Absorption and photoconductivity spectra of amorphous multilayer structures

• Oxana Iaseniuc and
• Mihail Iovu

Beilstein J. Nanotechnol. 2020, 11, 1757–1763, doi:10.3762/bjnano.11.158

• upper one was transparent to the incident light, have been used for electrical and photoelectrical measurements. Figure 3 and Figure 4 show the current–voltage (I–V) characteristics of the amorphous thin-film HS Al–As0.40S0.30Se0.30/Ge0.09As0.09Se0.82/Ge.0.30As0.04S0.66–Al with positive or negative

• : Ge0.09As0.09Se0.82, 3: As0.40S0.30Se0.30, 4: As0.40S0.30Se0.30/Ge0.09As0.09Se0.82/Ge0.30As0.04S0.66). Current–voltage characteristics of the amorphous thin-film HS with a positive voltage applied to the top Al electrode, in the dark (1) and under illumination (2). Current–voltage characteristics of the amorphous

Selective detection of complex gas mixtures using point contacts: concept, method and tools

• Alexander P. Pospelov,
• Victor I. Belan,
• Dmytro O. Harbuz,
• Volodymyr L. Vakula,
• Lyudmila V. Kamarchuk,
• Yuliya V. Volkova and
• Gennadii V. Kamarchuk

Beilstein J. Nanotechnol. 2020, 11, 1631–1643, doi:10.3762/bjnano.11.146

• point-contact resistance. These changes are displayed in the dependencies of the Yanson point contact parameters. In the case of classical Yanson point-contact spectroscopy studies of electron–phonon interaction in metals, the energy-related processes are described by the current–voltage characteristic

• the second derivative of the current–voltage characteristic of the point contact and Vpc is the decrease in contact voltage. (b) A typical time dependence of the point-contact sensor conductance based on TCNQ compounds as a result of its interaction with the human breath (i.e., the breath point

High-responsivity hybrid α-Ag₂S/Si photodetector prepared by pulsed laser ablation in liquid

• Raid A. Ismail,
• Hanan A. Rawdhan and
• Duha S. Ahmed

Beilstein J. Nanotechnol. 2020, 11, 1596–1607, doi:10.3762/bjnano.11.142

• monodisperse Ag2S NPs when using the CTAB surfactant. The optoelectronic properties of α-Ag2S/p-Si photodetector, such as current–voltage characteristics and responsivity in the dark and under illumination, were also improved after using the CTAB surfactant. The responsivity of the photodetector increases from

• . The current–voltage (I–V) characteristics of Ag2S/Si under dark and illuminated conditions were investigated at room temperature using a digital power supply, an electrometer, and a tungsten lamp. The spectral responsivity of the photodetector was measured using a calibrated monochromator in the

Excitonic and electronic transitions in Me–Sb₂Se₃ structures

• Nicolae N. Syrbu,
• Victor V. Zalamai,
• Ivan G. Stamov and
• Stepan I. Beril

Beilstein J. Nanotechnol. 2020, 11, 1045–1053, doi:10.3762/bjnano.11.89

• (In–Sb2Se3) contacts, the structures were obtained by either thermal sputtering under vacuum or electrochemical deposition onto the cleaved faces of single crystals (Figure 3A). Current–voltage characteristics suggest that the contacts have an ohmic behavior. The impedance has a frequency dependence

A new photodetector structure based on graphene nanomeshes: an ab initio study

• Babak Sakkaki,
• Hassan Rasooli Saghai,
• Ghafar Darvish and
• Mehdi Khatir

Beilstein J. Nanotechnol. 2020, 11, 1036–1044, doi:10.3762/bjnano.11.88

• electronic and optical characteristics of various GNM structures. To investigate the device-level properties of GNMs, their current–voltage characteristics are explored by DFT-based tight-binding (DFTB) in combination with non-equilibrium Green’s function (NEGF) methods. Band structure analysis shows that

• the current transport in the device channel. The effect of the finite bias voltage on the channel potential is calculated using the Poisson equation with the NEGF method. Figure 4 shows the current–voltage characteristics of the three types of studied devices. Figure 4a shows that 6-AGNR and 7-AGNR

• spectra of different GNM materials. (a) A4A4-6, Z6Z6-6 and A4Z6-6 and (b) A4A4-24, Z12Z12-24 and A4Z6-24. Current–voltage (I–V) characteristics of (a) different GNR devices and (b) GNM and graphene devices. Calculated energy gaps for GNMs with hydrogen passivation of carbon atoms in proximity to the holes

Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

• Elena I. Monaico,
• Eduard V. Monaico,
• Veaceslav V. Ursaki,
• Shashank Honnali,
• Vitalie Postolache,
• Karin Leistner,
• Kornelius Nielsch and
• Ion M. Tiginyanu

Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81

• ). According to Li and co-workers [17], the anodization of GaAs with a carrier concentration of about 1018 cm−3 in a KOH electrolyte can be categorized into three etching modes, deduced from the analysis of the current–voltage plot at a scan rate of 5 mV·s−1. Practically no etching occurs when the applied

• light. The current–voltage characteristics measured with and without illumination reveal a good ohmic quality of the prepared Cr/Au contacts (Figure 8). Therefore, one can conclude that the detector works in the photoconductor mode. The responsivity of the detector is defined as where Iphoto is the

• in (A) shows a photo of five contacted GaAs nanowires on the same glass substrate. (B) Photocurrent build-up and relaxation of the photodetector measured for an IR illumination density of 800 mW·cm−2. Current–voltage characteristics measured in dark (curve 1) and under IR illumination with power

Microwave photon detection by an Al Josephson junction

• Leonid S. Revin,
• Andrey L. Pankratov,
• Anna V. Gordeeva,
• Anton A. Yablokov,
• Igor V. Rakut,
• Victor O. Zbrozhek and
• Leonid S. Kuzmin

Beilstein J. Nanotechnol. 2020, 11, 960–965, doi:10.3762/bjnano.11.80

• Following the line proposed in [4], an aluminium Al/AlOx/Al tunnel junction 0.4 × 2 µm2 was fabricated using a self-aligned shadow evaporation technique. Its current–voltage characteristic shown in the inset of Figure 1 (see below) has a well-defined hysteresis. The double voltage gap of the junction is

Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films

• Vadim Morari,
• Aida Pantazi,
• Nicolai Curmei,
• Vitalie Postolache,
• Emil V. Rusu,
• Marius Enachescu,
• Ion M. Tiginyanu and
• Veaceslav V. Ursaki

Beilstein J. Nanotechnol. 2020, 11, 899–910, doi:10.3762/bjnano.11.75

• contact on the p-type Si substrate. Figure 9 and Figure 10 compare the current–voltage characteristics of p-Si/n-Zn1−xMgxO heterojunctions for two films deposited by spin coating with x values of 0.10 (Figure 9) and 0.40 (Figure 10). One can see from Figure 9b and Figure 10b that in both cases the current

• , the investigated heterojunctions work as photodetectors at forward bias, while a classical p–n junction should function as a photodetector at reverse bias. Since the current–voltage characteristics are fit to straight lines in the log–log coordinates, it means that they correspond to a power function

• heterojunction with a Zn0.6Mg0.4O film, the current–voltage characteristics fit to the MG law both in the dark and under illumination (see Figure 10c). These observations suggest that the investigated heterojunctions work at forward bias as injection photodiodes [53][54]. A more detailed investigation of

A Josephson junction based on a highly disordered superconductor/low-resistivity normal metal bilayer

• Pavel M. Marychev and
• Denis Yu. Vodolazov

Beilstein J. Nanotechnol. 2020, 11, 858–865, doi:10.3762/bjnano.11.71

• of a single S layer at zero temperature). Our calculations show, that the proper choice of the thickness of the N layer leads both to nonhysteretic current–voltage characteristics even at low temperatures and a relatively large product IcRn. Keywords: normal metal–superconductor bilayer; Josephson

• achieve high noise immunity. Also many of these applications require to have a nonhysteretic current–voltage characteristic (IVC) and a large characteristic voltage Vc = IcRn, where Rn is the normal-state resistance of the junction. Tunnel superconductor–insulator–superconductor (SIS) Josephson junctions

• -thickness SN-N-SN bilayer in which the superconducting layer is partially (or entirely) etched by means of a focused ion beam. A sufficiently thick normal metal layer act as a good thermal bath, which yields a nonhysteretic current–voltage characteristic even at low temperatures. However, the increase of

Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions

• Majid Sanaeepur

Beilstein J. Nanotechnol. 2020, 11, 688–694, doi:10.3762/bjnano.11.56

• rather high transmission probabilities. Electrons with other energies have an extremely small chance of passing through. This causes RTDs to exhibit NDR in their current–voltage characteristic. Conventionally, RTDs are made by vertical stacking of bulk semiconductor materials with different bandgap

• the effect of CB and NC substitutional defects at the interface between the left ABNNR barrier and the well on the current–voltage characteristic of the proposed RTD. Both defects lower the on-site energy at the place of the substituted atom due to the n-type character, which shifts all energy levels

• compares the current–voltage characteristic of RTDs including BC and CN defects at the interface between the left barrier and the left spacer with that of a defect-free RTD. If there is no defect in the left spacer, by increasing the bias voltage a quantum well is formed in this region, which localizes

Current measurements in the intermittent-contact mode of atomic force microscopy using the Fourier method: a feasibility analysis

• Berkin Uluutku and
• Santiago D. Solares

Beilstein J. Nanotechnol. 2020, 11, 453–465, doi:10.3762/bjnano.11.37

• collection of lock-in amplifiers [30][31]. More recently, Borgani et al. used Fourier analysis to investigate non-linear conductance in C-AFM measurements, acquiring current–voltage responses at every scan point without sacrificing scanning speed [32]. In order to explore the various phenomena involved in

Anomalous current–voltage characteristics of SFIFS Josephson junctions with weak ferromagnetic interlayers

• Tairzhan Karabassov,
• Anastasia V. Guravova,
• Aleksei Yu. Kuzin,
• Elena A. Kazakova,
• Shiro Kawabata,
• Boris G. Lvov and
• Andrey S. Vasenko

Beilstein J. Nanotechnol. 2020, 11, 252–262, doi:10.3762/bjnano.11.19

• Physical Institute, Russian Academy of Sciences, 119991 Moscow, Russia 10.3762/bjnano.11.19 Abstract We present a quantitative study of the current–voltage characteristics (CVC) of SFIFS Josephson junctions (S = bulk superconductor, F = metallic ferromagnet, I = insulating barrier) with weak ferromagnetic

• interlayers, which we attribute to DOS energy dependencies in the case of small exchange fields in the F layers. Keywords: current–voltage characteristics; Josephson junctions; proximity effect, superconductivity; superconductor/ferromagnet hybrid nanostructures; Introduction It is well known that

• attention and have been extensively studied both experimentally [32][33][34][35][36][37][38][39][40][41] and theoretically [23][45][76][77][78][79][80]. For instance, the current–voltage characteristics (CVC) of SIFS Josephson junctions with a strong insulating layer were studied in [45]. They exhibit

Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

• Botond Sánta,
• Dániel Molnár,
• Patrick Haiber,
• Agnes Gubicza,
• Edit Szilágyi,
• Zsolt Zolnai,
• András Halbritter and
• Miklós Csontos

Beilstein J. Nanotechnol. 2020, 11, 92–100, doi:10.3762/bjnano.11.9

• –matrix multiplication [10][11][12]. An access to a continuum of resistance states exhibiting highly linear current–voltage [I(V)] characteristics were exploited to achieve a numerical precision up to 8 bits. Ag-based filamentary resistive switches [13][14][15][16][17][18][19][20][21][22][23][24][25][26

Mobility of charge carriers in self-assembled monolayers

• Zhihua Fu,
• Tatjana Ladnorg,
• Hartmut Gliemann,
• Alexander Welle,
• Asif Bashir,
• Michael Rohwerder,
• Qiang Zhang,
• Björn Schüpbach,
• Andreas Terfort and
• Christof Wöll

Beilstein J. Nanotechnol. 2019, 10, 2449–2458, doi:10.3762/bjnano.10.235

• vertical charge transport through individual molecules of aromatic SAMs by using conductive atomic force microscope (c-AFM) [12][13][14][15] and scanning tunneling microscope (STM) techniques [16][17]. Using these methods, current–voltage (I–V-) curves on the SAM-forming organothiolates has been determined

Semitransparent Sb₂S₃ thin film solar cells by ultrasonic spray pyrolysis for use in solar windows

• Jako S. Eensalu,
• Atanas Katerski,
• Erki Kärber,
• Lothar Weinhardt,
• Monika Blum,
• Clemens Heske,
• Wanli Yang,
• Ilona Oja Acik and
• Malle Krunks

Beilstein J. Nanotechnol. 2019, 10, 2396–2409, doi:10.3762/bjnano.10.230

• % w/w) from Chemsavers. Solar cell characterization The current–voltage (I–V) curves of the solar cells were measured by using a factory-calibrated solar simulator (Newport Oriel Sol3A class AAA) that provided AM1.5G, 100 mA cm−2 light intensity, a metal mask with adjustable aperture area, and a

Prestress-loading effect on the current–voltage characteristics of a piezoelectric p–n junction together with the corresponding mechanical tuning laws

• Wanli Yang,
• Shuaiqi Fan,
• Yuxing Liang and
• Yuantai Hu

Beilstein J. Nanotechnol. 2019, 10, 1833–1843, doi:10.3762/bjnano.10.178

• non-equilibrium minority carriers under the influence of a piezo potential and to calculate the corresponding current–voltage (I–V) characteristics of a piezoelectric p–n junction exposed to mechanical loading. An effective solution to describe this non-equilibrium process has been put forward

A biomimetic nanofluidic diode based on surface-modified polymeric carbon nitride nanotubes

• Kai Xiao,
• Baris Kumru,
• Lu Chen,
• Lei Jiang,
• Bernhard V. K. J. Schmidt and
• Markus Antonietti

Beilstein J. Nanotechnol. 2019, 10, 1316–1323, doi:10.3762/bjnano.10.130

• CNNMs. Modification of the carbon nitride nanotube membrane The current–voltage (I–V) measurements of the bare carbon nitride nanotubes showed that ion transport across the CNNM is symmetric. The CNNM shows no ion rectification because of its symmetric structure and surface-charge distribution (Figure

• CNNM after unilateral AHPA group modification. (c) FTIR spectra before and after the unilateral modification with AHPA and AA groups. (a) Current–voltage curves before and after unilateral modification with AHPA. (b) Current–voltage curves before and after unilateral modification with AA. Supporting

Molecular attachment to a microscope tip: inelastic tunneling, Kondo screening, and thermopower

• Rouzhaji Tuerhong,
• Mauro Boero and
• Jean-Pierre Bucher

Beilstein J. Nanotechnol. 2019, 10, 1243–1250, doi:10.3762/bjnano.10.124

• tunneling through excitation of molecular vibration modes. Parameter-dependent transport in a molecular junction In order to gain additional information about the kinetics of carriers not contained in the current–voltage characteristics we want to evaluate the impact of the zero-bias peak on the thermopower

Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble

• David van Treeck,
• Johannes Ledig,
• Gregor Scholz,
• Jonas Lähnemann,
• Mattia Musolino,
• Abbes Tahraoui,
• Oliver Brandt,
• Andreas Waag,
• Henning Riechert and
• Lutz Geelhaar

Beilstein J. Nanotechnol. 2019, 10, 1177–1187, doi:10.3762/bjnano.10.117

• Institut für Halbleitertechnik, TU Braunschweig, Hans-Sommer-Str. 66, 38106 Braunschweig, Germany Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany 10.3762/bjnano.10.117 Abstract We present the combined analysis of electroluminescence (EL) and current–voltage (I–V

• employed here a very powerful analysis tool. Keywords: electroluminescence; external quantum efficiency (EQE); nanowire LED; single nanowire; current–voltage; Introduction Group-III nitride nanowire (NW) ensembles have been employed for a wide range of applications, especially optoelectronic devices [1

• approach, single NWs can be directly contacted with a probe tip installed in a scanning electron microscope (SEM). For instance, using this technique, Lee et al. studied the current–voltage (I–V) characteristics of single GaN-based NW LEDs in the ensemble. However, they were not able to measure the

Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2019, 10, 1125–1130, doi:10.3762/bjnano.10.112

• atmosphere for 1 h. The TFTs are designed with fixed width (W) of 50 μm and length (L) of 20 μm. The current–voltage (I–V) curves are measured using an Agilent 4156C semiconductor parameter analyzer at room temperature. For the photo-leakage current measurements, monochromatic light with wavelengths λ of 400

Novel reversibly switchable wettability of superhydrophobic–superhydrophilic surfaces induced by charge injection and heating

• Xiangdong Ye,
• Junwen Hou and
• Dongbao Cai

Beilstein J. Nanotechnol. 2019, 10, 840–847, doi:10.3762/bjnano.10.84

• reversible transition of graphene surface water droplets from hydrophobic to hydrophilic was studied at a shutdown voltage [24]. Nbelayim et al. [25] achieved the reversible transformation of graphene from hydrophobic to hydrophilic driven by a direct-current voltage. Cui et al. [26] tested droplets of

A carrier velocity model for electrical detection of gas molecules

• Ali Hosseingholi Pourasl,
• Sharifah Hafizah Syed Ariffin,
• Mohammad Taghi Ahmadi,
• Razali Ismail and
• Niayesh Gharaei

Beilstein J. Nanotechnol. 2019, 10, 644–653, doi:10.3762/bjnano.10.64

• versa. All these phenomena lead to the variation of the velocity of the electrons and change the current–voltage properties of the sensor. These effects are important factors that can be used as sensing parameters in the sensor modelling. In this paper, the fundamentals and working principles of gas

• molecular adsorption effect on the carrier velocity, the current–voltage properties of the AGNR sensor based on the velocity relation with I–V can be derived as: where n is the charge carrier density, and q is the electrical charge. Besides the modelling study, the first principle calculation using the

• presented before in Figure 5. The hopping integral parameters for NO and CO are extracted and presented in Table 2. Based on Equation 12, the current–voltage properties of the AGNR sensor are illustrated in Figure 7a–c and the effects of the molecular adsorption are discussed. For the bare AGNR, the value

Temperature-dependent Raman spectroscopy and sensor applications of PtSe₂ nanosheets synthesized by wet chemistry

• Mahendra S. Pawar and
• Dattatray J. Late

Beilstein J. Nanotechnol. 2019, 10, 467–474, doi:10.3762/bjnano.10.46

• ]. All of the electrical tests such as current–voltage (I–V) and current–time (I–t) measurements were carried out using a Keithley 2612A system source meter which was attached to a computer through a GPIB 488A interface. For the photodetection study, a green LED was used. All sensor experiments were

Integration of LaMnO_3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD

• Raquel Rodriguez-Lamas,
• Dolors Pla,
• Odette Chaix-Pluchery,
• Benjamin Meunier,
• Fabrice Wilhelm,
• Andrei Rogalev,
• Laetitia Rapenne,
• Xavier Mescot,
• Quentin Rafhay,
• Hervé Roussel,
• Michel Boudard,
• Carmen Jiménez and
• Mónica Burriel

Beilstein J. Nanotechnol. 2019, 10, 389–398, doi:10.3762/bjnano.10.38

• current–voltage characteristics of an orthorhombic LMO device. After a forming step, reproducible and reversible clockwise bipolar RS response was attained. The “set” and “reset” values were around −0.7 V and +0.6 V, respectively, which are considerably lower than those reported for epitaxial LMO (−1.5 V

Transport signatures of an Andreev molecule in a quantum dot–superconductor–quantum dot setup

• Zoltán Scherübl,
• András Pályi and
• Szabolcs Csonka

Beilstein J. Nanotechnol. 2019, 10, 363–378, doi:10.3762/bjnano.10.36