A multi-resistance wide-range calibration sample for conductive probe atomic force microscopy measurements

• François Piquemal,
• Khaled Kaja,
• Pascal Chrétien,
• José Morán-Meza,
• Frédéric Houzé,
• Christian Ulysse and
• Abdelmounaim Harouri

Beilstein J. Nanotechnol. 2023, 14, 1141–1148, doi:10.3762/bjnano.14.94

• measurements on gold pads, this observation was systematically made for the I–V curves measured on all gold electrode arms. Through further investigations, we were able to associate this observation with the use of worn AFM diamond tips, especially formed by a p-type diamond coating on a highly doped n-type Si

Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone

• Kristjan Kalam,
• Peeter Ritslaid,
• Tanel Käämbre,
• Aile Tamm and
• Kaupo Kukli

Beilstein J. Nanotechnol. 2023, 14, 1085–1092, doi:10.3762/bjnano.14.89

• Kristjan Kalam Peeter Ritslaid Tanel Kaambre Aile Tamm Kaupo Kukli Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia 10.3762/bjnano.14.89 Abstract Polycrystalline SnO2 thin films were grown by atomic layer deposition (ALD) on SiO2/Si(100) substrates from SnI4 and O3

• , the cycle times for SnO2 were kept at 5-2-5-5 s, respectively, for the following sequence: metal precursor pulse, N2 purge pulse, O3 pulse, and N2 purge pulse. The films were grown on Si(100) cleansed and etched prior to the growth. An X-ray fluorescence spectrometer Rigaku ZSX 400 with the program

Spatial mapping of photovoltage and light-induced displacement of on-chip coupled piezo/photodiodes by Kelvin probe force microscopy under modulated illumination

• Zeinab Eftekhari,
• Nasim Rezaei,
• Hidde Stokkel,
• Jian-Yao Zheng,
• Andrea Cerreta,
• Ilka Hermes,
• Minh Nguyen,
• Guus Rijnders and
• Rebecca Saive

Beilstein J. Nanotechnol. 2023, 14, 1059–1067, doi:10.3762/bjnano.14.87

• from the top reached the Si p–n junction and generated electron–hole pairs, building a potential difference across the junction. The generated photovoltage was applied to the piezoelectric capacitor through the photolithographically defined contacts and induced mechanical displacement in the

• the Si photodiode and lead to a nonzero baseline. However, it does not affect the photovoltage as the peak-to-peak potential was calculated. Comparative measurements over a micrometric area of the sample were performed (see Supporting Information File 1). The CPD of a 1 μm2 area at the center of the

• membrane with a maximum of 946 pm, while decreasing to a few picometers at the side edges. The decay of displacement from the center to the edge is expected from the clamping effect at the edges, where the Si substrate is thicker [38]. The measured CPD shift in Figure 3b indicates that the photovoltage

Nanoarchitectonics of photothermal materials to enhance the sensitivity of lateral flow assays

• Elangovan Sarathkumar,
• Rajasekharan S. Anjana and
• Ramapurath S. Jayasree

Beilstein J. Nanotechnol. 2023, 14, 988–1003, doi:10.3762/bjnano.14.82

• materials with other functional materials have been found to be useful. Covalent organic frameworks (COFs) are a new class of organic polymers containing B, C, Si, N, and O in their backbones. Conjugation of COFs with Fe3O4 nanoparticles will yield a two to three times higher PCE than that of bare Fe3O4

Isolation of cubic Si₃P₄ in the form of nanocrystals

• Polina K. Nikiforova,
• Sergei S. Bubenov,
• Vadim B. Platonov,
• Andrey S. Kumskov,
• Nikolay N. Kononov,
• Tatyana A. Kuznetsova and
• Sergey G. Dorofeev

Beilstein J. Nanotechnol. 2023, 14, 971–979, doi:10.3762/bjnano.14.80

• engineering communities [1]. Materials based on compounds of Earth-abundant elements are extensively sought for. With regard to the Si–P system, novel compounds are still discovered, and research on nanoscale forms of silicon phosphides is ongoing. For instance, nanocrystalline cubic SiP was formed as

• inclusions in Si wafers implanted with P+ ions and laser-annealed at temperatures of 450–850 °C [2]. Recently, NPs of elemental compositions close to SiP and SiP2 have been observed in thermal annealing products of non-stoichiometric silicon oxide containing high amounts of phosphorus introduced during the

• fabrication; the resulting composition seems to arise from Si and P supersaturation levels [3][4]. The formation of precipitates in supersaturated silicon has also been considered as a possible mechanism involved in the deactivation of dopants [5][6][7]. To date, Si3P4 compounds have not been experimentally

Metal-organic framework-based nanomaterials for CO₂ storage: A review

• Ha Huu Do,
• Iqra Rabani and
• Hai Bang Truong

Beilstein J. Nanotechnol. 2023, 14, 964–970, doi:10.3762/bjnano.14.79

• groups in facilitating CO2 adsorption has been further demonstrated by Si and coworkers [28]. The authors used 2-amino-1,4-benzenedicarboxylate to fabricate an amine-containing MOF, which exhibited a high CO2 adsorption capacity of 7.2 mmol·g−1. Moreover, MOFs constructed by N-containing aromatic ring

Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

• Mathias Franz,
• Mahnaz Safian Jouzdani,
• Lysann Kaßner,
• Marcus Daniel,
• Frank Stahr and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2023, 14, 951–963, doi:10.3762/bjnano.14.78

• precursor structure is shown in Figure 2. This precursor was selected because of the following considerations: Georgi et al. provided a set of nine similar complexes with different alkynes and reported their film compositions after CVD experiments. We selected a liquid precursor without Si contaminations

Upscaling the urea method synthesis of CoAl layered double hydroxides

• Camilo Jaramillo-Hernández,
• Víctor Oestreicher,
• Martín Mizrahi and
• Gonzalo Abellán

Beilstein J. Nanotechnol. 2023, 14, 927–938, doi:10.3762/bjnano.14.76

• prepared by paint spraying on carbon paper. The optimum amount of material for the measurements was calculated by the program “Hephaestus”, which is part of the Demeter package [77]. A Si(111) double-crystal monochromator was used to obtain a monochromatic incident beam, and the intensities of incident and

• spin-coated on a Si wafer (3000 rpm, 40 s), washed with ethanol and dried afterward. For AFM, the samples were diluted in ethanol and drop-cast on a Si/SiO2 wafer. Si/SiO2 wafers were washed by spin-coating ten droplets of acetone and ten droplets of isopropanol prior to sample deposition. Scanning

Green SPIONs as a novel highly selective treatment for leishmaniasis: an in vitro study against Leishmania amazonensis intracellular amastigotes

• Brunno R. F. Verçoza,
• Robson R. Bernardo,
• Luiz Augusto S. de Oliveira and
• Juliany C. F. Rodrigues

Beilstein J. Nanotechnol. 2023, 14, 893–903, doi:10.3762/bjnano.14.73

• software to estimate them. CC50 values are essential to calculate the selective index (SI), and both quantities are important to understand how effective the nanoparticles are against the parasite while being less toxic for mammalian cells (Table 1). The SI revealed that the SPIONs were highly selective

• ) destroyed amastigotes (D, triangle). F, flagellum; k, kinetoplast; LB, lipid body; M, mitochondrion; and N, nucleus. Estimated CC50 and SI obtained after the analysis of the macrophage cytotoxicity assay previously published in [9] using the GraphPad Prism software. Selectivity index values for different

Ultralow-energy amorphization of contaminated silicon samples investigated by molecular dynamics

• Grégoire R. N. Defoort-Levkov,
• Alan Bahm and
• Patrick Philipp

Beilstein J. Nanotechnol. 2023, 14, 834–849, doi:10.3762/bjnano.14.68

• some of the Si atoms get displaced, modifying the local order by broadening the peaks, while the crystalline structure is maintained in other places, keeping a long-range order above 4 Å with the presence of distinct peaks. The graphs in Figure 4b and Figure 4e represent this transition region and are

• peak intensities related to water species (i.e., from Si–O and Si–H interactions) are strongly reduced, which indicates a significant removal of the contaminant. This translates to an overall increased sputtering yield as will be discussed in a later section. To further confirm the hypothesis that

Silver-based SERS substrates fabricated using a 3D printed microfluidic device

• Phommachith Sonexai,
• Minh Van Nguyen,
• Bui The Huy and
• Yong-Ill Lee

Beilstein J. Nanotechnol. 2023, 14, 793–803, doi:10.3762/bjnano.14.65

• centrifuged at 12,000 rpm for 5 min to separate the Ag NPs solution and remove the oil phase. Finally, the Ag NPs suspension was stored in a dark vial at room temperature for further experiments. Fabrication of porous silicon (PS) substrate A p-type Si(100) wafer with a resistivity of 0.01–0.09 Ω·cm was used

• is more cost-effective, straightforward, and accessible. The chemical treatment of PDMS and the glass plate aims to decorate their surfaces with silanol groups (Si–OH), enabling the two surfaces to bond chemically at the atomic level [49]. To determine the droplet size, we used two dye solutions and

In situ magnesiothermic reduction synthesis of a Ge@C composite for high-performance lithium-ion batterie anodes

• Ha Tran Huu,
• Ngoc Phi Nguyen,
• Vuong Hoang Ngo,
• Huy Hoang Luc,
• Minh Kha Le,
• Minh Thu Nguyen,
• My Loan Phung Le,
• Hye Rim Kim,
• In Young Kim,
• Sung Jin Kim,
• Van Man Tran and
• Vien Vo

Beilstein J. Nanotechnol. 2023, 14, 751–761, doi:10.3762/bjnano.14.62

• than Si at room temperature) conductivity [14]. However, electrodes based on alloying suffer from deterioration during repeated lithiation/delithiation because of the large variation in volume. Despite the lower volume change ratio compared to Si (370% for Ge and 400% for Si) and the structural

• robustness, for example, a higher resistance to pulverization than Si, the durability of Ge-based anode is not sufficient for practical applications [14]. To overcome this limitation, nanoscale control and composite design are two effective strategies [15][16][17][18][19]. In addition to various Ge

Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectives

• Mattia da Lisca,
• José Alvarez,
• James P. Connolly,
• Nicolas Vaissiere,
• Karim Mekhazni,
• Jean Decobert and
• Jean-Paul Kleider

Beilstein J. Nanotechnol. 2023, 14, 725–737, doi:10.3762/bjnano.14.59

• crosstalk [17]. The laser beam deflection system in our AFM employs a laser wavelength of 1310 nm, which is well below the bandgap of our sample; therefore, the parasitic laser absorption, which may interfere with the KPFM measurement, is reduced to negligible levels [13]. Highly doped n+-Si ARROW EFM tips

Humidity-dependent electrical performance of CuO nanowire networks studied by electrochemical impedance spectroscopy

• Jelena Kosmaca,
• Juris Katkevics,
• Jana Andzane,
• Raitis Sondors,
• Liga Jasulaneca,
• Raimonds Meija,
• Kiryl Niherysh,
• Yelyzaveta Rublova and
• Donats Erts

Beilstein J. Nanotechnol. 2023, 14, 683–691, doi:10.3762/bjnano.14.54

• of nanostructured CuO, and indicate directions for further applications in humidity sensors and other systems with nanowire interconnects. Results and Discussion The synthesized CuO nanowires (Figure 1a) were assembled between arrays of lithographically defined Au microelectrodes on a Si/SiO2 chip

• naturally. The substrates were submerged in pure isopropanol (IPA) and ultrasonicated for 3 s to release the CuO nanowires. These nanowires were assembled on arrays of Cr/Au (3/60 nm) microelectrodes lithographically pre-patterned on a commercially available Si/SiO2 wafer substrate (MTI Corporation) diced

Transferability of interatomic potentials for silicene

• Marcin Maździarz

Beilstein J. Nanotechnol. 2023, 14, 574–585, doi:10.3762/bjnano.14.48

• -principles method and then to test the ability of different interatomic potentials to reproduce these properties. Methods Analyzing the available literature concerning all phases of single-layer Si, it is not feasible to find all structural, mechanical, and phonon data obtained in one consistent way. The

• ] as an exchange–correlation functional, and optimized norm-conserving Vanderbilt pseudopotential [22] (ONCVPP) are similar. Cut-off energy and electron configuration of Si were used in the DFT calculations according to the pseudopotential and Gaussian smearing scheme with tsmear (Ha) = 0.02. To

• embedded-atom method (MEAM) potential for Si fitted to silicon interstitials SW1985 [38]: the Stillinger–Weber (SW) potential fitted to solid and liquid forms of Si SW2014 [39]: the Stillinger–Weber (SW) potential fitted to phonon dispersion curves of a single-layer Si sheet EDIP [40]: the environment

ZnO-decorated SiC@C hybrids with strong electromagnetic absorption

• Liqun Duan,
• Zhiqian Yang,
• Yilu Xia,
• Xiaoqing Dai,
• Jian’an Wu and
• Minqian Sun

Beilstein J. Nanotechnol. 2023, 14, 565–573, doi:10.3762/bjnano.14.47

• of Si atoms from SiCnw in the carbonization atmosphere containing a low concentration of chlorine gas [24]. Figure 2 shows TEM and HRTEM images of the final SiC@C-ZnO samples. The SCZ samples are composed of SiC, carbon, and ZnO particles. Obviously, the hybrids are characterized by SiC cores and

• elements (C, Si, O, and Zn) have been determined by XPS in all SCZ samples, as shown in Figure 3. The survey scans of the SCZ samples exhibit major peaks assigned to C 1s (ca. 284 eV), O 1s (ca. 532 eV), Si 2p (ca. 100 eV), Zn 2p (ca. 1022 eV and ca. 1045 eV). The two Zn 2p peaks correspond to Zn 2p3/2 and

• results. In contrast, the relative intensities of the Si 2p and C 1s peaks gradually decrease at the same time. The peaks at 100 and 103.5 eV are related to Si 2p1/2 and Si 2p3/2, respectively. Table 1 provides the elemental compositions (atom %) on the SCZ sample surfaces as determined by XPS. The

SERS performance of GaN/Ag substrates fabricated by Ag coating of GaN platforms

• Magdalena A. Zając,
• Bogusław Budner,
• Malwina Liszewska,
• Bartosz Bartosewicz,
• Łukasz Gutowski,
• Jan L. Weyher and
• Bartłomiej J. Jankiewicz

Beilstein J. Nanotechnol. 2023, 14, 552–564, doi:10.3762/bjnano.14.46

• substrates fabricated using both methods, we attempted to prepare substrates with a comparable amount of deposited Ag, which was examined and controlled using atomic force microscopy (AFM). For this purpose, additional Ag layers were deposited on flat Si substrates. Based on the measured thickness of the Ag

• approximately 423 ± 5 nm thickness on a flat Si surface. In our studies, plasmonic metal was additionally deposited using one shorter and two longer deposition times to obtain GaN/Ag substrates with thinner and thicker Ag layers. As a result, GaN/Ag substrates were prepared with Ag layers deposited for 140, 280

• , 420, and 560 s, that is, with Ag layer thicknesses of 212 ± 2, 423 ± 5, 627 ± 4, and 833 ± 4 nm, respectively. The above thickness values were directly measured on a flat Si platform coated in the same processes as the GaN platforms. However, due to the different surface morphology of GaN platforms

On the use of Raman spectroscopy to characterize mass-produced graphene nanoplatelets

• Keith R. Paton,
• Konstantinos Despotelis,
• Naresh Kumar,
• Piers Turner and
• Andrew J. Pollard

Beilstein J. Nanotechnol. 2023, 14, 509–521, doi:10.3762/bjnano.14.42

• extinction at 660 nm and using an extinction coefficient of 4237 mL·mg−1·m−1 [28] yielded a concentration of 0.028 mg·mL−1. To characterize the thickness of the particles in GNPref, the dispersion was drop-cast on to a cleaned Si/SiO2 (300 nm thick oxide layer) wafer. Before deposition, the dispersion was

• diluted by a factor of 10 in fresh NMP. 10 μL of the diluted dispersion was then drop-cast on a Si/SiO2 wafer at a temperature of 200 °C. To remove residual NMP, the sample was dried overnight in a vacuum oven at 60 °C. AFM measurements of the deposited flakes were carried out using Cypher AFM (Asylum

• Research, Oxford Instruments, UK). AFM images were recorded using Si AFM probes (MikroMasch HQ:NSC15, 40 N/m, 325 kHz, MikroMasch, Bulgaria) in tapping-mode feedback. AFM images were measured in square areas between 6 μm × 6 μm and 8 μm × 8 μm using 1024 × 1024 pixels with a scan speed below 20 μm·s−1. To

A mid-infrared focusing grating coupler with a single circular arc element based on germanium on silicon

• Xiaojun Zhu,
• Shuai Li,
• Ang Sun,
• Yongquan Pan,
• Wen Liu,
• Yue Wu,
• Guoan Zhang and
• Yuechun Shi

Beilstein J. Nanotechnol. 2023, 14, 478–484, doi:10.3762/bjnano.14.38

• , Nanjing University, Nanjing 210093, China 10.3762/bjnano.14.38 Abstract A mid-infrared (MIR) focusing grating coupler (FGC) with a single circular arc element (CAE) in the front of the gratings based on a germanium-on-silicon (Ge-on-Si) platform is designed and demonstrated. It can be used equivalently

• knowledge, it is the highest coupling efficiency in a full-etch grating coupler based on Ge-on-Si. Moreover, the proposed grating coupler can be used for refractive index (RI) sensing, and the maximum sensitivity is 980.7 nm/RIU when the RI changes from 1 to 1.04. By comparing with traditional grating

• cover the wavelength of 6–15 μm. Hence, it is a suitable material for biosensors applications in the MIR band [6]. In recent years, researchers have verified the feasibility of Ge MIR waveguides on various substrate materials, such as germanium on silicon (Ge-on-Si), germanium on silicon-on-insulator

Molecular nanoarchitectonics: unification of nanotechnology and molecular/materials science

• Katsuhiko Ariga

Beilstein J. Nanotechnol. 2023, 14, 434–453, doi:10.3762/bjnano.14.35

• boron site embedded at the center of the graphene nanoribbon was investigated. Si atoms were removed by vertical manipulation with a tip (Figure 5). In this manipulation, the tip was positioned at a silicon site and then moved closer to the silicon atoms while recording the tunneling current. After the

• , oligomers are obtained by CH3–Si bond activation at 130 °C and subsequent tether removal at 200 °C to form an intermolecular silylene tether (–Me2Si–). The sample was further heated at 200 °C to accelerate silylene tether desorption and complete the desilylation Sonogashira coupling. As a result, the

• obtained with pyrene precursors, the C4Si2 rings were converted to C4Si pentagonal siloles by further heat treatment. These results demonstrate that coupling nanoarchitectonics on C–Si surfaces is possible by depositing Si atoms and, subsequently, polycyclic hydrocarbons on Au(111). It is expected that

Overview of mechanism and consequences of endothelial leakiness caused by metal and polymeric nanoparticles

• Magdalena Lasak and
• Karol Ciepluch

Beilstein J. Nanotechnol. 2023, 14, 329–338, doi:10.3762/bjnano.14.28

• the transcellular pathway. NanoEL is a mechanism completely independent of receptors and tumor physiology [12][18][19][21][23]. This effect has been observed for various types of NPs including Au [12][21][33][34], Ag [23], Si [20], TiO2 [18][19][23], and SiO2 [23]. Additionally, NanoEL is responsible

• induction depends on the density of NPs, where the effective density of Si NPs ranged from 1.57 to 1.72 g/cm3 [20]. The leakage rate increases with increasing nanoparticle density. They also showed that a force of approximately 1.8 nN/μm along the boundaries of VE-cad adherens junctions mediated by

• unheard of in a tumor-dependent EPR effect. The extracellular NP mechanism of action for NPs including Ag, Au, Si, TiO2, and SiO2 was also confirmed in other studies, which indicated that it is the most likely method of NanoEL induction. Endothelial leakiness induced by nanomaterials is a direct mechanism

Quasi-guided modes resulting from the band folding effect in a photonic crystal slab for enhanced interactions of matters with free-space radiations

• Kaili Sun,
• Yangjian Cai,
• Uriel Levy and
• Zhanghua Han

Beilstein J. Nanotechnol. 2023, 14, 322–328, doi:10.3762/bjnano.14.27

• ) The maximum electric field magnitude normalized to that of the incident wave across the central plane of the Si layer. (d) Typical distributions of Ex and Ey along the central plane of the silicon layer. Funding This work is supported by the National Science Foundation of China (11974221, 12274269).

Biocatalytic synthesis and ordered self-assembly of silica nanoparticles via a silica-binding peptide

• Mustafa Gungormus

Beilstein J. Nanotechnol. 2023, 14, 280–290, doi:10.3762/bjnano.14.25

• stabilizes the favorable orientation of histidine. Then a nucleophilic attack by serine on the Si–O bond of the precursor molecule results in a Ser–O–Si(OR)3 transitory complex. The hydrolysis is completed by the addition of water, separating the protein and the hydrolyzed precursor molecule, and the release

High–low Kelvin probe force spectroscopy for measuring the interface state density

• Ryo Izumi,
• Masato Miyazaki,
• Yan Jun Li and
• Yasuhiro Sugawara

Beilstein J. Nanotechnol. 2023, 14, 175–189, doi:10.3762/bjnano.14.18

• given by Similar results can be obtained for a p-type semiconductor. Next, we consider the charge Qit due to the interface states. In indirect-bandgap semiconductors such as Si with a low carrier density below 1017 cm−3, the charge (electron and hole) transfer between the interface and bulk states at

• density. For an n-type Si semiconductor at room temperature, the hole (minority carrier) lifetime τp as a function of electron (majority carrier) density n has been experimentally investigated and is reported to be less than 2.5 × 10−5 s for low carrier densities n < 5 × 1017 cm−3 [26]. Additionally, for

• metal-oxide semiconductor capacitors on Si(100) substrates, the lifetimes τn and τp as functions of the sum of the surface potential and the Fermi potential with respect to the midgap have been experimentally investigated [24]. As a result, for Si semiconductors with a low carrier density (small Fermi

Structural, optical, and bioimaging characterization of carbon quantum dots solvothermally synthesized from o-phenylenediamine

• Zoran M. Marković,
• Milica D. Budimir,
• Martin Danko,
• Dušan D. Milivojević,
• Pavel Kubat,
• Danica Z. Zmejkoski,
• Vladimir B. Pavlović,
• Marija M. Mojsin,
• Milena J. Stevanović and
• Biljana M. Todorović Marković

Beilstein J. Nanotechnol. 2023, 14, 165–174, doi:10.3762/bjnano.14.17

• AFM images was performed in Gwyddion software [51]. FTIR measurements were conducted using an infrared microscope Nicolet iN10 Thermofisher Scientific operated in the ATR mode. All samples were deposited on Si substrates by drop casting. Spectra were recorded at ambient temperature in the range of 400