Periodic Co/Nb pseudo spin valve for cryogenic memory

• Nikolay Klenov,
• Yury Khaydukov,
• Sergey Bakurskiy,
• Roman Morari,
• Igor Soloviev,
• Vladimir Boian,
• Thomas Keller,
• Mikhail Kupriyanov,
• Anatoli Sidorenko and
• Bernhard Keimer

Beilstein J. Nanotechnol. 2019, 10, 833–839, doi:10.3762/bjnano.10.83

• sapphire (Al2O3) substrate. Before the deposition the substrates were etched by an argon ion beam inside the chamber. The targets Nb(99.99%) and Co(99.99%) were presputtered to remove metallic oxides and contamination absorbed on the surfaces. Additionally, immediately before deposition of the next layer

On the transformation of “zincone”-like into porous ZnO thin films from sub-saturated plasma enhanced atomic layer deposition

• Alberto Perrotta,
• Julian Pilz,
• Stefan Pachmajer,
• Antonella Milella and
• Anna Maria Coclite

Beilstein J. Nanotechnol. 2019, 10, 746–759, doi:10.3762/bjnano.10.74

• charging was compensated using a dual beam charge neutralization, with a flux of low-energy electrons (ca. 1 eV) combined with positive Ar ions of very low energy (10 eV). Samples were sputter cleaned for 1 min with an Ar ion beam of 1 kV, 1 µA (raster size: 2 × 2 cm2). The acquired spectra were processed

Biomimetic synthesis of Ag-coated glasswing butterfly arrays as ultra-sensitive SERS substrates for efficient trace detection of pesticides

• Guochao Shi,
• Mingli Wang,
• Yanying Zhu,
• Yuhong Wang,
• Xiaoya Yan,
• Xin Sun,
• Haijun Xu and
• Wanli Ma

Beilstein J. Nanotechnol. 2019, 10, 578–588, doi:10.3762/bjnano.10.59

• invaluable in research and industrial application. Researchers have paid attention to physical methods (“top-down” techniques) such as focused ion beam lithography (FIB) [14][15], electron beam lithography (EBL) [16][17] or soft nanoimprint nanolithography (NIL) [18], which can produce controllable shapes

Nanocomposite–parylene C thin films with high dielectric constant and low losses for future organic electronic devices

• Marwa Mokni,
• Gianluigi Maggioni,
• Abdelkader Kahouli,
• Sara M. Carturan,
• Walter Raniero and
• Alain Sylvestre

Beilstein J. Nanotechnol. 2019, 10, 428–441, doi:10.3762/bjnano.10.42

• quantified by Rutherford backscattering spectrometry (RBS). Ion beam analyses of the deposited films were performed using a 2.0 MeV 4He+ beam at the Van de Graaf accelerator at the Laboratori Nazionali di Legnaro, with a scattering angle of 160°. We have to highlight that the Cl content measured with RBS (in

• atoms·cm−2) is directly converted into the amount of parylene (in monomeric units·cm−2), since each monomeric unit contains one Cl atom. RBS analysis was performed on coatings deposited on silicon substrates. Taking into account the desorption of Cl-containing species from the film occurring during ion

• beam analysis [72], RBS spectra were acquired by irradiating different spots of the pristine samples and collecting only 0.2 µC of charge on each spot until a total collected charge of a few microcoulombs was reached. A stylus profilometer (Tencor Instruments, model Alpha-Step 200) was used to measure

Interaction of Te and Se interlayers with Ag or Au nanofilms in sandwich structures

• Arkadiusz Ciesielski,
• Lukasz Skowronski,
• Marek Trzcinski,
• Ewa Górecka,
• Wojciech Pacuski and
• Tomasz Szoplik

Beilstein J. Nanotechnol. 2019, 10, 238–246, doi:10.3762/bjnano.10.22

• interlaced by Ar-ion etching in order to study the chemical composition of subsequent sublayers. The energy of Ar ions was 4 keV and the incidence angle was 69°. An ion beam scanned an area of 4 × 4 mm in order to etch the analyzed surface homogeneously. The concentration of elements was estimated by fitting

Sputtering of silicon nanopowders by an argon cluster ion beam

• Xiaomei Zeng,
• Vasiliy Pelenovich,
• Zhenguo Wang,
• Wenbin Zuo,
• Sergey Belykh,
• Alexander Tolstogouzov,
• Dejun Fu and
• Xiangheng Xiao

Beilstein J. Nanotechnol. 2019, 10, 135–143, doi:10.3762/bjnano.10.13

• Xiaomei Zeng Vasiliy Pelenovich Zhenguo Wang Wenbin Zuo Sergey Belykh Alexander Tolstogouzov Dejun Fu Xiangheng Xiao Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Hubei Nuclear Solid Physics Key Laboratory and Center for Ion Beam

• (CeFITec), Dept. de Física da Faculdade de Ciências e Tecnologia (FCT), Universidade Nova de Lisboa, Caparica, 2829-516, Portugal 10.3762/bjnano.10.13 Abstract In this work an Ar+ cluster ion beam with energy in the range of 10–70 keV and dose of 7.2 × 1014–2.3 × 1016 cluster/cm2 was used to irradiate

• pressed Si nanopowder targets consisting of particles with a mean diameter of 60 nm. The influence of the target density and the cluster ion beam parameters (energy and dose) on the sputtering depth and sputtering yield was studied. The sputtering yield was found to decrease with increasing dose and

A new bioinspired method for pressure and flow sensing based on the underwater air-retaining surface of the backswimmer Notonecta

• Matthias Mail,
• Adrian Klein,
• Horst Bleckmann,
• Anke Schmitz,
• Torsten Scherer,
• Peter T. Rühr,
• Goran Lovric,
• Robin Fröhlingsdorf,
• Stanislav N. Gorb and
• Wilhelm Barthlott

Beilstein J. Nanotechnol. 2018, 9, 3039–3047, doi:10.3762/bjnano.9.282

• joint membrane and a socket septum (Figure 3). The dendrite is enveloped in a dendritic sheath whose base shows a ciliary constriction and runs into the soma region of the sensillum (Figure 3). Tomography images using focused ion beam (FIB) techniques revealed that the two types of setae differ in

• the microstructures. Furthermore, the microstructures of the setal bases were analyzed using focused ion beam techniques (FIB, Zeiss Auriga 60). In this case, fresh hemelytra were covered with a thin gold layer using a sputter coater (Sputter Coater 108auto, Cressington). Using the FIB system, a

Size limits of magnetic-domain engineering in continuous in-plane exchange-bias prototype films

• Alexander Gaul,
• Daniel Emmrich,
• Timo Ueltzhöffer,
• Henning Huckfeldt,
• Hatice Doğanay,
• Johanna Hackl,
• Muhammad Imtiaz Khan,
• Daniel M. Gottlob,
• Gregor Hartmann,
• André Beyer,
• Dennis Holzinger,
• Slavomír Nemšák,
• Claus M. Schneider,
• Armin Gölzhäuser,
• Günter Reiss and
• Arno Ehresmann

Beilstein J. Nanotechnol. 2018, 9, 2968–2979, doi:10.3762/bjnano.9.276

• present there is no method available where the lateral resolution is considerably higher as the expected minimum pattern sizes. Here we suggest mask-less patterning by the highly focused beam of a helium ion microscope (HIM), to lower the limits of ion beam induced magnetic pattering in continuous layer

• energy transfer causing defects in the atomic lattice structure [35]. These defects do not change the orientation of the local unidirectional anisotropy, but rather influence the local magnetic properties, as already explained in [35][40]. The area modified by an ion beam is defined by the beam diameter

• the AF. Therefore, an ion beam of 8 nm diameter achieves a patterning width of less than 40 nm at the EB interface well below the expected material specific size limit for stable domains. This size limit is defined by the DW width between in-plane engineered EB domains and depends on the relative

Site-controlled formation of single Si nanocrystals in a buried SiO₂ matrix using ion beam mixing

• Xiaomo Xu,
• Thomas Prüfer,
• Daniel Wolf,
• Hans-Jürgen Engelmann,
• Lothar Bischoff,
• René Hübner,
• Karl-Heinz Heinig,
• Wolfhard Möller,
• Stefan Facsko,
• Johannes von Borany and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2018, 9, 2883–2892, doi:10.3762/bjnano.9.267

• + or Ne+ ion beam mixing of Si into a buried SiO2 layer followed by thermally activated phase separation. Binary collision approximation and kinetic Monte Carlo methods are conducted to gain atomistic insight into the influence of relevant experimental parameters on the Si NC formation process. Energy

• single Si NCs. Line irradiation with a fluence of 3000 Ne+/nm2 and a line width of 4 nm leads to the formation of a chain of Si NCs, and a single NC with 2.2 nm diameter is subsequently isolated and visualized in a few nanometer thin lamella prepared by a focused ion beam (FIB). The Si NC is centered

• between the SiO2 layers and perpendicular to the incident Ne+ beam. Keywords: helium ion microscopy; ion beam mixing; Monte Carlo simulations; phase separation; single electron transistor; Introduction Silicon has been the main material in the semiconductor industry for almost all use cases with the

Charged particle single nanometre manufacturing

• Philip D. Prewett,
• Cornelis W. Hagen,
• Claudia Lenk,
• Steve Lenk,
• Marcus Kaestner,
• Tzvetan Ivanov,
• Ahmad Ahmad,
• Ivo W. Rangelow,
• Xiaoqing Shi,
• Stuart A. Boden,
• Alex P. G. Robinson,
• Dongxu Yang,
• Sangeetha Hari,
• Marijke Scotuzzi and
• Ejaz Huq

Beilstein J. Nanotechnol. 2018, 9, 2855–2882, doi:10.3762/bjnano.9.266

• ”. Scanning helium ion beam lithography has the advantages of virtually zero proximity effect, nanoscale patterning capability and high sensitivity in combination with a novel fullerene resist based on the sub-nanometre C60 molecule. The shot noise-limited minimum linewidth achieved to date is 6 nm. The

• generate the lithographic pattern. The first approach, termed scanned beam technology, comprises electron and ion beam lithographies and electron/ion beam induced deposition. It has its origins in the scanning electron microscope and, more recently, the scanning ion microscope. Scanning probe lithography

• multibeam electron writers [13] are emerging as novel tools of the future. In addition to resist-based lithography, these are capable of writing patterns by electron beam induced deposition [14]. Focused ion beam tools are also becoming increasingly important. The latter include multi-beam ion beam systems

Controlling surface morphology and sensitivity of granular and porous silver films for surface-enhanced Raman scattering, SERS

• Sherif Okeil and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2018, 9, 2813–2831, doi:10.3762/bjnano.9.263

• -30 FEG using an electron beam at 25 kV. Cross-sectional transmission electron microscopy (TEM) images of the silver films were recorded using a Tecnai G2 F20 microscope operating at 200 kV after the use of focused-ion beam (FIB) for sample preparation [74]. X-ray diffraction (XRD) was performed on a

Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Eleonora M. Danilina and
• Sergei N. Chebotarev

Beilstein J. Nanotechnol. 2018, 9, 2794–2801, doi:10.3762/bjnano.9.261

• their isovalent doping with bismuth on the photoluminescence properties of InAs/GaAs heterostructures. The experimental samples were grown by ion-beam deposition. We showed that using three vertically stacked layers of InAs quantum dots separated by thin GaAs barrier layers was accompanied by a red

• . It is shown that isovalent doping of GaAs potential barriers by bismuth was accompanied by a red-shift of the photoluminescence peak of InAs quantum dots of 121 meV. Keywords: infrared photodetectors; ion-beam deposition; nanoheterostructures; photoluminescence; quantum dot; semiconductors

• heterostructures [17][18][20][32][33]. In this regard, a study of the influence of Bi on the optical properties of InAs/GaAs heterostructures is an actual requirement. In this work, ion-beam deposition (IBD) is used to grow the samples. IBD has significant advantages over many methods of growth from the gas phase

Low cost tips for tip-enhanced Raman spectroscopy fabricated by two-step electrochemical etching of 125 µm diameter gold wires

• Antonino Foti,
• Francesco Barreca,
• Enza Fazio,
• Cristiano D’Andrea,
• Paolo Matteini,
• Onofrio Maria Maragò and
• Pietro Giuseppe Gucciardi

Beilstein J. Nanotechnol. 2018, 9, 2718–2729, doi:10.3762/bjnano.9.254

• deposition (EBID) and focused ion beam (FIB) milling [41][42][43] (see [30][44] for reviews). Fabrication methods capable of guaranteeing high reproducibility, cost-effectiveness and scalability to industrial production are, however, still not available at present. Metal vapor deposition on AFM tips is

Optimization of Mo/Cr bilayer back contacts for thin-film solar cells

• Nima Khoshsirat,
• Fawad Ali,
• Vincent Tiing Tiong,
• Mojtaba Amjadipour,
• Hongxia Wang,
• Mahnaz Shafiei and
• Nunzio Motta

Beilstein J. Nanotechnol. 2018, 9, 2700–2707, doi:10.3762/bjnano.9.252

• . Depth profiling was conducted on a 1 × 1 mm2 area with a Ar+ ion beam energy of 10 keV and large cluster size (n = 2000). Results and Discussion Adhesion The first characterization step was the adhesion test performed on Mo layers after deposition on uncoated and Cr-coated glass substrates. All samples

Friction reduction through biologically inspired scale-like laser surface textures

• Johannes Schneider,
• Vergil Djamiykov and
• Christian Greiner

Beilstein J. Nanotechnol. 2018, 9, 2561–2572, doi:10.3762/bjnano.9.238

• pearlitic steel with round dimples, no microstructural changes within the 100Cr6 samples in the heat affected zone were expected [15]. Figure S2, Supporting Information File 1 shows a scanning electron microscopy (SEM) image of a cross-section through a laser-textured sample prepared by focused ion beam

• microscopy of the laser surface textured samples was performed with a FEI Helios 650 (Hillsborough, USA) scanning electron/focused ion beam microscope used in electron beam mode only. Tribological characterization The tribological pin-on-disc tests for the experiments against different counter body materials

• . Supporting Information Figure S1: Optical micrograph of a scale-like surface texture after 1000 m of dry sliding against sapphire. Figure S2: Scanning electron microscopy image of a focused ion beam cross-section of a laser-textured sample. Figure S3: Optical micrograph of a PEEK disc after a dry sliding

High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb)_1−x(MnSb)_x alloy

• Leonid N. Oveshnikov,
• Elena I. Nekhaeva,
• Alexey V. Kochura,
• Alexander B. Davydov,
• Mikhail A. Shakhov,
• Sergey F. Marenkin,
• Oleg A. Novodvorskii,
• Alexander P. Kuzmenko,
• Alexander L. Vasiliev,
• Boris A. Aronzon and
• Erkki Lahderanta

Beilstein J. Nanotechnol. 2018, 9, 2457–2465, doi:10.3762/bjnano.9.230

• samples demonstrated linear current–voltage characteristics down to sub-helium temperatures while sustaining high values of conductivity. The cross-section specimens for S/TEM studies were prepared by focus ion beam (FIB) milling in a Helios (FEI, US) SEM/FIB dual-beam system equipped with C and Pt gas

Thickness-dependent photoelectrochemical properties of a semitransparent Co₃O₄ photocathode

• Malkeshkumar Patel and
• Joondong Kim

Beilstein J. Nanotechnol. 2018, 9, 2432–2442, doi:10.3762/bjnano.9.228

• focused ion beam system (FIB, FEI, Quanta 3D FEG). The elemental compositions in the cross sections of the Co3O4 layers in the working electrode were determined as line profiles by an energy dispersive spectroscopy (EDS) attachment to the FETEM. Thickness and average surface roughness of the deposited

Hydrothermal-derived carbon as a stabilizing matrix for improved cycling performance of silicon-based anodes for lithium-ion full cells

• Mirco Ruttert,
• Florian Holtstiege,
• Jessica Hüsker,
• Markus Börner,
• Martin Winter and
• Tobias Placke

Beilstein J. Nanotechnol. 2018, 9, 2381–2395, doi:10.3762/bjnano.9.223

• -sections were prepared by a focused ion beam (FIB) milling process using gallium ions extracted from a high brightness liquid metal ion source. Nitrogen adsorption experiments were performed on a 3Flex Physisorption device (Micromeritics GmbH) at the temperature of liquid nitrogen (−196 °C). Before the

Directional light beams by design from electrically driven elliptical slit antennas

• Shuiyan Cao,
• Eric Le Moal,
• Quanbo Jiang,
• Aurélien Drezet,
• Serge Huant,
• Jean-Paul Hugonin,
• Gérald Dujardin and
• Elizabeth Boer-Duchemin

Beilstein J. Nanotechnol. 2018, 9, 2361–2371, doi:10.3762/bjnano.9.221

• milled in the gold film using a focused ion beam (FIB) at the NanoFab facility (Institut Néel, Grenoble, France). A scanning electron microscopy image of an elliptical slit is shown in Supporting Information File 1. Schematics of the experiment. A single (a) circular or (b) elliptical slit etched in a

Two-dimensional photonic crystals increasing vertical light emission from Si nanocrystal-rich thin layers

• Lukáš Ondič,
• Marian Varga,
• Ivan Pelant,
• Alexander Kromka,
• Karel Hruška and
• Robert G. Elliman

Beilstein J. Nanotechnol. 2018, 9, 2287–2296, doi:10.3762/bjnano.9.213

• with etching [14] or focused ion beam milling [15] are used to prepare photonic structures with well-defined dimensions on small areas. These approaches are therefore suitable for laboratory testings but not for practice. This issue was recently solved by developing large-scale production techniques

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO₂/Si₃N₄-coating

• Dirk König,
• Daniel Hiller,
• Noël Wilck,
• Birger Berghoff,
• Merlin Müller,
• Sangeeta Thakur,
• Giovanni Di Santo,
• Luca Petaccia,
• Joachim Mayer,
• Sean Smith and
• Joachim Knoch

Beilstein J. Nanotechnol. 2018, 9, 2255–2264, doi:10.3762/bjnano.9.210

• SiO2-layer to facilitate the preparation of cross sections by the focused ion beam technique using a FEI Strata FIB 205 workstation. Some samples were further thinned by means of a Fischione NanoMill. The TEM analysis of the cross sections was performed on a FEI Tecnai F20 TEM operated at 200 kV at the

High-throughput synthesis of modified Fresnel zone plate arrays via ion beam lithography

• Kahraman Keskinbora,
• Umut Tunca Sanli,
• Margarita Baluktsian,
• Corinne Grévent,
• Markus Weigand and
• Gisela Schütz

Beilstein J. Nanotechnol. 2018, 9, 2049–2056, doi:10.3762/bjnano.9.194

• -resolution imaging and lithography at short wavelengths. Their fabrication requires nano-machining capabilities with exceptional precision and strict tolerances such as those enabled by modern lithography methods. In particular, ion beam lithography (IBL) is a noteworthy method thanks to its robust direct

• ) radiation; focused ion beam (FIB); Fresnel zone plate; ion beam lithography (IBL); nanopatterning; soft X-rays; Introduction Requirements for focusing elements that work at extreme ultraviolet (EUV) and soft X-ray (SXR) energies are very different from those of the more familiar ultraviolet, visible or

• is direct-write ion beam lithography (IBL) and machining [32][33][34]. A well-known advantage of IBL is the ease of rapid prototyping of small-scale microfluidic, optical or electronic nanodevices. IBL has recently been applied for fabricating high-resolution functional FZPs [28][35][36] and for the

Defect formation in multiwalled carbon nanotubes under low-energy He and Ne ion irradiation

• Santhana Eswara,
• Jean-Nicolas Audinot,
• Brahime El Adib,
• Maël Guennou,
• Tom Wirtz and
• Patrick Philipp

Beilstein J. Nanotechnol. 2018, 9, 1951–1963, doi:10.3762/bjnano.9.186

• -resolution imaging tool [32][33]. A He+ or Ne+ ion beam can be used to irradiated the samples with an impact energy in the range of 5 to 30 keV, either for imaging or nano-machining [34][35], or for doing both simultaneously [33]. For instance, the HIM has already been used for the imaging of graphene flakes

• -beam etching and takes changes in ion current during long-time irradiation into account. The scan mode with spot overlap was used for ion beam positioning, leading to a homogeneous irradiation of the sample. The experimental conditions are given in Table 2. Raman spectra Raman scattering measurements

• total irradiation fluences of the MWCNT samples ranged from 1014 to 1018 ions/cm2. Beam position and primary ion fluence were controlled by the Fibics Nanopatterning and Visualisation Engine (NPVE) (http://www.fibics.com/). The FIBICS nano-patterning software allows for high-performance milling and ion

Know your full potential: Quantitative Kelvin probe force microscopy on nanoscale electrical devices

• Amelie Axt,
• Ilka M. Hermes,
• Victor W. Bergmann,
• Niklas Tausendpfund and
• Stefan A. L. Weber

Beilstein J. Nanotechnol. 2018, 9, 1809–1819, doi:10.3762/bjnano.9.172

• stronger lateral averaging of the AM-KPFM in lift mode and the presence of a stray electric field. Such a field could originate from gallium ions deposited into the glass substrate during the focused ion beam polishing of the cross section. Our general recommendation for quantitative device measurements is

• compact MAPI capping layer, the hole transport material spiro-OMETAD and a gold electrode. Prior to the measurement the cross section of the solar cell was polished with a focused ion beam (FIB) to minimize topographic crosstalk. The CPD line profiles in a) were extracted from double side band frequency

Magnetic properties of Fe₃O₄ antidot arrays synthesized by AFIR: atomic layer deposition, focused ion beam and thermal reduction

• Juan L. Palma,
• Alejandro Pereira,
• Raquel Álvaro,
• José Miguel García-Martín and
• Juan Escrig

Beilstein J. Nanotechnol. 2018, 9, 1728–1734, doi:10.3762/bjnano.9.164

• .9.164 Abstract Magnetic films of magnetite (Fe3O4) with controlled defects, so-called antidot arrays, were synthesized by a new technique called AFIR. AFIR consists of the deposition of a thin film by atomic layer deposition, the generation of square and hexagonal arrays of holes using focused ion beam

• variable lattice parameters. Keywords: antidot arrays; atomic layer deposition; focused ion beam; magnetic properties; thermal reduction; Introduction Magnetic antidots, magnetic thin films with periodic arrays of holes, are currently an important topic for both the fundamental understanding of low

• [23] and colloidal [24] lithography, porous anodic alumina [25][26], block copolymer templates [27], nanochannel glass [28] and focused ion beam (FIB) patterning [29][30]. Recently, we have proposed the fabrication of disordered antidot arrays through the thermal reduction of thin films synthesized by