Modulated critical currents of spin-transfer torque-induced resistance changes in NiCu/Cu multilayered nanowires

• Mengqi Fu,
• Roman Hartmann,
• Julian Braun,
• Sergej Andreev,
• Torsten Pietsch and
• Elke Scheer

Beilstein J. Nanotechnol. 2024, 15, 360–366, doi:10.3762/bjnano.15.32

• can be flipped by STT [10] in one nanowire [9][11]. Comparing with the classical trilayer system (including one hard layer with fixed magnetization, one free layer, and one nonmagnetic spacer layer in between) [10], the presence of more free layers enhances, for example, the magnetoresistance (MR) [7

• substrate. Thus, we fabricated three-dimensional STT devices without complex etching processes or additional coating. The device discussed in detail presents a total magnetoresistance of about 0.45 Ω (ca. 0.52% of the total dV/dI) at 4 K. In addition, hysteretic behavior and a reversible dip of dV/dI under

Controllable two- and three-state magnetization switching in single-layer epitaxial Pd_1−xFe_x films and an epitaxial Pd_0.92Fe_0.08/Ag/Pd_0.96Fe_0.04 heterostructure

• Igor V. Yanilkin,
• Amir I. Gumarov,
• Gulnaz F. Gizzatullina,
• Roman V. Yusupov and
• Lenar R. Tagirov

Beilstein J. Nanotechnol. 2022, 13, 334–343, doi:10.3762/bjnano.13.28

• . Its magnetic configuration diagram has been constructed and the conditions have been determined for a controllable switching between stable parallel, orthogonal, and antiparallel arrangements of magnetic moments of the layers. Keywords: anisotropic magnetoresistance; magnetization reversal; Pd–Fe

• Pd0.92Fe0.08 film at different in-plane orientations of the magnetic field was studied by measuring the anisotropic magnetoresistance (AMR) using the four-probe method. For this purpose, the Pd0.92Fe0.08 film was cut with a diamond saw into stripe-like pieces. In the first sample the current flowed along the

• film (and the substrate). The reference frame orientation with respect to the sample is shown in the insets in Figure 1. When measuring the magnetoresistance, the magnetic field was applied at different angles in three main planes as shown in Figure 1. At any orientation, on approaching zero field, the

In situ transport characterization of magnetic states in Nb/Co superconductor/ferromagnet heterostructures

• Olena M. Kapran,
• Roman Morari,
• Taras Golod,
• Evgenii A. Borodianskyi,
• Vladimir Boian,
• Andrei Prepelita,
• Nikolay Klenov,
• Anatoli S. Sidorenko and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2021, 12, 913–923, doi:10.3762/bjnano.12.68

• states in complex thin-film multilayers. In this work, we study experimentally in-plane transport properties of microstructured Nb/Co multilayers. We apply various transport characterization techniques, including magnetoresistance, Hall effect, and the first-order-reversal-curves (FORC) analysis. We

• (FORC) analysis. We demonstrate that in combination with magnetoresistance (MR) and Hall effect measurements, it can provide a detailed knowledge of the magnetic configuration in the ML. In particular, we identify the parallel (P) state, the antiparallel (AP) state, the noncollinear monodomain scissor

• ][51][52]. This provides clear evidence for the FF phenomenon in our samples. From the comparison of Figure 1h and Figure 1i it is clear that FF takes place in the whole resistive transition region. Flux-flow magnetoresistance, triggered by domains Figure 2a–c shows longitudinal magnetoresistances at

Spontaneous shape transition of Mn_xGe_1−x islands to long nanowires

• S. Javad Rezvani,
• Luc Favre,
• Gabriele Giuli,
• Yiming Wubulikasimu,
• Isabelle Berbezier,
• Augusto Marcelli,
• Luca Boarino and
• Nicola Pinto

Beilstein J. Nanotechnol. 2021, 12, 366–374, doi:10.3762/bjnano.12.30

• silicides as an indispensable part of microelectronics [14][15]. In particular, the manganese germanide phase Mn5Ge3 is a semimetallic compound that has attracted attention due to its giant magnetoresistance and large spin polarization, which make it a proper candidate for spintronics applications [16][17

Remarkable electronic and optical anisotropy of layered 1T’-WTe₂ 2D materials

• Qiankun Zhang,
• Rongjie Zhang,
• Jiancui Chen,
• Wanfu Shen,
• Chunhua An,
• Xiaodong Hu,
• Mingli Dong,
• Jing Liu and
• Lianqing Zhu

Beilstein J. Nanotechnol. 2019, 10, 1745–1753, doi:10.3762/bjnano.10.170

• , quantitative research on 1T’-WTe2 has been reported, revealing its fascinating physical properties such as non-saturating magnetoresistance, highly anisotropic crystalline structure and anisotropic optical/electrical response. Especially for its anisotropic properties, surging research interest devoted solely

• magnetoresistance (MR) behavior, which was attributed to its perfect electron–hole compensation. Theoretical calculations and experiments have indicated that WTe2 has a complicated electronic structure with more than two bands presenting at the Fermi level [17]. Meanwhile, it was believed to a wonderful candidate

• photoelectric property in detail, showing a 300-fold improvement in the photosensitivity. Moreover, due to its attractive properties, mono- or few-layer 1T’-WTe2 was shown to be a promising, novel and fascinating material for high-performance magnetoresistance applications in thin-film electromagnetics [33][34

Giant magnetoresistance ratio in a current-perpendicular-to-plane spin valve based on an inverse Heusler alloy Ti₂NiAl

• Yu Feng,
• Zhou Cui,
• Bo Wu,
• Jianwei Li,
• Hongkuan Yuan and
• Hong Chen

Beilstein J. Nanotechnol. 2019, 10, 1658–1665, doi:10.3762/bjnano.10.161

• CPP-SV device are in parallel magnetization configuration, the interface containing Ti and Ni atoms possesses a higher spin up transmission coefficient than the interface containing Ti and Al atoms. The device with the TiNiB-terminated interface possesses the largest magnetoresistance ratio of 3.28

• demonstrated in a Co2Cr1−xFexAl-based spin valve [6]. A CPP-SV using Co2Mn(Ga0.25Ge0.75) has been verified to have a high resistance–area product (ΔRA) of 6.1 mΩ·μm2 and magnetoresistance (MR) ratio of 40.2% [7]. A Co2Fe(Ge0.5Ga0.5) [8] based CPP-SV obtained a higher ΔRA of 26.4 mΩ·μm2 and a MR ratio of 129.1

• magnetoresistance (TMR) ratio of 2 × 103 [13]. Nonequilibrium spin injection in a MnAl-based spintronics device was studied, and a TMR ratio of 2000% was predicted under a high bias voltage [14]. A large TMR ratio and spin Seebeck effect were found in a Ti2MnAl-based heterostructure [15]. Although some relatively

Superconducting switching due to a triplet component in the Pb/Cu/Ni/Cu/Co₂Cr_1−xFe_xAl_y spin-valve structure

• Andrey Andreevich Kamashev,
• Nadir Nurgayazovich Garif’yanov,
• Aidar Azatovich Validov,
• Joachim Schumann,
• Vladislav Kataev,
• Bernd Büchner,
• Yakov Victorovich Fominov and
• Ilgiz Abdulsamatovich Garifullin

Beilstein J. Nanotechnol. 2019, 10, 1458–1463, doi:10.3762/bjnano.10.144

• novel fundamental physical phenomena that are absent in the initial materials from which the heterostructures are made. Moreover, those phenomena can also be of remarkable technological relevance. A very prominent example is the discovery, in 1988, of the giant magnetoresistance (GMR) effect in

Relation between thickness, crystallite size and magnetoresistance of nanostructured La_1−xSr_xMn_yO_3±δ films for magnetic field sensors

• Rasuole Lukose,
• Valentina Plausinaitiene,
• Milita Vagner,
• Nerija Zurauskiene,
• Skirmantas Kersulis,
• Virgaudas Kubilius,
• Karolis Motiejuitis,
• Birute Knasiene,
• Voitech Stankevic,
• Zita Saltyte,
• Martynas Skapas,
• Algirdas Selskis and
• Evaldas Naujalis

Beilstein J. Nanotechnol. 2019, 10, 256–261, doi:10.3762/bjnano.10.24

• additional supply source of precursor solution in an exponentially decreasing manner, exhibit the highest magnetoresistance and the lowest magnetoresistance anisotropy. The possibility to use these films for the development of magnetic field sensors operating at room temperature is discussed. Keywords

• : colossal magnetoresistance; crystallites; magnetic field sensors; MOCVD growth; nanostructured films; Introduction Perovskite manganite materials are an interesting topic of research since they can be applied as sensors for measuring the magnetic field due to the colossal magnetoresistance (CMR

• substrates in two different technological ways, resulting in different microstructure of the obtained nanostructured films. Such films have an advantage in comparison with the epitaxial films grown on monocrystalline substrates since they exhibit high magnetoresistance (MR) values over a broader temperature

High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb)_1−x(MnSb)_x alloy

• Leonid N. Oveshnikov,
• Elena I. Nekhaeva,
• Alexey V. Kochura,
• Alexander B. Davydov,
• Mikhail A. Shakhov,
• Sergey F. Marenkin,
• Oleg A. Novodvorskii,
• Alexander P. Kuzmenko,
• Alexander L. Vasiliev,
• Boris A. Aronzon and
• Erkki Lahderanta

Beilstein J. Nanotechnol. 2018, 9, 2457–2465, doi:10.3762/bjnano.9.230

• negative magnetoresistance (nMR), which is usually ascribed to spin-dependent scattering. As it is shown in Figure 3c, the studied samples exhibit nMR that does not saturate up to 200 kOe in the studied temperature range. It should be noted, that at low fields the nMR has a similar form at all temperatures

• ) Field dependence of the Hall resistance up to H = 200 kOe at various temperatures. (c) Magnetoresistance at various temperatures. The inset shows the low-field part of the presented curves. (d) Temperature dependence of the high-field magnetoresistance ΔMR (at H = 200 kOe), saturated AHE amplitude ΔRAHE

Magnetism and magnetoresistance of single Ni–Cu alloy nanowires

• Andreea Costas,
• Camelia Florica,
• Elena Matei,
• Maria Eugenia Toimil-Molares,
• Ionel Stavarache,
• Andrei Kuncser,
• Victor Kuncser and
• Ionut Enculescu

Beilstein J. Nanotechnol. 2018, 9, 2345–2355, doi:10.3762/bjnano.9.219

• membranes. Photolithography was employed for obtaining interdigitated metallic electrode systems of Ti/Au onto SiO2/Si substrates and subsequent electron beam lithography was used for contacting single nanowires in order to investigate their galvano-magnetic properties. The results of the magnetoresistance

• measurements made on single Ni–Cu alloy nanowires of different compositions have been reported and discussed in detail. A direct methodology for transforming the magnetoresistance data into the corresponding magnetic hysteresis loops was proposed, opening new possibilities for an easy magnetic investigation of

• modeling. It has been theoretically proven that the proposed methodology can be applied over a large range of nanowire diameters if the measurement geometry is suitably chosen. Keywords: nanowires; magnetic properties; magnetoresistance; Introduction Nowadays, due to the continuous search for new

Influence of the thickness of an antiferromagnetic IrMn layer on the static and dynamic magnetization of weakly coupled CoFeB/IrMn/CoFeB trilayers

• Deepika Jhajhria,
• Dinesh K. Pandya and
• Sujeet Chaudhary

Beilstein J. Nanotechnol. 2018, 9, 2198–2208, doi:10.3762/bjnano.9.206

• magnetoresistance [7], inverse spin Hall effect [8] and spin Seebeck effect [9][10] have already been reported in AF materials. Transfer of spin angular momentum presents one of the promising ways to control the magnetic properties of FM thin films [11]. However, little is known about spin transport in AF materials

Thermoelectric current in topological insulator nanowires with impurities

• Sigurdur I. Erlingsson,
• Jens H. Bardarson and
• Andrei Manolescu

Beilstein J. Nanotechnol. 2018, 9, 1156–1161, doi:10.3762/bjnano.9.107

• properties is not always straightforward [3]. Even though few experimental studies exist on thermoelectric properties in topological insulator nanowires (TIN), many studies have reported magnetoresistance oscillations, both in longitudinal and transversal fields for TINs [4][5][6][7][8][9][10]. In its

Field-controlled ultrafast magnetization dynamics in two-dimensional nanoscale ferromagnetic antidot arrays

• Anulekha De,
• Sucheta Mondal,
• Sourav Sahoo,
• Saswati Barman,
• Yoshichika Otani,
• Rajib Kumar Mitra and
• Anjan Barman

Beilstein J. Nanotechnol. 2018, 9, 1123–1134, doi:10.3762/bjnano.9.104

• can be varied to tune the magnonic spectra and magnetization dynamics in ferromagnetic antidot lattices. Several studies have been focused on the engineering of the coercive field, magnetoresistance and anisotropy properties on domain formation and the magnetization reversal mechanism with the change

Combined pulsed laser deposition and non-contact atomic force microscopy system for studies of insulator metal oxide thin films

• Daiki Katsube,
• Hayato Yamashita,
• Satoshi Abo and
• Masayuki Abe

Beilstein J. Nanotechnol. 2018, 9, 686–692, doi:10.3762/bjnano.9.63

• magnetoresistance [61]. Figure 4 shows results of atomic-resolution measurements of anatase TiO2(001) and LaAlO3(100) using the NC-AFM. We determined the PLD conditions according to the procedure mentioned above, described in the caption of Figure 4. LEED measurements were also performed in situ after the NC-AFM

Beyond Moore’s technologies: operation principles of a superconductor alternative

• Igor I. Soloviev,
• Nikolay V. Klenov,
• Sergey V. Bakurskiy,
• Mikhail Yu. Kupriyanov,
• Alexander L. Gudkov and
• Anatoli S. Sidorenko

Beilstein J. Nanotechnol. 2017, 8, 2689–2710, doi:10.3762/bjnano.8.269

Towards molecular spintronics

• Georgeta Salvan and
• Dietrich R. T. Zahn

Beilstein J. Nanotechnol. 2017, 8, 2464–2466, doi:10.3762/bjnano.8.245

• molecules; (magneto-)optical spectroscopy; molecular spintronics; photoelectron spectroscopy; surface science; thin films; The discovery of tunneling and giant magnetoresistance in inorganic spin valves has led to a revolution in the field of magnetic memory and the significant increase in the storage

Electronic structure, transport, and collective effects in molecular layered systems

• Torsten Hahn,
• Tim Ludwig,
• Carsten Timm and
• Jens Kortus

Beilstein J. Nanotechnol. 2017, 8, 2094–2105, doi:10.3762/bjnano.8.209

• larger bias voltages. The same methodology is applied to the second model system, where the two different molecular stacks are in contact with magnetic Ni(111) leads. The quantity of interest for possible applications is the tunnel magnetoresistance (TMR), which can be obtained directly from I–V

Spin-dependent transport and functional design in organic ferromagnetic devices

• Guichao Hu,
• Shijie Xie,
• Chuankui Wang and
• Carsten Timm

Beilstein J. Nanotechnol. 2017, 8, 1919–1931, doi:10.3762/bjnano.8.192

• interaction and spin–spin correlation between π-electrons and radicals, are highlighted. Several interesting functional designs of organic ferromagnetic devices are discussed, specifically the concepts of a spin filter, multi-state magnetoresistance, and spin-current rectification. The mechanism of each

• phenomenon is explained by transmission and orbital analysis. These works show that organic ferromagnets are promising components for spintronic devices that deserve to be designed and examined in future experiments. Keywords: magnetoresistance; organic ferromagnet; spin-current rectification; spin

• transport in organic magnets has also been studied. Yoo et al. [25] have experimentally demonstrated the magnetic response of V[TCNE]x-based devices (TCNE stands for tetracyanoethylene) by connecting the organic magnet to gold electrodes. Li et al. [26] have investigated the magnetoresistance effect in

Light-induced magnetoresistance in solution-processed planar hybrid devices measured under ambient conditions

• Sreetama Banerjee,
• Daniel Bülz,
• Danny Reuter,
• Karla Hiller,
• Dietrich R. T. Zahn and
• Georgeta Salvan

Beilstein J. Nanotechnol. 2017, 8, 1502–1507, doi:10.3762/bjnano.8.150

• report light-induced negative organic magnetoresistance (OMAR) measured in ambient atmosphere in solution-processed 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) planar hybrid devices with two different device architectures. Hybrid electronic devices with trench-isolated electrodes (HED

• -TIE) having a channel length of ca. 100 nm fabricated in this work and, for comparison, commercially available pre-structured organic field-effect transistor (OFET) substrates with a channel length of 20 µm were used. The magnitude of the photocurrent as well as the magnetoresistance was found to be

• higher for the HED-TIE devices because of the much smaller channel length of these devices compared to the OFETs. We attribute the observed light-induced negative magnetoresistance in TIPS-pentacene to the presence of electron–hole pairs under illumination as the magnetoresistive effect scales with the

Spin-chemistry concepts for spintronics scientists

• Konstantin L. Ivanov,
• Alexander Wagenpfahl,
• Carsten Deibel and
• Jörg Matysik

Beilstein J. Nanotechnol. 2017, 8, 1427–1445, doi:10.3762/bjnano.8.143

• metal/organic semiconductor/nonmagnetic metal, in which the first interface induces spin pumping [25]. Other devices do not rely on spin manipulation by ferromagnetic layers, but on the intrinsic properties of the organic semiconductor to show, for instance, organic magnetoresistance [26]. These devices

• bipolarons, electron–hole (polaron) pairs (or charge transfer excitons), but also polarons interacting with triplets, as well as triplet–exciton pairs. The bipolaron model [83] can explain a positive magnetoresistance in energetically disordered systems, such as a conjugated polymer film. A mobile polaron is

Ultrasmall magnetic field-effect and sign reversal in transistors based on donor/acceptor systems

• Thomas Reichert and
• Tobat P. I. Saragi

Beilstein J. Nanotechnol. 2017, 8, 1104–1114, doi:10.3762/bjnano.8.112

• films. This enhances the probability of bipolaron formation, which is the process responsible for magnetoresistance effects in our system. Thereby even ultrasmall magnetic fields as low as 0.7 mT can influence the resistance of the charge transport channel. Moreover, the magnetoresistance is drastically

• influenced by the drain voltage, resulting in a sign reversal. An average B0 value of ≈2.1 mT is obtained for all mixing compositions, indicating that only one specific quasiparticle is responsible for the magnetoresistance effects. All magnetoresistance effects can be thoroughly clarified within the

• framework of the bipolaron model. Keywords: donor/acceptor system; organic magnetoresistance; organic transistors; sign reversal; ultrasmall magnetic field-effects; Introduction In recent years, the development of organic π-conjugated materials have perfectly meet the requirements for low-cost and

Thickness-modulated tungsten–carbon superconducting nanostructures grown by focused ion beam induced deposition for vortex pinning up to high magnetic fields

• Ismael García Serrano,
• Javier Sesé,
• Isabel Guillamón,
• Hermann Suderow,
• Sebastián Vieira,
• Manuel Ricardo Ibarra and
• José María De Teresa

Beilstein J. Nanotechnol. 2016, 7, 1698–1708, doi:10.3762/bjnano.7.162

• O (7%). The nature of the deposits is amorphous, as previous STM and transmission electron microscopy studies have demonstrated [11][13]. The W–C samples have been grown on Si3N4 substrates prepatterned with Ti pads by e-beam evaporation and lift-off techniques for magnetoresistance measurements

• rise to greater changes in the Ga and W content without affecting the measured Tc [49]. Magnetotransport experiments Magnetoresistance measurements in a four-probe configuration as a function of magnetic field (up to 9 T) and temperature (down to 1.9 K) have been carried out with commercial equipment

• temperatures under study, the field penetrates practically homogeneously into the superconducting specimen, so that demagnetizing or shielding effects can be neglected. In Figure 4a, magnetoresistance curves of the sample with 100 nm pitch are displayed. Several resistance local minima are observed, which are

Phenalenyl-based mononuclear dysprosium complexes

• Yanhua Lan,
• Andrea Magri,
• Olaf Fuhr and
• Mario Ruben

Beilstein J. Nanotechnol. 2016, 7, 995–1009, doi:10.3762/bjnano.7.92

• -workers [22]. Upon deposition of these molecules onto a ferromagnetic surface, a hybridized organometallic supramolecular magnetic layer can be formed. This interface layer exhibits a spin-dependent resistance leading to an interface magnetoresistance (IMR) effect. These findings suggest that phenalenyl

Thickness dependence of the triplet spin-valve effect in superconductor–ferromagnet–ferromagnet heterostructures

• Daniel Lenk,
• Vladimir I. Zdravkov,
• Jan-Michael Kehrle,
• Günter Obermeier,
• Aladin Ullrich,
• Roman Morari,
• Hans-Albrecht Krug von Nidda,
• Claus Müller,
• Mikhail Yu. Kupriyanov,
• Anatolie S. Sidorenko,
• Siegfried Horn,
• Rafael G. Deminov,
• Lenar R. Tagirov and
• Reinhard Tidecks

Beilstein J. Nanotechnol. 2016, 7, 957–969, doi:10.3762/bjnano.7.88

• , a triplet SSV was employed to induce magnetism into a normal conducting metal [60]. Triplet SSVs are expected to perform logical functions like the normal conducting giant magnetoresistance (GMR) devices, however, with a much better energy efficiency [61]. Sample preparation and characterization The

Magnetic switching of nanoscale antidot lattices

• Ulf Wiedwald,
• Joachim Gräfe,
• Kristof M. Lebecki,
• Maxim Skripnik,
• Felix Haering,
• Gisela Schütz,
• Paul Ziemann,
• Eberhard Goering and
• Ulrich Nowak

Beilstein J. Nanotechnol. 2016, 7, 733–750, doi:10.3762/bjnano.7.65

• application of micromagnetic simulations leads to a detailed understanding of the switching modes of specific sample geometries. We highlight that even anisotropic magnetoresistance curves can be simulated in good agreement with experiments. In the second part, we first focus on the detailed discussion of the

• × 2 × 10 nm3) [28]. As will be shown later in connection with the anisotropic magnetoresistance (AMR) the major part of the total resistance arises from the 2.5 × 20 µm2 FIB-cut constriction. But still the continuous antidot film surrounding the channel influences the magnetic switching via dipolar