Growth, structure and stability of sputter-deposited MoS₂ thin films

• Reinhard Kaindl,
• Bernhard C. Bayer,
• Roland Resel,
• Thomas Müller,
• Viera Skakalova,
• Gerlinde Habler,
• Rainer Abart,
• Alexey S. Cherevan,
• Dominik Eder,
• Maxime Blatter,
• Fabian Fischer,
• Jannik C. Meyer,
• Dmitry K. Polyushkin and
• Wolfgang Waldhauser

Beilstein J. Nanotechnol. 2017, 8, 1115–1126, doi:10.3762/bjnano.8.113

• excess S content induced doping [35]. Further, intrinsic defects in multilayer MoS2 were previously shown to dominate metal/MoS2 contact resistance, resulting in both n-type and p-type conduction and shifts of the Fermi level by 1 eV over tens of nanometers in spatial resolution [47]. Importantly, these

The integration of graphene into microelectronic devices

• Guenther Ruhl,
• Sebastian Wittmann,
• Matthias Koenig and
• Daniel Neumaier

Beilstein J. Nanotechnol. 2017, 8, 1056–1064, doi:10.3762/bjnano.8.107

• should be manageable with respect to device manufacturing. 5 Contacts Because the performance of an electronic device, e.g., a transistor, is strongly affected by parasitic effects such as contact resistances (the contact resistance should not exceed 10% of the channel resistance), this issue is of

• . Both mechanisms result an increased contact resistance. Besides through choosing an appropriate metal, the contact resistance can be improved by thorough interface engineering [54] and applying an electrical field under the contacts to adjust the Fermi energy [55][56]. With respect to CMOS integration

Synthesis of coaxial nanotubes of polyaniline and poly(hydroxyethyl methacrylate) by oxidative/initiated chemical vapor deposition

• Alper Balkan,
• Efe Armagan and
• Gozde Ozaydin Ince

Beilstein J. Nanotechnol. 2017, 8, 872–882, doi:10.3762/bjnano.8.89

• optimized at 200 μm in order to provide better DC resistance. The lower resistance of 3772 kΩ of PANI-coated glass with electrodes compared to the resistance of 65664 kΩ of PANI-coated glass without electrodes measured in air can be explained by the reduced contact resistance between the PANI thin film and

3D Nanoprinting via laser-assisted electron beam induced deposition: growth kinetics, enhanced purity, and electrical resistivity

• Brett B. Lewis,
• Robert Winkler,
• Xiahan Sang,
• Pushpa R. Pudasaini,
• Michael G. Stanford,
• Harald Plank,
• Raymond R. Unocic,
• Jason D. Fowlkes and
• Philip D. Rack

Beilstein J. Nanotechnol. 2017, 8, 801–812, doi:10.3762/bjnano.8.83

• time plots were not affected. It is worth noting that the deposit resistivity is in actuality likely lower than reported here as the measurements includes a possibly significant contribution from contact resistance and the unpurified carbon-rich material near the substrate surface. However, the

Advances in the fabrication of graphene transistors on flexible substrates

• Gabriele Fisichella,
• Stella Lo Verso,
• Silvestra Di Marco,
• Vincenzo Vinciguerra,
• Emanuela Schilirò,
• Salvatore Di Franco,
• Raffaella Lo Nigro,
• Fabrizio Roccaforte,
• Amaia Zurutuza,
• Alba Centeno,
• Sebastiano Ravesi and
• Filippo Giannazzo

Beilstein J. Nanotechnol. 2017, 8, 467–474, doi:10.3762/bjnano.8.50

• determine the total electrical resistance, RTOT, between source and drain contacts are also illustrated in Figure 4d. Here, the gate-bias-dependent graphene channel resistance, Rch(Vg), the source and drain contact resistance, Rc, and the access resistance, Racc, associated with the ungated graphene access

• defects/polymer contaminations, is expected to play a key role in reducing graphene mobility. Finally, it should also be noted that this is a calculation of the extrinsic field effect mobility, where the contribution of the series resistances (such as the contact resistance Rc and the access resistance

Impact of contact resistance on the electrical properties of MoS₂ transistors at practical operating temperatures

• Filippo Giannazzo,
• Gabriele Fisichella,
• Aurora Piazza,
• Salvatore Di Franco,
• Giuseppe Greco,
• Simonpietro Agnello and
• Fabrizio Roccaforte

Beilstein J. Nanotechnol. 2017, 8, 254–263, doi:10.3762/bjnano.8.28

• and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resistance, RC, associated with the Schottky barrier between source/drain metals and MoS2 currently represents one of the

• power dissipation. From the analysis of the transfer characteristics (ID−VG) in the subthreshold regime, the Schottky barrier height (ΦB ≈ 0.18 eV) associated with the Ni/MoS2 contact was evaluated. The resulting contact resistance in the on-state (electron accumulation in the channel) was also

• 373 K, which was explained in terms of electron trapping at MoS2/SiO2 interface states. Keywords: contact resistance; mobility; MoS2; temperature dependence; threshold voltage; Introduction Transition metal dichalcogenides (TMDs) are compound materials formed by the Van der Waals stacking of MX2

Graphene–polymer coating for the realization of strain sensors

• Carmela Bonavolontà,
• Carla Aramo,
• Massimo Valentino,
• Giampiero Pepe,
• Sergio De Nicola,
• Gianfranco Carotenuto,
• Angela Longo,
• Mariano Palomba,
• Simone Boccardi and
• Carosena Meola

Beilstein J. Nanotechnol. 2017, 8, 21–27, doi:10.3762/bjnano.8.3

• transport mechanism should be taken into account, yielding a dependence of the conductivity on the configuration of overlap area and contact resistance of the platelets. The graphene-based layer can be considered as a granular system consisting of metal grains embedded in an insulating matrix and its

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

• Ivan Shtepliuk,
• Jens Eriksson,
• Volodymyr Khranovskyy,
• Tihomir Iakimov,
• Anita Lloyd Spetz and
• Rositsa Yakimova

Beilstein J. Nanotechnol. 2016, 7, 1800–1814, doi:10.3762/bjnano.7.173

• (contact resistance, a dominant role of the recombination of carriers as compared to thermal generation, a substrate effect that provides the general mechanisms for room-temperature limitation of the carrier transport and even formation of a dual barrier diode). Results of DFT calculations Binding strength

Rigid multipodal platforms for metal surfaces

• Michal Valášek,
• Marcin Lindner and
• Marcel Mayor

Beilstein J. Nanotechnol. 2016, 7, 374–405, doi:10.3762/bjnano.7.34

Kelvin probe force microscopy for local characterisation of active nanoelectronic devices

• Tino Wagner,
• Hannes Beyer,
• Patrick Reissner,
• Philipp Mensch,
• Heike Riel,
• Bernd Gotsmann and
• Andreas Stemmer

Beilstein J. Nanotechnol. 2015, 6, 2193–2206, doi:10.3762/bjnano.6.225

• potential drop at the contacts directly relates to the contact resistance. To extract contact resistance through traditional four-point measurements becomes increasingly difficult for scaled devices, in which the contact length is comparable to the device length. Recently, KFM has been used to extract the

• , and assuming uniform material or transport properties, for the nanowire device in Figure 9 we hereby obtain a contact resistance of 40 kΩ at the left electrode, 150 kΩ at the right electrode, and a channel resistance of 50 kΩ. In Figure 10, we compare the performance of our Kalman-KFM controller with

Electrical characterization of single molecule and Langmuir–Blodgett monomolecular films of a pyridine-terminated oligo(phenylene-ethynylene) derivative

• Henrry M. Osorio,
• Santiago Martín,
• María Carmen López,
• Santiago Marqués-González,
• Simon J. Higgins,
• Richard J. Nichols,
• Paul J. Low and
• Pilar Cea

Beilstein J. Nanotechnol. 2015, 6, 1145–1157, doi:10.3762/bjnano.6.116

• groups [67][68][69] and fullerenes [60][70][71]. However, many of these groups have significant limitations including chemical degradation at working temperatures [72][73], associated polymerization phenomena [74], small binding energies [74], unexpectedly high contact resistance [75][76][77][78][79][80

Entropy effects in the collective dynamic behavior of alkyl monolayers tethered to Si(111)

• Christian Godet

Beilstein J. Nanotechnol. 2015, 6, 583–594, doi:10.3762/bjnano.6.60

• in the reverse bias regime at low temperatures (130–300 K). In addition, low doping is interesting for providing a low depletion capacitance, which increases the high frequency cutoff (typically 1 MHz) arising from the series resistance RS (due to bulk Si and rear contact resistance) [40][41]. In the

• , useful information on dipolar mechanisms is limited by the series resistance RS (due to bulk Si and back contact resistance). Acquisition of dipolar relaxation data was performed in the reverse bias regime of the rectifying metal/OML/Si junction, with decreasing temperature steps and, at each temperature

Electrical contacts to individual SWCNTs: A review

• Wei Liu,
• Christofer Hierold and
• Miroslav Haluska

Beilstein J. Nanotechnol. 2014, 5, 2202–2215, doi:10.3762/bjnano.5.229

• connected to electrical circuitry, which is typically achieved by contacting the SWCNTs with metal. Due to possible low channel resistance (or even ballistic conduction), the metal–nanotube contact resistance can dominate the performance of these transistors. Devices with a low Schottky barrier height (SBH

• = h/4e2, rch is the channel resistance per unit length, Rc is the single contact resistance, ρc is the specific contact resistivity, Lc and Lch represent the contact width and the channel length, respectively, d is the diameter of the SWCNT, and Le is the mean free path for carrier scattering (which

• -terminal measurement: The four-terminal measurement is often used to determine the sheet resistance of thin films. The contact resistance can be extracted indirectly by subtracting the thin film resistance from the overall resistance. Two pairs of terminals are contacted to the target material and a

Advances in NO₂ sensing with individual single-walled carbon nanotube transistors

• Kiran Chikkadi,
• Matthias Muoth,
• Cosmin Roman,
• Miroslav Haluska and
• Christofer Hierold

Beilstein J. Nanotechnol. 2014, 5, 2179–2191, doi:10.3762/bjnano.5.227

• later be removed selectively, it is possible to improve the contact resistance as well as reduce the hysteresis simultaneously, as shown by Khamis et al. [66] with organic layers, and Liu et al. [17] with an aluminium oxide layer. Another possibility is to eliminate dielectrics altogether, for example

Effect of channel length on the electrical response of carbon nanotube field-effect transistors to deoxyribonucleic acid hybridization

• Hari Krishna Salila Vijayalal Mohan,
• Jianing An,
• Yani Zhang,
• Chee How Wong and
• Lianxi Zheng

Beilstein J. Nanotechnol. 2014, 5, 2081–2091, doi:10.3762/bjnano.5.217

• the length of the CNT [20][24]. Another definition of mobility, which includes device attributes such as contact resistance, parasitic resistance, and surface effects, is the conventional device field-effect transistor mobility (µf). It is obtained from the ID–VDS curve and is related to gm by, where

• . For short channel lengths, the change in contact resistance (ΔRc) and channel resistance (ΔRch) (Figure S3 in Supporting Information File 1 for L = 6 µm) contributed significantly to the change in total on state resistance (ΔRon) after hybridization. Moreover, the detection response of the channel

• plausible reasons for the observed behavior are discussed subsequently. Ideally, Δφ should be close to 0, however, in reality, φ could be influenced by contact resistance [35][36], optical/acoustic phonon scattering [33], and trapped charges [37] depending on L and VG, which leads to Δφ ≠ 0, and

Effect of contaminations and surface preparation on the work function of single layer MoS₂

• Oliver Ochedowski,
• Kolyo Marinov,
• Nils Scheuschner,
• Artur Poloczek,
• Benedict Kleine Bussmann,
• Janina Maultzsch and
• Marika Schleberger

Beilstein J. Nanotechnol. 2014, 5, 291–297, doi:10.3762/bjnano.5.32

• impact on the surface potential. Second, that by choosing appropriate materials the work function can be modified to reduce contact resistance. Keywords: KPFM; MoS2; NC-AFM; surface potential; work function; Introduction Due to their unique properties which can differ a lot compared to bulk materials

• , e.g., lower the contact resistance and improve their performance. First experiments adressing this issue for MoS2 by using Kelvin probe force microscopy (KPFM) have already been reported [28][29]. However, these measurements were not done on SLM but bilayer MoS2 (BLM) and higher layer numbers and the

Kelvin probe force microscopy of nanocrystalline TiO₂ photoelectrodes

• Alex Henning,
• Gino Günzburger,
• Res Jöhr,
• Yossi Rosenwaks,
• Biljana Bozic-Weber,
• Catherine E. Housecroft,
• Edwin C. Constable,
• Ernst Meyer and
• Thilo Glatzel

Beilstein J. Nanotechnol. 2013, 4, 418–428, doi:10.3762/bjnano.4.49

• offset at the heterojunction allows an estimation of the energy barrier. Depending on the front electrode material, this energy barrier varies and consequently the interface contact resistance differs. As a result, the FF of the DSC can be increased with a lower interface energy barrier and a narrower

Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates

• Gabriele Fisichella,
• Salvatore Di Franco,
• Patrick Fiorenza,
• Raffaella Lo Nigro,
• Fabrizio Roccaforte,
• Cristina Tudisco,
• Guido G. Condorelli,
• Nicolò Piluso,
• Noemi Spartà,
• Stella Lo Verso,
• Corrado Accardi,
• Cristina Tringali,
• Sebastiano Ravesi and
• Filippo Giannazzo

Beilstein J. Nanotechnol. 2013, 4, 234–242, doi:10.3762/bjnano.4.24

• , respectively. The electrical properties (sheet resistance, mobility, carrier density) of the transferred graphene as well as the specific contact resistance of metal contacts onto graphene were investigated by using properly designed test patterns. While a sheet resistance Rsh ≈ 1.7 kΩ/sq and a specific

• contact resistance ρc ≈ 15 kΩ·μm have been measured for graphene transferred onto SiO2, about 2.3× higher Rsh and about 8× higher ρc values were obtained for graphene on PEN. High-resolution current mapping by torsion resonant conductive atomic force microscopy (TRCAFM) provided an insight into the

• nanoscale mechanisms responsible for the very high ρc in the case of graphene on PEN, showing a ca. 10× smaller “effective” area for current injection than in the case of graphene on SiO2. Keywords: conductive AFM; contact resistance; graphene; mobility; PEN; sheet resistance; SiO2; Introduction Graphene

The memory effect of nanoscale memristors investigated by conducting scanning probe microscopy methods

• César Moreno,
• Carmen Munuera,
• Xavier Obradors and
• Carmen Ocal

Beilstein J. Nanotechnol. 2012, 3, 722–730, doi:10.3762/bjnano.3.82

• -coated tips with k = 2.8 N/m (Nanosensors) or Cr–Pt coated Si tips with k = 3 N/m, resonance frequency of 75 kHz and contact resistance of 300 Ω on a Pt thin film surface (Budgetsensors in-factory specifications). The same tip was used in all the C-SFM experiments of at least one series. To check tip

Conducting composite materials from the biopolymer kappa-carrageenan and carbon nanotubes

• Ali Aldalbahi,
• Jin Chu,
• Peter Feng and
• Marc in het Panhuis

Beilstein J. Nanotechnol. 2012, 3, 415–427, doi:10.3762/bjnano.3.48

• with sample length according to [9][27] where l, A, σ and RC are the length, cross-sectional area, electrical conductivity and contact resistance of the sample, respectively. The slope of the straight-line fit to Equation 3 can then be used to calculate the bulk conductivities (Table 3). Due to the

Functionalised zinc oxide nanowire gas sensors: Enhanced NO₂ gas sensor response by chemical modification of nanowire surfaces

• Eric R. Waclawik,
• Jin Chang,
• Andrea Ponzoni,
• Isabella Concina,
• Dario Zappa,
• Elisabetta Comini,
• Nunzio Motta,
• Guido Faglia and
• Giorgio Sberveglieri

Beilstein J. Nanotechnol. 2012, 3, 368–377, doi:10.3762/bjnano.3.43

• crystallites into larger masses tends to reduce the gas permeability through the matrix [14]. It also increases the influence of the interagglomerate contact resistance on the gas response of the sensors. Analysis of transmission electron microscope images of these ZnO materials reveals that the primary

Self-assembled monolayers and titanium dioxide: From surface patterning to potential applications

• Yaron Paz

Beilstein J. Nanotechnol. 2011, 2, 845–861, doi:10.3762/bjnano.2.94

• titanium dioxide. In many cases, as detailed below, the SAMs serve as mediators between the sensitizing molecules and the surface, and hence are required to exhibit good conductivity along the molecule, minimal contact resistance, and, no less important, a set of energy levels that can support vectorial