Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy

• Rosine Coq Germanicus,
• Peter De Wolf,
• Florent Lallemand,
• Catherine Bunel,
• Serge Bardy,
• Hugues Murray and
• Ulrike Lüders

Beilstein J. Nanotechnol. 2020, 11, 1764–1775, doi:10.3762/bjnano.11.159

• the values of the ∂C/∂V amplitude are the strongest. The two signals localize the electrical junctions of the diode. The first signal is the signature of the pn junction, between the p+ implanted layer (anode) and the lightly doped n-type epitaxial silicon layer, and the second signal is the quasi

• -intrinsic/BN junction. Moreover, the amplitude of the local capacitance variation for the lightly doped n-type epitaxial silicon layer is close to zero (almost no signal). In the phase measurement, this layer has a value that is similar to the one obtained for the oxide, which explains the relatively poor

• applied voltage can be extracted. The availability of a C–V (sMIM-C as a function of V) spectrum in every pixel allows for the extraction of a high-resolution map of the flatband voltage and pn junction depletion zones. This illustrates the capability to reveal sample properties that are either not

High-responsivity hybrid α-Ag₂S/Si photodetector prepared by pulsed laser ablation in liquid

• Raid A. Ismail,
• Hanan A. Rawdhan and
• Duha S. Ahmed

Beilstein J. Nanotechnol. 2020, 11, 1596–1607, doi:10.3762/bjnano.11.142

• Tu slightly increased with bias voltage, whereas the reverse current of the heterojunction prepared with CTAB did not depend on the bias voltage. These results indicated an enhancement of the junction properties. The ideality factor (n) of Ag2S/Si was estimated from the semi-logarithmic plot of the

• remarkable improvement in junction characteristics. The value of turn-on voltage of the heterojunctions was estimated and found to be 2.2 and 1.8 V for heterojunctions prepared in pure Tu and with CTAB surfactant, respectively. Decreasing the turn-on voltage after adding the CTAB can be ascribed to a

Optically and electrically driven nanoantennas

• Monika Fleischer,
• Dai Zhang and
• Alfred J. Meixner

Beilstein J. Nanotechnol. 2020, 11, 1542–1545, doi:10.3762/bjnano.11.136

• spectroscopy (SERS); tip-enhanced Raman spectroscopy (TERS); tunnel junction; Editorial Optical antennas + serve to confine the energy of photons transported by a light wave to a tiny volume much smaller than the wavelength; or reversely, to convert the energy of an evanescent field that oscillates at optical

• low-background medical imaging or nanolasers [33]. Electrically driven optical antennas emit light when a bias voltage is applied to the contacted antenna arms that are forming a tunnel junction. Inelastic electron tunneling through the gap excites gap–plasmon oscillations leading to the emission of

• subject. Energy-level engineering in the gap by introducing molecules into the tunnel junction provides an additional handle to modulate photon emission from an electrically controlled optical antenna. Light emission by tunneling through a single molecule opens the door to combine electronics and quantum

Adsorption and self-assembly of porphyrins on ultrathin CoO films on Ir(100)

• Feifei Xiang,
• Tobias Schmitt,
• Marco Raschmann and
• M. Alexander Schneider

Beilstein J. Nanotechnol. 2020, 11, 1516–1524, doi:10.3762/bjnano.11.134

• imaged as a protrusion on CoO for tunneling bias voltages of ±2.0 V around the Fermi energy. In Figure 5 we analyze the behavior of 1 on the 2BL CoO film. Imaging of 1 proved difficult at liquid-nitrogen temperatures since the molecules are easily pulled by the STM tip even at junction resistances of RT

Atomic defect classification of the H–Si(100) surface through multi-mode scanning probe microscopy

• Jeremiah Croshaw,
• Thomas Dienel,
• Taleana Huff and
• Robert Wolkow

Beilstein J. Nanotechnol. 2020, 11, 1346–1360, doi:10.3762/bjnano.11.119

• tunnelling hydrogen microscopy (STHM) [35]. Rather than direct tip functionalization as done in nc-AFM, STHM in these original studies was achieved by leaking in a background of molecular hydrogen (≈10−9 Torr) until an H2 molecule became trapped in the tip–sample junction. Here, we achieve STHM-like

• for the unterminated portion (top). This demonstrates that the dark contrast is a result of the high reactivity between two different species – silicon and hydrogen – interacting with each other in the tip–sample junction, regardless of which species functionalizes the tip. The alternating asymmetry

Cryogenic low-noise amplifiers for measurements with superconducting detectors

• Ilya L. Novikov,
• Boris I. Ivanov,
• Dmitri V. Ponomarev and
• Aleksey G. Vostretsov

Beilstein J. Nanotechnol. 2020, 11, 1316–1320, doi:10.3762/bjnano.11.115

• bipolar junction transistor technology. The amplifiers show high gain values of more than 60 dB at 300, 77, and 48 K. The minimum voltage noise spectral density was achieved at 77 K and corresponded to 0.33 nV/Hz0.5 with a flicker noise of 20 Hz. The maximum voltage gain was 70 dB at 77 K for a frequency

• low-frequency and low-noise amplifiers are commonly based on Si bipolar junction transistor (BJT) technology and junction field-effect transistor (JFET) technology. Since external interferences can be compensated by differential input circuits, differential amplifier designs are used for these

• applicability of commercially available Si bipolar transistors for cryogenics. Design and preliminary performance of cryogenic low-noise differential amplifiers, based on matched parallel connected pairs of commercially available bipolar junction transistors, at temperatures of 77 and 50 K are presented. This

Role of redox-active axial ligands of metal porphyrins adsorbed at solid–liquid interfaces in a liquid-STM setup

• Thomas Habets,
• Sylvia Speller and
• Johannes A. A. W. Elemans

Beilstein J. Nanotechnol. 2020, 11, 1264–1271, doi:10.3762/bjnano.11.110

• likely. An enhanced solubility of the ions in the aromatic solvent 1-phenyloctane may be the result of attractive anion–π interactions [24]. Conclusion MnTUPCl dissolved in 1-phenyloctane and placed in a tunnel junction yields high additional currents. We attribute them to Faradaic currents and put

3D superconducting hollow nanowires with tailored diameters grown by focused He⁺ beam direct writing

• Rosa Córdoba,
• Alfonso Ibarra,
• Dominique Mailly,
• Isabel Guillamón,
• Hermann Suderow and
• José María De Teresa

Beilstein J. Nanotechnol. 2020, 11, 1198–1206, doi:10.3762/bjnano.11.104

• for quantum computation. The behavior of nanosized superconductors as one-dimensional quantum oscillators [1], Josephson junction arrays [2], electronic transport devices [3][4][5][6][7], very small-scale devices [8][9], micrometer-scale coolers [10], or thermal and spin sensors [11][12] has been

Nonadiabatic superconductivity in a Li-intercalated hexagonal boron nitride bilayer

• Kamila A. Szewczyk,
• Izabela A. Domagalska,
• Artur P. Durajski and
• Radosław Szczęśniak

Beilstein J. Nanotechnol. 2020, 11, 1178–1189, doi:10.3762/bjnano.11.102

• obtained using the tunneling junction. Hence, any experimental results directly relate to the predictions of the Eliashberg formalism taking into account the effect of vertex corrections. Additionally, in Figure 3d–f we plotted the form of the order parameter on the real axis (T = 4 K). The real part of

Revealing the local crystallinity of single silicon core–shell nanowires using tip-enhanced Raman spectroscopy

• Marius van den Berg,
• Ardeshir Moeinian,
• Arne Kobald,
• Yu-Ting Chen,
• Anke Horneber,
• Steffen Strehle,
• Alfred J. Meixner and
• Dai Zhang

Beilstein J. Nanotechnol. 2020, 11, 1147–1156, doi:10.3762/bjnano.11.99

• oriented crystalline grains. b) The fast Fourier transformation image of the indicated area in panel a. c) TEM image showing a migrated metal particle on a SiNW. d) TEM image of a Pt-catalyzed core–shell SiNW showing the morphology of the junction between SiNW core and shell. e) Pt silicide catalyst and

Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

• Elena I. Monaico,
• Eduard V. Monaico,
• Veaceslav V. Ursaki,
• Shashank Honnali,
• Vitalie Postolache,
• Karin Leistner,
• Kornelius Nielsch and
• Ion M. Tiginyanu

Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81

• decreasing diameter, but to a lesser extent. The obtained values of responsivity and detectivity are comparable with those previously reported for a graphene/GaAs NW photodetector with a Schottky junction working at 532 nm radiation [33]. The detectivity of our photodetector is better than that reported for

Microwave photon detection by an Al Josephson junction

• Leonid S. Revin,
• Andrey L. Pankratov,
• Anna V. Gordeeva,
• Anton A. Yablokov,
• Igor V. Rakut,
• Victor O. Zbrozhek and
• Leonid S. Kuzmin

Beilstein J. Nanotechnol. 2020, 11, 960–965, doi:10.3762/bjnano.11.80

• Novgorod, Russia Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, Russia Chalmers University of Technology, SE-41296 Gothenburg, Sweden 10.3762/bjnano.11.80 Abstract An aluminium Josephson junction (JJ), with a critical current suppressed by a factor of three compared with the maximal

• through the JJ is observed, which resembles the differentiation between N and N + 1 photon absorption. Keywords: aluminium; Josephson junction; microwaves; phase diffusion; photon counter; switching current distribution; Introduction Currently, an important problem is the creation of single-photon

• ]. For the lower-frequency range, a new class of single-microwave-photon detectors is needed. With regard to this, a current-biased Josephson junction (JJ) is of particular interest for applications as a threshold detector since its phase dynamics is altered even by a weak probe field. Rich dynamics of

Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films

• Vadim Morari,
• Aida Pantazi,
• Nicolai Curmei,
• Vitalie Postolache,
• Emil V. Rusu,
• Marius Enachescu,
• Ion M. Tiginyanu and
• Veaceslav V. Ursaki

Beilstein J. Nanotechnol. 2020, 11, 899–910, doi:10.3762/bjnano.11.75

• –voltage characteristic does not fit the classical formula for a p–n junction, which should be a straight line for the forward bias in the semi-logarithmic coordinates. On the contrary, the characteristics are fit to straight lines in the double logarithmic coordinates (Figure 9c and Figure 10c). Moreover

• , the investigated heterojunctions work as photodetectors at forward bias, while a classical p–n junction should function as a photodetector at reverse bias. Since the current–voltage characteristics are fit to straight lines in the log–log coordinates, it means that they correspond to a power function

A Josephson junction based on a highly disordered superconductor/low-resistivity normal metal bilayer

• Pavel M. Marychev and
• Denis Yu. Vodolazov

Beilstein J. Nanotechnol. 2020, 11, 858–865, doi:10.3762/bjnano.11.71

• Pavel M. Marychev Denis Yu. Vodolazov Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, 603950, Russia 10.3762/bjnano.11.71 Abstract We calculate the current–phase relation (CPR) of a SN-S-SN Josephson junction based on a SN bilayer of variable thickness

• composed of a highly disordered superconductor (S) and a low-resistivity normal metal (N) with proximity-induced superconductivity. In such a junction, the N layer provides both a large concentration of phase in the weak link and good heat dissipation. We find that when the thickness of the S and the N

• layer and the length of the S constriction are about the superconducting coherence length the CPR is single-valued and can be close to a sinusoidal shape. The product IcRn can reach Δ(0)/2|e| (Ic is the critical current of the junction, Rn is its normal-state resistance, Δ(0) is the superconductor gap

Epitaxial growth and superconducting properties of thin-film PdFe/VN and VN/PdFe bilayers on MgO(001) substrates

• Wael M. Mohammed,
• Igor V. Yanilkin,
• Amir I. Gumarov,
• Airat G. Kiiamov,
• Roman V. Yusupov and
• Lenar R. Tagirov

Beilstein J. Nanotechnol. 2020, 11, 807–813, doi:10.3762/bjnano.11.65

• junction technology is currently implied to be used for the logics fabrication, however, hybrid Josephson junctions incorporating magnetic components are also considered for the mainframe computation components [9][14][15][16][17][18][19], and cache and main memories [8][20][21][22][23][24][25]. It is

• ferromagnets to improve the operation characteristics of superconductor–ferromagnet–insulator heterojunctions for superconducting spintronics applications. For example, cubic superconducting MoNx, which is a Josephson junction technology material [4][5][46], exhibits a good epitaxial match with Pd1−xFex alloys

Electromigration-induced directional steps towards the formation of single atomic Ag contacts

• Atasi Chatterjee,
• Christoph Tegenkamp and
• Herbert Pfnür

Beilstein J. Nanotechnol. 2020, 11, 680–687, doi:10.3762/bjnano.11.55

• essentially only one junction that is conducting. Such instabilities seem to be characteristic to the EM process, since they are commonly not observed in MCBJ experiments but have also been found in recent EM experiments with Cu nanocontacts [24]. Since a distribution of contacts of various sizes exist, there

Comparison of fresh and aged lithium iron phosphate cathodes using a tailored electrochemical strain microscopy technique

• Matthias Simolka,
• Hanno Kaess and
• Kaspar Andreas Friedrich

Beilstein J. Nanotechnol. 2020, 11, 583–596, doi:10.3762/bjnano.11.46

• mechanisms are piezoelectricity, flexoelectricity and electrostriction. Further contributions are possible by deformation potential generation, electron–hole formation, coupling of electrons and phonons, electrochemical side reactions in the tip–sample junction, electrostatic interaction, and volume

• (Rtip around 30 nm or even larger), the ESM signal would exhibit rather diffuse signal allocation. Therefore, it is more reasonable to assume a limited probed volume close to the surface of the tip–sample junction of only a few nanometres in depth. Dependency of the ESM signal intensity during stepwise

• excitation dc-voltage amplitudes, the short excitation time of only 10 ms and the inert gas atmosphere. This prevents the generation of a water droplet meniscus at the tip–sample junction, which can serve as an electrolyte for electrochemical reactions. The increase of the ESM signal intensity for the fresh

High dynamic resistance elements based on a Josephson junction array

• Konstantin Yu. Arutyunov and
• Janne S. Lehtinen

Beilstein J. Nanotechnol. 2020, 11, 417–420, doi:10.3762/bjnano.11.32

• effect. Keywords: dynamic resistance; Josephson junction array; nanoelectronics; quantum phase slip; superconductivity; Ti nanowires; Introduction The field of modern nanoelectronics is facing stagnation with respect to further miniaturization, deviating from Moore’s law [1]. Typically, two main reason

• ), including superconducting systems based on the Josephson effect. It has been shown that physics behind a Josephson junction (JJ) is dual to a quantum phase-slip junction (QPSJ) [3], whereby the corresponding QPSJ-based qbit operation has also been demonstrated [4]. At the same time, the quantum dynamics of

• connected in series, each being a Al–AlOx–Al junction with a gap of about 400 µV. The charging energy, Ec = e2/2C, of each SIS contact (considering it to be a plate capacitor with dielectric constant ε ≈ 10, area 100 × 100 nm and distance between plates ≈2 nm) is about two orders of magnitude higher than

Implementation of data-cube pump–probe KPFM on organic solar cells

• Benjamin Grévin,
• Olivier Bardagot and
• Renaud Demadrille

Beilstein J. Nanotechnol. 2020, 11, 323–337, doi:10.3762/bjnano.11.24

• be taken into account, which renders the interpretation of IM-KPFM data even more difficult. Upon illumination, the capacitive junction formed by the cantilever tip and the conducting substrate onto which the organic layer is deposited is indeed reduced due to photogenerated carriers [19]. As a first

• varying illumination state. Upon illumination, the charge carrier density increases leading not only to a reduction of the tip–sample capacitive junction but also to an increase in the KPFM S/N ratio. Regarding the basic operating principles of pp-KPFM, it is unclear why photoinduced capacitive changes

Anomalous current–voltage characteristics of SFIFS Josephson junctions with weak ferromagnetic interlayers

• Tairzhan Karabassov,
• Anastasia V. Guravova,
• Aleksei Yu. Kuzin,
• Elena A. Kazakova,
• Shiro Kawabata,
• Boris G. Lvov and
• Andrey S. Vasenko

Beilstein J. Nanotechnol. 2020, 11, 252–262, doi:10.3762/bjnano.11.19

• situation is resolved by addition of an insulating barrier (I) yielding a SFIFS layer sequence, which allows one to realize much larger values of the product IcRn, where Ic is the critical current of the junction and Rn its normal state resistance [36][37][38]. Recently, SIFS junctions attracted much

• the SIFS CVC similar to the I–V curve of the FIS junction. In this paper we study the current–voltage characteristics of SFIFS Josephson junctions with two ferromagnetic interlayers. SFIFS structures were also proposed for various applications in memory elements [56][57][58], single-flux quantum

• circuits [47], and as injectors in superconductor–ferromagnetic transistors [81][82][83][84], which can be used as amplifiers for memory, digital, and RF applications. In this work we study the current–voltage characteristics of a SFIFS junction as shown below in Figure 1. We present a quantitative model

Nonequilibrium Kondo effect in a graphene-coupled quantum dot in the presence of a magnetic field

• Levente Máthé and
• Ioan Grosu

Beilstein J. Nanotechnol. 2020, 11, 225–239, doi:10.3762/bjnano.11.17

• be realized by a molecular junction or a single quantum dot (QD) or many QDs in a particular arrangement coupled to charge reservoirs by metallic [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31], ferromagnetic [32][33][34][35] or graphene electrodes [36][37][38

Rational design of block copolymer self-assemblies in photodynamic therapy

• Maxime Demazeau,
• Laure Gibot,
• Anne-Françoise Mingotaud,
• Patricia Vicendo,
• Clément Roux and
• Barbara Lonetti

Beilstein J. Nanotechnol. 2020, 11, 180–212, doi:10.3762/bjnano.11.15

Molecular architectonics of DNA for functional nanoarchitectures

• Debasis Ghosh,
• Lakshmi P. Datta and
• Thimmaiah Govindaraju

Beilstein J. Nanotechnol. 2020, 11, 124–140, doi:10.3762/bjnano.11.11

• enabled the construction of complex architectonics through DNA origami [37]. The self-recognition characteristics of DNA allows the development of a wide array of DNA-based nanoarchitectures by employing an array of designer sequences and motifs. In the earliest designs, the Holliday junction structure of

Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

• Botond Sánta,
• Dániel Molnár,
• Patrick Haiber,
• Agnes Gubicza,
• Edit Szilágyi,
• Zsolt Zolnai,
• András Halbritter and
• Miklós Csontos

Beilstein J. Nanotechnol. 2020, 11, 92–100, doi:10.3762/bjnano.11.9

• triangular driving voltage signal, Vdrive, was applied to the memristive junction and a series resistor with corresponding resistances of RM and RS, respectively. Typical values of RS were in the range of 50–1000 Ω. The current was monitored by a current amplifier whereas the Vbias voltage drop on the

• the presence of continuous filaments in both states. At positive voltage the presence of the series resistor is considered as restrictive factor for further resistance change, whereas at negative voltage it is the saturation with Ag+ ions in the junction neighborhood. These two factors allow us to

• keep the junction resistance in the targeted metallic resistance range, where the nonlinear tunneling I(V) characteristics, which are unfavorable for neuromorphic operations, are avoided. These characteristics were further investigated as a function of the amplitude and the frequency fdrive of the

Prestress-loading effect on the current–voltage characteristics of a piezoelectric p–n junction together with the corresponding mechanical tuning laws

• Wanli Yang,
• Shuaiqi Fan,
• Yuxing Liang and
• Yuantai Hu

Beilstein J. Nanotechnol. 2019, 10, 1833–1843, doi:10.3762/bjnano.10.178

• non-equilibrium minority carriers under the influence of a piezo potential and to calculate the corresponding current–voltage (I–V) characteristics of a piezoelectric p–n junction exposed to mechanical loading. An effective solution to describe this non-equilibrium process has been put forward

• including two concepts: the influence of prestress loading on p–n junctions in a quasi-electrostatic thermal equilibrium and the perturbation of small fields superposed on the obtained quasi-electrostatic solutions. A few useful results are obtained through this loaded p–n junction model. Under a forward

• -bias voltage, a tensile (compressive) loading raises (reduces) the potential barrier of the space charge zone (SCZ), i.e., produces an equivalent reverse- (forward-) electric voltage on the SCZ. When a piezoelectric p–n junction is exposed to a reverse-bias voltage, the current density monotonically