Charge transport in organic nanocrystal diodes based on rolled-up robust nanomembrane contacts

• Vineeth Kumar Bandari,
• Lakshmi Varadharajan,
• Longqian Xu,
• Abdur Rehman Jalil,
• Mirunalini Devarajulu,
• Pablo F. Siles,
• Feng Zhu and
• Oliver G. Schmidt

Beilstein J. Nanotechnol. 2017, 8, 1277–1282, doi:10.3762/bjnano.8.129

• contacts. The nanocrystals consist of vanadyl phthalocyanine (VOPc) and copper hexadecafluorophthalocyanine (F16CuPc) heterojunctions. The temperature dependent current–voltage behaviors were investigated to unveil the charge transport properties of the nanocrystals. As most of the well-studied charge

• the charge transport properties of the crystalline nanopyramids, an electrical characterization is performed by measuring the current–voltage (I–V) characteristics. As shown in Figure 2a, the strong charge transfer (CT) between VOPc and F16CuPc causes the heterojunction nanopyramids with double

• shown in Figure 3a. Similar to the current–voltage characteristics at room temperature, the current under forward bias remains dominant also at lower temperatures. By plotting the temperature dependent current behavior (ln(I)–1000/T) under different bias we obtain two distinct regions with different

Ultrasmall magnetic field-effect and sign reversal in transistors based on donor/acceptor systems

• Thomas Reichert and
• Tobat P. I. Saragi

Beilstein J. Nanotechnol. 2017, 8, 1104–1114, doi:10.3762/bjnano.8.112

• magnetic field, reminiscence effects of the electromagnet and the uncertainty of our magnetic-field sensor, the uncertainty of the stated magnetic-field strength is ±80 µT. Current–voltage measurements were performed by using a Keithley 4200 semiconductor characterization system equipped with preamplifiers

Analysis and modification of defective surface aggregates on PCDTBT:PCBM solar cell blends using combined Kelvin probe, conductive and bimodal atomic force microscopy

• Hanaul Noh,
• Alfredo J. Diaz and
• Santiago D. Solares

Beilstein J. Nanotechnol. 2017, 8, 579–589, doi:10.3762/bjnano.8.62

• Information Supporting Information contains detailed experimental setup, image cross-correlation, analysis of an aged sample, time evolution of surface aggregates, aggregate removal during KPFM scans, a typical current–voltage curve, cantilever calibration, comparison of contact-mode and bimodal AFM

Anodization-based process for the fabrication of all niobium nitride Josephson junction structures

• Massimiliano Lucci,
• Ivano Ottaviani,
• Matteo Cirillo,
• Fabio De Matteis,
• Roberto Francini,
• Vittorio Merlo and
• Ivan Davoli

Beilstein J. Nanotechnol. 2017, 8, 539–546, doi:10.3762/bjnano.8.58

• surface and their stoichiometry. A multilayer superconductor/insulator/superconductor was obtained by successive depositions and patterned by means of the proposed anodization technique to obtain a NbN/AlN/NbN Josephson junction the current–voltage characteristic of which was measured in a liquid helium

• replacement with oxygen is observed from the measurements and a rough stoichiometry can be extrapolated compatible with Nb2O5. Tunnel junctions In Figure 11a we show the current–voltage characteristic of a Josephson-junction measured at 4.2 K. The three-layer junction (NbN/AlN/NbN) is formed by three films of

• the spectra is observed that only niobium and nitrogen are present before the process. After the oxidation process the nitrogen was completely replaced with oxygen. a) Current–voltage characteristic for NbN Josephson junction and b) diffraction pattern obtained measuring Jc as function of the applied

Copper atomic-scale transistors

• Fangqing Xie,
• Maryna N. Kavalenka,
• Moritz Röger,
• Daniel Albrecht,
• Hendrik Hölscher,
• Jürgen Leuthold and
• Thomas Schimmel

Beilstein J. Nanotechnol. 2017, 8, 530–538, doi:10.3762/bjnano.8.57

• converted to a voltage (Uout) using the current–voltage converter circuit consisting of the copper point-contact, a resistor (R) and an operational amplifier (Analog Devices, OP07) (Figure 5a). The wide supply and input voltage ranges of the operational amplifier are ±15 V and ±14 V, respectively. The

Performance of natural-dye-sensitized solar cells by ZnO nanorod and nanowall enhanced photoelectrodes

• Saif Saadaoui,
• Mohamed Aziz Ben Youssef,
• Moufida Ben Karoui,
• Rached Gharbi,
• Emanuele Smecca,
• Vincenzina Strano,
• Salvo Mirabella,
• Alessandra Alberti and
• Rosaria A. Puglisi

Beilstein J. Nanotechnol. 2017, 8, 287–295, doi:10.3762/bjnano.8.31

• concentration three times, we increase the loaded dye in the ZnO NR layer and we clearly observed the absorbance peak related to the collected dye in the photoanode side at 665 nm. The prepared photoanode was assembled with a platinized counter electrode. The current–voltage (I–V) measurements were carried out

• electrolyte (SOLARONIX). The used henna and mallow powders were prepared in-house by drying henna and mallow plants. Afterwards, the dried plants were milled and sieved to obtain the final powder. Current–voltage characteristics and layer conductivity were measured using a computer-controlled Keithley 4200

• in dye for 23 h, in the first concentration, and after 37 h in the second concentration. Current–voltage measurements (a) assembled cells with ZnO NWs as a layer in the photoanode side with and without a TiO2 blocking layer annealed at 200 °C, 300 °C, and without annealing using different ambient gas

Graphene–polymer coating for the realization of strain sensors

• Carmela Bonavolontà,
• Carla Aramo,
• Massimo Valentino,
• Giampiero Pepe,
• Sergio De Nicola,
• Gianfranco Carotenuto,
• Angela Longo,
• Mariano Palomba,
• Simone Boccardi and
• Carosena Meola

Beilstein J. Nanotechnol. 2017, 8, 21–27, doi:10.3762/bjnano.8.3

• constitutes the maximum achievable performance of silicon-based sensors. The electrical resistance and mechanical properties of the graphene-coated PMMA slat were investigated by current–voltage (I–V) measurements and micro-Raman spectroscopy (μ-RS) during bending tests. Moreover, infrared thermographic

• carried out under unload and maximum load conditions. For this purpose a two-probe configuration based on a picoammeter (Keithley, 6487) has been used to measure the current−voltage (I−V) curves between the electrodes located on A1 and A2 areas, as shown in Figure 4. The same setup was used to monitor

• . The effect of the bending on the electrical properties of the PMMA/graphene compound were investigated by measuring the current–voltage (I–V) using the electrical connection shown Figure 4. The measurement was performed in presence of a voltage of 5 V. Figure 6 reports the results of the current

Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering

• Sergei N. Chebotarev,
• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Elena N. Zhivotova,
• Georgy A. Erimeev and
• Marina L. Lunina

Beilstein J. Nanotechnol. 2017, 8, 12–20, doi:10.3762/bjnano.8.2

• quantum dots into the continuum of the conduction band. However, photoluminescence can only provide information about the energy levels in quantum dots but not about the transport mechanisms. For this purpose, we examined dark current–voltage characteristics of the samples with different doping levels. It

• is important to note that we doped not the quantum dots but the gallium arsenide spacer layers. Dark I–V measurements were carried out at a temperature of 90 K. The obtained results were shown in Figure 9. Two regions can be distinguished in the current–voltage curves. The first region is from 0.0 to

Solvent-mediated conductance increase of dodecanethiol-stabilized gold nanoparticle monolayers

• Patrick A. Reissner,
• Jean-Nicolas Tisserant,
• Antoni Sánchez-Ferrer,
• Raffaele Mezzenga and
• Andreas Stemmer

Beilstein J. Nanotechnol. 2016, 7, 2057–2064, doi:10.3762/bjnano.7.196

• conductance of such devices was measured by acquiring I–V curves before and after immersing them in pure solvents. All devices exhibit a linear current–voltage response before and after solvent immersion as shown in Figure 1a for a randomly picked device. The differential conductance value of each device is

• is provided in Supporting Information File 1. (a) Current–voltage relation of 20 µm × 10 µm gold nanoparticle monolayer before (black) and after (red) immersion in EtOH. The inset shows an optical image of a representative device. (b) Conductance values measured for 44 devices and their mean values

Layered composites of PEDOT/PSS/nanoparticles and PEDOT/PSS/phthalocyanines as electron mediators for sensors and biosensors

• Celia García-Hernández,
• Cristina García-Cabezón,
• Fernando Martín-Pedrosa,
• José Antonio De Saja and
• María Luz Rodríguez-Méndez

Beilstein J. Nanotechnol. 2016, 7, 1948–1959, doi:10.3762/bjnano.7.186

• and resistivity were measured with the four-point probe test (Table 1). The current–voltage curves obtained from PEDOT/PSS and PEDOT/PSS/EM electrodes exhibited a good linear fit with correlation coefficients higher than 0.999. It has been reported that the addition of different dopants to an aqueous

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

• Ivan Shtepliuk,
• Jens Eriksson,
• Volodymyr Khranovskyy,
• Tihomir Iakimov,
• Anita Lloyd Spetz and
• Rositsa Yakimova

Beilstein J. Nanotechnol. 2016, 7, 1800–1814, doi:10.3762/bjnano.7.173

• graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current–voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emission theory. Extracted values of the Schottky barrier height and the ideality

• current–voltage characteristics, which can be used as the sensor signal. The shift of the I–V curves can be calibrated to measure the concentration of heavy metals. It is important to emphasize that the key factors determining the performance of the graphene-based Schottky barrier diode as sensing

• conducting silver glue deposited on the Pd contact. As a back ohmic contact to SiC a Pd metallic electrode was also used. Figure 1 is a schematic illustration of the Pd/graphene/4H-SiC/Pd vertical device. The current-voltage (I–V) characteristics of the fabricated devices were measured and analyzed in order

Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions

• Christoph Schreyvogel,
• Vladimir Polyakov,
• Sina Burk,
• Helmut Fedder,
• Andrej Denisenko,
• Felipe Fávaro de Oliveira,
• Ralf Wunderlich,
• Jan Meijer,
• Verena Zuerbig,
• Jörg Wrachtrup and
• Christoph E. Nebel

Beilstein J. Nanotechnol. 2016, 7, 1727–1735, doi:10.3762/bjnano.7.165

• fabrication of the in-plane diamond Schottky diode is finished, which is shown schematically in Figure 2a. The current–voltage characteristic of this diode, measured at ambient conditions, shows very good Schottky properties (Figure 2b). Results and Discussion Active charge-state switching As already

• quenched due to the conversion from the fluorescent state NV− to NV+, i.e., only a PL-background of the surface is visible. In-plane Schottky diode from diamond. (a) Schematic figure of an in-plane Al Schottky diode on an H-terminated diamond surface. (b) The current–voltage properties of the fabricated in

Thickness-modulated tungsten–carbon superconducting nanostructures grown by focused ion beam induced deposition for vortex pinning up to high magnetic fields

• Ismael García Serrano,
• Javier Sesé,
• Isabel Guillamón,
• Hermann Suderow,
• Sebastián Vieira,
• Manuel Ricardo Ibarra and
• José María De Teresa

Beilstein J. Nanotechnol. 2016, 7, 1698–1708, doi:10.3762/bjnano.7.162

• samples with pitch 100 nm and 140 nm. Supporting Information Supporting Information File 152: Current–voltage (I vs V) behavior. Assignment of the minima to the matching modes and fits of the resistance–magnetic field curves to thermal-activated behaviour (Equation 4 in the main manuscript

Sb₂S₃ grown by ultrasonic spray pyrolysis and its application in a hybrid solar cell

• Erki Kärber,
• Atanas Katerski,
• Ilona Oja Acik,
• Arvo Mere,
• Valdek Mikli and
• Malle Krunks

Beilstein J. Nanotechnol. 2016, 7, 1662–1673, doi:10.3762/bjnano.7.158

• CBD or spin coating, for growing Sb2S3. Properties of the TiO2/Sb2S3 nanoparticle/P3HT solar cell The highest efficiencies of each cell were observed after being exposed to AM1.5 illumination for up to 45 min, varying from sample to sample. The general trends in the evolution of the current–voltage

• latter, is presented in Figure 6. Current–voltage (I–V) parameters The principal characteristics of record solar cells with a spray-grown Sb2S3 absorber prepared using Sb/S of 1:6 in the precursor solution and seven spray cycles are presented in the first two rows of Table 1. The VOC of about 618 mV is

• accelerating voltage of 10 kV. The same SEM system was used for visualization of the morphology of the layers and of the cross-section of the solar cells at an electron beam accelerating voltage of 4 kV. Current–voltage scans of the solar cells were used to obtain the principal characteristics of the solar

Fingerprints of a size-dependent crossover in the dimensionality of electronic conduction in Au-seeded Ge nanowires

• Maria Koleśnik-Gray,
• Gillian Collins,
• Justin D. Holmes and
• Vojislav Krstić

Beilstein J. Nanotechnol. 2016, 7, 1574–1578, doi:10.3762/bjnano.7.151

• with 300 nm thermally grown SiO2 on top and contacted lithographically with Ag electrodes [14] in a four-point-probe configuration (Figure 1c). The Si backside of the chip was used as global backgate. For each NW, four-point current–voltage and transfer characteristics were taken under ambient

• -type charge transport. Inset: four-point current–voltage characteristic of the same NW. Radius-dependent charge transport properties in Ge NWs. (a) Electrical conductivity, (b) mobility and (c) charge carrier density as function of the NW radius R. Dotted lines in (a) and (b) are a guide to the eye

The effect of dry shear aligning of nanotube thin films on the photovoltaic performance of carbon nanotube–silicon solar cells

• Benedikt W. Stolz,
• Daniel D. Tune and
• Benjamin S. Flavel

Beilstein J. Nanotechnol. 2016, 7, 1486–1491, doi:10.3762/bjnano.7.141

• photovoltaic performance of devices produced with and without dry shear aligning is compared. Keywords: absorbance; carbon nanotubes; current-voltage; dry shear aligning; order parameter; Introduction During the last decade or so, the potential benefits of using carbon nanotubes in solar cells has been

• . Before testing, all cells were treated sequentially with 2% HF, SOCl2 and 2% HF again. This treatment sequence removes the thin oxide from the silicon surface as well as p-doping the nanotubes and dramatically increasing the conductivity of the nanotube films. Current–voltage data was taken from cells in

Ammonia gas sensors based on In₂O₃/PANI hetero-nanofibers operating at room temperature

• Qingxin Nie,
• Zengyuan Pang,
• Hangyi Lu,
• Yibing Cai and
• Qufu Wei

Beilstein J. Nanotechnol. 2016, 7, 1312–1321, doi:10.3762/bjnano.7.122

• morphology of In(NO3)3/PVP, In2O3/PANI composite nanofibers and pure PANI were investigated by scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), transmission electron microscopy (TEM) and current–voltage (I–V) measurements. The gas sensing properties

• and tending to be regularly arrayed [16]. As a result, hollow structure of In2O3 nanofibers was formed during the annealing process. Current–voltage (I–V) measurements of PANI, In2O3/PANI-1, In2O3/PANI-2 and In2O3/PANI-3 nanofibers were carried out at room temperature. As shown in Figure 4, the I–V

• nanofibers. (d) TEM image of In2O3 nanofibers. Current–Voltage (I–V) characteristics of pure PANI and In2O3/PANI nanofibers. Dynamic response of sensors based on (a) pure PANI, (b) In2O3/PANI nanofibers-1, (c) In2O3/PANI nanofibers-2 and (d) In2O3/PANI nanofibers-3 towards 100–1000 ppm NH3 at room

Photocurrent generation in carbon nanotube/cubic-phase HfO₂ nanoparticle hybrid nanocomposites

• Protima Rauwel,
• Augustinas Galeckas,
• Martin Salumaa,
• Frédérique Ducroquet and
• Erwan Rauwel

Beilstein J. Nanotechnol. 2016, 7, 1075–1085, doi:10.3762/bjnano.7.101

• capping layer. Photocurrent response For the electrical characterization, the nanocomposite is deposited on a glass slide and contacted using a micromanipulator manual probe station as shown in inset of Figure 5a. The dark current–voltage characteristic is mostly linear, as expected for an ohmic

Role of solvents in the electronic transport properties of single-molecule junctions

• Katharina Luka-Guth,
• Sebastian Hambsch,
• Andreas Bloch,
• Philipp Ehrenreich,
• Bernd Michael Briechle,
• Filip Kilibarda,
• Torsten Sendler,
• Dmytro Sysoiev,
• Thomas Huhn,
• Artur Erbe and
• Elke Scheer

Beilstein J. Nanotechnol. 2016, 7, 1055–1067, doi:10.3762/bjnano.7.99

• width, conductance histograms as well as current–voltage characteristics of narrow gaps and discuss them in terms of the Simmons model, which is the standard model for describing transport via tunnel barriers, and the resonant single-level model, often applied to single-molecule junctions. One of our

• conclusions is that stable junctions may form from solvents as well and that both conductance–distance traces and current–voltage characteristics have to be studied to distinguish between contacts of solvent molecules and of molecules under study. Keywords: electrochemical environment; mechanically

• the molecules under study. However, often the current–voltage (I–V) characteristics of these electrolyte tunnel junctions have shapes that are similar to those found in single-molecule junctions and are therefore not easy to distinguish from each other [11]. In principle this would be possible by

NO gas sensing at room temperature using single titanium oxide nanodot sensors created by atomic force microscopy nanolithography

• Li-Yang Hong and
• Heh-Nan Lin

Beilstein J. Nanotechnol. 2016, 7, 1044–1051, doi:10.3762/bjnano.7.97

• spectroscopy analysis confirmed that the Ti was oxidized [32]. The compositions of the NDs, however, cannot be exactly determined and are simply TiOx. Also, sensor A has a larger resistance due to the smaller ND size. (The current–voltage relationships of the two ND sensors before NO sensing are shown in

• reported in the literature. Note that the listed responses are based on our present definition S = ΔR/R0 and some are different from the original values in the references. Supporting Information Supporting Information features the current–voltage curves of sensors A and B before NO sensing, the

Thermo-voltage measurements of atomic contacts at low temperature

• Ayelet Ofarim,
• Bastian Kopp,
• Thomas Möller,
• León Martin,
• Johannes Boneberg,
• Paul Leiderer and
• Elke Scheer

Beilstein J. Nanotechnol. 2016, 7, 767–775, doi:10.3762/bjnano.7.68

• duration of 4 ms at a certain position (e.g., the one shown in Figure 2). For low voltages the current–voltage characteristic (I–V) is linear, such that G = I/V can be determined from the individual V and I data. The measurement resolution is in the order of 10−2G0. Figure 5a shows the voltage during

Charge and heat transport in soft nanosystems in the presence of time-dependent perturbations

• Alberto Nocera,
• Carmine Antonio Perroni,
• Vincenzo Marigliano Ramaglia and
• Vittorio Cataudella

Beilstein J. Nanotechnol. 2016, 7, 439–464, doi:10.3762/bjnano.7.39

• one of the main results for the current–voltage characteristic given by the adiabatic approach at zero temperature. In Figure 5, the I–Vbias characteristic for VG = EP = 2 is shown comparing the adiabatic approach adopted in this paper (squares), with the limit where the mass of the oscillator is

Invariance of molecular charge transport upon changes of extended molecule size and several related issues

• Ioan Bâldea

Beilstein J. Nanotechnol. 2016, 7, 418–431, doi:10.3762/bjnano.7.37

• spurious structures in nonlinear ranges of current–voltage curves. Keywords: extended Hückel method; Landauer formalism; molecular electronics; negative differential resistance; wide- and flat-band approximation; Introduction Even restricted to the steady-state regime, studying charge transport through

Synthesis and applications of carbon nanomaterials for energy generation and storage

• Marco Notarianni,
• Jinzhang Liu,
• Kristy Vernon and
• Nunzio Motta

Beilstein J. Nanotechnol. 2016, 7, 149–196, doi:10.3762/bjnano.7.17

Charge injection and transport properties of an organic light-emitting diode

• Peter Juhasz,
• Juraj Nevrela,
• Michal Micjan,
• Miroslav Novota,
• Jan Uhrik,
• Lubica Stuchlikova,
• Jan Jakabovic,
• Ladislav Harmatha and
• Martin Weis

Beilstein J. Nanotechnol. 2016, 7, 47–52, doi:10.3762/bjnano.7.5

• investigated by steady-state current–voltage technique and impedance spectroscopy at various temperatures to obtain activation energies of charge injection and transport processes. Good agreement of activation energies obtained by steady-state and frequency-domain was used to analyze their contributions to the

• steady-state current–voltage characteristics recorded at various temperatures have been used to evaluate the activation energy of electric conductivity. Obtained results are compared with energy band diagram to identify major energy barriers limiting the current. Experimental The study of the charge

• density and carrier mobility, it reflects the impact of charge traps on the carrier transport as well as that of energy barriers on the carrier injection. Figure 5b depicts the voltage dependence of the activation energies estimated from the steady-state current–voltage and impedance spectroscopy