Direct writing of gold nanostructures with an electron beam: On the way to pure nanostructures by combining optimized deposition with oxygen-plasma treatment

• Domagoj Belić,
• Mostafa M. Shawrav,
• Emmerich Bertagnolli and
• Heinz D. Wanzenboeck

Beilstein J. Nanotechnol. 2017, 8, 2530–2543, doi:10.3762/bjnano.8.253

• recently utilized FEBID of Au to directly write metal-oxide-semiconductor capacitors [41] and to deposit Au nanocatalyst templates for Si nanowire syntheses [42]. The main issue which is hindering the widespread use of FEBID is the low Au content in the produced nanostructures: when using the common

Metal oxide nanostructures: preparation, characterization and functional applications as chemical sensors

• Dario Zappa,
• Angela Bertuna,
• Elisabetta Comini,
• Navpreet Kaur,
• Nicola Poli,
• Veronica Sberveglieri and
• Giorgio Sberveglieri

Beilstein J. Nanotechnol. 2017, 8, 1205–1217, doi:10.3762/bjnano.8.122

• of Nb2O5. Theoretical calculations have shown that the response of p-type metal oxide semiconductors toward a specific target compound should be equal to the square root of that of an n-type metal oxide semiconductor under the same conditions (morphology, structure). This is due to the intrinsic

The integration of graphene into microelectronic devices

• Guenther Ruhl,
• Sebastian Wittmann,
• Matthias Koenig and
• Daniel Neumaier

Beilstein J. Nanotechnol. 2017, 8, 1056–1064, doi:10.3762/bjnano.8.107

• aspects of the integration of graphene into complementary metal-oxide semiconductor (CMOS) compatible electronic devices. Review 1 Deposition of graphene Graphene films can synthesized in numerous ways, such as mechanical exfoliation, liquid-phase exfoliation, assembly of tailored precursor molecules

Impact of contact resistance on the electrical properties of MoS₂ transistors at practical operating temperatures

• Filippo Giannazzo,
• Gabriele Fisichella,
• Aurora Piazza,
• Salvatore Di Franco,
• Giuseppe Greco,
• Simonpietro Agnello and
• Fabrizio Roccaforte

Beilstein J. Nanotechnol. 2017, 8, 254–263, doi:10.3762/bjnano.8.28

• at the interface, it is worth comparing the experimental value with the one deduced from theoretical expression of the flat band voltage (VFB,id) of an ideal metal-oxide-semiconductor field effect transistor (i.e., without fixed or interface charges). VFB,id is expressed as [15]: where WM is the work

Low temperature co-fired ceramic packaging of CMOS capacitive sensor chip towards cell viability monitoring

• Niina Halonen,
• Joni Kilpijärvi,
• Maciej Sobocinski,
• Timir Datta-Chaudhuri,
• Antti Hassinen,
• Someshekar B. Prakash,
• Peter Möller,
• Pamela Abshire,
• Sakari Kellokumpu and
• Anita Lloyd Spetz

Beilstein J. Nanotechnol. 2016, 7, 1871–1877, doi:10.3762/bjnano.7.179

• was probably made too hastily based on our current knowledge of the LTCC material. We recently reported on an LTCC package that was flip-chip bonded to a complementary metal-oxide semiconductor (CMOS) integrated circuit (IC) chip to form a LoCMOS system [23]. It was designed with a CMOS chip for

Fabrication and properties of luminescence polymer composites with erbium/ytterbium oxides and gold nanoparticles

• Julia A. Burunkova,
• Ihor Yu. Denisiuk,
• Dmitri I. Zhuk,
• Lajos Daroczi,
• Attila Csik,
• István Csarnovics and
• Sándor Kokenyesi

Beilstein J. Nanotechnol. 2016, 7, 630–636, doi:10.3762/bjnano.7.55

• telecommunication window at 1.54 µm, as well as for efficient optical amplification elements. For example, silicon oxides (SiOx) and silicon nitrides (SiNx) doped with Er can be integrated in a metal-oxide-semiconductor structure and used as infrared light sources or amplifiers in telecommunication systems [1

Possibilities and limitations of advanced transmission electron microscopy for carbon-based nanomaterials

• Xiaoxing Ke,
• Carla Bittencourt and
• Gustaaf Van Tendeloo

Beilstein J. Nanotechnol. 2015, 6, 1541–1557, doi:10.3762/bjnano.6.158

• metal-oxide semiconductor) sensor up to 1600 fps [50]. The high sensitivity and fast acquisition in detecting has made possible the automated and ultra-fast acquisition of a series of under-exposed images from the same region. After drift correction, the images of such a sequence are stacked and can

Effects of swift heavy ion irradiation on structural, optical and photocatalytic properties of ZnO–CuO nanocomposites prepared by carbothermal evaporation method

• Sini Kuriakose,
• D. K. Avasthi and
• Satyabrata Mohapatra

Beilstein J. Nanotechnol. 2015, 6, 928–937, doi:10.3762/bjnano.6.96

• 1D and 2D metal-oxide semiconductor nanostructures with higher surface area for efficient adsorption of dye molecules and optimal defect concentration, crystallinity and band gap are important for developing advanced photocatalytic coatings. In this work, we demonstrate that swift heavy ion

Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

• Jacques Perrin Toinin,
• Alain Portavoce,
• Khalid Hoummada,
• Michaël Texier,
• Maxime Bertoglio,
• Sandrine Bernardini,
• Marco Abbarchi and
• Lee Chow

Beilstein J. Nanotechnol. 2015, 6, 336–342, doi:10.3762/bjnano.6.32

• is compatible with complementary metal oxide semiconductor (CMOS) technology, the production of porous Ge thin films could be used for integration of optoelectronic devices in Si microelectronic technology. The production of porous Ge can be performed using several techniques such as anodization and

Comparative evaluation of the impact on endothelial cells induced by different nanoparticle structures and functionalization

• Lisa Landgraf,
• Ines Müller,
• Peter Ernst,
• Miriam Schäfer,
• Christina Rosman,
• Isabel Schick,
• Oskar Köhler,
• Hartmut Oehring,
• Vladimir V. Breus,
• Thomas Basché,
• Carsten Sönnichsen,
• Wolfgang Tremel and
• Ingrid Hilger

Beilstein J. Nanotechnol. 2015, 6, 300–312, doi:10.3762/bjnano.6.28

• investigations revealed that the most important factors affecting cell viability and internalization by human cells are the type of metal (e.g., inorganic noble metal, metal oxide, semiconductor nanoparticles), the shape (e.g., rods, spheres, asymmetric assemblies) and the surface charge (negative, neutral or

Electrical contacts to individual SWCNTs: A review

• Wei Liu,
• Christofer Hierold and
• Miroslav Haluska

Beilstein J. Nanotechnol. 2014, 5, 2202–2215, doi:10.3762/bjnano.5.229

• solution to the problem of undesirable, short-channel effects occurring in metal oxide semiconductor field-effect transistors (MOSFETs) on the order of tens of nanometers [8]. Furthermore, the diameter-normalized charge carrier density in sub-10 nm CNFETs is four times higher than for silicon-based devices

Room temperature, ppb-level NO₂ gas sensing of multiple-networked ZnSe nanowire sensors under UV illumination

• Sunghoon Park,
• Soohyun Kim,
• Wan In Lee,
• Kyoung-Kook Kim and
• Chongmu Lee

Beilstein J. Nanotechnol. 2014, 5, 1836–1841, doi:10.3762/bjnano.5.194

• -dimensionally (1D) nanostructured, metal oxide semiconductor sensors have been studied extensively because of the associated higher sensitivity due to the high surface-to-volume ratios as compared to thin film gas sensors [8][9][10][11][12][13]. Most metal oxides exhibit some sensitivity to many gases at high

• the response of the nanosensor to NO2 gas. Table 1 compares the responses of the ZnSe nanowires towards NO2 synthesized in this study with those of metal oxide semiconductor, 1D nanostructures reported in the literature. The response of the ZnSe nanowires to NO2 gas with a lower concentration obtained

Silicon and germanium nanocrystals: properties and characterization

• Ivana Capan,
• Alexandra Carvalho and
• José Coutinho

Beilstein J. Nanotechnol. 2014, 5, 1787–1794, doi:10.3762/bjnano.5.189

• metal oxide semiconductor (MOS) field effect transistors and memory devices makes memory less sensitive to common problems such as leakage current and dielectric breakdown and allows for an ultimate miniaturization without electrical instabilities [1]. Moreover, nanostructures offer significant

An analytical approach to evaluate the performance of graphene and carbon nanotubes for NH₃ gas sensor applications

• Elnaz Akbari,
• Vijay K. Arora,
• Aria Enzevaee,
• Mohamad. T. Ahmadi,
• Mehdi Saeidmanesh,
• Mohsen Khaledian,
• Hediyeh Karimi and
• Rubiyah Yusof

Beilstein J. Nanotechnol. 2014, 5, 726–734, doi:10.3762/bjnano.5.85

• quite similar to the conventional metal-oxide semiconductor field effect transistor (MOSFET), which comprises source and drain electrodes with the gate insulator inducing the channel of carriers and a silicon back gate [22][23] to augment the carrier density or adjust the threshold voltage. A CNT

High-resolution electrical and chemical characterization of nm-scale organic and inorganic devices

• Pierre Eyben

Beilstein J. Nanotechnol. 2013, 4, 318–319, doi:10.3762/bjnano.4.35

• Pierre Eyben IMEC VZW, Kapeldreef 75, 3001 Leuven, Belgium 10.3762/bjnano.4.35 Almost ever since the advent of the microelectronics adventure, silicon-based MOSFET (metal–oxide–semiconductor field-effect transistor) technology has been largely dominant. However, for a few years now this

A look underneath the SiO₂/4H-SiC interface after N₂O thermal treatments

• Patrick Fiorenza,
• Filippo Giannazzo,
• Lukas K. Swanson,
• Alessia Frazzetto,
• Simona Lorenti,
• Mario S. Alessandrino and
• Fabrizio Roccaforte

Beilstein J. Nanotechnol. 2013, 4, 249–254, doi:10.3762/bjnano.4.26

• incorporation of electrically active nitrogen-related donors, which compensate the p-type doping in the SiC surface region. Cross-sectional SCM measurements on SiO2/4H-SiC metal/oxide/semiconductor (MOS) devices highlighted different active carrier concentration profiles in the first 10 nm underneath the

• : 4H-SiC; metal/oxide/semiconductor; nitrogen incorporation; Introduction The SiO2/4H-SiC interface is the main building block of SiC-based MOSFET devices and its electrostructural quality typically has a direct impact on the device performance in power-electronics applications. In particular

• (≈1017 cm−3) 4H-SiC exposed to ambient N2O through a 30 nm thick gate oxide, to simulate the real metal/oxide/semiconductor stack used in the MOSFET device. To evaluate the impact of 4H-SiC surface morphology on the nitrogen incorporation, SiC samples with properly prepared flat or faceted surfaces were

Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography

• Farhad Larki,
• Arash Dehzangi,
• Alam Abedini,
• Ahmad Makarimi Abdullah,
• Elias Saion,
• Sabar D. Hutagalung,
• Mohd N. Hamidon and
• Jumiah Hassan

Beilstein J. Nanotechnol. 2012, 3, 817–823, doi:10.3762/bjnano.3.91

• structures using 3-D TCAD simulation results. The analysis presented shows that the device can be considered as a simple FET device that includes no doping concentration gradient and no junction. Unlike the accumulation metal–oxide–semiconductor field-effect transistors (AMOSFETs) and junctionless nanowire

Functionalised zinc oxide nanowire gas sensors: Enhanced NO₂ gas sensor response by chemical modification of nanowire surfaces

• Eric R. Waclawik,
• Jin Chang,
• Andrea Ponzoni,
• Isabella Concina,
• Dario Zappa,
• Elisabetta Comini,
• Nunzio Motta,
• Guido Faglia and
• Giorgio Sberveglieri

Beilstein J. Nanotechnol. 2012, 3, 368–377, doi:10.3762/bjnano.3.43

• chemisorption involves electronic charge transfer, functionalisation of the surface of a metal-oxide semiconductor gas sensor with an organic monolayer will strongly influence the electronic properties of the surface. Transfer of electron density into the semiconductor will reduce the depletion layer, which is

Enhanced visible light photocatalysis through fast crystallization of zinc oxide nanorods

• Sunandan Baruah,
• Mohammad Abbas Mahmood,
• Myo Tay Zar Myint,
• Tanujjal Bora and
• Joydeep Dutta

Beilstein J. Nanotechnol. 2010, 1, 14–20, doi:10.3762/bjnano.1.3

• semiconductor undergo redox reactions with molecules adsorbed onto the surface, thereby breaking them into smaller fragments. Photocatalysis with metal-oxide-semiconductor nanostructures has been an area of intense research over the last couple of decades with titania (TiO2) receiving the most attention [1][2