Numerical investigation of depth profiling capabilities of helium and neon ions in ion microscopy

• Patrick Philipp,
• Lukasz Rzeznik and
• Tom Wirtz

Beilstein J. Nanotechnol. 2016, 7, 1749–1760, doi:10.3762/bjnano.7.168

• lateral resolution for 2D and 3D imaging. By contrast the development of a mass spectrometer as an add-on tool for the helium ion microscope (HIM), which uses finely focussed He+ or Ne+ beams, allows for the analysis of secondary ions and small secondary cluster ions with unprecedented lateral resolution

• ], minimising the fragmentation of the polymer chains to retain a maximum of organic information by using cluster primary ions is one field of investigation. Nevertheless, for high lateral resolution, the use of monatomic primary ion species is however required. For the latter, the detection of small secondary

• resolvable. Some separation is possible for 20 nm inter-layer distances, although the separation is not clear. Depth profiling with 1 keV Ne+ and Ar+ For 1 keV Ne+ and Ar+ beams, the lateral resolution will be reduced compared to the 20 keV conditions, but depth profiling capabilities are largely improved

Hydrophilic silver nanoparticles with tunable optical properties: application for the detection of heavy metals in water

• Paolo Prosposito,
• Federico Mochi,
• Erica Ciotta,
• Mauro Casalboni,
• Fabio De Matteis,
• Iole Venditti,
• Laura Fontana,
• Giovanna Testa and
• Ilaria Fratoddi

Beilstein J. Nanotechnol. 2016, 7, 1654–1661, doi:10.3762/bjnano.7.157

• the Smolukovsky equation [55]. The scanning tunneling microscope (Tops System, WA Technology) consists of a UHV attachment with an antivibration stacking and a piezoelectric tube with 2 mm maximum scanning area for the tip movement. The lateral resolution of the microscope is ±1 Å and the accuracy in

Nano- and microstructured materials for in vitro studies of the physiology of vascular cells

• Alexandra M. Greiner,
• Adria Sales,
• Hao Chen,
• Sarah A. Biela,
• Dieter Kaufmann and
• Ralf Kemkemer

Beilstein J. Nanotechnol. 2016, 7, 1620–1641, doi:10.3762/bjnano.7.155

• a different work, a plasmon was used to pattern a photoresist layer by means of NSOM (near-field scanning optical microscopy). A lateral resolution of about 50 nm was achieved, with a fabrication speed of ca 10 mm/s [65]. Nanoimprint lithography (NIL) is a low-cost nanopatterning technique for 2D

An ellipsometric approach towards the description of inhomogeneous polymer-based Langmuir layers

• Falko O. Rottke,
• Burkhard Schulz,
• Klaus Richau,
• Karl Kratz and
• Andreas Lendlein

Beilstein J. Nanotechnol. 2016, 7, 1156–1165, doi:10.3762/bjnano.7.107

• Δ into thickness maps and therefore to achieve quantitative analysis of the 3D morphology of the Langmuir layers with lateral resolution at the µm scale. Exploiting the nulling-based ellipsometric contrast in this way avoids the methodological problems inherent in the photometric evaluation of BAM

• and a CCD camera (768 × 572 pixel) were used to take all micrographs, with a resulting lateral resolution of ≈2 μm. Nulling-based thickness mapping The same ellipsometer as mentioned above was used for ellipsometric mapping. An AOI of 50° and a 658 nm laser as a light source were used. For the

Experimental and simulation-based investigation of He, Ne and Ar irradiation of polymers for ion microscopy

• Lukasz Rzeznik,
• Yves Fleming,
• Tom Wirtz and
• Patrick Philipp

Beilstein J. Nanotechnol. 2016, 7, 1113–1128, doi:10.3762/bjnano.7.104

• the helium ion microscope (HIM) promises higher lateral resolution than on classical SIMS instruments. However, full advantage of this new technique can only be obtained when the interaction of He+ or Ne+ primary ions with the sample is fully controlled. In this work we investigate how He+ and Ne

• . Keywords: Helium ion microscopy; irradiation; polymers; preferential sputtering; secondary ion mass spectrometry; simulations; Introduction Progress in materials and life sciences requires sample characterisation with high lateral resolution and high sensitivity. A technique which allows for both is

• is a SIMS instrument dedicated to high-resolution imaging, a lateral resolution of around 50 nm can be reached. Recently, the development of a SIMS add-on system for the helium ion microscope (HIM) [2] demonstrated SIMS imaging with even higher lateral resolution in the 10 nm range [3]. Initially the

Customized MFM probes with high lateral resolution

• Óscar Iglesias-Freire,
• Miriam Jaafar,
• Eider Berganza and
• Agustina Asenjo

Beilstein J. Nanotechnol. 2016, 7, 1068–1074, doi:10.3762/bjnano.7.100

• and poor lateral resolution when working under standard conditions. In this work, we present a convenient route to prepare high-performance MFM probes with sub-10 nm (sub-25 nm) topographic (magnetic) lateral resolution by following an easy and quick low-cost approach. This allows one to not only

• resolution is not greatly enhanced compared to commercial tips so their applicability is limited to particular cases of interest. Intrinsically related to the lateral resolution is the magnetic sensitivity of the probe. In order to achieve better signal-to-noise ratios, one may want larger amounts of

• magnetic material to be deposited at the tip apex. Unfortunately, this results in larger tip radii and subsequent lower lateral resolution; furthermore, the influence over the sample magnetic state can increase. Depending on the specific properties of each sample, a balance between resolution and

High-resolution noncontact AFM and Kelvin probe force microscopy investigations of self-assembled photovoltaic donor–acceptor dyads

• Benjamin Grévin,
• Pierre-Olivier Schwartz,
• Laure Biniek,
• Martin Brinkmann,
• Nicolas Leclerc,
• Elena Zaborova and
• Stéphane Méry

Beilstein J. Nanotechnol. 2016, 7, 799–808, doi:10.3762/bjnano.7.71

• images with a very high lateral resolution are achieved, which allows for the resolution of local photo-charging contrasts at the scale of single edge-on lamella. This work paves the way for local investigations of the optoelectronic properties of donor–acceptor supramolecular architectures down to the

• the alignment was estimated by comparing topographic cross-section profiles extracted with the multiple profile tool of WsXM (see Supporting Information File 1 for more details). The estimated lateral resolution is indicated for each SPV image in the corresponding figure caption. Dyads thin films (50

• analysis reveals that these local SPV contrasts are actually correlated with the supramolecular lattice. One lamella, displaying an SPV lower than its neighbour, is highlighted in Figure 9b,c and Figure 9e,f. For the latter data sets (Figure 9e,f), the lateral resolution falls (on average) below 1 nm (see

Magnetic switching of nanoscale antidot lattices

• Ulf Wiedwald,
• Joachim Gräfe,
• Kristof M. Lebecki,
• Maxim Skripnik,
• Felix Haering,
• Gisela Schütz,
• Paul Ziemann,
• Eberhard Goering and
• Ulrich Nowak

Beilstein J. Nanotechnol. 2016, 7, 733–750, doi:10.3762/bjnano.7.65

• at a lateral resolution better than the structural grain size of the antidots based on magneto-optical Kerr (MOKE) microscopy is possible and the determination of interaction- and coercive field-distributions by fast MOKE related first-order reversal curves (FORC) is feasible. The hands-on

Influence of calcium on ceramide-1-phosphate monolayers

• Joana S. L. Oliveira,
• Gerald Brezesinski,
• Alexandra Hill and
• Arne Gericke

Beilstein J. Nanotechnol. 2016, 7, 236–245, doi:10.3762/bjnano.7.22

• dependence is characteristic of a first-order transition. Unfortunately, the domains appearing in the two-phase coexistence region are too small for the lateral resolution of our BAM instrument (about 2 µm), and therefore we were not able to follow the nucleation and growth processes associated with the LE

• . The lateral resolution is ca. 2 µm. Grazing incidence X-ray diffraction (GIXD) Grazing incidence X-ray diffraction (GIXD) experiments were performed at the beamlines BW1 at DESY, Hamburg, Germany, and ID10 at the ERSF, Grenoble, France. The setup includes a Langmuir trough, equipped with one moveable

Orthogonal chemical functionalization of patterned gold on silica surfaces

• Francisco Palazon,
• Didier Léonard,
• Thierry Le Mogne,
• Francesca Zuttion,
• Céline Chevalier,
• Magali Phaner-Goutorbe,
• Éliane Souteyrand,
• Yann Chevolot and
• Jean-Pierre Cloarec

Beilstein J. Nanotechnol. 2015, 6, 2272–2277, doi:10.3762/bjnano.6.233

• gun (ion current of 2 nA). Areas of 300 × 300 µm were scanned. Under the present operation conditions, the lateral resolution is on the order of 1 μm. Submicron resolution can be achieved, albeit hindering mass resolution. The ion dose was kept below the static conditions limits. The data were

Kelvin probe force microscopy for local characterisation of active nanoelectronic devices

• Tino Wagner,
• Hannes Beyer,
• Patrick Reissner,
• Philipp Mensch,
• Heike Riel,
• Bernd Gotsmann and
• Andreas Stemmer

Beilstein J. Nanotechnol. 2015, 6, 2193–2206, doi:10.3762/bjnano.6.225

• lateral resolution and pronounced capacitive averaging of the locally measured contact potential difference. Furthermore, local changes in the strength of the electrostatic interaction between tip and surface easily lead to topography crosstalk seen in the surface potential. To take full advantage of the

• compensated. The scan at elevated height, however, reduces lateral resolution and accuracy of the KFM data as we will detail below. To minimise such lateral averaging, single-scan methods are preferred, performing topography and KFM measurements simultaneously. An additional benefit of single-scan AFM and KFM

• the main reason for the notoriously low lateral resolution and poor potential accuracy in this mode. When comparing AM and FM modes, one should note that in lift-mode AM-KFM the cantilever is not oscillating anymore when the electrostatic forces are nullified, whereas the mechanical oscillation

Continuum models of focused electron beam induced processing

• Milos Toth,
• Charlene Lobo,
• Vinzenz Friedli,
• Aleksandra Szkudlarek and
• Ivo Utke

Beilstein J. Nanotechnol. 2015, 6, 1518–1540, doi:10.3762/bjnano.6.157

• dimensionless parameters, originally employed by Utke et al. [15], which are useful for describing adsorbate kinetics in FEBIP [1] and giving concise scaling laws for the lateral resolution of the FEBIP process. Irradiative depletion is a dimensionless parameter that quantifies the adsorbate concentration at

• dimensionless (normalized) version of the Gaussian or tophat electron electron flux profile given by Equation 8 or Equation 9, respectively, and is given by: The lateral resolution can be quantified by the dimensionless parameter , expressed as the ratio of the diameter of the deposit (FWHMD) and the electron

• irradiative depletion the resolution parameter is equal to 1, giving the highest possible FEBIP resolution (i.e., the smallest possible deposit size in the case of FEBID). In other words, the reaction limited (electron-limited) regime gives better lateral resolution than the mass transport limited (adsorbate

Formation of pure Cu nanocrystals upon post-growth annealing of Cu–C material obtained from focused electron beam induced deposition: comparison of different methods

• Aleksandra Szkudlarek,
• Alfredo Rodrigues Vaz,
• Yucheng Zhang,
• Andrzej Rudkowski,
• Czesław Kapusta,
• Rolf Erni,
• Stanislav Moshkalev and
• Ivo Utke

Beilstein J. Nanotechnol. 2015, 6, 1508–1517, doi:10.3762/bjnano.6.156

• with a high aspect ratio makes FEBID suitable for fabrication of high resolution probes to scanning magnetic force microscopy (MFM) [17][18][19]. Purification methods of FEBID structures For FEBID direct-write nanostructures lateral resolution can be well-controlled by adjusting the beam and gas flow

Peptide-equipped tobacco mosaic virus templates for selective and controllable biomineral deposition

• Klara Altintoprak,
• Axel Seidenstücker,
• Alexander Welle,
• Sabine Eiben,
• Petia Atanasova,
• Nina Stitz,
• Alfred Plettl,
• Joachim Bill,
• Hartmut Gliemann,
• Holger Jeske,
• Dirk Rothenstein,
• Fania Geiger and
• Christina Wege

Beilstein J. Nanotechnol. 2015, 6, 1399–1412, doi:10.3762/bjnano.6.145

• detectable by electron-optical imaging). The low SIMS Si+ and SiOH+ signal intensities, and the necessary high mass resolution for unambiguous fragment assignments, precluded SIMS imaging with high lateral resolution. Hence, the obtained SIMS data cannot visualize mineralized individual TMV particles or

• reflection-type time-of-flight analyzer. The UHV base pressure was <5 × 10−9 mbar. For high mass resolution, the Bi source was operated in the “high current bunched” mode, providing short Bi1+ primary ion pulses at 25 keV energy and a lateral resolution of approximately 4 μm. The short pulse length of 0.6 to

Surface excitations in the modelling of electron transport for electron-beam-induced deposition experiments

• Francesc Salvat-Pujol,
• Roser Valentí and
• Wolfgang S. Werner

Beilstein J. Nanotechnol. 2015, 6, 1260–1267, doi:10.3762/bjnano.6.129

• the emitted secondary electrons influence the growth of the nanostructures, the latter electrons being responsible for the lateral resolution [3]. In the modelling of electron transport for FEBID [2][3][4][5][6][7], electron stopping is described on the basis of properties that are applicable in the

High sensitivity and high resolution element 3D analysis by a combined SIMS–SPM instrument

• Yves Fleming and
• Tom Wirtz

Beilstein J. Nanotechnol. 2015, 6, 1091–1099, doi:10.3762/bjnano.6.110

• choice for high sensitivity analysis, including isotopic ratio measurements [2][3]. State-of-the-art SIMS imaging instruments can provide chemical 2D and 3D maps with a lateral resolution of around 50 nm [4][5]. However, several important artefacts result from the fact that conventional 3D image

Fundamental edge broadening effects during focused electron beam induced nanosynthesis

• Roland Schmied,
• Jason D. Fowlkes,
• Robert Winkler,
• Phillip D. Rack and
• Harald Plank

Beilstein J. Nanotechnol. 2015, 6, 462–471, doi:10.3762/bjnano.6.47

• more complex proximity effects that significantly reduce lateral edge sharpness and thus should be avoided if desiring high lateral resolution. Keywords: focused electron beam induced deposition; nanofabrication; platinum; simulation; Introduction Focused electron beam induced deposition (FEBID) has

• avoided when aiming for highest lateral resolution (see also Figure 5c). Conclusion In conclusion, we have qualitatively studied side-wall broadening effects for three-dimensional FEBID deposits using MeCpPt(IV)Me3 precursor on Si–SiO2 substrates. It is found that highest primary electron energies lead to

• sharpness and by that lateral resolution (see Figure S4, Supporting Information File 1). (a) Classification of proximal shapes (right hand side). The grey box indicates the intended deposit while the black curve schematically summarizes the proximal effects. The left hand side indicates the different

A scanning probe microscope for magnetoresistive cantilevers utilizing a nested scanner design for large-area scans

• Tobias Meier,
• Alexander Förste,
• Ali Tavassolizadeh,
• Karsten Rott,
• Dirk Meyners,
• Roland Gröger,
• Günter Reiss,
• Eckhard Quandt,
• Thomas Schimmel and
• Hendrik Hölscher

Beilstein J. Nanotechnol. 2015, 6, 451–461, doi:10.3762/bjnano.6.46

• smoothness of motion in comparison with motorized stages, their maximum extension remains limited to hundreds of micrometers by using mechanical levers for motion amplification. Additionally, a large scan range and a high lateral resolution are contradictory. Because of these challenges, previous attempts to

• sensitivity and the feedback mechanism when using TMR sensors on AFM cantilevers, we fabricated tipless cantilevers and obtained a suitable resolution on gratings [35]. To increase the lateral resolution, however, sharp tips have to be attached to our cantilevers with TMR sensors. By using a combination of

• focused ion beam and electron beam deposition, tips can be manually been grown on the apex of the cantilever [59]. The use of such tips enables high lateral resolution as tip radii as small as 30 nm can be achieved. The advantage of this approach is that the tip is subsequently grown and without altering

Influence of spurious resonances on the interaction force in dynamic AFM

• Luca Costa and
• Mario S. Rodrigues

Beilstein J. Nanotechnol. 2015, 6, 420–427, doi:10.3762/bjnano.6.42

• its flexibility, amplitude modulation AFM (AM-AFM) [3] has become successful and widely employed to characterize surfaces at the nanoscale. It has continuously evolved in terms of achievable lateral resolution and scan speed, producing impressive results both at solid/gas interfaces under ambient

Nanometer-resolved mechanical properties around GaN crystal surface steps

• Jörg Buchwald,
• Marina Sarmanova,
• Bernd Rauschenbach and
• Stefan G. Mayr

Beilstein J. Nanotechnol. 2014, 5, 2164–2170, doi:10.3762/bjnano.5.225

• films were undertaken. CR-AFM is a technique for evaluating the mechanical properties of a broad range of materials while using one of the highest lateral resolution available, compared to other recent methods [1][2][22][23]. The investigated sample was an epitaxial c-plane GaN film grown on a 6H-SiC

Cathode lens spectromicroscopy: methodology and applications

• T. O. Menteş,
• G. Zamborlini,
• A. Sala and
• A. Locatelli

Beilstein J. Nanotechnol. 2014, 5, 1873–1886, doi:10.3762/bjnano.5.198

• aperture on the desired beam. The resulting real space image gives a direct map of the corresponding structure. No intensity is seen elsewhere, except that originating from the diffuse background of the primary diffracted beam. The lateral resolution is comparable to that of the bright field mode, and the

• an inverse Å. The lateral resolution is comparable to that of the normal XPEEM operation, well below the micrometer scale. Therefore, dark-field XPEEM makes it possible to probe the electronic structure of small features, which cannot be distinguished in the μ-ARPES mode. The SPELEEM at Elettra

• be about 150 meV. Lateral resolution. The SPELEEM spatial resolution is mainly determined by the spherical and chromatic aberrations of the objective lens. LEEM performs better compared to XPEEM. Low energy electron diffraction beams are generally much sharper than the broad photoelectron emission

In vitro interaction of colloidal nanoparticles with mammalian cells: What have we learned thus far?

• Moritz Nazarenus,
• Qian Zhang,
• Mahmoud G. Soliman,
• Pablo del Pino,
• Beatriz Pelaz,
• Susana Carregal-Romero,
• Joanna Rejman,
• Barbara Rothen-Rutishauser,
• Martin J. D. Clift,
• Reinhard Zellner,
• G. Ulrich Nienhaus,
• James B. Delehanty,
• Igor L. Medintz and
• Wolfgang J. Parak

Beilstein J. Nanotechnol. 2014, 5, 1477–1490, doi:10.3762/bjnano.5.161

• organelles are only of limited value if the fraction of NPs that resides in these organelles is not quantified. Quantification, however, is not as trivial as it seems, and there is a need for better quantitative techniques for the future. While TEM offers the lateral resolution to visualize individual NPs

• the limited lateral resolution of optical microscopy [70]. In addition, as mentioned before, NPs can be partly degraded after having been internalized [71][72] and thus, in case fluorescently labeled NPs are used, it is required to prove that the fluorescence (or any other) label is still attached to

• , labelled with different fluorophores (green and magenta)) after 24 h of incubation at a concentration of 1 µg/mL, which are located in individual vesicles. Nuclei are stained with DAPI (blue) and the cell membrane with Wheat Germ Agglutinin (red). Note that due to limited lateral resolution of optical

Probing the electronic transport on the reconstructed Au/Ge(001) surface

• Franciszek Krok,
• Mark R. Kaspers,
• Alexander M. Bernhart,
• Marek Nikiel,
• Benedykt R. Jany,
• Paulina Indyka,
• Mateusz Wojtaszek,
• Rolf Möller and
• Christian A. Bobisch

Beilstein J. Nanotechnol. 2014, 5, 1463–1471, doi:10.3762/bjnano.5.159

• transport phenomena of conducting surfaces at the limit of lateral resolution. By performing scanning tunnelling potentiometry (STP) [11] we tried to study the lateral variation of the electrochemical potential µec (called potential in the following) at the boundary between two rotated Au wire-like domains

Near-field photochemical and radiation-induced chemical fabrication of nanopatterns of a self-assembled silane monolayer

• Ulrich C. Fischer,
• Carsten Hentschel,
• Florian Fontein,
• Linda Stegemann,
• Christiane Hoeppener,
• Harald Fuchs and
• Stefanie Hoeppener

Beilstein J. Nanotechnol. 2014, 5, 1441–1449, doi:10.3762/bjnano.5.156

• fluorescein-stained APTES SAMs clearly reveal the typical periodicity of the expected pattern (Figure 4d). The fact that even the weak topographic features of the fluorescein-labeled APTES-SAM nanopattern can be detected with the AFM at high lateral resolution indicates, that the masks lead to a very strong

• nanopatterns as evidenced by the detection of even the topographic features at a lateral resolution of 30 nm formed by the fluorescein-labeled 0.22 µm pattern. The use of mechanically rather stable, chemically bound SAMs as substrates for the processes [27][28] facilitates the procedures for contacting and

Electron-beam induced deposition and autocatalytic decomposition of Co(CO)₃NO

• Florian Vollnhals,
• Martin Drost,
• Fan Tu,
• Esther Carrasco,
• Andreas Späth,
• Rainer H. Fink,
• Hans-Peter Steinrück and
• Hubertus Marbach

Beilstein J. Nanotechnol. 2014, 5, 1175–1185, doi:10.3762/bjnano.5.129

• interferometric control through the focal spot, while the transmitted photon intensity is recorded by using a photo multiplier tube. Near-edge X-ray absorption fine structure (NEXAFS) spectra were recorded by consecutive scanning of the investigated area with varying photon energy. The lateral resolution in