Semitransparent Sb₂S₃ thin film solar cells by ultrasonic spray pyrolysis for use in solar windows

• Jako S. Eensalu,
• Atanas Katerski,
• Erki Kärber,
• Lothar Weinhardt,
• Monika Blum,
• Clemens Heske,
• Wanli Yang,
• Ilona Oja Acik and
• Malle Krunks

Beilstein J. Nanotechnol. 2019, 10, 2396–2409, doi:10.3762/bjnano.10.230

• spectroscopy, semitransparent Sb2S3 thin films can be rapidly grown in air by the area-scalable ultrasonic spray pyrolysis method. Integrated into a ITO/TiO2/Sb2S3/P3HT/Au solar cell, a power conversion efficiency (PCE) of 5.5% at air mass 1.5 global (AM1.5G) is achieved, which is a record among spray

• -deposited Sb2S3 solar cells. An average visible transparency (AVT) of 26% of the back-contact-less ITO/TiO2/Sb2S3 solar cell stack in the wavelength range of 380–740 nm is attained by tuning the Sb2S3 absorber thickness to 100 nm. In scale-up from mm2 to cm2 areas, the Sb2S3 hybrid solar cells show a

• chemical methods [20]. Until now, semitransparency aspects of Sb2S3 solar cells have only been studied by Zimmermann et al., who reported a PCE of 4.25% for a tin-doped indium oxide (ITO)/TiO2/Sb2S3/poly(3-hexylthiophene-2,5-diyl) (P3HT)/Ag solar cell with a 50–70 nm thick Sb2S3 absorber and a

Polyvinylpyrrolidone as additive for perovskite solar cells with water and isopropanol as solvents

• Chen Du,
• Shuo Wang,
• Xu Miao,
• Wenhai Sun,
• Yu Zhu,
• Chengyan Wang and
• Ruixin Ma

Beilstein J. Nanotechnol. 2019, 10, 2374–2382, doi:10.3762/bjnano.10.228

• cell (iPSC), Pengcheng Zhou et al. managed to achieve a signifanct boost in efficiency [30]. The photovoltaic properties of inverted polymer solar cells using a PVP-modified indium tin oxide (ITO) layer as the electron-collecting electrode were reported on by J. W. Shim and co-workers [31]. In this

• purchased from Alfa Aesar. Methylammonium iodide (MAI), methylammonium chloride (MACl) and Spiro-OMeTAD were purchased from Xi’an Polymer Light Technology Corp. ITO glasses with a sheet resistance of 8 Ω/sq were also purchased from Xi’an Polymer Light Technology Corp. All chemicals were used as recieved

• . Device fabrication Prior to spin-coating, the ITO glass substrate was cleaned sequentially with detergent, acetone, ethanol, deionized water, each for 15 min, then dried with a nitrogen flow, and then cleaned with UV/ozone for 20 min. A thin layer of SnO2 nanoparticles was spin-coated on the ITO

Nontoxic pyrite iron sulfide nanocrystals as second electron acceptor in PTB7:PC₇₁BM-based organic photovoltaic cells

• Olivia Amargós-Reyes,
• José-Luis Maldonado,
• Omar Martínez-Alvarez,
• María-Elena Nicho,
• José Santos-Cruz,
• Juan Nicasio-Collazo,
• Irving Caballero-Quintana and
• Concepción Arenas-Arrocena

Beilstein J. Nanotechnol. 2019, 10, 2238–2250, doi:10.3762/bjnano.10.216

• of these NCs incorporated into the PTB7:PC71BM active layer of bulk-heterojunction ternary organic photovoltaic (OPV) cells. The OPV devices are fabricated with the direct configuration glass/ITO/PEDOT:PSS/PTB7:PC71BM:FeS2/PFN/FM. The Field’s metal (FM) is a eutectic alloy composed of 32.5% Bi, 51

• temperatures. In this work, semispherical pyrite NCs are synthesized and added at different concentrations as second electron acceptors into the PTB7:PC71BM active layer of the OPVs that are fabricated with the direct configuration glass/ITO/PEDOT:PSS/PTB7:PC71BM:FeS2/PFN/FM, where PFN is poly[(9,9-bis(3'-(N,N

• OPV layers cross-section. We observe thicknesses of each layer that acceptably correlate with the sheet thicknesses determined by the AFM measurement in contact mode, namely ITO ≈197 nm, PEDOT:PSS ≈40 nm and PTB7:PC71BM active layer ≈113 nm. Figure S3(a–d) in Supporting Information File 1 shows the

Liquid crystal tunable claddings for polymer integrated optical waveguides

• José M. Otón,
• Manuel Caño-García,
• Fernando Gordo,
• Eva Otón,
• Morten A. Geday and
• Xabier Quintana

Beilstein J. Nanotechnol. 2019, 10, 2163–2170, doi:10.3762/bjnano.10.209

• constructed. The cell consists of a LC (Merck MDA-98-1602, no = 1.52, ne = 1.78) sandwiched between the substrate containing the waveguides and an ITO-coated glass plate to provide a conductive layer for applying electric signals (Figure 8). The substrate Si wafer was employed as counter electrode. Si was

Review of advanced sensor devices employing nanoarchitectonics concepts

• Katsuhiko Ariga,
• Tatsuyuki Makita,
• Masato Ito,
• Taizo Mori,
• Shun Watanabe and
• Jun Takeya

Beilstein J. Nanotechnol. 2019, 10, 2014–2030, doi:10.3762/bjnano.10.198

• Katsuhiko Ariga Tatsuyuki Makita Masato Ito Taizo Mori Shun Watanabe Jun Takeya WPI-MANA, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha

Precise local control of liquid crystal pretilt on polymer layers by focused ion beam nanopatterning

• Maxim V. Gorkunov,
• Irina V. Kasyanova,
• Vladimir V. Artemov,
• Alena V. Mamonova and
• Serguei P. Palto

Beilstein J. Nanotechnol. 2019, 10, 1691–1697, doi:10.3762/bjnano.10.164

• display-quality glass substrates covered with ca. 150 nm thin transparent ITO electrodes. Polyimide (PI) is deposited onto the substrates by a conventional routine combining a precursor spin-coating and annealing at 190 °C for 1 h, which produces a mechanically robust PI layer of 10–20 nm thickness. Next

• , and 16 pixels in 1 μm, 1.5 μm, and 2 μm periodic patterns, respectively, the duty factor values are naturally discretized as illustrated by Figure 1. Next, LC cells are assembled by stacking the FIB-patterned substrate with another glass substrate, bearing an ITO layer and a vertically aligning layer

Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering

• Petronela Prepelita,
• Ionel Stavarache,
• Doina Craciun,
• Florin Garoi,
• Catalin Negrila,
• Beatrice Gabriela Sbarcea and
• Valentin Craciun

Beilstein J. Nanotechnol. 2019, 10, 1511–1522, doi:10.3762/bjnano.10.149

• , P.O. Box MG-7, Magurele 077125, Ilfov, Romania ICPE-CA, Splaiul Unirii 313, Sector 3, 74204, Bucharest, Romania Dentix MILLENNIUM SRL, Sabareni-Ilfov, Romania 10.3762/bjnano.10.149 Abstract In this work, rapid thermal annealing (RTA) was applied to indium tin oxide (ITO) films in ambient atmosphere

• , resulting in significant improvements of the quality of the ITO films that are commonly used as conductive transparent electrodes for photovoltaic structures. Starting from a single sintered target (purity 99.95%), ITO thin films of predefined thickness (230 nm, 300 nm and 370 nm) were deposited at room

• deposition thickness or the RTA process. X-ray diffraction investigations revealed a cubic nanocrystalline structure for the as-deposited ITO films. After RTA, polycrystalline compounds with a textured (222) plane were observed. X-ray photon spectroscopy was used to confirm the beneficial effect of the RTA

Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble

• David van Treeck,
• Johannes Ledig,
• Gregor Scholz,
• Jonas Lähnemann,
• Mattia Musolino,
• Abbes Tahraoui,
• Oliver Brandt,
• Andreas Waag,
• Henning Riechert and
• Lutz Geelhaar

Beilstein J. Nanotechnol. 2019, 10, 1177–1187, doi:10.3762/bjnano.10.117

• solution of hydrogen silsesquioxane (HSQ). Subsequently, the upper 70 nm of the p-type segments of the NWs were uncovered by dry etching with CHF3 and a 120 nm thick indium tin oxide (ITO) layer was sputtered onto the NW tips. Finally, Ti/Au bonding pads and an Al/Au n-type contact were deposited on the

• threshold voltages of single-NW measurements in comparison to the 3.3 V of a NW-ensemble LED with a processed ITO top-contact most likely result from a Schottky-type contact at the p-GaN/tungsten interface. To analyze the I–V behavior of a single NW in more detail, Figure 5b shows the I–V curve of NW E in

• for the NW-ensemble LED with optimized ITO top contact to the p-GaN NW tips the ideality factor is 9.2 [12], that is, much smaller than for the single-NW measurement presented here. Thus, we conclude that the high ideality factor found here is caused by the contact between the tungsten tip and the p

Review of time-resolved non-contact electrostatic force microscopy techniques with applications to ionic transport measurements

• Aaron Mascaro,
• Yoichi Miyahara,
• Tyler Enright,
• Omur E. Dagdeviren and
• Peter Grütter

Beilstein J. Nanotechnol. 2019, 10, 617–633, doi:10.3762/bjnano.10.62

• pulses resulted in charging/discharging of the sample (PFB:F8BT on ITO), which was also modelled as a single exponential in time: Vt(t) = V[1 − exp(−t/τc)]. This allowed for the amplitude to be written as a function of tp and τc where it again displayed a sinusoidal dependence on . Note that tp in Figure

Temperature-dependent Raman spectroscopy and sensor applications of PtSe₂ nanosheets synthesized by wet chemistry

• Mahendra S. Pawar and
• Dattatray J. Late

Beilstein J. Nanotechnol. 2019, 10, 467–474, doi:10.3762/bjnano.10.46

• device fabrication and testing Sensor devices were fabricated on a tin-doped indium oxide (ITO) substrate with a channel length of ≈300 µm and width ≈5 mm. The PtSe2 nanosheet powder was dispersed in N-methyl-2-pyrrolidone (NMP) solvent and then drop casted between the channels. The devices were further

Geometrical optimisation of core–shell nanowire arrays for enhanced absorption in thin crystalline silicon heterojunction solar cells

• Robin Vismara,
• Olindo Isabella,
• Andrea Ingenito,
• Fai Tong Si and
• Miro Zeman

Beilstein J. Nanotechnol. 2019, 10, 322–331, doi:10.3762/bjnano.10.31

• , a 100 nm thick transparent tin-doped indium oxide (In2O3:Sn, ITO) was deposited at low power and low temperature, using radio-frequency (RF) magnetron sputtering. The cell area was defined as 5 mm × 5 mm, using a mask during ITO deposition. The reported equivalent thickness values of thin films on

• (in addition to the thinner bulk and the periodicity of the nanowire array): (i) To reduce parasitic absorption at the front, the a-Si:H and p-type nc-SiOx:H layers are significantly thinner, and IOH is preferred to ITO due to its higher transparency and conductivity [55][56]; (ii) at the back, GZO is

Site-specific growth of oriented ZnO nanocrystal arrays

• Rekha Bai,
• Dinesh K. Pandya,
• Sujeet Chaudhary,
• Veer Dhaka,
• Vladislav Khayrudinov,
• Jori Lemettinen,
• Christoffer Kauppinen and
• Harri Lipsanen

Beilstein J. Nanotechnol. 2019, 10, 274–280, doi:10.3762/bjnano.10.26

• University, Tietotie 3, 02150 Espoo, Finland 10.3762/bjnano.10.26 Abstract We report on the growth of ZnO nanocrystals having a hexagonal, prismatic shape, sized 700 nm × 600 nm, on bare indium tin oxide (ITO) substrates. The growth is induced by a low ion flux and involves a low-temperature

• electrodeposition technique. Further, vertically aligned periodic nanocrystal (NC) growth is engineered at predefined positions on polymer-coated ITO substrates patterned with ordered pores. The vertical alignment of ZnO NCs along the c-axis is achieved via ion-by-ion nucleation-controlled growth for patterned

• patterned substrates and a cost-effective growth technique. In particular, we demonstrate the growth of hexagonal faceted self-assembled twin ZnO NCs on bare indium tin oxide (ITO) substrate via a facile low temperature electrodeposition technique that has the potential of yielding good crystal quality with

Uniform Sb₂S₃ optical coatings by chemical spray method

• Jako S. Eensalu,
• Atanas Katerski,
• Erki Kärber,
• Ilona Oja Acik,
• Arvo Mere and
• Malle Krunks

Beilstein J. Nanotechnol. 2019, 10, 198–210, doi:10.3762/bjnano.10.18

• uniform thickness. First, amorphous Sb2S3 layers, likely forming by 3D Volmer–Weber island growth through a molten phase reaction between SbCl3 and SC(NH2)2, were deposited in air on a glass/ITO/TiO2 substrate by ultrasonic spraying of methanolic Sb/S 1:3 molar ratio solution at 200–210 °C. Second, we

• uniform thickness to be applied as a photovoltaic absorber by ultrasonic spraying on planar glass/ITO/TiO2 substrates, followed by a post-deposition treatment. To this end, we studied the effect of the deposition temperature (TD), the molar ratio of precursors SbCl3 and thiourea (SC(NH2)2) in the spray

• temperatures [16]. The vibrational bands corresponding to Sb2O3 were not detected by Raman spectroscopy in any of the studied glass/ITO/TiO2/Sb2S3 samples. X-ray diffraction (XRD) provides qualitative information on the phase composition and crystal structure. XRD patterns of reference glass/ITO/TiO2 samples

Nanoporous water oxidation electrodes with a low loading of laser-deposited Ru/C exhibit enhanced corrosion stability

• Sandra Haschke,
• Dmitrii Pankin,
• Vladimir Mikhailovskii,
• Maïssa K. S. Barr,
• Adriana Both-Engel,
• Alina Manshina and
• Julien Bachmann

Beilstein J. Nanotechnol. 2019, 10, 157–167, doi:10.3762/bjnano.10.15

• , microscope cover glasses provided with approx. 700 nm of heat-treated indium tin oxide (ITO, which serves as the electrical contact in subsequent electrochemical measurements) are placed for laser-induced coating on a microcuvette filled with the precursor solution. An unfocused He-Cd laser beam irradiates

• inside the Al2O3 pores (with additional material on the front sample side, Figure 6a,d). In a last step, an ITO electrical contact is sputter-coated onto the front side of the sample. EDX spectroscopy reveals the presence of expected elements Al, O, P and In of the substrate and electrical contact, as

• oxidized, and in part hydrated. Water oxidation at nanostructured Ru/C electrodes We then applied our nanoporous Ru/C electrodes to the water oxidation reaction. Therefore, an approx. 1 μm thick ITO layer at one pore extremity serves as an electrical contact. We choose pH 4 (KH2PO4 buffer) for the

Threshold voltage decrease in a thermotropic nematic liquid crystal doped with graphene oxide flakes

• Mateusz Mrukiewicz,
• Krystian Kowiorski,
• Paweł Perkowski,
• Rafał Mazur and
• Małgorzata Djas

Beilstein J. Nanotechnol. 2019, 10, 71–78, doi:10.3762/bjnano.10.7

• were filled by capillary action into cells. The cells consisted of two pieces of parallel glass plates of thickness d = 1.1 mm (Precision Glas & Optik GmbH), covered by thin (d ≈ 100 nm) ITO conducting layers, separated by 1.6 µm thick glass spacers. An active area was 25 mm2. On the glass plates a

• switching mechanism. A discrepancy is a consequence of the fact that EO measurements are carried out on a small, isolated area while in DS data are collected from a whole ITO electrode. For this reason, the values of the threshold voltage from the DS investigations (Uth-DS) using the bias electric field are

Zn/F-doped tin oxide nanoparticles synthesized by laser pyrolysis: structural and optical properties

• Florian Dumitrache,
• Iuliana P. Morjan,
• Elena Dutu,
• Ion Morjan,
• Claudiu Teodor Fleaca,
• Monica Scarisoreanu,
• Alina Ilie,
• Marius Dumitru,
• Cristian Mihailescu,
• Adriana Smarandache and
• Gabriel Prodan

Beilstein J. Nanotechnol. 2019, 10, 9–21, doi:10.3762/bjnano.10.2

• commercial applications that require both transparency and electrical conductivity (employed in liquid crystal displays, organic light emitting diodes (OLEDs), touchscreens or in solar panels) is indium tin oxide (ITO), which unfortunately suffers from high cost and a limited supply of indium [5]. One

• promising, lower cost, but good performing material alternatives to ITO for these types of applications is fluorine-doped tin oxide (FTO) [8]. Regarding the cation doping for the synthesis of tin-based transparent and conductive oxidic (TCO) materials, the literature has been focused on doping with i

Oriented zinc oxide nanorods: A novel saturable absorber for lasers in the near-infrared

• Pavel Loiko,
• Tanujjal Bora,
• Josep Maria Serres,
• Haohai Yu,
• Magdalena Aguiló,
• Francesc Díaz,
• Uwe Griebner,
• Valentin Petrov,
• Xavier Mateos and
• Joydeep Dutta

Beilstein J. Nanotechnol. 2018, 9, 2730–2740, doi:10.3762/bjnano.9.255

• compact laser designs (e.g., microchip or waveguide lasers) [22]. ZnO NRs have not been explored as saturable absorbers, yet. Singh et al. studied Mn2+-doped ZnO NRs grown from an aqueous solution on indium tin oxide (ITO) substrates which exhibited saturable absorption (optical bleaching) at 0.532 µm

Optimization of Mo/Cr bilayer back contacts for thin-film solar cells

• Nima Khoshsirat,
• Fawad Ali,
• Vincent Tiing Tiong,
• Mojtaba Amjadipour,
• Hongxia Wang,
• Mahnaz Shafiei and
• Nunzio Motta

Beilstein J. Nanotechnol. 2018, 9, 2700–2707, doi:10.3762/bjnano.9.252

• developed in this work seems to be a good option to be used as a back contact in thin-film solar cells. In order to prove this a CZTS thin-film solar cell has been made by stacking the ITO/ZnO/CdS/Cu2ZnSnS4 on top of Mo/Cr bilayer back contact on the SLG substrate. A 1.5 μm thick CZTS was deposited through

• a two-step process of sulfurization of stacked metallic layers of Cu/Sn/Zn. Then a 60 nm CdS buffer layer was deposited using chemical bath deposition (CBD). This was followed by sputtering of a 30 nm ZnO layer and a 350 nm ITO layer as transparent conductive oxide (TCO) layers. As the last step, a

Directional light beams by design from electrically driven elliptical slit antennas

• Shuiyan Cao,
• Eric Le Moal,
• Quanbo Jiang,
• Aurélien Drezet,
• Serge Huant,
• Jean-Paul Hugonin,
• Gérald Dujardin and
• Elizabeth Boer-Duchemin

Beilstein J. Nanotechnol. 2018, 9, 2361–2371, doi:10.3762/bjnano.9.221

• , conducting indium tin oxide (ITO) layer (purchased from SOLEMS, Palaiseau, France). ITO is used to electrically connect the inner gold area delineated by the elliptical slit to the rest of the gold film as is required for applying the tip–sample bias voltage for the STM measurements. The elliptical slits are

Performance analysis of rigorous coupled-wave analysis and its integration in a coupled modeling approach for optical simulation of complete heterojunction silicon solar cells

• Ziga Lokar,
• Benjamin Lipovsek,
• Marko Topic and
• Janez Krc

Beilstein J. Nanotechnol. 2018, 9, 2315–2329, doi:10.3762/bjnano.9.216

• (EVA) encapsulation (Figure 3). The front of the basic solar cell structure consists of transparent conductive oxide (e.g., indium tin oxide (ITO)), a thin p-doped and intrinsic amorphous silicon (a-Si:H) layer for electrical passivation, a slightly n-doped crystalline Si (c-Si) wafer (absorber), and

• an intrinsic and n-doped a-Si:H stack; the rear consists of an ITO/Al contact. The textures can be applied to the front and/or rear part of the wafer. In our model, thin layers follow the applied wafer textures. The complex refractive indices of the layers used as input for optical simulations were

• . Results and Discussion RCWA accuracy analysis of partial cell structure The applicability and accuracy of RCWA for solar cell simulations was tested first on a simpler structure – the front part of the analyzed solar cell (EVA/ITO/p/i a-si:H/c-Si) with the inverted pyramid texture (as shown in Figure 4

A scanning probe microscopy study of nanostructured TiO₂/poly(3-hexylthiophene) hybrid heterojunctions for photovoltaic applications

• Laurie Letertre,
• Roland Roche,
• Olivier Douhéret,
• Hailu G. Kassa,
• Denis Mariolle,
• Nicolas Chevalier,
• Łukasz Borowik,
• Philippe Dumas,
• Benjamin Grévin,
• Roberto Lazzaroni and
• Philippe Leclère

Beilstein J. Nanotechnol. 2018, 9, 2087–2096, doi:10.3762/bjnano.9.197

• bias, while fixing the growth temperature to 450 °C and the tilt angle between the substrate and the cathode axis to 60°. Anatase TiO2 layers with a 200 nm thick nanocolumnar morphology have been deposited on 85 nm-thick ITO-coated glass substrates (Naranjo B.V., sheet resistance of 15 Ω·sq). The

• detection range within 100 fA to 1 µA. Silicon tips coated with a PtIr conductive alloy (PPP-CONTPt from Nanosensors) were used. The tip and the back-contact were connected while the sample was locally irradiated from the bottom (through the patterned ITO–glass substrates) under AM 1.5 calibrated white

• deposited over a grounded ITO electrode, where the nanocolumns of TiO2 are assembled in clumps with a width of several hundred nm. Figure 2b shows the corresponding KPFM Vcpd image. Figure 2c presents the three-dimensional display of Figure 2a, where the colour scale refers to the Vcpd signal of Figure 2b

Photoluminescence of CdSe/ZnS quantum dots in nematic liquid crystals in electric fields

• Margarita A. Kurochkina,
• Elena A. Konshina and
• Daria Khmelevskaia

Beilstein J. Nanotechnol. 2018, 9, 1544–1549, doi:10.3762/bjnano.9.145

• I/I0 (a) and decay times t/t0 (b) of the QD photoluminescence as functions of the electric field strength applied to LC cells with a planar (blue circles) and vertical (red circles) alignment. The insert shows the structure of a LC cell: 1 - quartz substrates, 2 - ITO electrode, 3 - orienting layer

Formation and development of nanometer-sized cybotactic clusters in bent-core nematic liquid crystalline compounds

• Yuri P. Panarin,
• Sithara P. Sreenilayam,
• Jagdish K. Vij,
• Anne Lehmann and
• Carsten Tschierske

Beilstein J. Nanotechnol. 2018, 9, 1288–1296, doi:10.3762/bjnano.9.121

• GmbH, Germany). The sample cells for dielectric measurements are constructed from glass substrates coated with indium tin oxide (ITO) with low sheet resistance (20 Ω/ ). This shifts the parasitic dielectric peak to a higher frequency due to the capacitance of the cell in series with the finite

• resistance of the ITO. The capacitance of the empty cell was measured. These measurements on the aligned liquid crystalline sample were carried out under cooling from 110 to 60 °C. The temperature was varied in steps of 0.5 °C under the application of a weak voltage of 0.1 V. The temperature of the cell with

• thickness d = 7.8 µm. Three relaxation peaks are observed in the nematic phase during cooling from the isotropic state. The highest frequency peak (P3) is found to be temperature independent and is assignable to the finite resistance of the ITO-coated electrodes in series with their cell capacitance. The

A novel copper precursor for electron beam induced deposition

• Caspar Haverkamp,
• George Sarau,
• Mikhail N. Polyakov,
• Ivo Utke,
• Marcos V. Puydinger dos Santos,
• Silke Christiansen and
• Katja Höflich

Beilstein J. Nanotechnol. 2018, 9, 1220–1227, doi:10.3762/bjnano.9.113

• a 50 nm layer of ITO. A brute force algorithm compared the obtained spectra to analytically calculated spectra of the corresponding multilayer system by scanning the n-k-space for the FEBID material. Thereby, the optical constants were retrieved [20]. Figure 3a and Figure 3b show the values for the

• pieces with a native oxide layer and glass cover slips with an optically characterized layer of 50 nm indium tin oxide (ITO) were used. EDX measurements were carried out in a Tescan LYRA 3 dual beam microscope equipped with an EDX Quantax system of Bruker. Spectra were taking in spot mode at an

• accelerating voltage of 5 kV and 1 nA beam current. To avoid spurious signals from the substrate a deposit of 400 nm thickness onto silicon was used for quantification. Further EDX measurements were carried out on the optically characterized copper deposits on ITO coated glass (see Supporting Information File

Electrodeposition of reduced graphene oxide with chitosan based on the coordination deposition method

• Mingyang Liu,
• Yanjun Chen,
• Chaoran Qin,
• Zheng Zhang,
• Shuai Ma,
• Xiuru Cai,
• Xueqian Li and
• Yifeng Wang

Beilstein J. Nanotechnol. 2018, 9, 1200–1210, doi:10.3762/bjnano.9.111

• indium tin oxide (ITO) electrode through the codeposition of rGO and chitosan [21]. The main limitation of this method is that graphene disperses poorly and has poor colloidal stability in most common solvents [22][23]. In our previous experiments, it was found that the unmodified rGO was very difficult