Enhancement in thermoelectric properties due to Ag nanoparticles incorporated in Bi₂Te₃ matrix

• Srashti Gupta,
• Dinesh Chandra Agarwal,
• Bathula Sivaiah,
• Sankarakumar Amrithpandian,
• Kandasami Asokan,
• Ajay Dhar,
• Binaya Kumar Panigrahi,
• Devesh Kumar Avasthi and
• Vinay Gupta

Beilstein J. Nanotechnol. 2019, 10, 634–643, doi:10.3762/bjnano.10.63

• ; nanoparticles; power factor; thermoelectric power; Introduction Bismuth telluride (Bi2Te3) is an important semiconductor widely used as thermoelectric (TE) material for room-temperature applications to convert waste heat into electricity. The efficiency of a TE material can be defined by figure of merit (ZT

• theoretical calculations for the introduction of metal nano-inclusions in TE materials. This theory predicts the band bending at the metal–semiconductor interface will allow for the transmission of high energy electrons along with a blocking of low energy electrons. This electron energy filter results in

• enhancement of the Seebeck coefficient for a given carrier concentration. Several groups have used this approach using different metal–semiconductor combinations to improve thermoelectric properties [13][14]. One group has reported the synthesis of bismuth metal nanoparticles (NPs) were through a solvothermal

Coexisting spin and Rabi oscillations at intermediate time regimes in electron transport through a photon cavity

• Vidar Gudmundsson,
• Hallmann Gestsson,
• Nzar Rauf Abdullah,
• Chi-Shung Tang,
• Andrei Manolescu and
• Valeriu Moldoveanu

Beilstein J. Nanotechnol. 2019, 10, 606–616, doi:10.3762/bjnano.10.61

• [7][8][9][10][11] interest is growing in electron transport through semiconductor systems in photon cavities. The success of circuit quantum electrodynamics (QED) devices with superconducting quantum bits coupled to microwave cavities has pushed for the evolution of hybrid mesoscopic circuits

• the strength of the electron–photon interaction, gEM. The important message we want to convey from our modeling of time-dependent electron transport through multilevel interacting nanoscale two-dimensional semiconductor systems embedded in 3D photon cavities is that the Rabi oscillations in the

Hydrophilicity and carbon chain length effects on the gas sensing properties of chemoresistive, self-assembled monolayer carbon nanotube sensors

• Juan Casanova-Cháfer,
• Carla Bittencourt and
• Eduard Llobet

Beilstein J. Nanotechnol. 2019, 10, 565–577, doi:10.3762/bjnano.10.58

• depending on whether metallic nanotubes are above or below the percolation threshold [29][30]. In contrast, multiwall CNT mats always present a mild p-type semiconductor behavior which improves device to device reproducibility without the added burden of sorting nanotubes according to their metallic or

• , already reported for semiconductor chemoresistors. From an applications perspective, the range of nitrogen dioxide concentrations tested here (tens of ppm) is still too high for monitoring this species in ambient conditions (tens of ppb). However, there is room for improving these results, for example, by

Direct observation of the CVD growth of monolayer MoS₂ using in situ optical spectroscopy

• Claudia Beatriz López-Posadas,
• Yaxu Wei,
• Wanfu Shen,
• Daniel Kahr,
• Michael Hohage and
• Lidong Sun

Beilstein J. Nanotechnol. 2019, 10, 557–564, doi:10.3762/bjnano.10.57

• the temperature distribution in the CVD reactor has been revealed. Our results demonstrate the great potential of real time, in situ optical spectroscopy to assist the precisely controlled growth of 2D semiconductor materials. Keywords: chemical vapor deposition (CVD); in situ differential optical

• that the potential advantages of 2D TMDCs used as the active materials for various devices have been established, the primary focus is now the cost-efficient, reliable, and high-throughput synthesis of 2D TMDCs using processes compatible with current semiconductor technology. Various approaches for

• , the DT signal at a higher energy of 3.2 eV begins to dominate. Based on its energy position, this feature can be attributed to the absorption of MoO3 [32][33]. As a semiconductor, MoO3 shows a bandgap around 3 eV. Considering the high temperature of the substrate, we can exclude the possibility that

Temperature-dependent Raman spectroscopy and sensor applications of PtSe₂ nanosheets synthesized by wet chemistry

• Mahendra S. Pawar and
• Dattatray J. Late

Beilstein J. Nanotechnol. 2019, 10, 467–474, doi:10.3762/bjnano.10.46

• semimetallic nature and single-layer PtSe2 has a semiconducting nature with a bandgap of 1.2 eV. Bilayer PtSe2 is also a semiconducting material but with a slightly smaller band gap than the monolayer material [19]. This layer-dependent conversion of semimetal-to-semiconductor transition has potential for

Reduced graphene oxide supported C₃N₄ nanoflakes and quantum dots as metal-free catalysts for visible light assisted CO₂ reduction

• Md Rakibuddin and
• Haekyoung Kim

Beilstein J. Nanotechnol. 2019, 10, 448–458, doi:10.3762/bjnano.10.44

• , and CH3OH is one of the sustainable ways to address the issues of both global warming and the energy crisis [1][2][3][4][5][6]. So far, a variety of semiconductor photocatalysts, such as ZnO, TiO2, WO3, and CdS have been developed for the photoreduction of CO2 [7][8][9][10]. However, poor separation

Nanocomposite–parylene C thin films with high dielectric constant and low losses for future organic electronic devices

• Marwa Mokni,
• Gianluigi Maggioni,
• Abdelkader Kahouli,
• Sara M. Carturan,
• Walter Raniero and
• Alain Sylvestre

Beilstein J. Nanotechnol. 2019, 10, 428–441, doi:10.3762/bjnano.10.42

• devices as a gate dielectric, coating insulator film, or flexible substrate [3][4][5] due to its numerous advantageous properties. PPXC films are biocompatible and environmentally friendly [6][7][8][9]. Its deposition process makes it accessible as a coating for many semiconductor polymers [10] for

• gate dielectric, which is a crucial requirement for the performance of the OFETs and for the device reliability. Charge-carrier mobility is improved in the presence of this polymer [17]. PPXC is also an appropriate hydroxyl-free gate dielectric and prevents trapping of electrons at the semiconductor

• improvement in the roughness for this sample must be reached before integration for OFET as this structural parameter is critical in the deposition of organic semiconductor layers and will affect the performance [70][71]. Conclusion Nanocomposite–parylene C (NCPC) were synthetized at room temperature by

Advanced scanning probe lithography using anatase-to-rutile transition to create localized TiO₂ nanorods

• Julian Kalb,
• Vanessa Knittel and
• Lukas Schmidt-Mende

Beilstein J. Nanotechnol. 2019, 10, 412–418, doi:10.3762/bjnano.10.40

• nanostructures. Keywords: hydrothermal crystal growth; lithography; nanostructures; seed crystals; surface processes; oxides; Introduction Rutile TiO2 is a chemically stable semiconductor with a band gap of 3.1 eV [1]. Dependent on the kind of nanostructure and doping, it has outstanding electronic and

Integration of LaMnO_3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD

• Raquel Rodriguez-Lamas,
• Dolors Pla,
• Odette Chaix-Pluchery,
• Benjamin Meunier,
• Fabrice Wilhelm,
• Andrei Rogalev,
• Laetitia Rapenne,
• Xavier Mescot,
• Quentin Rafhay,
• Hervé Roussel,
• Michel Boudard,
• Carmen Jiménez and
• Mónica Burriel

Beilstein J. Nanotechnol. 2019, 10, 389–398, doi:10.3762/bjnano.10.38

• –insulator/semiconductor–metal, MIM), namely memristors, when a non-volatile change of resistance is produced under the effect of an applied current or electric field [1]. As these resistance changes are reversible, RS is suitable for redox-based resistive switching random access memory (Re-RAM) applications

• under ambient conditions within a Faraday cage with microprobe manipulators using a B1500 Agilent semiconductor parameter analyzer. Results and Discussion Dense and homogeneous LaMnO3+δ (LMO) thin films with variable oxygen content (δ) have been deposited by pulsed injection metal organic chemical

Sub-wavelength waveguide properties of 1D and surface-functionalized SnO₂ nanostructures of various morphologies

• Venkataramana Bonu,
• Binaya Kumar Sahu,
• Arindam Das,
• Sankarakumar Amirthapandian,
• Sandip Dhara and
• Harish C. Barshilia

Beilstein J. Nanotechnol. 2019, 10, 379–388, doi:10.3762/bjnano.10.37

• electronics and optical devices [6][7]. The controlled growth of single crystalline 1D semiconductor nanostructures (NSs) of various dimensionality with desired chemical composition and precise doping level has offered numerous possibilities for making model devices and integration strategies [6][8

• light during the medical process. Among metal oxides, SnO2 NWs, an n-type direct wide-band semiconductor (Eg = 3.6 eV at 300 K), was proved to be excellent sub-wavelength waveguide [3][4][5][6][7][12]. The high refractive index (n = 2.1) of SnO2 allows NWs with an optimal size range (100 to 500 nm) to

Geometrical optimisation of core–shell nanowire arrays for enhanced absorption in thin crystalline silicon heterojunction solar cells

• Robin Vismara,
• Olindo Isabella,
• Andrea Ingenito,
• Fai Tong Si and
• Miro Zeman

Beilstein J. Nanotechnol. 2019, 10, 322–331, doi:10.3762/bjnano.10.31

• . They associate the calculated optima with specific, diameter-tunable nanophotonic resonances, implying that for a specific semiconductor material an optimal value of the diameter can be found that maximises absorption owing to the excitation of resonant modes at specific wavelengths. The final result

Electromagnetic analysis of the lasing thresholds of hybrid plasmon modes of a silver tube nanolaser with active core and active shell

• Denys M. Natarov,
• Trevor M. Benson and
• Alexander I. Nosich

Beilstein J. Nanotechnol. 2019, 10, 294–304, doi:10.3762/bjnano.10.28

• electromagnetic waves non-attenuating in time, one must equip it with an active zone filled with a material possessing optical gain. Such material can be a semiconductor, a dye-doped polymer, or a material doped with ions of erbium or some other rare-earth elements. All of them are able, under pumping, to

A Ni(OH)₂ nanopetals network for high-performance supercapacitors synthesized by immersing Ni nanofoam in water

• Donghui Zheng,
• Man Li,
• Yongyan Li,
• Chunling Qin,
• Yichao Wang and
• Zhifeng Wang

Beilstein J. Nanotechnol. 2019, 10, 281–293, doi:10.3762/bjnano.10.27

• performance. Moreover, they are environmentally friendly, easily available and inexpensive [11][12][13][14]. However, bulk Ni(OH)2 is a semiconductor material with poor electrical conductivity [15], which leads to low capacity at a high scan rate and poor cycling stability. In order to overcome this

Site-specific growth of oriented ZnO nanocrystal arrays

• Rekha Bai,
• Dinesh K. Pandya,
• Sujeet Chaudhary,
• Veer Dhaka,
• Vladislav Khayrudinov,
• Jori Lemettinen,
• Christoffer Kauppinen and
• Harri Lipsanen

Beilstein J. Nanotechnol. 2019, 10, 274–280, doi:10.3762/bjnano.10.26

• ; growth kinetics; nanocrystals; nucleation; twinning; zinc oxide; Introduction Metal oxide semiconductor nanostructures are quite interesting not only in terms of the basic growth mechanism involved in their fabrication, but also due to the large number of applications based on them in the field of

• nanoscale optoelectronics [1][2][3][4]. ZnO is an important direct band gap (≈3.3 eV), nontoxic, metal oxide semiconductor, which can readily be used for optoelectronic applications. The properties of ZnO can be tailored by changing the morphology of the structures. Thus, fabrication of ZnO having different

• to their versatile applications [14]. Self-assembled NC arrays collectively can possibly demonstrate new properties, unlike the fixed properties of single NCs, forming new nanostructures with useful functionalities. Semiconductor NC self-assembly depends on the shape and size of the NCs, a broad

Interaction of Te and Se interlayers with Ag or Au nanofilms in sandwich structures

• Arkadiusz Ciesielski,
• Lukasz Skowronski,
• Marek Trzcinski,
• Ewa Górecka,
• Wojciech Pacuski and
• Tomasz Szoplik

Beilstein J. Nanotechnol. 2019, 10, 238–246, doi:10.3762/bjnano.10.22

• , Poland, University of Warsaw, Department of Chemistry, Pasteura 1 Str., 02-093 Warsaw, Poland 10.3762/bjnano.10.22 Abstract Noble metal nanolayers on flat substrates are often deposited with the use of semiconductor interlayers, which may strongly interact with the noble metal overlayer. We investigated

• , metal–semiconductor structures, where the thickness of a single film is in the nanometer range. Such structures exhibit several interesting properties: reduced scattering losses due to the smoothened surface of the metal layer [1][2][3][4][5][6], highly controllable effective optical parameters [7][8

• semiconductor atoms essentially act as nanoparticles which absorb light due to localized plasmon excitation [25][26]. If that is the case, such additional bands should be observable in the permittivity of any plasmonic metal thin layer film in which a semiconductor segregates. Of the semiconductors, only Ge and

Raman study of flash-lamp annealed aqueous Cu₂ZnSnS₄ nanocrystals

• Yevhenii Havryliuk,
• Oleksandr Selyshchev,
• Mykhailo Valakh,
• Alexandra Raevskaya,
• Oleksandr Stroyuk,
• Constance Schmidt,
• Volodymyr Dzhagan and
• Dietrich R. T. Zahn

Beilstein J. Nanotechnol. 2019, 10, 222–227, doi:10.3762/bjnano.10.20

• Yevhenii Havryliuk Oleksandr Selyshchev Mykhailo Valakh Alexandra Raevskaya Oleksandr Stroyuk Constance Schmidt Volodymyr Dzhagan Dietrich R. T. Zahn V. E. Lashkaryov Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, Kyiv, 03028, Ukraine Semiconductor Physics, Chemnitz

• , project “ChaSe”), Volkswagen Foundation (project “New functionalities of semiconductor nanocrystals by controllable coupling to molecules”), by the European Union’s Horizon 2020 research and innovation program under the Marie Skłodowska-Curie grant agreement No 701254, and by NAS of Ukraine (project

Wet chemistry route for the decoration of carbon nanotubes with iron oxide nanoparticles for gas sensing

• Hussam M. Elnabawy,
• Juan Casanova-Chafer,
• Badawi Anis,
• Mostafa Fedawy,
• Mattia Scardamaglia,
• Carla Bittencourt,
• Ahmed S. G. Khalil,
• Eduard Llobet and
• Xavier Vilanova

Beilstein J. Nanotechnol. 2019, 10, 105–118, doi:10.3762/bjnano.10.10

• ][14]. Among them, iron oxide is a semiconductor that has been used in many gas sensing applications because of its low cost and simple preparation [14][15]. This oxide has been used in the detection of acetone, H2S, several alcohols, CO, acetic acid and liquefied petroleum gas (LPG) [16] and forming

• adsorption of NO2 on iron oxide nanoparticles, as previously reported for semiconductor metal oxide chemoresistors [35]. A deeper analysis of the sensor behavior reflected in Figure 7 and Figure 11 shows that both pristine and decorated CNT films behave as a p-type semiconductor. When nitrogen dioxide reacts

Surface plasmon resonance enhancement of photoluminescence intensity and bioimaging application of gold nanorod@CdSe/ZnS quantum dots

• Siyi Hu,
• Yu Ren,
• Yue Wang,
• Jinhua Li,
• Junle Qu,
• Liwei Liu,
• Hanbin Ma and
• Yuguo Tang

Beilstein J. Nanotechnol. 2019, 10, 22–31, doi:10.3762/bjnano.10.3

• can be easily tuned from the visible to the near-infrared (NIR) spectrum. QDs have emerged as the next generation of luminescence materials, and they have been widely used as nanoprobes for bioimaging and biosensing. As semiconductor nanocrystals, their large surface-to-volume ratio is advantageous

• distance using the combined strong electrostatic adsorption. Secondly, FA was conjugated with this composite nanoparticle for biological applications, where the FA renders the nanoparticle useful for the specific targeting of cancer cells [28][29]. According to current knowledge, when bulk semiconductor

• nanomaterials are irradiated with light of a certain wavelength, the valence electrons transition back to the conduction band. Most of the conduction band electrons fall back into the deep electron traps and nonradiative transitions take the form of quenching. Semiconductor QDs with relatively shallow surface

Zn/F-doped tin oxide nanoparticles synthesized by laser pyrolysis: structural and optical properties

• Florian Dumitrache,
• Iuliana P. Morjan,
• Elena Dutu,
• Ion Morjan,
• Claudiu Teodor Fleaca,
• Monica Scarisoreanu,
• Alina Ilie,
• Marius Dumitru,
• Cristian Mihailescu,
• Adriana Smarandache and
• Gabriel Prodan

Beilstein J. Nanotechnol. 2019, 10, 9–21, doi:10.3762/bjnano.10.2

• SnO2 in its undoped form is an n-type semiconductor with a direct bandgap of 3.6 eV at room temperature. Its n-type conductivity is due to oxygen vacancies in its rutile structure. The bandgap, starting from the bulk value, increases as the size of the nanocrystal decreases, due to electron confinement

Electrolyte tuning in dye-sensitized solar cells with N-heterocyclic carbene (NHC) iron(II) sensitizers

• Mariia Karpacheva,
• Catherine E. Housecroft and
• Edwin C. Constable

Beilstein J. Nanotechnol. 2018, 9, 3069–3078, doi:10.3762/bjnano.9.285

• consistent with a higher value of JSC (Table 5). Combinations of lower Cμ and higher Rrec for E2b and higher Cμ and lower Rrec for E2e lead to similar DSC performances. Greater recombination resistance and low JSC values are observed when fewer electrons are injected to the semiconductor. Comparable Rtr

• value [54]. A larger Ld and a longer lifetime as observed for electrolyte E2c result, respectively, in a higher electron density and lower charge loss in the semiconductor. For each electrolyte, the transport time (τt) is lower than τ, resulting in efficient electron transport through TiO2. Trends in

Colloidal chemistry with patchy silica nanoparticles

• Pierre-Etienne Rouet,
• Cyril Chomette,
• Laurent Adumeau,
• Etienne Duguet and
• Serge Ravaine

Beilstein J. Nanotechnol. 2018, 9, 2989–2998, doi:10.3762/bjnano.9.278

• satellites within the dimples of valence-endowed patchy nanoparticles. The synthetic route is highly versatile and can be extended to other precursors such as metallic or semiconductor nanoparticles, opening the way to the synthesis of a broad panel of (multi)functional nanomaterials with a controlled shape

• and composition. These new colloidal analogues of molecules could serve as building blocks for the assembly of the next generation (meta-)materials. For example, attaching four different satellites (such as one gold, one silver, one iron oxide and one semiconductor nanoparticle) around a central sp3

In situ characterization of nanoscale contaminations adsorbed in air using atomic force microscopy

• Jesús S. Lacasa,
• Lisa Almonte and
• Jaime Colchero

Beilstein J. Nanotechnol. 2018, 9, 2925–2935, doi:10.3762/bjnano.9.271

• . In ambient air, surfaces are covered by a variety of molecules and nanoparticles that drastically modify its properties as compared to ideal and clean surfaces. Quite a few fields ranging from fundamental studies of wetting phenomena [6] to semiconductor industry [7] are very aware of the importance

Site-controlled formation of single Si nanocrystals in a buried SiO₂ matrix using ion beam mixing

• Xiaomo Xu,
• Thomas Prüfer,
• Daniel Wolf,
• Hans-Jürgen Engelmann,
• Lothar Bischoff,
• René Hübner,
• Karl-Heinz Heinig,
• Wolfhard Möller,
• Stefan Facsko,
• Johannes von Borany and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2018, 9, 2883–2892, doi:10.3762/bjnano.9.267

• between the SiO2 layers and perpendicular to the incident Ne+ beam. Keywords: helium ion microscopy; ion beam mixing; Monte Carlo simulations; phase separation; single electron transistor; Introduction Silicon has been the main material in the semiconductor industry for almost all use cases with the

• -oxide-semiconductor (CMOS) technology and thus have yet to be integrated into a cost-efficient Si-based technology. Multiple methods have been proposed and optimized for Si NC fabrication, including plasma-enhanced chemical vapor deposition (PECVD) [4][10], magnetron sputtering [11][12], laser-induced

Graphene-enhanced metal oxide gas sensors at room temperature: a review

• Dongjin Sun,
• Yifan Luo,
• Marc Debliquy and
• Chao Zhang

Beilstein J. Nanotechnol. 2018, 9, 2832–2844, doi:10.3762/bjnano.9.264

• for semiconductor gas sensors [6]. Graphene oxide (GO), as a derivative of graphene, is prepared via the oxidation of graphene. Epoxy groups, hydroxy groups and defects are produced at the surface when oxidizing graphene [7][8][9][10]. These variations will alter the electronic structure of graphene

• , thus converting it to a semiconductor. Choi et al. [11] prepared GO room-temperature gas sensors by a modified Hummers method. The group found that the sensitivity and repeatability of the sensor depended on the amount of oxygen functional groups on the surface of GO. Moreover, hydroxy groups were the

• ]. The oxygen functional groups that locate on the surface of rGO lead to an electron transfer from rGO to oxygen functional groups, and holes become the main charge carriers, indicating that rGO acts as a p-type semiconductor [14][15][16]. Zhang et al. [17] prepared rGO room-temperature gas sensor with

Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Eleonora M. Danilina and
• Sergei N. Chebotarev

Beilstein J. Nanotechnol. 2018, 9, 2794–2801, doi:10.3762/bjnano.9.261

• photodetectors (QWIPs) [4]. The QWIPs, in turn, have a simpler technology but a low quantum efficiency and require cooling. One way to solve these problems is to grow semiconductor heterostructures in which QDs are embedded. The localization of photogenerated charge carriers in a quantum dot along three

• , since it allows for a control of the energy of sputtered atomic fluxes and their interaction with the growth surface [39]. IBD plays an important role in the semiconductor materials technology [40][41][42][43][44][45][46][47][48]. In this work, we study the influence of QD vertical stacking, the