The impact of molecular tumor profiling on the design strategies for targeting myeloid leukemia and EGFR/CD44-positive solid tumors

• Nikola Geskovski,
• Nadica Matevska-Geshkovska,
• Simona Dimchevska Sazdovska,
• Marija Glavas Dodov,
• Kristina Mladenovska and
• Katerina Goracinova

Beilstein J. Nanotechnol. 2021, 12, 375–401, doi:10.3762/bjnano.12.31

• developed E-selectin-targeted porous silicon particles with capabilities for selective uptake to the BM [35]. The authors formulated a multistage carrier composed of porous silica microparticles that encapsulate nanoscale paclitaxel-loaded liposomes. The porous silica particles were decorated with E

• without ligands, in a healthy murine model. Even though the authors reported an organ distribution of nearly 20% per gram in the BM, most of the porous silicon particles were entrapped in the spleen, liver, and lungs, because of their size and surface characteristics. In this case, the physicochemical

Structural and optical characteristics determined by the sputtering deposition conditions of oxide thin films

• Petronela Prepelita,
• Florin Garoi and
• Valentin Craciun

Beilstein J. Nanotechnol. 2021, 12, 354–365, doi:10.3762/bjnano.12.29

• Petronela Prepelita Florin Garoi Valentin Craciun National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Street, PO Box MG-36, Magurele 077125, Ilfov, Romania 10.3762/bjnano.12.29 Abstract The influence of film thickness on the structural and optical properties of silicon

• nm thick sample), while the amount of Si K decreases. The atomic concentration of silicon decreases very slightly from 51.62% to 34.11%. The EDS analysis of the surface of the SiO2 oxide films illustrates an increase in the amount of oxygen as the film thickness increases. In addition, the mass

• concentration of silicon decreases from 64.64% to 49.50%, accompanied by an increase in the oxide content from 35.36% to 50.50%. The same target was used, with a standard chemical composition and good stoichiometry. The deposited thin films have a chemical composition with values close to this target

Exploring the fabrication and transfer mechanism of metallic nanostructures on carbon nanomembranes via focused electron beam induced processing

• Christian Preischl,
• Linh Hoang Le,
• Elif Bilgilisoy,
• Armin Gölzhäuser and
• Hubertus Marbach

Beilstein J. Nanotechnol. 2021, 12, 319–329, doi:10.3762/bjnano.12.26

• suitable combination of substrate and precursor is a prerequisite, that is, the substrate must be chemically altered by the electron beam and the precursor molecule must be susceptible to the altered site. Substrates that are known to fulfill the prerequisite are silicon oxide [10][12], rutile TiO2(110

The patterning toolbox FIB-o-mat: Exploiting the full potential of focused helium ions for nanofabrication

• Victor Deinhart,
• Lisa-Marie Kern,
• Jan N. Kirchhof,
• Sabrina Juergensen,
• Joris Sturm,
• Enno Krauss,
• Thorsten Feichtner,
• Sviatoslav Kovalchuk,
• Michael Schneider,
• Dieter Engel,
• Bastian Pfau,
• Bert Hecht,
• Kirill I. Bolotin,
• Stephanie Reich and
• Katja Höflich

Beilstein J. Nanotechnol. 2021, 12, 304–318, doi:10.3762/bjnano.12.25

• depth of 30 keV He ions in silicon is more than five times larger than the penetration depth of Ga ions of the same energy [21]. The consequently large collision cascade may create a significant amount of heat. Even for small ion doses deformation of the manufactured structures can be observed when

• ]. The fabrication of the samples starts by depositing the magnetic multilayer onto 150 nm thick silicon nitride membranes via magnetron sputtering. The membranes are almost transparent for soft X-rays, which are later employed for imaging of the samples. Subsequently, the multilayer film is locally

Gold(I) N-heterocyclic carbene precursors for focused electron beam-induced deposition

• Cristiano Glessi,
• Aya Mahgoub,
• Cornelis W. Hagen and
• Mats Tilset

Beilstein J. Nanotechnol. 2021, 12, 257–269, doi:10.3762/bjnano.12.21

• comparison with the 1H NMR spectrum of the bulk material (see Supporting Information File 1). Deposition setup All deposition experiments were performed in a Thermo Fisher Scientific Nova Nanolab 600 dual-beam SEM. The base chamber pressure was about 1 × 10−6 mbar. Silicon substrates were used for all

• experiments. The silicon substrates were cleaned by ultrasonication in acetone for 15 min, followed by ultrasonication in isopropanol for 15 min and blow drying with N2, and were kept in a dust free environment. For each precursor a different substrate was used to avoid cross contamination. The substrate was

• from the bottom of an aluminium plate (9.5 × 9.5 × 1 mm3). The plate lies directly on the 10 × 10 mm2 silicon substrate, covering some precursor crystals positioned on the substrate, and is kept in place with vacuum-compatible Kapton tape. Only small quantities are needed to test a precursor, and a

Scanning transmission helium ion microscopy on carbon nanomembranes

• Daniel Emmrich,
• Annalena Wolff,
• Nikolaus Meyerbröker,
• Jörg K. N. Lindner,
• André Beyer and
• Armin Gölzhäuser

Beilstein J. Nanotechnol. 2021, 12, 222–231, doi:10.3762/bjnano.12.18

• [18], Hall measured the thickness of a silicon nitride membrane down to 5 nm using the bright-field signal [19]. A different detection method is the use of a microchannel plate (MCP). Woehl et al. were able to resolve the core–shell structure of silica-coated gold nanoparticles with an annular

• detector in the dark field [20]. Kavanagh et al. used a silicon diode array as a pixelated sensor for transmission imaging to observe ion beam scattering with a static beam and as an end-point detection for pore milling into graphite sheets [21]. This work presents the design and capabilities of a dark

Mapping the local dielectric constant of a biological nanostructured system

• Wescley Walison Valeriano,
• Rodrigo Ribeiro Andrade,
• Juan Pablo Vasco,
• Angelo Malachias,
• Bernardo Ruegger Almeida Neves,
• Paulo Sergio Soares Guimarães and
• Wagner Nunes Rodrigues

Beilstein J. Nanotechnol. 2021, 12, 139–150, doi:10.3762/bjnano.12.11

• , resulting in an orientation of the wing fragment perpendicular to the cutting plane. Sections 40 nm thick of the apex wedge were cut using a diamond knife and placed on 10 mm × 10 mm Au/Cr (60 nm/20 nm)-coated silicon wafer pieces. A conductive substrate surface is necessary for the proposed εr

• defined disks of Al2O3 films with a radius of 5 µm deposited by ALD on Au/Cr (60 nm/20 nm)-coated silicon wafer pieces. The topographic image of an Al2O3 disk measured with AFM is shown in Figure 9a. The sample thickness was (21.0 ± 0.2) nm, relative to the gold surface. In the EFM mode, the microscope

Bulk chemical composition contrast from attractive forces in AFM force spectroscopy

• Dorothee Silbernagl,
• Media Ghasem Zadeh Khorasani,
• Natalia Cano Murillo,
• Anna Maria Elert and
• Heinz Sturm

Beilstein J. Nanotechnol. 2021, 12, 58–71, doi:10.3762/bjnano.12.5

• ) covering the spectral range from 900 cm−1 to 1900 cm−1. An Au-coated silicon probe (tip D) was employed. The force curves were analyzed by SOFA [45] and the deconvolution of histograms was done by using Omnic (ThermoFisher Scientific) and fityk software [46]. The following epoxy system was used as the

Atomic layer deposited films of Al₂O₃ on fluorine-doped tin oxide electrodes: stability and barrier properties

• Hana Krýsová,
• Michael Neumann-Spallart,
• Hana Tarábková,
• Pavel Janda,
• Ladislav Kavan and
• Josef Krýsa

Beilstein J. Nanotechnol. 2021, 12, 24–34, doi:10.3762/bjnano.12.2

• alumina coatings was ascribed to its capability of passivating semiconductor/electrolyte interfaces, thus reducing photogenerated charge-carrier recombination (e.g., on BiVO4 [16]). In this work, Al2O3 films were deposited via ALD on thermally grown SiO2 on silicon or on fluorine-doped tin oxide (FTO

• , and water and dried in a stream of argon. Si(100) wafers with a 300 nm thick thermal oxide layer (Silicon Quest International, USA) were treated successively with acetone/ethanol/water. Al2O3 films were grown by using an ALD system R200 (Picosun, Finland) in the thermal mode with varying numbers of

• precursor was 0.1 s with a purge time of 5 s and the pulse of H2O was 0.1 s with a purge time of 10 s. TMA and water were maintained at 22 °C. Nitrogen (99.999%, Linde) was used as a carrier gas. The deposition of aluminium oxide films on silicon or FTO was carried out by performing 30, 60, 120, and 200

Free and partially encapsulated manganese ferrite nanoparticles in multiwall carbon nanotubes

• Saja Al-Khabouri,
• Salim Al-Harthi,
• Toru Maekawa,
• Mohamed E. Elzain,
• Ashraf Al-Hinai,
• Ahmed D. Al-Rawas,
• Abbsher M. Gismelseed,
• Ali A. Yousif and
• Myo Tay Zar Myint

Beilstein J. Nanotechnol. 2020, 11, 1891–1904, doi:10.3762/bjnano.11.170

• , and Mössbauer characterization The X-ray diffraction patterns were acquired using Cu Kα radiation (λ = 1.5404 Å) at a Philips PW1820 diffractometer. The instrument was calibrated using a silicon disc. Free manganese ferrite nanoparticles were characterized using high-resolution transmission electron

Towards 3D self-assembled rolled multiwall carbon nanotube structures by spontaneous peel off

• Jonathan Quinson

Beilstein J. Nanotechnol. 2020, 11, 1865–1872, doi:10.3762/bjnano.11.168

• carpets [22], less conventional and complex structures were also developed and their formation mechanism is proposed in this study. In a typical AACVD synthesis, MWCNTs grow perpendicular to the substrates (i.e., quartz reactor walls or silicon wafers [23]). Under the conditions of the present study, it

• first observed by the naked eye. Based on a morphological characterization from a previous work [16], four distinct sections are identified along the MWCNT forest. From top to bottom (bottom is marked by the silicon substrate at the bottom of the image), one can see a “wavy”, a “straight”, another “wavy

• prepared by following a general approach detailed recently [16]. MWCNTs were synthesized at 800 °C with argon (Ar, 99.999%, BOC) as the carrier flow using an AACVD setup [12][23]. Briefly, MWCNTs were grown on silicon wafer substrates (10 × 20 mm2, Sibert, UK) by using an aerosol CVD setup consisting of a

Scanning transmission imaging in the helium ion microscope using a microchannel plate with a delay line detector

• Eduardo Serralta,
• Nico Klingner,
• Olivier De Castro,
• Michael Mousley,
• Santhana Eswara,
• Serge Duarte Pinto,
• Tom Wirtz and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2020, 11, 1854–1864, doi:10.3762/bjnano.11.167

• also detect channeling-related contrast on polycrystalline silicon, thallium chloride nanocrystals, and single-crystalline silicon by comparing the signal transmitted at different directions for the same data set. Keywords: bright-field; channeling; dark-field; delay line detector; helium ion

• adjust the acceptance angle interval when performed in DF. Most recently, a position-sensitive detector consisting of a silicon diode array has also been adopted for use in the HIM [31]. Later the same group also studied channeling effects on single-crystalline silicon with this detector [32]. In this

• transmission-channeling contrast using polycrystalline silicon, thallium chloride samples and beam steering in single-crystalline silicon. Experimental The new STIM detector comprises a stack of two MCPs and a resistive anode layer with a delay line readout structure behind it, as represented in Figure 1c. The

Nanocasting synthesis of BiFeO₃ nanoparticles with enhanced visible-light photocatalytic activity

• Thomas Cadenbach,
• Maria J. Benitez,
• A. Lucia Morales,
• Cesar Costa Vera,
• Luis Lascano,
• Francisco Quiroz,
• Alexis Debut and
• Karla Vizuete

Beilstein J. Nanotechnol. 2020, 11, 1822–1833, doi:10.3762/bjnano.11.164

• transformed by a Kubelka–Munk model in order to obtain the bandgap energy value [43]. The absorption spectrum of RhB was measured using a UV–vis spectrophotometer GENESYS 30TM with tungsten-halogen light source and silicon photodiode detector. The spectra were fitted with the Thermo Scientific VISIONlite PC

Nanomechanics of few-layer materials: do individual layers slide upon folding?

• Ronaldo J. C. Batista,
• Rafael F. Dias,
• Ana P. M. Barboza,
• Alan B. de Oliveira,
• Taise M. Manhabosco,
• Thiago R. Gomes-Silva,
• Matheus J. S. Matos,
• Andreij C. Gadelha,
• Cassiano Rabelo,
• Luiz G. L. Cançado,
• Ado Jorio,
• Hélio Chacham and
• Bernardo R. A. Neves

Beilstein J. Nanotechnol. 2020, 11, 1801–1808, doi:10.3762/bjnano.11.162

• obtained interlayer adhesion energy for graphene (0.25 N/m) and talc (0.62 N/m) is in good agreement with recent experimental results and theoretical predictions. The obtained value for the adhesion energy of graphene on a silicon substrate is also in agreement with previous results. Keywords: analytical

• exfoliated onto a silicon oxide substrate (blue shades). During the exfoliation/deposition processes, such a talc flake folds over itself, creating a well-defined folded edge, shown in orange shades. Figure 1b shows a schematic drawing of the morphology of the fold in Figure 1a. This is the morphology of the

• ] and 0.98 N/m [39]). Also, the obtained value of αp = 0.42 N/m indicates that the interaction between talc and the silicon probe is smaller than the interaction between talc layers. To combine the data of several force-curve measurements in a single graph, we plotted the rescaled force as a function

Electron beam-induced deposition of platinum from Pt(CO)₂Cl₂ and Pt(CO)₂Br₂

• Aya Mahgoub,
• Hang Lu,
• Rachel M. Thorman,
• Konstantin Preradovic,
• Titel Jurca,
• Lisa McElwee-White,
• Howard Fairbrother and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2020, 11, 1789–1800, doi:10.3762/bjnano.11.161

• exceeding the maximum pressure allowed in the SEM chamber (approximately 10−4 mbar). A silicon substrate was used for all deposition experiments, patterned such that circular areas of pristine silicon are surrounded by black silicon (obtained by reactive ion etching). The black silicon area aids in focusing

• directional doser, which was used to increase the partial pressure of the precursor at the surface of the substrate (silicon in the case of Pt(CO)2Br2, Ru-capped Si/Mo multilayers in the case of Pt(CO)2Cl2). Deposits were produced over 12 h under steady-state deposition conditions using a 3 kV electron beam

• -made EDX unit. While deposit thickness was not measured, UHV-deposited samples were thick enough to yield a minimal silicon substrate signal during EDX measurements. Results and Discussion Thermal properties of the precursor Thermogravimetric analysis was used to make a preliminary assessment of the

Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy

• Rosine Coq Germanicus,
• Peter De Wolf,
• Florent Lallemand,
• Catherine Bunel,
• Serge Bardy,
• Hugues Murray and
• Ulrike Lüders

Beilstein J. Nanotechnol. 2020, 11, 1764–1775, doi:10.3762/bjnano.11.159

• microscopy (sMIM). sMIM allows for the characterization of the local electrical properties through the analysis of the microwave impedance of the metal–insulator–semiconductor nanocapacitor (nano-MIS capacitor) that is formed by tip and sample. A highly integrated monolithic silicon PIN diode with a 3D

• the back-contact resistance [11], is experimentally determined. Therefore, at a fixed applied bias, the SSRM measurements map the variation in concentration of mobile majority carriers in doped semiconductors. A high load on the tip is required to obtain the spreading resistance. In fact, for silicon

• , a body-centred tetragonal configuration (β-Sn, also called Si-II) must be formed from the initial cubic diamond silicon (Si-I) in the highly stressed region just below the tip [12]. Furthermore, in air and under ambient conditions, due to the interaction between the tip and the surface, the probe

Imaging and milling resolution of light ion beams from helium ion microscopy and FIBs driven by liquid metal alloy ion sources

• Nico Klingner,
• Gregor Hlawacek,
• Paul Mazarov,
• Wolfgang Pilz,
• Fabian Meyer and
• Lothar Bischoff

Beilstein J. Nanotechnol. 2020, 11, 1742–1749, doi:10.3762/bjnano.11.156

• gallium. Light ions in the range of m = 1–28 u (hydrogen to silicon) are of increasing interest due to the available high beam resolution in the nanometer range and their special chemical and physical behavior in the substrate. In this work, helium and neon ion beams from a helium ion microscope are

• compared with ion beams such as lithium, beryllium, boron, and silicon, obtained from a mass-separated FIB using a liquid metal alloy ion source (LMAIS) with respect to the imaging and milling resolution, as well as the current stability. Simulations were carried out to investigate whether the

• ]. In particular, light elements in the mass range of m = 1–28 u (hydrogen to silicon) and energies between a few and 80 kiloelectronvolts are of special interest. The combination of this energy range with the particular mass range allows one to reach single-digit nanometer and even sub-nanometer

Application of contact-resonance AFM methods to polymer samples

• Sebastian Friedrich and
• Brunero Cappella

Beilstein J. Nanotechnol. 2020, 11, 1714–1727, doi:10.3762/bjnano.11.154

• interactions. Such models allow one to calculate the contact stiffness from the measured CR frequency. Then, from the contact stiffness, the elastic modulus of the sample can be determined. This technique has been successfully applied on rather stiff materials such as silicon [11] or chalcogenide glasses [12

• determined on compliant polymer samples are often very different from those on stiff samples, such as glass or silicon. This is probably due to the use of very simple models: (1) The cantilever is modelled as an elastically isotropic beam of uniform cross section and the tip mass is neglected [8][26]. (2

• ([3], pages 74–75). Yet, CR measurements with a silicon colloidal probe (radius R = 1.5 µm) performed on glass and bulk PS and PMMA yielded results that could not be analyzed quantitively, neither with our approximation (Equation 16), nor with the “exact” model (Equation 1). In particular, even with a

Seebeck coefficient of silicon nanowire forests doped by thermal diffusion

• Shaimaa Elyamny,
• Elisabetta Dimaggio and
• Giovanni Pennelli

Beilstein J. Nanotechnol. 2020, 11, 1707–1713, doi:10.3762/bjnano.11.153

• Technological Applications (SRTA-City), New Borg El-Arab City, 21934, Alexandria, Egypt 10.3762/bjnano.11.153 Abstract Thermoelectric generators made by large arrays of nanowires perpendicular to a silicon substrate, that is, so-called silicon nanowire forests are fabricated on large areas by an inexpensive

• doping parameters. These results are in good agreement with numerical simulations of the doping process applied to silicon nanowires. These devices, based on doped nanowire forests, offer a possible route for the exploitation of the high power factor of silicon, which, combined with the very low thermal

• sustainable. Silicon has a very high power factor S2σ [1][2][3][4] (S is the Seebeck coefficient and σ is the electrical conductivity). This, combined with the reduced thermal conductivity when nanostructured [5][6][7][8][9][10], makes it very suitable for thermoelectric applications. As added value, silicon

Functional nanostructures for electronics, spintronics and sensors

• Anatolie S. Sidorenko

Beilstein J. Nanotechnol. 2020, 11, 1704–1706, doi:10.3762/bjnano.11.152

• constraining the integration density, the multicore era effectively ends, leading to the “dark silicon” problem, i.e., only parts of available cores can be run simultaneously”. Energy efficiency has now become a crucial parameter, limiting the advancement of supercomputers. The powerful, modern supercomputer

Out-of-plane surface patterning by subsurface processing of polymer substrates with focused ion beams

• Serguei Chiriaev,
• Luciana Tavares,
• Vadzim Adashkevich,
• Arkadiusz J. Goszczak and
• Horst-Günter Rubahn

Beilstein J. Nanotechnol. 2020, 11, 1693–1703, doi:10.3762/bjnano.11.151

• mineral-organic polymer (its structure includes both carbon and silicon atoms). It is an elastomer and its elasticity can be tuned within a very broad range by changing the degree and the type of polymerization and by post-curing treatments [19][20]. The high and easily tunable elasticity, combined with

• depicted by the energy loss profiles simulated with the “Stopping and Range of Ions in Matter (SRIM)” software, as shown in Figure S1 (Supporting Information File 1). In the case of He+ ion irradiation, a significant fraction of the total ion energy is lost in the silicon substrate below the PMMA layer

• strain accumulation followed by the relaxation of this strain at a certain critical value. Experimental Materials and samples The PMMA and PDMS substrates used in this study were deposited onto the surface of blank silicon wafers. The deposition of PMMA was performed by spin coating in an RRT Lanz EBS 11

Amorphized length and variability in phase-change memory line cells

• Nafisa Noor,
• Sadid Muneer,
• Raihan Sayeed Khan,
• Anna Gorbenko and
• Helena Silva

Beilstein J. Nanotechnol. 2020, 11, 1644–1654, doi:10.3762/bjnano.11.147

• -switching process and not to the permanent and detrimental electrical breakdown failure that occurs in any dielectric material. Experimental The patterned GST-225 line cells used for this study were deposited on silicon dioxide (SiO2), had bottom metal contact pads (tungsten with Ti/TiN liner), and were

• capped by silicon nitride [24]. All cells were approx. 130 nm in width, WGST, approx. 470 nm in length between the metal contacts, LGST, and approx. 50 nm in thickness, tGST (SEM image in inset of Figure 2a). The as-fabricated cells were annealed in a Janis ST-500-UHT probe station at a pressure of

PTCDA adsorption on CaF₂ thin films

• Philipp Rahe

Beilstein J. Nanotechnol. 2020, 11, 1615–1622, doi:10.3762/bjnano.11.144

• material (cleanliness 99.9%, Alfa Aesar, Kandel, Germany) was deposited from an e-beam evaporator (type EFM3T, Focus GmbH, Huenstetten, Germany) on silicon samples held at about 600 °C by direct-current heating. Further details on the sample preparation and CaF2/Si(111) surface properties can be found in

• (111)-(7 × 7), molecules bind in various geometries to the pristine silicon surface as apparent from Figure 1a. Among these geometries, a distinguished adsorption position on top of the (7 × 7) corner hole stands out. Two examples are marked by white ellipses in Figure 1a. The growth of ordered CaF2

• films on Si(111) requires the formation of a CaF1 interface layer as the first step. This interface layer is generated by an interface reaction between CaF2 and the silicon surface [28][29], where surface temperatures around 600 °C during deposition facilitate the dissociation of CaF2 to CaF1 and F. The

Oxidation of Au/Ag films by oxygen plasma: phase separation and generation of nanoporosity

• Abdel-Aziz El Mel,
• Said A. Mansour,
• Mujaheed Pasha,
• Atef Zekri,
• Janarthanan Ponraj,
• Akshath Shetty and
• Yousef Haik

Beilstein J. Nanotechnol. 2020, 11, 1608–1614, doi:10.3762/bjnano.11.143

• % of silver and gold, respectively, as determined by EDS. The deposition time was 15 min, the deposition pressure was fixed at 10 mTorr and the distance between the substrate and the targets was ≈10 cm. All deposition processes were carried out on single crystal silicon wafers at a 30 rpm rotation

High-responsivity hybrid α-Ag₂S/Si photodetector prepared by pulsed laser ablation in liquid

• Raid A. Ismail,
• Hanan A. Rawdhan and
• Duha S. Ahmed

Beilstein J. Nanotechnol. 2020, 11, 1596–1607, doi:10.3762/bjnano.11.142

• Optics, Germany). An Ag2S/Si photodetector was prepared by depositing a Ag2S layer on the front side of a silicon substrate through a mask by drop-casting. A single-crystal p-type silicon (111) substrate with an electrical resistivity of 3–5 Ω·cm and a thickness of 300 μm was used. As shown in Figure 2

• , a SiO2 thin film was grown on the silicon substrate before Ag2S deposition through rapid thermal oxidation (RTO) at a temperature of 950 °C for 25 s, and then HF etchant was used to open a Si window on SiO2. The experimental details regarding the RTO process are presented elsewhere [20]. To

• investigate the optoelectronic properties of the Ag2S/Si photodetector, ohmic contacts were made by thermally evaporating In and Al films on the nanostructured Ag2S film and the back side of the silicon substrate, respectively, as shown in Figure 2. The sensitive area of the planar photodetector was 1.5 cm2