Fabrication of silver nanoisland films by pulsed laser deposition for surface-enhanced Raman spectroscopy

• Bogusław Budner,
• Mariusz Kuźma,
• Barbara Nasiłowska,
• Bartosz Bartosewicz,
• Malwina Liszewska and
• Bartłomiej J. Jankiewicz

Beilstein J. Nanotechnol. 2019, 10, 882–893, doi:10.3762/bjnano.10.89

• . A very sharp edge for height (layer thickness) measurements was obtained in this way due to the low adhesion of the silver films to the Si substrate. AFM measurements were carried out in three different areas on the surface of each sample. Then for each sample ten AFM cross sections from different

• the Si substrate by laser ablation (PLD) registered in a wide range of binding energy, and Ag 3d and Ag-MNN Auger band registered in a narrow range of energy (insert). Reflectance spectra of fabricated Ag nanoisland films: a) for samples with the layers deposited at a laser fluence of 5.56 ± 0.37J/cm2

On the transformation of “zincone”-like into porous ZnO thin films from sub-saturated plasma enhanced atomic layer deposition

• Alberto Perrotta,
• Julian Pilz,
• Stefan Pachmajer,
• Antonella Milella and
• Anna Maria Coclite

Beilstein J. Nanotechnol. 2019, 10, 746–759, doi:10.3762/bjnano.10.74

• (Figure 4b) to 4 s (Figure 4c). Because of the Si substrate, the Si 200 peak is visible in all diffractograms. Starting with the spectra of the pristine Zn-alkoxide layers acquired at 25 °C before calcination (dark blue lines in Figure 4a–c), no ZnO peaks are observed for the sample deposited with 1 s

Temperature-dependent Raman spectroscopy and sensor applications of PtSe₂ nanosheets synthesized by wet chemistry

• Mahendra S. Pawar and
• Dattatray J. Late

Beilstein J. Nanotechnol. 2019, 10, 467–474, doi:10.3762/bjnano.10.46

• onto a Si substrate and heated at 100 °C on a hot plate. After complete evaporation, the substrate was annealed in a chemical vapour deposition system at 500 °C in argon gas atmosphere for 5 h. Supporting Information File 1, Figure S1 shows the schematic of the PtSe2 nanosheet synthesis steps. Sensor

• carried out at ambient pressure and room temperature. Results and Discussion Structural characterization The structural characterization was carried out using X-ray diffraction (XRD) and Raman spectroscopy. Figure 1a shows the typical XRD pattern of the as-prepared sample deposited on a Si substrate. XRD

• -synthesized PtSe2 sample. The X-ray photoelectron spectroscopy (XPS) spectra of the Pt 4f and Se 3d regions acquired on a PtSe2 nanosheet sample were carried out on a film deposited on the Si substrate. The Figure 4a represents the fitted spectrum for Pt 4f7/2 and Pt 4f5/2 with binding energy 72.55 eV and

Sub-wavelength waveguide properties of 1D and surface-functionalized SnO₂ nanostructures of various morphologies

• Venkataramana Bonu,
• Binaya Kumar Sahu,
• Arindam Das,
• Sankarakumar Amirthapandian,
• Sandip Dhara and
• Harish C. Barshilia

Beilstein J. Nanotechnol. 2019, 10, 379–388, doi:10.3762/bjnano.10.37

• thickness was coated on the Si (100) substrate by using the thermal evaporation (Hind Vacuum, India) technique under a base pressure of 5.0 × 10−6 mbar. The Si substrate coated with the Au film, used as a catalyst in the growth of SnO2 NWs, was placed 10 mm away from the precursor material in the Al2O3 boat

• in RGB format and spectral response (gamma) and light intensity corrections were applied. Results and Discussion Growth and characterization FESEM images of the NWs with different morphology are shown (Figure 1). Densely packed square-shaped NWs grew on the Si substrate (Figure 1a) at a temperature

• the cylindrical-shaped NWs densely grown on the Si substrate at a temperature of 1000 °C. Similar to the square-shaped NWs, the surface appears to be smooth and the Au nanoparticle at the tip supports the VLS mechanism (inset Figure 1b) [24][25]. The length and width of the cylindrical-shaped NWs are

Geometrical optimisation of core–shell nanowire arrays for enhanced absorption in thin crystalline silicon heterojunction solar cells

• Robin Vismara,
• Olindo Isabella,
• Andrea Ingenito,
• Fai Tong Si and
• Miro Zeman

Beilstein J. Nanotechnol. 2019, 10, 322–331, doi:10.3762/bjnano.10.31

• performance over a wide range of angles of the incidence light, up to 60°. Scanning electron microscopy pictures of (a) bare and (b) coated nanowires on the c-Si substrate. In the inset of (b), the enlargement of a single c-Si nanowire wrapped with supporting layers is depicted, showing excellent coating

Site-controlled formation of single Si nanocrystals in a buried SiO₂ matrix using ion beam mixing

• Xiaomo Xu,
• Thomas Prüfer,
• Daniel Wolf,
• Hans-Jürgen Engelmann,
• Lothar Bischoff,
• René Hübner,
• Karl-Heinz Heinig,
• Wolfhard Möller,
• Stefan Facsko,
• Johannes von Borany and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2018, 9, 2883–2892, doi:10.3762/bjnano.9.267

• , ΔE = 5 eV) as ISi. We obtain I0 by recording an object-free TEM image in vacuum using the same imaging parameters as for the EFTEM image. In order to determine d, we additionally record a zero-loss filtered image in the Si substrate region, which can be expressed by IZL = I0exp(−d/λin) with λin the

• total MFPL for 300 keV electrons in Si. Using λin = 180 nm for 300 keV electrons [25] we can calculate the thickness d of the TEM lamella in the Si substrate. By inserting the thickness d in Equation 8 one can determine λSi = 500 nm. The knowledge of this value allows us to convert the Si-plasmon-loss

• of parameters found (170 Si+ nm−2, 1323 K, 120 s). Static TRIDYN-based simulation of the mixing efficiency for broad (a) and focused (b) beam irradiation. The graph in (a) shows the mixing efficiency of a 25 keV Ne+ broad beam on a layer stack of 25 nm Si and 6.5 nm SiO2 on a Si substrate. The

Au–Si plasmonic platforms: synthesis, structure and FDTD simulations

• Anna Gapska,
• Marcin Łapiński,
• Paweł Syty,
• Wojciech Sadowski,
• Józef E. Sienkiewicz and
• Barbara Kościelska

Beilstein J. Nanotechnol. 2018, 9, 2599–2608, doi:10.3762/bjnano.9.241

• on the sample. The time envelope of the pulse was set to be rectangular. It provided the single wavelength of 395 nm (which is the off-resonant transition for Si) for exactly 10 fs. The sensor was placed in the zx-plane, 10 nm above the Si substrate. The second simulation, by using FDTD and discrete

Magnetism and magnetoresistance of single Ni–Cu alloy nanowires

• Andreea Costas,
• Camelia Florica,
• Elena Matei,
• Maria Eugenia Toimil-Molares,
• Ionel Stavarache,
• Andrei Kuncser,
• Victor Kuncser and
• Ionut Enculescu

Beilstein J. Nanotechnol. 2018, 9, 2345–2355, doi:10.3762/bjnano.9.219

• obtained from single nanowire measurements is shown in the upper inset. (a) Ni–Cu alloy nanowires placed on SiO2/Si substrates between the interdigitated metallic electrodes obtained by photolithography; (b) alignment of the SiO2/Si substrate with the sample holder of the microscope; (c) the sample covered

Optimization of the optical coupling in nanowire-based integrated photonic platforms by FDTD simulation

• Nan Guan,
• Andrey Babichev,
• Martin Foldyna,
• Dmitry Denisov,
• François H. Julien and
• Maria Tchernycheva

Beilstein J. Nanotechnol. 2018, 9, 2248–2254, doi:10.3762/bjnano.9.209

• a diameter of 1 µm. It is positioned on a SiO2 layer on top of a Si substrate. The thickness of the SiO2 layer is varied to find the minimum thickness necessary to avoid light coupling from the platform components to the absorbing Si substrate. Following the experimental realization of [30], an

• etching after the metallic contact deposition without any damage of the device, and the SiNx waveguide can be fabricated after this etching step. Taking into account that the Si substrate is strongly absorbing at 400 nm, a simulation with different thicknesses of the SiO2 layer was done to evaluate the

• impact of the SiO2 spacer thickness on the losses due to the light coupling and absorption in Si. The results demonstrate that for a SiO2 thickness larger than 300 nm, the absorption of the Si substrate becomes negligible due to total internal reflection at the GaN/SiO2 interface and the transmission of

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

• Noel Kennedy,
• Ray Duffy,
• Luke Eaton,
• Dan O’Connell,
• Scott Monaghan,
• Shane Garvey,
• James Connolly,
• Chris Hatem,
• Justin D. Holmes and
• Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

• the Si substrate. MLD-doped 66 nm SOI was further examined using secondary ion mass spectrometry (SIMS) to attain a more detailed view of total dopant distribution in the substrate, which is complementary to previous measurements of active carrier concentrations through ECV. Data shown in Figure 7

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si_1−xGe_x and Si layers

• Richard Daubriac,
• Emmanuel Scheid,
• Hiba Rizk,
• Richard Monflier,
• Sylvain Joblot,
• Rémi Beneyton,
• Pablo Acosta Alba,
• Sébastien Kerdilès and
• Filadelfo Cristiano

Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

• etching time of a 20 nm thick Si0.73Ge0.27 boron-doped layer (1018 cm−3) grown on top of a Si substrate. TEM images show a clear decrease of the layer thickness, while all the techniques are in mutual agreement, therefore validating ellipsometry as a unique thickness characterization method for the

• on top of a Si substrate. We first describe the Van der Pauw structure and the conventional Hall effect setup. Then we will present the differential Hall effect measurements and calculations and we will discuss the limitations of the technique. Van der Pauw structure and Hall effect measurements on

Synthesis of hafnium nanoparticles and hafnium nanoparticle films by gas condensation and energetic deposition

• Irini Michelakaki,
• Nikos Boukos,
• Dimitrios A. Dragatogiannis,
• Spyros Stathopoulos,
• Costas A. Charitidis and
• Dimitris Tsoukalas

Beilstein J. Nanotechnol. 2018, 9, 1868–1880, doi:10.3762/bjnano.9.179

• , several scenarios, such as derformation, fragmentation and implantation of the NPs, are possible [40][43]. In this study we observed partial and complete deformation of the NPs. 3D NTF patterning In order to fabricate 3D NTF patterns, a spin-coated PMMA film on a Si substrate was initially patterned via e

• composed of orthorhombic HfO2 nanocrystallites indicated by arrows exhibiting lattice fringes of d = 0.295 nm corresponding to (101) HfO2 embedded in an amorphous layer. X-ray pattern of hafnium NPs on Si substrate synthesized for different aggregation-zone lengths D = 50, 75 and 100 nm. a) Bright-field

Toward the use of CVD-grown MoS₂ nanosheets as field-emission source

• Geetanjali Deokar,
• Nitul S. Rajput,
• Junjie Li,
• Francis Leonard Deepak,
• Wei Ou-Yang,
• Nicolas Reckinger,
• Carla Bittencourt,
• Jean-Francois Colomer and
• Mustapha Jouiad

Beilstein J. Nanotechnol. 2018, 9, 1686–1694, doi:10.3762/bjnano.9.160

• . Additionally, the FFT pattern as shown in Figure 4e for the yellow squared area in Figure 4d, confirms well-crystallized MoS2 NSs with the c-axis being normal to the NSs. Between, the vertically aligned MoS2 NSs and the SiO2/Si substrate, a layer (marked with “B” in Figure 4a) containing Mo, S and O (37–55 nm

Optical near-field mapping of plasmonic nanostructures prepared by nanosphere lithography

• Gitanjali Kolhatkar,
• Alexandre Merlen,
• Jiawei Zhang,
• Chahinez Dab,
• Gregory Q. Wallace,
• François Lagugné-Labarthet and
• Andreas Ruediger

Beilstein J. Nanotechnol. 2018, 9, 1536–1543, doi:10.3762/bjnano.9.144

• (gold or silver) nanotriangles deposited on a glass or Si substrate, are of high interest to study plasmonics, and more specifically localised surface plasmon resonance (LSPR) [23][24]. Indeed, their geometry and their metallic nature result in the spatial confinement of the electric field at their

Magnetic characterization of cobalt nanowires and square nanorings fabricated by focused electron beam induced deposition

• Federico Venturi,
• Gian Carlo Gazzadi,
• Amir H. Tavabi,
• Alberto Rota,
• Rafal E. Dunin-Borkowski and
• Stefano Frabboni

Beilstein J. Nanotechnol. 2018, 9, 1040–1049, doi:10.3762/bjnano.9.97

• secondary electron generation by the primary beam interacting with the Si substrate, which is thicker and denser than the C substrate. Energy-dispersive X-ray spectroscopy (EDX) provided measured compositions that depended on the substrate and deposition energy. A spectrum recorded from the bare substrate

• state is higher than that applied during horseshoe state observation. In order to validate the L-TEM results obtained at remanence and to measure the three-dimensional (3D) topography of the sample, additional analyses were carried out using AFM and MFM. A square nanoring was deposited at 5 keV on a Si

• substrate for MFM analysis. An AFM topography image is shown in Figure 4a, while a height profile taken across the middle of the nanoring is shown in Figure 4b. Both sides have a thickness of ca. 40 nm, a length of 1 μm and a width of ca. 100 nm. A topographic map of the same area is shown in Figure 4c. In

Comparative study of sculptured metallic thin films deposited by oblique angle deposition at different temperatures

• Susann Liedtke,
• Christoph Grüner,
• Jürgen W. Gerlach and
• Bernd Rauschenbach

Beilstein J. Nanotechnol. 2018, 9, 954–962, doi:10.3762/bjnano.9.89

• measured with respect to the substrate normal (see (e) and (g)). Intensity (a.u.) is depicted on a linear scale (see scale bar) and applies for all measured in-plane pole figures ((e)–(h)). Schematic illustration of a tilted Al column deposited on a thermally oxidized Si substrate at an oblique angle θ

Effect of annealing treatments on CeO₂ grown on TiN and Si substrates by atomic layer deposition

• Silvia Vangelista,
• Rossella Piagge,
• Satu Ek and
• Alessio Lamperti

Beilstein J. Nanotechnol. 2018, 9, 890–899, doi:10.3762/bjnano.9.83

• the signal connected with OH− content progressively decreases (not shown). This demonstrates that ceria film deposited on SiO2/Si substrate can sustain annealing at high temperatures up to 900 °C without major concerns regarding the onset of interdiffusion and interface stability. The cross-sectional

• annealing induces severe oxidation on TiN with a broadening of the interface with CeO2 and potential local mixing, which limit its integration in a technological process. On the contrary, the high stability of the Si substrate (apart from its oxidation at the interface) allows to increase the annealing

Tuning adhesion forces between functionalized gold colloidal nanoparticles and silicon AFM tips: role of ligands and capillary forces

• Sven Oras,
• Sergei Vlassov,
• Marta Berholts,
• Rünno Lõhmus and
• Karine Mougin

Beilstein J. Nanotechnol. 2018, 9, 660–670, doi:10.3762/bjnano.9.61

• in a PeakForce QNM Mode. Figure 2 displays AFM images of Au NPs topography and adhesion along with typical force–distance curves for Au NPs and Si substrate. Results show that adhesion force values are highly modulated by the nature of the tail group of the NPs thin coating as well as the NPs

Green synthesis of fluorescent carbon dots from spices for in vitro imaging and tumour cell growth inhibition

• Nagamalai Vasimalai,
• Vânia Vilas-Boas,
• Juan Gallo,
• María de Fátima Cerqueira,
• Mario Menéndez-Miranda,
• José Manuel Costa-Fernández,
• Lorena Diéguez,
• Begoña Espiña and
• María Teresa Fernández-Argüelles

Beilstein J. Nanotechnol. 2018, 9, 530–544, doi:10.3762/bjnano.9.51

• (PanAnalytical B.V, EA Almelo, The Netherlands) and Cu Kα radiation (λ = 0.15418 nm), and the samples were prepared on a Si substrate. Raman spectroscopy measurements were performed in Witec Alpha 300R confocal Raman Microscopy system with a 50× objective (WITec Wissenschaftliche Instrumente and Technologie GmbH

Engineering of oriented carbon nanotubes in composite materials

• Razieh Beigmoradi,
• Abdolreza Samimi and
• Davod Mohebbi-Kalhori

Beilstein J. Nanotechnol. 2018, 9, 415–435, doi:10.3762/bjnano.9.41

• of a wide range of materials, spraying can be combined with other methods to fabricate composite materials. In this method, a sheet of CNTs is produced by chemical vapor deposition (CVD) on a SiO2/Si substrate that is coated with a very thin layer of iron as a catalyst. The CNT rows have been grown

• solution and a nozzle to control the N2 flow direction on the Si substrate. SEM image of aligned CNTs is reproduced with permission from [95], copyright 2005 American Institute of Physics. Schematic structure of a liquid crystal (blue ellipsoids) and CNT (black cylinders) rearrangement under an external

Periodic structures on liquid-phase smectic A, nematic and isotropic free surfaces

• Anna N. Bagdinova,
• Evgeny I. Demikhov,
• Nataliya G. Borisenko,
• Sergei M. Tolokonnikov,
• Gennadii V. Mishakov and
• Andrei V. Sharkov

Beilstein J. Nanotechnol. 2018, 9, 342–352, doi:10.3762/bjnano.9.34

• temperature (a) and its cross-section (b). Periodic structure formation after Cry–SmA phase transition at room temperature. Topographical AFM (a) and SNOM (b) SmA droplet edge images on Si substrate, AFM and SNOM cross-sections (c) and (d). Periodic SmA structure formation at room temperature after cooling

• from the nematic phase. Topographical (a) and SNOM (b) images of SmA on Si substrate droplet edge, cross sections of both images (c) and (d). Equilibrium surface state of SmA phase after 30 minutes of relaxation at room temperature. SNOM image of SmA on Si substrate droplet edge at room temperature (a

• ), optical image cross-section (b). Periodic structure formation in the nematic phase at 38 °С. Topographical (a) and optical (b) SNOM image of SmA on Si substrate, cross-sections of both images (c) and (d). SNOM image of LC film on the Si substrate at 46 °С (isotropic liquid). Schematic illustration of

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

• Alexey D. Bolshakov,
• Alexey M. Mozharov,
• Georgiy A. Sapunov,
• Igor V. Shtrom,
• Nickolay V. Sibirev,
• Vladimir V. Fedorov,
• Evgeniy V. Ubyivovk,
• Maria Tchernycheva,
• George E. Cirlin and
• Ivan S. Mukhin

Beilstein J. Nanotechnol. 2018, 9, 146–154, doi:10.3762/bjnano.9.17

• ]. The fabrication of a simple SC based on GaN NWs on Si(111) can be obtained via proper NW doping and formation of a p–n junction at Si substrate–GaN NW interface. Recently it has been theoretically demonstrated that optimization of the doping level and NW array morphology can lead to a power conversion

Comparative study of post-growth annealing of Cu(hfac)₂, Co₂(CO)₈ and Me₂Au(acac) metal precursors deposited by FEBID

• Marcos V. Puydinger dos Santos,
• Aleksandra Szkudlarek,
• Artur Rydosz,
• Carlos Guerra-Nuñez,
• Fanny Béron,
• Kleber R. Pirota,
• Stanislav Moshkalev,
• José Alexandre Diniz and
• Ivo Utke

Beilstein J. Nanotechnol. 2018, 9, 91–101, doi:10.3762/bjnano.9.11

• spectrum extracted far from the deposition area (see Supporting Information File 1). Finally, the SAMx STRATAGem software for thin film analysis was used to calculate the atomic composition of the FEBID deposits. In this way the EDX signal contribution from both the Si substrate and the 200 nm thick SiO2

• resistance reduction of three orders of magnitude. The resulting material comprises pure nucleated Au grains with around 16 nm average size. Optical microscopy images showing the 200 nm SiO2/Si substrate and gold electrodes together with (a) 35 nm thick Co–C, (b) 50 nm thick Cu–C and (c) 50 nm thick Au–C FEB

• signal from the chamber, thus highlighting the efficiency of the H2-based purification method. Silicon and oxygen signals originate from the SiO2/Si substrate. (c) Optical (top) and scanning electron (bottom) microscopies of both as-deposited and annealed at 360 °C Au–C FEBID material. This annealing

Material discrimination and mixture ratio estimation in nanocomposites via harmonic atomic force microscopy

• Weijie Zhang,
• Yuhang Chen,
• Xicheng Xia and
• Jiaru Chu

Beilstein J. Nanotechnol. 2017, 8, 2771–2780, doi:10.3762/bjnano.8.276

• are found in the histograms demonstrated in Figure 7d. The peaks are centered at 505, 559 and 665 pm, which correspond to SiO2 NPs, Si substrate and PS NPs, respectively. The three materials can be clearly separated in the harmonic amplitude images. However, larger harmonic amplitudes do not occur for

Dry adhesives from carbon nanofibers grown in an open ethanol flame

• Christian Lutz,
• Julia Syurik,
• C. N. Shyam Kumar,
• Christian Kübel,
• Michael Bruns and
• Hendrik Hölscher

Beilstein J. Nanotechnol. 2017, 8, 2719–2728, doi:10.3762/bjnano.8.271

• its pure state before growth [35]. Based on our observations, we conclude that the 60 nm copper layer on the Si substrate plays an important role for the reduction of the nickel catalysts because experiments with nickel on pure Si or SiO2 substrates without copper show no or diminishing CNF growth