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Search for "dielectrics" in Full Text gives 48 result(s) in Beilstein Journal of Nanotechnology.

Silver-based SERS substrates fabricated using a 3D printed microfluidic device

  • Phommachith Sonexai,
  • Minh Van Nguyen,
  • Bui The Huy and
  • Yong-Ill Lee

Beilstein J. Nanotechnol. 2023, 14, 793–803, doi:10.3762/bjnano.14.65

Graphical Abstract
  • and the type of resin [31]. With particular resins, SLA can fabricate features with lateral dimensions of 100 µm and a mold-printed resolution of 50 µm. Over the past decade, numerous SERS substrates based on various materials, including paper [32][33], polymers [34][35], fibers [36], dielectrics [37
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Published 21 Jul 2023

Plasmonic nanotechnology for photothermal applications – an evaluation

  • A. R. Indhu,
  • L. Keerthana and
  • Gnanaprakash Dharmalingam

Beilstein J. Nanotechnol. 2023, 14, 380–419, doi:10.3762/bjnano.14.33

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  • multilayered nanostructures exhibit tunable plasmon resonance bands, resulting in additional shifts due to plasmon hybridization [62]. As an example, the interaction and hybridization of the plasmons of two separate metal shells (nanomatryushka) and two core dielectrics constitute the nanomatryushka
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Published 27 Mar 2023

Quasi-guided modes resulting from the band folding effect in a photonic crystal slab for enhanced interactions of matters with free-space radiations

  • Kaili Sun,
  • Yangjian Cai,
  • Uriel Levy and
  • Zhanghua Han

Beilstein J. Nanotechnol. 2023, 14, 322–328, doi:10.3762/bjnano.14.27

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  • all GMs are infinite since we ignore the material absorption in the lossless dielectrics. When the period-doubling perturbation is applied and the new QGMs are formed because of the folding of the FBZ, the coupling efficiency between free-space radiation and the QGMs is still very low, leading to the
  • distribution in Figure 4d is useful for sensing applications. For other applications where one would like to have the main field within the dielectrics, another kind of perturbation by moving the position of every second column of holes could be used instead. The distributions in Figure 4d confirm that the
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Published 06 Mar 2023

Characterisation of a micrometer-scale active plasmonic element by means of complementary computational and experimental methods

  • Ciarán Barron,
  • Giulia Di Fazio,
  • Samuel Kenny,
  • Silas O’Toole,
  • Robin O’Reilly and
  • Dominic Zerulla

Beilstein J. Nanotechnol. 2023, 14, 110–122, doi:10.3762/bjnano.14.12

Graphical Abstract
  • understood that heating affects the electrical permittivity of metals [25][26][27][28] and dielectrics [29][30]. This, in conjunction with Joule heating, is used to generate the desired effects. The active plasmonic element proposed (Figure 1) consists of a nano- or mesoscale constriction in a 48 nm thick
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Published 16 Jan 2023

Induced electric conductivity in organic polymers

  • Konstantin Y. Arutyunov,
  • Anatoli S. Gurski,
  • Vladimir V. Artemov,
  • Alexander L. Vasiliev,
  • Azat R. Yusupov,
  • Danfis D. Karamov and
  • Alexei N. Lachinov

Beilstein J. Nanotechnol. 2022, 13, 1551–1557, doi:10.3762/bjnano.13.128

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  • ; thin films; Introduction Most polymers can be classified as organic dielectrics. However, there exists a specific class of polymers, typically characterized by the existence of conjugated π-bonds, which enable delocalization of electrons leading to electric conductivity in the ground state of the
  • system. Relatively recently it was found that finite electric current can pass also through non-conjugated polymers. In the ground state they are wide-band dielectrics, but can exhibit high electric conductivity under the influence of such external parameters as mechanical stress and/or electric field [1
  • that in the measured Pb–PDP–Pb structure, the shape of the current–voltage characteristics strongly depends on temperature. At 300 K the I–V dependencies have a nonlinear character j ≈ kUn, typical for organic dielectrics. At temperatures ≈77 K and below, the dependence j = f(U) is also nonlinear, but
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Published 19 Dec 2022

Analytical and numerical design of a hybrid Fabry–Perot plano-concave microcavity for hexagonal boron nitride

  • Felipe Ortiz-Huerta and
  • Karina Garay-Palmett

Beilstein J. Nanotechnol. 2022, 13, 1030–1037, doi:10.3762/bjnano.13.90

Graphical Abstract
  • have presented the fabrication design steps for a new type of hybrid plano-concave microcavity and found its fundamental resonant modes by using an expanded transfer matrix model to account for the curvature in dielectrics and, by using FDTD simulations, we were able to show the effectiveness of the
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Published 27 Sep 2022

Investigation of electron-induced cross-linking of self-assembled monolayers by scanning tunneling microscopy

  • Patrick Stohmann,
  • Sascha Koch,
  • Yang Yang,
  • Christopher David Kaiser,
  • Julian Ehrens,
  • Jürgen Schnack,
  • Niklas Biere,
  • Dario Anselmetti,
  • Armin Gölzhäuser and
  • Xianghui Zhang

Beilstein J. Nanotechnol. 2022, 13, 462–471, doi:10.3762/bjnano.13.39

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  • supports [31][32], mechanical resonators [33], and dielectrics in nanocapacitors [34][35]. It has been shown that CNMs possess subnanometer pores, which can block the passage of most molecules and ions, but let water and helium pass through, enabling the use of CNMs in molecular filtration and ion
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Published 25 May 2022

Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy

  • Hiroya Tanaka,
  • Shinya Ohno,
  • Kazushi Miki and
  • Masatoshi Tanaka

Beilstein J. Nanotechnol. 2022, 13, 172–181, doi:10.3762/bjnano.13.12

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  • three-dimensional metal oxide semiconductor field-effect transistors (MOSFETs) [1]. Here, formation processes of ultrathin SiO2 at the interface are considered to be quite important in determining its dielectric properties. To study procedures to fabricate gate dielectrics, it will be necessary to
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Published 03 Feb 2022

Design aspects of Bi2Sr2CaCu2O8+δ THz sources: optimization of thermal and radiative properties

  • Mikhail M. Krasnov,
  • Natalia D. Novikova,
  • Roger Cattaneo,
  • Alexey A. Kalenyuk and
  • Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2021, 12, 1392–1403, doi:10.3762/bjnano.12.103

Graphical Abstract
  • makes things worse due to formation of the large parasitic capacitance shunting the EMW. Simulations presented in Figure 6 are made for ideal dielectrics with tan(δ) = 0. The detrimental role of the parasitic crystal/electrode capacitance becomes much more pronounced if we take into account dielectric
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Published 21 Dec 2021

Open-loop amplitude-modulation Kelvin probe force microscopy operated in single-pass PeakForce tapping mode

  • Gheorghe Stan and
  • Pradeep Namboodiri

Beilstein J. Nanotechnol. 2021, 12, 1115–1126, doi:10.3762/bjnano.12.83

Graphical Abstract
  • structures including metals [1], semiconductors [2][3][4], dielectrics [5][6][7], photovoltaics [8][9][10], polymers [11][12][13], ferroelectrics [14][15][16], and biological samples [17][18][19]. Technical descriptions and applications of KPFM methods for nanoscale material property characterizations are
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Published 06 Oct 2021

Structural and optical characteristics determined by the sputtering deposition conditions of oxide thin films

  • Petronela Prepelita,
  • Florin Garoi and
  • Valentin Craciun

Beilstein J. Nanotechnol. 2021, 12, 354–365, doi:10.3762/bjnano.12.29

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  • highlight the innovative applications of ZnO due to its dielectric features (Figure 12) in the form of thin films, but also as thin layers of ZnO nanoparticles synthesized in the gaseous phase as gate dielectrics. Our results show a similar value when compared, for example, with the properties obtained for
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Published 19 Apr 2021

Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy

  • Rosine Coq Germanicus,
  • Peter De Wolf,
  • Florent Lallemand,
  • Catherine Bunel,
  • Serge Bardy,
  • Hugues Murray and
  • Ulrike Lüders

Beilstein J. Nanotechnol. 2020, 11, 1764–1775, doi:10.3762/bjnano.11.159

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  • semiconductor layers as well as metals and dielectrics. The results and analyses shown highlight the differences and the complementarities of both signals. From the acquisition of the capacitance variation (∂C/∂V) and sMIM signals of the tip–sample nano-MIS, we could identify and localize the electrical
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Published 23 Nov 2020

Controlling the electronic and physical coupling on dielectric thin films

  • Philipp Hurdax,
  • Michael Hollerer,
  • Larissa Egger,
  • Georg Koller,
  • Xiaosheng Yang,
  • Anja Haags,
  • Serguei Soubatch,
  • Frank Stefan Tautz,
  • Mathias Richter,
  • Alexander Gottwald,
  • Peter Puschnig,
  • Martin Sterrer and
  • Michael G. Ramsey

Beilstein J. Nanotechnol. 2020, 11, 1492–1503, doi:10.3762/bjnano.11.132

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  • suggests that the εr of thin dielectrics may be significantly different from the values of their bulk counterparts (e.g., the εr of the MgO film presented here is approximately half the value of bulk MgO). In contrast to pentacene, 6P is a geometrically flexible molecule. The charge transfer to 6P leads to
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Published 01 Oct 2020

High permittivity, breakdown strength, and energy storage density of polythiophene-encapsulated BaTiO3 nanoparticles

  • Adnanullah Khan,
  • Amir Habib and
  • Adeel Afzal

Beilstein J. Nanotechnol. 2020, 11, 1190–1197, doi:10.3762/bjnano.11.103

Graphical Abstract
  • ) have been prepared and used in actuators, capacitors, and communication devices [4][5][6]. However, the ceramic-based dielectrics are often brittle, and possess low electrical breakdown strength and energy storage density [7], which hampers their practical applications in energy storage devices such as
  • , they are inherently poor dielectrics with very low permittivity (values in the range of 2–10) [2]. Thus, organic polymers are often reinforced with ceramic-based dielectric materials such as BTO. The dielectric properties of BTO–polymer composites are known to improve considerably with the inclusion of
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Published 10 Aug 2020

Highly sensitive detection of estradiol by a SERS sensor based on TiO2 covered with gold nanoparticles

  • Andrea Brognara,
  • Ili F. Mohamad Ali Nasri,
  • Beatrice R. Bricchi,
  • Andrea Li Bassi,
  • Caroline Gauchotte-Lindsay,
  • Matteo Ghidelli and
  • Nathalie Lidgi-Guigui

Beilstein J. Nanotechnol. 2020, 11, 1026–1035, doi:10.3762/bjnano.11.87

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  • use of composite systems of dielectrics (TiO2, ZnO) and metallic NPs has gathered increasing attention regarding SERS applications, because the plasmonic enhancement provided by metallic NPs can be combined with the optical properties of the semiconductor such as light trapping, scattering, and
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Published 14 Jul 2020

Prestress-loading effect on the current–voltage characteristics of a piezoelectric p–n junction together with the corresponding mechanical tuning laws

  • Wanli Yang,
  • Shuaiqi Fan,
  • Yuxing Liang and
  • Yuantai Hu

Beilstein J. Nanotechnol. 2019, 10, 1833–1843, doi:10.3762/bjnano.10.178

Graphical Abstract
  • been investigated by Dai et al. [24] and Yang and co-workers [25]. The mechanical behavior of composite fibers with piezoelectric dielectrics and non-piezoelectric semiconductors have also been studied by Cheng et al. [26] and Luo and co-workers [27]. For piezoelectric p–n junctions, it becomes
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Published 06 Sep 2019

Nanocomposite–parylene C thin films with high dielectric constant and low losses for future organic electronic devices

  • Marwa Mokni,
  • Gianluigi Maggioni,
  • Abdelkader Kahouli,
  • Sara M. Carturan,
  • Walter Raniero and
  • Alain Sylvestre

Beilstein J. Nanotechnol. 2019, 10, 428–441, doi:10.3762/bjnano.10.42

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  • ; Introduction Increasing the dielectric constant of gate dielectrics for oxide thin-film transistors (TFTs) improves the performance of such devices. Challenges are in the processing of these high-k dielectrics and various approaches were tested over time. Among them, low-cost and innovative methods were
  • polymers as gate dielectrics presents several advantages for the improvement of the electronic device properties such as higher dielectric constant [35] and dielectric strength [36], reduced threshold voltage [37], increased charge mobility and reduced leakage current [38]. Compared to pure parylene C and
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Published 12 Feb 2019

Electrostatic force microscopy for the accurate characterization of interphases in nanocomposites

  • Diana El Khoury,
  • Richard Arinero,
  • Jean-Charles Laurentie,
  • Mikhaël Bechelany,
  • Michel Ramonda and
  • Jérôme Castellon

Beilstein J. Nanotechnol. 2018, 9, 2999–3012, doi:10.3762/bjnano.9.279

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  • ; Introduction Composite nanomaterials (often referred to as “nanodielectrics” by the dielectrics community) can be synthesized by including dielectric nanoparticles in a polymeric matrix and are often used as insulating material [1][2][3]. Although the mechanical and thermal behavior of the base insulating
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Published 07 Dec 2018

Enhancement of X-ray emission from nanocolloidal gold suspensions under double-pulse excitation

  • Wei-Hung Hsu,
  • Frances Camille P. Masim,
  • Armandas Balčytis,
  • Hsin-Hui Huang,
  • Tetsu Yonezawa,
  • Aleksandr A. Kuchmizhak,
  • Saulius Juodkazis and
  • Koji Hatanaka

Beilstein J. Nanotechnol. 2018, 9, 2609–2617, doi:10.3762/bjnano.9.242

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  • especially in aqueous solution. Recently, it was reported that fs-double-pulsed excitation (including pump–probe type experiments) with dielectrics amplifies optical emission [24]. This double-pulsed excitation is considered to be another way to efficiently augment the X-ray intensity [25]. A significant
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Published 01 Oct 2018

Metal–dielectric hybrid nanoantennas for efficient frequency conversion at the anapole mode

  • Valerio F. Gili,
  • Lavinia Ghirardini,
  • Davide Rocco,
  • Giuseppe Marino,
  • Ivan Favero,
  • Iännis Roland,
  • Giovanni Pellegrini,
  • Lamberto Duò,
  • Marco Finazzi,
  • Luca Carletti,
  • Andrea Locatelli,
  • Aristide Lemaître,
  • Dragomir Neshev,
  • Costantino De Angelis,
  • Giuseppe Leo and
  • Michele Celebrano

Beilstein J. Nanotechnol. 2018, 9, 2306–2314, doi:10.3762/bjnano.9.215

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  • symmetry. Metal-less nanophotonics based on dielectrics of high refractive index and semiconductors recently emerged as a promising alternative to plasmonic nanostructures for linear and nonlinear nanophotonic applications due to the reduced losses at optical frequencies [15]. Since in high-index
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Published 27 Aug 2018

Lead-free hybrid perovskites for photovoltaics

  • Oleksandr Stroyuk

Beilstein J. Nanotechnol. 2018, 9, 2209–2235, doi:10.3762/bjnano.9.207

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Published 21 Aug 2018

Interaction-induced zero-energy pinning and quantum dot formation in Majorana nanowires

  • Samuel D. Escribano,
  • Alfredo Levy Yeyati and
  • Elsa Prada

Beilstein J. Nanotechnol. 2018, 9, 2171–2180, doi:10.3762/bjnano.9.203

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  • from , proving that its effect is small and that the main contribution stems from . In the following calculations, we consider the dielectric constants shown in Figure 1a. For the dielectrics materials, i.e., the wire, the substrate and the surrounding medium, we use typical values [37] of ε = 17.7, εd
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Published 15 Aug 2018

Light–Matter interactions on the nanoscale

  • Mohsen Rahmani and
  • Chennupati Jagadish

Beilstein J. Nanotechnol. 2018, 9, 2125–2127, doi:10.3762/bjnano.9.201

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  • in metals), the knowledge is still valuable for developing new strategies for light–matter interactions on the nanoscale. High refractive index dielectric [11] and semiconductor [12] nanostructures have been recently exploited as an alternative to plasmonics [13]. Dielectrics and semiconductors
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Published 10 Aug 2018

Synthesis of hafnium nanoparticles and hafnium nanoparticle films by gas condensation and energetic deposition

  • Irini Michelakaki,
  • Nikos Boukos,
  • Dimitrios A. Dragatogiannis,
  • Spyros Stathopoulos,
  • Costas A. Charitidis and
  • Dimitris Tsoukalas

Beilstein J. Nanotechnol. 2018, 9, 1868–1880, doi:10.3762/bjnano.9.179

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  • constant HfO2 and its compounds are used in the field of microelectronics for the manufacturing of integrated circuits and more particularly as gate dielectrics of metal-oxide semiconductor transistors having replaced the traditional thermally grown SiO2 dielectric [34]. More recently, HfO2 was also
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Published 27 Jun 2018

The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability

  • Hichem Ferhati,
  • Fayçal Djeffal and
  • Toufik Bentrcia

Beilstein J. Nanotechnol. 2018, 9, 1856–1862, doi:10.3762/bjnano.9.177

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  • limitations by proposing new designs based on heterostructures, gate engineering and high-k dielectrics [9][10][11][12]. Nanoscale DG TFETs are believed to face an upward amendment to meet the difficulty of decreasing the huge thermal budget required for the formation of the gated p-i-n diode structure
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Published 22 Jun 2018
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