Search results

Search for "resistivity" in Full Text gives 241 result(s) in Beilstein Journal of Nanotechnology. Showing first 200.

High-stress study of bioinspired multifunctional PEDOT:PSS/nanoclay nanocomposites using AFM, SEM and numerical simulation

  • Alfredo J. Diaz,
  • Hanaul Noh,
  • Tobias Meier and
  • Santiago D. Solares

Beilstein J. Nanotechnol. 2017, 8, 2069–2082, doi:10.3762/bjnano.8.207

Graphical Abstract
  • expression σ = IL/VA (based on the definition of electrical resistivity and Ohm’s law), where I is the total current (sum of all pixels), L is the thickness of the film, V is the applied bias voltage and A is the scanned area (image size). The results are summarized in Figure 1b. Each point represents the
  • measured with AFM by the scratch method (a sharp knife was used to remove the coating and expose the substrate). The ITO coated PET (Sigma-Aldrich 639281) with surface resistivity of 100 Ω/sq and the glass slides (micro cover glasses, 22 × 30 mm × 0.13–0.16 mm thick, Ted Pella, Inc.) were cleaned similarly
PDF
Album
Supp Info
Full Research Paper
Published 04 Oct 2017

Identifying the nature of surface chemical modification for directed self-assembly of block copolymers

  • Laura Evangelio,
  • Federico Gramazio,
  • Matteo Lorenzoni,
  • Michaela Gorgoi,
  • Francisco Miguel Espinosa,
  • Ricardo García,
  • Francesc Pérez-Murano and
  • Jordi Fraxedas

Beilstein J. Nanotechnol. 2017, 8, 1972–1981, doi:10.3762/bjnano.8.198

Graphical Abstract
  • oxide between the brush layer and the SiO2/Si substrate. Experimental Preparation and chemical modification of brush layers The starting substrates were <100> silicon wafers (p-type silicon of 4–40 Ω·cm resistivity) with a native silicon oxide layer on top. A thin film of hydroxyl-terminated polystyrene
PDF
Album
Supp Info
Full Research Paper
Published 21 Sep 2017

Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications

  • Chin-Yi Tsai,
  • Jyong-Di Lai,
  • Shih-Wei Feng,
  • Chien-Jung Huang,
  • Chien-Hsun Chen,
  • Fann-Wei Yang,
  • Hsiang-Chen Wang and
  • Li-Wei Tu

Beilstein J. Nanotechnol. 2017, 8, 1939–1945, doi:10.3762/bjnano.8.194

Graphical Abstract
  • deposition (LPCVD) can act as good TCOs for thin film silicon solar cells [1][2][3][4][5][6][7][8][9][10]. This is mainly due to its high transparency over the visible and near-infrared (NIR) wavelength range, lower electrical resistivity (down to 1 × 10−3 Ω·cm), and the light-trapping capability due to its
PDF
Album
Full Research Paper
Published 15 Sep 2017

Enhancement of mechanical and electrical properties of continuous-fiber-reinforced epoxy composites with stacked graphene

  • Naum Naveh,
  • Olga Shepelev and
  • Samuel Kenig

Beilstein J. Nanotechnol. 2017, 8, 1909–1918, doi:10.3762/bjnano.8.191

Graphical Abstract
  • and at 120 °C for 2 h. Characterization The thermo-mechanical properties of the compositions were measured at 1 Hz according to ASTM D 4065 using a DMA-Dynamic Mechanical Analysis (Q800 TA Instruments). Flexural testing followed ASTM D790 (3 point bending) at 1.3 mm/min. Electrical resistivity, both
  • surface resistivity of the composite materials with epoxy/SG matrix systems dropped by 7–8 orders of magnitude, but the volume resistivity remained at the level of carbon fabrics/neat epoxy composite. Resistivities of the carbon/epoxy composite without SG are already lower than the lowest resistivities
  • achieved with Kevlar/epoxy/SG. Thus, the volume resistivity is not expected to decrease, yet the surface resistivities are reduced by the effect of SG in the matrix and reach lower values than their Kevlar/epoxy/SG counterparts, probably due to dispersion of some carbon fiber fraction in the resin during
PDF
Album
Supp Info
Full Research Paper
Published 12 Sep 2017

Evaluation of preparation methods for suspended nano-objects on substrates for dimensional measurements by atomic force microscopy

  • Petra Fiala,
  • Daniel Göhler,
  • Benno Wessely,
  • Michael Stintz,
  • Giovanni Mattia Lazzerini and
  • Andrew Yacoot

Beilstein J. Nanotechnol. 2017, 8, 1774–1785, doi:10.3762/bjnano.8.179

Graphical Abstract
  • and ten minutes and diluted with distilled and deionized water (ultrapure water with a specific electrical resistivity of 18.3 MΩ·cm) in the dependence of the known initial particle mass concentration and the given particle diameter (see Table 1) to reach KC-values (see Equation 2) between 2 and 10
PDF
Album
Full Research Paper
Published 28 Aug 2017

Near-infrared-responsive, superparamagnetic Au@Co nanochains

  • Varadee Vittur,
  • Arati G. Kolhatkar,
  • Shreya Shah,
  • Irene Rusakova,
  • Dmitri Litvinov and
  • T. Randall Lee

Beilstein J. Nanotechnol. 2017, 8, 1680–1687, doi:10.3762/bjnano.8.168

Graphical Abstract
  • ), nitric acid (EM Science) and hydrochloric acid (EM Science) were purchased from the indicated suppliers and used without purification. Water was purified to a resistivity of 18 MΩ·cm (Academic Milli-Q Water System; Millipore Corporation). All glassware and equipment was cleaned using an aqua regia
PDF
Album
Full Research Paper
Published 14 Aug 2017

Process-specific mechanisms of vertically oriented graphene growth in plasmas

  • Subrata Ghosh,
  • Shyamal R. Polaki,
  • Niranjan Kumar,
  • Sankarakumar Amirthapandian,
  • Mohamed Kamruddin and
  • Kostya (Ken) Ostrikov

Beilstein J. Nanotechnol. 2017, 8, 1658–1670, doi:10.3762/bjnano.8.166

Graphical Abstract
  • and disordered carbon, and mainly the sp3 content play key roles in determining the resistivity [9]. Here, the high resistivity of the sample grown at 600 °C can be explained by grain boundary and edge defects of NG, which diminish electron mobility. On the other hand, higher growth temperatures
  • improved the crystallinity and resulted in lower resistivity. Conclusion In summary, plasma-enhanced chemical vapor deposition (PECVD) was employed to conduct a series of controlled growth experiments. The experimental results specify the effects of the growth temperature, plasma power and distance from
PDF
Album
Full Research Paper
Published 10 Aug 2017

Group-13 and group-15 doping of germanane

  • Nicholas D. Cultrara,
  • Maxx Q. Arguilla,
  • Shishi Jiang,
  • Chuanchuan Sun,
  • Michael R. Scudder,
  • R. Dominic Ross and
  • Joshua E. Goldberger

Beilstein J. Nanotechnol. 2017, 8, 1642–1648, doi:10.3762/bjnano.8.164

Graphical Abstract
  • need of extrinsic dopants to access devices with lower resistivity. In previous studies, the resistivity of germanane was reduced through the incorporation of phosphorus only when activated in the presence of atmospheric water [29]. Recently [30], undoped germanane field-effect transistors were
PDF
Album
Full Research Paper
Published 09 Aug 2017

Luminescent supramolecular hydrogels from a tripeptide and nitrogen-doped carbon nanodots

  • Maria C. Cringoli,
  • Slavko Kralj,
  • Marina Kurbasic,
  • Massimo Urban and
  • Silvia Marchesan

Beilstein J. Nanotechnol. 2017, 8, 1553–1562, doi:10.3762/bjnano.8.157

Graphical Abstract
  • chemicals were purchased from Sigma-Aldrich. All solvents were from Merck. High purity Milli-Q water (MQ water) with a resistivity greater than 18 MΩ·cm was obtained from an in-line Millipore RiOs/Origin system. Synthesis and characterization The tripeptide DLeu-Phe-Phe was synthesized according standard
PDF
Album
Supp Info
Full Research Paper
Published 01 Aug 2017

Light-induced magnetoresistance in solution-processed planar hybrid devices measured under ambient conditions

  • Sreetama Banerjee,
  • Daniel Bülz,
  • Danny Reuter,
  • Karla Hiller,
  • Dietrich R. T. Zahn and
  • Georgeta Salvan

Beilstein J. Nanotechnol. 2017, 8, 1502–1507, doi:10.3762/bjnano.8.150

Graphical Abstract
  • ) designed and developed in this work. Negative magnetoresistance (positive magnetoconductance) was observed for both types of devices similar to the observations in [9]. Magnetoresistance is defined as the change in resistivity of a material/device due to application of an external magnetic field
PDF
Album
Supp Info
Letter
Published 21 Jul 2017

Fully scalable one-pot method for the production of phosphonic graphene derivatives

  • Kamila Żelechowska,
  • Marta Prześniak-Welenc,
  • Marcin Łapiński,
  • Izabela Kondratowicz and
  • Tadeusz Miruszewski

Beilstein J. Nanotechnol. 2017, 8, 1094–1103, doi:10.3762/bjnano.8.111

Graphical Abstract
  • the usage of GO-P as flame retardant, similarly as was reported by Kim et al. [4]. Finally, a measurement of the electrical properties of GO-P materials was carried out. Before reduction, the GO layers exhibited insulating behavior, with a resistivity higher than 106 Ω·cm. The temperature-dependent
PDF
Album
Supp Info
Full Research Paper
Published 18 May 2017

The integration of graphene into microelectronic devices

  • Guenther Ruhl,
  • Sebastian Wittmann,
  • Matthias Koenig and
  • Daniel Neumaier

Beilstein J. Nanotechnol. 2017, 8, 1056–1064, doi:10.3762/bjnano.8.107

Graphical Abstract
  • enormous importance, especially for short-channel devices. Numerous studies have been published during the last few years on the understanding and improvement of graphene–metal contacts, reporting contact resistivity values in a wide range from several ohm-micrometers to several hundred thousand ohm
PDF
Album
Review
Published 15 May 2017

Study of the correlation between sensing performance and surface morphology of inkjet-printed aqueous graphene-based chemiresistors for NO2 detection

  • F. Villani,
  • C. Schiattarella,
  • T. Polichetti,
  • R. Di Capua,
  • F. Loffredo,
  • B. Alfano,
  • M. L. Miglietta,
  • E. Massera,
  • L. Verdoliva and
  • G. Di Francia

Beilstein J. Nanotechnol. 2017, 8, 1023–1031, doi:10.3762/bjnano.8.103

Graphical Abstract
  • temperature and under ambient conditions. Sensor-device fabrication Different substrates, paper (Epson, premium glossy photo paper), alumina (purity 96%, Rockwell hardness = 82, resistivity > 1014 Ω·cm, roughness = 12–20 microinches) and Si/SiO2 (thermal oxide 300 nm, Silicon Valley), with gold electrodes
PDF
Album
Supp Info
Full Research Paper
Published 09 May 2017

Measuring adhesion on rough surfaces using atomic force microscopy with a liquid probe

  • Juan V. Escobar,
  • Cristina Garza and
  • Rolando Castillo

Beilstein J. Nanotechnol. 2017, 8, 813–825, doi:10.3762/bjnano.8.84

Graphical Abstract
  • grating consists of a high-resistivity silicon(100) monocrystalline wafer topped with an array of sharp silicon peaks forming a 2D face-centered rectangular lattice whose primitive translation vectors have equal magnitudes of 3 ± 0.01 μm (see Figure 1a). The manufacturer gives nominal parameters for the
PDF
Album
Full Research Paper
Published 10 Apr 2017

3D Nanoprinting via laser-assisted electron beam induced deposition: growth kinetics, enhanced purity, and electrical resistivity

  • Brett B. Lewis,
  • Robert Winkler,
  • Xiahan Sang,
  • Pushpa R. Pudasaini,
  • Michael G. Stanford,
  • Harald Plank,
  • Raymond R. Unocic,
  • Jason D. Fowlkes and
  • Philip D. Rack

Beilstein J. Nanotechnol. 2017, 8, 801–812, doi:10.3762/bjnano.8.83

Graphical Abstract
  • , grain structure/morphology, and electrical resistivity of 3D platinum nanowires synthesized via electron beam induced deposition with and without an in situ pulsed laser assist process which photothermally couples to the growing Pt–C deposits. Notably, we demonstrate: 1) higher platinum concentration
  • critical electron, precursor, and laser parameters necessary to maintain high fidelity while simultaneously promoting high purity and low electrical resistivity. Experimental Electron beam induced deposition Platinum nanostructures were grown onto a silicon substrate from the MeCpPt(IV)Me3 precursor gas
  • was created using conventional nanofabrication methods in order to measure the electrical resistivity of freestanding nanoscale bridges. Geometric constraints (the freestanding nature of the nanobridge) necessitated a two-point probe configuration over the standard four-point measurement. A
PDF
Album
Supp Info
Full Research Paper
Published 07 Apr 2017

Silicon microgrooves for contact guidance of human aortic endothelial cells

  • Sara Fernández-Castillejo,
  • Pilar Formentín,
  • Úrsula Catalán,
  • Josep Pallarès,
  • Lluís F. Marsal and
  • Rosa Solà

Beilstein J. Nanotechnol. 2017, 8, 675–681, doi:10.3762/bjnano.8.72

Graphical Abstract
  • microscale features. Experimental Fabrication of grooved silicon substrates Groove samples were prepared on p-type silicon(100) wafers with a resistivity of 1–5 Ω·cm. The wafers were thermally oxidized at 1000 °C for 15 min in order to grow a thin SiO2 layer that will act as a mask in the anisotropic
PDF
Album
Full Research Paper
Published 22 Mar 2017

α-((4-Cyanobenzoyl)oxy)-ω-methyl poly(ethylene glycol): a new stabilizer for silver nanoparticles

  • Jana Lutze,
  • Miguel A. Bañares,
  • Marcos Pita,
  • Andrea Haase,
  • Andreas Luch and
  • Andreas Taubert

Beilstein J. Nanotechnol. 2017, 8, 627–635, doi:10.3762/bjnano.8.67

Graphical Abstract
  • -ascorbic acid (≥99%, Roth), N,N’-dicyclohexylcarbodiimide (99%, Aldrich), poly(ethylene glycol) methyl ether (Mn = 4830 g·mol−1, Aldrich), silver nitrate (≥99%, Sigma-Aldrich), sodium hydroxide (>99%, Roth), and trisodium citrate dihydrate (99.7%, Merck) were used as received. Water with a resistivity of
PDF
Album
Full Research Paper
Published 15 Mar 2017

Anodization-based process for the fabrication of all niobium nitride Josephson junction structures

  • Massimiliano Lucci,
  • Ivano Ottaviani,
  • Matteo Cirillo,
  • Fabio De Matteis,
  • Roberto Francini,
  • Vittorio Merlo and
  • Ivan Davoli

Beilstein J. Nanotechnol. 2017, 8, 539–546, doi:10.3762/bjnano.8.58

Graphical Abstract
  • (reducing it) the superconducting critical temperature, the pattern of the emission lines in the glow discharge provides direct information on the critical temperature of the deposited nitride films. For AlN the gas composition affects the resistivity of the film and, even in this case, the pattern of the
  • emission lines in the glow discharge provides information on the final resistivity of the sputtered films. The anodization of the NbN layer was obtained by means of a 1 mol solution of ammonium pentaborate in ethylene glycol. In order to oxidize NbN samples, we used a current-control technique, i.e., the
  • during the sputtering process. Under these conditions, we obtained films with different superconducting transition temperatures (Tc) ranging from 9.0 to 15.5 K. The room-temperature sheet resistance (resistivity per unit thickness) of the AlN films was also measured by using the four-probe technique
PDF
Album
Full Research Paper
Published 02 Mar 2017

Microfluidic setup for on-line SERS monitoring using laser induced nanoparticle spots as SERS active substrate

  • Oana-M. Buja,
  • Ovidiu D. Gordan,
  • Nicolae Leopold,
  • Andreas Morschhauser,
  • Jörg Nestler and
  • Dietrich R. T. Zahn

Beilstein J. Nanotechnol. 2017, 8, 237–243, doi:10.3762/bjnano.8.26

Graphical Abstract
  • water with a resistivity of 18 MΩ∙cm. The gold/citrate solution was prepared by solving 60 μL of 2% gold salt solution (1 g in 50 mL water) and 300 μL of 1% sodium citrate solution (1 g in 100 mL water) in 9.7 mL of ultrapure water. The silver/citrate mixture was kept in a dark glass bottle in order to
PDF
Album
Full Research Paper
Published 24 Jan 2017

Laser irradiation in water for the novel, scalable synthesis of black TiOx photocatalyst for environmental remediation

  • Massimo Zimbone,
  • Giuseppe Cacciato,
  • Mohamed Boutinguiza,
  • Vittorio Privitera and
  • Maria Grazia Grimaldi

Beilstein J. Nanotechnol. 2017, 8, 196–202, doi:10.3762/bjnano.8.21

Graphical Abstract
  • of 15 ns to give a fluence of 2.0 J/cm2. The scanning speed was kept at 100 mm/s. The laser was focused using a lens (focal length of 20 cm), on the bottom of a vessel filled with 9 mm of deionized Milli-Q water (resistivity 18 MΩ·cm) above the sample. The sample was irradiated at a fluence of 2 J
  • focused using a lens (focal length of 20 cm) on the bottom of a Teflon vessel filled with 5 mL of deionized Milli-Q water (resistivity 18 MΩ·cm). The sample was irradiated at a fluence of 20 J/cm2. Pt nanoparticles, dispersed in water, are stable for some months. The synthesis of Pt nanoparticles is
PDF
Album
Full Research Paper
Published 19 Jan 2017

Electron energy relaxation under terahertz excitation in (Cd1−xZnx)3As2 Dirac semimetals

  • Alexandra V. Galeeva,
  • Ivan V. Krylov,
  • Konstantin A. Drozdov,
  • Anatoly F. Knjazev,
  • Alexey V. Kochura,
  • Alexander P. Kuzmenko,
  • Vasily S. Zakhvalinskii,
  • Sergey N. Danilov,
  • Ludmila I. Ryabova and
  • Dmitry R. Khokhlov

Beilstein J. Nanotechnol. 2017, 8, 167–171, doi:10.3762/bjnano.8.17

Graphical Abstract
  • range 4.2–300 K. The resistivity temperature dependence is typical for degenerate semiconductors: the resistivity decrease with decreasing temperature from 300 K to 20 K is followed by a further saturation at T < 20 K. Since the free electron concentration does not change, this resistivity variation is
  • = 4.2 K for laser wavelengths 90 and 148 μm for a (Cd0.955Zn0.045)3As2 sample in the Dirac semimetal phase. Inset: The same data plotted as PEM effect amplitude versus incident radiation power P. The lines in the panels (a) and (b) are the guides for the eye. The values of resistivity, ρ, free electron
PDF
Album
Letter
Published 17 Jan 2017

Nanocrystalline TiO2/SnO2 heterostructures for gas sensing

  • Barbara Lyson-Sypien,
  • Anna Kusior,
  • Mieczylaw Rekas,
  • Jan Zukrowski,
  • Marta Gajewska,
  • Katarzyna Michalow-Mauke,
  • Thomas Graule,
  • Marta Radecka and
  • Katarzyna Zakrzewska

Beilstein J. Nanotechnol. 2017, 8, 108–122, doi:10.3762/bjnano.8.12

Graphical Abstract
  • electrical resistivity reduces to ρ = 1/(e·μe·ne) for n-type semiconductors, the 1/R(pH2) dependence assumes the same form as ne(pH2) does (Equations 8–10). Thus, n = 1/2, 1 or 2 are theoretically predicted for different oxygen species preadsorbed on the surface of the semiconductor. In the case of formation
PDF
Album
Full Research Paper
Published 12 Jan 2017

Sensitive detection of hydrocarbon gases using electrochemically Pd-modified ZnO chemiresistors

  • Elena Dilonardo,
  • Michele Penza,
  • Marco Alvisi,
  • Gennaro Cassano,
  • Cinzia Di Franco,
  • Francesco Palmisano,
  • Luisa Torsi and
  • Nicola Cioffi

Beilstein J. Nanotechnol. 2017, 8, 82–90, doi:10.3762/bjnano.8.9

Graphical Abstract
  • , causing changes in the surface potential and resistivity of the sensing material. The electrical resistance can increase or decrease, depending on the type of doping of MOx (p- or n-type) and on the analyte gas. There are oxidizing gases, such as nitrogen oxide (NO2), and ozone (O3), and reducing gases
PDF
Album
Full Research Paper
Published 10 Jan 2017

Surface-enhanced Raman scattering of self-assembled thiol monolayers and supported lipid membranes on thin anodic porous alumina

  • Marco Salerno,
  • Amirreza Shayganpour,
  • Barbara Salis and
  • Silvia Dante

Beilstein J. Nanotechnol. 2017, 8, 74–81, doi:10.3762/bjnano.8.8

Graphical Abstract
  • fundamental resonance frequency were used. Before each experiment, the quartz sensor was first cleaned in a UV/Ozone ProCleaner (BioForce Nanoscience, US) for 10 min, then washed with milli-Q (18.2 MΩ·cm resistivity) water, dried under nitrogen flux and cleaned again for 10 min in the ozone cleaner. The
PDF
Album
Supp Info
Full Research Paper
Published 09 Jan 2017

Graphene–polymer coating for the realization of strain sensors

  • Carmela Bonavolontà,
  • Carla Aramo,
  • Massimo Valentino,
  • Giampiero Pepe,
  • Sergio De Nicola,
  • Gianfranco Carotenuto,
  • Angela Longo,
  • Mariano Palomba,
  • Simone Boccardi and
  • Carosena Meola

Beilstein J. Nanotechnol. 2017, 8, 21–27, doi:10.3762/bjnano.8.3

Graphical Abstract
  • , R0 is the value of the electric resistance in unstrained conditions and ε0 is the residual strain occurring in the unload sample when resistivity value R0 is measured. The data reported in Figure 9 have been fit with Equation 3 using τ as the fit parameter, resulting in τ = 53 ± 11. The parameter τ
PDF
Album
Full Research Paper
Published 03 Jan 2017
Other Beilstein-Institut Open Science Activities