Detecting stable adsorbates of (1S)-camphor on Cu(111) with Bayesian optimization

• Jari Järvi,
• Patrick Rinke and
• Milica Todorović

Beilstein J. Nanotechnol. 2020, 11, 1577–1589, doi:10.3762/bjnano.11.140

• technologies are increasingly based on advanced functional materials, which are often blends of organic and inorganic components. For example, in search for renewable energy solutions, hybrid perovskites are currently the best candidate to replace silicon in our solar cells [1]. In medicine, hybrid materials

Fabrication of nano/microstructures for SERS substrates using an electrochemical method

• Jingran Zhang,
• Tianqi Jia,
• Xiaoping Li,
• Junjie Yang,
• Zhengkai Li,
• Guangfeng Shi,
• Xinming Zhang and
• Zuobin Wang

Beilstein J. Nanotechnol. 2020, 11, 1568–1576, doi:10.3762/bjnano.11.139

• lithography (EBL) and wet etching consists of 1 μm deep square-based pyramidal pits in the silicon surface. A rhodamine solution (10−4 mol·L−1) is then detected using the Klarite substrate. Candeloro et al. [24] employed EBL and reactive ion etching to machine nanoholes of 400 nm diameter and 50 nm depth

• ion beam (FIB) technology can also be used to directly fabricate high-precision nanostructures on surfaces made of silicon, silicon dioxide and metal [27][28][29][30][31][32][33]. FIB technology is therefore used as a processing method for SERS substrates. Using the FIB method, Lin et al. [29

• ] fabricated micro/nanostructures on the surface of Au-coated single crystal silicon. By changing the etching time and current, micro/nanostructures with different size scales and geometric shapes (such as hexagons and pentagons) were obtained. Compared with other geometries, the hexagonal micro/nanostructure

Electrokinetic characterization of synthetic protein nanoparticles

• Daniel F. Quevedo,
• Cody J. Lentz,
• Adriana Coll de Peña,
• Yazmin Hernandez,
• Nahal Habibi,
• Rikako Miki,
• Joerg Lahann and
• Blanca H. Lapizco-Encinas

Beilstein J. Nanotechnol. 2020, 11, 1556–1567, doi:10.3762/bjnano.11.138

• posts (Figure 2b and Figure S1, Supporting Information File 1) were made from PDMS employing standard soft lithography techniques. To create a device, PDMS (Dow Corning, Midland, MI) was cast onto a negative replica mold made with a silicon wafer (Silicon Inc., Boise, ID) and an SU-8 3050 photoresist

Optically and electrically driven nanoantennas

• Monika Fleischer,
• Dai Zhang and
• Alfred J. Meixner

Beilstein J. Nanotechnol. 2020, 11, 1542–1545, doi:10.3762/bjnano.11.136

• revealing local structural properties is illustrated in [49], where crystalline and amorphous regions within core–shell silicon nanowires are discerned with an optical resolution of a few nanometers. This study further demonstrates that it is possible to combine polarization angle-resolved experiments with

Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir

• Mathias Franz,
• Romy Junghans,
• Paul Schmitt,
• Adriana Szeghalmi and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2020, 11, 1439–1449, doi:10.3762/bjnano.11.128

• Abstract The wafer-level integration of high aspect ratio silicon nanostructures is an essential part of the fabrication of nanodevices. Metal-assisted chemical etching (MACE) is a promising low-cost and high-volume technique for the generation of vertically aligned silicon nanowires. Noble metal

• nanoparticles were used to locally etch the silicon substrate. This work demonstrates a bottom-up self-assembly approach for noble metal nanoparticle formation and the subsequent silicon wet etching. The macroscopic wafer patterning has been done by using a poly(methyl methacrylate) masking layer. Different

• with a reflectance below 0.3%. The demonstrated technology can be integrated into common fabrication processes for microelectromechanical systems. Keywords: black silicon; bottom-up; metal-assisted chemical etching (MACE); nanowires; wafer-level integration; Introduction Silicon nanostructures

Protruding hydrogen atoms as markers for the molecular orientation of a metallocene

• Linda Laflör,
• Michael Reichling and
• Philipp Rahe

Beilstein J. Nanotechnol. 2020, 11, 1432–1438, doi:10.3762/bjnano.11.127

• experiments (5 and 77 K) with qPlus sensors as well as at room temperature using silicon cantilevers [22]. Although the NC-AFM tips were not functionalised, i.e., not specifically terminated with atoms or molecules for imaging, we find a very good agreement between the experimental data and probe particle

• evaporator (Focus GmbH, Huenstetten, Germany) on freshly prepared Si(111)-(7 × 7) surfaces held at about 930 K. Silicon substrates were highly B-doped p-type Si(111) samples (Institute of Electronic Materials Technology, Warsaw, Poland) with the (7 × 7) reconstruction prepared by flash cycles. Further

• FDCA molecule to the tip with the carbonyl moiety facing the surface. This would be in line with earlier NC-AFM experiments of naphthalene tetracarboxylic diimide (NTCDI) adsorbed on Ag-terminated silicon surfaces [37]. In the latter case, the observation of submolecular contrast similar to images

One-step synthesis of carbon-supported electrocatalysts

• Sebastian Tigges,
• Nicolas Wöhrl,
• Ivan Radev,
• Ulrich Hagemann,
• Markus Heidelmann,
• Thai Binh Nguyen,
• Stanislav Gorelkov,
• Stephan Schulz and
• Axel Lorke

Beilstein J. Nanotechnol. 2020, 11, 1419–1431, doi:10.3762/bjnano.11.126

• (including preheating), and M is the molar mass of the precursor (393.302 g/mol). The material deposition was mainly done on 1 × 1 cm2 silicon substrates. In preparation for the cyclic voltammetry measurements, glassy carbon electrodes (GCEs; diameter 4 mm, Catalog No. 013338, ALS Co., Ltd.) were used as

Analysis of catalyst surface wetting: the early stage of epitaxial germanium nanowire growth

• Owen C. Ernst,
• Felix Lange,
• David Uebel,
• Thomas Teubner and
• Torsten Boeck

Beilstein J. Nanotechnol. 2020, 11, 1371–1380, doi:10.3762/bjnano.11.121

• theoretical, (ii) empirical, and (iii) semi-empirical models. The formation of nanometre-sized gold particles on silicon and silicon oxide substrates is investigated in detail. In addition, the strengths and weaknesses of the three models are elucidated, the different substrates used are compared, and the

• chalcopyrites [11], or precursors for complex structures, such as nanowires [12]. Silicon, germanium and silicon oxide nanowires, for example, can be formed on different substrates by using metal catalysts in the form of tin, indium or gold nanodroplets [13][14][15]. Such nanometre-sized one-dimensional

• the formation of the nanostructures. The wetting behaviour of gold deposited either on silicon or silicon oxide wafers was studied. The property of gold to form a layer, droplets, or particles on silicon or silicon oxide was theoretically described and experimentally demonstrated by ultrahigh vacuum

Atomic defect classification of the H–Si(100) surface through multi-mode scanning probe microscopy

• Jeremiah Croshaw,
• Thomas Dienel,
• Taleana Huff and
• Robert Wolkow

Beilstein J. Nanotechnol. 2020, 11, 1346–1360, doi:10.3762/bjnano.11.119

• Jeremiah Croshaw Thomas Dienel Taleana Huff Robert Wolkow Department of Physics, University of Alberta, Edmonton, Alberta, T6G 2J1, Canada Quantum Silicon, Inc., Edmonton, Alberta, T6G 2M9, Canada Department of Materials Science and Engineering, Cornell University, Ithaca NY 14853, USA

• available via a single imaging mode. We demonstrate this through the characterization and classification of several commonly found defects of the hydrogen-terminated silicon (100)-2 × 1 surface (H–Si(100)-2 × 1) by using six unique imaging modes. The H–Si surface was chosen as it provides a promising

• formed reducing the area available for patterning. By probing the surface using the different interactivity afforded by either hydrogen- or silicon-terminated tips, we are able to extract new insights regarding the atomic and electronic structure of these defects. This allows for the confirmation of

Controlling the proximity effect in a Co/Nb multilayer: the properties of electronic transport

• Sergey Bakurskiy,
• Mikhail Kupriyanov,
• Nikolay V. Klenov,
• Igor Soloviev,
• Andrey Schegolev,
• Roman Morari,
• Yury Khaydukov and
• Anatoli S. Sidorenko

Beilstein J. Nanotechnol. 2020, 11, 1336–1345, doi:10.3762/bjnano.11.118

• between two neighboring films of ferromagnetic layers grown using cobalt (99.95% purity). Pure silicon (99.999%) was the third target used to create a passivating layer to prevent structure oxidation. The details regarding the deposition technology were previously described [27]. The structure for the

Magnetohydrodynamic stagnation point on a Casson nanofluid flow over a radially stretching sheet

• Ganji Narender,
• Kamatam Govardhan and
• Gobburu Sreedhar Sarma

Beilstein J. Nanotechnol. 2020, 11, 1303–1315, doi:10.3762/bjnano.11.114

• . In addition, Casson fluids have been implemented in the preparation of printing ink, silicon suspensions and polymers [7]. Over the past few years, a vast range of experiments and investigations have been carried out using Casson fluids due to their broad applicability in the scientific and

An atomic force microscope integrated with a helium ion microscope for correlative nanoscale characterization

• Santiago H. Andany,
• Gregor Hlawacek,
• Stefan Hummel,
• Charlène Brillard,
• Mustafa Kangül and
• Georg E. Fantner

Beilstein J. Nanotechnol. 2020, 11, 1272–1279, doi:10.3762/bjnano.11.111

• the optics is very impractical, as it requires the user to vent the chamber. Using self-sensing readout addresses these concerns [5][10][17] and also significantly improves the usability of the correlative instrument for users outside of the AFM community. The reported AFM uses silicon cantilever

• surfaces in contact and off-resonance imaging modes, demonstrating the feasibility of the integration through a series of three experiments. Correlative AFM and HIM imaging is demonstrated in Figure 2 by imaging silicon nanopillars [30]. The HIM offers a large field of view, which allows for the cantilever

• fabrication capabilities of the HIM [33] and studying these local defects created at the micro- and nanoscale can provide valuable information towards understanding these limitations. For example, a focused helium ion beam can locally destroy the crystalline structure of silicon and lead to the growth of

3D superconducting hollow nanowires with tailored diameters grown by focused He⁺ beam direct writing

• Rosa Córdoba,
• Alfonso Ibarra,
• Dominique Mailly,
• Isabel Guillamón,
• Hermann Suderow and
• José María De Teresa

Beilstein J. Nanotechnol. 2020, 11, 1198–1206, doi:10.3762/bjnano.11.104

• -patterned Ti pads (150 nm in thickness) to prevent charge effects on the insulator layer (250 nm thick of SiO2) thermally grown on a silicon wafer [23]. These chips were fabricated following a routine recipe for UV optical lithography using a lift-off method. For the electron tomography and (HR)STEM

Revealing the local crystallinity of single silicon core–shell nanowires using tip-enhanced Raman spectroscopy

• Marius van den Berg,
• Ardeshir Moeinian,
• Arne Kobald,
• Yu-Ting Chen,
• Anke Horneber,
• Steffen Strehle,
• Alfred J. Meixner and
• Dai Zhang

Beilstein J. Nanotechnol. 2020, 11, 1147–1156, doi:10.3762/bjnano.11.99

• , Germany 10.3762/bjnano.11.99 Abstract Tip-enhanced Raman spectroscopy is combined with polarization angle-resolved spectroscopy to investigate the nanometer-scale structural properties of core–shell silicon nanowires (crystalline Si core and amorphous Si shell), which were synthesized by platinum

• -catalyzed vapor–liquid–solid growth and silicon overcoating by thermal chemical vapor deposition. Local changes in the fraction of crystallinity in these silicon nanowires are characterized at an optical resolution of about 300 nm. Furthermore, we are able to resolve the variations in the intensity ratios

• local structural properties of Si nanomaterials at the sub-10 nanometer scale using tip-enhanced Raman techniques. Keywords: core–shell nanowires; local crystallinity; polarization angle-resolved spectroscopy; silicon; tip-enhanced Raman spectroscopy; Introduction The properties of silicon are long

Applications of superparamagnetic iron oxide nanoparticles in drug and therapeutic delivery, and biotechnological advancements

• Maria Suciu,
• Corina M. Ionescu,
• Alexandra Ciorita,
• Septimiu C. Tripon,
• Dragos Nica,
• Hani Al-Salami and
• Lucian Barbu-Tudoran

Beilstein J. Nanotechnol. 2020, 11, 1092–1109, doi:10.3762/bjnano.11.94

• tumor sites making them good candidates for MRI imaging. 300 nm SPIONs coated with dextran were cleared from the main accumulation sites (liver, spleen, lungs) after 72 h, but the same SPIONs covered with silicon were still accumulating after 72 h. Similar results were obtained using 10 nm

A few-layer graphene/chlorin e6 hybrid nanomaterial and its application in photodynamic therapy against Candida albicans

• Selene Acosta,
• Carlos Moreno-Aguilar,
• Dania Hernández-Sánchez,
• Beatriz Morales-Cruzado,
• Erick Sarmiento-Gomez,
• Carla Bittencourt,
• Luis Octavio Sánchez-Vargas and
• Mildred Quintana

Beilstein J. Nanotechnol. 2020, 11, 1054–1061, doi:10.3762/bjnano.11.90

• power impinging on the sample was between 5 and 10 mW, the spatial resolution was 2 cm−1 and the spot size was ≈1 µm2. The samples were recorded from drops of the dispersions deposited on clean silicon wafers and left to dry under vacuum. The chemical composition of the samples was investigated using X

Excitonic and electronic transitions in Me–Sb₂Se₃ structures

• Nicolae N. Syrbu,
• Victor V. Zalamai,
• Ivan G. Stamov and
• Stepan I. Beril

Beilstein J. Nanotechnol. 2020, 11, 1045–1053, doi:10.3762/bjnano.11.89

• energy radiation [1][2] which is corroborated by a 6.5% rapid increase in solar cell efficiency when Sb2Se3 is present [3][4][5]. Interestingly, this high absorption coefficient is 103 times higher than the absorption in silicon [5][6][7] and encompasses a wide portion of the spectrum ranging from 1.0 eV

Highly sensitive detection of estradiol by a SERS sensor based on TiO₂ covered with gold nanoparticles

• Andrea Brognara,
• Ili F. Mohamad Ali Nasri,
• Beatrice R. Bricchi,
• Andrea Li Bassi,
• Caroline Gauchotte-Lindsay,
• Matteo Ghidelli and
• Nathalie Lidgi-Guigui

Beilstein J. Nanotechnol. 2020, 11, 1026–1035, doi:10.3762/bjnano.11.87

• for an acquisition time of 300 s. This trade-off between power and duration of the acquisition has been chosen after a series of tests in which the power was gradually decreased from 10 mW to 100 μW. The typical peak of silicon at 521 cm−1 was used as an internal reference to normalize the intensities

Gas-sensing features of nanostructured tellurium thin films

• Dumitru Tsiulyanu

Beilstein J. Nanotechnol. 2020, 11, 1010–1018, doi:10.3762/bjnano.11.85

• present work is related to investigations of the interaction between nanostructured Te films and toxic gases. According to the literature, such investigations firstly have been provided utilizing the nanocrystalline Te films grown onto Pyrex glass, alumina (Al2O3), oxidized silicon or sapphire substrates

• the high-vacuum deposition technique in order to grow Te nanotubes on silicon substrates containing previously deposited nanoparticles of silver or gold [22]. In both cases, 50 nm diameter Te nanotubes were obtained. When exposed to low concentrations of different toxic gases, including NO2, the Te

Extracting viscoelastic material parameters using an atomic force microscope and static force spectroscopy

• Cameron H. Parvini,
• M. A. S. R. Saadi and
• Santiago D. Solares

Beilstein J. Nanotechnol. 2020, 11, 922–937, doi:10.3762/bjnano.11.77

• velocities were selected in a logarithmic distribution: 10, 100, and 1000 nm/s. The probe utilized was an OLYMPUS AC 240TS-R3, featuring a tip radius of roughly 10 nm. Before measurement, the tip was calibrated using the thermal noise method [29] in which a hard silicon sample was used after sonicating using

Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films

• Vadim Morari,
• Aida Pantazi,
• Nicolai Curmei,
• Vitalie Postolache,
• Emil V. Rusu,
• Marius Enachescu,
• Ion M. Tiginyanu and
• Veaceslav V. Ursaki

Beilstein J. Nanotechnol. 2020, 11, 899–910, doi:10.3762/bjnano.11.75

• 500 °C. Silicon substrates were used for films annealed at temperatures higher than 500 °C to avoid softening of the glass substrate. Table 3 summarizes the PL band position at 20 K and at room temperature in ZnMgO films prepared by sol–gel spin coating. A model for the band tail distribution and the

• tapping mode with a SOLVER Next (NT-MDT) instrument equipped with cone-shaped tips from monocrystalline silicon (tip radius ≈ 10 nm) on cantilevers with a stiffness of about 17 N/m. The root mean square (RMS) roughness parameters were calculated from the acquired topographic images using image processing

Integrated photonics multi-waveguide devices for optical trapping and Raman spectroscopy: design, fabrication and performance demonstration

• Gyllion B. Loozen,
• Arnica Karuna,
• Mohammad M. R. Fanood,
• Erik Schreuder and
• Jacob Caro

Beilstein J. Nanotechnol. 2020, 11, 829–842, doi:10.3762/bjnano.11.68

• index of silicon nitride, silicon oxide and water is chosen as nSi3N4 = 2.00, nSiO2 = 1.45, and nH20 = 1.33, respectively. To obtain the characteristics of the emitted beams, we follow the simulation approach of our previous work [6]. Figure 2a shows the longitudinal profiles of the energy density U of

• section. In Figure 5, we show the main fabrication steps, which are performed on a batch of 100 mm silicon wafers. The overall design comprises 30 chips of size 11 mm × 11 mm. 28 chips each have a single trapping/Raman device, with up to 32 excitation and up to 10 detection waveguides. The remaining chips

• waveguides is completely decoupled from the silicon substrate. Then, a 100 nm thick layer of Si3N4 is deposited using low pressure chemical vapor deposition (LPCVD, Figure 5b). This layer is patterned using optical lithography and reactive ion etching (RIE) in a fluorine-based plasma, which is followed by

Nickel nanoparticles supported on a covalent triazine framework as electrocatalyst for oxygen evolution reaction and oxygen reduction reactions

• Secil Öztürk,
• Yu-Xuan Xiao,
• Dennis Dietrich,
• Beatriz Giesen,
• Juri Barthel,
• Jie Ying,
• Xiao-Yu Yang and
• Christoph Janiak

Beilstein J. Nanotechnol. 2020, 11, 770–781, doi:10.3762/bjnano.11.62

• (PXRD) patterns were obtained at ambient temperature on a Bruker D2 Phaser powder diffractometer with a flat rotating silicon, low-background sample holder, at 30 kV, 10 mA for Cu Kα radiation (λ = 1.5418 Å). The diffractograms were analyzed with Match 3.11 software. All samples were measured between 5

• electron microscope with a LaB6 cathode at 5–20 keV and a Bruker Xflash 410 silicon drift detector for energy-dispersive X-ray spectrometric (EDX) elemental composition analysis. M/CTF-IL suspension samples for transmission electron microscopy (TEM) were dripped on a carbon-coated copper grid and excess IL

Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface

• Stefania Castelletto,
• Faraz A. Inam,
• Shin-ichiro Sato and
• Alberto Boretti

Beilstein J. Nanotechnol. 2020, 11, 740–769, doi:10.3762/bjnano.11.61

• , quantum computation, and quantum sensing. Their integration in photonic structures such as photonic crystals, microdisks, microring resonators, and nanopillars is essential for their deployment in quantum technologies. While there are currently only two material platforms (diamond and silicon carbide

• spin–photon interfaces for remote spin–photon entanglement with available nuclear spins as ancilla qubits for quantum memory [11][12]. These include the nitrogen-vacancy (NV) center in diamond [13], the silicon-vacancy center in diamond [14][15][16], the germanium-vacancy center in diamond [17], the

• divacancy (DV) in silicon carbide (SiC) [18][19][20], the silicon monovacancy in SiC [21][22][23], the carbon antisite vacancy pair in SiC [24][25], the silicon vacancy and nitrogen (N) atom on an adjacent carbon site in SiC [26][27][28], and rare-earth impurities in complex oxides [29]. While the NV center

Quantitative determination of the interaction potential between two surfaces using frequency-modulated atomic force microscopy

• Nicholas Chan,
• Carrie Lin,
• Tevis Jacobs,
• Robert W. Carpick and
• Philip Egberts

Beilstein J. Nanotechnol. 2020, 11, 729–739, doi:10.3762/bjnano.11.60

• then compared to experimental results. The method is demonstrated here using a silicon AFM probe with its native oxide and a diamond sample. Assuming the 6-12 Lennard-Jones potential form, best-fit values for the work of adhesion (Wadh) and range of adhesion (z0) parameters were determined to be 80

• geometries. In this manuscript, frequency modulation (FM) AFM was used to determine the interaction forces between two irregularly shaped solids: the apex of a silicon AFM probe with its native oxide and a slightly roughened, nominally flat single-crystal diamond surface. This substrate was chosen due to its

• contributes to the long-range interaction between tip and sample. Best-fit potential parameters were determined for the silicon oxide–diamond system and the spatial variance of these parameters was examined over different locations across the diamond sample. Experimental Frequency modulation atomic force