Controllable physicochemical properties of WO_x thin films grown under glancing angle

• Rupam Mandal,
• Aparajita Mandal,
• Alapan Dutta,
• Rengasamy Sivakumar,
• Sanjeev Kumar Srivastava and
• Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

• thin films were deposited on ultrasonically cleaned p-Si (100) and soda lime glass substrates of 1 × 1 cm2 dimension using a rf magnetron sputtering setup (Excel Instruments). Trichloroethylene, propanol, acetone, and DI water were used to carry out ultrasonication of the substrates for removing

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS₂ thin films with domains much smaller than the laser spot size

• Felipe Wasem Klein,
• Jean-Roch Huntzinger,
• Vincent Astié,
• Damien Voiry,
• Romain Parret,
• Houssine Makhlouf,
• Sandrine Juillaguet,
• Jean-Manuel Decams,
• Sylvie Contreras,
• Périne Landois,
• Ahmed-Azmi Zahab,
• Jean-Louis Sauvajol and
• Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

• range of A and B excitons [35]. All Raman spectra reported in this paper were recorded on different samples deposited on SiO2/Si(100) substrate. Hence, the second parameter essential to define is the SiO2 thickness. Indeed, the multiple reflection interferences that occur in the air/MoS2/SiO2/Si

• reference, which is a bare Si(111) wafer with only native oxide. In the following, A(Si111) stands for the integrated intensity of the Si(111) 521 cm−1 mode. This reference is preferred to the Si(100) substrate with 90 ± 6 nm SiO2 to avoid the effects of the SiO2 thickness variations and crystal orientation

• . For comparison with other setups or references, the polarization ratio of our setup and the relative values measured on Si(100) with native oxide and 90 nm SiO2 are given in Supporting Information File 1. As noted by several authors and predicted by the optical interference model, the normalized

Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone

• Kristjan Kalam,
• Peeter Ritslaid,
• Tanel Käämbre,
• Aile Tamm and
• Kaupo Kukli

Beilstein J. Nanotechnol. 2023, 14, 1085–1092, doi:10.3762/bjnano.14.89

• Kristjan Kalam Peeter Ritslaid Tanel Kaambre Aile Tamm Kaupo Kukli Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia 10.3762/bjnano.14.89 Abstract Polycrystalline SnO2 thin films were grown by atomic layer deposition (ALD) on SiO2/Si(100) substrates from SnI4 and O3

• , the cycle times for SnO2 were kept at 5-2-5-5 s, respectively, for the following sequence: metal precursor pulse, N2 purge pulse, O3 pulse, and N2 purge pulse. The films were grown on Si(100) cleansed and etched prior to the growth. An X-ray fluorescence spectrometer Rigaku ZSX 400 with the program

Silver-based SERS substrates fabricated using a 3D printed microfluidic device

• Phommachith Sonexai,
• Minh Van Nguyen,
• Bui The Huy and
• Yong-Ill Lee

Beilstein J. Nanotechnol. 2023, 14, 793–803, doi:10.3762/bjnano.14.65

• centrifuged at 12,000 rpm for 5 min to separate the Ag NPs solution and remove the oil phase. Finally, the Ag NPs suspension was stored in a dark vial at room temperature for further experiments. Fabrication of porous silicon (PS) substrate A p-type Si(100) wafer with a resistivity of 0.01–0.09 Ω·cm was used

High–low Kelvin probe force spectroscopy for measuring the interface state density

• Ryo Izumi,
• Masato Miyazaki,
• Yan Jun Li and
• Yasuhiro Sugawara

Beilstein J. Nanotechnol. 2023, 14, 175–189, doi:10.3762/bjnano.14.18

• metal-oxide semiconductor capacitors on Si(100) substrates, the lifetimes τn and τp as functions of the sum of the surface potential and the Fermi potential with respect to the midgap have been experimentally investigated [24]. As a result, for Si semiconductors with a low carrier density (small Fermi

Enhanced electronic transport properties of Te roll-like nanostructures

• E. R. Viana,
• N. Cifuentes and
• J. C. González

Beilstein J. Nanotechnol. 2022, 13, 1284–1291, doi:10.3762/bjnano.13.106

• writing optical lithography on 1 × 1 cm2 degenerate Si(100) substrates covered by a 300 nm thick high-quality SiO2 layer. A Cr(10 nm)/Au(100 nm) bilayer was thermally evaporated on the sample to produce good ohmic contacts (see Supporting Information File 1). This procedure follows the methodology

Role of titanium and organic precursors in molecular layer deposition of “titanicone” hybrid materials

• Arbresha Muriqi and
• Michael Nolan

Beilstein J. Nanotechnol. 2022, 13, 1240–1255, doi:10.3762/bjnano.13.103

• and GL to deposit titanicone films [33]. In ref [30] titanicone films were deposited using TiCl4 as metal source and EG or GL as organic precursors. TiCl4–EG films and TiCl4–GL films were deposited on Si(100) wafers. XRR analysis found a growth per cycle (GPC) of ≈4.6 Å/cycle for TiCl4–EG films at 90

• SiO2 membrane [27] and ≈4.6 Å/cycle at 90 °C in Si(100) wafers [30]. We note the relatively low temperature of the titanicone deposition in refs. [27][30] which may prevent the double reaction with EG. For the TiCl3–GL model, the distance between Ti and O in the Ti–O–CH2CH2OHCH2–O fragment (GL in the

Influence of water contamination on the sputtering of silicon with low-energy argon ions investigated by molecular dynamics simulations

• Grégoire R. N. Defoort-Levkov,
• Alan Bahm and
• Patrick Philipp

Beilstein J. Nanotechnol. 2022, 13, 986–1003, doi:10.3762/bjnano.13.86

• using the Stillinger–Weber potential to obtain the dimers formed on the Si(100) surface [21][54], with a time step of 0.1 fs for 1 ns. Some snapshots of the dimers on the surface can be found in the Figure 2. The equilibration was pursued with the ReaxFF potential for another 500 ps in the same

• the NVE ensemble in order to avoid any impact of a thermostat on the collision cascade. Once properly equilibrated, the simulation of argon bombardment of pristine Si(100) was run for 50 ps, which was enough for the modelling of energy dissipation and sputtering, and then thermalized to 300 K. The

• normal. These angles were selected to cover a good sample in the 0–85° range, including angles of specific interest, such as 72° and 83° which represent a channelling angle for Si(100) [56] and a grazing incidence angle, respectively, frequently used in TEM lamellae preparation [57]. A visualization of a

Influence of magnetic domain walls on all-optical magnetic toggle switching in a ferrimagnetic GdFe film

• Rahil Hosseinifar,
• Evangelos Golias,
• Ivar Kumberg,
• Quentin Guillet,
• Karl Frischmuth,
• Sangeeta Thakur,
• Mario Fix,
• Manfred Albrecht,
• Florian Kronast and
• Wolfgang Kuch

Beilstein J. Nanotechnol. 2022, 13, 74–81, doi:10.3762/bjnano.13.5

• thickness, deposited at room temperature using magnetron sputtering (base pressure <10−8 mbar) from elemental targets. The Ar sputter pressure was kept constant at 3.5 × 10−3 mbar during the deposition process. The film was prepared with 5 nm Pt as a seed layer on a Si(100) substrate with a 100 nm thick

• (100 nm)/Si(100). Magnetic properties were characterized by superconducting quantum interference device vibrating sample magnetometry, which confirmed an out-of-plane easy axis of magnetization with rectangular hysteresis loops and a coercivity of about 5 mT at room temperature, see Supporting

Morphology-driven gas sensing by fabricated fractals: A review

• Vishal Kamathe and
• Rupali Nagar

Beilstein J. Nanotechnol. 2021, 12, 1187–1208, doi:10.3762/bjnano.12.88

• study, Kante et al. prepared SnO2 films with fractal morphology by an electrochemical method with a subsequent oxidation process [68]. Both groups tested the films for CO gas sensing at different temperatures. Figure 8a–d shows the SEM images of SnO2 thin films on a Si(100) substrate obtained by Chen

• Elsevier. This content is not subject to CC BY 4.0. Density and dimension of SnO2 fractal films. (a–d) SEM images and (e) CO gas sensing behavior of SnO2 thin films prepared on Si(100) substrate at different temperatures (A: 300 °C, B: 350 °C, C: 400 °C, D: 450 °C). (f, g) Influence of the temperature on D

A Au/CuNiCoS₄/p-Si photodiode: electrical and morphological characterization

• Adem Koçyiğit,
• Adem Sarılmaz,
• Teoman Öztürk,
• Faruk Ozel and
• Murat Yıldırım

Beilstein J. Nanotechnol. 2021, 12, 984–994, doi:10.3762/bjnano.12.74

• the Al/CuNiCoS4/p-Si device A p-type Si(100) wafer was used as substrate and as semiconductor material for the Au/CuNiCoS4/p-Si photodiode. First, the wafer was cut to 2 cm2 pieces, and acetone and propanol were used to clean the pieces in an ultrasonic cleaner. Then, the pieces were immersed in HF

The role of convolutional neural networks in scanning probe microscopy: a review

• Ido Azuri,
• Irit Rosenhek-Goldian,
• Neta Regev-Rudzki,
• Georg Fantner and
• Sidney R. Cohen

Beilstein J. Nanotechnol. 2021, 12, 878–901, doi:10.3762/bjnano.12.66

Atomic layer deposited films of Al₂O₃ on fluorine-doped tin oxide electrodes: stability and barrier properties

• Hana Krýsová,
• Michael Neumann-Spallart,
• Hana Tarábková,
• Pavel Janda,
• Ladislav Kavan and
• Josef Krýsa

Beilstein J. Nanotechnol. 2021, 12, 24–34, doi:10.3762/bjnano.12.2

• , and water and dried in a stream of argon. Si(100) wafers with a 300 nm thick thermal oxide layer (Silicon Quest International, USA) were treated successively with acetone/ethanol/water. Al2O3 films were grown by using an ALD system R200 (Picosun, Finland) in the thermal mode with varying numbers of

Adsorption and self-assembly of porphyrins on ultrathin CoO films on Ir(100)

• Feifei Xiang,
• Tobias Schmitt,
• Marco Raschmann and
• M. Alexander Schneider

Beilstein J. Nanotechnol. 2020, 11, 1516–1524, doi:10.3762/bjnano.11.134

• perpendicular to the surface has previously been observed for variety of molecules [37][38][39]. Many metal phthalocyanines have been shown to rotate on metal surfaces [40][41][42][43], but notably also a modified Co phthalocyanine on Si(100) [44]. Molecules sometimes come close enough to each other or can be

Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir

• Mathias Franz,
• Romy Junghans,
• Paul Schmitt,
• Adriana Szeghalmi and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2020, 11, 1439–1449, doi:10.3762/bjnano.11.128

• wafer-level preparation, the iridium film was deposited by atomic layer deposition on rectangular Si(100) samples, using Ir(acac)3 and oxygen. Details are described by Genevée et al. [31]. The process was carried out with 45 and 90 cycles. One ALD cycle consists of pulsing Ir(acac)3 for 6 s, followed by

Atomic defect classification of the H–Si(100) surface through multi-mode scanning probe microscopy

• Jeremiah Croshaw,
• Thomas Dienel,
• Taleana Huff and
• Robert Wolkow

Beilstein J. Nanotechnol. 2020, 11, 1346–1360, doi:10.3762/bjnano.11.119

• available via a single imaging mode. We demonstrate this through the characterization and classification of several commonly found defects of the hydrogen-terminated silicon (100)-2 × 1 surface (H–Si(100)-2 × 1) by using six unique imaging modes. The H–Si surface was chosen as it provides a promising

• dimers are formed, which run parallel along the surface. The study of Si(100) surface defects was one of the first applications of scanning probe microscopy [14]. The three observed species were identified as a missing silicon dimer, a pair of missing silicon dimers, and a missing pair of Si atoms on the

• electronic and structural behaviour of the Si(100) surface [18]. The addition of hydrogen to surface silicon atoms saturates all available bonds [19] and three surface reconstructions are commonly observed. The 2 × 1 phase – frequently used in hydrogen lithography, and can be prepared in situ resulting in

Highly sensitive detection of estradiol by a SERS sensor based on TiO₂ covered with gold nanoparticles

• Andrea Brognara,
• Ili F. Mohamad Ali Nasri,
• Beatrice R. Bricchi,
• Andrea Li Bassi,
• Caroline Gauchotte-Lindsay,
• Matteo Ghidelli and
• Nathalie Lidgi-Guigui

Beilstein J. Nanotechnol. 2020, 11, 1026–1035, doi:10.3762/bjnano.11.87

• Si(100) and soda-lime glass substrates, which were mounted on a sample holder at a fixed target-to-substrate distance of 5 cm. Changing the background pressure within the deposition chamber allowed for a tuning of the film morphology (i.e., a higher pressure resulted in a higher film porosity) [28

• perform morphological characterizations of the films deposited on Si(100) substrates. The average size distribution of Au NPs was estimated through statistical analysis of top-view SEM images with the open source software ImageJ®. Since the shape of the Au NPs was not always perfectly circular, their area

• the composite TiO2/Au 6 nm sensor with that of a bare Si(100) substrate on which the same equivalent thickness of Au (6 nm) was evaporated and annealed at 500 °C for 2 h. Figure 6 shows a clearly larger enhancement for both MBA peaks on the TiO2/Au sensor. The resulting EF is about one order of

Structural optical and electrical properties of a transparent conductive ITO/Al–Ag/ITO multilayer contact

• Aliyu Kabiru Isiyaku,
• Ahmad Hadi Ali and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2020, 11, 695–702, doi:10.3762/bjnano.11.57

• deposition of ITO films. Aluminium (Al) and silver (Ag) targets of 99.999% purity were purchased and used for the deposition of the Al–Ag interlayer between top and bottom ITO layers. Silicon wafers [Si(100), n-type, phosphorous, 1–10 Ω·cm and 525 ± 25 μm] or commercial soda-lime glass (for optical

Electromigration-induced directional steps towards the formation of single atomic Ag contacts

• Atasi Chatterjee,
• Christoph Tegenkamp and
• Herbert Pfnür

Beilstein J. Nanotechnol. 2020, 11, 680–687, doi:10.3762/bjnano.11.55

• detail previously. Contrary to most EM experiments with thin metallic films on insulating substrates, the Ag/Si(100) system is unique in the sense that the first Ag layer wets the hydrogen-terminated Si(100) surface [25]. This improves the thermal contact so that thermally assisted processes during EM

• histogram of Figure 4 exhibits finer peak spacings in comparison to Figure 2, which gives a different weight to the overtones between 1.5 and 3 in Figure 5. Conclusion The EM process in ultrathin nanocrystalline Ag structures on Si(100) was investigated for structures that had a narrowest constriction of

• ultrathin Ag films. Experimental Low-doped Si(100) substrates (1000 Ω·cm at 300 K), which are good insulators at temperatures around 100 K, were used. Structuring was carried out by a three-step process. As a first step, we patterned the contact pads by photolithography. Secondly, electron beam lithography

Formation of nanoripples on ZnO flat substrates and nanorods by gas cluster ion bombardment

• Xiaomei Zeng,
• Vasiliy Pelenovich,
• Bin Xing,
• Rakhim Rakhimov,
• Wenbin Zuo,
• Alexander Tolstogouzov,
• Chuansheng Liu,
• Dejun Fu and
• Xiangheng Xiao

Beilstein J. Nanotechnol. 2020, 11, 383–390, doi:10.3762/bjnano.11.29

• discussed. The results obtained in this study are of interest in the application of ZnO nanostructures for, e.g., gas sensing, solar cells, or field emitters, where controlled surface morphologies are required. Experimental We have grown ZnO nanorods on Si(100) substrates (HF-Kejing Materials Technology Co

Growth dynamics and light scattering of gold nanoparticles in situ synthesized at high concentration in thin polymer films

• Corentin Guyot,
• Philippe Vandestrick,
• Ingrid Marenne,
• Olivier Deparis and
• Michel Voué

Beilstein J. Nanotechnol. 2019, 10, 1768–1777, doi:10.3762/bjnano.10.172

• + cations was spin-coated using a Laurell WS-650-23B coater on RCA-cleaned Si(100) wafers fragments (2000 rpm, 90 s). Based on an average volume mass for PVA of 1.26 g/cm3, the 2% gold-to-PVA mass ratio corresponds to a volume fraction of fAu = 0.13% in the dry film. Optical scattering measurements Optical

CuInSe₂ quantum dots grown by molecular beam epitaxy on amorphous SiO₂ surfaces

• Henrique Limborço,
• Pedro M.P. Salomé,
• Rodrigo Ribeiro-Andrade,
• Jennifer P. Teixeira,
• Nicoleta Nicoara,
• Kamal Abderrafi,
• Joaquim P. Leitão,
• Juan C. Gonzalez and
• Sascha Sadewasser

Beilstein J. Nanotechnol. 2019, 10, 1103–1111, doi:10.3762/bjnano.10.110

• preparation The samples presented in this work were grown in a molecular beam epitaxy system (Omicron EVO 50) by evaporating high-purity solid precursors. Nanodots were grown on Si(100) with an approximately 1.6 nm thick layer of native SiO2. The substrates were outgassed at 600 °C for 10 min before the

• typically produces films with a thickness of 50–70 nm. Results and Discussion We prepared three samples grown on Si(100) substrates with a ca. 1.6 nm layer of native SiO2 using exactly the same evaporation fluxes but at different substrate growth temperatures (TG) of 490, 530, and 580 °C. Figure 1 shows

On the transformation of “zincone”-like into porous ZnO thin films from sub-saturated plasma enhanced atomic layer deposition

• Alberto Perrotta,
• Julian Pilz,
• Stefan Pachmajer,
• Antonella Milella and
• Anna Maria Coclite

Beilstein J. Nanotechnol. 2019, 10, 746–759, doi:10.3762/bjnano.10.74

• , process windows for the formation of highly porous materials are presented. Similar studies are missing for Zn-based materials. Experimental A custom-built direct plasma ALD reactor was used to deposit the zincone-like thin films on one-side polished c-Si (100) substrates (Siegert Wafer). The reactor was

Ultrathin hydrophobic films based on the metal organic framework UiO-66-COOH(Zr)

• Miguel A. Andrés,
• Clemence Sicard,
• Christian Serre,
• Olivier Roubeau and
• Ignacio Gascón

Beilstein J. Nanotechnol. 2019, 10, 654–665, doi:10.3762/bjnano.10.65

• OPD/MOF ultrathin films have been fabricated onto glass, calcium fluoride, quartz crystal microbalance (QCM), Si(100) substrates and mica and characterized using scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), atomic force microscopy (AFM

• of the MOF, grazing incidence X-ray diffraction (GIXRD) studies were performed both on LB and drop-cast samples deposited onto Si(100) substrates (Figure 4 and Supporting Information File 1, Figure S7). The GIXRD patterns of LB samples confirm the main peaks of UiO-66-COOH(Zr), at 7.4°, 8.5°, 12.1

• deposited onto Si(100) wafers was done using a high-resolution Empyrean diffractometer (PANalytical) operating at 45 kV (generator voltage) and a tube current of 40 mA (Cu Kα radiation). A Pixcell 1D medipix3 detector operating in the open detector mode was used. An optimization of the grazing incidence

Biocompatible organic–inorganic hybrid materials based on nucleobases and titanium developed by molecular layer deposition

• Leva Momtazi,
• Henrik H. Sønsteby and
• Ola Nilsen

Beilstein J. Nanotechnol. 2019, 10, 399–411, doi:10.3762/bjnano.10.39

• density of the systems were measured after 15 minutes of water treatment (Table 3), indicating some variations in index of refraction, but relatively small variations in film density between the different systems. The surface topography of films as-deposited on Si(100) and after being immersed in water

• precleaned single crystal substrates cut from Si(100) wafers. The growth dynamics were investigated in situ by a quartz crystal microbalance (QCM) using a Maxtek TM400 unit and homemade crystal holders. A change in resonance frequency of the crystal is linearly proportional to the mass of the deposited film

• purging system. An uncoated Si(100) substrate was used to collect the background. Atomic force microscopy (AFM) measurements were performed in contact mode using a Park XE70 device. The data were analyzed using the Gwyddion 2.44 SPM visualization tool. The contact angle measurements were performed using a