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Search for "sputtering" in Full Text gives 386 result(s) in Beilstein Journal of Nanotechnology. Showing first 200.

Bolometric IR photoresponse based on a 3D micro-nano integrated CNT architecture

  • Yasameen Al-Mafrachi,
  • Sandeep Yadav,
  • Sascha Preu,
  • Jörg J. Schneider and
  • Oktay Yilmazoglu

Beilstein J. Nanotechnol. 2024, 15, 1030–1040, doi:10.3762/bjnano.15.84

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  •  1c was defined by overlapping two tantalum-based growth stop strips (150 nm, sputtering) with a rectangular Fe layer (2 nm, e-beam) on the Si wafer. Only regions with direct Fe/AlOx contact were active for CNT growth. This combination allows for the definition of any shape, offering versatility for
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Published 15 Aug 2024

Synthesis of silver–palladium Janus nanoparticles using co-sputtering of independent sources: experimental and theorical study

  • Maria J. Martínez-Carreón,
  • Francisco Solís-Pomar,
  • Abel Fundora,
  • Claudio D. Gutiérrez-Lazos,
  • Sergio Mejía-Rosales,
  • Hector N. Fernández-Escamilla,
  • Jonathan Guerrero-Sánchez,
  • Manuel F. Meléndrez and
  • Eduardo Pérez-Tijerina

Beilstein J. Nanotechnol. 2024, 15, 808–816, doi:10.3762/bjnano.15.67

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  • sputtering Ag nanoparticles, only the second magnetron section working to confirm the sputtering of Pd nanoparticles, and both magnetrons working to obtain BNPs of the desired size. Figure 1 shows the nanoparticle size distribution for each experimental condition. The green color profile corresponds to the
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Published 04 Jul 2024

Effect of repeating hydrothermal growth processes and rapid thermal annealing on CuO thin film properties

  • Monika Ozga,
  • Eunika Zielony,
  • Aleksandra Wierzbicka,
  • Anna Wolska,
  • Marcin Klepka,
  • Marek Godlewski,
  • Bogdan J. Kowalski and
  • Bartłomiej S. Witkowski

Beilstein J. Nanotechnol. 2024, 15, 743–754, doi:10.3762/bjnano.15.62

Graphical Abstract
  • literature. These encompass methods such as molecular beam epitaxy [17][18][19], direct current magnetron sputtering [4][20][21], and pulsed laser deposition [22][23][24]. Alternative approaches involve techniques such as chemical vapor deposition [25][26][27] and atomic layer deposition [28][29][30]. CuO
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Published 24 Jun 2024

Level set simulation of focused ion beam sputtering of a multilayer substrate

  • Alexander V. Rumyantsev,
  • Nikolai I. Borgardt,
  • Roman L. Volkov and
  • Yuri A. Chaplygin

Beilstein J. Nanotechnol. 2024, 15, 733–742, doi:10.3762/bjnano.15.61

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  • understanding of the sputtering process, the distribution of oxygen atoms in the redeposited layer derived from the numerical data was compared with the corresponding elemental map acquired by energy-dispersive X-ray microanalysis. Keywords: electron microscopy; focused ion beam; level set simulation
  • ; multilayer substrate; silicon; silicon dioxide; sputtering; Introduction The focused ion beam (FIB) technique is an effective method for surface nanostructuring. It is based on the local removal of material by sputtering with a narrow beam of, typically, gallium ions. This feature of the FIB method makes it
  • , the desired properties are achieved by FIB processing of such substrates with different irradiation doses. A low-dose treatment is sufficient for cases that do not require sputtering of large amounts of material. Among such cases are the precise tuning of the magnetic characteristics of thin
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Published 24 Jun 2024

Directed growth of quinacridone chains on the vicinal Ag(35 1 1) surface

  • Niklas Humberg,
  • Lukas Grönwoldt and
  • Moritz Sokolowski

Beilstein J. Nanotechnol. 2024, 15, 556–568, doi:10.3762/bjnano.15.48

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  • from Pfeiffer Vacuum. The vicinal Ag(35 1 1) crystal was obtained from MaTecK and cleaned by repeated cycles of sputtering and subsequent annealing at 700 K for 45 min. We tested whether a variation of the annealing temperatures between 500 and 800 K has an influence on the step distribution of the
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Published 21 May 2024

Superconducting spin valve effect in Co/Pb/Co heterostructures with insulating interlayers

  • Andrey A. Kamashev,
  • Nadir N. Garif’yanov,
  • Aidar A. Validov,
  • Vladislav Kataev,
  • Alexander S. Osin,
  • Yakov V. Fominov and
  • Ilgiz A. Garifullin

Beilstein J. Nanotechnol. 2024, 15, 457–464, doi:10.3762/bjnano.15.41

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  • the magnetization of the Co1 layer. The layers were deposited using electron beam evaporation (Co, Pb) and AC sputtering (Si3N4). The deposition setup had a load-lock station with vacuum shutters, allowing one to transfer the sample holder without breaking the ultrahigh vacuum in the deposition
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Published 25 Apr 2024

Investigating ripple pattern formation and damage profiles in Si and Ge induced by 100 keV Ar+ ion beam: a comparative study

  • Indra Sulania,
  • Harpreet Sondhi,
  • Tanuj Kumar,
  • Sunil Ojha,
  • G R Umapathy,
  • Ambuj Mishra,
  • Ambuj Tripathi,
  • Richa Krishna,
  • Devesh Kumar Avasthi and
  • Yogendra Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 367–375, doi:10.3762/bjnano.15.33

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  • structures. Although these structures may not be visible to the naked eye, they certainly have a visible impact on the mentioned applications. Nanopatterning is a very delicate procedure that is only possible with special techniques such as ion beam sputtering (IBS), with which one can achieve nanostructures
  • understood. Despite controlled fabrication of patterns has been achieved, details that influence the process of self-assembly still remain open. Ion beam sputtering is an important method for inducing topographical changes in specific materials. For silicon, self-organized dots, ripples, and cones have been
  • to knock them out of the surfaces through an outwardly directed momentum. This process is known as sputtering [26], and the number of ejected atoms per ion is given by the sputtering yield, Y(θ). It is clearly visible that Y is a function of the incident angle θ, and it maximizes around θ ≈ 60°. Ion
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Published 05 Apr 2024

Controllable physicochemical properties of WOx thin films grown under glancing angle

  • Rupam Mandal,
  • Aparajita Mandal,
  • Alapan Dutta,
  • Rengasamy Sivakumar,
  • Sanjeev Kumar Srivastava and
  • Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

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  • sputtering for optoelectronic applications. A glancing angle of 87° is employed to grow films of different thicknesses, which are then exposed to post-growth annealing. Detailed local probe analyses in terms of morphology and work function of WOx films are carried out to investigate thickness-dependent
  • structural, optical, and electrical properties of glancing angle-deposited NS-WOx thin films, where NS-WOx films of different thicknesses (6–60 nm) are prepared by rf sputtering and exposed to post-growth annealing at 673 K in vacuum (2 × 10−7 mbar). The role of increased oxygen vacancy concentration (OV) on
  • thin films were deposited on ultrasonically cleaned p-Si (100) and soda lime glass substrates of 1 × 1 cm2 dimension using a rf magnetron sputtering setup (Excel Instruments). Trichloroethylene, propanol, acetone, and DI water were used to carry out ultrasonication of the substrates for removing
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Published 02 Apr 2024

Ultrasensitive and ultrastretchable metal crack strain sensor based on helical polydimethylsiloxane

  • Shangbi Chen,
  • Dewen Liu,
  • Weiwei Chen,
  • Huajiang Chen,
  • Jiawei Li and
  • Jinfang Wang

Beilstein J. Nanotechnol. 2024, 15, 270–278, doi:10.3762/bjnano.15.25

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  • ion beam sputtering was obtained from Fuzhou Yingfei Xun Photoelectric Tech Co., Ltd, China; it possessed a density of 19.3 g·cm−3 and a conductivity of 4.52 × 107 S·m−1. Silver conductive adhesive, which was procured from Shenzhen Ausbond Co., LTD. (Guangdong, China), was employed to affix copper
  • structured PDMS was initially cleansed through a 5 min Ar plasma sputtering and, subsequently, coated with a 10 nm thick Ti adhesion layer. After that, ion beam sputtering was utilized to deposit a 50 nm thick Au thin film onto the outer surface of the helically shaped PDMS. Then, a controlled pre-stretch
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Published 01 Mar 2024

Design, fabrication, and characterization of kinetic-inductive force sensors for scanning probe applications

  • August K. Roos,
  • Ermes Scarano,
  • Elisabet K. Arvidsson,
  • Erik Holmgren and
  • David B. Haviland

Beilstein J. Nanotechnol. 2024, 15, 242–255, doi:10.3762/bjnano.15.23

Graphical Abstract
  • with 600 nm low-stress (<100 MPa) Si-N films. The sensor chips are 1.6 mm by 3.4 mm, about the size of a standard AFM cantilever chip. The steps are as follows: (a) Superconducting film. We first deposit a 15 nm thick thin film of superconducting Nb60Ti40N by reactive co-sputtering from separate
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Published 15 Feb 2024

Ion beam processing of DNA origami nanostructures

  • Leo Sala,
  • Agnes Zerolová,
  • Violaine Vizcaino,
  • Alain Mery,
  • Alicja Domaracka,
  • Hermann Rothard,
  • Philippe Boduch,
  • Dominik Pinkas and
  • Jaroslav Kocišek

Beilstein J. Nanotechnol. 2024, 15, 207–214, doi:10.3762/bjnano.15.20

Graphical Abstract
  • by ion beams, modeling ion implantation, lithography, and sputtering conditions. Structural changes in 2D DNA origami nanostructures deposited on Si are analyzed using AFM imaging. The observed effects on DNA origami include structure height decrease or increase upon fast heavy ion irradiation in
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Published 12 Feb 2024

Measurements of dichroic bow-tie antenna arrays with integrated cold-electron bolometers using YBCO oscillators

  • Leonid S. Revin,
  • Dmitry A. Pimanov,
  • Alexander V. Chiginev,
  • Anton V. Blagodatkin,
  • Viktor O. Zbrozhek,
  • Andrey V. Samartsev,
  • Anastasia N. Orlova,
  • Dmitry V. Masterov,
  • Alexey E. Parafin,
  • Victoria Yu. Safonova,
  • Anna V. Gordeeva,
  • Andrey L. Pankratov,
  • Leonid S. Kuzmin,
  • Anatolie S. Sidorenko,
  • Silvia Masi and
  • Paolo de Bernardis

Beilstein J. Nanotechnol. 2024, 15, 26–36, doi:10.3762/bjnano.15.3

Graphical Abstract
  • of 1.2 nm of Fe and 30 nm of Al on top; then, 60 nm of aluminum are deposited at an angle of 45°. Thus, we form a superconductor–normal metal (SN) Andreev contact. Subsequently, oxidation is carried out at a relatively high pressure (1–2 Torr) in the working chamber of the sputtering unit. The last
  • based on high-temperature YBCO Josephson junctions [27][28][29]. Long junctions based on YBCO thin films were fabricated by the preliminary topology mask method [30][31]. Specifically, YBCO film was deposited on a 24° [001]-tilt Zr1−xYxO2 bicrystal substrate by magnetron sputtering with preliminary
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Published 04 Jan 2024

TEM sample preparation of lithographically patterned permalloy nanostructures on silicon nitride membranes

  • Joshua Williams,
  • Michael I. Faley,
  • Joseph Vimal Vas,
  • Peng-Han Lu and
  • Rafal E. Dunin-Borkowski

Beilstein J. Nanotechnol. 2024, 15, 1–12, doi:10.3762/bjnano.15.1

Graphical Abstract
  • magnetron sputtering through the resist aperture. We used DC magnetron sputtering in a pure Ar environment at a pressure of 1 Pa to deposit Py at room temperature. The effective permalloy target had a diameter of 8 mm. The sputtered material almost forms a parallel beam when it approaches the substrate at a
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Published 02 Jan 2024

A combined gas-phase dissociative ionization, dissociative electron attachment and deposition study on the potential FEBID precursor [Au(CH3)2Cl]2

  • Elif Bilgilisoy,
  • Ali Kamali,
  • Thomas Xaver Gentner,
  • Gerd Ballmann,
  • Sjoerd Harder,
  • Hans-Peter Steinrück,
  • Hubertus Marbach and
  • Oddur Ingólfsson

Beilstein J. Nanotechnol. 2023, 14, 1178–1199, doi:10.3762/bjnano.14.98

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Published 06 Dec 2023

A visible-light photodetector based on heterojunctions between CuO nanoparticles and ZnO nanorods

  • Doan Nhat Giang,
  • Nhat Minh Nguyen,
  • Duc Anh Ngo,
  • Thanh Trang Tran,
  • Le Thai Duy,
  • Cong Khanh Tran,
  • Thi Thanh Van Tran,
  • Phan Phuong Ha La and
  • Vinh Quang Dang

Beilstein J. Nanotechnol. 2023, 14, 1018–1027, doi:10.3762/bjnano.14.84

Graphical Abstract
  • bonding between nanoparticles and nanorods. To fabricate the photodetector, CuO NPs/ZnO NRs were deposited on a glass substrate initially. Then, silver electrodes with a thickness of 100 nm were directly patterned on the glass substrate by a sputtering process using a shadow mask with 0.3 cm channel
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Published 13 Oct 2023

Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

  • Mathias Franz,
  • Mahnaz Safian Jouzdani,
  • Lysann Kaßner,
  • Marcus Daniel,
  • Frank Stahr and
  • Stefan E. Schulz

Beilstein J. Nanotechnol. 2023, 14, 951–963, doi:10.3762/bjnano.14.78

Graphical Abstract
  • from VG Scienta using a fixed pass energy of 200 eV. The sample was pre-cleaned by argon sputtering for 2 min with 4.0 keV acceleration energy to remove surface adsorbents and contaminations. The data were analysed using MATPLOTLIB [27][28] and LMFIT [29]. The XPS spectra were corrected using the
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Published 15 Sep 2023

Ultralow-energy amorphization of contaminated silicon samples investigated by molecular dynamics

  • Grégoire R. N. Defoort-Levkov,
  • Alan Bahm and
  • Patrick Philipp

Beilstein J. Nanotechnol. 2023, 14, 834–849, doi:10.3762/bjnano.14.68

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  • contaminant, water, sputtered by ultralow-energy ion beams, ranging from 50 to 500 eV and covering the full range of incidence angles, using molecular dynamics simulations with the ReaxFF potential. We show that the expected sputtering yield trends are maintained down to the lowest sputtering yields. A region
  • planned to reach down to 50 eV, which would be correspondingly surface sensitive, in the near future. In the two above cases, contaminations in the experimental chamber play an important role during the sputtering processes. Typical contaminations are (in the order of frequency) water, nitrogen, carbon
  • will be based on methodologies developed in a previous paper [26], which focused on a silicon sample contaminated with a water layer, and in which we showed the influence of the contamination layer on the sputtering process. In the presence of water on the sample surface, we showed that while the
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Published 01 Aug 2023

In situ magnesiothermic reduction synthesis of a Ge@C composite for high-performance lithium-ion batterie anodes

  • Ha Tran Huu,
  • Ngoc Phi Nguyen,
  • Vuong Hoang Ngo,
  • Huy Hoang Luc,
  • Minh Kha Le,
  • Minh Thu Nguyen,
  • My Loan Phung Le,
  • Hye Rim Kim,
  • In Young Kim,
  • Sung Jin Kim,
  • Van Man Tran and
  • Vien Vo

Beilstein J. Nanotechnol. 2023, 14, 751–761, doi:10.3762/bjnano.14.62

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  • preparation routes, such as sputtering deposition [20], wet-chemical reduction [21][22], thermal reduction [23], colloidal synthesis [24], and molten-salt synthesis [25], metallothermic, especially magnesiothermic reduction, has been widely applied in the synthesis of group-IV elements to control the
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Published 26 Jun 2023

SERS performance of GaN/Ag substrates fabricated by Ag coating of GaN platforms

  • Magdalena A. Zając,
  • Bogusław Budner,
  • Malwina Liszewska,
  • Bartosz Bartosewicz,
  • Łukasz Gutowski,
  • Jan L. Weyher and
  • Bartłomiej J. Jankiewicz

Beilstein J. Nanotechnol. 2023, 14, 552–564, doi:10.3762/bjnano.14.46

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  • substrates using pulsed laser deposition (PLD) and magnetron sputtering (MS) and their evaluation as potential substrates for surface-enhanced Raman spectroscopy (SERS) are reported. Ag layers of comparable thicknesses were deposited using PLD and MS on nanostructured GaN platforms. All fabricated SERS
  • : GaN/Ag; magnetron sputtering; nanofabrication; pulsed laser deposition; SERS substrates; surface-enhanced Raman spectroscopy (SERS); Introduction Surface-enhanced Raman spectroscopy (SERS) is a highly sensitive and specific technique with multiplexing capabilities [1][2][3][4]. It is considered for
  • [31], gene mutation identification [34][35], and investigations of the reactivity of organic monoradicals [36]. In our previous studies, nanostructured GaN platforms were coated with pure metals or alloys using magnetron sputtering (MS) in an argon atmosphere [28][29][30][31][32]. Until now, no other
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Published 03 May 2023

Plasmonic nanotechnology for photothermal applications – an evaluation

  • A. R. Indhu,
  • L. Keerthana and
  • Gnanaprakash Dharmalingam

Beilstein J. Nanotechnol. 2023, 14, 380–419, doi:10.3762/bjnano.14.33

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Published 27 Mar 2023

A novel approach to pulsed laser deposition of platinum catalyst on carbon particles for use in polymer electrolyte membrane fuel cells

  • Bogusław Budner,
  • Wojciech Tokarz,
  • Sławomir Dyjak,
  • Andrzej Czerwiński,
  • Bartosz Bartosewicz and
  • Bartłomiej Jankiewicz

Beilstein J. Nanotechnol. 2023, 14, 190–204, doi:10.3762/bjnano.14.19

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  • [27]. Direct deposition of PtNPs can be attained by the use of various physical vapor deposition techniques such as magnetron sputtering [28], sputtering [29], e-beam evaporation [30], dual ion-beam assisted deposition [31], and pulsed laser deposition (PLD) [27][32][33]. Previously, PLD has been used
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Published 02 Feb 2023

Antimicrobial and mechanical properties of functionalized textile by nanoarchitectured photoinduced Ag@polymer coating

  • Jessica Plé,
  • Marine Dabert,
  • Helene Lecoq,
  • Sophie Hellé,
  • Lydie Ploux and
  • Lavinia Balan

Beilstein J. Nanotechnol. 2023, 14, 95–109, doi:10.3762/bjnano.14.11

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  • investigated [26], with specific emphasis on AgNPs [27]. Textiles have been successfully functionalized with AgNPs using a variety of both physical and chemical deposition techniques [28]. To name a few, Mei et al. [29] used magnetic sputtering to deposit AgNPs onto polyimide textiles; OhadiFar et al. [30
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Published 12 Jan 2023

Combining physical vapor deposition structuration with dealloying for the creation of a highly efficient SERS platform

  • Adrien Chauvin,
  • Walter Puglisi,
  • Damien Thiry,
  • Cristina Satriano,
  • Rony Snyders and
  • Carla Bittencourt

Beilstein J. Nanotechnol. 2023, 14, 83–94, doi:10.3762/bjnano.14.10

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  • complexity and the high cost of gold restrict its use in devices. Here, we report on a novel two-step approach that combines the deposition of a silver–aluminum thin film with dealloying to design and fabricate efficient SERS platforms. The magnetron sputtering technique was used for the deposition of the
  • rhodamine B. Keywords: dealloying; magnetron sputtering; nanoporous thin film; nanostructuring; SERS; Introduction Pollutant residues are strictly regulated in most countries to ensure water and food safety. In this context, there is an increasing demand for pollutant analysis tools with practical and
  • resulting signal intensity tends to strongly vary due to surface contamination [30]. In this paper, a simple synthesis method to design bimodal porous silver substrate for SERS is reported. Magnetron co-sputtering of a silver and aluminum target was used for the deposition of the precursor alloy thin film
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Published 11 Jan 2023

The influence of structure and local structural defects on the magnetic properties of cobalt nanofilms

  • Alexander Vakhrushev,
  • Aleksey Fedotov,
  • Olesya Severyukhina and
  • Anatolie Sidorenko

Beilstein J. Nanotechnol. 2023, 14, 23–33, doi:10.3762/bjnano.14.3

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  • that are influenced and corrected in the manufacturing process). The previously conducted studies considered the influence of sample parameters (e.g., temperature of the substrate on which the magnetron sputtering of nanofilms takes place, the intensity and deposition direction) on the final properties
  • dimensions as the ideal HCP structure in the first numerical experiment. A group of cobalt atoms with structural defects acquired as a result of film sputtering in an enlarged form is shown in Figure 3b. Henceforward, to simplify the formulation, the nanosystem of cobalt atoms from the numerical experiment
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Published 04 Jan 2023

Observation of collective excitation of surface plasmon resonances in large Josephson junction arrays

  • Roger Cattaneo,
  • Mikhail A. Galin and
  • Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2022, 13, 1578–1588, doi:10.3762/bjnano.13.132

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  • interjunction interaction. Samples We study arrays of Nb/NbxSi1−x/Nb JJs fabricated on oxidized Si substrates and connected in series by Nb electrodes. The NbxSi1−x interlayer with the composition x ≃ 0.14 was deposited by co-sputtering from Nb and Si sources. Details about the fabrication procedure can be
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Published 28 Dec 2022
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