Impact of contact resistance on the electrical properties of MoS₂ transistors at practical operating temperatures

• Filippo Giannazzo,
• Gabriele Fisichella,
• Aurora Piazza,
• Salvatore Di Franco,
• Giuseppe Greco,
• Simonpietro Agnello and
• Fabrizio Roccaforte

Beilstein J. Nanotechnol. 2017, 8, 254–263, doi:10.3762/bjnano.8.28

• . These properties make MoS2 an interesting material for the next generation of electronics and optoelectronics devices [2]. As an example, field effect transistors with very interesting performance in terms of the on/off current ratio (106–108) and low subthreshold swing (≈70 meV/decade) have been

Ordering of Zn-centered porphyrin and phthalocyanine on TiO₂(011): STM studies

• Piotr Olszowski,
• Lukasz Zajac,
• Szymon Godlewski,
• Bartosz Such,
• Rémy Pawlak,
• Antoine Hinaut,
• Res Jöhr,
• Thilo Glatzel,
• Ernst Meyer and
• Marek Szymonski

Beilstein J. Nanotechnol. 2017, 8, 99–107, doi:10.3762/bjnano.8.11

• oxides. Recently various devices, such as light-emitting diodes [1], organic field effect transistors [2], and dye-sensitized solar cells [3], have been developed and commercialized. It is apparent that in almost all areas of utilization, the electronic properties of complex structures play a crucial

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

• Ivan Shtepliuk,
• Jens Eriksson,
• Volodymyr Khranovskyy,
• Tihomir Iakimov,
• Anita Lloyd Spetz and
• Rositsa Yakimova

Beilstein J. Nanotechnol. 2016, 7, 1800–1814, doi:10.3762/bjnano.7.173

• ]. In particular, it was previously reported that functionalized graphene oxide sheets on Au templates can effectively detect lead and mercury ions with improved electrochemical performance [18]. The possibility of using field effect transistors (FET) based on thermally reduced graphene oxide decorated

Metal oxide-graphene field-effect transistor: interface trap density extraction model

• Faraz Najam,
• Kah Cheong Lau,
• Cheng Siong Lim,
• Yun Seop Yu and
• Michael Loong Peng Tan

Beilstein J. Nanotechnol. 2016, 7, 1368–1376, doi:10.3762/bjnano.7.128

• , 11900, Malaysia Department of Electrical, Electronic and Control Engineering and IITC, Hankyong National University, Anseong 456-749, Korea 10.3762/bjnano.7.128 Abstract A simple to implement model is presented to extract interface trap density of graphene field effect transistors. The presence of

Functional fusion of living systems with synthetic electrode interfaces

• Oskar Staufer,
• Sebastian Weber,
• C. Peter Bengtson,
• Hilmar Bading,
• Joachim P. Spatz and
• Amin Rustom

Beilstein J. Nanotechnol. 2016, 7, 296–301, doi:10.3762/bjnano.7.27

• . Nat. Nano. 2013, 8, 83–94). Such techniques include nanoelectric scaffolds containing free-standing silicon NWs (Robinson, J. T.; Jorgolli, M.; Shalek, A. K.; Yoon, M. H.; Gertner, R. S.; Park, H. Nat Nanotechnol. 2012, 10, 180–184) or NW field-effect transistors (Qing, Q.; Jiang, Z.; Xu, L.; Gao, R

Case studies on the formation of chalcogenide self-assembled monolayers on surfaces and dissociative processes

• Yongfeng Tong,
• Tingming Jiang,
• Azzedine Bendounan,
• Makri Nimbegondi Kotresh Harish,
• Angelo Giglia,
• Stefan Kubsky,
• Fausto Sirotti,
• Luca Pasquali,
• Srinivasan Sampath and
• Vladimir A. Esaulov

Beilstein J. Nanotechnol. 2016, 7, 263–277, doi:10.3762/bjnano.7.24

• versatility, intrinsic charge transport behavior with high carrier mobility, and high light harvesting efficiency. Their use includes application in field effect transistors, solar cells and light emitting diodes. A number of studies have been devoted to the assembly of these molecules on metallic electrodes

Chemical bath deposition of textured and compact zinc oxide thin films on vinyl-terminated polystyrene brushes

• Nina J. Blumenstein,
• Caroline G. Hofmeister,
• Peter Lindemann,
• Cheng Huang,
• Johannes Baier,
• Andreas Leineweber,
• Stefan Walheim,
• Christof Wöll,
• Thomas Schimmel and
• Joachim Bill

Beilstein J. Nanotechnol. 2016, 7, 102–110, doi:10.3762/bjnano.7.12

• emitting diodes, as surface acoustic wave generators or for field effect transistors [1][2][3][4][5][6][7][8]. Up to now, the fabrication of nanosized devices requires complex techniques like magnetron sputtering or pulsed laser deposition. Therefore, it is of high interest to develop easy-to-handle

Current-induced runaway vibrations in dehydrogenated graphene nanoribbons

• Rasmus Bjerregaard Christensen,
• Jing-Tao Lü,
• Per Hedegård and
• Mads Brandbyge

Beilstein J. Nanotechnol. 2016, 7, 68–74, doi:10.3762/bjnano.7.8

• transverse ribbon direction. This opens the possibilities of realizing various electronic devices, especially field-effect transistors, using graphene nanoribbons. Atomically precise ribbons [2], as well as more advanced ribbon-based structures [3][4], have been fabricated “bottom-up” on metal surfaces. The

Self-organization of gold nanoparticles on silanated surfaces

• Htet H. Kyaw,
• Salim H. Al-Harthi,
• Azzouz Sellai and
• Joydeep Dutta

Beilstein J. Nanotechnol. 2015, 6, 2345–2353, doi:10.3762/bjnano.6.242

• Nanotechnolgy at Sultan Qaboos University and SQU-UAE 2013 funding project (Study of graphene field effect transistors for high speed applications).

Kelvin probe force microscopy for local characterisation of active nanoelectronic devices

• Tino Wagner,
• Hannes Beyer,
• Patrick Reissner,
• Philipp Mensch,
• Heike Riel,
• Bernd Gotsmann and
• Andreas Stemmer

Beilstein J. Nanotechnol. 2015, 6, 2193–2206, doi:10.3762/bjnano.6.225

• optimise device performance, for example as field effect transistors. Figure 9b displays the simultaneously acquired C'', calculated from the 2ωm sideband amplitudes, Equation 14. To ensure highest lateral potential resolution, we used highly doped silicon AFM tips (Olympus AC160TS-R3) without a metal

High I_on/I_off current ratio graphene field effect transistor: the role of line defect

• Mohammad Hadi Tajarrod and
• Hassan Rasooli Saghai

Beilstein J. Nanotechnol. 2015, 6, 2062–2068, doi:10.3762/bjnano.6.210

• of AGNR. However, no study has yet been conducted on the effect of the extended line defect on field effect transistors. In the present study, first, the device performance of an AGNR field effect transistor with ELD was investigated by employing self-consistent NEGF formalism and tight-binding

• . Conclusion In this study a comprehensive numerical analysis was conducted about graphene nanoribbon field effect transistors with extended line defects (ELD-GNRFET) based on the NEGF formalism. According to the simulation results, applying a perpendicular line defect in an AGNR channel led to the decrease of

Nanotechnology in the real world: Redeveloping the nanomaterial consumer products inventory

• Marina E. Vance,
• Todd Kuiken,
• Eric P. Vejerano,
• Sean P. McGinnis,
• Michael F. Hochella Jr.,
• David Rejeski and
• Matthew S. Hull

Beilstein J. Nanotechnol. 2015, 6, 1769–1780, doi:10.3762/bjnano.6.181

• expect nano-electronics to exist now in massive numbers of consumer products, such as mobile devices, where field effect transistors, the heart of chip technology, have components (sources, gates, collectors, channels) that are now in the nanoscale [25] and would fit into the nanostructured bulk category

Electron and heat transport in porphyrin-based single-molecule transistors with electro-burnt graphene electrodes

• Hatef Sadeghi,
• Sara Sangtarash and
• Colin J. Lambert

Beilstein J. Nanotechnol. 2015, 6, 1413–1420, doi:10.3762/bjnano.6.146

• transistors (BJT) or switch the voltage in field effect transistors (FET) [1][2]. Recently, the idea of two-terminal molecular-scale transistors has been proposed in which a molecule forms the conducting channel of the transistor [3]. According to Moore’s law [4], the number of transistors in an integrated

Growth and morphological analysis of segmented AuAg alloy nanowires created by pulsed electrodeposition in ion-track etched membranes

• Ina Schubert,
• Loic Burr,
• Christina Trautmann and
• Maria Eugenia Toimil-Molares

Beilstein J. Nanotechnol. 2015, 6, 1272–1280, doi:10.3762/bjnano.6.131

• wires have also great potential as electronic components [7] and, thus, Au nanowires separated by small gaps are very promising as nanowire electrodes that can be used as field effect transistors [48] and for the capture and electrical characterization of nanoparticles [49]. For all these applications

Electrical contacts to individual SWCNTs: A review

• Wei Liu,
• Christofer Hierold and
• Miroslav Haluska

Beilstein J. Nanotechnol. 2014, 5, 2202–2215, doi:10.3762/bjnano.5.229

• mechanical properties [1][2][3] as well as thermal and electrical conductivity [4][5], enabling ballistic charge carrier transport up to the microscale at room temperature [6][7]. The emergence of carbon nanotube field-effect transistors (CNFETs) using SWCNTs as the device channel provides a possible

• solution to the problem of undesirable, short-channel effects occurring in metal oxide semiconductor field-effect transistors (MOSFETs) on the order of tens of nanometers [8]. Furthermore, the diameter-normalized charge carrier density in sub-10 nm CNFETs is four times higher than for silicon-based devices

Advances in NO₂ sensing with individual single-walled carbon nanotube transistors

• Kiran Chikkadi,
• Matthias Muoth,
• Cosmin Roman,
• Miroslav Haluska and
• Christofer Hierold

Beilstein J. Nanotechnol. 2014, 5, 2179–2191, doi:10.3762/bjnano.5.227

• individual single-walled carbon nanotube field-effect transistors have been shown to be operational at room temperature with ultra-low power consumption. Sensor recovery within minutes through UV illumination or self-heating has been shown. Improvements in fabrication processes aimed at reducing the impact

• nanotube properties into functional ultra-low power, highly sensitive gas sensors. Keywords: carbon nanotube field-effect transistors (CNFETs); cross-sensitivity; functionalization; gas sensors; hysteresis; low power; selectivity; self-heating; single walled carbon nanotubes; Introduction New materials

• large shift of the threshold voltage in carbon nanotube field-effect transistors (CNFETs). SWNTs possess several properties that make them attractive candidates for gas sensors. They have all their atoms on the surface, endowing them with the highest specific surface area possible together with graphene

Sequence-dependent electrical response of ssDNA-decorated carbon nanotube, field-effect transistors to dopamine

• Hari Krishna Salila Vijayalal Mohan,
• Jianing An and
• Lianxi Zheng

Beilstein J. Nanotechnol. 2014, 5, 2113–2121, doi:10.3762/bjnano.5.220

• , Abu Dhabi, United Arab Emirates 10.3762/bjnano.5.220 Abstract Single-walled carbon nanotube (SWCNT)-based field-effect transistors (FETs) have been explored for use as biological/chemical sensors. Dopamine (DA) is a biomolecule with great clinical significance for disease diagnosis, however, SWCNT

Effect of channel length on the electrical response of carbon nanotube field-effect transistors to deoxyribonucleic acid hybridization

• Hari Krishna Salila Vijayalal Mohan,
• Jianing An,
• Yani Zhang,
• Chee How Wong and
• Lianxi Zheng

Beilstein J. Nanotechnol. 2014, 5, 2081–2091, doi:10.3762/bjnano.5.217

Electronic and electrochemical doping of graphene by surface adsorbates

• Hugo Pinto and
• Alexander Markevich

Beilstein J. Nanotechnol. 2014, 5, 1842–1848, doi:10.3762/bjnano.5.195

• transfer is expected within the electronic doping model. In addition, electrochemical doping is in the origin of the hysteresis effects often observed in graphene-based field effect transistors when operating in the atmospheric environment. Keywords: adsorbates; doping; electrochemical; electronic

• atomic and molecular dopants. Review Mechanisms of doping Charge carriers, either electrons or holes, can be induced in graphene by the application of an electric field or by chemical doping. The electric field effect doping is usually performed in graphene-based field effect transistors (FET), in which

• but it may require appreciable time to occur since the reaction and diffusion barriers have to be overcome. Moreover, the electrochemical doping model can explain the hysteresis effects usually observed in graphene based field effect transistors when operating in atmospheric environment. Scheme of the

Silicon and germanium nanocrystals: properties and characterization

• Ivana Capan,
• Alexandra Carvalho and
• José Coutinho

Beilstein J. Nanotechnol. 2014, 5, 1787–1794, doi:10.3762/bjnano.5.189

• metal oxide semiconductor (MOS) field effect transistors and memory devices makes memory less sensitive to common problems such as leakage current and dielectric breakdown and allows for an ultimate miniaturization without electrical instabilities [1]. Moreover, nanostructures offer significant

Numerical investigation of the effect of substrate surface roughness on the performance of zigzag graphene nanoribbon field effect transistors symmetrically doped with BN

• Majid Sanaeepur,
• Arash Yazdanpanah Goharrizi and
• Mohammad Javad Sharifi

Beilstein J. Nanotechnol. 2014, 5, 1569–1574, doi:10.3762/bjnano.5.168

• Majid Sanaeepur Arash Yazdanpanah Goharrizi Mohammad Javad Sharifi Department of Electrical and Computer Engineering, Shahid Beheshti University, Velenjak Ave., Tehran, Postal Code: 1983963113, Iran 10.3762/bjnano.5.168 Abstract The performance of field effect transistors comprised of a zigzag

• ; substrate roughness; zigzag graphene nanoribbon field effect transistor (ZGNRFET); Introduction Field effect transistors (FETs) with a 10 nm gate length are stipulated by the International Technology Roadmap for Semiconductors (ITRS) for the year 2020 [1]. Regarding the Si scaling limits, it is obvious

• -lattices [25]. BN-doped ZGNRs may be used as a channel material for nanometer-sized conventional field effect transistors. Although the one-atom thick nature of GNRs makes them highly sensitive to their environmental surroundings, for example, the substrate material, phonons from the substrate and charged

Sublattice asymmetry of impurity doping in graphene: A review

• James A. Lawlor and
• Mauro S. Ferreira

Beilstein J. Nanotechnol. 2014, 5, 1210–1217, doi:10.3762/bjnano.5.133

• other novel devices [1][2][3]. One of the main problems with using regular graphene for such applications is the absence of a band gap in the electronic band structure [4], and as a result any field effect transistors (FETs) made using the material (so-called GFETs) would be unable to be switched off

Methods for rapid frequency-domain characterization of leakage currents in silicon nanowire-based field-effect transistors

• Tomi Roinila,
• Xiao Yu,
• Jarmo Verho,
• Tie Li,
• Pasi Kallio,
• Matti Vilkko,
• Anran Gao and
• Yuelin Wang

Beilstein J. Nanotechnol. 2014, 5, 964–972, doi:10.3762/bjnano.5.110

• 10.3762/bjnano.5.110 Abstract Silicon nanowire-based field-effect transistors (SiNW FETs) have demonstrated the ability of ultrasensitive detection of a wide range of biological and chemical targets. The detection is based on the variation of the conductance of a nanowire channel, which is caused by the

• technologies, silicon nanowire (SiNW)-based field-effect transistors (FETs) [1] are one of the most promising building blocks for the next generation of electrical circuits in recognizing a wide range of biological and chemical targets. They have been successfully used in the detection of DNA [2], pH [3

• dynamics change rapidly. Conclusion Silicon nanowire-based field-effect transistors (SiNW FETs) have been experimentally used for direct, label-free, highly selective, real-time detection of biological and chemical targets at very low concentrations. Most SiNW FET detectors are fabricated with SOI wafers

An analytical approach to evaluate the performance of graphene and carbon nanotubes for NH₃ gas sensor applications

• Elnaz Akbari,
• Vijay K. Arora,
• Aria Enzevaee,
• Mohamad. T. Ahmadi,
• Mehdi Saeidmanesh,
• Mohsen Khaledian,
• Hediyeh Karimi and
• Rubiyah Yusof

Beilstein J. Nanotechnol. 2014, 5, 726–734, doi:10.3762/bjnano.5.85

• the bonding characteristics between these molecules and the CNT [33][34]. It is always important to obtain p-type and/or n-type semiconducting CNT to incorporate them in a complementary logic. A p–n junction is a result of this complementarity. n-Type and p-type nanoscale field effect transistors can

Enhanced photocatalytic activity of Ag–ZnO hybrid plasmonic nanostructures prepared by a facile wet chemical method

• Sini Kuriakose,
• Vandana Choudhary,
• Biswarup Satpati and
• Satyabrata Mohapatra

Beilstein J. Nanotechnol. 2014, 5, 639–650, doi:10.3762/bjnano.5.75

• including UV lasers [1], field effect transistors [2], dye sensitized solar cells [3][4], surface enhanced Raman spectroscopy (SERS) [5] and biomedical applications [6][7][8][9][10]. ZnO nanostructures are promising photocatalysts because of their high quantum efficiency, high redox potential, superior