Contact splitting in dry adhesion and friction: reducing the influence of roughness

• Jae-Kang Kim and
• Michael Varenberg

Beilstein J. Nanotechnol. 2019, 10, 1–8, doi:10.3762/bjnano.10.1

• Jae-Kang Kim Michael Varenberg George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA 10.3762/bjnano.10.1 Abstract Splitting a large contact area into finer, sub-contact areas is thought to result in higher adaptability to rough surfaces

Femtosecond laser-assisted fabrication of chalcopyrite micro-concentrator photovoltaics

• Franziska Ringleb,
• Stefan Andree,
• Berit Heidmann,
• Jörn Bonse,
• Katharina Eylers,
• Owen Ernst,
• Torsten Boeck,
• Martina Schmid and
• Jörg Krüger

Beilstein J. Nanotechnol. 2018, 9, 3025–3038, doi:10.3762/bjnano.9.281

• enhance the efficiency of planar-cell technologies while saving absorber material. Here, two laser-based bottom-up processes for the fabrication of regular arrays of CuInSe2 and Cu(In,Ga)Se2 microabsorber islands are presented, namely one approach based on nucleation and one based on laser-induced forward

• for low-cost solar power. In the present review, we provide an overview about research carried out on micro-concentrator solar cells – a new cell concept that has been emerging in recent years – using Cu(In,Ga)Se2 (CIGSe) as absorber material. The review focuses on two different laser-based

• fabrication methods for microabsorbers. In thin-film photovoltaics, Cu(In,Ga)Se2 (CIGSe) solar cells with an efficiency record of 22.9% for planar cells [2] and 19.2% for sub-modules [3] are among the leading technologies. Figure 1 shows the structure of a planar CIGSe solar cell representing the current

Size limits of magnetic-domain engineering in continuous in-plane exchange-bias prototype films

• Alexander Gaul,
• Daniel Emmrich,
• Timo Ueltzhöffer,
• Henning Huckfeldt,
• Hatice Doğanay,
• Johanna Hackl,
• Muhammad Imtiaz Khan,
• Daniel M. Gottlob,
• Gregor Hartmann,
• André Beyer,
• Dennis Holzinger,
• Slavomír Nemšák,
• Claus M. Schneider,
• Armin Gölzhäuser,
• Günter Reiss and
• Arno Ehresmann

Beilstein J. Nanotechnol. 2018, 9, 2968–2979, doi:10.3762/bjnano.9.276

• patterning by Ga ions in a FIB (suffering from destruction of the thin films due to high sputter yields) [32][33], available patterning methods do not achieve the necessary resolution. Currently, the smallest engineered domains in films with in-plane anisotropy are 300 nm wide stripes produced by thermally

Charged particle single nanometre manufacturing

• Philip D. Prewett,
• Cornelis W. Hagen,
• Claudia Lenk,
• Steve Lenk,
• Marcus Kaestner,
• Tzvetan Ivanov,
• Ahmad Ahmad,
• Ivo W. Rangelow,
• Xiaoqing Shi,
• Stuart A. Boden,
• Alex P. G. Robinson,
• Dongxu Yang,
• Sangeetha Hari,
• Marijke Scotuzzi and
• Ejaz Huq

Beilstein J. Nanotechnol. 2018, 9, 2855–2882, doi:10.3762/bjnano.9.266

• electrons from the resist–substrate interface result in overlap of two features written in close proximity [20]. Ions are over a thousand times heavier than electrons and are consequently not backscattered to the same degree. Mention should also be made of another problem of Ga+ lithography which causes a

• suppressed the adoption of the original Ga+ SIBL technology for silicon microelectronics and other applications. There has, however, been a paradigm shift in ion beam microscopy and lithography with the development in 2006 of the atomic level ion source (ALIS) [23]. This can be used to provide a focused beam

• ten times smaller than for the Ga+ LMIS which has an ultimate source size of 3 nm [26]. The ALIS source consequently has an extremely high brightness estimated to be approximately 5 × 109 A·cm−2·sr−1 at an ion energy of ca. 30 keV. The ALIS source has been incorporated into the ORION scanning ion

Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Eleonora M. Danilina and
• Sergei N. Chebotarev

Beilstein J. Nanotechnol. 2018, 9, 2794–2801, doi:10.3762/bjnano.9.261

• Bi = 148 pm and In = 142 pm atoms are very close. Therefore, in the InAs QD growth process on the GaAs1−xBix surface, In adatom surface diffusion can be realized both through substituting Ga or Bi vacancies. Increase of QD heights in the InAs/GaAs0.95Bi0.05 heterosystem is an indirect demonstration

High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb)_1−x(MnSb)_x alloy

• Leonid N. Oveshnikov,
• Elena I. Nekhaeva,
• Alexey V. Kochura,
• Alexander B. Davydov,
• Mikhail A. Shakhov,
• Sergey F. Marenkin,
• Oleg A. Novodvorskii,
• Alexander P. Kuzmenko,
• Alexander L. Vasiliev,
• Boris A. Aronzon and
• Erkki Lahderanta

Beilstein J. Nanotechnol. 2018, 9, 2457–2465, doi:10.3762/bjnano.9.230

• doped by Mn [1][2][3]. Among these systems, the most well-known and extensively studied is Ga1−xMnxAs. Here Mn atoms substitute Ga atoms and establish a ferromagnetic state realized through carrier-induced indirect exchange between Mn atoms by a Zener–RKKY mechanism accompanied by the spin polarization

• injectors and a micromanipulator (Omniprobe, US). A 2 μm Pt layer was deposited on the surface of the sample prior to the cross-section preparation by FIB milling. Sections of approximately 8 × 5 μm2 area and 2 μm thickness were cut by 30 kV Ga+ ions, removed from the sample and then attached to the

• Omniprobe semiring (Omniprobe, US). Final thinning was performed with 5 kV Ga+ ions followed by cleaning by 2 keV Ga+ ions for electron transparency. All specimens were studied in a scanning/transmission electron microscope Titan 80-300 (FEI, US) equipped with a spherical aberration (Cs) corrector (electron

Lead-free hybrid perovskites for photovoltaics

• Oleksandr Stroyuk

Beilstein J. Nanotechnol. 2018, 9, 2209–2235, doi:10.3762/bjnano.9.207

• have been employed as nanometer-thin-film light harvesters, such as Cu(Ga)InS(Se)2 or CdTe, showing a light conversion efficiency of up to 21% [1][2]. Progress in dye-sensitized solar cells (reaching ≈12% efficiency [1][2]) has stimulated attempts in using metal chalcogenide nanocrystals (NCs) as

High-throughput synthesis of modified Fresnel zone plate arrays via ion beam lithography

• Kahraman Keskinbora,
• Umut Tunca Sanli,
• Margarita Baluktsian,
• Corinne Grévent,
• Markus Weigand and
• Gisela Schütz

Beilstein J. Nanotechnol. 2018, 9, 2049–2056, doi:10.3762/bjnano.9.194

• them tolerable regarding imaging performance, though they may be expected to reduce the total transmitted light. With a critical length of 60 nm of the outermost period and an effective ∆r of 30 nm, the FZP design was a challenging task for direct-write Ga+ ion beam lithography. Its successful

• characterization of the FZPs The 100 nm gold films were sputtered using a Leica EM ACE600 on 50 nm thick commercial Si3N4 membranes (Silson), without any rotation or tilt. The FZPs were fabricated using a Nova Nanolab600 (FEI) attached with an Elphy Multibeam (Raith) pattern generator. A 30 keV, 30 pA Ga+ focused

• written in the gold film using a focused Ga+ ion beam. Several fabrication strategies are shown in b), c) and d). In b) a multi-pass exposure (MP-E) scheme with drift correction steps in between each cycle is followed. MP-E is a good strategy for large patterns and thicker gold films [35][36]. In c) a

Synthesis of rare-earth metal and rare-earth metal-fluoride nanoparticles in ionic liquids and propylene carbonate

• Marvin Siebels,
• Lukas Mai,
• Laura Schmolke,
• Kai Schütte,
• Juri Barthel,
• Junpei Yue,
• Jörg Thomas,
• Bernd M. Smarsly,
• Anjana Devi,
• Roland A. Fischer and
• Christoph Janiak

Beilstein J. Nanotechnol. 2018, 9, 1881–1894, doi:10.3762/bjnano.9.180

• study the catalytic properties of the obtained intermetallic M/RE-NPs in extension of our previous work on Ni/Ga nanophases derived from organometallic precursors by co-thermolysis in ILs and PC [59]. Experimental All synthesis experiments were carried out with Schlenk techniques under nitrogen or argon

Magnetic properties of Fe₃O₄ antidot arrays synthesized by AFIR: atomic layer deposition, focused ion beam and thermal reduction

• Juan L. Palma,
• Alejandro Pereira,
• Raquel Álvaro,
• José Miguel García-Martín and
• Juan Escrig

Beilstein J. Nanotechnol. 2018, 9, 1728–1734, doi:10.3762/bjnano.9.164

• have obtained a deposition rate lower than that obtained in [31], but it is important to note that the substrate used was different in both cases. Antidot arrays were directly etched in the continuous film using an IonLine FIB machine with 30 keV Ga ions, and opening of 30 μm, 17.5 pA ion current and a

Friction force microscopy of tribochemistry and interfacial ageing for the SiO_x/Si/Au system

• Christiane Petzold,
• Marcus Koch and
• Roland Bennewitz

Beilstein J. Nanotechnol. 2018, 9, 1647–1658, doi:10.3762/bjnano.9.157

• thickness that allowed for TEM analysis. The FIB lamella was produced by first depositing a layer of platinum, starting with an electron beam at 2 kV and subsequently using the Ga ion beam at 30 kV until the platinum layer had reached a thickness of about 2.5 µm. The lamella was cut with the Ga ion beam at

• 30 kV and 7 nA. Finally, the lamella was cleaned from both sides at 2 kV and 0.26 nA using the Ga ion beam. Results Atomic-scale friction on oxidized Si(100) and on Au(111) Sliding an intact Au/Si tip against a non-reactive surface (Au(111) or oxidized Si(100)) typically resulted in friction values

Light extraction efficiency enhancement of flip-chip blue light-emitting diodes by anodic aluminum oxide

• Yi-Ru Huang,
• Yao-Ching Chiu,
• Kuan-Chieh Huang,
• Shao-Ying Ting,
• Po-Jui Chiang,
• Chih-Ming Lai,
• Chun-Ping Jen,
• Snow H. Tseng and
• Hsiang-Chen Wang

Beilstein J. Nanotechnol. 2018, 9, 1602–1612, doi:10.3762/bjnano.9.152

• with Ga-doped zinc oxide (GZO)/GaN as the base layer and then reducing the total reflectivity by changing the shape, thickness, and density of the microstructure through dry etching [12]. Li et al. increased the LEE of an InGaN-monolayer quantum-well LED by 1.8–1.9 times relative to that of a

• deposition apparatus. An inductively coupled plasma etcher was used to prepare periodic arrays with a depth of 1.5 μm on the PSS. Trimethylgallium, trimethylindium, ammonia, bicyclopentadienyl magnesium, and silane served as the precursors of Ga, In, N, Mg, and Si, respectively. The epitaxial structure of

Correlative electrochemical strain and scanning electron microscopy for local characterization of the solid state electrolyte Li_1.3Al_0.3Ti_1.7(PO₄)₃

• Nino Schön,
• Deniz Cihan Gunduz,
• Shicheng Yu,
• Hermann Tempel,
• Roland Schierholz and
• Florian Hausen

Beilstein J. Nanotechnol. 2018, 9, 1564–1572, doi:10.3762/bjnano.9.148

• in Figure 4b. AFM topography as well as ESM amplitude signal is shown in Figure 4c,d, respectively. In comparison with hand polished samples (see Figure 2b,d) a smoother surface finish was obtained. Nevertheless, the Ga-ion beam produced some trenches due to the curtaining effect. The hand-polished

Disorder-induced suppression of the zero-bias conductance peak splitting in topological superconducting nanowires

• Jun-Tong Ren,
• Hai-Feng Lü,
• Sha-Sha Ke,
• Yong Guo and
• Huai-Wu Zhang

Beilstein J. Nanotechnol. 2018, 9, 1358–1369, doi:10.3762/bjnano.9.128

• the bare Green’s function of the central region without coupling to the leads (tL = tR = 0), where In×n is the n × n identity matrix. Since Gr is already given and the advanced Green’s function Ga can be obtained from Gr = (Ga)†, it is now straightforward to obtain the lesser Green’s function from the

• > = Ga −Gr holds. Finally, we define the noise Fano factor F = SL(ω = 0)/2eIL to measure the deviation from the uncorrelated Poissonian noise for which F = 1, with respect to which the shot noise can be enhanced or suppressed because the current fluctuations in the device are highly susceptible to

Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot

• Tarek A. Ameen,
• Hesameddin Ilatikhameneh,
• Archana Tankasala,
• Yuling Hsueh,
• James Charles,
• Jim Fonseca,
• Michael Povolotskyi,
• Jun Oh Kim,
• Sanjay Krishna,
• Monica S. Allen,
• Jeffery W. Allen,
• Rajib Rahman and
• Gerhard Klimeck

Beilstein J. Nanotechnol. 2018, 9, 1075–1084, doi:10.3762/bjnano.9.99

• simulated QD showing only cations (Al,Ga,In) to emphasize the randomness of the simulated alloys. The number of atoms used for the strain simulation is approximately 10 million atoms, while for band structure calculations only approximately 1.5 million atoms are used. Bond lengths and bond angle for three

Effect of annealing treatments on CeO₂ grown on TiN and Si substrates by atomic layer deposition

• Silvia Vangelista,
• Rossella Piagge,
• Satu Ek and
• Alessio Lamperti

Beilstein J. Nanotechnol. 2018, 9, 890–899, doi:10.3762/bjnano.9.83

• distribution as in [26]. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) investigation of the compositional depth profile of the CeO2/TiN/Si and CeO2/Si structures has been performed by means of a Cs+ ion beam (energy of 0.5 keV, ion current 38.0 nA) sputtering a 200 μm × 200 μm area, and a Ga+ ion

Electron interactions with the heteronuclear carbonyl precursor H₂FeRu₃(CO)₁₃ and comparison with HFeCo₃(CO)₁₂: from fundamental gas phase and surface science studies to focused electron beam induced deposition

• Ragesh Kumar T P,
• Paul Weirich,
• Lukas Hrachowina,
• Marc Hanefeld,
• Ragnar Bjornsson,
• Helgi Rafn Hrodmarsson,
• Sven Barth,
• D. Howard Fairbrother,
• Michael Huth and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2018, 9, 555–579, doi:10.3762/bjnano.9.53

Single-step process to improve the mechanical properties of carbon nanotube yarn

• Maria Cecilia Evora,
• Xinyi Lu,
• Nitilaksha Hiremath,
• Nam-Goo Kang,
• Kunlun Hong,
• Roberto Uribe,
• Gajanan Bhat and
• Jimmy Mays

Beilstein J. Nanotechnol. 2018, 9, 545–554, doi:10.3762/bjnano.9.52

• Department, University of Georgia, Athens, GA 30602, USA 10.3762/bjnano.9.52 Abstract Carbon nanotube (CNT) yarns exhibit low tensile strength compared to conventional high-performance carbon fibers due to the facile sliding of CNTs past one another. Electron beam (e-beam) irradiation was employed for in a

Ultralight super-hydrophobic carbon aerogels based on cellulose nanofibers/poly(vinyl alcohol)/graphene oxide (CNFs/PVA/GO) for highly effective oil–water separation

• Zhaoyang Xu,
• Huan Zhou,
• Sicong Tan,
• Xiangdong Jiang,
• Weibing Wu,
• Jiangtao Shi and
• Peng Chen

Beilstein J. Nanotechnol. 2018, 9, 508–519, doi:10.3762/bjnano.9.49

• Zhejiang Lishui, China. Graphite powder (40 μm), used as the source for GO, was obtained from Qingdao Henglide Graphite Co., Ltd. Poly(vinyl alcohol) (PVA, Mw ≈ 95,000 g/mol), glutaraldehyde (GA, crosslinker, 25 wt % in H2O), potassium hydroxide (KOH), Sudan III, acetic acid (CH3COOH), hydrogen peroxide

Al₂O₃/TiO₂ inverse opals from electrosprayed self-assembled templates

• Arnau Coll,
• Sandra Bermejo,
• David Hernández and
• Luís Castañer

Beilstein J. Nanotechnol. 2018, 9, 216–223, doi:10.3762/bjnano.9.23

• (Network of Excellence ‘Nanophotonics for Energy’ GA 248855). SEM and optical measurements were performed at CRNE. The authors thank Dr. Trifon Trifonov and Dr. Álvaro Blanco for their helpful discussions.

Bombyx mori silk/titania/gold hybrid materials for photocatalytic water splitting: combining renewable raw materials with clean fuels

• Stefanie Krüger,
• Michael Schwarze,
• Otto Baumann,
• Christina Günter,
• Michael Bruns,
• Christian Kübel,
• Dorothée Vinga Szabó,
• Rafael Meinusch,
• Verónica de Zea Bermudez and
• Andreas Taubert

Beilstein J. Nanotechnol. 2018, 9, 187–204, doi:10.3762/bjnano.9.21

• ), calcium chloride dihydrate (CaCl2·2H2O, ≥99%, Carl Roth), ethanol (EtOH; 99%, VWR), ethyl acetoacetate (EtAcAc, 99%, Alfa Aesar), glutaraldehyde solution (GA, 25% in H2O, Sigma-Aldrich), hydrogen tetrachloridoaurate(III) trihydrate (HAuCl4·3H2O, 99.99%, Alfa Aesar), poly(ethylene oxide) (PEO780, nominal

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

• Alexey D. Bolshakov,
• Alexey M. Mozharov,
• Georgiy A. Sapunov,
• Igor V. Shtrom,
• Nickolay V. Sibirev,
• Vladimir V. Fedorov,
• Evgeniy V. Ubyivovk,
• Maria Tchernycheva,
• George E. Cirlin and
• Ivan S. Mukhin

Beilstein J. Nanotechnol. 2018, 9, 146–154, doi:10.3762/bjnano.9.17

• ]. It has been previously demonstrated that solid Ga(In, Al)N alloys can be used in the production of light-emitting and light-absorbing devices covering wide spectral range [5][6]. One of the main NW features is their small footprint and large surface-to-volume ratio, which allows the growth of these

• absence of a doping flux [16]. Compared to other widely studied III–V NWs (e.g., Al(Ga, In)As), which can be synthesized by MBE on Si substrates via a vapor–liquid–solid (VLS) mechanism that uses catalyst droplets, GaN NWs grow according to the self-induced mechanism in the absence of catalyst [17][18

• reconstruction should be on the NW top polar facet [20] enabling good bonding of Ga atoms, while on nonpolar sidewalls, the adsorbed atoms are weakly bonded and diffuse to the top facet or can be desorbed. Self-induced formation of NWs has been discovered on Al2O3 [21] and was successfully reproduced on other

Involvement of two uptake mechanisms of gold and iron oxide nanoparticles in a co-exposure scenario using mouse macrophages

• Dimitri Vanhecke,
• Dagmar A. Kuhn,
• Dorleta Jimenez de Aberasturi,
• Sandor Balog,
• Ana Milosevic,
• Dominic Urban,
• Diana Peckys,
• Niels de Jonge,
• Wolfgang J. Parak,
• Alke Petri-Fink and
• Barbara Rothen-Rutishauser

Beilstein J. Nanotechnol. 2017, 8, 2396–2409, doi:10.3762/bjnano.8.239

• , ethanol, and deionized water, phosphate-buffered saline (PBS) at a 10× solution, electron microscopy grade glutaraldehyde (GA) 25% solution, D-saccharose, glycine, biotin-free and molecular biology grade albumin fraction V (BSA), and sodium cacodylate trihydrate were obtained from Carl Roth GmbH + Co. KG

• rinsing three times with PBS and once with 0.1 M cacodylate buffer (CB) and 0.1 M saccharose (pH 7.4), the cells were fixed with 2% GA in CB for 10 min at RT. Subsequently, the cells were rinsed once with CB, and three times with PBS, followed by incubation in 0.1 M glycine in PBS (GLY-PBS, pH 7.4) for 2

Substrate and Mg doping effects in GaAs nanowires

• Perumal Kannappan,
• Nabiha Ben Sedrine,
• Jennifer P. Teixeira,
• Maria R. Soares,
• Bruno P. Falcão,
• Maria R. Correia,
• Nestor Cifuentes,
• Emilson R. Viana,
• Marcus V. B. Moreira,
• Geraldo M. Ribeiro,
• Alfredo G. de Oliveira,
• Juan C. González and
• Joaquim P. Leitão

Beilstein J. Nanotechnol. 2017, 8, 2126–2138, doi:10.3762/bjnano.8.212

• cells (1.519 eV for GaAs bulk at low temperature). Additionally, Ga is more abundant and less toxic than other elements (e.g., In and Cd, respectively) involved in other compounds commonly used in thin film-based solar cells like Cu(In,Ga)Se2 and CdTe. Bulk GaAs exhibits the zincblende (ZB) crystal

• growth mechanism by drop-coating the substrate with Au colloidal nanoparticles with average diameter of 5.0 ± 0.5 nm. The growth was performed at 615 °C for 90 min, under an As4 beam equivalent pressure (BEP) of 3.8 × 10−5 torr and Ga BEP of 7.2 × 10−7 torr. The Mg doping of the nanowires was achieved by

Fluorination of vertically aligned carbon nanotubes: from CF₄ plasma chemistry to surface functionalization

• Claudia Struzzi,
• Mattia Scardamaglia,
• Jean-François Colomer,
• Alberto Verdini,
• Luca Floreano,
• Rony Snyders and
• Carla Bittencourt

Beilstein J. Nanotechnol. 2017, 8, 1723–1733, doi:10.3762/bjnano.8.173

• the 7th European Community Framework Programme “NanoCF” (grant agreement number: PIRSES-GA-2013-612577). The project FITTED-FNRS (J 0230.17) is also acknowledged.