Implementation of data-cube pump–probe KPFM on organic solar cells

• Benjamin Grévin,
• Olivier Bardagot and
• Renaud Demadrille

Beilstein J. Nanotechnol. 2020, 11, 323–337, doi:10.3762/bjnano.11.24

• approximation, this effect can be understood by assuming that there are no permanent charges in the “dark” (i.e., unilluminated) state of the organic layer considered as an undoped semiconductor. In “real” samples trapped carriers and electrostatic dipoles at the donor–acceptor interfaces contribute to the

Using gold nanoparticles to detect single-nucleotide polymorphisms: toward liquid biopsy

• María Sanromán Iglesias and
• Marek Grzelczak

Beilstein J. Nanotechnol. 2020, 11, 263–284, doi:10.3762/bjnano.11.20

• the use of emergent nanomaterials. Over the last decade, a number of novel and optically active nanomaterials involving semiconductor or metal nanocrystals enabled the development of sensing devices with rather simple transduction mechanisms [3]. For example, the aggregation-induced color change of a

• times larger than their physical diameters) [59], and the lack of photobleaching (unlike organic fluorescent dyes and semiconductor nanocrystals) are additional parameters making plasmonic nanocrystals attractive materials for biosensing. Importantly, the position of the plasmon band and its bandwidth

• the distance between metallic and semiconductor components by a DNA machine (Figure 11). Their system consisted of a CdS film, a composite of AuNPs (5 nm) and hairpin DNA, a primer, and polymerase and NEase. In the presence of AuNPs–hairpin DNA, the luminescence of CdS was quenched (Figure 11A). The

Nonequilibrium Kondo effect in a graphene-coupled quantum dot in the presence of a magnetic field

• Levente Máthé and
• Ioan Grosu

Beilstein J. Nanotechnol. 2020, 11, 225–239, doi:10.3762/bjnano.11.17

• , we measure all quantities in units of the energy cutoff D. We assume D ≈ 7 eV, which is an acceptable value for graphene samples [40][56][57][58]. We consider a lateral QD formed by lithographically-realized metallic gate electrodes placed near the QD, similar to a QD created in a semiconductor

Size effects of graphene nanoplatelets on the properties of high-density polyethylene nanocomposites: morphological, thermal, electrical, and mechanical characterization

• Tuba Evgin,
• Alpaslan Turgut,
• Georges Hamaoui,
• Zdenko Spitalsky,
• Nicolas Horny,
• Matej Micusik,
• Mihai Chirtoc,
• Mehmet Sarikanat and
• Maria Omastova

Beilstein J. Nanotechnol. 2020, 11, 167–179, doi:10.3762/bjnano.11.14

• ], irradiated [46], metal–semiconductor couples [42][47], etc.) can be thermally characterized to determine thermophysical properties, such as the thermal diffusivity and thermal effusivity. At lower frequencies, the measurements are subject to 3D effects and necessitate a change in the laser beam shape. At low

Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

• Botond Sánta,
• Dániel Molnár,
• Patrick Haiber,
• Agnes Gubicza,
• Edit Szilágyi,
• Zsolt Zolnai,
• András Halbritter and
• Miklós Csontos

Beilstein J. Nanotechnol. 2020, 11, 92–100, doi:10.3762/bjnano.11.9

• ; nanosecond operation; resistive switching; silver iodide (AgI); Introduction The half a century long increase of the computational capacity of von Neumann architectures built on ever-shrinking complementary metal-oxide semiconductor (CMOS)-based hardware units is facing its technological, economical and

Simple synthesis of nanosheets of rGO and nitrogenated rGO

• Pallellappa Chithaiah,
• Madhan Mohan Raju,
• Giridhar U. Kulkarni and
• C. N. R. Rao

Beilstein J. Nanotechnol. 2020, 11, 68–75, doi:10.3762/bjnano.11.7

• ) are chemically modified forms of graphene, which are extensively studied in the field of science and engineering. Reduced graphene oxide has attracted significant interest due to its similarities to pristine graphene. It behaves like a semimetal or a semiconductor and is therefore used in a variety of

Influence of the epitaxial composition on N-face GaN KOH etch kinetics determined by ICP-OES

• Markus Tautz,
• Maren T. Kuchenbrod,
• Joachim Hertkorn,
• Robert Weinberger,
• Martin Welzel,
• Arno Pfitzner and
• David Díaz Díaz

Beilstein J. Nanotechnol. 2020, 11, 41–50, doi:10.3762/bjnano.11.4

• ) has become the basis of modern energy-efficient lighting technology over the last 30 years [1]. Especially the binary III–V semiconductor gallium nitride (GaN) is very useful for consumer lighting application. The high band gap energy of 3.4 eV at room temperature permits the production of blue and

Synthesis and acetone sensing properties of ZnFe₂O₄/rGO gas sensors

• Kaidi Wu,
• Yifan Luo,
• Ying Li and
• Chao Zhang

Beilstein J. Nanotechnol. 2019, 10, 2516–2526, doi:10.3762/bjnano.10.242

• similar to the results of several previously reported works [45][46][47]. Acetone sensing mechanism The most accepted explanation of the acetone sensing mechanism of ZnFe2O4, which is an n-type semiconductor, is described as a reaction at the gas–solid interface. When the ZnFe2O4 gas sensor is placed in

• Fermi energy levels equalize when two semiconducting systems are in contact via the transfer of carriers. Consequently, heterojunctions and regions of electron depletion will be formed at the interface between rGO, which is a p-type semiconductor, and ZnFe2O4, an n-type semiconductor. In addition, there

Formation of metal/semiconductor Cu–Si composite nanostructures

• Natalya V. Yumozhapova,
• Andrey V. Nomoev,
• Vyacheslav V. Syzrantsev and
• Erzhena C. Khartaeva

Beilstein J. Nanotechnol. 2019, 10, 2497–2504, doi:10.3762/bjnano.10.240

• improvement of the thermal stability of the core and, under the condition of a hermetic coating, reliably protects its surface from redox reactions [3]. Janus-like metal/semiconductor nanoparticles are promising as effective radio-absorbing media and are the basis for creating the elemental basis for

• approach to modelling the formation of metal/semiconductor core–shell nanoparticles was described in [18]. There, a core–shell particle was obtained by spraying the outer shell on an already formed core. The molecular dynamics calculation of such a procedure showed the possibility of the formation of Cu–Si

• liquid alloy and 2) core–shell and Janus-like nanoparticles made of liquid silicon and copper droplets. We have presented new data on the formation of metal/semiconductor nanoclusters, such as the transition of particles from a core–shell structure to a Janus-like structure starting from the liquid state

Mobility of charge carriers in self-assembled monolayers

• Zhihua Fu,
• Tatjana Ladnorg,
• Hartmut Gliemann,
• Alexander Welle,
• Asif Bashir,
• Michael Rohwerder,
• Qiang Zhang,
• Björn Schüpbach,
• Andreas Terfort and
• Christof Wöll

Beilstein J. Nanotechnol. 2019, 10, 2449–2458, doi:10.3762/bjnano.10.235

• the determination of mobilities in macroscopic samples. Keywords: conducting atomic force microscopy; lateral charge transport; nanografting; organic semiconductor; self-assembled monolayer; Introduction Charge transport in organic semiconductors plays a central role in the field of molecular

• the conductivity of the SAM simultaneously. In course of this project, the relationship between island size and conductivity could be fully confirmed, and the lateral charge transport and carrier mobility of the semiconductor molecules were determined from the dependence of conductivity on the island

• size. In the present study, we used PAT protected with a thioester group to fabricate OSC-based SAMs. Anthracene is one of the best-studied organic semiconductor molecules, and numerous studies on charge-transport within single-crystals made from this compound have been reported [31]. A high mobility

Coating of upconversion nanoparticles with silica nanoshells of 5–250 nm thickness

• Cynthia Kembuan,
• Maysoon Saleh,
• Bastian Rühle,
• Ute Resch-Genger and
• Christina Graf

Beilstein J. Nanotechnol. 2019, 10, 2410–2421, doi:10.3762/bjnano.10.231

• the UCL emission spectra. This stepwise shell growth can most likely be also utilized for the coating of other NPs with similar hydrophobic surface chemistries of the initial particles such as iron oxide NPs or semiconductor NPs. Further applications can include the covalent attachment of biomolecules

Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars

• Stefania Castelletto,
• Abdul Salam Al Atem,
• Faraz Ahmed Inam,
• Hans Jürgen von Bardeleben,
• Sophie Hameau,
• Ahmed Fahad Almutairi,
• Gérard Guillot,
• Shin-ichiro Sato,
• Alberto Boretti and
• Jean Marie Bluet

Beilstein J. Nanotechnol. 2019, 10, 2383–2395, doi:10.3762/bjnano.10.229

• platform for the integration of these quantum systems in large-scale complementary metal-oxide semiconductor (CMOS)-compatible wafers. Also, SiC is suitable for nanofabrication [18][19], and can be controlled through its electronic and piezoelectric properties. Further, it has great potentials for

Nontoxic pyrite iron sulfide nanocrystals as second electron acceptor in PTB7:PC₇₁BM-based organic photovoltaic cells

• Olivia Amargós-Reyes,
• José-Luis Maldonado,
• Omar Martínez-Alvarez,
• María-Elena Nicho,
• José Santos-Cruz,
• Juan Nicasio-Collazo,
• Irving Caballero-Quintana and
• Concepción Arenas-Arrocena

Beilstein J. Nanotechnol. 2019, 10, 2238–2250, doi:10.3762/bjnano.10.216

• -dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (see Figure 1a and the Experimental section). Figure 1b shows the chemical structure of PTB7 and PC71BM. We observe an improvement of the OPV performance by 21% using this nontoxic and low-cost iron pyrite (0.5 wt %) semiconductor material. The

Nitrogen-vacancy centers in diamond for nanoscale magnetic resonance imaging applications

• Alberto Boretti,
• Lorenzo Rosa,
• Jonathan Blackledge and
• Stefania Castelletto

Beilstein J. Nanotechnol. 2019, 10, 2128–2151, doi:10.3762/bjnano.10.207

Microbubbles decorated with dendronized magnetic nanoparticles for biomedical imaging: effective stabilization via fluorous interactions

• Da Shi,
• Justine Wallyn,
• Dinh-Vu Nguyen,
• Francis Perton,
• Delphine Felder-Flesch,
• Sylvie Bégin-Colin,
• Mounir Maaloum and
• Marie Pierre Krafft

Beilstein J. Nanotechnol. 2019, 10, 2103–2115, doi:10.3762/bjnano.10.205

• silicon wafer and immediately spun for 1 min at 3000 rpm (Spin150 from SPS, Semiconductor Production Systems Europe). The spin-coated samples were placed under vacuum in a desiccator for 15‒20 h to fully evaporate the solvents. The silicon wafers were stored at 4 °C until the AFM measurements. AFM images

The importance of design in nanoarchitectonics: multifractality in MACE silicon nanowires

• Stefania Carapezzi and
• Anna Cavallini

Beilstein J. Nanotechnol. 2019, 10, 2094–2102, doi:10.3762/bjnano.10.204

• . Especially semiconductor NWs offer the unique promise to boost the performance of semiconductor devices by quantum effects. In this respect, silicon NWs [4][5][6][7] are key elements in the field of nanotechnology, given that they can be integrated in the microelectronic industry, which is mainly Si-based

• anisotropic wet etching technique where the sculpting of the nanostructures is catalyzed by a discontinuous thin film of noble metal deposited on a substrate. The metal works as a local cathode where the reduction of oxidants occurs. The underneath semiconductor is the local anode where a charge-mediated

Improvement of the thermoelectric properties of a MoO₃ monolayer through oxygen vacancies

• Wenwen Zheng,
• Wei Cao,
• Ziyu Wang,
• Huixiong Deng,
• Jing Shi and
• Rui Xiong

Beilstein J. Nanotechnol. 2019, 10, 2031–2038, doi:10.3762/bjnano.10.199

• the Γ point, while the maximum of the first valence band (VBM) appears at the S point. The indirect bandgap of the MoO3 monolayer is computed as 1.79 eV for PBE and 2.85 eV for HSE06, which is consistent with previous studies [17][31]. Since the MoO3 monolayer is a wide-gap semiconductor, it is likely

Review of advanced sensor devices employing nanoarchitectonics concepts

• Katsuhiko Ariga,
• Tatsuyuki Makita,
• Masato Ito,
• Taizo Mori,
• Shun Watanabe and
• Jun Takeya

Beilstein J. Nanotechnol. 2019, 10, 2014–2030, doi:10.3762/bjnano.10.198

• poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) as an organic semiconductor co-crystallized with an alkyl derivative of bisphenol A as a hapten [102] (Figure 6). Upon binding of the anti-bisphenol A antibody, the output current of the transistor first decreased. The addition of bisphenol

• semiconductor CCD-type pH imaging sensor [143]. Although the sensitivity of the prepared sensor is inferior to that of other fluorescence sensors, this sensor nanoarchitectonics approach does not require any labelling procedures. Therefore, it may be useful for the estimation of ATP discharge in damaged cells

• . Ultrathin film nanoarchitectures are crucial not only for the facile contact between analytes and the sensor device but also with respect to the carrier mobility for semiconductor-based sensor devices. The enhancement of sensor performance on ultrathin films has been recognized in several recent research

Gold-coated plant virus as computed tomography imaging contrast agent

• Alaa A. A. Aljabali,
• Mazhar S. Al Zoubi,
• Khalid M. Al-Batanyeh,
• Ali Al-Radaideh,
• Mohammad A. Obeid,
• Abeer Al Sharabi,
• Walhan Alshaer,
• Bayan AbuFares,
• Tasnim Al-Zanati,
• Murtaza M. Tambuwala,
• Naveed Akbar and
• David J. Evans

Beilstein J. Nanotechnol. 2019, 10, 1983–1993, doi:10.3762/bjnano.10.195

• as molecular imaging tools [8]. In general, NPs carry high contrast agent payloads in comparison to smaller moieties [9]. Semiconductor quantum dots (QDs) are nanosized crystals, a photostable fluorophore with a broad excitation spectrum but narrow emission at wavelengths dependent on the size and

First principles modeling of pure black phosphorus devices under pressure

• Ximing Rong,
• Zhizhou Yu,
• Zewen Wu,
• Junjun Li,
• Bin Wang and
• Yin Wang

Beilstein J. Nanotechnol. 2019, 10, 1943–1951, doi:10.3762/bjnano.10.190

• orthorhombic semiconductor to a simple cubic metal with increasing pressure by performing in situ ADXRD and Raman spectroscopy with the assistance of a DAC apparatus. They also carried out first principles calculations to interpret the metallic behavior of BP under pressure. Pablo et al. investigated the

• substance of pressure-related quantum transport in pure BP devices in this paper is not changed. When RC = 15%, monolayer BP becomes an indirect bandgap semiconductor. When RC = 30%, the conduction band minimum (CBM) descends below the valence band maximum (VBM), and the monolayer BP finally becomes a

• increasing RC. When RC reaches ca. 5%, the monolayer BP changes from a direct bandgap semiconductor to an indirect bandgap semiconductor. With further increase of RC, the bandgap decreases continuously, and the monolayer BP eventually becomes a conductor when RC is 25–30%. The fully relaxed BP and partially

Prestress-loading effect on the current–voltage characteristics of a piezoelectric p–n junction together with the corresponding mechanical tuning laws

• Wanli Yang,
• Shuaiqi Fan,
• Yuxing Liang and
• Yuantai Hu

Beilstein J. Nanotechnol. 2019, 10, 1833–1843, doi:10.3762/bjnano.10.178

• ; piezoelectric property; p–n junction; Introduction With the new area of piezotronics proposed by Wang [1][2], researches on the fundamental characteristics of piezoelectric semiconductor structures and devices have been increasing. It should be emphasized that the most commonly utilized semiconductors at

• ][7][8][9][10][11][12][13], MOSFETs [1][14], and acoustic charge transport devices [15][16][17]. For piezoelectric semiconductor devices, analyses on the static, time-harmonic and transient behaviors seem particularly important regarding their applications and development [18]. Zhang et al. [19

• ] studied the static extensional behavior of a piezoelectric semiconductor nanofiber. Liang et al. [20] analyzed the fundamental characteristics of a cantilevered ZnO nanowire exposed to a transient end force. Recently, Fan et al. [21] and Zhang et al. [22] revisited the bending behavior of a cantilevered

Remarkable electronic and optical anisotropy of layered 1T’-WTe₂ 2D materials

• Qiankun Zhang,
• Rongjie Zhang,
• Jiancui Chen,
• Wanfu Shen,
• Chunhua An,
• Xiaodong Hu,
• Mingli Dong,
• Jing Liu and
• Lianqing Zhu

Beilstein J. Nanotechnol. 2019, 10, 1745–1753, doi:10.3762/bjnano.10.170

• . Electrical characterization All of the electrical characterization experiments were performed using a Keysight B1500A semiconductor device analyzer and a probe station with micromanipulation probes. Topological phase and characterization of 1T’-WTe2. a) Side and top views of lattice structures of 1T’-WTe2

Giant magnetoresistance ratio in a current-perpendicular-to-plane spin valve based on an inverse Heusler alloy Ti₂NiAl

• Yu Feng,
• Zhou Cui,
• Bo Wu,
• Jianwei Li,
• Hongkuan Yuan and
• Hong Chen

Beilstein J. Nanotechnol. 2019, 10, 1658–1665, doi:10.3762/bjnano.10.161

• [21]. Spin gapless semiconductor characteristics are also demonstrated in Mn2CoAl [22][23][24][25] and Ti2MnAl [26][27]. The interface characteristics of heterostructures based on inverse Heusler alloys have been studied in detail [28][29][30]. Therefore, inverse Heusler compounds exhibit exceptional

Kelvin probe force microscopy work function characterization of transition metal oxide crystals under ongoing reduction and oxidation

• Dominik Wrana,
• Karol Cieślik,
• Wojciech Belza,
• Christian Rodenbücher,
• Krzysztof Szot and
• Franciszek Krok

Beilstein J. Nanotechnol. 2019, 10, 1596–1607, doi:10.3762/bjnano.10.155

• ]). Strontium titanate, SrTiO3, is a perfect example of a semiconductor with a wide bandgap of 3.2 eV and also a model perovskite oxide. Ti4+ cations provide no electrons for the d-band, which can participate in conductivity. Strontium titanate finds many applications as a dielectric ceramic material [15] but

High-temperature resistive gas sensors based on ZnO/SiC nanocomposites

• Vadim B. Platonov,
• Marina N. Rumyantseva,
• Alexander S. Frolov,
• Alexey D. Yapryntsev and
• Alexander M. Gaskov

Beilstein J. Nanotechnol. 2019, 10, 1537–1547, doi:10.3762/bjnano.10.151

• high temperatures in the range of 300–800 °C. The development of high-temperature gas sensors requires the creation of new materials that are stable under these conditions. The stability of nanostructured semiconductor oxides at high temperature can be enhanced by creating composites with highly

• dispersed silicon carbide (SiC). In this work, ZnO and SiC nanofibers were synthesized by electrospinning of polymer solutions followed by heat treatment, which is necessary for polymer removal and crystallization of semiconductor materials. ZnO/SiC nanocomposites (15–45 mol % SiC) were obtained by mixing

• monitoring the complete combustion of fuel and controlling medium-temperature chemical and metallurgical processes [3][4][5]. The development of high-temperature gas sensors requires the creation of new materials that are stable at 300–600 °C, high humidity, and lack of oxygen. Nanostructured semiconductor