Al₂O₃/TiO₂ inverse opals from electrosprayed self-assembled templates

• Arnau Coll,
• Sandra Bermejo,
• David Hernández and
• Luís Castañer

Beilstein J. Nanotechnol. 2018, 9, 216–223, doi:10.3762/bjnano.9.23

• material deposition process with the maximum temperature that the polymeric nanoparticles can sustain, which is typically below 90–100 °C. This low temperature reduces the choices of materials that have suitable optical properties for a given application [35][36]. As an example, TiO2 deposited at <150 °C

• size) or silicon dioxide nanoparticles with dimensions typically several hundreds of micrometers with a close packed, face-centered cubic, three-dimensional order. In parallel we have shown the use of Al2O3 as a good candidate for the inverse opal supporting layer regarding the low temperature

• cm2), large thickness (>17 µm) inverse opals with very good reflectivity properties in the NIR spectral region using a double layer Al2O3/TiO2 colloidal crystal created by self-assembled polystyrene nanoparticles as a template. The results achieved were accomplished using low temperature processing

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

• Alexey D. Bolshakov,
• Alexey M. Mozharov,
• Georgiy A. Sapunov,
• Igor V. Shtrom,
• Nickolay V. Sibirev,
• Vladimir V. Fedorov,
• Evgeniy V. Ubyivovk,
• Maria Tchernycheva,
• George E. Cirlin and
• Ivan S. Mukhin

Beilstein J. Nanotechnol. 2018, 9, 146–154, doi:10.3762/bjnano.9.17

• /h on a substrate that underwent low-temperature (850 °C) annealing. It should be mentioned that in this case a silicon oxide layer covering the substrate was removed only partially or was not removed at all. This conclusion is based on the analysis of in situ reflection high-energy electron

• diffraction (RHEED) patterns: we did not observe (7 × 7) a Si surface reconstruction pattern while cooling down the substrate that was subjected to the low temperature annealing. On the contrary, when the high temperature annealing (at least 920 °С) was applied, we observed a clear (7 × 7) reconstruction

• approximate doping level for planar layers (see Table 1) is in close proximity with the doping level estimated via PL data analysis. So we conclude that the low-temperature PL is an effective noncontact method of assessing the doping level in GaN NWs. Theoretical model According to modern theoretical

Atomic layer deposition and properties of ZrO₂/Fe₂O₃ thin films

• Kristjan Kalam,
• Helina Seemen,
• Peeter Ritslaid,
• Mihkel Rähn,
• Aile Tamm,
• Kaupo Kukli,
• Aarne Kasikov,
• Joosep Link,
• Raivo Stern,
• Salvador Dueñas,
• Helena Castán and
• Héctor García

Beilstein J. Nanotechnol. 2018, 9, 119–128, doi:10.3762/bjnano.9.14

• ]. ALD growth of Fe2O3 from ferrocene and ozone is even possible at 200 °C, but at such a low temperature, the required pulse duration is very long. A maximal growth rate was achieved when ferrocene pulses were 40 s long and ozone pulses were 200 s [24]. ZrCl4 and Fe(C5H5)2 were evaporated at 161–163 °C

Electron-driven and thermal chemistry during water-assisted purification of platinum nanomaterials generated by electron beam induced deposition

• Ziyan Warneke,
• Markus Rohdenburg,
• Jonas Warneke,
• Janina Kopyra and
• Petra Swiderek

Beilstein J. Nanotechnol. 2018, 9, 77–90, doi:10.3762/bjnano.9.10

• cycles of precursor and O2 dosing, MeCpPtMe3 reacts with surface hydroxyl groups produced during a preceding O2 exposure half-cycle whereby Pt–O bonds are formed and CH4 is released [18][19]. The analogous reaction between MeCpPtMe3 and H2O does not contribute noticeably in our low temperature (105 K

Response under low-energy electron irradiation of a thin film of a potential copper precursor for focused electron beam induced deposition (FEBID)

• Leo Sala,
• Iwona B. Szymańska,
• Céline Dablemont,
• Anne Lafosse and
• Lionel Amiaud

Beilstein J. Nanotechnol. 2018, 9, 57–65, doi:10.3762/bjnano.9.8

• ligands was done by heating. Spectrum g in Figure 2 was recorded under the same conditions as spectrum f, but after a mild annealing above room temperature (T = 305 K), desorption was induced, visible by a small pressure rise in the chamber during the process. Back to low temperature, spectrum g is

Transition from silicene monolayer to thin Si films on Ag(111): comparison between experimental data and Monte Carlo simulation

• Alberto Curcella,
• Romain Bernard,
• Yves Borensztein,
• Silvia Pandolfi and
• Geoffroy Prévot

Beilstein J. Nanotechnol. 2018, 9, 48–56, doi:10.3762/bjnano.9.7

• atom electron spectroscopy [35] and deuterium exposure of the film [36], whereas opposite conclusions were obtained from STM observations after applying a bias pulse at low temperature [33]. Very recently, the existence of two different growth modes on Ag(111), depending on the substrate temperature

• , has been proposed [37][38]. At low temperature (T = 470 K), multilayer silicene would form, without Ag at the surface, whereas diamond-like growth would occur at high temperature (T = 570 K), with Ag acting as a surfactant. Thus, open questions remain on the nature of the films formed as a function of

• measurements or to the different evaporation rates used during the experiments. Conclusion The quantitative analysis of the evolution of AES intensity during Si growth at different temperatures shows that the growth mechanism is different for low temperature deposition (T = 200 K) and in the regime described

Beyond Moore’s technologies: operation principles of a superconductor alternative

• Igor I. Soloviev,
• Nikolay V. Klenov,
• Sergey V. Bakurskiy,
• Mikhail Yu. Kupriyanov,
• Alexander L. Gudkov and
• Anatoli S. Sidorenko

Beilstein J. Nanotechnol. 2017, 8, 2689–2710, doi:10.3762/bjnano.8.269

Inelastic electron tunneling spectroscopy of difurylethene-based photochromic single-molecule junctions

• Youngsang Kim,
• Safa G. Bahoosh,
• Dmytro Sysoiev,
• Thomas Huhn,
• Fabian Pauly and
• Elke Scheer

Beilstein J. Nanotechnol. 2017, 8, 2606–2614, doi:10.3762/bjnano.8.261

• employing O2 plasma in a reactive ion etcher to form a freestanding bridge, as shown in Figure 1a. After mounting the MCBJ sample, which is covered with C5F-ThM molecules either in the open or the closed form, charge transport measurements were performed at low temperature (4.2 K) in a custom-made vacuum

Localized growth of carbon nanotubes via lithographic fabrication of metallic deposits

• Fan Tu,
• Martin Drost,
• Imre Szenti,
• Janos Kiss,
• Zoltan Kónya and
• Hubertus Marbach

Beilstein J. Nanotechnol. 2017, 8, 2592–2605, doi:10.3762/bjnano.8.260

• was carried out with a precursor gas mixture of N2, H2 and C2H4 (120:120:120 sccm) at 1023 K. This temperature is even lower than the low temperature used in the case of Fe deposits on the substrate of Al2O3. Figure 10b depicts the Co-containing deposit after CVD. Obviously, the CNTs grew with high

PTFE-based microreactor system for the continuous synthesis of full-visible-spectrum emitting cesium lead halide perovskite nanocrystals

• Chengxi Zhang,
• Weiling Luan,
• Yuhang Yin and
• Fuqian Yang

Beilstein J. Nanotechnol. 2017, 8, 2521–2529, doi:10.3762/bjnano.8.252

• . [20] independently demonstrated the feasibility of synthesizing CsPbX3 QDs within a few seconds at low temperature. Sun et al. [21] reported the formation of shape-controlled CsPbX3 perovskite nanocrystals of three different morphologies via the re-precipitation process at room temperature. Chen et al

Fabrication of CeO₂–MO_x (M = Cu, Co, Ni) composite yolk–shell nanospheres with enhanced catalytic properties for CO oxidation

• Ling Liu,
• Jingjing Shi,
• Hongxia Cao,
• Ruiyu Wang and
• Ziwu Liu

Beilstein J. Nanotechnol. 2017, 8, 2425–2437, doi:10.3762/bjnano.8.241

• conversion as reached at a relatively low temperature of 145 °C over the CeO2–CuOx-2 sample. Furthermore, the CeO2–CuOx catalyst is more active than the CeO2–CoOx and CeO2–NiO catalysts, indicating that the catalytic activity is correlates with the metal oxide. Additionally, this versatile synthesis approach

• observed. The wide low-temperature band centered at 179 °C originates from the highly dispersed CuOx clusters, while the sharp high-temperature peak located at 200 °C is due to the strong interactions in the Cu–[O]–Ce structure [13]. In general, commercial Cu2O and pure CuO synthesized using a conventional

• CeO2–CuOx-2 sample is comparable to the traditional noble-metal–CeO2 system, yielding complete CO conversion at a relatively low temperature of 145 °C. A greatly enhanced performance of the composites in CO oxidation can be attributed to the incorporation of highly-dispersed MOx onto the CeO2 surface

Comparing postdeposition reactions of electrons and radicals with Pt nanostructures created by focused electron beam induced deposition

• Julie A. Spencer,
• Michael Barclay,
• Miranda J. Gallagher,
• Robert Winkler,
• Ilyas Unlu,
• Yung-Chien Wu,
• Harald Plank,
• Lisa McElwee-White and
• D. Howard Fairbrother

Beilstein J. Nanotechnol. 2017, 8, 2410–2424, doi:10.3762/bjnano.8.240

• compared to the as-deposited structure. Consequently, approaches which have been attracting increased interest are the so-called “low temperature” purification strategies, where carbon is removed at temperatures low enough to avoid changing the structure and morphology of the deposit. In FEBID purification

• degree of nanostructure resolution. Low-temperature purification can also be achieved by reactive species generated by an independent source. Botman et al. [26] treated FEBID deposits created from MeCpPtMe3 with atomic hydrogen (AH), which resulted in a decrease in carbon content (from 81 to 65 atom

• % to ≈87%). This is qualitatively consistent with our previous low-temperature UHV surface science studies on the effect of electron irradiation on 1–2 mL cis-Pt(CO)2Cl2 films [29]. Based on earlier studies [29][31] it is reasonable to assume that the purification process (PtCl2 + 2e− → Pt(s) + 2 Cl−(g

Robust procedure for creating and characterizing the atomic structure of scanning tunneling microscope tips

• Sumit Tewari,
• Koen M. Bastiaans,
• Milan P. Allan and
• Jan M. van Ruitenbeek

Beilstein J. Nanotechnol. 2017, 8, 2389–2395, doi:10.3762/bjnano.8.238

• determined ex situ in a field-ion microscope (FIM) [23][24]. However, very few studies have been made to image the tip structure in situ in STM and show its evolution upon tip preparation. Inspiration for our current approach comes from work with low-temperature STM in cryogenic vacuum [25], where the

• shape with a direct detection technique rather than studying conductance versus tip displacement or STM image contrast. Experimental The experiments were performed in a Unisoku ultra high vacuum (UHV) and low-temperature STM with a base temperature of 2 K. The in-plane (XY) scan range is set by the

• exploit the capabilities of the low-temperature STM setup for imaging the evolution of the tip structure by scanning over an isolated adatom on the surface. The obtained STM images are convolutions of the topography and electronic states of sample and tip. Lang [31] has shown theoretically using two

Changes of the absorption cross section of Si nanocrystals with temperature and distance

• Michael Greben,
• Petro Khoroshyy,
• Sebastian Gutsch,
• Daniel Hiller,
• Margit Zacharias and
• Jan Valenta

Beilstein J. Nanotechnol. 2017, 8, 2315–2323, doi:10.3762/bjnano.8.231

• flux. For the low-temperature experiments the samples are placed in a cryostat (Janis ST-500). Results and Discussion ACS model Let us consider the model originally presented by Kovalev et al. [13][14] and then slightly modified in our recent paper [10]. A Si NC is considered as a quasi-two-level

Modelling focused electron beam induced deposition beyond Langmuir adsorption

• Dédalo Sanz-Hernández and
• Amalio Fernández-Pacheco

Beilstein J. Nanotechnol. 2017, 8, 2151–2161, doi:10.3762/bjnano.8.214

• area (see Figure 5): from v2 ≈ 104·ve at room temperature and low current (red line) to v2 ≈ 102·ve at room temperature and high current (green line, parallel to the red one). The drop in v2 when moving to cryogenic temperatures is too large to be represented in the figure; low temperature experimental

• to the estimated areas where experiments take place. These regions are estimated just as lines, and not as points, since the value for νGAS is not available. Red line: Room temperature, low current. Green line: Room temperature, high current. The low temperature, low current region takes place at

• much lower ν2 / νGAS values as those plotted in the map. Vertical arrows represent one of the possible experimental transitions in GR observed at room temperature, from low to high current. Horizontal arrows represent one of the possible GR transitions observed at low current, from room to low

Substrate and Mg doping effects in GaAs nanowires

• Perumal Kannappan,
• Nabiha Ben Sedrine,
• Jennifer P. Teixeira,
• Maria R. Soares,
• Bruno P. Falcão,
• Maria R. Correia,
• Nestor Cifuentes,
• Emilson R. Viana,
• Marcus V. B. Moreira,
• Geraldo M. Ribeiro,
• Alfredo G. de Oliveira,
• Juan C. González and
• Joaquim P. Leitão

Beilstein J. Nanotechnol. 2017, 8, 2126–2138, doi:10.3762/bjnano.8.212

• cells (1.519 eV for GaAs bulk at low temperature). Additionally, Ga is more abundant and less toxic than other elements (e.g., In and Cd, respectively) involved in other compounds commonly used in thin film-based solar cells like Cu(In,Ga)Se2 and CdTe. Bulk GaAs exhibits the zincblende (ZB) crystal

Adsorbate-driven cooling of carbene-based molecular junctions

• Giuseppe Foti and
• Héctor Vázquez

Beilstein J. Nanotechnol. 2017, 8, 2060–2068, doi:10.3762/bjnano.8.206

• with the electronic system has been derived in the framework of NEGF theory [6][37][39]. In the low temperature limit the emission rate of vibrational quanta by tunneling electrons is expressed as: while the absorption rates are given by: The matrices are given by the product of the electron

• driving the system to the BE distribution. We also assume a relatively low temperature of the bath T0 of 100 K. Changing the temperature of the bath would roughly shift the offset of accumulated energy of the vibrational modes and of the effective temperature of the molecule [37]. Results and Discussion

Advances and challenges in the field of plasma polymer nanoparticles

• Andrei Choukourov,
• Pavel Pleskunov,
• Daniil Nikitin,
• Valerii Titov,
• Artem Shelemin,
• Mykhailo Vaidulych,
• Anna Kuzminova,
• Pavel Solař,
• Jan Hanuš,
• Jaroslav Kousal,
• Ondřej Kylián,
• Danka Slavínská and
• Hynek Biederman

Beilstein J. Nanotechnol. 2017, 8, 2002–2014, doi:10.3762/bjnano.8.200

• polymers per se, regardless of the attractiveness and utility of these may be, but will rather focus on materials that are created as a result of a low-temperature non-equilibrium plasma operating in organic vapours. The term “plasma polymer” was introduced in the 1960s to convey the interrelation between

• surface instabilities, similar to a popcorn effect observed in conventional polymer particles [64]. As it was mentioned, the involvement of low-temperature plasma represents a unique feature that distinguishes this approach from other non-plasma-based methods: NPs acquire an electrical charge when

Coexistence of strongly buckled germanene phases on Al(111)

• Weimin Wang and
• Roger I. G. Uhrberg

Beilstein J. Nanotechnol. 2017, 8, 1946–1951, doi:10.3762/bjnano.8.195

• temperatures significantly higher than 87 °C. After deposition at a substrate temperature of ≈200 °C, sharp LEED patterns were observed for two phases, i.e., a 3×3 phase and a new √7×√7 superstructure. These phases, formed at higher temperature, deviate from the low temperature phases in the sense that the STM

• germanene prepared at low temperature (≈87 °C) [13]. It is interesting to consider the structural results by Fukaya et al. [14] obtained from the (3×3) reconstruction prepared in a way similar to that in [13], i.e., at low sample temperature and a low evaporation rate. The results from the TRHEPD technique

Fabrication of carbon nanospheres by the pyrolysis of polyacrylonitrile–poly(methyl methacrylate) core–shell composite nanoparticles

• Dafu Wei,
• Youwei Zhang and
• Jinping Fu

Beilstein J. Nanotechnol. 2017, 8, 1897–1908, doi:10.3762/bjnano.8.190

• nanoparticles. Furthermore, an extra acid-washing process was needed to remove the inorganic salt layer [33][36]. As the cyclization reactions between nitriles mainly occur during the preoxidization and low-temperature carbonization steps (<450 °C), we tried to coat with a protective poly(methyl methacrylate

• ) (PMMA) layer, which would remain stable during the preoxidation and the low-temperature carbonization. This layer, however, will completely degrade after the high-temperature carbonization on the surface of the PAN nanoparticle to inhibit the inter-particular adhesion between carbon nanospheres; thus

• observations were performed on a Hitachi S-4800 field emission scanning electron microscope. Powder X-ray diffraction (XRD) patterns were recorded using an X-ray diffractometer (Model D8 Advance, Bruker AXS) with Cu Kα radiation. Low-temperature nitrogen adsorption experiments were performed at the boiling

Transport characteristics of a silicene nanoribbon on Ag(110)

• Ryoichi Hiraoka,
• Chun-Liang Lin,
• Kotaro Nakamura,
• Ryo Nagao,
• Maki Kawai,
• Ryuichi Arafune and
• Noriaki Takagi

Beilstein J. Nanotechnol. 2017, 8, 1699–1704, doi:10.3762/bjnano.8.170

• Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 304-0044, Japan 10.3762/bjnano.8.170 Abstract We present the transport characteristics of individual silicene nanoribbons (SiNRs) grown on Ag(110). By lifting up a single SiNR with a low-temperature scanning tunneling microscope tip, a

• SiNR on Ag(110). To isolate SiNR from the Ag substrate, we lift up an individual SiNR with the tip of a low-temperature scanning tunneling microscope (STM) and fabricate a nanojunction in which the lifted SiNR bridges the gap between the STM tip and the substrate. This method enables us to isolate the

• , and that SiNR is a good conductor with conductance of 0.1G0–1G0. In addition, we have found a peak structure at the Fermi level for the SiNR nanojunctions, which is relevant to the edge of the SiNR. Experimental All experiments were carried out in an ultra-high vacuum (UHV) chamber equipped with a low

Process-specific mechanisms of vertically oriented graphene growth in plasmas

• Subrata Ghosh,
• Shyamal R. Polaki,
• Niranjan Kumar,
• Sankarakumar Amirthapandian,
• Mohamed Kamruddin and
• Kostya (Ken) Ostrikov

Beilstein J. Nanotechnol. 2017, 8, 1658–1670, doi:10.3762/bjnano.8.166

• growth. Plasma-enhanced chemical vapor deposition (PECVD) is one of the most suitable techniques for the transfer-free and catalyst-free growth of VGNs at low temperature [15][16][17][18][19][20]. Various research groups reported the growth mechanism of VGNs during PECVD [21][22][23][24]. In brief, the

• this film is lower than that of a few-layer graphene (9.1 kΩ/sq for three layers) reported by Peng and co-workers [63]. Such direct growth on an insulating substrate at low temperature without post-growth treatment offers a good compatibility with the semiconductor processing technologies. A sheet

Group-13 and group-15 doping of germanane

• Nicholas D. Cultrara,
• Maxx Q. Arguilla,
• Shishi Jiang,
• Chuanchuan Sun,
• Michael R. Scudder,
• R. Dominic Ross and
• Joshua E. Goldberger

Beilstein J. Nanotechnol. 2017, 8, 1642–1648, doi:10.3762/bjnano.8.164

• reported with device hole mobilites ranging from 70 to 150 cm2·V−1·s−1 from room temperature to low temperature, indicating that germanane has the potential to be a viable electronic building block for 2D transistors. Together, this emphasizes the need for further control of doping behavior in these

Oxidative stabilization of polyacrylonitrile nanofibers and carbon nanofibers containing graphene oxide (GO): a spectroscopic and electrochemical study

• İlknur Gergin,
• Ezgi Ismar and
• A. Sezai Sarac

Beilstein J. Nanotechnol. 2017, 8, 1616–1628, doi:10.3762/bjnano.8.161

• , heating rate, tension of the fiber, total stabilization time and dwell time, air flow rate and pre-stabilization treatment [13]. Carbonization is the next step in the process. The carbonization processes can be divided into low-temperature and high-temperature carbonization, and graphitization above 2000

• the low-temperature carbonization process with increasing elimination of other elements (N,H,O) [38][48]. Electrochemical impedance measurements of oxidized PAN nanofibers Electrochemical properties of oxidized PAN nanofibers were analyzed by using electrochemical impedance spectroscopy (EIS). EIS

Low-temperature CO oxidation over Cu/Pt co-doped ZrO₂ nanoparticles synthesized by solution combustion

• Amit Singhania and
• Shipra Mital Gupta

Beilstein J. Nanotechnol. 2017, 8, 1546–1552, doi:10.3762/bjnano.8.156