In light of the success of 3D printing using fused-deposition modeling or higher-resolution variants with lasers applicable to polymers and metals, an analogous approach exists on the nanometer scale. With the aid of focused particle beam-induced deposition (FPBID) it is possible to create solid-state structures on the nanoscale. However, in contrast with large-scale 3D printing of plastic or metallic structures, FPBID provides nanomaterials with a wealth of interesting electronic, optical and magnetic properties. Due to this, focused electron beam-induced deposition (FEBID) has experienced a rapid expansion in the breadth of its application fields over the last 10 years. A more recent development that may help to alleviate the resolution-limiting issues in FEBID on solid substrates is the employment of helium ion microscopy. In its current development stage, it is mainly used for imaging applications, providing enhanced contrast for surface features as compared to scanning electron microscopy.
Figure 1: HIM SE images of the hydrogen-flame-annealed polycrystalline Au{111} film taken with a PE of 15 keV...
Figure 2: HIM BSHe images of the hydrogen-flame-annealed polycrystalline Au{111} film. A PE of 20 keV and an ...
Figure 3: Comparison of contrast evolution in a standard HV and the used UHV HIM. The SE yield, which is prop...
Figure 4: SE yield and opaque fraction for a polar angle of 35° with respect to the (111) plane. The azimutha...
Figure 5: Calculated map of channeling directions for an fcc crystal. The lines connecting the nodes at low-i...
Figure 6: Color-coded orientation map of a polycrystalline gold film. The colors indicate the azimuthal angle...
Figure 1: HIM images with a FoV of 20 μm of thin organic layers on Si{001}. Data was recorded with a PE of 15...
Figure 2: HIM images of single-layer 6P islands on Si{001}, recorded with PE of 20 keV and an ion dose of 3.2...
Figure 3: Co-containing nanocrystals on Ge{001} (FoV: 1 μm) (a) High-resolution ET image obtained with a PE o...
Figure 4: Simulation of dechanneling contrast for clean and carbon-covered Si. The graphs show the opaque fra...
Figure 1: (a) SEM image of the silicon lamella (sample 1) after FIB preparation. (b) HAADF TEM image of the s...
Figure 2: HRTEM (a) and diffraction (b) information from gallium finished region. HRTEM (c) and diffraction i...
Figure 3: (a) HAADF image of the TiO2 sample (sample 2) after FIB lift-out. (b) HAADF image of the sample aft...
Figure 4: (a) SEM image of the silicon lamella (sample 3) after FIB lift-out and a 5 keV gallium ion polish. ...
Figure 5: Thickness map of the modified region. The arrow indicates the area along which the integrated inten...
Figure 6: (a) EELS spectra of an unmodified area of silicon (solid black line), the HIM fabricated wedge mark...
Figure 1: HIM SE image of a Au{111} surface, exposed to a He+ beam with a fluence of 8.4 × 1017 cm−2 at diffe...
Figure 2: HIM SE images of the pattern that develops on the Au{111} surface as a function of ion fluence. Num...
Figure 3: (a) Two blisters created by the 35 keV He+ beam on grains with different azimuthal orientation. FOV...
Figure 4: Dependence of the Au{111} average pattern periodicity on helium fluence for 15 keV (red circles), 2...
Figure 5: (a) Surface profiles after different ion fluences delivered by a 35 keV beam. The surface is evenly...
Figure 1: (a–d) A schematic representation of the NBPT SAM cross-linked with He+ ions and the transfer onto a...
Figure 2: Freestanding CNMs with a dimension of 50 × 50 µm2 supported by a TEM grid with a holey carbon film:...
Figure 3: A series of HIM images showing the cross-linking of a NBPT SAM induced by helium ion irradiation, w...
Figure 4: Percentage of the cross-linked area plotted as a function of the irradiation dose: (1) no CNM forms...
Figure 1: (a) Classification of proximal shapes (right hand side). The grey box indicates the intended deposi...
Figure 2: (a) Radius of the outer halo (AFM-based) of 30 keV PtC deposits as a function of the central pad th...
Figure 3: Representative AFM height image (a) of a 9 nm thick PtC deposit on Si–SiO2 fabricated at 25 keV tog...
Figure 4: AFM height images with overlaid current information of PtC pads deposited on an conductive Au elect...
Figure 5: (a) Functional classification of proximity deposition based on KFM measurements. (b) and (c) show t...
Figure 6: Edge-broadening effect for 30 keV deposits of different thickness. (a) shows a normalized height re...
Figure 7: Broadening effects for 5 keV deposits of different thickness. (b) shows the normalized height repre...
Figure 8: Outer-halo behavior for increasing pad thicknesses of 5 keV deposits (squares) together with an FSE...
Figure 9: (a) AFM height cross section of a 20 keV deposit. (b) cumulative BSE emission (blue, left axis) and...
Figure 1: In situ EDS spectra of deposits purified using an electron beam with an energy of 5 keV, a current ...
Figure 2: a) Cross-section SEM images of 400 nm thick PtCx deposits that were purified for 1, 2, 4, 6, 8, and...
Figure 3: Normalized carbon peak area plotted as a function of a) curing time for the indicated pixel resolut...
Figure 4: a) Normalized carbon peak area plotted as a function of dose for the beam energies shown. b) Monte ...
Figure 5: a) Images of wire deposits with different initial thicknesses (wires 1–4) purified at 1 min interva...
Figure 6: a) EDS measurements of the samples deposited and purified on the TEM membranes. TEM images of an b)...
Figure 7: Selected area electron diffraction (SAED) patterns for O2 E-beam uncured (left) and cured (right) d...
Figure 8: Bar graph comparing the simulated and experimental purification rates for varying beam parameters.
Figure 1: Schematic illustration of the proposed technique. (i) A two-dimensional array of gold nanoparticles...
Figure 2: SEM image of the substrate after step (i) using the amine-epoxy method.
Figure 3: SEM image of the sample demonstrating that a row of nanoparticles was formed after step (iii), wher...
Figure 4: SEM image of the sample irradiated over a relatively large, L-shaped area.
Figure 5: Raman shift measured for the sample, providing evidence of the existence of amorphous carbon.
Figure 6: TEM image of the amorphous deposit formed around/between the particle and the substrate (a), and sc...
Figure 7: SEM image of the sample after step (i) using the amino-undecanethiol method.
Figure 8: SEM image of the specimen using the amino-undecanethiol method after step (iii), illustrating that ...
Figure 9: Schematic illustration of the formation of a two-dimensional, dense array of gold nanoparticles on ...
Figure 1: Preparation and post-processing of the samples investigated in this work. Throughout the text the s...
Figure 2: SEM images of the samples. The 500 × 860 nm2 insets show the morphology of the post-processed Co/Pt...
Figure 3: Time-dependent conductance of the Pt layer of sample C normalized to its saturation value after the...
Figure 4: Hall voltage cycling at 10 K for all samples. Before measurements, all samples were saturated at 3 ...
Figure 5: TEM micrographs of sample C acquired (a) in the high angle annular dark field mode and (b) in the a...
Figure 6: (a) Cross-sectional and (b) lower layer in-plane EDX elemental peak intensities for sample C acquir...
Figure 7: The location of the probed layers is shown in panel (a). Nano-diffractograms of the upper (b) and t...
Figure 8: Isothermal Hall voltage cycling for sample D at a series of temperatures, as indicated. Insets: Tem...
Figure 1: Schematic of the detection of reflected ions in the helium ion microscope. 1 – sample, 2 – Pt-coate...
Figure 2: Images of Au on carbon by detection of reflected He ions (a) and backscattered ions (b).
Figure 3: Images of Au on carbon obtained by detection of secondary electrons (a) and reflected He ions (b).
Figure 4: Images of silicon dioxide bars on silicon (TGQ-1 sample) obtained by detection of (a) secondary ele...
Figure 5: (a) Signal profiles: secondary electrons (dashed line) and reflected ions (solid line), red arrows ...
Figure 6: RIM image of cleaved mica. White arrows shows mark the smallest step in this image. Accelerating vo...
Figure 7: A schematic diagram of the incident and reflected ion paths with designations given in the text.
Figure 8: Dependence of the reflection coefficient of 35 keV He+ on the grazing angle calculated with SRIM so...
Figure 9: Designation of the regions of the upward step (a), and their projection onto the image plane (b): 1...
Figure 10: Ion transmission through the edge of a downward step (a) and its projection to the image plane (b).
Figure 11: Dependence of the coefficients on the distance from the edge of the step: reflection coefficient fr...
Figure 12: Profile of the relative contrast of a downward step: dots – experimental data, solid line – data ca...
Figure 13: Reflection of ions from the charged surface. Trajectories of ions reflected from a charged surface ...
Figure 1: Example incoming trajectories (dotted lines) in the surface-scattering zone (typically 15 Å above a...
Figure 2: Comparison of reflection-electron-energy-loss spectra (REELS) of Si (left) and Cu (right) under bom...
Figure 3: Simulation geometry: 1 keV electrons impinge normally onto the material (Si or Cu); all backscatter...
Figure 4: (Upper panel) Reflection-electron-energy-loss spectrum (REELS) of Si under 100 eV bombardment (see [55]...
Figure 5: Same as Figure 4 with the inclusion of surface excitations in the modelling of electron transport through t...
Figure 1: (a) SEM image (at 52° tilt angle) of suspended nanowire (SNW) 1 deposited between pillars; (b) elec...
Figure 2: (a) Current(I)–voltage(V) measurements on SNW 1. In the inset, the first I–V measurement taken on t...
Figure 3: Bright-field TEM image of SNW 1 after electrical measurements. In the inset, the SAED pattern taken...
Figure 4: (a) SEM image (at 20° tilt angle) of SNW 2 deposited between the Au pads across the slit. (b) Five ...
Figure 5: Bright-field TEM image of SNW 2 as shown in Figure 4c. In the top inset, the SAED pattern taken on the blue-...
Figure 6: (a) SEM image (at 52° tilt angle) of SNW 3 deposited between Au pads; (b) Three subsequent I–V meas...
Figure 1: (a) A sketch of the FEBID process. (b) A SEM image of the nanowire with targeted width of 250 nm an...
Figure 2: MOKE results. (a) Average magnetic hysteresis loop of the sample with width/nominal thickness of 25...
Figure 3: Low-magnification TEM images of the iron nanowires with width of 250 nm and nominal thickness of (a...
Figure 4: Compositional analysis through EELS of the iron nanowires with nominal thickness of (a) 10 nm and (...
Figure 5: Sketch of the two-dimensional (y,z plane) geometrical shapes used in the micromagnetic simulation f...
Figure 6: Coercive field (HC) obtained from the simulations of iron nanowires with nominal width of 250 nm an...
Figure 7: Simulated magnetization reversal with five snapshots of the magnetization state in the nanowire wit...
Figure 8: Magnetization vector-color maps extracted from the simulations for 250 nm wide Fe nanowires with re...
Figure 9: Magnetization vector-color maps extracted from the simulations for 250 nm wide Fe nanowires with be...
Figure 10: Magnetization vector-color maps extracted from the simulations for 250 nm wide Fe nanowires with be...
Figure 11: Coercive field (HC) obtained from the simulations of nanowires as a function of tMax for the three ...
Figure 1: Sketch of post-growth annealing experiments: a) conventional heating using a hot plate in an SEM, b...
Figure 2: TEM of as-deposited lines and squares from Cu(hfac)2 on an amorphous carbon membrane on a TEM grid....
Figure 3: Post-growth annealing of FEBID line from Cu(hfac)2 between four gold electrodes. SEM tilt images (6...
Figure 4: Post-growth laser annealing of FEBID deposits from Cu(hfac)2. SEM top view images of a) as-deposite...
Figure 5: Periodic 3D FEBID line deposits from (hfac)Cu(DMB) between gold electrodes on SiO2/Si. SEM tilt ima...
Figure 6: In situ TEM annealing for 10 min at 220 °C on a line deposit from Cu(hfac)2 shown in Figure 2. a) STEM high...
Figure 7: TEM in situ annealing of FEBID rods grown from (hfac)Cu(VTMS). a) Dark field image of an as-deposit...
Figure 8: Calculated resistivity from the resistance measurement of a Cu–C line during in situ post-growth he...
Figure 1: Steady state vertical growth rate of a deposit plotted as a function of electron flux. The linear r...
Figure 2: Potential energy diagram for adsorption governed by a single potential well at the surface. Modifie...
Figure 3: Adsorbate concentration (Na) versus time in the absence of electron irradiation (here, Na = 0 at t ...
Figure 4: Gaussian electron flux profile (Ω = 10 nm) and two tophat flux profiles with a radius of 250 nm (β ...
Figure 5: Molecule flow regimes for two flow rates Q of H2 and H2O. Note that 1 sccm = 4.48 × 1017 molecules/...
Figure 6: Illustration of the two capillary nozzle geometries implemented in the GIS simulator. Left: straigh...
Figure 7: Precursor flux distributions at the substrate under molecular flow conditions for conical nozzles w...
Figure 8: Steady state growth rate versus r calculated at a number of substrate temperatures using Equation 15 and a Gau...
Figure 9: First FEBIP resolution scaling law for Gaussian and tophat electron beams.
Figure 10: Illustration of two adsorbate FEBIP where the molecules are supplied by two capillaries and impinge...
Figure 11: (a) Adsorbate concentrations Ne and Nd versus time, calculated in the absence of electron irradiati...
Figure 12: Potential energy diagram for the case of chemisorption governed by a potential well of depth Ec and...
Figure 13:
(a) Steady state concentrations of physisorbed and chemisorbed
adsorbates versus pressure, calcul...
Figure 14: Steady-state vertical growth rate versus substrate temperature for a precursor that undergoes activ...
Figure 15: Flowchart showing how F radicals (represented by α) generated by electron induced dissociation of NF...
Figure 16: (a) Etch rate of Si calculated using Equation 61 as a function of electron flux f. (b,c) Corresponding steady ...
Figure 17: Calculated changes in dissociation yields YA and YB (per primary electron as defined in Equation 66 and Equation 67) and ...
Figure 18: Deposit geometries analogous to those shown in Figure 11b, simulated using Equation 70 and Equation 71, a Gaussian electron-beam pr...
Figure 19: FEBID growth rates simulated using Equation 75 and Equation 76, a Gaussian electron-beam profile (Ω = 5 nm) and substrate...
Figure 20: Examples of deposit geometries simulated using exposure times (t) of 5 ms; 10 ms; 50 ms; 100 ms, a ...
Figure 21: Examples of deposit geometries simulated using exposure times (t) of 5 ms; 10 ms; 50 ms; 100 ms, a ...
Figure 1: (a, b) HIM images of freestanding CNMs on TEM grids, illustrating the importance of the background....
Figure 2: Examples of CNMs which were transferred onto copper grids with hexagonal openings. Different types ...
Figure 3: Examples of large freestanding CNMs. (a, b) Three intact CNMs are imaged at different magnification...
Figure 4: CNMs transferred on (a,b) bare copper TEM grids and (c,d) on grids with carbon films with regular o...
Figure 5: CNM on a gold grid. The same spot was imaged with different beam currents but under otherwise ident...
Figure 6: The same CNM is imaged (a) without and (b) with charge compensation. Detailed information on all HI...
Figure 1: Schematic representation of the FEBID process (reproduced with permission from [2], Copyright (2008) A...
Figure 2: Schematic representation of elastic and inelastic scattering of high-energy primary electrons impin...
Figure 3: Experimentally measured SE spectra from Ni(111) [6] irradiated by PEs with 400 eV impact energy (black...
Figure 4: Simplified two-dimensional potential energy diagram for quasi-diatomic dissociation through electro...
Figure 5: Simplified two-dimensional potential energy diagram for a quasi-diatomic dissociation through elect...
Figure 6: Simplified two-dimensional potential energy diagram for a quasi-diatomic dissociation through elect...
Figure 7: Energy-dependent relative cross sections (ion yields) of negative ion fragments produced by DEA to ...
Figure 8: Positive ion mass spectrum of MeCpPtMe3 recorded with electron energy of 100 eV (reproduced with pe...
Figure 9: Positive ion mass spectra of MeCpPtMe3 in the m/z range of 0–85 (reproduced with permission from Wn...
Figure 10: Changes in the C/Pt ratio of a 3.16 nm thick film of MeCpPtMe3 adsorbed on a gold surface at 180 K ...
Figure 11: a) A line of best fit to the cross section for methane desorption from MeCpPtMe3 adsorbed on a gold...
Figure 12: Energy-dependent absolute cross sections for negative ion fragments produced by DEA to Pt(PF3)4 (re...
Figure 13: Electron ionization FT-ICR mass spectrum of Pt(PF3)4 recorded at 20 eV incident electron energy (re...
Figure 14: (a) Electron energy loss spectra of Pt(PF3)4 recorded at 0° angle with varying residual energies. T...
Figure 15: Time-resolved mass spectra of gas phase PF3 (positive [PF2]+ ions produced by 70 eV electron impact...
Figure 16: Electron dose dependence of the fractional coverage of Phosphorous (P/PD=0), Fluorine (F/FD=0) and ...
Figure 17: Energy-dependent absolute DEA cross sections for Co(CO)3NO (reproduced with permission from [10], Copyr...
Figure 18: Energy dependence of the partial cross sections for positive ion fragments formed from Co(CO)3NO (r...
Figure 19: The partial cross sections for single CO loss through DEA (red solid line), for single CO loss thro...
Figure 20: Predicted relative effective damage yield for single CO loss through DEA (red solid line), for sing...
Figure 21: Positive ion (DI) mass spectra of (a) gas phase Co(CO)3NO, (b) volatile species desorbing from a 2....
Figure 22: Electron dose dependence of the fractional coverage of carbon, oxygen and nitrogen from Co(CO)3NO a...
Figure 1: Figure 8 in the original article: Calculated resistivity from the resistance measurement of a Cu–C ...