstein J. Nanotechnol. 2022, 13, 528–537, doi:10.3762/bjnano.13.44

• disulfide (MoS2) was prepared on substrates coated with fluorine-doped tin oxide (FTO) to substitute the platinum counter electrode (CE) for dye-sensitized solar cells (DSSCs). Herein, we synthesized layered and honeycomb-like MoS2 thin films via the cyclic voltammetry (CV) route. Thickness and morphology

• , 25 μm), 18NR-T transparent titania paste (particle size of 20 nm), 18NR-AO active opaque titania paste (particle sizes of 20 and 450 nm), fluorine-doped tin oxide (FTO, TEC8 glass plates, 8 Ω·cm−2, 2.2 mm thickness), and N719 industry standard dye (N719) were purchased from Dyesol (Australia). All

Selected properties of Al_xZn_yO thin films prepared by reactive pulsed magnetron sputtering using a two-element Zn/Al target

• Witold Posadowski,
• Artur Wiatrowski,
• Jarosław Domaradzki and
• Michał Mazur

Beilstein J. Nanotechnol. 2022, 13, 344–354, doi:10.3762/bjnano.13.29

• : aluminium zinc oxide; magnetron sputtering; thin film; transparent conducting oxide; transparent electronics; Introduction Aluminium-doped zinc oxide (AZO) is a potential alternative to indium tin oxide (ITO) for transparent conducting oxide (TCO) electrodes in transparent electronic and photovoltaic

Investigation of a memory effect in a Au/(Ti–Cu)Ox-gradient thin film/TiAlV structure

• Damian Wojcieszak,
• Jarosław Domaradzki,
• Michał Mazur,
• Tomasz Kotwica and
• Danuta Kaczmarek

Beilstein J. Nanotechnol. 2022, 13, 265–273, doi:10.3762/bjnano.13.21

• ]. The most commonly used material in resistive switching devices is TiO2−x [33][34][35][36][37][38]. In addition to the oxide layers, the material used for metal electrodes plays another crucial role in the resistive switching mechanism. Usually, materials such as Au, Ag, Ni, Ti, W, TiN, or ITO are used

Engineered titania nanomaterials in advanced clinical applications

• Padmavati Sahare,
• Paulina Govea Alvarez,
• Juan Manual Sanchez Yanez,
• Gabriel Luna-Bárcenas,
• Samik Chakraborty,
• Sujay Paul and
• Miriam Estevez

Beilstein J. Nanotechnol. 2022, 13, 201–218, doi:10.3762/bjnano.13.15

• , titanium nitride (TiN) coating has been licensed by the FDA to be used in titanium alloy components for enhancing durability and corrosion resistance in surgical steel, orthodontics, hip prostheses, and cardiovascular biomaterials [69]. A titania/glass ceramic (TiGC) scaffold was fabricated and coated with

A comprehensive review on electrospun nanohybrid membranes for wastewater treatment

• Senuri Kumarage,
• Imalka Munaweera and
• Nilwala Kottegoda

Beilstein J. Nanotechnol. 2022, 13, 137–159, doi:10.3762/bjnano.13.10

Tin dioxide nanomaterial-based photocatalysts for nitrogen oxide oxidation: a review

• Viet Van Pham,
• Hong-Huy Tran,
• Thao Kim Truong and
• Thi Minh Cao

Beilstein J. Nanotechnol. 2022, 13, 96–113, doi:10.3762/bjnano.13.7

• ] (see Equations 1–10). Recently, research on tin dioxide (SnO2) materials has increased significantly, which expresses the potential of SnO2 materials for the scientific community (Figure 2a). SnO2 is one of the most extensively investigated n-type semiconductors. It is known as tin(VI) oxide or stannic

• oxide (not to be confused with stannous oxide with tin in the oxidation state of 2+ [13], also known as cassiterite [14]. SnO2 materials have many interesting properties. For instance, the structure and electronic structure can be manipulated easily due to the highly tunable valence state and oxygen

• is the most common surface, and it is also thermodynamically the most stable [48]. In the rutile phase of SnO2 in Figure 4b, the (110) plane contains all surface bridging oxygens (1), bridging OVs (2), and oxygen coordinated three- or fivefold (3, 4) with surface tin atoms (Sn 5f). The dual valency

Sputtering onto liquids: a critical review

• Anastasiya Sergievskaya,
• Adrien Chauvin and
• Stephanos Konstantinidis

Beilstein J. Nanotechnol. 2022, 13, 10–53, doi:10.3762/bjnano.13.2

• reported in [56] where zinc (Zn) and tin/copper (Sn/Cu) targets are both co-sputtered in a reactive H2S/Ar reactive plasma for the synthesis of Cu2ZnSnS4 (CZTS) coatings. In the case of reactive sputtering, MFCs manage the flow (usually expressed in standard cubic centimeters per minute, sccm). This is a

• publications, besides Ti+, molecules such as TiN+ or TiO+ and TiO2+ but also reactive gas molecules, atoms, and ions (N2, N2+, N+) were detected in the gas phase. Interestingly, AuO molecules were observed when sputtering Au in an Ar/O2 mixture [65], highlighting the rich gas-phase chemistry of sputtering

Enhancement of the piezoelectric coefficient in PVDF-TrFe/CoFe₂O₄ nanocomposites through DC magnetic poling

• Marco Fortunato,
• Alessio Tamburrano,
• Maria Paola Bracciale,
• Maria Laura Santarelli and
• Maria Sabrina Sarto

Beilstein J. Nanotechnol. 2021, 12, 1262–1270, doi:10.3762/bjnano.12.93

• for 30 min and then spin coated (30 s with a spin speed of 2000 rpm) onto polyethylene terephthalate/indium tin oxide (PET/ITO, Sigma-Aldrich, Rs = 60 Ω/sq). The obtained melt was cured in the oven at 120 °C for 2 h. After curing, the nanostructured thin film was placed over a heated mat reaching 65

Morphology-driven gas sensing by fabricated fractals: A review

• Vishal Kamathe and
• Rupali Nagar

Beilstein J. Nanotechnol. 2021, 12, 1187–1208, doi:10.3762/bjnano.12.88

• to some excellent articles on hierarchical gas sensors that address such geometries [8][30][33][37]. Tin oxide-based fractals Yin et al. reported SnO2 nanoparticles with and without platinum (Pt) decoration synthesized using a sol–gel hydrothermal technique for gas sensing applications [63]. Figure

• pits. The self-organization of structures was attributed to tin chloride, which led to a larger size of the pits, while copper oxide led to the formation of hillocks in the film. The D values of the samples were in the range of 2.00–2.24. For the Sn/Cu = 6 ratio, the fractal dimension was 2.0, and the

• . Gracheva and co-workers prepared gas-sensitive fractal structures based on SnO2 and silicon dioxide (SiO2) by a sol–gel technique [57][69][70]. The evolution of fractal aggregates of tin and silicon dioxides resulted in the formation of spherical, labyrinth, and percolation network structures. The

First-principles study of the structural, optoelectronic and thermophysical properties of the π-SnSe for thermoelectric applications

• Muhammad Atif Sattar,
• Najwa Al Bouzieh,
• Maamar Benkraouda and
• Noureddine Amrane

Beilstein J. Nanotechnol. 2021, 12, 1101–1114, doi:10.3762/bjnano.12.82

• Abstract Tin selenide (SnSe) has thermoelectric (TE) and photovoltaic (PV) applications due to its exceptional advantages, such as the remarkable figure of merit (ZT ≈ 2.6 at 923 K) and excellent optoelectronic properties. In addition, SnSe is nontoxic, inexpensive, and relatively abundant. These aspects

• make SnSe of great practical importance for the next generation of thermoelectric devices. Here, we report structural, optoelectronic, thermodynamic, and thermoelectric properties of the recently experimentally identified binary phase of tin monoselenide (π-SnSe) by using the density functional theory

• is exceptionally promising for the next generation of photovoltaic and thermoelectric devices at room and high temperatures. Keywords: density functional theory (DFT); electronic properties; lattice thermal conductivity; optical properties; thermodynamic properties; thermoelectric properties; tin

Assessment of the optical and electrical properties of light-emitting diodes containing carbon-based nanostructures and plasmonic nanoparticles: a review

• Keshav Nagpal,
• Erwan Rauwel,
• Frédérique Ducroquet and
• Protima Rauwel

Beilstein J. Nanotechnol. 2021, 12, 1078–1092, doi:10.3762/bjnano.12.80

• a large scale. For this purpose, transparent conducting oxides (TCO), such as thin films of In2O3, SnO2, ZnO, and their mixtures have been extensively studied [30][31][32][33][34]. The most widely studied TCO is indium tin oxide (ITO), which possesses good physical properties, such as high optical

Progress and innovation of nanostructured sulfur cathodes and metal-free anodes for room-temperature Na–S batteries

• Marina Tabuyo-Martínez,
• Bernd Wicklein and
• Pilar Aranda

Beilstein J. Nanotechnol. 2021, 12, 995–1020, doi:10.3762/bjnano.12.75

• safely in intermetallic anodes, from which Na ions are reversibly released during discharging and charging processes. Among the most common alloying elements in SiBs are tin [74], antimony [75], and to a lesser degree phosphorous [76]. These elements can be either directly sodiated to form Na alloys or

• anode delivered 625 mAh·g−1 [26]. Also, silicon itself is also another promising material for sodium alloy anodes as its theoretical Na storage capacity of 954 mAh·g−1 (NaSi phase) even exceeds the one of tin (847 mAh·g−1) [26]. The low electrochemical reactivity and structural stability of crystalline