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Search for "annealing" in Full Text gives 459 result(s) in Beilstein Journal of Nanotechnology. Showing first 200.

Electron-driven and thermal chemistry during water-assisted purification of platinum nanomaterials generated by electron beam induced deposition

  • Ziyan Warneke,
  • Markus Rohdenburg,
  • Jonas Warneke,
  • Janina Kopyra and
  • Petra Swiderek

Beilstein J. Nanotechnol. 2018, 9, 77–90, doi:10.3762/bjnano.9.10

Graphical Abstract
  • desorbed from the surface during dosing of H2O and during subsequent or simultaneous electron exposure. Also, the effect of annealing was investigated. In a first experiment (Figure 5), a 30 monolayer film of MeCpPtMe3 was partially degraded by electron irradiation until ESD of CH4 had decreased to about
  • annealing. This led to desorption of only small amounts of CH4 (Figure 5, between 400 and 600 s) as evident from a slight increase of the m/z 15 signal. This indicates that precursor fragments can be hydrolyzed to some extent but this reaction is much less efficient for removal of organic material than the
  • background signal and irradiation was performed only after dosing of H2O (Figure 6). In fact, Figure 6 shows a small and continuous increase of the MS signal at m/z 28 during dosing of H2O. When electron irradiation was started after leaking of H2O without prior annealing, the desorption rate of CO increased
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Published 08 Jan 2018

Response under low-energy electron irradiation of a thin film of a potential copper precursor for focused electron beam induced deposition (FEBID)

  • Leo Sala,
  • Iwona B. Szymańska,
  • Céline Dablemont,
  • Anne Lafosse and
  • Lionel Amiaud

Beilstein J. Nanotechnol. 2018, 9, 57–65, doi:10.3762/bjnano.9.8

Graphical Abstract
  • annealing in vacuum. In the second part, the fragmentation of the amine ligands under electron impact is discussed, as well as the fragmentation of the perfluorinated carboxylate ligands. The effective cross section for the fragmentation and release of these ligands under 1.5 eV electron impact is then
  • CH and NH stretching bands (350–400 meV). Only these last bands, especially the stretching NH contribution in the high-energy range, are visibly reduced on the dip-coated Si wafer, with nevertheless a significant remaining quantity. HREELS analysis of vacuum exposure and annealing effect The sample
  • ligands was done by heating. Spectrum g in Figure 2 was recorded under the same conditions as spectrum f, but after a mild annealing above room temperature (T = 305 K), desorption was induced, visible by a small pressure rise in the chamber during the process. Back to low temperature, spectrum g is
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Published 05 Jan 2018

Transition from silicene monolayer to thin Si films on Ag(111): comparison between experimental data and Monte Carlo simulation

  • Alberto Curcella,
  • Romain Bernard,
  • Yves Borensztein,
  • Silvia Pandolfi and
  • Geoffroy Prévot

Beilstein J. Nanotechnol. 2018, 9, 48–56, doi:10.3762/bjnano.9.7

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  • 0.6 keV followed by annealing at 850 K. Si was evaporated from a Si rod with a commercial Omicron EFM3 evaporator. For AES/LEED experiments, the evaporation rate was between 0.03 and 0.06 ML/min, whereas for STM experiments, it was around 0.004 ML/min. Auger peak-to-peak intensities were measured
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Published 05 Jan 2018

CdSe nanorod/TiO2 nanoparticle heterojunctions with enhanced solar- and visible-light photocatalytic activity

  • Fakher Laatar,
  • Hatem Moussa,
  • Halima Alem,
  • Lavinia Balan,
  • Emilien Girot,
  • Ghouti Medjahdi,
  • Hatem Ezzaouia and
  • Raphaël Schneider

Beilstein J. Nanotechnol. 2017, 8, 2741–2752, doi:10.3762/bjnano.8.273

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  • rue Jean Starcky, 68093 Mulhouse, France 10.3762/bjnano.8.273 Abstract CdSe nanorods (NRs) with an average length of ≈120 nm were prepared by a solvothermal process and associated to TiO2 nanoparticles (Aeroxide® P25) by annealing at 300 °C for 1 h. The content of CdSe NRs in CdSe/TiO2 composites was
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Published 19 Dec 2017

The role of ligands in coinage-metal nanoparticles for electronics

  • Ioannis Kanelidis and
  • Tobias Kraus

Beilstein J. Nanotechnol. 2017, 8, 2625–2639, doi:10.3762/bjnano.8.263

Graphical Abstract
  • period of six months. Its low boiling temperature and molecular weight reduced the amounts of carbonaceous residues after annealing and led to continuous conductive layers at low annealing temperature (175 °C) [103]. Other researchers replaced oleylamine with acetic acid (Figure 3) as described in [98
  • transformation temperatures (Tp) are desirable for applications on plastic films with low glass-transition temperatures (Tg) [33][44]. The required annealing temperature is correlated with the length of the capping agents as reported by Gupta and co-workers. Inks of thiol-functionalized gold nanoparticles having
  • , materials that combine conductivity at lower percolation thresholds and mechanical flexibility, improved conductivity was achieved by means of conventional thermal annealing [129] or plasma treatment [130]. Gold nanowires (AuNW) with core diameters below 2 nm were arranged into a mesh on PET substrates
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Published 07 Dec 2017

Laser-assisted fabrication of gold nanoparticle-composed structures embedded in borosilicate glass

  • Nikolay Nedyalkov,
  • Mihaela Koleva,
  • Nadya Stankova,
  • Rosen Nikov,
  • Mitsuhiro Terakawa,
  • Yasutaka Nakajima,
  • Lyubomir Aleksandrov and
  • Reni Iordanova

Beilstein J. Nanotechnol. 2017, 8, 2454–2463, doi:10.3762/bjnano.8.244

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  • -dimensional structures comprised of gold nanoparticles in glass. The sample material was gold-ion-doped borosilicate glass prepared by conventional melt quenching. The nanoparticle growth technique consisted of two steps – laser-induced defect formation and annealing. The first step was realized by
  • . At 355, 532 and 1064 nm, no coloration of the sample was observed. The femtosecond laser irradiation at 800 nm also induced defects, again observed as brown coloration. The absorbance spectra indicated that this coloration was related to the formation of oxygen deficiency defects. After annealing
  • ., silicate, phosphate and borate glasses, titanium and aluminum oxides, and polymers) are processed by laser radiation with appropriate parameters. Metal nanoparticles are formed within the irradiated area after a subsequent thermal annealing. This photoreduction process has been achieved by using CW lasers
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Published 21 Nov 2017

Fabrication of CeO2–MOx (M = Cu, Co, Ni) composite yolk–shell nanospheres with enhanced catalytic properties for CO oxidation

  • Ling Liu,
  • Jingjing Shi,
  • Hongxia Cao,
  • Ruiyu Wang and
  • Ziwu Liu

Beilstein J. Nanotechnol. 2017, 8, 2425–2437, doi:10.3762/bjnano.8.241

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  • synthesized by thermal decomposition of the as-prepared Ce–Zn precursor and exhibited excellent activity for removing CO [17]. CeO2–ZnO composite hollow microspheres were fabricated via annealing of a precursor of amorphous zinc–cerium citrate hollow microspheres and presented excellent catalytic activity in
  • balance between the opposite forces Fc and Fa is disturbed. When Fc > Fa at a high ΔT, the inner core contracts inward and detaches from the preformed outer shell (stage II). During further annealing, the inner core shrinks into a solid structure and consequently CeO2 yolk–shell spheres form (stage III
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Published 16 Nov 2017

Comparing postdeposition reactions of electrons and radicals with Pt nanostructures created by focused electron beam induced deposition

  • Julie A. Spencer,
  • Michael Barclay,
  • Miranda J. Gallagher,
  • Robert Winkler,
  • Ilyas Unlu,
  • Yung-Chien Wu,
  • Harald Plank,
  • Lisa McElwee-White and
  • D. Howard Fairbrother

Beilstein J. Nanotechnol. 2017, 8, 2410–2424, doi:10.3762/bjnano.8.240

Graphical Abstract
  • , spatially localized annealing (producing a temperature increase on the order of 300–400 K). Using this approach, Stanford et al. [24] reported that LAEBID augmented by reactive gases (O2) decreased the C content by 75% in nanostructures created from MeCpPtMe3. In related work, Lewis et al. [25] found that
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Published 15 Nov 2017

Robust procedure for creating and characterizing the atomic structure of scanning tunneling microscope tips

  • Sumit Tewari,
  • Koen M. Bastiaans,
  • Milan P. Allan and
  • Jan M. van Ruitenbeek

Beilstein J. Nanotechnol. 2017, 8, 2389–2395, doi:10.3762/bjnano.8.238

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  • to the second atomic layer. We demonstrate a controlled evolution of such tips starting from undefined tip shapes. Keywords: adatom imaging; mechanical annealing; scanning tunneling microscopy (STM); STM tip; tip apex; Introduction After the advent of the scanning tunneling microscope (STM) in 1981
  • controlled by the overlap of the electronic wave functions of tip and surface. Many techniques are available for preparing atomically clean sample surfaces, including repeated cycles of sputtering and annealing in the case of metals, by fresh cleavage in the case of suitable materials, and by high
  • -temperature annealing as for many semiconductors. However, a well defined tip structure at the atomic scale is still hard to achieve. Mechanical grinding [1], electro-polishing [11] or electrochemical etching [12][13] are standard ex situ methods for preparing microscopically sharp tips. The tip apex can be
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Published 13 Nov 2017

Increasing the stability of DNA nanostructure templates by atomic layer deposition of Al2O3 and its application in imprinting lithography

  • Hyojeong Kim,
  • Kristin Arbutina,
  • Anqin Xu and
  • Haitao Liu

Beilstein J. Nanotechnol. 2017, 8, 2363–2375, doi:10.3762/bjnano.8.236

Graphical Abstract
  • Al2O3 onto the nanostructures followed by thermal annealing [36]. In addition to the 2D pattern transfer processes, gold nanoparticles with specified 3D shapes were synthesized by growing seed particles in the internal cavities of 3D DNA nanostructures [37][38]. Compared to the above developments, there
  • 95 to 20 °C at a rate of 1 °C/min. After the annealing, excess staple strands were removed by purifying 140 μL of the DNA origami triangle solution using 500–600 μL of the TAE/Mg2+ buffer in a Microcon YM-100 100 kDa MW centrifuge filter (Millipore, Billerica, MA, USA) on a single-speed benchtop
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Published 09 Nov 2017

Changes of the absorption cross section of Si nanocrystals with temperature and distance

  • Michael Greben,
  • Petro Khoroshyy,
  • Sebastian Gutsch,
  • Daniel Hiller,
  • Margit Zacharias and
  • Jan Valenta

Beilstein J. Nanotechnol. 2017, 8, 2315–2323, doi:10.3762/bjnano.8.231

Graphical Abstract
  • capping layer, respectively. The samples were subsequently annealed in a quartz tube furnace at 1150 °C for 1 h in high-purity N2 in order to form Si NCs and then passivated by annealing in H2 at 500 °C for defect passivation. In addition to ML samples, one single layer (SL) sample with a thick SRON 200
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Published 06 Nov 2017

Au55, a stable glassy cluster: results of ab initio calculations

  • Dieter Vollath,
  • David Holec and
  • Franz Dieter Fischer

Beilstein J. Nanotechnol. 2017, 8, 2221–2229, doi:10.3762/bjnano.8.222

Graphical Abstract
  • ). In case of the crystalline starting configuration (Figure 1a), the initial coordination numbers (equivalent to the crystalline cluster being only relaxed at 0 K without the annealing procedure) and the coordination numbers after annealing at 900 K and subsequent relaxation at 0 K are displayed. For
  • . The most frequent coordination number is seven. However, after annealing at 900 K and relaxation at 0 K, the highest coordination number is reduced from twelve to ten, which is close to 10.9 exhibited by liquid gold [27]. The cluster did not crystallize again after quenching it to 0 K but instead it
  • relaxed crystalline cluster was annealed on a series of temperatures up to 1200 K, after which each nanocluster was analyzed for the coordination numbers and energies. Figure 4 displays the development of the maximum and the average coordination number as a function of the annealing temperature. These
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Published 25 Oct 2017

Ta2N3 nanocrystals grown in Al2O3 thin layers

  • Krešimir Salamon,
  • Maja Buljan,
  • Iva Šarić,
  • Mladen Petravić and
  • Sigrid Bernstorff

Beilstein J. Nanotechnol. 2017, 8, 2162–2170, doi:10.3762/bjnano.8.215

Graphical Abstract
  • nitride NPs at 600–800 °C, with a high degree of ordering along the surface normal and short-range ordering within the layers containing tantalum (metallic layers). At an even higher annealing temperature of 900 °C the NPs crystallize in the rare and relatively unexplored Ta2N3 phase. However, the
  • -assembly of semiconductor quantum dots in amorphous alumina or silica multilayers [18][19]. The key point of this deposition design is the insertion of dielectric layers, so called spacer layers, between all arbitrarily thick active metallic layers. In that way, upon annealing, the growth and final size of
  • by using the reactive magnetron sputtering deposition technique under conditions that implied a high nitrogen fraction in sputtering gas mixture and post-deposition annealing [23]. We found that the Ta2N3 phase has metallic properties, which makes it a possible candidate for the LSPR applications
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Published 16 Oct 2017

A systematic study of the controlled generation of crystalline iron oxide nanoparticles on graphene using a chemical etching process

  • Peter Krauß,
  • Jörg Engstler and
  • Jörg J. Schneider

Beilstein J. Nanotechnol. 2017, 8, 2017–2025, doi:10.3762/bjnano.8.202

Graphical Abstract
  • ][34]. As graphene is close to or even atomically thin, even very minor amounts of contamination can affect its electronic properties [22][33][34]. Additional processing such as thermal annealing in vacuum or hydrogen atmosphere is required to completely remove the protective layer, making polymer
  • the copper substrate. However, no significant variation in number, size or shape of the iron oxide nanoparticles can be observed for the different time periods of etching. Post-processing by annealing at elevated temperature in a hydrogen atmosphere reveals a high mobility of the iron oxide
  • were found to have diameters in the range of 9 ± 4 nm after this annealing procedure (Figure 5). To summarize, functionalization of CVD-derived graphene with iron oxide nanoparticles is possible using customized etchants and/or additional processing techniques. The number of iron oxide particles in
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Published 26 Sep 2017

Identifying the nature of surface chemical modification for directed self-assembly of block copolymers

  • Laura Evangelio,
  • Federico Gramazio,
  • Matteo Lorenzoni,
  • Michaela Gorgoi,
  • Francisco Miguel Espinosa,
  • Ricardo García,
  • Francesc Pérez-Murano and
  • Jordi Fraxedas

Beilstein J. Nanotechnol. 2017, 8, 1972–1981, doi:10.3762/bjnano.8.198

Graphical Abstract
  • BCP prepared on substrates modified with EBL and oxygen plasma and annealed using the two selected annealing processes described above: (Figure 2a) 230 °C in nitrogen atmosphere for 5 min and cooling in nitrogen and (Figure 2b) 260 °C in nitrogen atmosphere for 5 min and cooling in air. A scheme with
  • eV binding energies, which are assigned to the carbonyl (C–O, continuous green line) and carboxyl (O–C=O, continuous pink line) contributions, respectively. Thus, oxygen plasma activates the brush layer surface by creating a distribution of C–O bonding, while annealing and cooling in air induces
  • incompletely covered PS–OH substrate. Direct writing We discuss here the results obtained with resistless lithography methods, namely EBL [12] and PON [18]. Figure 6a shows a comparison between C 1s XPS spectra of three PS–OH brush layer treated surfaces after annealing at 230 °C and cooling in nitrogen
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Published 21 Sep 2017

Intercalation of Si between MoS2 layers

  • Rik van Bremen,
  • Qirong Yao,
  • Soumya Banerjee,
  • Deniz Cakir,
  • Nuri Oncel and
  • Harold J. W. Zandvliet

Beilstein J. Nanotechnol. 2017, 8, 1952–1960, doi:10.3762/bjnano.8.196

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  • silicon evaporator was calibrated by depositing a sub-monolayer amount of Si on a Ge(001) substrate. The Ge(001) surface was cleaned by applying several cycles of Ar ion sputtering and annealing. After deposition and mild annealing at a temperature of 450–500 K, the Ge(001) substrate was inserted into the
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Published 19 Sep 2017

Coexistence of strongly buckled germanene phases on Al(111)

  • Weimin Wang and
  • Roger I. G. Uhrberg

Beilstein J. Nanotechnol. 2017, 8, 1946–1951, doi:10.3762/bjnano.8.195

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  • metallic substrates and band gap materials. Bampoulis et al. [7] proposed a germanene layer with very small buckling (0.2 Å) when they made Pt/Ge crystals by depositing and annealing of Pt on Ge(110). In an inverse case, Li et al. [8] chose Pt(111) as a substrate onto which Ge was evaporated at room
  • prepared by repeated cycles of sputtering by Ar+ ions (1 keV) and annealing at approximately 400 °C until a sharp (1×1) LEED pattern was obtained. About 0.6 ML of Ge was deposited at different rates between 0.37 ML/min and 0.55 ML/min while the Al(111) substrate was kept around 200 °C. The reason for
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Published 18 Sep 2017

Carbon nano-onions as fluorescent on/off modulated nanoprobes for diagnostics

  • Stefania Lettieri,
  • Marta d’Amora,
  • Adalberto Camisasca,
  • Alberto Diaspro and
  • Silvia Giordani

Beilstein J. Nanotechnol. 2017, 8, 1878–1888, doi:10.3762/bjnano.8.188

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  • sensing applications [7], multishell fullerenes, known as carbon nano-onions (CNOs) [8][9], prepared by thermal annealing of detonation nanodiamonds (d-NDs) [10], are an attractive class of carbon nanomaterials (CNMs) for imaging, diagnostic and therapeutic applications, due to their unique properties
  • procedure [25][26]. The condensation with dimethylaminobenzaldehyde led to the NIR-BODIPY derivative 3. The surface functionalization of 5 nm pristine CNOs (p-CNOs), synthetized by thermal annealing of d-NDs, was obtained by an oxidation process using a 3 M solution of nitric acid under reflux condition
  • , 124.50, 117.67, 115.33, 113.93, 112.67, 19.84, 13.65. See Supporting Information File 1, Figure S4. HRMS-ESI m/z: [M+H]+ calcd for C39H41N4OBF2, 630.3341; found, 630.3363. p-CNOs The synthesis of small, pristine carbon nano-onions (p-CNOs) was performed by thermal annealing of detonation nanodiamonds (d
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Published 07 Sep 2017

Structural model of silicene-like nanoribbons on a Pb-reconstructed Si(111) surface

  • Agnieszka Stępniak-Dybala and
  • Mariusz Krawiec

Beilstein J. Nanotechnol. 2017, 8, 1836–1843, doi:10.3762/bjnano.8.185

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  • evaporation of Pb on the Si(111)-7 × 7 substrate. Next, the Si layer was deposited onto the sample held at 200 K within 20 min. Details of the preparation can be found in [47]. The presented nanoribbons were obtained by two-step annealing: first at room temperature for 1 h, and then by direct heating at
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Published 05 Sep 2017

Non-intuitive clustering of 9,10-phenanthrenequinone on Au(111)

  • Ryan D. Brown,
  • Rebecca C. Quardokus,
  • Natalie A. Wasio,
  • Jacob P. Petersen,
  • Angela M. Silski,
  • Steven A. Corcelli and
  • S. Alex Kandel

Beilstein J. Nanotechnol. 2017, 8, 1801–1807, doi:10.3762/bjnano.8.181

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  • argon sputtering followed by a 15 min annealing. The substrates were allowed to cool to room temperature prior to deposition. The samples were produced by preparing a 2 mg/mL solution of either 9,10-phenanthrenequinone or 9-fluorenone in tetrahydrofuran and injecting microliter droplets of this solution
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Published 30 Aug 2017

(Metallo)porphyrins for potential materials science applications

  • Lars Smykalla,
  • Carola Mende,
  • Michael Fronk,
  • Pablo F. Siles,
  • Michael Hietschold,
  • Georgeta Salvan,
  • Dietrich R. T. Zahn,
  • Oliver G. Schmidt,
  • Tobias Rüffer and
  • Heinrich Lang

Beilstein J. Nanotechnol. 2017, 8, 1786–1800, doi:10.3762/bjnano.8.180

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  • other by 120°, induced by the C3 surface symmetry of the Au(111) surface (Figure 7a,b). Upon annealing to around 150 °C highly ordered and large domains were observed, as shown in Figure 7c. O–H…O hydrogen bonds responsible for the formation of the well-ordered domains are shown exemplarily in Figure 8c
  • diffusion activity on Ag(110) as compared to Au(111). Annealing at around 150 °C increased the mobility of the adsorbed molecules and resulted in the formation of small islands composed of nine or twelve molecules of H2TPP(OH)4 (Figure 9a). Subsequent heating to around 200 °C had the molecules rearrange
  • ) surface. Sample annealing at only 130 °C reduced the number of intact CuTPP(Br)8 molecules on a Au(111) further, at 200 °C only surface-adsorbed Br atoms or Br2 molecules were observed and at 300 °C all bromine species desorbed (Figure 11, left column). STM measurements were carried out in order to
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Published 29 Aug 2017

Nanotribological behavior of deep cryogenically treated martensitic stainless steel

  • Germán Prieto,
  • Konstantinos D. Bakoglidis,
  • Walter R. Tuckart and
  • Esteban Broitman

Beilstein J. Nanotechnol. 2017, 8, 1760–1768, doi:10.3762/bjnano.8.177

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  • behavior and mechanical properties at the nano-scale of cryogenically and conventionally treated AISI 420 martensitic stainless steel were evaluated. Conventionally treated specimens were subjected to quenching and annealing, while the deep cryogenically treated samples were quenched, soaked in liquid
  • cryogenically treated (DCT). The austenization, quenching and annealing of the specimens was performed in argon atmosphere in order to prevent decarburation. The selection of the heat-treatment parameters was based in the results of our previous work [10]. Scanning electron microscopy (SEM) was used to
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Published 25 Aug 2017

Transport characteristics of a silicene nanoribbon on Ag(110)

  • Ryoichi Hiraoka,
  • Chun-Liang Lin,
  • Kotaro Nakamura,
  • Ryo Nagao,
  • Maki Kawai,
  • Ryuichi Arafune and
  • Noriaki Takagi

Beilstein J. Nanotechnol. 2017, 8, 1699–1704, doi:10.3762/bjnano.8.170

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  • temperature STM (P < 10−10 Torr, T = 6 K). A Ag(110) single crystal surface was cleaned by repeated Ar ion sputtering and annealing at around 800 K. The STM tip was made of an electrochemically etched W wire and postannealed in the UHV chamber. The SiNRs were synthesized on Ag(110) by depositing Si atoms from
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Published 16 Aug 2017

Process-specific mechanisms of vertically oriented graphene growth in plasmas

  • Subrata Ghosh,
  • Shyamal R. Polaki,
  • Niranjan Kumar,
  • Sankarakumar Amirthapandian,
  • Mohamed Kamruddin and
  • Kostya (Ken) Ostrikov

Beilstein J. Nanotechnol. 2017, 8, 1658–1670, doi:10.3762/bjnano.8.166

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  • substrate was subjected to annealing and subsequently cleaned by Ar plasma with 200 W power at the respective temperatures. CH4/Ar ratio, growth time and annealing conditions (before and after growth) were kept constant for this study. The work was classified into three cases, as shown in Table 1. The
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Published 10 Aug 2017

Uptake and intracellular accumulation of diamond nanoparticles – a metabolic and cytotoxic study

  • Antonín Brož,
  • Lucie Bačáková,
  • Pavla Štenclová,
  • Alexander Kromka and
  • Štěpán Potocký

Beilstein J. Nanotechnol. 2017, 8, 1649–1657, doi:10.3762/bjnano.8.165

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  • 5 nm, H-terminated), and the same detonation NDs further oxidized by annealing at 450 °C. The influence of the NDs on cell viability and cell count was measured by the mitochondrial metabolic activity test and by counting cells with stained nuclei. The interaction of NDs with cells was monitored by
  • influencing the bulk of the NDs (formation of vacancies, and N-V sites supported by high-temperature annealing in vacuum) [39]. This was confirmed by the fact that there was no obvious difference in the FTIR spectra between the MR-18 sample and the AR-40 sample. The zeta potential of MR-type NDs were negative
  • evaluating NR-5 and NA-5 samples (i.e., samples of detonation NDs as-received and treated by annealing, respectively). These detonation NDs in their as-received state have a positive zeta potential, which is characteristic for hydrogenated NDs. The XPS analysis indicated a mixture of hydrogen and oxygen
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Published 10 Aug 2017
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