Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2018, 9, 2573–2580, doi:10.3762/bjnano.9.239

• bulk traps because of the identical a-IGZO/GI interfaces. Figure 2a–d shows the variation in the transfer characteristics of a-IGZO TFTs with various TIGZO under monochromatic light irradiation at the excitation wavelengths of 400, 430, 460, 490, and 530 nm. The transfer characteristics measured in the

• channel layer is totally depleted under the negative VGS bias since the TIGZO is less than the Debye length. Therefore, the photoexcited electrons and holes will be respectively accumulated and trapped at the IGZO/etch-stopper and the GI/IGZO interfaces. Meanwhile, the defect states are generated, which

• TIGZO is increased to 45 nm, which is close to the Debye length, the whole channel layer is almost depleted under the negative VGS bias. During the NBIS duration, more electrons and holes are excited and trapped at the back-channel and the front-channel interfaces. Simultaneously, the high-density

High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb)_1−x(MnSb)_x alloy

• Leonid N. Oveshnikov,
• Elena I. Nekhaeva,
• Alexey V. Kochura,
• Alexander B. Davydov,
• Mikhail A. Shakhov,
• Sergey F. Marenkin,
• Oleg A. Novodvorskii,
• Alexander P. Kuzmenko,
• Alexander L. Vasiliev,
• Boris A. Aronzon and
• Erkki Lahderanta

Beilstein J. Nanotechnol. 2018, 9, 2457–2465, doi:10.3762/bjnano.9.230

• interaction is affected by the appearance of Schottky barriers at the MnSb/GaSb boundaries. Basically, these type of barriers appear on the semiconductor/metal interfaces providing a tunneling charge transfer across the boundary, if the barrier is high enough. In the present case, Schottky barriers may appear

Evidence of friction reduction in laterally graded materials

• Roberto Guarino,
• Gianluca Costagliola,
• Federico Bosia and
• Nicola Maria Pugno

Beilstein J. Nanotechnol. 2018, 9, 2443–2456, doi:10.3762/bjnano.9.229

• Roberto Guarino Gianluca Costagliola Federico Bosia Nicola Maria Pugno Laboratory of Bio-Inspired & Graphene Nanomechanics, Department of Civil, Environmental and Mechanical Engineering, University of Trento, Via Mesiano 77, 38123 Trento, Italy Department of Physics and Nanostructured Interfaces

• compared to those derived by explicit finite-element simulations. This provides useful insights to understand the frictional properties of graded materials, with the aim of designing smart tribo-materials and innovative solutions for sliding interfaces. Methods Introduction In this work, we investigate the

• nature, or in the local frictional properties, e.g., by controlling the roughness or the microstructure, for the design of advanced sliding interfaces. A reduction in the static friction up to almost 30%, with respect to the corresponding non-graded material, can thus be achieved. Schematic of the

Pinning of a ferroelectric Bloch wall at a paraelectric layer

• Vilgelmina Stepkova and
• Jiří Hlinka

Beilstein J. Nanotechnol. 2018, 9, 2356–2360, doi:10.3762/bjnano.9.220

• phenomena as the parent ferroelectric materials. For example, in the case of BaTiO3–SrTiO3 superlattices with only a few atomic layers of SrTiO3, the domain walls are simply expected to penetrate through BaTiO3/SrTiO3 interfaces [1][2][3][4][5]. In general, it can be expected that a small amount of

Performance analysis of rigorous coupled-wave analysis and its integration in a coupled modeling approach for optical simulation of complete heterojunction silicon solar cells

• Ziga Lokar,
• Benjamin Lipovsek,
• Marko Topic and
• Janez Krc

Beilstein J. Nanotechnol. 2018, 9, 2315–2329, doi:10.3762/bjnano.9.216

• . Besides the optical properties, proper passivation techniques of textured interfaces are crucial to keep surface recombination velocities as low as possible and thus to maintain the good electrical properties of the device [8][9]. To design and optimize textures applied to the front and/or rear side of

• lateral dependence of E and H, while eigenvalues describe their vertical dependence. Finally, boundary conditions at the interfaces of sublayers are defined considering that tangential components of E and H need to be conserved for conservation of momentum. When solving the system, an S-matrix algorithm

• can change from TE to TM or vice versa. This is unlike in (locally) flat interfaces considered with ray optics or TMM, where local TE and TM polarization persist after reflection or refraction. This difference in 3D wave simulations is caused by the diffracted waves, which may not propagate in the

Metal–dielectric hybrid nanoantennas for efficient frequency conversion at the anapole mode

• Valerio F. Gili,
• Lavinia Ghirardini,
• Davide Rocco,
• Giuseppe Marino,
• Ivan Favero,
• Iännis Roland,
• Giovanni Pellegrini,
• Lamberto Duò,
• Marco Finazzi,
• Luca Carletti,
• Andrea Locatelli,
• Aristide Lemaître,
• Dragomir Neshev,
• Costantino De Angelis,
• Giuseppe Leo and
• Michele Celebrano

Beilstein J. Nanotechnol. 2018, 9, 2306–2314, doi:10.3762/bjnano.9.215

• properties of molecules at liquid–liquid interfaces [7]. The ability to downscale nonlinear optical processes, such as SHG, in extremely confined spatial regions opens many fascinating opportunities in light manipulation and multiplexing [8] as well as in optical sensing and spectroscopy [9][10]. Yet, to

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO₂/Si₃N₄-coating

• Dirk König,
• Daniel Hiller,
• Noël Wilck,
• Birger Berghoff,
• Merlin Müller,
• Sangeeta Thakur,
• Giovanni Di Santo,
• Luca Petaccia,
• Joachim Mayer,
• Sean Smith and
• Joachim Knoch

Beilstein J. Nanotechnol. 2018, 9, 2255–2264, doi:10.3762/bjnano.9.210

• the electrostatic integrity of the devices causes conventional doping to fail. Metal–Si contacts formed by, e.g., silicide formation [36] result in rather high Schottky-barriers at the source/drain-channel interfaces that deteriorate the switching behaviour and on-state performance. h-DFT calculations

• ) in particular at the gate-channel/gate-underlap interface and at the Ni–contact–Si interfaces, both depending on lcon (see Supporting Information File 1). Without the energy shift caused by Si3N4-coatings in source/drain, we obtain substantially higher Schottky-barriers for device II, resulting in

Lead-free hybrid perovskites for photovoltaics

• Oleksandr Stroyuk

Beilstein J. Nanotechnol. 2018, 9, 2209–2235, doi:10.3762/bjnano.9.207

• transport through the HP/ETL and HP/HTL interfaces by tailoring the HP morphology on the nanometer scale. It was also found that the size-selected Cs2SnI6 NCs (12–49 nm) are characterized by a much smaller effective electron mass (0.12m0) as compared to the bulk HP (0.56m0) [130]. Therefore, one might

Influence of the thickness of an antiferromagnetic IrMn layer on the static and dynamic magnetization of weakly coupled CoFeB/IrMn/CoFeB trilayers

• Deepika Jhajhria,
• Dinesh K. Pandya and
• Sujeet Chaudhary

Beilstein J. Nanotechnol. 2018, 9, 2198–2208, doi:10.3762/bjnano.9.206

• displacing the resonance field Hr [26][27][28][29]. Spin transport and relaxation studies in FM/AF/FM trilayers are intriguing due to the presence of two interfaces shared between FM and AF. Also, little is known about how effective magnetic damping evolves when there is a weak interlayer exchange coupling

• . For all the samples, distinct Kiessig fringes appeared over a wide range of the incidence angle (ca. 4°). This indicates the presence of sharp interfaces and excellent sample quality. The summary of the fitting results is presented in Table 1. The interfacial width between top CoFeB and underlying

Interaction-induced zero-energy pinning and quantum dot formation in Majorana nanowires

• Samuel D. Escribano,
• Alfredo Levy Yeyati and
• Elsa Prada

Beilstein J. Nanotechnol. 2018, 9, 2171–2180, doi:10.3762/bjnano.9.203

• , such as InAs or InSb, are becoming ideal systems for the artificial generation of topological superconductivity [1][2][3]. In addition to its fundamental interest, such nanowires that may host Majorana bound states (MBSs) at their ends or interfaces [4][5] constitute promising platforms for Majorana

• interfaces. Then, assuming that the charge density in the nanowire is located along its symmetry axis (x-axis), we obtain the electrostatic potential using the method of image charges, as explained in detail in Section 1 of Supporting Information File 1. More precisely, is given by where Vb(x,x′) is a

• interfaces have on average the same sign as the free charges. We consider in Section 4 of Supporting Information File 1 the generality of our results as a function of the dielectric constant of the SC and the location of the charge density within the nanowire section. Below, in Figure 4c we show that, when

Electrospun one-dimensional nanostructures: a new horizon for gas sensing materials

• Muhammad Imran,
• Nunzio Motta and
• Mahnaz Shafiei

Beilstein J. Nanotechnol. 2018, 9, 2128–2170, doi:10.3762/bjnano.9.202

• oxide catalysts and have been evaluated for toluene sensing [1]. WO3 NFs are functionalized by Pd-loaded ZnO nanocubes that result in multi-heterojunction Pd–ZnO and ZnO–WO3 interfaces. The as-spun Pd@ZnO-WO3 NFs have average diameter in the range 500–950 nm that reduces to 400–850 nm after calcination

Light–Matter interactions on the nanoscale

• Mohsen Rahmani and
• Chennupati Jagadish

Beilstein J. Nanotechnol. 2018, 9, 2125–2127, doi:10.3762/bjnano.9.201

• benefit from negligible resistive losses. This advantage allows excitation at large light intensities for significant concentration of light at the nanoscale, which is not limited to interfaces. Such nanostructures have multipolar characteristics of both electric and magnetic resonant modes that could aid

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

• Noel Kennedy,
• Ray Duffy,
• Luke Eaton,
• Dan O’Connell,
• Scott Monaghan,
• Shane Garvey,
• James Connolly,
• Chris Hatem,
• Justin D. Holmes and
• Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

• excess of 1 × 1019 cm−3 with minimal impact on surface quality. Hall effect data proved that reducing SOI dimensions from 66 to 13 nm lead to an increase in carrier concentration values due to the reduced volume available to the dopant for diffusion. Dopant trapping was found at both Si–SiO2 interfaces

A scanning probe microscopy study of nanostructured TiO₂/poly(3-hexylthiophene) hybrid heterojunctions for photovoltaic applications

• Laurie Letertre,
• Roland Roche,
• Olivier Douhéret,
• Hailu G. Kassa,
• Denis Mariolle,
• Nicolas Chevalier,
• Łukasz Borowik,
• Philippe Dumas,
• Benjamin Grévin,
• Roberto Lazzaroni and
• Philippe Leclère

Beilstein J. Nanotechnol. 2018, 9, 2087–2096, doi:10.3762/bjnano.9.197

• variations provide relative but quantitative variations of surface potential at the investigated interfaces. The PC-AFM measurements were carried out in air, using a Bruker Dimension Icon microscope with a Nanoscope V controller. An extended TUNA external module was used for current detection with a

The structural and chemical basis of temporary adhesion in the sea star Asterina gibbosa

• Birgit Lengerer,
• Marie Bonneel,
• Mathilde Lefevre,
• Elise Hennebert,
• Philippe Leclère,
• Emmanuel Gosselin,
• Peter Ladurner and
• Patrick Flammang

Beilstein J. Nanotechnol. 2018, 9, 2071–2086, doi:10.3762/bjnano.9.196

• Interfaces (LPSI), University of Mons, 23 Place du Parc, 7000 Mons, Belgium Institute of Zoology and Center of Molecular Bioscience Innsbruck, University of Innsbruck, Technikerstr. 25, A-6020 Innsbruck, Austria 10.3762/bjnano.9.196 Abstract Background: Marine biological adhesives are a promising source of

Recent highlights in nanoscale and mesoscale friction

• Andrea Vanossi,
• Dirk Dietzel,
• Andre Schirmeisen,
• Ernst Meyer,
• Rémy Pawlak,
• Thilo Glatzel,
• Marcin Kisiel,
• Shigeki Kawai and
• Nicola Manini

Beilstein J. Nanotechnol. 2018, 9, 1995–2014, doi:10.3762/bjnano.9.190

• -scale friction and mechanical control of specific single-asperity combinations, e.g., nanoclusters on layered materials, then scaling up to the meso/microscale of extended, occasionally lubricated, interfaces and driven trapped optical systems, and eventually up to the macroscale. Currently, this “hot

• the most fundamental building blocks of friction, as pointed out in well-established interface models, where interfaces are considered as a complex system of single-asperity contacts [13][14]. Consequently, FFM has received tremendous attention since its invention 30 years ago. To date an ever growing

• becomes crucial for the intriguing concept of structural lubricity, where collective force cancellation effects can result in ultra-low friction for incommensurate interfaces [39][40][41]. Note that “superlubricity” and “structural lubricity” are often used synonymous throughout the literature, although

Defect formation in multiwalled carbon nanotubes under low-energy He and Ne ion irradiation

• Santhana Eswara,
• Jean-Nicolas Audinot,
• Brahime El Adib,
• Maël Guennou,
• Tom Wirtz and
• Patrick Philipp

Beilstein J. Nanotechnol. 2018, 9, 1951–1963, doi:10.3762/bjnano.9.186

• thickness influences the processes at the MWCNT–Au interfaces. The Raman spectrum for the fluence of 1017 ions/cm2 with He+ ions shows that there is a difference between a suspended MWCNT film and a film deposited on a gold substrate, the nanotubes on top of the gold grid experiencing much more damage than

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si_1−xGe_x and Si layers

• Richard Daubriac,
• Emmanuel Scheid,
• Hiba Rizk,
• Richard Monflier,
• Sylvain Joblot,
• Rémi Beneyton,
• Pablo Acosta Alba,
• Sébastien Kerdilès and
• Filadelfo Cristiano

Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

• the top Si/BOX interfaces in correspondence of the maximum slope of the oxygen signal. The position of the SiO2/Si interfaces determined in this way (1.2 nm and 1.6 nm below the surface for the DSA- and RTA-annealed wafers, respectively) are in perfect agreement with those found by STEM-EDX

• analysis method described in [13] and taking into account the exact location of the SiO2Si interfaces (as described above), we found that about 92% of the arsenic ions retained in the top Si layer are electrically active in the DSA-annealed wafer, with a maximum active concentration of ca. 1.4 × 1020 cm−3

The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability

• Hichem Ferhati,
• Fayçal Djeffal and
• Toufik Bentrcia

Beilstein J. Nanotechnol. 2018, 9, 1856–1862, doi:10.3762/bjnano.9.177

• superior control of the channel conductivity through modulating the electric field at the heterojunction interfaces. In this regard, it is of great importance to illustrate the electric field distribution for a better understanding of the physical rules governing the obtained improvements of the

Quantitative comparison of wideband low-latency phase-locked loop circuit designs for high-speed frequency modulation atomic force microscopy

• Kazuki Miyata and
• Takeshi Fukuma

Beilstein J. Nanotechnol. 2018, 9, 1844–1855, doi:10.3762/bjnano.9.176

• imaging of calcite dissolution in water at 0.5 s/frame with true atomic resolution. The high-speed and high-resolution imaging capabilities of the proposed design will enable a wide range of studies to be conducted on various atomic-scale dynamic phenomena at solid–liquid interfaces. Keywords: calcite

• subnanometer-scale imaging of biomolecules [15][16][17]. Moreover, three-dimensional (3D) imaging techniques have been developed based on FM-AFM and used to visualize 3D distributions of hydration structures as well as flexible surface structures at solid–liquid interfaces [18][19][20][21][22]. Although FM-AFM

Tunable fractional Fourier transform implementation of electronic wave functions in atomically thin materials

• Daniela Dragoman

Beilstein J. Nanotechnol. 2018, 9, 1828–1833, doi:10.3762/bjnano.9.174

• geometries have been fabricated on flexible substrates for the purpose of acting as brain–computer interfaces [21], while single nanoscale nonplanar electrodes with complex topographies have been obtained using advanced stencil lithography [22]. Because γ > 0, the configuration illustrated in Figure 1a

Direct AFM-based nanoscale mapping and tomography of open-circuit voltages for photovoltaics

• Katherine Atamanuk,
• Justin Luria and
• Bryan D. Huey

Beilstein J. Nanotechnol. 2018, 9, 1802–1808, doi:10.3762/bjnano.9.171

• measured properties, for example with work function differences of molecular perovskites observed at specific facets [24] or grain boundary interfaces [2]. Topography commonly couples with conductive or photoconductive AFM contrast as well. Routines to test for such associations are therefore increasingly

• nanometers of crossing a boundary between three-dimensionally adjacent microstructural features. Some grain boundaries as well as sub-granular planar features appear to reveal relatively poor values of VOC*, supporting prior observations that many interfaces in CdTe may serve as conduits for photoelectrons

Increasing the performance of a superconducting spin valve using a Heusler alloy

• Andrey A. Kamashev,
• Aidar A. Validov,
• Joachim Schumann,
• Vladislav Kataev,
• Bernd Büchner,
• Yakov V. Fominov and
• Ilgiz A. Garifullin

Beilstein J. Nanotechnol. 2018, 9, 1764–1769, doi:10.3762/bjnano.9.167

• ). Accurate theoretical description of ferromagnets with large exchange splitting requires taking into account different densities of states in different spin subbands and modified boundary conditions at SF interfaces [36][37]. At the same time, the major inconsistency between theory and experiment in our

Nanoscale electrochemical response of lithium-ion cathodes: a combined study using C-AFM and SIMS

• Jonathan Op de Beeck,
• Nouha Labyedh,
• Alfonso Sepúlveda,
• Valentina Spampinato,
• Alexis Franquet,
• Thierry Conard,
• Philippe M. Vereecken,
• Wilfried Vandervorst and
• Umberto Celano

Beilstein J. Nanotechnol. 2018, 9, 1623–1628, doi:10.3762/bjnano.9.154

• processes in the thin films, at their interfaces and the combined electronic–ionic transport. It goes without saying that in sub-micrometer films thickness, the nanoionic properties of the system become more dominant and, similarly, the interfaces between layers represent a higher (compared to bulk) volume

• fraction in the final cell. This represents a criticality for virtually all battery technologies. However, as we focus on ASB technology the solid–solid interaction creates new challenges due to the different nature of the established interfaces. Uncontrolled side reactions and phase decomposition between

• of a potential ion-modulated C-AFM measurement. This can be particularly useful for fundamental studies on the role of materials, grain boundaries and interfaces that provide a low bias induced response. It is important to consider the formation of a thin local oxidized interface at the tip–sample

Correlative electrochemical strain and scanning electron microscopy for local characterization of the solid state electrolyte Li_1.3Al_0.3Ti_1.7(PO₄)₃

• Nino Schön,
• Deniz Cihan Gunduz,
• Shicheng Yu,
• Hermann Tempel,
• Roland Schierholz and
• Florian Hausen

Beilstein J. Nanotechnol. 2018, 9, 1564–1572, doi:10.3762/bjnano.9.148

• surface features as observed by SEM, providing evidence that both methods can be applied complementary. The same pores as those observed via SEM can be found in the AFM topography image and the topography reveals some preferential etching at the grain boundaries and interfaces. Differentiation between the