Nanoscale optical and structural characterisation of silk

• Meguya Ryu,
• Reo Honda,
• Adrian Cernescu,
• Arturas Vailionis,
• Armandas Balčytis,
• Jitraporn Vongsvivut,
• Jing-Liang Li,
• Denver P. Linklater,
• Elena P. Ivanova,
• Vygantas Mizeikis,
• Mark J. Tobin,
• Junko Morikawa and
• Saulius Juodkazis

Beilstein J. Nanotechnol. 2019, 10, 922–929, doi:10.3762/bjnano.10.93

• all three dimensions, which is of rapidly growing interest in the field of nanotechnology. Electronic chip manufacturing is currently introducing the sub-10 nm fabrication node (a half pitch of a grating pattern) in the development of 3D fin-gates of field-effect transistors. Nanofabrication

A carrier velocity model for electrical detection of gas molecules

• Ali Hosseingholi Pourasl,
• Sharifah Hafizah Syed Ariffin,
• Mohammad Taghi Ahmadi,
• Razali Ismail and
• Niayesh Gharaei

Beilstein J. Nanotechnol. 2019, 10, 644–653, doi:10.3762/bjnano.10.64

• electrical, physical, and chemical properties of graphene nanoribbons (GNRs) make them very interesting for use in the future generation of the electronic devices, such as field effect transistors (FETs), diodes, capacitors, memories, and sensors [1][2]. Compared to its counterparts, such as silicon

Nanocomposite–parylene C thin films with high dielectric constant and low losses for future organic electronic devices

• Marwa Mokni,
• Gianluigi Maggioni,
• Abdelkader Kahouli,
• Sara M. Carturan,
• Walter Raniero and
• Alain Sylvestre

Beilstein J. Nanotechnol. 2019, 10, 428–441, doi:10.3762/bjnano.10.42

• with 3.8% Ag content. This study provides guidance for future NCPC materials for insulating gates in organic field-effect transistors (OFETs) and advanced electronic applications. Keywords: dielectric; nanocomposite polymer; organic field-effect transistor; parylene C; silver-containing nanoparticle

• organic field-effect transistors (OFETs) [11], organic light-emitting diodes (OLEDs) [12][13], and flexible organic electronic devices (FEDs) [14][15]. It presents an easy deposition process at low temperatures with a conformal and uniform layer [16]. Parylene C is a well-controlled material when used as

Contactless photomagnetoelectric investigations of 2D semiconductors

• Marian Nowak,
• Marcin Jesionek,
• Barbara Solecka,
• Piotr Szperlich,
• Piotr Duka and
• Anna Starczewska

Beilstein J. Nanotechnol. 2018, 9, 2741–2749, doi:10.3762/bjnano.9.256

• ] (ε0ε/we)Vg, where ε0 and ε are the permittivity of free space and the used dielectric, respectively; e is the electron charge; and w is the thickness of the dielectric. The authors of [35] provided the theoretical description of the current compact model of graphene field-effect transistors. In our

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO₂/Si₃N₄-coating

• Dirk König,
• Daniel Hiller,
• Noël Wilck,
• Birger Berghoff,
• Merlin Müller,
• Sangeeta Thakur,
• Giovanni Di Santo,
• Luca Petaccia,
• Joachim Mayer,
• Sean Smith and
• Joachim Knoch

Beilstein J. Nanotechnol. 2018, 9, 2255–2264, doi:10.3762/bjnano.9.210

• ) currently used in ultralarge scale integration (ULSI) faces serious miniaturization challenges below the 14 nm technology node such as dopant out-diffusion and inactivation by clustering in Si-based field-effect transistors (FETs). Moreover, self-purification and massively increased ionization energy cause

• electron microscopy (TEM) and the measurement of the highest occupied DOS over energy for Si-NWell samples embedded in SiO2 or Si3N4 by synchrotron-based long-term UPS. With this experimental confirmation of our h-DFT results, we present the concept of undoped Si-NWire field-effect transistors (FETs). We

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

• Noel Kennedy,
• Ray Duffy,
• Luke Eaton,
• Dan O’Connell,
• Scott Monaghan,
• Shane Garvey,
• James Connolly,
• Chris Hatem,
• Justin D. Holmes and
• Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

• being deemed detrimental to current and future device production. Semiconductor substrates require doping to reduce their resistivity and enable their use in electronic devices such as metal-oxide semiconductor field-effect transistors (MOSFETs). Traditionally, ex situ doping was carried out using ion

Nonlinear effect of carrier drift on the performance of an n-type ZnO nanowire nanogenerator by coupling piezoelectric effect and semiconduction

• Yuxing Liang,
• Shuaiqi Fan,
• Xuedong Chen and
• Yuantai Hu

Beilstein J. Nanotechnol. 2018, 9, 1917–1925, doi:10.3762/bjnano.9.183

• piezoelectric semiconductors can be used to develop many new microelectronic devices with modern functions, for example piezoelectric field-effect transistors [6][7][8][9][10][11], piezoelectric charge-coupled devices [12][13][14][15], piezoelectric chemical sensors [16][17], and nanogenerators made of

The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability

• Hichem Ferhati,
• Fayçal Djeffal and
• Toufik Bentrcia

Beilstein J. Nanotechnol. 2018, 9, 1856–1862, doi:10.3762/bjnano.9.177

• transistors (MOSFETs) and their complements in nanoelectronic circuit designs [1][2][3][4]. In this context, small swing-switch devices such as double-gate tunneling field-effect transistors (DG TFETs) are gaining attention because of their good subthreshold characteristics, high scalability and low OFF

• -effect transistor (JL TFET); nanoscale; SiGe; Introduction In the last years, the continuous miniaturization of nanoscale transistors induces new challenges including short-channel effects (SCEs) and high power consumption, which prevent incorporating conventional metal-oxide semiconductor field-effect

Know your full potential: Quantitative Kelvin probe force microscopy on nanoscale electrical devices

• Amelie Axt,
• Ilka M. Hermes,
• Victor W. Bergmann,
• Niklas Tausendpfund and
• Stefan A. L. Weber

Beilstein J. Nanotechnol. 2018, 9, 1809–1819, doi:10.3762/bjnano.9.172

• electode stripes. This arrangement mimics both the stray field and the potential distribution of flat electronic devices like field effect transistors. Every second electrode on the interdigitated array was grounded (Figure 3) = 0 V, while on the other electrodes the external potential was varied from −3

Free-radical gases on two-dimensional transition-metal disulfides (XS₂, X = Mo/W): robust half-metallicity for efficient nitrogen oxide sensors

• Chunmei Zhang,
• Yalong Jiao,
• Fengxian Ma,
• Sri Kasi Matta,
• Steven Bottle and
• Aijun Du

Beilstein J. Nanotechnol. 2018, 9, 1641–1646, doi:10.3762/bjnano.9.156

• meV and 3 Å, suggesting that water is physically adsorbed on the surface of the WS2 nanosheet. Monolayer MoS2 [38] and multilayer MoS2 field effect transistors [17] for sensing NO at room temperature have been fabricated experimentally. In this work, the ab initio molecular dynamics simulations at

Artifacts in time-resolved Kelvin probe force microscopy

• Sascha Sadewasser,
• Nicoleta Nicoara and
• Santiago D. Solares

Beilstein J. Nanotechnol. 2018, 9, 1272–1281, doi:10.3762/bjnano.9.119

• electrostatic force microscopy (EFM) on organic photovoltaic blends [14][15][16]. By applying a bias pulse to the atomic force microscopy (AFM) tip, Schirmeisen et al. studied the ion transport in solid electrolytes [17]. By applying bias pulses across organic field-effect transistors (OFETs) electronic

The role of ligands in coinage-metal nanoparticles for electronics

• Ioannis Kanelidis and
• Tobias Kraus

Beilstein J. Nanotechnol. 2017, 8, 2625–2639, doi:10.3762/bjnano.8.263

• rings [48], or patterned grids [49] have been fabricated as transparent conductive electrodes. Inks of metal nanoparticles are also good candidates to print electrodes for organic field-effect transistors [50]. Magdassi et al. demonstrated the inkject printing of silver nanowires (Ag NWs) onto plastic

• other solvents using amphiphilic alkylamines of different chain length to create organic dispersions of alkyl-stabilized nanoparticles [90]. Concentrated organic or aqueous dispersions enable particle printing using inkjet technologies, for example; exemplarily, field-effect transistors were inkjet

The interplay between spin densities and magnetic superexchange interactions: case studies of mono- and trinuclear bis(oxamato)-type complexes

• Azar Aliabadi,
• Bernd Büchner,
• Vladislav Kataev and
• Tobias Rüffer

Beilstein J. Nanotechnol. 2017, 8, 2245–2256, doi:10.3762/bjnano.8.224

• ] diamagnetic molecules [23] and even individual single-molecule magnets (SMMs) [24] were already successfully integrated, and spin-organic field-effect transistors [25] or spin-organic light-emitting diodes [26] were developed. Although it remains puzzling to understand the spin-polarized transport phenomena

Substrate and Mg doping effects in GaAs nanowires

• Perumal Kannappan,
• Nabiha Ben Sedrine,
• Jennifer P. Teixeira,
• Maria R. Soares,
• Bruno P. Falcão,
• Maria R. Correia,
• Nestor Cifuentes,
• Emilson R. Viana,
• Marcus V. B. Moreira,
• Geraldo M. Ribeiro,
• Alfredo G. de Oliveira,
• Juan C. González and
• Joaquim P. Leitão

Beilstein J. Nanotechnol. 2017, 8, 2126–2138, doi:10.3762/bjnano.8.212

• the less bound carrier in the radiative state from nanowires grown on GaAs(111)B; and v) a higher influence of defects on the activation of nonradiative de-excitation channels in the case of nanowires only grown on Si(111). Back-gate field effect transistors were fabricated with individual nanowires

• measurements showed a lower influence of the polytypic structure of the nanowires on their electronic structure. The involvement of Mg in one of the radiative transitions observed for growth on the Si(111) substrate is suggested. Keywords: electronic structure; field effect transistors; GaAs nanowires

• -gate field effect transistors (FETs) allowed the estimation of the free hole concentration and the electrical mobility. The photoluminescence (PL) measurements revealed a few radiative transitions. The PL dependence on the excitation power and temperature was performed. The non-radiative de-excitation

Electronic structure, transport, and collective effects in molecular layered systems

• Torsten Hahn,
• Tim Ludwig,
• Carsten Timm and
• Jens Kortus

Beilstein J. Nanotechnol. 2017, 8, 2094–2105, doi:10.3762/bjnano.8.209

• development of further devices. Examples were demonstrated for a wide variety of applications including molecular spin filters [1], single-molecule or thin-film-based field-effect transistors [2][3][4], as well as potential candidates for memory devices utilizing organometallic complexes of

(Metallo)porphyrins for potential materials science applications

• Lars Smykalla,
• Carola Mende,
• Michael Fronk,
• Pablo F. Siles,
• Michael Hietschold,
• Georgeta Salvan,
• Dietrich R. T. Zahn,
• Oliver G. Schmidt,
• Tobias Rüffer and
• Heinrich Lang

Beilstein J. Nanotechnol. 2017, 8, 1786–1800, doi:10.3762/bjnano.8.180

• alternatives for device approaches such as sensors or organic field-effect transistors (OFETs) [57]. The compatibility of (metallo)porphyrin compounds with deposition techniques of organic molecules presents a great potential for the implementation and scaling down of porphyrins into current device fabrication

Group-13 and group-15 doping of germanane

• Nicholas D. Cultrara,
• Maxx Q. Arguilla,
• Shishi Jiang,
• Chuanchuan Sun,
• Michael R. Scudder,
• R. Dominic Ross and
• Joshua E. Goldberger

Beilstein J. Nanotechnol. 2017, 8, 1642–1648, doi:10.3762/bjnano.8.164

• need of extrinsic dopants to access devices with lower resistivity. In previous studies, the resistivity of germanane was reduced through the incorporation of phosphorus only when activated in the presence of atmospheric water [29]. Recently [30], undoped germanane field-effect transistors were

Parylene C as a versatile dielectric material for organic field-effect transistors

• Tomasz Marszalek,
• Maciej Gazicki-Lipman and
• Jacek Ulanski

Beilstein J. Nanotechnol. 2017, 8, 1532–1545, doi:10.3762/bjnano.8.155

• for applications in flexible organic electronics, is presented. A synthesis and basic properties of Parylene C are described, followed by several examples of use of parylenes as substrates, dielectrics, insulators, or protecting materials in the construction of organic field-effect transistors

• organic field effect transistors is the work of Podzorov et al. describing rubrene single-crystal transistors with Parylene C used as the gate insulating material [2]. This configuration allowed the authors to fabricate OFET devices with high charge-carrier mobility and reproducible characteristics

Light-induced magnetoresistance in solution-processed planar hybrid devices measured under ambient conditions

• Sreetama Banerjee,
• Daniel Bülz,
• Danny Reuter,
• Karla Hiller,
• Dietrich R. T. Zahn and
• Georgeta Salvan

Beilstein J. Nanotechnol. 2017, 8, 1502–1507, doi:10.3762/bjnano.8.150

• -pentacene film. Keywords: HED-TIEs; hybrid electronic devices; organic field-effect transistors (OFETs); organic magnetoresistance; planar hybrid devices; TIPS-pentacene; Findings The field of molecular spintronics has received lot of research interest in the last years because of the possibility of

• devices, in which the active organic layer is sandwiched between two conductive metal layers [3][4][8]. Saragi et al. carried out studies on the magnetic field effect on three terminal bottom-contact organic field-effect transistors (OFET) and showed the existence of light-induced magnetoresistance in

Synthesis, spectroscopic characterization and thermogravimetric analysis of two series of substituted (metallo)tetraphenylporphyrins

• Rasha K. Al-Shewiki,
• Carola Mende,
• Roy Buschbeck,
• Pablo F. Siles,
• Oliver G. Schmidt,
• Tobias Rüffer and
• Heinrich Lang

Beilstein J. Nanotechnol. 2017, 8, 1191–1204, doi:10.3762/bjnano.8.121

• , which were based on tris(8-hydroxyquinolinato)aluminium (Alq3) sandwiched between La2/3Sr1/3MnO3 and cobalt electrodes, was reported more than a decade ago [5]. This finding motivated the development of further novel devices as, for example, spin-OFETs (organic field effect transistors) [4]. The nature

Ultrasmall magnetic field-effect and sign reversal in transistors based on donor/acceptor systems

• Thomas Reichert and
• Tobat P. I. Saragi

Beilstein J. Nanotechnol. 2017, 8, 1104–1114, doi:10.3762/bjnano.8.112

• , 40221 Düsseldorf, Germany 10.3762/bjnano.8.112 Abstract We present magnetoresistive organic field-effect transistors featuring ultrasmall magnetic field-effects as well as a sign reversal. The employed material systems are coevaporated thin films with different compositions consisting of the electron

• structure (two-terminal device). In contrast, our tool in organic spintronics are field-effect transistors (three-terminal device), which gain new insight into spin transport phenomena in organic π-conjugated materials. In field-effect transistors, the sign of charge carriers is defined by the gate voltage

Vapor deposition routes to conformal polymer thin films

• Priya Moni,
• Ahmed Al-Obeidi and
• Karen K. Gleason

Beilstein J. Nanotechnol. 2017, 8, 723–735, doi:10.3762/bjnano.8.76

• ) [42][50][51]. Figure 9f shows a conformal oCVD synthesized polythiophene coating on a NAA electrode. In soft electronics, conformal dielectric iCVD films have found uses in both field effect transistors and non-volatile memory [7][52]. Conclusion In summary, vapor based polymerization techniques, such

Copper atomic-scale transistors

• Fangqing Xie,
• Maryna N. Kavalenka,
• Moritz Röger,
• Daniel Albrecht,
• Hendrik Hölscher,
• Jürgen Leuthold and
• Thomas Schimmel

Beilstein J. Nanotechnol. 2017, 8, 530–538, doi:10.3762/bjnano.8.57

• V) of the three most promising approaches, namely multigate transistors, tunnel field-effect transistors, and germanium nanodevices [59][60][61][62]. The dynamic power dissipation of the CMOS devices is proportional to the square of drain supply voltage (VDD) [58]. The copper atomic-scale

• an electrolyte of copper sulfate and sulfuric acid in bi-distilled water. The operational potentials of the copper atomic-scale transistor are compatible with the operation voltages (ca. 0.5 V) of multigate transistors, tunnel field-effect transistors, and germanium nanodevices [59][60][61][62

Advances in the fabrication of graphene transistors on flexible substrates

• Gabriele Fisichella,
• Stella Lo Verso,
• Silvestra Di Marco,
• Vincenzo Vinciguerra,
• Emanuela Schilirò,
• Salvatore Di Franco,
• Raffaella Lo Nigro,
• Fabrizio Roccaforte,
• Amaia Zurutuza,
• Alba Centeno,
• Sebastiano Ravesi and
• Filippo Giannazzo

Beilstein J. Nanotechnol. 2017, 8, 467–474, doi:10.3762/bjnano.8.50

• properties upon deformation. More importantly, its field-effect tunable carrier density, high mobility and saturation velocity make it an appealing choice as a channel material for field-effect transistors (FETs) for several potential applications. As an example, properly designed and scaled graphene FETs

In-situ monitoring by Raman spectroscopy of the thermal doping of graphene and MoS₂ in O₂-controlled atmosphere

• Aurora Piazza,
• Filippo Giannazzo,
• Gianpiero Buscarino,
• Gabriele Fisichella,
• Antonino La Magna,
• Fabrizio Roccaforte,
• Marco Cannas,
• Franco Mario Gelardi and
• Simonpietro Agnello

Beilstein J. Nanotechnol. 2017, 8, 418–424, doi:10.3762/bjnano.8.44

• ] and chemical vapor deposition (CVD) on catalytic metals [9][10] followed by the poly(methyl methacrylate) (PMMA) assisted transfer [11][12], enlarged the interest and perspectives for applications. In particular in view of the realization of electronic devices and to obtain Gr-based field effect

• transistors, one demanding physical feature of Gr connected to the energy levels distribution is the removal of the zero energy gap between valence and conduction states to enable a more efficient current modulation in the devices on/off states [13]. Furthermore, the need to control the charge carrier density