Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

• Mathias Franz,
• Mahnaz Safian Jouzdani,
• Lysann Kaßner,
• Marcus Daniel,
• Frank Stahr and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2023, 14, 951–963, doi:10.3762/bjnano.14.78

• . Typically, these systems require ultrathin layers within the nanometre scale [6]. The thickness and conformality criteria of future microelectronics devices require the development of cobalt metal films deposited by ALD. Because of the self-limiting growth process, ALD allows for the sub-nanometre control

• Microelectronics of Chemnitz University of Technology, and FAP Forschungs- und Applikationslabor Plasmatechnik GmbH. The reactor is a single-wafer reactor for 200 mm wafers and consists of an inner and an outer reactor with a typical base pressure of 3 × 10−6 mbar. A simplified schematic sketch is shown in Figure

Ultralow-energy amorphization of contaminated silicon samples investigated by molecular dynamics

• Grégoire R. N. Defoort-Levkov,
• Alan Bahm and
• Patrick Philipp

Beilstein J. Nanotechnol. 2023, 14, 834–849, doi:10.3762/bjnano.14.68

• years, the need to control what happens at the surface of the sample has risen sharply, specifically for semiconductors [3][4], microelectronics [5], and surface patterning [6][7]. Other applications of low-energy beams include the preparation of nanoholes [8][9]. Furthermore, deposition processes are

Microneedle patches – the future of drug delivery and vaccination?

• Zahra Faraji Rad,
• Philip D. Prewett and
• Graham J. Davies

Beilstein J. Nanotechnol. 2023, 14, 494–495, doi:10.3762/bjnano.14.40

• originally developed for the microelectronics industry; they were inevitably made from silicon. Since then, silicon MNs have been largely abandoned in favour of polymer versions because of their superior mechanical properties, biocompatibility, ease of manufacture, and ultimate scalability [5][6]. Polymer

Frontiers of nanoelectronics: intrinsic Josephson effect and prospects of superconducting spintronics

• Anatolie S. Sidorenko,
• Horst Hahn and
• Vladimir Krasnov

Beilstein J. Nanotechnol. 2023, 14, 79–82, doi:10.3762/bjnano.14.9

• , during the last four decades, the triumphal development of microelectronics and computers, based on traditional semiconductor chips, was enabled by the exponential growth of the number of transistors in chips and the shrinkage of the size of individual transistors, following the empirical Moore’s Law

Electrical and optical enhancement of ITO/Mo bilayer thin films via laser annealing

• Abdelbaki Hacini,
• Ahmad Hadi Ali,
• Nurul Nadia Adnan and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2022, 13, 1589–1595, doi:10.3762/bjnano.13.133

• -annealed ITO/Mo bilayer thin films. Acknowledgements The authors would like to thank Laser and Semiconductor Technology Research Group, and Microelectronics and Nanotechnology - Shamsuddin Research Centre (MiNT-SRC) for providing technical facilities for our work. Furthermore, the authors would like to

Structural studies and selected physical investigations of LiCoO₂ obtained by combustion synthesis

• Monika Michalska,
• Paweł Ławniczak,
• Tomasz Strachowski,
• Adam Ostrowski and
• Waldemar Bednarski

Beilstein J. Nanotechnol. 2022, 13, 1473–1482, doi:10.3762/bjnano.13.121

• Research Network - Institute of Microelectronics and Photonics, Al. Lotników 32/46, 02-668 Warsaw, Poland Institute of Molecular Physics Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań, Poland 10.3762/bjnano.13.121 Abstract Nanocrystalline powders of LiCoO2 were synthesized using a modified

• the total conductivity of the sample. Acknowledgements Authors would like to acknowledge Dr. R. Diduszko and Mrs. M. Romaniec (Lukasiewicz Research Network – Institute of Microelectronics and Photonics - IMIF) for XRD and SEM measurements. Funding This work was financially supported by the Ministry

Optimizing PMMA solutions to suppress contamination in the transfer of CVD graphene for batch production

• Chun-Da Liao,
• Andrea Capasso,
• Tiago Queirós,
• Telma Domingues,
• Fatima Cerqueira,
• Nicoleta Nicoara,
• Jérôme Borme,
• Paulo Freitas and
• Pedro Alpuim

Beilstein J. Nanotechnol. 2022, 13, 796–806, doi:10.3762/bjnano.13.70

• . Keywords: 2D materials; graphene transfer process; large-scale fabrication; microelectronics; poly(methyl methacrylate); Introduction Graphene and two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been the focus of an intense research effort aimed at developing a new class of innovative

A chemiresistive sensor array based on polyaniline nanocomposites and machine learning classification

• Jiri Kroutil,
• Alexandr Laposa,
• Ali Ahmad,
• Jan Voves,
• Vojtech Povolny,
• Ladislav Klimsa,
• Marina Davydova and
• Miroslav Husak

Beilstein J. Nanotechnol. 2022, 13, 411–423, doi:10.3762/bjnano.13.34

• Jiri Kroutil Alexandr Laposa Ali Ahmad Jan Voves Vojtech Povolny Ladislav Klimsa Marina Davydova Miroslav Husak Department of Microelectronics, Czech Technical University in Prague, Technicka 2,166 27 Prague, Czech Republic FZU - Institute of Physics, of the Czech Academy of Sciences, Na Slovance

Electrostatic pull-in application in flexible devices: A review

• Teng Cai,
• Yuming Fang,
• Yingli Fang,
• Ruozhou Li,
• Ying Yu and
• Mingyang Huang

Beilstein J. Nanotechnol. 2022, 13, 390–403, doi:10.3762/bjnano.13.32

• Teng Cai Yuming Fang Yingli Fang Ruozhou Li Ying Yu Mingyang Huang College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing, China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly

An overview of microneedle applications, materials, and fabrication methods

• Zahra Faraji Rad,
• Philip D. Prewett and
• Graham J. Davies

Beilstein J. Nanotechnol. 2021, 12, 1034–1046, doi:10.3762/bjnano.12.77

• feature sizes are fabricated using the tools of the microelectronics industry from metals, silicon, and polymers. Various types of subtractive and additive manufacturing processes have been used to manufacture microneedles, but the development of microneedle-based systems using conventional subtractive

• photolithographic epoxy [73] have all been used. Microneedles were first made from silicon as the microelectronics industry provided tools for manufacturing integrated circuits that could be adapted to microneedle fabrication [74] and silicon is still the most common microneedle material. Although this technology

• complex multistep processes and expensive tools developed for the microelectronics industry [74][85], as introduced already. Subtractive technologies, in the form of wet and dry etching, are most frequently used. In wet etching, a single crystal silicon wafer is immersed in baths of various chemical

Uniform arrays of gold nanoelectrodes with tuneable recess depth

• Elena O. Gordeeva,
• Ilya V. Roslyakov,
• Alexey P. Leontiev,
• Alexey A. Klimenko and
• Kirill S. Napolskii

Beilstein J. Nanotechnol. 2021, 12, 957–964, doi:10.3762/bjnano.12.72

• Microelectronics RAS, Leninsky av., Moscow 115487, Russia Moscow Institute of Physics and Technology, Institutskiy per., Dolgoprudny 141701, Russia 10.3762/bjnano.12.72 Abstract Nanoelectrode arrays are much in demand in electroanalytical chemistry, electrocatalysis, and bioelectrochemistry. One of the promising

Modification of a SERS-active Ag surface to promote adsorption of charged analytes: effect of Cu²⁺ ions

• Bahdan V. Ranishenka,
• Andrei Yu. Panarin,
• Irina A. Chelnokova,
• Sergei N. Terekhov,
• Peter Mojzes and
• Vadim V. Shmanai

Beilstein J. Nanotechnol. 2021, 12, 902–912, doi:10.3762/bjnano.12.67

• Information File 84: Characterization of silver nanostructures. Funding This work has been supported by the Government Research Program “Photonics, Opto- and Microelectronics 1.4.01”. Participation of P. M. in this study was supported by the Czech Science Foundation (Grant 18-10897S).

Electromigration-induced formation of percolating adsorbate islands during condensation from the gaseous phase: a computational study

• Alina V. Dvornichenko,
• Vasyl O. Kharchenko and
• Dmitrii O. Kharchenko

Beilstein J. Nanotechnol. 2021, 12, 694–703, doi:10.3762/bjnano.12.55

• increase in current density and, consequently, to a greater manifestation of EM. It is recognized as one of the main problems in the reliability of polar connections in microelectronics. The most common failure of electronics devices is the rupture of the electrical circuit caused by pores induced by the

Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

• Jakub Kierdaszuk,
• Piotr Kaźmierczak,
• Justyna Grzonka,
• Aleksandra Krajewska,
• Aleksandra Przewłoka,
• Wawrzyniec Kaszub,
• Zbigniew R. Zytkiewicz,
• Marta Sobanska,
• Maria Kamińska,
• Andrzej Wysmołek and
• Aneta Drabińska

Beilstein J. Nanotechnol. 2021, 12, 566–577, doi:10.3762/bjnano.12.47

• Science and Metallurgy Engineering and Inorganic Chemistry, Cadiz, Spain Łukasiewicz - Institute of Microelectronics and Photonics, Warsaw, Poland CENTERA Laboratories, Institute of High Pressure Physics PAS, Warsaw, Poland Institute of Optoelectronics, Military University of Technology, Warsaw, Poland

Simulation of gas sensing with a triboelectric nanogenerator

• Kaiqin Zhao,
• Hua Gan,
• Huan Li,
• Ziyu Liu and
• Zhiyuan Zhu

Beilstein J. Nanotechnol. 2021, 12, 507–516, doi:10.3762/bjnano.12.41

• Kaiqin Zhao Hua Gan Huan Li Ziyu Liu Zhiyuan Zhu School of Microelectronics, Fudan University, Shanghai 200433, China Chongqing Key Laboratory of Nonlinear Circuits and Intelligent Information Processing, Southwest University, Chongqing 400715, China No.29 Research Institute of CETC, Chengdu

Solution combustion synthesis of a nanometer-scale Co₃O₄ anode material for Li-ion batteries

• Monika Michalska,
• Huajun Xu,
• Qingmin Shan,
• Shiqiang Zhang,
• Yohan Dall'Agnese,
• Yu Gao,
• Amrita Jain and
• Marcin Krajewski

Beilstein J. Nanotechnol. 2021, 12, 424–431, doi:10.3762/bjnano.12.34

• Network ‒ Institute of Microelectronics and Photonics, Al. Lotników 32/46, 02-668 Warsaw, Poland Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, PR China Institute for Materials Discovery, University College

Spontaneous shape transition of Mn_xGe_1−x islands to long nanowires

• S. Javad Rezvani,
• Luc Favre,
• Gabriele Giuli,
• Yiming Wubulikasimu,
• Isabelle Berbezier,
• Augusto Marcelli,
• Luca Boarino and
• Nicola Pinto

Beilstein J. Nanotechnol. 2021, 12, 366–374, doi:10.3762/bjnano.12.30

• silicides as an indispensable part of microelectronics [14][15]. In particular, the manganese germanide phase Mn5Ge3 is a semimetallic compound that has attracted attention due to its giant magnetoresistance and large spin polarization, which make it a proper candidate for spintronics applications [16][17

A review on the green and sustainable synthesis of silver nanoparticles and one-dimensional silver nanostructures

• Sina Kaabipour and
• Shohreh Hemmati

Beilstein J. Nanotechnol. 2021, 12, 102–136, doi:10.3762/bjnano.12.9

• delivery [1][2][3][4][5][6], nanomedicine [7][8][9][10], food packaging [11][12][13], aseptic procedures [14][15][16], correlative microscopy [17], imaging [18][19][20][21][22], optics [23][24], microelectronics [25][26][27], three dimensional (3D) printing [27][28][29][30][31], renewable energy [32][33

Functional nanostructures for electronics, spintronics and sensors

• Anatolie S. Sidorenko

Beilstein J. Nanotechnol. 2020, 11, 1704–1706, doi:10.3762/bjnano.11.152

• ; Nanotechnology and functional nanostructures, exciting trends of the 21st century, are topics that have penetrated and influenced nearly all areas of human activity: from microelectronics to biology, from aerospace to medicine, from agriculture to novel materials engineering. One of the areas of nanoscience and

• development of microelectronics and computers, based on traditional semiconductor chips, has followed the empirical Moore’s Law (formulated by one of the founders of Intel Corporation, Gordon Moore) for over four decades. Since 1965, Intel has designed chips that fit twice as many transistors into the same

Magnetohydrodynamic stagnation point on a Casson nanofluid flow over a radially stretching sheet

• Ganji Narender,
• Kamatam Govardhan and
• Gobburu Sreedhar Sarma

Beilstein J. Nanotechnol. 2020, 11, 1303–1315, doi:10.3762/bjnano.11.114

• Brownian motion and thermophoretic properties. Due to these features, nanoparticles are widely used in catalysis, imaging, energy-based research, microelectronics, and in other applications in the medical and environmental fields. These nanoparticles are composed of metals and nonmetals and are frequently

An atomic force microscope integrated with a helium ion microscope for correlative nanoscale characterization

• Santiago H. Andany,
• Gregor Hlawacek,
• Stefan Hummel,
• Charlène Brillard,
• Mustafa Kangül and
• Georg E. Fantner

Beilstein J. Nanotechnol. 2020, 11, 1272–1279, doi:10.3762/bjnano.11.111

• used, in situ, in between exposures to assess the shrinkage, stiffness change or sputtering of the resist. More applications such as conductive AFM, piezo-force microscopy or magnetic force microscopy are within reach of the presented technology and would make AFM–HIM appealing to the microelectronics

Revealing the local crystallinity of single silicon core–shell nanowires using tip-enhanced Raman spectroscopy

• Marius van den Berg,
• Ardeshir Moeinian,
• Arne Kobald,
• Yu-Ting Chen,
• Anke Horneber,
• Steffen Strehle,
• Alfred J. Meixner and
• Dai Zhang

Beilstein J. Nanotechnol. 2020, 11, 1147–1156, doi:10.3762/bjnano.11.99

• standing topics of various investigations because silicon is still the most widely used semiconductor material for a broad range of micro- and nano-electromechanical systems, microelectronics, and photovoltaics [1][2]. Silicon nanostructures, such as bottom-up-grown nanowires [3], were also synthesized

Nanocomposite–parylene C thin films with high dielectric constant and low losses for future organic electronic devices

• Marwa Mokni,
• Gianluigi Maggioni,
• Abdelkader Kahouli,
• Sara M. Carturan,
• Walter Raniero and
• Alain Sylvestre

Beilstein J. Nanotechnol. 2019, 10, 428–441, doi:10.3762/bjnano.10.42

• dielectric, S the surface of electrodes and ε’ (often named k in the industry of microelectronics) is the dielectric constant (more rigorously called relative permittivity). As seen by this equation, the insulating gate capacitance Ci is directly proportional to ε’. Typically, for parylene C ε’ = 3.15 (at 1

Sub-wavelength waveguide properties of 1D and surface-functionalized SnO₂ nanostructures of various morphologies

• Venkataramana Bonu,
• Binaya Kumar Sahu,
• Arindam Das,
• Sankarakumar Amirthapandian,
• Sandip Dhara and
• Harish C. Barshilia

Beilstein J. Nanotechnol. 2019, 10, 379–388, doi:10.3762/bjnano.10.37

• commercial application as a gas sensor, transparent conducting electrodes, and catalyst [13][14][15]. SnO2 NSs have been used in several other areas such as sub-wavelength waveguide sensors [4], microelectronics [6], Li-ion batteries [16], and lubricants [17]. Oxygen vacancy related defects in SnO2

Raman study of flash-lamp annealed aqueous Cu₂ZnSnS₄ nanocrystals

• Yevhenii Havryliuk,
• Oleksandr Selyshchev,
• Mykhailo Valakh,
• Alexandra Raevskaya,
• Oleksandr Stroyuk,
• Constance Schmidt,
• Volodymyr Dzhagan and
• Dietrich R. T. Zahn

Beilstein J. Nanotechnol. 2019, 10, 222–227, doi:10.3762/bjnano.10.20

• serves for decades in Si microelectronics [31] and CIGS solar cell technology [32][33]. Results and Discussion Characterization of original CZTS NC films The first observation made on the difference between the samples ink0 and ink1 was an unequal morphology of the films formed. Those formed from ink0