Site-controlled formation of single Si nanocrystals in a buried SiO₂ matrix using ion beam mixing

• Xiaomo Xu,
• Thomas Prüfer,
• Daniel Wolf,
• Hans-Jürgen Engelmann,
• Lothar Bischoff,
• René Hübner,
• Karl-Heinz Heinig,
• Wolfhard Möller,
• Stefan Facsko,
• Johannes von Borany and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2018, 9, 2883–2892, doi:10.3762/bjnano.9.267

• exception of optical applications. The latter is due to its indirect band gap in the bulk state. Benefiting from their reduced size, Si NCs show optical activity [1][2] and quantum confinement behavior [3] and have inspired novel applications in microelectronics [4], optics [1] and photovoltaics [5][6]. In

Charged particle single nanometre manufacturing

• Philip D. Prewett,
• Cornelis W. Hagen,
• Claudia Lenk,
• Steve Lenk,
• Marcus Kaestner,
• Tzvetan Ivanov,
• Ahmad Ahmad,
• Ivo W. Rangelow,
• Xiaoqing Shi,
• Stuart A. Boden,
• Alex P. G. Robinson,
• Dongxu Yang,
• Sangeetha Hari,
• Marijke Scotuzzi and
• Ejaz Huq

Beilstein J. Nanotechnol. 2018, 9, 2855–2882, doi:10.3762/bjnano.9.266

• suppressed the adoption of the original Ga+ SIBL technology for silicon microelectronics and other applications. There has, however, been a paradigm shift in ion beam microscopy and lithography with the development in 2006 of the atomic level ion source (ALIS) [23]. This can be used to provide a focused beam

Controlling surface morphology and sensitivity of granular and porous silver films for surface-enhanced Raman scattering, SERS

• Sherif Okeil and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2018, 9, 2813–2831, doi:10.3762/bjnano.9.263

• ][60]. Recently, other methods emerged with the aim of producing SERS substrates at low cost, enabling their large-scale production. These methods include inkjet-printing and pen-on-paper approaches [61][62]. Plasma treatment has been widely used for the last decades for microelectronics and surface

Electromigrated electrical optical antennas for transducing electrons and photons at the nanoscale

• Arindam Dasgupta,
• Mickaël Buret,
• Nicolas Cazier,
• Marie-Maxime Mennemanteuil,
• Reinaldo Chacon,
• Kamal Hammani,
• Jean-Claude Weeber,
• Juan Arocas,
• Laurent Markey,
• Gérard Colas des Francs,
• Alexander Uskov,
• Igor Smetanin and
• Alexandre Bouhelier

Beilstein J. Nanotechnol. 2018, 9, 1964–1976, doi:10.3762/bjnano.9.187

• requirements. Silicon-based photonics for instance is offering a cost-effective strategy to merge microelectronics and photonics [1][2] and address the next generation of interchip and intrachip optical interconnects. Optical and electrical cross talk between vertical interconnect accesses, thermal envelope

Synthesis of hafnium nanoparticles and hafnium nanoparticle films by gas condensation and energetic deposition

• Irini Michelakaki,
• Nikos Boukos,
• Dimitrios A. Dragatogiannis,
• Spyros Stathopoulos,
• Costas A. Charitidis and
• Dimitris Tsoukalas

Beilstein J. Nanotechnol. 2018, 9, 1868–1880, doi:10.3762/bjnano.9.179

• constant HfO2 and its compounds are used in the field of microelectronics for the manufacturing of integrated circuits and more particularly as gate dielectrics of metal-oxide semiconductor transistors having replaced the traditional thermally grown SiO2 dielectric [34]. More recently, HfO2 was also

Toward the use of CVD-grown MoS₂ nanosheets as field-emission source

• Geetanjali Deokar,
• Nitul S. Rajput,
• Junjie Li,
• Francis Leonard Deepak,
• Wei Ou-Yang,
• Nicolas Reckinger,
• Carla Bittencourt,
• Jean-Francois Colomer and
• Mustapha Jouiad

Beilstein J. Nanotechnol. 2018, 9, 1686–1694, doi:10.3762/bjnano.9.160

• the fabricated MoS2 NSs could have a great potential as robust high-performance electron-emitter material for various applications such as microelectronics and nanoelectronics, flat-panel displays and electron-microscopy emitter tips. Keywords: chemical vapor deposition (CVD); field emission

Interaction-tailored organization of large-area colloidal assemblies

• Silvia Rizzato,
• Elisabetta Primiceri,
• Anna Grazia Monteduro,
• Adriano Colombelli,
• Angelo Leo,
• Maria Grazia Manera,
• Roberto Rella and
• Giuseppe Maruccio

Beilstein J. Nanotechnol. 2018, 9, 1582–1593, doi:10.3762/bjnano.9.150

• , Campus Ecotekne, Via Monteroni, Lecce, Italy National Institute of Gastroenterology “S. De Bellis” Research Hospital, via Turi 27, 70013, Castellana Grotte (Bari), Italy Institute for Microelectronics and Microsystems, IMM-CNR, Lecce, Italy 10.3762/bjnano.9.150 Abstract Colloidal lithography is an

Evaluation of replicas manufactured in a 3D-printed nanoimprint unit

• Manuel Caño-García,
• Morten A. Geday,
• Manuel Gil-Valverde,
• Xabier Quintana and
• José M. Otón

Beilstein J. Nanotechnol. 2018, 9, 1573–1581, doi:10.3762/bjnano.9.149

• microelectronics, optics, photonic integrated circuits, plasmonics or microfluidics [3]. NIL is customarily split into three categories, “hard”, “soft” and “hybrid” NIL [4], depending on the kind of mold employed in the transfer. Hard NIL uses molds made of quartz or silicon, and allows for the transfer of

Electrodeposition of reduced graphene oxide with chitosan based on the coordination deposition method

• Mingyang Liu,
• Yanjun Chen,
• Chaoran Qin,
• Zheng Zhang,
• Shuai Ma,
• Xiuru Cai,
• Xueqian Li and
• Yifeng Wang

Beilstein J. Nanotechnol. 2018, 9, 1200–1210, doi:10.3762/bjnano.9.111

• ) nanocomposites have also gained growing interest in the development of advanced materials [6][7][8]. The electrodeposition technique has drawn extensive attention lately since it offers an effective convergent method to integrate biology with microelectronics to build the bio-device interface, which enables

An implementation of spin–orbit coupling for band structure calculations with Gaussian basis sets: Two-dimensional topological crystals of Sb and Bi

• Sahar Pakdel,
• Mahdi Pourfath and
• J. J. Palacios

Beilstein J. Nanotechnol. 2018, 9, 1015–1023, doi:10.3762/bjnano.9.94

• , Institute for Research in Fundamental Sciences (IPM), Tehran 19395-5531, Iran Institute for Microelectronics, TU Wien, Gusshausstrasse 27–29/E360, 1040 Vienna, Austria Instituto Nicolás Cabrera (INC), and Condensed Matter Physics Institute (IFIMAC), Universidad Autónoma de Madrid, 28049 Madrid, Spain

Effect of annealing treatments on CeO₂ grown on TiN and Si substrates by atomic layer deposition

• Silvia Vangelista,
• Rossella Piagge,
• Satu Ek and
• Alessio Lamperti

Beilstein J. Nanotechnol. 2018, 9, 890–899, doi:10.3762/bjnano.9.83

• applications, this material is useful when synthesized as nanoparticles [3]. However, for specific fields, such as microelectronics and optics, its deposition as thin film highlighted some interesting physical properties, such as the lattice constant close to the value of Si (a = 0.541 nm) [4] and the

• when annealed at different temperatures and in reactive or inert gas atmospheres. A set of samples has been annealed at a temperature slightly above the growth temperature (300 °C), a value compatible with a back-end process flow typically used in microelectronics CMOS integration process, and in O2

The effect of atmospheric doping on pressure-dependent Raman scattering in supported graphene

• Egor A. Kolesov,
• Mikhail S. Tivanov,
• Olga V. Korolik,
• Olesya O. Kapitanova,
• Xiao Fu,
• Hak Dong Cho,
• Tae Won Kang and
• Gennady N Panin

Beilstein J. Nanotechnol. 2018, 9, 704–710, doi:10.3762/bjnano.9.65

• Department of Physics, Quantum-Functional Semiconductor Research Center, Nano Information Technology Academy, Dongguk University, 3-26 Pildong, Junggu, 100-715, Seoul, Korea Institute for Microelectronics Technology & High Purity Materials, RAS, 142432 Chernogolovka, Moscow district, Russia 10.3762/bjnano

• Program for Research "Photonics, opto- and microelectronics" and Russian Foundation of Basic Researches (individual project 16-33-60229), as well as partially supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (ME) (No

Atomic layer deposition and properties of ZrO₂/Fe₂O₃ thin films

• Kristjan Kalam,
• Helina Seemen,
• Peeter Ritslaid,
• Mihkel Rähn,
• Aile Tamm,
• Kaupo Kukli,
• Aarne Kasikov,
• Joosep Link,
• Raivo Stern,
• Salvador Dueñas,
• Helena Castán and
• Héctor García

Beilstein J. Nanotechnol. 2018, 9, 119–128, doi:10.3762/bjnano.9.14

• with a Zr/Fe atomic ratio of 2.0. Keywords: atomic layer deposition; metal oxides; thin films; Introduction Doped ZrO2 has been a subject of interest because of several potential applications, for example, in microelectronics as a memory material [1]. Also, doping a dielectric film with a magnetic

Comparative study of post-growth annealing of Cu(hfac)₂, Co₂(CO)₈ and Me₂Au(acac) metal precursors deposited by FEBID

• Marcos V. Puydinger dos Santos,
• Aleksandra Szkudlarek,
• Artur Rydosz,
• Carlos Guerra-Nuñez,
• Fanny Béron,
• Kleber R. Pirota,
• Stanislav Moshkalev,
• José Alexandre Diniz and
• Ivo Utke

Beilstein J. Nanotechnol. 2018, 9, 91–101, doi:10.3762/bjnano.9.11

• storage, ferroelectric tunnel junction memristors, metal interconnects for high performance integrated circuits in microelectronics and nano-optics applications, especially in the areas of plasmonics and metamaterials. Focused-electron-beam-induced deposition (FEBID) is a maskless direct-write tool

Gas-sensing behaviour of ZnO/diamond nanostructures

• Marina Davydova,
• Alexandr Laposa,
• Jiri Smarhak,
• Alexander Kromka,
• Neda Neykova,
• Josef Nahlik,
• Jiri Kroutil,
• Jan Drahokoupil and
• Jan Voves

Beilstein J. Nanotechnol. 2018, 9, 22–29, doi:10.3762/bjnano.9.4

• Marina Davydova Alexandr Laposa Jiri Smarhak Alexander Kromka Neda Neykova Josef Nahlik Jiri Kroutil Jan Drahokoupil Jan Voves Institute of Physics v.v.i., Academy of Sciences of the Czech Republic, Na Slovance 2, 18221 Prague, Czech Republic Department of Microelectronics, Faculty of Electrical

Strategy to discover full-length amyloid-beta peptide ligands using high-efficiency microarray technology

• Clelia Galati,
• Natalia Spinella,
• Lucio Renna,
• Danilo Milardi,
• Francesco Attanasio,
• Michele Francesco Maria Sciacca and
• Corrado Bongiorno

Beilstein J. Nanotechnol. 2017, 8, 2446–2453, doi:10.3762/bjnano.8.243

• of 10 µM. Fabrication of HESs HESs were prepared by exploiting the highly controlled materials and technologies conventionally used for the construction of microelectronics devices. The detection sensitivity is essentially determined by the signal-to-noise (S/N) ratio. A simple approach to increasing

Changes of the absorption cross section of Si nanocrystals with temperature and distance

• Michael Greben,
• Petro Khoroshyy,
• Sebastian Gutsch,
• Daniel Hiller,
• Margit Zacharias and
• Jan Valenta

Beilstein J. Nanotechnol. 2017, 8, 2315–2323, doi:10.3762/bjnano.8.231

• attainable purity – has been a dominant material for microelectronics and photovoltaics. However, the constantly increasing energy consumption and environmental issues challenge researchers to develop fundamentally new concepts to overcome the limitations of current technologies. The nanocrystalline form of

Advances and challenges in the field of plasma polymer nanoparticles

• Andrei Choukourov,
• Pavel Pleskunov,
• Daniil Nikitin,
• Valerii Titov,
• Artem Shelemin,
• Mykhailo Vaidulych,
• Anna Kuzminova,
• Pavel Solař,
• Jan Hanuš,
• Jaroslav Kousal,
• Ondřej Kylián,
• Danka Slavínská and
• Hynek Biederman

Beilstein J. Nanotechnol. 2017, 8, 2002–2014, doi:10.3762/bjnano.8.200

• predictable structure hampered the extensive use of plasma polymers in real world applications, although a multitude of potential utilizations have been suggested. In the mid-twentieth century, such deposits were studied as possible candidates for the production of thin dielectric films for microelectronics

Imidazolium-based ionic liquids used as additives in the nanolubrication of silicon surfaces

• Patrícia M. Amorim,
• Ana M. Ferraria,
• Rogério Colaço,
• Luís C. Branco and
• Benilde Saramago

Beilstein J. Nanotechnol. 2017, 8, 1961–1971, doi:10.3762/bjnano.8.197

• worst tribological behavior in what concerns CoF, confirmed the stronger interaction with [EtSO4]. The excellent results obtained with [EMIM][EtSO4] and [EVIM][EtSO4] encourage a deeper research on this type of additives with the objective of substituting the traditional oils in microelectronics

Oxidative chemical vapor deposition of polyaniline thin films

• Yuriy Y. Smolin,
• Masoud Soroush and
• Kenneth K. S. Lau

Beilstein J. Nanotechnol. 2017, 8, 1266–1276, doi:10.3762/bjnano.8.128

• in recent years for their use in solar cells [1][2][3][4][5][6], batteries [7], supercapacitors [8][9][10][11][12], sensors [13], biosensors [14], and microelectronics [15][16]. As devices continue to decrease in size, the integration of conducting polymers within nanomaterials using conventional

A top-down approach for fabricating three-dimensional closed hollow nanostructures with permeable thin metal walls

• Carlos Angulo Barrios and
• Víctor Canalejas-Tejero

Beilstein J. Nanotechnol. 2017, 8, 1231–1237, doi:10.3762/bjnano.8.124

• is typically required to create integrated systems based on multifunctional devices on a chip. For the latter purpose, top-down approaches based on fabrication methods used in the microelectronics industry are particularly well-suited because of the patterning design flexibility and controllability

The integration of graphene into microelectronic devices

• Guenther Ruhl,
• Sebastian Wittmann,
• Matthias Koenig and
• Daniel Neumaier

Beilstein J. Nanotechnol. 2017, 8, 1056–1064, doi:10.3762/bjnano.8.107

• graphene in 2004 [1] a lot of possible applications have been envisioned. Especially in the field of microelectronics graphene holds the promise for faster, more sensitive and even completely novel devices [2]. So, graphene was claimed as one possible material to overcome the foreseeable limits of silicon

• crucial for commercializing graphene for microelectronics. Additionally, substrate interactions are strongly degrading the graphene quality. Hexagonal boron nitride has been identified as the ideal substrate material, but it is not available yet in the required quality for producing wafers. In order to

• graphene metal contacts. From today’s perspective the main issues for wafer-scale integration of graphene are well known, and the future of graphene (and other two-dimensional materials, namely transition metal dichalkogenides) in microelectronics depends on the successful solution of these problems

CVD transfer-free graphene for sensing applications

• Chiara Schiattarella,
• Sten Vollebregt,
• Tiziana Polichetti,
• Brigida Alfano,
• Ettore Massera,
• Maria Lucia Miglietta,
• Girolamo Di Francia and
• Pasqualina Maria Sarro

Beilstein J. Nanotechnol. 2017, 8, 1015–1022, doi:10.3762/bjnano.8.102

• Microelectronics, Delft, The Netherlands ENEA C.R. Piazzale Enrico Fermi, 1, 80055 Portici (Naples), Italy 10.3762/bjnano.8.102 Abstract The sp2 carbon-based allotropes have been extensively exploited for the realization of gas sensors in the recent years because of their high conductivity and large specific

Vapor-phase-synthesized fluoroacrylate polymer thin films: thermal stability and structural properties

• Paul Christian and
• Anna Maria Coclite

Beilstein J. Nanotechnol. 2017, 8, 933–942, doi:10.3762/bjnano.8.95

• surfaces are used as biocompatible surfaces [1], antifouling coatings [2], and as low dielectric constant materials [3] for microelectronics. Perfluoroacrylates are particularly appealing for such applications, as they combine the hydrophobic properties of the fluorinated pendant groups with easy

Self-assembly of silicon nanowires studied by advanced transmission electron microscopy

• Marta Agati,
• Guillaume Amiard,
• Vincent Le Borgne,
• Paola Castrucci,
• Richard Dolbec,
• Maurizio De Crescenzi,
• My Alì El Khakani and
• Simona Boninelli

Beilstein J. Nanotechnol. 2017, 8, 440–445, doi:10.3762/bjnano.8.47

• dimensionality to be used as building blocks to improve the functionality of next-generation devices [2]. So far, conventional manufacturing processes based on top-down methods have been employed in Si-based microelectronics. These methods have encountered, among others, a non-trivial issue related to the cost