Gas-assisted silver deposition with a focused electron beam

• Luisa Berger,
• Katarzyna Madajska,
• Iwona B. Szymanska,
• Katja Höflich,
• Mikhail N. Polyakov,
• Jakub Jurczyk,
• Carlos Guerra-Nuñez and
• Ivo Utke

Beilstein J. Nanotechnol. 2018, 9, 224–232, doi:10.3762/bjnano.9.24

• substrate heating prevented condensation yet assured sufficient adsorbate coverage. Figure 1a and Figure 1b show scanning electron micrographs, with higher magnification inset images, of a spot and line deposit (lineXENOS) on oxidized silicon (200 nm SiO2/Si) written with electron doses of 0.15 µC and 8.3

• determined with the help of four point probe resistance measurements. A FEBID line (lineTV) was deposited with 20 kV and 0.7 nA with an electron dose of 0.14 pC/µm to connect four gold electrodes on an insulating SiO2 substrate as shown in Figure 5a. The high magnification image in Figure 5b displays the

• of amorphous carbon and about 1000 times larger than that of pure silver. Scanning electron micrographs of deposits from AgO2CC2F5 on bulk 200 nm SiO2/Si using a 25 keV/0.25 nA primary electron beam. (a) Spot deposit and close up of central area, (b) line deposit lineXENOS and close up of central

Atomic layer deposition and properties of ZrO₂/Fe₂O₃ thin films

• Kristjan Kalam,
• Helina Seemen,
• Peeter Ritslaid,
• Mihkel Rähn,
• Aile Tamm,
• Kaupo Kukli,
• Aarne Kasikov,
• Joosep Link,
• Raivo Stern,
• Salvador Dueñas,
• Helena Castán and
• Héctor García

Beilstein J. Nanotechnol. 2018, 9, 119–128, doi:10.3762/bjnano.9.14

• cleaning and before placing the samples in a reactor, a SiO2 layer of a few nanometers thick grew on the sample because of contact with surrounding air. Selected samples on Si(100) were annealed at 850 °C and 1000 °C in air for 15 and 10 minutes, respectively. For electrical measurements, the films

Comparative study of post-growth annealing of Cu(hfac)₂, Co₂(CO)₈ and Me₂Au(acac) metal precursors deposited by FEBID

• Marcos V. Puydinger dos Santos,
• Aleksandra Szkudlarek,
• Artur Rydosz,
• Carlos Guerra-Nuñez,
• Fanny Béron,
• Kleber R. Pirota,
• Stanislav Moshkalev,
• José Alexandre Diniz and
• Ivo Utke

Beilstein J. Nanotechnol. 2018, 9, 91–101, doi:10.3762/bjnano.9.11

• thick CuxFyCzOz and 50 nm thick AuxCyOz depositions. Each defined a rectangular pattern of 20 × 5 μm2 onto predefined 100 nm thick Au electrodes. These electrodes were obtained by standard UV lithography on phosphorus-doped Si wafers (8 mΩ·cm) with a 200 nm thick SiO2 layer for electrodes isolation. The

• spectrum extracted far from the deposition area (see Supporting Information File 1). Finally, the SAMx STRATAGem software for thin film analysis was used to calculate the atomic composition of the FEBID deposits. In this way the EDX signal contribution from both the Si substrate and the 200 nm thick SiO2

• resistance reduction of three orders of magnitude. The resulting material comprises pure nucleated Au grains with around 16 nm average size. Optical microscopy images showing the 200 nm SiO2/Si substrate and gold electrodes together with (a) 35 nm thick Co–C, (b) 50 nm thick Cu–C and (c) 50 nm thick Au–C FEB

Growth model and structure evolution of Ag layers deposited on Ge films

• Arkadiusz Ciesielski,
• Lukasz Skowronski,
• Ewa Górecka,
• Jakub Kierdaszuk and
• Tomasz Szoplik

Beilstein J. Nanotechnol. 2018, 9, 66–76, doi:10.3762/bjnano.9.9

• of Warsaw, Department of Chemistry, Pasteura 1 str., 02-093 Warsaw, Poland 10.3762/bjnano.9.9 Abstract We investigated the crystallinity and optical parameters of silver layers of 10–35 nm thickness as a function 2–10 nm thick Ge wetting films deposited on SiO2 substrates. X-ray reflectometry (XRR

• ) and X-ray diffraction (XRD) measurements proved that segregation of germanium into the surface of the silver film is a result of the gradient growth of silver crystals. The free energy of Ge atoms is reduced by their migration from boundaries of larger grains at the Ag/SiO2 interface to boundaries of

• surface. With the increased number of grains, the surface of the grain boundaries and volume of voids also increases. As hypothesized in [4], Ge atoms located in the silver grain boundaries or in the voids have lower free enthalpy than Ge atoms at the SiO2/Ag interface. The increased number of grain

Review on optofluidic microreactors for artificial photosynthesis

• Xiaowen Huang,
• Jianchun Wang,
• Tenghao Li,
• Jianmei Wang,
• Min Xu,
• Weixing Yu,
• Abdel El Abed and
• Xuming Zhang

Beilstein J. Nanotechnol. 2018, 9, 30–41, doi:10.3762/bjnano.9.5

• splitting and CO2 reduction [80], but significant progress had already been made before it was combined with the optofluidics [81]. Park et al. developed CdS quantum-dot-sensitized TiO2 nanotube arrays for the photo-regeneration of nicotinamide cofactors [82]. They also used SiO2-supported CdS quantum dots

Material discrimination and mixture ratio estimation in nanocomposites via harmonic atomic force microscopy

• Weijie Zhang,
• Yuhang Chen,
• Xicheng Xia and
• Jiaru Chu

Beilstein J. Nanotechnol. 2017, 8, 2771–2780, doi:10.3762/bjnano.8.276

• were prepared by mixing PS and SiO2 NPs and then deposited on a silicon substrate. The harmonic AFM results are presented in Figure 7. For this specimen, the three different materials, PS, SiO2 and Si can be distinguished even from the topography because the diameters of the PS and SiO2 NPs are

• obviously different (see Figure 7a). Their nominal diameters are 300 ± 7.5 nm and 100 ± 2.5 nm, respectively. From Figure 7b, the amplitudes for the two materials show a distinguishable difference. The harmonic amplitude on the PS NPs is smaller than that on the SiO2 NPs. Three amplitude distribution peaks

• are found in the histograms demonstrated in Figure 7d. The peaks are centered at 505, 559 and 665 pm, which correspond to SiO2 NPs, Si substrate and PS NPs, respectively. The three materials can be clearly separated in the harmonic amplitude images. However, larger harmonic amplitudes do not occur for

The rational design of a Au(I) precursor for focused electron beam induced deposition

• Ali Marashdeh,
• Thiadrik Tiesma,
• Niels J. C. van Velzen,
• Sjoerd Harder,
• Remco W. A. Havenith,
• Jeff T. M. De Hosson and
• Willem F. van Dorp

Beilstein J. Nanotechnol. 2017, 8, 2753–2765, doi:10.3762/bjnano.8.274

• -established technique for modifying samples on the nanometer scale. Depending on the precursor type it is possible to deposit metals (e.g., Co [7][8], Fe [9][10], Au [11][12], Pt [13][14]), insulators (e.g., SiOx [15]) and alloys (e.g., AuAg and AuPt [4]). Materials such as Si, SiO2, Si3N4, Cr, Ti and TaN can

Dry adhesives from carbon nanofibers grown in an open ethanol flame

• Christian Lutz,
• Julia Syurik,
• C. N. Shyam Kumar,
• Christian Kübel,
• Michael Bruns and
• Hendrik Hölscher

Beilstein J. Nanotechnol. 2017, 8, 2719–2728, doi:10.3762/bjnano.8.271

• from force–distance curves measured with an AFM (Dimension Icon, Bruker). In order to have a defined contact, a 20 μm SiO2 sphere was glued to the end of a tipless silicon cantilever (All In One-TL from BudgetSensors) using the approach of Mak and co-workers [33]. We confirmed by SEM that no glue was

• left on the top of the SiO2 sphere (see the insert in Figure 7 below). For the adhesion measurements a constant ramp rate of 1.5 μm/s was applied (adhesion measurement with ramp rates between 0.2 and 8 μm/s showed similar results). The spring constant of the cantilever was determined to 7.74 N/m with

• its pure state before growth [35]. Based on our observations, we conclude that the 60 nm copper layer on the Si substrate plays an important role for the reduction of the nickel catalysts because experiments with nickel on pure Si or SiO2 substrates without copper show no or diminishing CNF growth

Interface conditions of roughness-induced superoleophilic and superoleophobic surfaces immersed in hexadecane and ethylene glycol

• Yifan Li,
• Yunlu Pan and
• Xuezeng Zhao

Beilstein J. Nanotechnol. 2017, 8, 2504–2514, doi:10.3762/bjnano.8.250

• surface with Gaussian distribute heights, and reported that slippage is independent of the detailed surface profile, and the degree of slippage enhances as the surface amplitude increases. The Bhushan group [13][21] studied boundary slip on a surface coated with SiO2 particle composites of varying degrees

• . Poly(diallyldimethylammonium chloride) (PDDA, MW = 100,000–200,000, Aladdin) was dissolved in DI water to concentrations of 15 and 50 mg·mL−1. SiO2 nanoparticles with a diameter of 7 nm (AEROSIL RX 50, Evonik Industries) were dispersed into acetone (Fisher Scientific) at various concentrations (10 to

• coated (thickness ca. 200 nm). Second, the SiO2 suspension (10 to 30 mg·mL−1, 2 mL) was spray coated (thickness ca. 200 to 350 nm). Third, a second PDDA layer was deposited (15 mg·mL−1, 2 mL, thickness ca. 50 nm). After this, the samples were annealed in an oven at 140 °C for 1 h. Finally, to form the

Laser-assisted fabrication of gold nanoparticle-composed structures embedded in borosilicate glass

• Nikolay Nedyalkov,
• Mihaela Koleva,
• Nadya Stankova,
• Rosen Nikov,
• Mitsuhiro Terakawa,
• Yasutaka Nakajima,
• Lyubomir Aleksandrov and
• Reni Iordanova

Beilstein J. Nanotechnol. 2017, 8, 2454–2463, doi:10.3762/bjnano.8.244

• . This type of glass in combination with gold nanoparticles has not been considered in previous studies, but is of considerable interest regarding the design of high-quality optical elements. Experimental The material of interest was borosilicate glass with composition (in wt %) as follows: 50% SiO2, 20

Strategy to discover full-length amyloid-beta peptide ligands using high-efficiency microarray technology

• Clelia Galati,
• Natalia Spinella,
• Lucio Renna,
• Danilo Milardi,
• Francesco Attanasio,
• Michele Francesco Maria Sciacca and
• Corrado Bongiorno

Beilstein J. Nanotechnol. 2017, 8, 2446–2453, doi:10.3762/bjnano.8.243

• controlled rate in order to reproducibly grow layers of silicon oxide of a defined thickness. Thermal growth allows high-quality SiO2 films to be obtained with very low auto-fluorescence and very low contamination. The wafers were then cut in pieces to the exact dimensions of conventional microscope slides

Comparing postdeposition reactions of electrons and radicals with Pt nanostructures created by focused electron beam induced deposition

• Julie A. Spencer,
• Michael Barclay,
• Miranda J. Gallagher,
• Robert Winkler,
• Ilyas Unlu,
• Yung-Chien Wu,
• Harald Plank,
• Lisa McElwee-White and
• D. Howard Fairbrother

Beilstein J. Nanotechnol. 2017, 8, 2410–2424, doi:10.3762/bjnano.8.240

• , Si/Mo multilayer mirror substrates [47] were used for most depositions, although highly ordered pyrolytical graphite (HOPG) and SiO2 substrates were used for a few depositions. The Ru-capped, Si/Mo multilayer mirror substrate was preferred due to the smoothness and ease with which deposits could be

Electron beam induced deposition of silacyclohexane and dichlorosilacyclohexane: the role of dissociative ionization and dissociative electron attachment in the deposition process

• Ragesh Kumar T P,
• Sangeetha Hari,
• Krishna K Damodaran,
• Oddur Ingólfsson and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2017, 8, 2376–2388, doi:10.3762/bjnano.8.237

• deposition of SiO2, especially in conjunction with oxidizing agents such as oxygen or water. Specifically such deposits are of interest due to the broad transparency and the high diffractive index of SiO2, but may also be of interest in the fabrication of protective or isolating layers/components [2

• ]. Specifically, FEBID deposition of SiO2 is of interest for the repair of deep ultraviolet (DUV) masks [36], but also for the deposition of transparent nano-optics [37][38][39]. Results and Discussion Deposition from SCH and DCSCH To our knowledge, the precursor molecules SCH and DCSCH have not been used for

• Si/O ratio from DCSCH is 1/2.4 indicating a complete oxidation to SiO2. For SCH this ratio is only 1/1.2 indicating a much more incomplete oxidation. Silicon chlorides are generally very sensitive towards hydrolysis leading to the formation of silicon oxide and hydrochloric acid. We thus anticipate

Increasing the stability of DNA nanostructure templates by atomic layer deposition of Al₂O₃ and its application in imprinting lithography

• Hyojeong Kim,
• Kristin Arbutina,
• Anqin Xu and
• Haitao Liu

Beilstein J. Nanotechnol. 2017, 8, 2363–2375, doi:10.3762/bjnano.8.236

• the exposed substrate through shadow gaps was etched to generate trenches with linewidths of sub-10 nm resolution [32]. By differentiating the adsorption of water between DNA nanostructures and a SiO2 substrate, the rates of HF vapor-phase etching of the SiO2 substrate [33] and of chemical vapor

• deposition of SiO2 and TiO2 on the DNA nanostructures and the substrate [34] were modulated to replicate the patterns of the DNA nanostructures into those of the inorganic oxides. In both cases, the patterns of the nanostructures were transferred in both positive tone and negative tone at room temperature

• . Similarly, DNA nanostructures were also used in the anhydrous HF vapor etching of a SiO2 substrate, producing positive imprints of the DNA nanostructures with sub-10 nm resolution [35]. DNA nanostructures were also converted into carbon nanostructures with shape conservation by atomic layer deposition of

Optical contrast and refractive index of natural van der Waals heterostructure nanosheets of franckeite

• Patricia Gant,
• Foad Ghasemi,
• David Maeso,
• Carmen Munuera,
• Elena López-Elvira,
• Riccardo Frisenda,
• David Pérez De Lara,
• Gabino Rubio-Bollinger,
• Mar Garcia-Hernandez and
• Andres Castellanos-Gomez

Beilstein J. Nanotechnol. 2017, 8, 2357–2362, doi:10.3762/bjnano.8.235

• Gelpak®) carrier substrate and then transferred to a SiO2/Si substrate by means of an all-dry transfer technique [24]. We employed two different nominal SiO2 thicknesses (ca. 90 and ca. 290 nm) to probe the role of the SiO2 thickness on the optical identification process. We selected those thickness

• values because they are the most common SiO2 thicknesses in the research of graphene and other 2D materials. Prior to the study of the optical properties of the franckeite nanosheets, we experimentally verify the thickness of the SiO2 capping layers of each employed substrate by means of reflectance

• spectroscopy (see the Supporting Information File 1 for more details). Figure 2a shows a transmission-mode optical image of a franckeite flake exfoliated onto the carrier Gelfilm substrate. Figure 2b shows an epi-illumination microscopy image of the same flake after being transferred onto the 292 nm SiO2/Si

Changes of the absorption cross section of Si nanocrystals with temperature and distance

• Michael Greben,
• Petro Khoroshyy,
• Sebastian Gutsch,
• Daniel Hiller,
• Margit Zacharias and
• Jan Valenta

Beilstein J. Nanotechnol. 2017, 8, 2315–2323, doi:10.3762/bjnano.8.231

• silicon, which reveals all advantages of the quantum confinement effect [1], is a promising candidate for the development of a new generation of Si photovoltaic and photonic devices [2]. SiO2-embedded silicon nanocrystals (Si NCs) can be relatively easy integrated into current CMOS technology. In

• controlled. The emission properties such as quantum yield (QY) of such Si NC/SiO2 multilayer (ML) structures were studied as a function of inter-nanocrystal distance, temperature, excitation and emission wavelength [5][6]. However, there is still little knowledge about one of the most crucial optical

• of silicon-rich silicon oxynitride (SRON: SiOxNy) with 4.5 nm thickness and of stoichiometric SiO2 (1, 1.6, 2.2 or 2.8 nm thick) on fused silica substrates by plasma-enhanced chemical vapor deposition (PECVD). On top and below the superlattice stack, 10 nm of SiO2 were deposited as a buffer and

Fabrication of gold-coated PDMS surfaces with arrayed triangular micro/nanopyramids for use as SERS substrates

• Jingran Zhang,
• Yongda Yan,
• Peng Miao and
• Jianxiong Cai

Beilstein J. Nanotechnol. 2017, 8, 2271–2282, doi:10.3762/bjnano.8.227

• concentration of the dye molecule in the SERS and normal Raman measurements, in this case using a 0.25 mol R6G solution on a SiO2 wafer. The SERS enhancement factor for the various micro/nanostructures is between 7.5 × 105 and 6 × 106 for the structured PDMS substrate formed by the method described in the

Comprehensive investigation of the electronic excitation of W(CO)₆ by photoabsorption and theoretical analysis in the energy region from 3.9 to 10.8 eV

• Mónica Mendes,
• Khrystyna Regeta,
• Filipe Ferreira da Silva,
• Nykola C. Jones,
• Søren Vrønning Hoffmann,
• Gustavo García,
• Chantal Daniel and
• Paulo Limão-Vieira

Beilstein J. Nanotechnol. 2017, 8, 2208–2218, doi:10.3762/bjnano.8.220

• initio molecular dynamics simulations of focused electron beam induced deposition (FEBID) precursor molecules adsorbed on fully and partially hydroxylated SiO2 surfaces [24]. Electron-induced reactions in FEBID processes are initiated by low-energy secondary electrons rather than the high-energy primary

Substrate and Mg doping effects in GaAs nanowires

• Perumal Kannappan,
• Nabiha Ben Sedrine,
• Jennifer P. Teixeira,
• Maria R. Soares,
• Bruno P. Falcão,
• Maria R. Correia,
• Nestor Cifuentes,
• Emilson R. Viana,
• Marcus V. B. Moreira,
• Geraldo M. Ribeiro,
• Alfredo G. de Oliveira,
• Juan C. González and
• Joaquim P. Leitão

Beilstein J. Nanotechnol. 2017, 8, 2126–2138, doi:10.3762/bjnano.8.212

• -doped GaAs nanowires, grown on a GaAs(111)B substrate, with approximately constant diameters (≈190 nm) along the axis, onto a heavily doped Si substrate covered by a 300 nm thick SiO2 layer. Standard photolithography methods were used to define several contact lines, with a lateral separation of 3 to 9

• capacitance (C) can be estimated considering a metallic cylinder-plane system from [19]: where L is the length of the FET channel, ε0 the vacuum permittivity, εr = 3.9 the relative dielectric constant of the SiO2 insulator layer, h = 300 nm the thickness of the SiO2 layer, and d the nanowire diameter. From

A comparative study of the nanoscale and macroscale tribological attributes of alumina and stainless steel surfaces immersed in aqueous suspensions of positively or negatively charged nanodiamonds

• Colin K. Curtis,
• Antonin Marek,
• Alex I. Smirnov and
• Jacqueline Krim

Beilstein J. Nanotechnol. 2017, 8, 2045–2059, doi:10.3762/bjnano.8.205

• Figure 4 images do not specifically reveal whether substrate material was removed in a polishing process during immersion as has been clearly documented for gold QCM electrodes in aqueous suspensions of SiO2 [43]. While alumina and SS304 may not be as susceptible to erosion and polishing as gold, NDs

• very high (1011 cm−2) for oxidized nanodiamonds (−ND) on AlN substrates [47]. The data are also consistent with a report on a formation of ND clusters of ca. 23 nm in diameter on SiO2 surfaces exposed to ND dispersions [48]. Clusters of this size are large enough to separate the surfaces employed for

A systematic study of the controlled generation of crystalline iron oxide nanoparticles on graphene using a chemical etching process

• Peter Krauß,
• Jörg Engstler and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2017, 8, 2017–2025, doi:10.3762/bjnano.8.202

• developed, modified etching process using aqueous ammonium persulfate as an etchant [26][27], graphene was transferred onto (i) a SiO2/Si wafer and (ii) a transmission electron microscopy (TEM) grid and characterized using Raman spectroscopy and high-resolution TEM (Figure 1). The Raman spectrum shows the

• -prepared iron oxide nanoparticles on graphene composite material for direct synthesis of carbon nanotubes (CNTs) under CVD conditions. The graphene was transferred onto a SiO2/Si wafer after CVD synthesis on a copper substrate (Figure 6). The copper substrate was etched with a solution of 1 M iron(III

• ) at a flow rate of 10 mL/min. Synthesis of carbon nanotubes Carbon nanotubes were synthesized using water-assisted chemical vapor deposition of ethene (Air Liquide) on SiO2/Si wafers (Silicon Materials) covered with an iron oxide nanoparticle/graphene composite at 875 °C in a hydrogen/argon atmosphere

Advances and challenges in the field of plasma polymer nanoparticles

• Andrei Choukourov,
• Pavel Pleskunov,
• Daniil Nikitin,
• Valerii Titov,
• Artem Shelemin,
• Mykhailo Vaidulych,
• Anna Kuzminova,
• Pavel Solař,
• Jan Hanuš,
• Jaroslav Kousal,
• Ondřej Kylián,
• Danka Slavínská and
• Hynek Biederman

Beilstein J. Nanotechnol. 2017, 8, 2002–2014, doi:10.3762/bjnano.8.200

• addition of oxygen. FTIR and XPS (Figure 8a,b) analyses demonstrate the organosilicon character of the NPs produced without O2 and its gradual transfer to the inorganic state with the addition of O2. The gas phase composition can be optimized to produce nearly stoichiometric SiO2 NPs (Figure 7c), which are

Identifying the nature of surface chemical modification for directed self-assembly of block copolymers

• Laura Evangelio,
• Federico Gramazio,
• Matteo Lorenzoni,
• Michaela Gorgoi,
• Francisco Miguel Espinosa,
• Ricardo García,
• Francesc Pérez-Murano and
• Jordi Fraxedas

Beilstein J. Nanotechnol. 2017, 8, 1972–1981, doi:10.3762/bjnano.8.198

• energy. At higher photon energies, two more lines are identified at about 1841 and 1846 eV binding energies, respectively, that become increasingly dominant for increasing photon energies. The 1841 and 1846 eV features correspond to the buried Si/SiO2 interface. Previous photoemission measurements

• corresponding kinetic energies are about 180 eV and 1920 eV for Si 1s and Si 2p, respectively, and the corresponding inelastic mean free path for electrons are 0.7 nm (Si) and 0.9 nm (SiO2) at 180 eV and 4.1 nm (Si) and 4.9 nm (SiO2) at 1920 eV, respectively [26]. Thus, we can continuously follow the emergence

• located on top of the Si/SiO2 interface, as schematized in Figure 7a, since it is the first feature that appears at the lower photon energy used. In addition, since the feature at 1844 eV exhibits a lower binding energy as compared to the 1846 eV counterpart, it can be assigned to a substoichiometric

Intercalation of Si between MoS₂ layers

• Rik van Bremen,
• Qirong Yao,
• Soumya Banerjee,
• Deniz Cakir,
• Nuri Oncel and
• Harold J. W. Zandvliet

Beilstein J. Nanotechnol. 2017, 8, 1952–1960, doi:10.3762/bjnano.8.196

• occurred. It is very likely that the observed shift is attributed to a change in the position of the Fermi level. It has been shown that the deposition of MoS2 on a SiO2 substrate with interface impurities leads to a charge transfer from the MoS2 surface to the defect states and, thus, to the formation of

Fabrication of carbon nanospheres by the pyrolysis of polyacrylonitrile–poly(methyl methacrylate) core–shell composite nanoparticles

• Dafu Wei,
• Youwei Zhang and
• Jinping Fu

Beilstein J. Nanotechnol. 2017, 8, 1897–1908, doi:10.3762/bjnano.8.190

• spectroscopy result by Vowinkel et al. revealed the formation of pyridine groups after preoxidizing the film composed of SiO2@poly(styrene-co-AN) core–shell particles at 240 °C [30]. To optimize the preoxidation temperature of PAN–PMMA nanoparticles, the PAN-PMMA1 nanoparticles were preoxidized at 200 °C, 220

• SiO2 (178.49 mg/g) [54], manganese-impregnated zinc sulphide nanoparticles deposited on activated carbon (191.57 mg/g) [55] and γ-Fe2O3 loaded active carbon (195.55 mg/g) [56]. We believe the efficient removal of MB is mainly attributed to the small pore size and the high specific surface area of CP6