Sputtering onto liquids: a critical review

• Anastasiya Sergievskaya,
• Adrien Chauvin and
• Stephanos Konstantinidis

Beilstein J. Nanotechnol. 2022, 13, 10–53, doi:10.3762/bjnano.13.2

Cantilever signature of tip detachment during contact resonance AFM

• Devin Kalafut,
• Ryan Wagner,
• Maria Jose Cadena,
• Anil Bajaj and
• Arvind Raman

Beilstein J. Nanotechnol. 2021, 12, 1286–1296, doi:10.3762/bjnano.12.96

• methods provide information on important mechanical and electrical properties across a wide variety of samples. CR-AFM, PFM, and ESM are built upon the fundamental assumption that as the cantilever is excited, the probe tip remains in contact with the sample. Signal-to-noise ratios in these measurements

Plasmon-enhanced photoluminescence from TiO₂ and TeO₂ thin films doped by Eu³⁺ for optoelectronic applications

• Marcin Łapiński,
• Jakub Czubek,
• Katarzyna Drozdowska,
• Anna Synak,
• Wojciech Sadowski and
• Barbara Kościelska

Beilstein J. Nanotechnol. 2021, 12, 1271–1278, doi:10.3762/bjnano.12.94

• film. However, a blueshift occurs here due to the electrical properties of aluminum oxide. Additionally, it can be seen, that the position of the minimum of transmission as function of the Al2O3 film thickness. This may be explained by the different permittivity of the layers [34][35][36]. Emission and

Two dynamic modes to streamline challenging atomic force microscopy measurements

• Alexei G. Temiryazev,
• Andrey V. Krayev and
• Marina P. Temiryazeva

Beilstein J. Nanotechnol. 2021, 12, 1226–1236, doi:10.3762/bjnano.12.90

• science The relative ease of use of AFM and a large number of operating modes allowed for the study of mechanical, magnetic, and electrical properties of various objects. At the same time, surface profile measurements remain both the main application of the method and the basis of two-pass technics of

Assessment of the optical and electrical properties of light-emitting diodes containing carbon-based nanostructures and plasmonic nanoparticles: a review

• Keshav Nagpal,
• Erwan Rauwel,
• Frédérique Ducroquet and
• Protima Rauwel

Beilstein J. Nanotechnol. 2021, 12, 1078–1092, doi:10.3762/bjnano.12.80

• (CNT), and graphene (GR) towards producing cost-effective and efficient LED. A second strategy consisting of enhancing the optical and electrical properties of LED via SPR of MNP is also surveyed. The LED covered in this review include inorganic LED, OLED, inorganic/organic LED, and HyLED. The

• -based ones. However, CNT and graphene tend to provide better thermal management and electrical properties; therefore, their integration into LED is of growing importance. Out of the three OLED-incorporating carbon-based nanostructures, OLED + GR possessed the lowest turn-on voltage; however, the

A Au/CuNiCoS₄/p-Si photodiode: electrical and morphological characterization

• Adem Koçyiğit,
• Adem Sarılmaz,
• Teoman Öztürk,
• Faruk Ozel and
• Murat Yıldırım

Beilstein J. Nanotechnol. 2021, 12, 984–994, doi:10.3762/bjnano.12.74

• have revealed that the bandgap value is suitable for optoelectronic devices. To the best of our knowledge, there is no study on the electrical properties of CuNiCoS4-based photodiodes. The usage of different materials as interfacial layers in metal–semiconductor devices is a hot research topic

• nanocrystals can be inserted between metal and semiconductor as interfacial layer to increase the effect of the illumination and to control electrical properties of the metal–semiconductor device. In this work, CuNiCoS4 nanocrystals were successfully obtained as interlayer of Schottky diodes. The electrical

• transition [8]. The bandgap was determined as 1.66 eV by extrapolating the linear portion of the band energy graph given in Figure 3b. Electrical properties In order to determine the electrical performance of the Au/CuNiCoS4/p-Si device, I–V measurements were performed on the photodiode in the dark and under

Impact of GaAs(100) surface preparation on EQE of AZO/Al₂O₃/p-GaAs photovoltaic structures

• Piotr Caban,
• Rafał Pietruszka,
• Jarosław Kaszewski,
• Monika Ożga,
• Bartłomiej S. Witkowski,
• Krzysztof Kopalko,
• Piotr Kuźmiuk,
• Katarzyna Gwóźdź,
• Ewa Płaczek-Popko,
• Krystyna Lawniczak-Jablonska and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 578–592, doi:10.3762/bjnano.12.48

• improves optical and electrical properties of gallium arsenide-based devices [31][32][33]. In this work we examine the influence of the surface treatment of GaAs (cleaning, etching, and passivation) on the external quantum efficiency (EQE) results of the AZO/Al2O3/p-GaAs PV structures (in which AZO stands

Boosting of photocatalytic hydrogen evolution via chlorine doping of polymeric carbon nitride

• Malgorzata Aleksandrzak,
• Michalina Kijaczko,
• Wojciech Kukulka,
• Daria Baranowska,
• Martyna Baca,
• Beata Zielinska and
• Ewa Mijowska

Beilstein J. Nanotechnol. 2021, 12, 473–484, doi:10.3762/bjnano.12.38

• with hydrogen evolution under simulated solar light. A series of microscopic and spectroscopic techniques have been used to characterize the morphology, chemical structure, optical, photophysical, and electrical properties of the obtained carbon nitrides. Results and Discussion The detailed analysis of

Exploring the fabrication and transfer mechanism of metallic nanostructures on carbon nanomembranes via focused electron beam induced processing

• Christian Preischl,
• Linh Hoang Le,
• Elif Bilgilisoy,
• Armin Gölzhäuser and
• Hubertus Marbach

Beilstein J. Nanotechnol. 2021, 12, 319–329, doi:10.3762/bjnano.12.26

• arbitrary substrates or grids to obtain free-standing 2D membranes [25]. The specific choice of the self-assembling molecules determines the thickness, porosity, stiffness, and the mechanical/electrical properties of the resulting CNM [26][27]. The SAMs that are used for the fabrication of CNMs consist of

TiO_x/Pt₃Ti(111) surface-directed formation of electronically responsive supramolecular assemblies of tungsten oxide clusters

• Marco Moors,
• Yun An,
• Agnieszka Kuc and
• Kirill Yu. Monakhov

Beilstein J. Nanotechnol. 2021, 12, 203–212, doi:10.3762/bjnano.12.16

• of electronic devices appealing for the implementation in conceptually new data storage cells [1]. Specifically, resistive memories [2] based on the change of the electrical properties of a transition metal oxide thin layer, integrated in a simple electrode setup as a function of an externally

Paper-based triboelectric nanogenerators and their applications: a review

• Jing Han,
• Nuo Xu,
• Yuchen Liang,
• Mei Ding,
• Junyi Zhai,
• Qijun Sun and
• Zhong Lin Wang

Beilstein J. Nanotechnol. 2021, 12, 151–171, doi:10.3762/bjnano.12.12

• gradual decay of the surface charges (Figure 3-iv). Treatment methods for paper and P-TENGs The electrical properties of paper are critical determinants of the performance of P-TENGs. The original paper structure usually does not meet all the requirements for the desired applications on P-TENG devices

• polydopamine to improve the output voltage of TENGs by approx. 3.5 times in comparison with unmodified TENGs. Another typical method to prepare nanoscale paper with different electrical properties is by using vacuum filtration (VF) to either obtain dielectric cellulose nanofiber (CNF)- based nanoscale paper or

A review on the green and sustainable synthesis of silver nanoparticles and one-dimensional silver nanostructures

• Sina Kaabipour and
• Shohreh Hemmati

Beilstein J. Nanotechnol. 2021, 12, 102–136, doi:10.3762/bjnano.12.9

• demonstrated unique electrical properties. AgNPs coated on polycarbonate substrates were previously used to increase the electrical conductivity of polycarbonate composites [79]. AgNPs have also demonstrated minimum or no adverse effects on mechanical strength when embedded in polymeric materials or composites

ZnO and MXenes as electrode materials for supercapacitor devices

• Ameen Uddin Ammar,
• Ipek Deniz Yildirim,
• Feray Bakan and
• Emre Erdem

Beilstein J. Nanotechnol. 2021, 12, 49–57, doi:10.3762/bjnano.12.4

• optical and electrical properties. This review will give a prospect to researchers working on the development of electrode materials for efficient supercapacitors. The discussion of MXenes along with ZnO, although different in chemistry, also highlights the differences in dimensionality when it comes to

• ) spectroscopy techniques among the most powerful techniques to extract detailed information on the defect structures of ZnO. Also, electrical impedance spectroscopy (EIS) and cyclic voltammetry (CV) are sensitive to electrical properties such as specific capacitance and impedance, which can be correlated with

• mode, which is indicative of a large amount of defect centers. The existence of defect centers affects the vibration mode and eventually causes a blueshift, as shown in Figure 1d. Finally, the electrical properties obtained via CV and EIS can also be correlated with the defect structures when the

Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy

• Rosine Coq Germanicus,
• Peter De Wolf,
• Florent Lallemand,
• Catherine Bunel,
• Serge Bardy,
• Hugues Murray and
• Ulrike Lüders

Beilstein J. Nanotechnol. 2020, 11, 1764–1775, doi:10.3762/bjnano.11.159

• microscopy (sMIM). sMIM allows for the characterization of the local electrical properties through the analysis of the microwave impedance of the metal–insulator–semiconductor nanocapacitor (nano-MIS capacitor) that is formed by tip and sample. A highly integrated monolithic silicon PIN diode with a 3D

• crucial to optimize and increase the device integration. In order to map the electrical properties of microelectronic materials with a high spatial resolution, scanning probe microscopy (SPM), based on atomic force microscopy (AFM), offers several modes based on the control of electrical conduction and on

• modes provide sub-10 nm two-dimensional maps of the electrical properties of doped semiconductor layers [1][6][7][8] when a fixed bias is applied to the nanoscale contact. In SSRM, a DC voltage is applied to the sample and the resulting current, flowing from the conductive tip through the sample to the

PEG/PEI-functionalized single-walled carbon nanotubes as delivery carriers for doxorubicin: synthesis, characterization, and in vitro evaluation

• Shuoye Yang,
• Zhenwei Wang,
• Yahong Ping,
• Yuying Miao,
• Yongmei Xiao,
• Lingbo Qu,
• Lu Zhang,
• Yuansen Hu and
• Jinshui Wang

Beilstein J. Nanotechnol. 2020, 11, 1728–1741, doi:10.3762/bjnano.11.155

• their unique properties, including large surface area, relatively low density, high stability and other inherent mechanical, optical and electrical properties [7][8][9]. CNTs can be produced as single-walled CNTs (SWCNTs) or multi-walled CNTs (MWCNTs) [10]. SWCNTs can be easily synthesized and

High-responsivity hybrid α-Ag₂S/Si photodetector prepared by pulsed laser ablation in liquid

• Raid A. Ismail,
• Hanan A. Rawdhan and
• Duha S. Ahmed

Beilstein J. Nanotechnol. 2020, 11, 1596–1607, doi:10.3762/bjnano.11.142

• –S bonds and the second-order longitudinal optical phonon 2LO mode; their intensity increased when CTAB was added to Tu. FTIR data revealed the presence of a Ag–S bond located at 510 cm−1. The electrical properties of the Ag2S/Si heterojunction were significantly enhanced after the addition of CTAB

Structural and electronic properties of SnO₂ doped with non-metal elements

• Jianyuan Yu,
• Yingeng Wang,
• Yan Huang,
• Xiuwen Wang,
• Jing Guo,
• Jingkai Yang and
• Hongli Zhao

Beilstein J. Nanotechnol. 2020, 11, 1321–1328, doi:10.3762/bjnano.11.116

• preferred orientation, optical properties, and electrical properties of SnO2 film are improved. Analysis of the electrical properties of SnO2 films doped with different non-metal elements showed that the resistance of SnO2 films doped with N was higher [6][7][8] than that of SnO2 doped with other elements

• successfully prepared from N-doped SnO2 films. Through Al/N co-doping, a p-type SnO2 semiconductor thin film with excellent electrical properties was prepared. The resistivity, hole concentration and hole mobility were 7.1 × 10−3 Ω·cm, 6.24 × 1019 cm−3 and 14.1 cm2·V−1·s−1, respectively [8]. Doping SnO2 with F

• performance of SnO2 is not yet clear. In recent years, many researchers used first-principles calculations to scrutinize the doping of SnO2 with non-metal elements such as F [11][12] and S [13]. The results show that the optical and electrical properties of SnO2 thin films can be changed by doping with

Magnetohydrodynamic stagnation point on a Casson nanofluid flow over a radially stretching sheet

• Ganji Narender,
• Kamatam Govardhan and
• Gobburu Sreedhar Sarma

Beilstein J. Nanotechnol. 2020, 11, 1303–1315, doi:10.3762/bjnano.11.114

• FORTRAN. Nanoparticles have unique thermal and electrical properties which can improve heat transfer in nanofluids. The effects of pertinent flow parameters on the nondimensional velocity, temperature and concentration profiles are presented. Overall, the results show that the heat transfer rate increases

An atomic force microscope integrated with a helium ion microscope for correlative nanoscale characterization

• Santiago H. Andany,
• Gregor Hlawacek,
• Stefan Hummel,
• Charlène Brillard,
• Mustafa Kangül and
• Georg E. Fantner

Beilstein J. Nanotechnol. 2020, 11, 1272–1279, doi:10.3762/bjnano.11.111

• [24] with very high resolution. Magnetic properties of nanostructures can be measured using magnetic force microscopy (MFM) [42], and a host of AFM techniques are available to measure electrical properties of samples (e.g., conductive AFM (cAFM) [43], scanning capacitance microscopy (SCM) [44], and

High permittivity, breakdown strength, and energy storage density of polythiophene-encapsulated BaTiO₃ nanoparticles

• Adnanullah Khan,
• Amir Habib and
• Adeel Afzal

Beilstein J. Nanotechnol. 2020, 11, 1190–1197, doi:10.3762/bjnano.11.103

• microscopy (JEOL JSM 6490LA SEM) and atomic force microscopy (JSPM-5200 scanning probe microscope). Electrical properties of the bulk materials are measured under ambient conditions with a Wayne Kerr 6505B precision impedance analyzer and a Hipotronics HD103 3kV DC Hipot Tester. Results and Discussion

• electrical properties with high permittivity (ε′ = 25.2), very low loss tangent (tan δ = 0.04) and dielectric loss (ε″ = 0.93), and 41% reduced ac conductivity compared to the as-prepared BTO nanoparticles. Figure 7 shows the breakdown strength (Eb) measured at the room temperature and the calculated energy

• density and electrical breakdown strength (b) of the different dielectric materials. A comparison of the electrical properties of core–shell BTO-PTh nanoparticles with other BTO-polymer composite dielectric materials reported in literature.

A new photodetector structure based on graphene nanomeshes: an ab initio study

• Babak Sakkaki,
• Hassan Rasooli Saghai,
• Ghafar Darvish and
• Mehdi Khatir

Beilstein J. Nanotechnol. 2020, 11, 1036–1044, doi:10.3762/bjnano.11.88

• among experimental and theoretical researchers. Electrical properties such as a charge mobility in the range of 105 cm2·V−1·s−1, a minimum conductivity at the Dirac point of 4e2/πh (at low temperature), and remarkable optical properties such as linear dispersion of the Dirac electrons make broadband

• of GNRs with precise width are challenges concerning these materials. In addition to the electrical properties of GNRs, the use of these materials for the manufacturing of optical detectors has been extensively investigated. Another graphene semiconductor material are graphene nanomeshes (GNMs). The

• calculated the dark current and photocurrent in these devices. The results show that GNM-based devices exhibit better optical and electrical properties compared to intrinsic graphene and GNR devices. In terms of transport, GNMs can carry more current than GNRs. In terms of optical properties, they also have

Gas-sensing features of nanostructured tellurium thin films

• Dumitru Tsiulyanu

Beilstein J. Nanotechnol. 2020, 11, 1010–1018, doi:10.3762/bjnano.11.85

• development of thin films in chemical-sensing applications, especially for toxic gas sensing. Szaro [4] pioneered the studies regarding the effects of oxygen and nitrogen, diluted in either dry or wet air, on the electrical properties of Te films. The results showed an increase in the hole concentration

• during the adsorption process but not in the mobility of these holes. However, the changes in the electrical properties induced by these gases were very small and irreversible and were, later on, confirmed and explained in a systematic, relevant work [5]. In the early 2000s, Tsiulyanu and coworkers [6

Measurement of electrostatic tip–sample interactions by time-domain Kelvin probe force microscopy

• Christian Ritz,
• Tino Wagner and
• Andreas Stemmer

Beilstein J. Nanotechnol. 2020, 11, 911–921, doi:10.3762/bjnano.11.76

• active nanoelectronic devices. Kelvin probe force microscopy (KFM) is a technique used to quantitatively characterize such electrical properties [1][2][3]. It is applied to map material compositions via changes in the work function, to localize charge distributions in dielectric samples [4][5], and to

Structural optical and electrical properties of a transparent conductive ITO/Al–Ag/ITO multilayer contact

• Aliyu Kabiru Isiyaku,
• Ahmad Hadi Ali and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2020, 11, 695–702, doi:10.3762/bjnano.11.57

• for transparent conductive oxide (TCO) films due to its good optical and electrical properties. Improving the optoelectronic properties of ITO films with reduced thickness is crucial and quite challenging. ITO-based multilayer films with an aluminium–silver (Al–Ag) interlayer (ITO/Al–Ag/ITO) and a

• pure ITO layer (as reference) were prepared by RF and DC sputtering. The microstructural, optical and electrical properties of the ITO/Al–Ag/ITO (IAAI) films were investigated before and after annealing at 400 °C. X-ray diffraction measurements show that the insertion of the Al–Ag intermediate bilayer

• excellent optical and electrical properties [4][5]. It is a wide-bandgap material (3.6–4.0 eV) with low electrical resistivity. ITO contains the rare and expensive metal indium, which is reflected in the market value of the material [6]. Hence, a reduction of the ITO consumption is desirable. ITO films with

Current measurements in the intermittent-contact mode of atomic force microscopy using the Fourier method: a feasibility analysis

• Berkin Uluutku and
• Santiago D. Solares

Beilstein J. Nanotechnol. 2020, 11, 453–465, doi:10.3762/bjnano.11.37

• ; intermittent contact; Fourier analysis; tapping-mode AFM; Introduction Conductive atomic force microscopy (C-AFM), a contact-mode technique, has been extensively utilized to investigate local electrical properties of nanoscale systems, such as organic solar cells [1][2][3][4][5][6][7], semiconductors [8][9

• the use of alternating current to drive the cantilever, which would also lead to antenna effects. The electrical properties of the sample may play an important role in the feasibility of the proposed method. For example, in this introductory theoretical work we have treated the conductive properties