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Search for "resistivity" in Full Text gives 222 result(s) in Beilstein Journal of Nanotechnology. Showing first 200.

Porous silver-coated pNIPAM-co-AAc hydrogel nanocapsules

  • William W. Bryan,
  • Riddhiman Medhi,
  • Maria D. Marquez,
  • Supparesk Rittikulsittichai,
  • Michael Tran and
  • T. Randall Lee

Beilstein J. Nanotechnol. 2019, 10, 1973–1982, doi:10.3762/bjnano.10.194

Graphical Abstract
  • nitrate (AgNO3, Strem), and ethanol (Aaper). N-Isopropylacrylamide (NIPAM, 99%) and acrylic acid (AAc, 99.5%) were obtained from Acros. Water was purified to a resistivity of 18.2 MΩ cm (Academic Milli-Q Water System; Millipore Corporation) and filtered using a 0.22 μm filter to remove any impurities. All
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Published 04 Oct 2019

Nanoarchitectonics meets cell surface engineering: shape recognition of human cells by halloysite-doped silica cell imprints

  • Elvira Rozhina,
  • Ilnur Ishmukhametov,
  • Svetlana Batasheva,
  • Farida Akhatova and
  • Rawil Fakhrullin

Beilstein J. Nanotechnol. 2019, 10, 1818–1825, doi:10.3762/bjnano.10.176

Graphical Abstract
  • Tetraethoxysilane (TEOS), poly(acrylamide-co-diallyldimethylammonium chloride) (P(AAm-co-DADMAC), rhodamine B, poly(allylamine hydrochloride) (РАН) were purchased from Sigma-Aldrich. Millipore water (specific resistivity 18 MΩ·cm at 25 °C) was used in all experiments. Halloysite nanotubes (HNTs) of 95–98% purity
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Published 04 Sep 2019

Biocatalytic oligomerization-induced self-assembly of crystalline cellulose oligomers into nanoribbon networks assisted by organic solvents

  • Yuuki Hata,
  • Yuka Fukaya,
  • Toshiki Sawada,
  • Masahito Nishiura and
  • Takeshi Serizawa

Beilstein J. Nanotechnol. 2019, 10, 1778–1788, doi:10.3762/bjnano.10.173

Graphical Abstract
  • -dihydroxybenzoic acid, and D2O were purchased from Sigma-Aldrich. Dotite was purchased from Nisshin EM Corporation. All other reagents were purchased from Nacalai Tesque. Ultrapure water with a resistivity greater than 18.2 MΩ cm was supplied by a Milli-Q Advantage A-10 apparatus (Merck Millipore) and used
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Published 26 Aug 2019

Layered double hydroxide/sepiolite hybrid nanoarchitectures for the controlled release of herbicides

  • Ediana Paula Rebitski,
  • Margarita Darder and
  • Pilar Aranda

Beilstein J. Nanotechnol. 2019, 10, 1679–1690, doi:10.3762/bjnano.10.163

Graphical Abstract
  • %, Fluka), MgCl2·6H2O (99%, Carlo Erba), NaOH (≥98%, Fluka), ZnCl2 (>98%, Fluka). Deionized water (resistivity = 18.2 MΩ·cm) was obtained with a Maxima Ultrapure Water from Elga. Preparation of MCPA-LDH/sepiolite nanoarchitectures MgAl-LDH/sepiolite (LDH/Sep) nanoarchitectures were prepared following the
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Published 09 Aug 2019

Superconducting switching due to a triplet component in the Pb/Cu/Ni/Cu/Co2Cr1−xFexAly spin-valve structure

  • Andrey Andreevich Kamashev,
  • Nadir Nurgayazovich Garif’yanov,
  • Aidar Azatovich Validov,
  • Joachim Schumann,
  • Vladislav Kataev,
  • Bernd Büchner,
  • Yakov Victorovich Fominov and
  • Ilgiz Abdulsamatovich Garifullin

Beilstein J. Nanotechnol. 2019, 10, 1458–1463, doi:10.3762/bjnano.10.144

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  • magnetic field of 3 kOe possibly due to some magnetic inhomogeneity of the HA layer. We note that the magnetic response from the Ni layer cannot be resolved here due to its small value. The electrical resistivity was measured using the standard four-point method. The top insulating layer (Si3N4) was
  • mechanically removed from the areas where the golden wires should be attached using a silver paste. The quality of the Pb layer can be judged from the residual resistivity ratio (RRR): Here, R(T) is the measured resistance at a given temperature T, ρph(300 K) is the phonon contribution to the specific
  • resistivity at 300 K, and ρ(10 K) is the residual resistivity at 10 K (i.e., above Tc). For our samples this ratio amounted to RRR = 10–12, which corresponds to a SC coherence length of ξS = 41–45 nm (for details see [21]). The critical temperature Tc is defined as the midpoint of the SC transition curve. Its
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Published 19 Jul 2019

Kelvin probe force microscopy of the nanoscale electrical surface potential barrier of metal/semiconductor interfaces in ambient atmosphere

  • Petr Knotek,
  • Tomáš Plecháček,
  • Jan Smolík,
  • Petr Kutálek,
  • Filip Dvořák,
  • Milan Vlček,
  • Jiří Navrátil and
  • Čestmír Drašar

Beilstein J. Nanotechnol. 2019, 10, 1401–1411, doi:10.3762/bjnano.10.138

Graphical Abstract
  • harm to other transport parameters. The characterization of NIs or NPs in TE materials is realized most frequently by the different modes of atomic force microscopy (AFM): i) by comparing the conductivity/resistivity (CAFM) or I–V curves measurement in the direct-contact of the conductive tip and the
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Published 15 Jul 2019

A silver-nanoparticle/cellulose-nanofiber composite as a highly effective substrate for surface-enhanced Raman spectroscopy

  • Yongxin Lu,
  • Yan Luo,
  • Zehao Lin and
  • Jianguo Huang

Beilstein J. Nanotechnol. 2019, 10, 1270–1279, doi:10.3762/bjnano.10.126

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  • in all the experiments was purified by using a Milli-Q Advantage A10 system (Millipore, Bedford, MA, USA) with a resistivity higher than 18.2 MΩ·cm. Fabrication of the paper-based Ag-NP/cellulose-NF composites The silver nanoparticles (Ag-NPs) were deposited onto the surface of the cellulose
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Published 24 Jun 2019

Synthesis of MnO2–CuO–Fe2O3/CNTs catalysts: low-temperature SCR activity and formation mechanism

  • Yanbing Zhang,
  • Lihua Liu,
  • Yingzan Chen,
  • Xianglong Cheng,
  • Chengjian Song,
  • Mingjie Ding and
  • Haipeng Zhao

Beilstein J. Nanotechnol. 2019, 10, 848–855, doi:10.3762/bjnano.10.85

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  • (NO3)2·3H2O (AR), Fe(NO3)·9H2O (AR) and ethanol (AR) were purchased from Shanghai Chemical Reagent Ltd. All chemical were used without further purification. Deionized water with a resistivity above 18.0 MΩ·cm was obtained from a JL-RO100 Millipore-Q Plus. Modification of CNTs and the synthesis of MnO2
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Published 11 Apr 2019

Features and advantages of flexible silicon nanowires for SERS applications

  • Hrvoje Gebavi,
  • Vlatko Gašparić,
  • Dubravko Risović,
  • Nikola Baran,
  • Paweł Henryk Albrycht and
  • Mile Ivanda

Beilstein J. Nanotechnol. 2019, 10, 725–734, doi:10.3762/bjnano.10.72

Graphical Abstract
  • ]. In short, Si wafers (<100> orientation, 5–10 Ω·cm resistivity, p-type) were cleaned following the standard RCA (Radio Corporation of America) cleaning processes [24], followed by Au sputtering in a Polaron E5000 sputter coater at ca. 5·10−4 mbar work pressure. Prior to VLS synthesis, annealing in
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Published 15 Mar 2019

Enhancement in thermoelectric properties due to Ag nanoparticles incorporated in Bi2Te3 matrix

  • Srashti Gupta,
  • Dinesh Chandra Agarwal,
  • Bathula Sivaiah,
  • Sankarakumar Amrithpandian,
  • Kandasami Asokan,
  • Ajay Dhar,
  • Binaya Kumar Panigrahi,
  • Devesh Kumar Avasthi and
  • Vinay Gupta

Beilstein J. Nanotechnol. 2019, 10, 634–643, doi:10.3762/bjnano.10.63

Graphical Abstract
  • conductivity with increase in Ag content in Bi2Te3 may be due to the enhanced carrier scattering at the interfaces of metal and semiconductor [20] and due to the presence of oxygen in all samples. An earlier report also suggests that the electrical resistivity of PbTe can increase up to 2–3 orders of magnitude
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Published 04 Mar 2019

Effects of post-lithography cleaning on the yield and performance of CVD graphene-based devices

  • Eduardo Nery Duarte de Araujo,
  • Thiago Alonso Stephan Lacerda de Sousa,
  • Luciano de Moura Guimarães and
  • Flavio Plentz

Beilstein J. Nanotechnol. 2019, 10, 349–355, doi:10.3762/bjnano.10.34

Graphical Abstract
  • holes. Figure 5 shows that graphene conductivity, σ, behaves as a sublinear function of the gate voltage, Vg. This sublinear behavior is associated to a weak-point disorder in graphene, which emerges as a carrier density independent residual resistivity, ρs. The strong disorder and the charged-impurity
  • disorder are responsible for the resistivity (μne)−1, in which μ is the mobility and n is the carrier density [8][21]. Since n = αVg, where α = 7.2 × 1010 cm−2, we were able to find the resistivity ρs that linearizes the relation where ρ = 1/σ is the measured resistivity of graphene [24]. Then, the
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Published 05 Feb 2019

Relation between thickness, crystallite size and magnetoresistance of nanostructured La1−xSrxMnyO3±δ films for magnetic field sensors

  • Rasuole Lukose,
  • Valentina Plausinaitiene,
  • Milita Vagner,
  • Nerija Zurauskiene,
  • Skirmantas Kersulis,
  • Virgaudas Kubilius,
  • Karolis Motiejuitis,
  • Birute Knasiene,
  • Voitech Stankevic,
  • Zita Saltyte,
  • Martynas Skapas,
  • Algirdas Selskis and
  • Evaldas Naujalis

Beilstein J. Nanotechnol. 2019, 10, 256–261, doi:10.3762/bjnano.10.24

Graphical Abstract
  • ]. Transport and magnetoresistive properties In nanostructured manganite materials the difference in dimensions of crystallites and change of the relative amount of grain boundaries (GBs) and film composition significantly change the transport behaviour [17][21]. The decrease of electrical resistivity and the
  • resistivity values were observed for the I series films (Figure 3b insert) due to smaller crystallites (Figure 4a,b) and larger number of GBs. The average crystallite diameter of 56 nm and 69 nm was found for the I and II series (Figure 4c), respectively. The technological processing and decrease of the
  • resistivity, respectively) with film thickness was observed (Figure 4d,e). The largest MR magnitude (6%, when the field was directed parallel to the film plane B|| = 0.7 T) was obtained for the thickest films (≈400 nm) of the II series. The measured MR values of this II series films at room temperature are
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Published 23 Jan 2019

Interaction of Te and Se interlayers with Ag or Au nanofilms in sandwich structures

  • Arkadiusz Ciesielski,
  • Lukasz Skowronski,
  • Marek Trzcinski,
  • Ewa Górecka,
  • Wojciech Pacuski and
  • Tomasz Szoplik

Beilstein J. Nanotechnol. 2019, 10, 238–246, doi:10.3762/bjnano.10.22

Graphical Abstract
  • spectra for samples measured two and four weeks after deposition is that for the latter, the contribution from the Drude term increases significantly, which results in higher values of Im(ε) in the long wavelength range. Since the Drude term is strictly connected to the sample resistivity, it suggests
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Published 21 Jan 2019

Bidirectional biomimetic flow sensing with antiparallel and curved artificial hair sensors

  • Claudio Abels,
  • Antonio Qualtieri,
  • Toni Lober,
  • Alessandro Mariotti,
  • Lily D. Chambers,
  • Massimo De Vittorio,
  • William M. Megill and
  • Francesco Rizzi

Beilstein J. Nanotechnol. 2019, 10, 32–46, doi:10.3762/bjnano.10.4

Graphical Abstract
  • circuit was excited with Vexc = +3.3 V DC, while its voltage output was connected to a benchtop digital multimeter (Agilent 34405A). Influence of temperature on micro strain gauges As electrical resistivity of metals is temperature-dependent, a drift in the offset voltage may occur while the flow sensor
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Published 03 Jan 2019

Zn/F-doped tin oxide nanoparticles synthesized by laser pyrolysis: structural and optical properties

  • Florian Dumitrache,
  • Iuliana P. Morjan,
  • Elena Dutu,
  • Ion Morjan,
  • Claudiu Teodor Fleaca,
  • Monica Scarisoreanu,
  • Alina Ilie,
  • Marius Dumitru,
  • Cristian Mihailescu,
  • Adriana Smarandache and
  • Gabriel Prodan

Beilstein J. Nanotechnol. 2019, 10, 9–21, doi:10.3762/bjnano.10.2

Graphical Abstract
  • estimated 4.18 eV bandgap value [24]. Also, the 1 atom % Nd-doped FTO film obtained by spray pyrolysis at 500 °C presented the lowest sheet resistance and resistivity values, which was accompanied by a 4.15 eV bandgap – a value 4.21 eV lower than that of FTO obtained under similar conditions. Also, in this
  • resistivity at room temperature is on the order of tens to hundreds of Ω·cm. These electrical values are in agreement with those reported in literature considering that the resulting films have a low particle packing density (SnO2 bulk density is 7.0 g/cm3). Zn-doped SnO2 films have resistivity values
  • rutile phase of SnO2. It has been demonstrated that by the increasing the fluorine concentration, the A1g position shift toward lower wavenumbers and the B2g band area grows about 100 times. The optimum resistivity of the co-doped SnO2 films is 57.54 Ω·cm for a ZnEt2 to SnMe4 flow ratio of 0.1. In order
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Published 02 Jan 2019

Site-controlled formation of single Si nanocrystals in a buried SiO2 matrix using ion beam mixing

  • Xiaomo Xu,
  • Thomas Prüfer,
  • Daniel Wolf,
  • Hans-Jürgen Engelmann,
  • Lothar Bischoff,
  • René Hübner,
  • Karl-Heinz Heinig,
  • Wolfhard Möller,
  • Stefan Facsko,
  • Johannes von Borany and
  • Gregor Hlawacek

Beilstein J. Nanotechnol. 2018, 9, 2883–2892, doi:10.3762/bjnano.9.267

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  • are based on p-doped Si wafers with a specific resistivity of 10 Ω cm. The buried SiO2 layer was grown via thermal oxidation at 1123 K in dry O2 atmosphere in a furnace followed by RF-sputtering of an amorphous Si layer. The thickness of the oxide layer was measured by spectroscopic ellipsometry in
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Published 16 Nov 2018

Contactless photomagnetoelectric investigations of 2D semiconductors

  • Marian Nowak,
  • Marcin Jesionek,
  • Barbara Solecka,
  • Piotr Szperlich,
  • Piotr Duka and
  • Anna Starczewska

Beilstein J. Nanotechnol. 2018, 9, 2741–2749, doi:10.3762/bjnano.9.256

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  • the Van der Pauw method. For these measurements of resistivity and the Hall coefficient, the samples were equipped with 150 nm thick Au electrodes deposited using a Q150R ES rotary-pumped sputter coater with a film thickness monitor. For the PME-Corbino investigations of graphene with
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Published 25 Oct 2018

Optimization of Mo/Cr bilayer back contacts for thin-film solar cells

  • Nima Khoshsirat,
  • Fawad Ali,
  • Vincent Tiing Tiong,
  • Mojtaba Amjadipour,
  • Hongxia Wang,
  • Mahnaz Shafiei and
  • Nunzio Motta

Beilstein J. Nanotechnol. 2018, 9, 2700–2707, doi:10.3762/bjnano.9.252

Graphical Abstract
  • different deposition powers and working pressures. Good adhesion to the SLG substrate has been achieved by means of an ultra-thin Cr layer under the Mo layer. By optimizing the deposition conditions we achieved low surface roughness, high optical reflectance and low sheet resistivity while we could decrease
  • elements, Mo is reported to have a relatively better stability at the elevated temperatures required for the fabrication of CIGS and CZTS, better ohmic contact behavior, lower resistivity and a higher work function than the CIGS and CZTS light-absorbing semiconductor layers. However, the most challenging
  • layer [10][11][12][13]. This involves the deposition of a thick Mo layer with low resistivity at low pressure and high sputtering power on a thin Mo layer deposited at high pressure and low power providing the required adhesion to the substrate. However, this method still does not guarantee the adhesion
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Published 18 Oct 2018

High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb)1−x(MnSb)x alloy

  • Leonid N. Oveshnikov,
  • Elena I. Nekhaeva,
  • Alexey V. Kochura,
  • Alexander B. Davydov,
  • Mikhail A. Shakhov,
  • Sergey F. Marenkin,
  • Oleg A. Novodvorskii,
  • Alexander P. Kuzmenko,
  • Alexander L. Vasiliev,
  • Boris A. Aronzon and
  • Erkki Lahderanta

Beilstein J. Nanotechnol. 2018, 9, 2457–2465, doi:10.3762/bjnano.9.230

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  • mobility values have no pronounced dependence on the carrier concentration (see Table 1), i.e., the conductivity of the studied films is affected by various factors. Thus, magnetotransport phenomena can yield additional information about the system. The results of Hall resistivity measurements for the GM3
  • sample are shown in Figure 3a and Figure 3b. The Hall resistivity in magnetic systems can be divided into two parts: where RH is the Hall constant, used for the determination of Np and μ (see Table 1), and Rs is the anomalous Hall constant, which is defined by several parameters of the system [22]. Thus
  • , the Rxy(H) should reproduce the field dependence of the magnetization. As shown in Figure 3a, Rs·M(H) (the Hall resistivity after subtraction of the linear contribution) demonstrates hysteresis behavior (see inset) with Hc ≈ 140 Oe and a saturation field value of Hsat ≈ 3.8 kOe. This is in a good
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Published 14 Sep 2018

Thickness-dependent photoelectrochemical properties of a semitransparent Co3O4 photocathode

  • Malkeshkumar Patel and
  • Joondong Kim

Beilstein J. Nanotechnol. 2018, 9, 2432–2442, doi:10.3762/bjnano.9.228

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  • regarding low-cost and reliable PEC cells [1][2][3][4][5][6][7][8]. For a widespread application of PEC cells, the photoelectrodes need to fulfill the criteria of (i) a low band gap (1.7–2.2 eV), (ii) low resistivity, (iii) low cost, (iv) corrosion stability and (v) a correct alignment of band edges with
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Published 12 Sep 2018

Hydrothermal-derived carbon as a stabilizing matrix for improved cycling performance of silicon-based anodes for lithium-ion full cells

  • Mirco Ruttert,
  • Florian Holtstiege,
  • Jessica Hüsker,
  • Markus Börner,
  • Martin Winter and
  • Tobias Placke

Beilstein J. Nanotechnol. 2018, 9, 2381–2395, doi:10.3762/bjnano.9.223

Graphical Abstract
  • contribute to a decreasing capacity with each cycle, either due to consumption of active Li, trapping of Li in disconnected Si or a growing resistivity [17][21][22][23][24][25]. With the aim to tackle these problems and to obtain Si anodes with a stable cycling performance at high capacity, several promising
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Published 05 Sep 2018

Magnetism and magnetoresistance of single Ni–Cu alloy nanowires

  • Andreea Costas,
  • Camelia Florica,
  • Elena Matei,
  • Maria Eugenia Toimil-Molares,
  • Ionel Stavarache,
  • Andrei Kuncser,
  • Victor Kuncser and
  • Ionut Enculescu

Beilstein J. Nanotechnol. 2018, 9, 2345–2355, doi:10.3762/bjnano.9.219

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  • by McGuire and Potter in 1975 [28]. Accordingly, in a magnetic monodomain system, the resistivity depends on the orientation of the spontaneous magnetization with respect to the current density. If θ is the angle between the magnetization and the current, the resistivity ρ(θ), can be expressed as: It
  • is evident that if the field is perpendicular to the direction of the current (cos2 θ = 0), a perpendicular resistivity is measured, , whereas if the field is parallel to the current direction (cos2 θ = 1), a parallel resistivity is measured, , with . In a magnetic monodomain with uniaxial anisotropy
  • spontaneous magnetization. When the current flows also along the EA, a sharp reversal of the localized magnetic moments from the current direction (θ = 0°) to the opposite direction (θ = 180°) has no influence on the resistivity (cos2 θ = 1) and hence the parallel resistivity, , should remain constant with
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Published 30 Aug 2018

The role of adatoms in chloride-activated colloidal silver nanoparticles for surface-enhanced Raman scattering enhancement

  • Nicolae Leopold,
  • Andrei Stefancu,
  • Krisztian Herman,
  • István Sz. Tódor,
  • Stefania D. Iancu,
  • Vlad Moisoiu and
  • Loredana F. Leopold

Beilstein J. Nanotechnol. 2018, 9, 2236–2247, doi:10.3762/bjnano.9.208

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  • . Ph. Eur., Merck), 9-aminoacridine hydrochloride monohydrate (for synthesis, Merck) and rhodamine 6G (99%, Sigma-Aldrich) were dissolved in ultrapure water (Direct-Q 3 UV, Millipore, resistivity higher than 18 MΩ). Synthesis of silver colloids The synthesis of all silver colloids used in this study is
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Published 22 Aug 2018

Lead-free hybrid perovskites for photovoltaics

  • Oleksandr Stroyuk

Beilstein J. Nanotechnol. 2018, 9, 2209–2235, doi:10.3762/bjnano.9.207

Graphical Abstract
  • preferable to sub-micrometer HP domains. Typically, the MABI-based solar cells demonstrate a high resistivity to air oxidation and ambient humidity [85][155][156][157][160][168]. Similar high stability to the degradation under ambient atmosphere was reported for highly luminescent Cs3Bi2X9 (X = Cl, Br, I
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Published 21 Aug 2018

Filling nanopipettes with apertures smaller than 50 nm: dynamic microdistillation

  • Evelyne Salançon and
  • Bernard Tinland

Beilstein J. Nanotechnol. 2018, 9, 2181–2187, doi:10.3762/bjnano.9.204

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  • . Results and Discussion Quartz capillaries, being of pure silica, have certain intrinsic properties (low dielectric constant, low loss factor, high volume resistivity, strength and chemical purity) that make them appropriate for the reproducible electrical measurements described below. Notably, they
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Published 16 Aug 2018
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